CN113724758B - Multicore fiber memristor device and scheme of erasing, writing and reading - Google Patents
Multicore fiber memristor device and scheme of erasing, writing and reading Download PDFInfo
- Publication number
- CN113724758B CN113724758B CN202111021709.6A CN202111021709A CN113724758B CN 113724758 B CN113724758 B CN 113724758B CN 202111021709 A CN202111021709 A CN 202111021709A CN 113724758 B CN113724758 B CN 113724758B
- Authority
- CN
- China
- Prior art keywords
- optical fiber
- core
- optical
- fiber
- pulse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management
Landscapes
- Optical Communication System (AREA)
- Lasers (AREA)
Abstract
The invention provides a multi-core optical fiber memristor device and an erasing, writing and reading scheme. The multi-core optical fiber memristor comprises a read, write and erase laser output module, a multi-core optical fiber memristor and a read multi-core detection module, wherein the multi-core optical fiber memristor comprises a multi-core optical fiber, an optical phase change material film and an anti-oxidation reflection-increasing film. An optical phase change material film and an oxidation-resistant reflection-increasing film are sequentially plated on the end face of the multi-core optical fiber to construct the multi-core optical fiber memristor; the phase states of the optical phase change materials at the end faces of the fiber cores are respectively regulated and controlled by injecting erasing pulse laser and writing pulse laser into each fiber core, the reflectivity of the optical phase change materials in different phase states is different, and the storage state of each fiber core is read through reading continuous laser, so that multi-core nonvolatile all-optical storage is realized. The multi-core optical fiber memristor improves the dimension of single-core optical fiber nonvolatile storage based on the space division multiplexing concept, can greatly improve communication and storage capacity, and breaks through the limit of the information capacity of the current common single-mode optical fiber.
Description
Technical field:
the invention belongs to the technical field of optical information, and particularly relates to a multi-core optical fiber memristor device and an erasing, writing and reading scheme.
The background technology is as follows:
in recent years, with the development of space division multiplexing technology and the development of multi-core optical fiber sensing technology, multi-core optical fibers have become an important development direction of current optical fiber technology. The multi-core optical fiber has a plurality of independent fiber cores in a common cladding region, so that the transmission of space division multiplexing optical signals can be realized, the communication capacity is greatly improved, and the capacity limit of the current common single-mode optical fiber is broken. Currently, the field of multi-core optical fibers in communication (Xin-zhu, zhang Qi, yang Baoguo, tian Qinghua, zhang Zongyu, tian Feng, wang Yongjun, yang Leijing, midsummer, wang Xin, lv Kai, song Xiumin) is mature, a multi-core optical fiber communication system and a multi-core optical fiber communication method [ P ] Beijing city, CN109104244A,2018-12-28 ], sensing (Du, zhang Zhe, he Jun, wang Yiping), a multi-core optical fiber pressure sensor and a multi-core optical fiber pressure sensing system [ P ] are developed, guangdong province, CN209400111U,2019-09-17 ], and the multi-core optical fiber technology is required to be broken through, so that the development of new functions of the multi-core optical fibers is very significant.
The invention provides a multi-core optical fiber memristor and an erasing, writing and reading scheme, wherein an optical phase change material film and an oxidation-resistant reflection-increasing film are sequentially plated on the end face of the multi-core optical fiber to construct the multi-core optical fiber memristor; the phase states of the optical phase change materials at the end faces of the fiber cores are respectively regulated and controlled by injecting erasing pulse laser and writing pulse laser into each fiber core, the reflectivity of the optical phase change materials in different phase states is different, and the storage state of each fiber core is read through reading continuous laser, so that multi-core nonvolatile all-optical storage is realized.
The invention comprises the following steps:
the invention aims to provide a multi-core optical fiber memristor device and an erasing, writing and reading scheme, and the multi-space dimension nonvolatile storage is realized in a single fiber.
The multi-core optical fiber memristor comprises a read, write and erase laser output module (1, 2, 3, 4, 5, 6), a multi-core optical fiber memristor (7) and a read multi-core detection module (8, 9, 10, 11);
the reading, writing and erasing laser output module comprises a reading, writing and erasing continuous light laser (1), a light pulse generating module (2), a one-to-N optical fiber coupler (3), a one-to-two optical fiber coupler array (4), an optical fiber circulator array (5) and a multi-core optical fiber fanner (6);
the continuous optical laser (1) for reading, writing and erasing comprises seed source lasers (101-107) for erasing and writing and a continuous optical laser (108) for reading;
the seed source lasers (101-107) respectively output continuous lasers with different wavelengths to the optical pulse generating module (2);
the read continuous laser (108) outputs detection continuous laser, and the output wavelength is inconsistent with the wavelength of the erase and write seed source lasers (101-107);
the reading, writing and erasing continuous light laser (1) and the upper computer (11) interactively regulate and control parameters such as the wavelength, the intensity and the like of the output continuous laser;
the optical pulse generation module (2) comprises a dense wavelength division multiplexer.1 (201), an intensity modulator (202), an erbium-doped pulse optical fiber amplifier (203), a dense wavelength division multiplexer.2 (204) and an electric pulse generator (205);
the wavelength channels of the dense wavelength division multiplexer.1 (201) and the dense wavelength division multiplexer.2 (204) are matched with the seed source lasers (101-107) for erasing and writing;
the function of the dense wavelength division multiplexer.1 (201) is to combine continuous laser beams of different wavelength channels output by the seed source lasers (101-107) into a single fiber, and input the single fiber into an intensity modulator (202) for light intensity modulation;
the modulation pulse source of the intensity modulator (202) is provided by an electric pulse generator (205), the function of the modulation pulse source is to perform intensity modulation on an input optical signal, when the intensity modulator (202) is at a proper static working point, the electric pulse generator (205) sends out electric pulses, and the optical signal passing through the intensity modulator (202) receives the electric pulses for modulation, so that pulsed light is generated;
the erbium-doped pulse optical fiber amplifier (203) amplifies the optical pulse signal output by the intensity modulator (202) to realize high-power pulse optical signal output;
the dense wavelength division multiplexer 2 (205) receives the optical pulse signals of each wavelength output by the erbium-doped pulse optical fiber amplifier (203) and separates the wavelengths into respective wavelength channels;
the erbium-doped pulse optical fiber amplifier (203) and the electric pulse generator (204) are interacted with the upper computer (11) to realize the output of optical pulse signals with target intensity;
the one-to-N optical fiber coupler (3) equally divides the energy of the detection continuous laser emitted by the read continuous laser (108) and inputs the energy into the one-to-two optical fiber coupler array (4);
the one-to-two optical fiber coupler array (4) comprises a plurality of one-to-two optical fiber couplers (401-407), and is used for coupling the detection continuous laser equally divided by the one-to-N optical fiber coupler (3) with the optical pulse signals incident to the respective wavelength channels and inputting the optical pulse signals into the optical fiber circulator array (5);
the optical fiber circulator array (5) comprises a plurality of optical fiber circulators (501-507) which transmit the optical energy of the respective wavelength channels from the port 1 to the port 2 and transmit the optical energy reflected by the back-end device from the port 2 to the port 3;
the multi-core optical fiber fanner (6) couples the optical signals of the respective wavelength channels into corresponding cores of the multi-core optical fiber;
the multi-core fiber memristor (7) comprises a multi-core fiber (701), an optical phase change material film (702) and an oxidation-resistant reflection-increasing film (703);
the multi-core optical fiber (701) is provided with at least two fiber cores, and pulse lasers with different parameters are introduced into each fiber core;
the optical phase change material film (702) is made of a chalcogenide compound, wherein the film is specifically germanium-antimony-tellurium alloy (Ge 2 Sb 2 Te 5 ) Silver indium antimony tellurium alloy (AgInSbTe), and the like;
the optical phase change material film (702) has at least two phases, namely a crystalline state and an amorphous state, and an intermediate state between the crystalline state and the amorphous state, and the reflectivity of different phases in a communication wave band is different;
the optical phase change material film (702) is combined with the end face of the multi-core optical fiber (701) in a radio frequency magnetron sputtering mode;
the anti-oxidation and reflection-increasing film (703) is made of Indium Tin Oxide (ITO) or gold film (Au) and the like, so that the optical phase change material film (702) is prevented from being oxidized when being exposed in the air, and the reflection of a communication wave band is increased;
the anti-oxidation reflection-increasing film (703) is combined with the optical phase change material film (702) in a radio frequency magnetron sputtering mode;
the multi-core fiber memristor (7) is welded with the multi-core fiber output by the multi-core fiber fan (6) in a core-to-core manner, so that optical signals of all wavelength channels can be transmitted into corresponding fiber cores of the multi-core fiber memristor (7);
the read multi-core detection module comprises an optical fiber filter array (8), a photoelectric detector array (9), an acquisition card (10) and an upper computer (11);
the optical fiber filter array (8) comprises a plurality of optical fiber band-pass filters (801-807) which are used for allowing only wavelength optical signals of the detection continuous laser to pass;
the photoelectric detector array (9) comprises a plurality of single PIN photoelectric detectors (901-907) and has the function of monitoring the size of optical signals reflected by each fiber core of the multi-core optical fiber memristor (7) in real time, namely reading the storage information of each fiber core;
the photoelectric detector array (9) outputs to the acquisition card (10) to realize electric signal acquisition;
the acquisition card (10) and the upper computer (11) are interacted to realize information transmission;
the number of channels in the seed source lasers (101-107), the dense wavelength division multiplexer.1 (201), the dense wavelength division multiplexer.2 (204), the one-to-two optical fiber coupler array (4), the optical fiber circulator array (5), the multi-core optical fiber fan (6), the optical fiber filter array (8) and the photoelectric detector array (9) is matched with the number of fiber cores of the multi-core optical fiber memristor (7);
the multi-core optical fiber memristor and the scheme of erasing, writing and reading are that an optical phase change material film (702) and an oxidation-resistant reflection-increasing film (703) are sequentially plated on the end face of the multi-core optical fiber (701) to construct the multi-core optical fiber memristor (7); the phase states of the optical phase change materials at the end faces of the fiber cores are respectively regulated and controlled by injecting erasing pulse laser and writing pulse laser into each fiber core, the reflectivity of the optical phase change materials in different phase states is different, and the storage state of each fiber core is read through reading continuous laser, so that multi-core nonvolatile all-optical storage is realized.
The invention has the beneficial effects that:
the invention endows the multi-core optical fiber with the capability of nonvolatile storage, inherits the characteristics of the multi-core optical fiber, improves the dimension of the nonvolatile storage of the single-core optical fiber based on the space division multiplexing concept, greatly improves the communication and storage capacity, and breaks through the information capacity limit of the current common single-mode optical fiber. The multi-core optical fiber memristor and the scheme of erasing, writing and reading are expected to be compatible with the current multi-core optical fiber communication and sensing technology so as to promote the development of the current optical fiber technology.
Description of the drawings:
FIG. 1 is a schematic diagram of a multi-core fiber memristor device and an "erase, write, read" scheme provided by the present invention.
The specific embodiment is as follows:
for clearly illustrating the multi-core optical fiber memristor device and the scheme of erasing, writing and reading, the invention is further described by combining the embodiment and the drawings, but the protection scope of the invention is not limited by the embodiment.
As shown in fig. 1, a seven-core optical fiber memristor (7) is illustrated as an example:
the scheme of the seven-core optical fiber memristor device and the scheme of erasing, writing and reading comprises a reading, writing and erasing laser output module (1, 2, 3, 4, 5 and 6), a seven-core optical fiber memristor (7) and a reading seven-core detection module (8, 9, 10 and 11).
The laser output module comprises a continuous laser (1), an optical pulse generating module (2), a one-to-N optical fiber coupler (3), a one-to-two optical fiber coupler array (4), an optical fiber circulator array (5) and a seven-core optical fiber fanner (6).
The continuous optical laser (1) for reading, writing and erasing comprises seed source lasers (101-107) for erasing and writing and a continuous optical laser (108) for reading; each seed source laser (101-107) outputs continuous laser with different wavelengths to the optical pulse generating module (2); the 'read' continuous laser (108) outputs detection continuous laser, and the output wavelength is inconsistent with the wavelength of the 'erase' seed source lasers (101-107); the continuous laser (1) and the upper computer (11) are used for interactively controlling and outputting parameters such as wavelength, intensity and the like of the continuous laser.
The optical pulse generation module (2) comprises a dense wavelength division multiplexer.1 (201), an intensity modulator (202), an erbium-doped pulse optical fiber amplifier (203), a dense wavelength division multiplexer.2 (204) and an electric pulse generator (205); the wavelength channels of the dense wavelength division multiplexer.1 (201) and the dense wavelength division multiplexer.2 (204) are matched with the seed source lasers (101-107) for erasing and writing; the function of the dense wavelength division multiplexer.1 (201) is to combine continuous laser beams of different wavelength channels output by the seed source lasers (101-107) into a single fiber, and input the single fiber into an intensity modulator (202) for light intensity modulation; the modulating pulse source of the intensity modulator (202) is provided by an electric pulse generator (205) which functions to intensity modulate the input optical signal, and when the intensity modulator (202) is at a suitable static operating point, the electric pulse generator (205) emits electric pulses, and the optical signal passing through the intensity modulator (202) is modulated by the electric pulses, thereby generating pulsed light; the erbium-doped pulse optical fiber amplifier (203) amplifies the optical pulse signal output by the intensity modulator (202) to realize high-power pulse optical signal output; the dense wavelength division multiplexer 2 (205) receives the optical pulse signals of each wavelength output by the erbium-doped pulse optical fiber amplifier (203) and separates the wavelengths into respective wavelength channels; the erbium-doped pulse optical fiber amplifier (203) and the electric pulse generator (204) interact with the upper computer (11) to realize the optical pulse signal output of target intensity.
The N-split optical fiber coupler (3) equally divides the energy of the detection continuous laser emitted by the read continuous laser (108) and inputs the energy into the two-split optical fiber coupler array (4); the one-to-two optical fiber coupler array (4) comprises seven one-to-two optical fiber couplers (401-407), and is used for coupling the detection continuous laser equally divided by the one-to-N optical fiber coupler (3) with the optical pulse signals incident to the respective wavelength channels and inputting the optical pulse signals into the optical fiber circulator array (5); the optical fiber circulator array (5) comprises seven optical fiber circulators (501-507) which transmit the optical energy of the respective wavelength channels from the port 1 to the port 2 and transmit the optical energy reflected by the back-end device from the port 2 to the port 3; a seven-core fiber fanner (6) couples optical signals of respective wavelength channels into corresponding cores of the seven-core fiber.
The seven-core optical fiber memristor (7) comprises a seven-core optical fiber (701), an optical phase change material film (702) and an oxidation-resistant reflection-increasing film (703).
The seven-core optical fiber (701) is provided with at least two fiber cores, and pulse lasers with different parameters are introduced into each fiber core; an optical phase change material film (702) made of a chalcogenide compound, wherein the film is specifically a germanium-antimony-tellurium alloy (Ge 2 Sb 2 Te 5 ) Silver indium antimony tellurium alloy (AgInSbTe), and the like; the optical phase change material film (702) has at least two phases, namely a crystalline state and an amorphous state, and an intermediate state between the crystalline state and the amorphous state, and the reflectivity of different phases in a communication wave band is different; the optical phase change material film (702) is combined with the end face of the seven-core optical fiber (701) in a radio frequency magnetron sputtering mode; the anti-oxidation and reflection-increasing film (703) is made of Indium Tin Oxide (ITO) or gold film (Au) and the like, so that the optical phase change material film (702) is prevented from being oxidized when being exposed in the air, and the reflection of a communication wave band is increased; the anti-oxidation and reflection-increasing film (703) is combined with the optical phase change material film (702) in a radio frequency magnetron sputtering mode.
The seven-core optical fiber memristor (7) and the seven-core optical fiber output by the seven-core optical fiber fanout device (6) are welded in a core-to-core mode, so that optical signals of all wavelength channels can be transmitted to corresponding fiber cores of the seven-core optical fiber memristor (7).
The seven-core detection module comprises an optical fiber filter array (8), a photoelectric detector array (9), an acquisition card (10) and an upper computer (11).
The optical fiber filter array (8) comprises seven optical fiber band-pass filters (801-807) which are used for allowing the wavelength optical signals of the detection continuous laser to pass through; the photoelectric detector array (9) comprises seven single PIN photoelectric detectors (901-907) and has the function of monitoring the size of optical signals reflected by each fiber core of the seven-core optical fiber memristor (7) in real time, namely reading the storage information of each fiber core; the photoelectric detector array (9) outputs to the acquisition card (10) to realize electric signal acquisition; the acquisition card (10) and the upper computer (11) are interacted to realize information transmission;
the number of channels in the seed source lasers (101-107), the dense wavelength division multiplexer.1 (201), the dense wavelength division multiplexer.2 (204), the one-to-two optical fiber coupler array (4), the optical fiber circulator array (5), the seven-core optical fiber fanning device (6), the optical fiber filter array (8) and the photoelectric detector array (9) is matched with the number of fiber cores of the seven-core optical fiber memristor (7).
The scheme of the seven-core optical fiber memristor and the scheme of wiping, writing and reading is that an optical phase change material film (702) and an oxidation-resistant reflection-increasing film (703) are sequentially plated on the end face of the seven-core optical fiber (701) to construct the seven-core optical fiber memristor (7); the phase states of the optical phase change materials at the end faces of the fiber cores are respectively regulated and controlled by injecting erasing pulse laser and writing pulse laser into each fiber core, the reflectivity of the optical phase change materials in different phase states is different, and the storage state of each fiber core is read through reading continuous laser, so that seven-core nonvolatile all-optical storage is realized.
While the foregoing is directed to embodiments of the present invention, other and further details of the invention may be had by the present invention, it should be understood that the foregoing description is merely illustrative of the present invention and that no limitations are intended to the scope of the invention, except insofar as modifications, equivalents, improvements or modifications are within the spirit and principles of the invention.
Claims (1)
1. The utility model provides a multicore optic fibre memristor device which characterized in that: the device comprises a read, write and erase laser output module (1, 2, 3, 4, 5 and 6), a multi-core optical fiber memristor (7) and a read multi-core detection module (8, 9, 10 and 11);
the reading, writing and erasing laser output module comprises a reading, writing and erasing continuous light laser (1), a light pulse generating module (2), a one-to-N optical fiber coupler (3), a one-to-two optical fiber coupler array (4), an optical fiber circulator array (5) and a multi-core optical fiber fanner (6);
the continuous optical laser (1) for reading, writing and erasing comprises seed source lasers (101-107) for erasing and writing and a continuous laser (108) for reading;
each of the seed source lasers (101-107) outputs continuous lasers with different wavelengths to the optical pulse generation module (2);
the read continuous laser (108) outputs detection continuous laser, and the output wavelength is inconsistent with the wavelength of the erase and write seed source lasers (101-107);
the reading, writing and erasing continuous light laser (1) and the upper computer (11) interactively regulate and control the wavelength and intensity parameters of the output continuous laser;
the optical pulse generation module (2) comprises a dense wavelength division multiplexer.1 (201), an intensity modulator (202), an erbium-doped pulse optical fiber amplifier (203), a dense wavelength division multiplexer.2 (204) and an electric pulse generator (205);
the wavelength channels of the dense wavelength division multiplexer.1 (201) and the dense wavelength division multiplexer.2 (204) are matched with the seed source lasers (101-107) for erasing and writing;
the function of the dense wavelength division multiplexer.1 (201) is to combine continuous laser beams of different wavelength channels output by the seed source lasers (101-107) into a single fiber, and input the single fiber into an intensity modulator (202) for light intensity modulation;
the modulation pulse source of the intensity modulator (202) is provided by an electric pulse generator (205), the function of the modulation pulse source is to perform intensity modulation on an input optical signal, when the intensity modulator (202) is at a proper static working point, the electric pulse generator (205) sends out electric pulses, and the optical signal passing through the intensity modulator (202) receives the electric pulses for modulation, so that pulsed light is generated;
the erbium-doped pulse optical fiber amplifier (203) amplifies the optical pulse signal output by the intensity modulator (202) to realize high-power pulse optical signal output;
the dense wavelength division multiplexer 2 (205) receives the optical pulse signals of each wavelength output by the erbium-doped pulse optical fiber amplifier (203) and separates the wavelengths into respective wavelength channels;
the erbium-doped pulse optical fiber amplifier (203) and the electric pulse generator (204) are interacted with the upper computer (11) to realize the output of optical pulse signals with target intensity;
the one-to-N optical fiber coupler (3) equally divides the energy of the detection continuous laser emitted by the read continuous laser (108) and inputs the energy into the one-to-two optical fiber coupler array (4);
the one-to-two optical fiber coupler array (4) comprises a plurality of one-to-two optical fiber couplers (401-407), and is used for coupling the detection continuous laser equally divided by the one-to-N optical fiber coupler (3) with the optical pulse signals incident to the respective wavelength channels and inputting the optical pulse signals into the optical fiber circulator array (5);
the optical fiber circulator array (5) comprises a plurality of optical fiber circulators (501-507), light energy of each wavelength channel is transmitted from the port 1 to the port 2, and light energy reflected by the back-end device is transmitted from the port 2 to the port 3;
the multi-core optical fiber fanner (6) couples the optical signals of the respective wavelength channels into corresponding cores of the multi-core optical fiber;
the multi-core fiber memristor (7) comprises a multi-core fiber (701), an optical phase change material film (702) and an oxidation-resistant reflection-increasing film (703);
the multi-core optical fiber (701) is provided with at least two fiber cores, and pulse lasers with different parameters are introduced into each fiber core;
the optical phase change material film (702) is made of a chalcogenide compound, wherein the film is specifically germanium-antimony-tellurium alloy (Ge 2 Sb 2 Te 5 ) Or silver indium antimony tellurium alloy (AgInSbTe）；
The optical phase change material film (702) has at least two phases, namely a crystalline state and an amorphous state, and an intermediate state between the crystalline state and the amorphous state, and the reflectivity of different phases in a communication wave band is different;
the optical phase change material film (702) is combined with the end face of the multi-core optical fiber (701) in a radio frequency magnetron sputtering mode;
the anti-oxidation and reflection-increasing film (703) is made of Indium Tin Oxide (ITO) or gold (Au), so that the optical phase change material film (702) is prevented from being oxidized when being exposed in the air, and the reflection of a communication wave band is increased;
the anti-oxidation reflection-increasing film (703) is combined with the optical phase change material film (702) in a radio frequency magnetron sputtering mode;
the multi-core fiber memristor (7) is welded with the multi-core fiber output by the multi-core fiber fan (6) in a core-to-core manner, so that optical signals of all wavelength channels can be transmitted into corresponding fiber cores of the multi-core fiber memristor (7);
the read multi-core detection module comprises an optical fiber filter array (8), a photoelectric detector array (9), an acquisition card (10) and an upper computer (11);
the optical fiber filter array (8) comprises a plurality of optical fiber band-pass filters (801-807) and is used for allowing only wavelength optical signals of the detection continuous laser to pass through;
the photoelectric detector array (9) comprises a plurality of single PIN photoelectric detectors (901-907) and is used for monitoring the sizes of optical signals reflected by each fiber core of the multi-core optical fiber memristor (7) in real time, namely reading the storage information of each fiber core;
the photoelectric detector array (9) outputs to the acquisition card (10) to realize electric signal acquisition;
the acquisition card (10) and the upper computer (11) are interacted to realize information transmission;
the number of channels in the seed source lasers (101-107), the dense wavelength division multiplexer.1 (201), the dense wavelength division multiplexer.2 (204), the one-to-two optical fiber coupler array (4), the optical fiber circulator array (5), the multi-core optical fiber fan (6), the optical fiber filter array (8) and the photoelectric detector array (9) is matched with the number of fiber cores of the multi-core optical fiber memristor (7);
the multi-core optical fiber memristor and the scheme of erasing, writing and reading are that an optical phase change material film (702) and an oxidation-resistant reflection-increasing film (703) are sequentially plated on the end face of the multi-core optical fiber (701) to construct the multi-core optical fiber memristor (7); the phase states of the optical phase change materials at the end faces of the fiber cores are respectively regulated and controlled by injecting erasing pulse laser and writing pulse laser into each fiber core, the reflectivity of the optical phase change materials in different phase states is different, and the storage state of each fiber core is read through reading continuous laser, so that multi-core nonvolatile all-optical storage is realized.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111021709.6A CN113724758B (en) | 2021-09-01 | 2021-09-01 | Multicore fiber memristor device and scheme of erasing, writing and reading |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111021709.6A CN113724758B (en) | 2021-09-01 | 2021-09-01 | Multicore fiber memristor device and scheme of erasing, writing and reading |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113724758A CN113724758A (en) | 2021-11-30 |
| CN113724758B true CN113724758B (en) | 2023-07-14 |
Family
ID=78680663
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111021709.6A Active CN113724758B (en) | 2021-09-01 | 2021-09-01 | Multicore fiber memristor device and scheme of erasing, writing and reading |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113724758B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114142921B (en) * | 2021-12-09 | 2023-02-28 | 中山水木光华电子信息科技有限公司 | All-optical storage system and method based on different central wavelength optical fiber codes |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1604210A (en) * | 2004-11-10 | 2005-04-06 | 中国科学院上海微系统与信息技术研究所 | Phase change material capable of being used for phase transformation memory multi-stage storage |
| CN101546086A (en) * | 2009-04-23 | 2009-09-30 | 贵州大学 | Fabry-Perot cavity structure all-optical cache based on high-nonlinearity optical fiber |
| CN101556986A (en) * | 2009-05-20 | 2009-10-14 | 南京大学 | Multi-state resistive switching material, thin film prepared therewith, multi-sate resistive switching memory element and application of memory element in memory device |
| CN102411985A (en) * | 2011-09-13 | 2012-04-11 | 北京交通大学 | Storing device and method of optical fibre double-ring capable of erasing optical information |
| GB201518371D0 (en) * | 2015-10-16 | 2015-12-02 | Isis Innovation | Optical Device |
| WO2017046590A1 (en) * | 2015-09-18 | 2017-03-23 | Oxford University Innovation Ltd. | Photonic device |
| CN108470575A (en) * | 2018-03-23 | 2018-08-31 | 北京工业大学 | The full light memory device of imitative nerve based on Ge2Sb2Te5 |
| CN110262090A (en) * | 2019-06-28 | 2019-09-20 | 上海理工大学 | A kind of non-volatile fiber-optical switch structure and preparation method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003185876A (en) * | 2001-10-12 | 2003-07-03 | Photonixnet Corp | Wavelength division multiplexer and wavelength division multiplexing system |
-
2021
- 2021-09-01 CN CN202111021709.6A patent/CN113724758B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1604210A (en) * | 2004-11-10 | 2005-04-06 | 中国科学院上海微系统与信息技术研究所 | Phase change material capable of being used for phase transformation memory multi-stage storage |
| CN101546086A (en) * | 2009-04-23 | 2009-09-30 | 贵州大学 | Fabry-Perot cavity structure all-optical cache based on high-nonlinearity optical fiber |
| CN101556986A (en) * | 2009-05-20 | 2009-10-14 | 南京大学 | Multi-state resistive switching material, thin film prepared therewith, multi-sate resistive switching memory element and application of memory element in memory device |
| CN102411985A (en) * | 2011-09-13 | 2012-04-11 | 北京交通大学 | Storing device and method of optical fibre double-ring capable of erasing optical information |
| WO2017046590A1 (en) * | 2015-09-18 | 2017-03-23 | Oxford University Innovation Ltd. | Photonic device |
| GB201518371D0 (en) * | 2015-10-16 | 2015-12-02 | Isis Innovation | Optical Device |
| CN108470575A (en) * | 2018-03-23 | 2018-08-31 | 北京工业大学 | The full light memory device of imitative nerve based on Ge2Sb2Te5 |
| CN110262090A (en) * | 2019-06-28 | 2019-09-20 | 上海理工大学 | A kind of non-volatile fiber-optical switch structure and preparation method |
Non-Patent Citations (3)
| Title |
|---|
| Ge_2Sb_2Te_5相变薄膜光学及擦除性能研究;张广军,顾冬红,干福熹;光子学报(04);全文 * |
| GeSb_2Te_4相变光存储薄膜材料的短波长静态记录特性的研究;门丽秋,姜复松,刘超,干福熹;光学学报(01);全文 * |
| 非功能式光纤传感器设计基础（三）补偿技术及其机理分析;苑立波;光通信技术(01);全文 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113724758A (en) | 2021-11-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110262090B (en) | Nonvolatile optical fiber optical switch structure and preparation method thereof | |
| CN103345022B (en) | Asymmetric planar optical waveguide mode multiplexing/demultiplexing device based on few-mode fibers | |
| CN113724758B (en) | Multicore fiber memristor device and scheme of erasing, writing and reading | |
| CN105515677A (en) | Silicon photonics integration multi-wavelength optical sending and receiving module | |
| CN104734800A (en) | Optical multiplexer and emitting light device | |
| CN102135645B (en) | Optical switch system and feedback control method of signal light | |
| CN109581584A (en) | A kind of heterogeneous integrated scanning chip of silicon-lithium niobate and preparation method thereof, application | |
| CN104303087A (en) | Electrically switchable multi-spot laser probe technical field | |
| CN111404611B (en) | Double-signal transmission optical fiber and transmission device and method using same | |
| CN201069474Y (en) | A mixed polarization bundler based on photon crystal/multi-mode interference coupler | |
| CN110501783B (en) | Few-mode fiber beam forming system | |
| CN202025977U (en) | Tunable multi-wavelength optical fiber laser | |
| CN105470808A (en) | Tunable laser system with multi-optical-path output | |
| CN103098489B (en) | Outside cavity gas laser, optical sender and passive optical network | |
| CN101887202B (en) | M-Z type spectra shaper for optical fiber sensing | |
| CN201464752U (en) | Tunable filter based on transparent photoelectric ceramic | |
| CN202662972U (en) | Laser light source system with tunable output wavelength | |
| CN209086477U (en) | Wavelength-division multiplex mould group and light emitting devices | |
| CN101726871A (en) | Method for preparing transparent photoelectric ceramic-base tunable wave filter | |
| CN105203225A (en) | Optical fiber grating temperature detecting method and device | |
| CN201975683U (en) | Switchable multi-wavelength semiconductor optical fiber ring laser | |
| CN112636838B (en) | Short-distance multi-wavelength multimode communication system | |
| CN203908511U (en) | Fiber bragg grating strain detection device | |
| EP0231629A2 (en) | Optical switching | |
| CN113703244A (en) | Large-scale integrated electro-optic micro-ring optical phased array |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |