CN113718219A - Thin film deposition method and thin film deposition apparatus - Google Patents
Thin film deposition method and thin film deposition apparatus Download PDFInfo
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- CN113718219A CN113718219A CN202111007035.4A CN202111007035A CN113718219A CN 113718219 A CN113718219 A CN 113718219A CN 202111007035 A CN202111007035 A CN 202111007035A CN 113718219 A CN113718219 A CN 113718219A
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- 238000000427 thin-film deposition Methods 0.000 title claims description 13
- 238000007736 thin film deposition technique Methods 0.000 title claims description 8
- 238000006243 chemical reaction Methods 0.000 claims abstract description 157
- 239000011261 inert gas Substances 0.000 claims abstract description 119
- 239000007789 gas Substances 0.000 claims abstract description 97
- 239000000758 substrate Substances 0.000 claims abstract description 66
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 62
- 239000013077 target material Substances 0.000 claims abstract description 57
- 239000002245 particle Substances 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 40
- 150000002500 ions Chemical class 0.000 claims abstract description 38
- 229910052786 argon Inorganic materials 0.000 claims abstract description 33
- 230000009471 action Effects 0.000 claims abstract description 22
- 230000008569 process Effects 0.000 claims abstract description 16
- 239000000470 constituent Substances 0.000 claims abstract description 8
- 239000012782 phase change material Substances 0.000 claims description 14
- 229910052743 krypton Inorganic materials 0.000 claims description 3
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 3
- 229910052704 radon Inorganic materials 0.000 claims description 3
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052724 xenon Inorganic materials 0.000 claims description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 3
- 238000000151 deposition Methods 0.000 abstract description 11
- 230000008021 deposition Effects 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 41
- 238000004544 sputter deposition Methods 0.000 description 34
- 230000005684 electric field Effects 0.000 description 19
- 230000008859 change Effects 0.000 description 11
- 239000011248 coating agent Substances 0.000 description 11
- 238000000576 coating method Methods 0.000 description 11
- 230000033001 locomotion Effects 0.000 description 11
- 238000005240 physical vapour deposition Methods 0.000 description 7
- 238000001755 magnetron sputter deposition Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 239000000956 alloy Substances 0.000 description 3
- -1 argon ions Chemical class 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 229910001215 Te alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000010517 secondary reaction Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/345—Applying energy to the substrate during sputtering using substrate bias
Abstract
The embodiment of the disclosure discloses a film deposition method and film deposition equipment, wherein the film deposition method comprises the following steps: introducing inert gas with atomic weight larger than that of argon into the reaction chamber; in the process of introducing the inert gas into the reaction chamber, applying ionization voltage between the target material and the substrate in the reaction chamber to ionize the inert gas to generate inert gas ions to bombard the target material; stopping introducing the inert gas when the gas pressure in the reaction chamber reaches a preset value; and applying a magnetic field to the reaction chamber so as to enable charged particles in plasma generated by ionization of the target to bombard the target under the action of the magnetic field, so that the constituent particles of the target are deposited on the substrate.
Description
Technical Field
The disclosed embodiments relate to the field of semiconductor technology, and in particular, to a thin film deposition method and apparatus.
Background
Phase change memory (PCRAM) is a new type of memory technology that has been developed in recent years, and it uses a phase change thin film material to implement reversible phase change between crystalline and amorphous states under the action of photoelectric pulse to implement data storage. There is a great interest in not only meeting various requirements of the nonvolatile memory but also having a relatively simple fabrication process. The phase change memory thin film is generally grown using Physical Vapor Deposition (PVD) or Chemical Vapor Deposition (CVD), which is more widely used due to excellent thin film characteristics.
The physical vapor deposition technology is a technology of gasifying the surface of a material source (target material solid or liquid) into gaseous atoms, molecules or partially ionizing the gaseous atoms, the molecules or the ions into ions by a physical method under the vacuum condition, and depositing a film with a certain special function on the surface of a substrate by a low-pressure gas (or plasma) process. The main methods of physical vapor deposition include vacuum evaporation, sputter coating, arc plasma coating, ion coating, and molecular beam epitaxy. Physical vapor deposition techniques have been developed to deposit not only metal films, alloy films, but also compound, ceramic, semiconductor, polymer films, and the like. Wherein, the magnetron sputtering method is most suitable for obtaining the phase-change material with higher quality.
In the related art, the quality of the phase-change material film deposited by the magnetron sputtering method is not high, and the electrical performance and other physical properties of the phase-change material film are influenced, so that the performance of the phase-change memory is influenced. Therefore, how to improve the quality of the deposited phase-change material film is an urgent problem to be solved.
Disclosure of Invention
In view of the above, the embodiments of the present disclosure provide a thin film deposition method and a thin film deposition apparatus.
According to a first aspect of embodiments of the present disclosure, there is provided a thin film deposition method including:
introducing an atomic weight inert gas with the atomic weight larger than that of the argon into the reaction chamber;
in the process of introducing the inert gas into the reaction chamber, applying ionization voltage between the target material and the substrate in the reaction chamber to ionize the inert gas to generate inert gas ions to bombard the target material;
stopping introducing the inert gas when the gas pressure in the reaction chamber reaches a preset value;
and applying a magnetic field to the reaction chamber so as to enable charged particles in plasma generated by ionization of the target to bombard the target under the action of the magnetic field, so that the constituent particles of the target are deposited on the substrate.
In some embodiments, after stopping the introduction of the inert gas, the method further comprises:
and applying a bias voltage between the target material and the substrate so as to enable the charged particles to bombard the target material under the action of the bias voltage.
In some embodiments, the bias voltage range is: 300V to 10000V.
In some embodiments, the stopping the introduction of the inert gas when the gas pressure in the reaction chamber reaches a preset value includes:
detecting a gas pressure in the reaction chamber, and comparing the detected gas pressure with the preset value;
and stopping introducing the inert gas when the detected gas pressure reaches the preset value.
In some embodiments, the preset values range from: 0.1Pa to 10 Pa.
In some embodiments, the ionizing voltage is applied between the target and the substrate for a time period of: 1s to 10 s;
and/or the presence of a gas in the gas,
before introducing the inert gas having an atomic weight greater than that of argon into the reaction chamber, the method further comprises: the reaction chamber is evacuated.
In some embodiments, the target comprises a metal alloy phase change material;
and/or the presence of a gas in the gas,
the inert gas comprises at least one of: krypton gas; xenon gas; and (3) radon gas.
In some embodiments, the applying a magnetic field into the reaction chamber comprises:
and introducing current into an electromagnetic coil surrounding the outer wall of the reaction chamber so as to generate the magnetic field in the reaction chamber.
According to a second aspect of the embodiments of the present disclosure, there is provided a thin film deposition apparatus including:
a reaction chamber;
the bearing device is positioned in the reaction chamber and used for bearing the substrate;
the cathode plate is positioned at the top of the reaction chamber and is used for being connected with the target;
the anode plate is positioned at the bottom of the reaction chamber and connected with the bearing device so as to enable the target material and the substrate to be oppositely arranged;
the gas inlet pipe is communicated with the interior of the reaction chamber and is used for introducing inert gas with atomic weight larger than that of the argon into the reaction chamber; wherein the inert gas is ionized to generate inert gas ions to bombard the target material, so that the target material is ionized to generate charged particles
The electromagnetic coil surrounds the outer wall of the reaction chamber; when the electromagnetic coil is electrified, the electrified electromagnetic coil is used for generating a magnetic field in the reaction chamber, so that the charged particles bombard the target under the action of the magnetic field to ionize the target;
and the controller is used for controlling to stop introducing the inert gas into the reaction chamber and controlling the electromagnetic coil to generate the magnetic field when the gas pressure in the reaction chamber reaches a preset value.
In some embodiments, the apparatus further comprises:
and the working power supply is respectively electrically connected with the controller and the cathode plate and the anode plate and is used for applying bias voltage in a range of 300V to 10000V between the cathode plate and the anode plate when receiving a starting command of the controller.
According to the embodiment of the disclosure, the inert gas with the atomic weight larger than that of the argon is introduced into the reaction chamber as the working gas, and the introduction of the inert gas is stopped when the gas pressure in the reaction chamber reaches the preset value, so that the use amount of the inert gas and the concentration of the inert gas in the reaction chamber are greatly reduced, the probability of the inert gas atoms remaining in the deposited film is reduced, the performance of the deposited film is improved, and the performance of the device is further improved.
In addition, through forming the magnetic field in the reaction chamber, on one hand, the movement of electrons generated by the ionization of the inert gas in the reaction chamber is complicated, the movement route of the electrons is prolonged, the collision probability of inert gas atoms and the electrons is increased, and the ionization rate of the inert gas in the reaction chamber is improved, so that more inert gas ions are ionized to bombard the target material, the target material is ionized, and the sputtering reaction of the target material is promoted.
On the other hand, under the action of the magnetic field, the energy of the charged particles can be improved, more target plasma can be excited and bombarded, and thus, even if the inert gas is stopped to be introduced, the plasma generated by the extra power can be used for maintaining the continuous progress of the sputtering reaction.
Drawings
FIG. 1 is a schematic diagram illustrating a magnetron sputter coating process according to one exemplary embodiment;
FIG. 2 is a schematic diagram illustrating a sputter reaction according to one exemplary embodiment;
FIG. 3 is a flow chart illustrating a method of thin film deposition according to an exemplary embodiment;
FIG. 4 is a schematic view of a thin film deposition apparatus according to an exemplary embodiment;
fig. 5a and 5b are schematic views illustrating another thin film deposition apparatus according to an exemplary embodiment.
Detailed Description
The technical solution of the present disclosure is further described in detail below with reference to the drawings and specific embodiments of the specification.
In the embodiments of the present disclosure, the terms "first", "second", and the like are used for distinguishing similar objects, and are not used for describing a particular order or sequence.
In the disclosed embodiment, the term "a is in contact with B" includes the case where a is in direct contact with B, or A, B is in contact with B indirectly with another component interposed between the two.
In embodiments of the present disclosure, the term "layer" refers to a portion of material that includes a region having a thickness. A layer may extend over the entirety of the underlying or overlying structure or may have an extent that is less than the extent of the underlying or overlying structure. Furthermore, a layer may be a region of a homogeneous or heterogeneous continuous structure having a thickness less than the thickness of the continuous structure. For example, a layer may be located between the top and bottom surfaces of the continuous structure, or a layer may be between any horizontal pair at the top and bottom surfaces of the continuous structure. The layers may extend horizontally, vertically and/or along inclined surfaces. Also, a layer may include multiple sublayers.
It is to be understood that the meaning of "on … …," "over … …," and "over … …" in this disclosure should be read in the broadest manner such that "on … …" not only means that it is "on" something without intervening features or layers therebetween (i.e., directly on something), but also includes the meaning of "on" something with intervening features or layers therebetween.
It should be noted that although the present description is described in terms of embodiments, not every embodiment includes only a single technical solution, and such description of the embodiments is merely for clarity, and those skilled in the art should make the description as a whole, and the technical solutions in the embodiments may be appropriately combined to form other embodiments that can be understood by those skilled in the art.
Magnetron sputtering is one kind of Physical Vapor Deposition (PVD), can be used for preparing various materials such as metal, semiconductor, insulator and the like, and has the advantages of simple equipment, easy control, large coating area, strong adhesive force and the like.
In magnetron sputtering, argon is generally used as a working gas, and is ionized into argon ions, which bombard the surface of a target material at an accelerated speed under the action of an electric field, so that the target material is sputtered. In the sputtered particles, neutral target atoms or molecules are deposited on the substrate to form a thin film.
Referring to fig. 1, in a vacuum chamber, a coating target is fixed on a negative electrode, a substrate is fixed on a positive electrode, argon gas with low pressure is introduced into the vacuum coating chamber, the argon gas is ionized to form argon positive ions, and the argon positive ions fly to the coating target positioned on the negative electrode under the acceleration of an electric field, so that target atoms are sputtered out to be deposited on the substrate to form a product. The magnet is arranged on one side of the coating target material, which is far away from the substrate, so that a magnetic field is formed near one side of the coating target material, which is close to the substrate, the plasma density is increased, the sputtering rate of the coating target material is improved, and the deposition rate of a film on the substrate is improved.
Magnetron sputtering is a complex reaction that when high energy incident ions (e.g., positive argon ions) bombard the surface of a target, a series of reactions occur that sputter a series of particles. Referring to fig. 2, in the sputtering deposition process, when incident ions bombard the surface of the target to be coated, a series of complex physical or chemical change processes are generated, such as sputtering of target atoms, injection into the target to cause structural rearrangement, generation of secondary electrons, etc., and the gas adsorbed by the target is also released or decomposed due to the ion bombardment.
During sputter coating, there is an important effect that the charged ions of the working gas (e.g., positive argon ions) are electrically neutralized at the target surface to form atoms that bounce back toward the substrate. Because the atoms which are rebounded back to fly to the substrate are not charged, the atoms are not influenced by the electromagnetic field near the target material, and the charged energy particle flow which generates the bombardment action on the film surface growing on the surface of the substrate is formed. In addition, the working gas atoms (e.g., argon atoms) scattered near the substrate surface may also fly toward the substrate, bombarding the film surface growing on the substrate surface.
In the process of depositing a film on the surface of a substrate, because the growth film surface is in a non-equilibrium state, the activity of deposited atoms on the film surface is enhanced, the temperature of the film surface is raised as a result of bombardment of the charge energy particle flow on the film surface, and rebounded working gas atoms enter and finally remain in the film, so that the growth process, the microstructure and the performance of the film are changed, and the electrical performance and other physical properties of the film are influenced. For example, when a phase change material layer (e.g., a Ge-Sb-Te alloy material) of the phase change memory is formed by a magnetron sputtering method, atoms of argon gas, which is a working gas, remain in a thin film of the phase change material layer due to the above-mentioned effect, and pollute the phase change material layer, affect the performance of the phase change material layer, and further affect the performance of the phase change memory.
Fig. 3 is a flowchart illustrating a thin film deposition method applied to a thin film deposition apparatus according to an exemplary embodiment, the apparatus including: the device comprises a reaction chamber, a target material positioned at the top of the reaction chamber and a substrate positioned at the bottom of the reaction chamber. Referring to fig. 3, the method includes the steps of:
s110: introducing an atomic weight inert gas with the atomic weight larger than that of the argon into the reaction chamber;
s120: in the process of introducing inert gas into the reaction chamber, applying ionization voltage between the target material and the substrate in the reaction chamber to ionize the inert gas to generate inert gas ions to bombard the target material;
s130: stopping introducing the inert gas when the gas pressure in the reaction chamber reaches a preset value;
s140: and applying a magnetic field into the reaction chamber to enable charged particles in plasma generated by ionization of the target to bombard the target under the action of the magnetic field so as to enable the constituent particles of the target to be deposited on the substrate.
The inert gas has stable chemical property, is inert reaction with the target material, hardly generates chemical reaction with the target material, and can be used as working gas for sputtering coating.
Illustratively, embodiments of the present disclosure employ an inert gas having an atomic weight greater than that of argon as the working gas, including: krypton (Kr), xenon (Xe), radon (Rn), or a combination thereof.
For example, in step S120, the target may be connected to a cathode of an operating power supply, the substrate may be connected to an anode of the operating power supply, and during the process of introducing the inert gas into the reaction chamber, before the sputtering reaction starts, an ionization voltage is applied between the cathode target and the substrate, for example, a direct current voltage or a radio frequency voltage is applied between the cathode target and the anode substrate, so that the inert gas generates an glow discharge to generate inert gas ions.
Illustratively, applying an ionization voltage between the target and the substrate may be accomplished by grounding the anode substrate and applying a negative bias to the cathode target to create a strong electric field between the target and the substrate, the direction of the electric field being directed from the substrate toward the target, and the movement of positively charged ions in the inert gas ions generated by ionization toward the target may be controlled to bombard the target.
It is understood that atoms with higher atomic weights have greater kinetic energy when the velocities of motion are the same. The same amount of large atomic weight (greater than that of argon) inert gas has a higher bombardment energy than argon as the working gas. Illustratively, the same gas flow rate of a large atomic weight (greater than that of argon) inert gas may produce as much bombardment energy as 2 to 1000 times higher than that produced with argon as the working gas. Therefore, in the initial stage of sputtering coating, a very small amount of inert gas with large atomic weight (larger than that of argon) can initiate sputtering reaction, and more target atoms and target ions are sputtered, so that the sputtering rate of the target is improved, and high film deposition efficiency is obtained.
In addition, when the required bombardment energy is the same, compared with the case that argon gas is continuously introduced as the working gas in the whole sputtering process, the inert gas with the atomic weight larger than that of the argon gas is adopted as the working gas in the embodiment of the disclosure, and only a small amount of the inert gas is needed, so that the amount of the inert gas can be reduced.
The predetermined value in step S130 is lower than the gas pressure in the reaction chamber when argon is used as the working gas.
For example, S140 may be performed during the inert gas introduction.
Preferably, S140 may be performed after the inert gas introduction is stopped.
It should be emphasized that, in the process of performing the above-mentioned thin film deposition method, after the inert gas is stopped being introduced, S140 is performed to deposit the constituent particles of the target material on the substrate (i.e. to coat the substrate), which can greatly reduce the amount of the inert gas, and greatly reduce the concentration of the inert gas in the reaction chamber during the process of performing S140, thereby greatly reducing the probability that the ions of the inert gas bounce to the surface of the substrate after being electrically neutralized on the surface of the target material, and also greatly reducing the probability that atoms of the inert gas are scattered to the surface of the substrate, thereby greatly reducing the probability that the inert gas enters and remains in the surface film layer of the substrate, which is beneficial to improving the purity of the surface film layer of the substrate, and further improving the quality of the surface deposited film layer of the substrate.
For example, when the method is adopted to prepare the film layer of the phase change material layer of the phase change memory, inert gas atoms can be greatly reduced from entering the film layer of the phase change material layer, and the generation of holes in the film layer can be reduced, so that a more stable film material is obtained, the volume change rate of the phase change material layer during working is reduced, the electrical property is improved, the physical property is more optimized, a film with lower operating voltage and power consumption is obtained, the low voltage and low power consumption of the storage unit are realized, the driving current of the storage unit is effectively reduced, the crosstalk between the storage voltages is reduced, and the high-density storage array is realized.
In S140, the constituent particles of the target deposited on the substrate may include: uncharged elements in plasma generated by ionization of the target material and/or uncharged elements directly bombarded from the target material when the target material is bombarded by the charged particles. It is understood that the constituent elements of the target include the two uncharged elements described above.
According to the embodiment of the disclosure, the inert gas with the atomic weight larger than that of the argon is introduced into the reaction chamber as the working gas, and the introduction of the inert gas is stopped when the gas pressure in the reaction chamber reaches the preset value, so that the use amount of the inert gas and the concentration of the inert gas in the reaction chamber are greatly reduced, the probability of the inert gas atoms remaining in the deposited film is reduced, the performance of the deposited film is improved, and the performance of the device is further improved.
In addition, through forming the magnetic field in the reaction chamber, on one hand, the movement of electrons generated by the ionization of the inert gas in the reaction chamber is complicated, the movement route of the electrons is prolonged, the collision probability of inert gas atoms and the electrons is increased, and the ionization rate of the inert gas in the reaction chamber is improved, so that more inert gas ions are ionized to bombard the target material, the target material is ionized, and the sputtering reaction of the target material is promoted.
On the other hand, under the action of the magnetic field, the energy of the charged particles can be improved, more target plasma can be excited and bombarded, and therefore even though the inert gas is stopped being introduced, the plasma generated by the ionization of the target can be used for maintaining the continuous progress of the sputtering reaction.
In some embodiments, as shown in FIG. 4, an apparatus employing the above method is configured with an electromagnetic coil surrounding the side wall of the reaction chamber; in S140, applying a magnetic field to the reaction chamber may include: and introducing current into an electromagnetic coil surrounding the outer wall of the reaction chamber so as to generate a magnetic field in the reaction chamber.
It will be appreciated that when an electrical current (including a direct current or an alternating current) is applied to the electromagnetic coil, a magnetic field is generated within the electromagnetic coil (e.g., a magnetic field is generated between the top target and the bottom substrate in the reaction chamber). The direction of the magnetic field depends on the direction of the current in the electromagnetic coil, e.g. the direction of the magnetic field may be directed from the substrate to the target or from the target to the substrate. The magnetic field strength depends on the current strength.
In other embodiments, electromagnetic coils may also be provided around the top and bottom of the reaction chamber. Alternatively, electromagnetic coils are provided both around the side walls of the reaction chamber and around the top and bottom of the reaction chamber.
In some embodiments, after stopping the introduction of the inert gas, the method further comprises:
and applying a bias voltage between the target material and the substrate so as to enable the charged particles to bombard the target material under the action of the bias voltage.
Illustratively, referring to FIG. 4, a substrate is disposed at the bottom of the reaction chamber in contact with the anode, and a target is disposed at the top of the reaction chamber in contact with the cathode, the substrate being parallel to and opposite the target.
Even after the inert gas is stopped being introduced into the reaction chamber, the inert gas ions with large atomic weight obtain high energy to bombard the target under the action of the electric field generated by the bias voltage, and a series of target particles including target atoms, target ions (i.e. the charged particles) and electrons are sputtered. Target atoms can be sputtered to the surface of the substrate to deposit and form a film, target ions continue to bombard the target under the action of an electric field and continue to sputter the target atoms and the target ions, and at the moment, the sputtering reaction can be continuously carried out even if inert gas is not ionized.
Under the action of the electric field and the magnetic field between the target and the substrate, the movement of the inert gas particles and the charged particles is complicated, for example, under the combined action of the electric field force and the magnetic field force, the direction of the charged particles incident on the surface of the target is diversified, namely, the charged particles are incident on the surface of the target from different directions, the proportion of the charged particles obliquely bombarding the surface of the target can be increased, compared with the situation that the charged particles vertically irradiate the surface of the target, the sputtering rate of the obliquely bombarding the target is higher, the sputtering effect is better, and the uniformity of a deposited film layer is favorably improved.
In some embodiments, the bias voltage applied is in the range of: 300V to 10000V.
For example, referring to fig. 4, the anode plate may be grounded by applying bias voltages through the cathode plate at the top of the reaction chamber and the anode plate at the bottom of the reaction chamber, and the cathode plate applies a high negative bias voltage (e.g., 2000V, 3000V, or 5000V, etc.), so that a potential difference is generated between the target material and the substrate to form an electric field, and the direction of the electric field is directed from the substrate to the target material to promote positive ions to bombard the target material.
Because the atomic mass of the inert gas is relatively larger than that of the argon, the mass of the inert gas ions generated by ionization is also larger, and stronger electric field acceleration is needed to obtain higher motion speed on a limited motion path. By applying high negative bias voltage to the cathode target, a strong enough electric field is generated between the target and the substrate, so that inert gas ions obtain larger kinetic energy to bombard the target, the sputtering rate of the target is improved, more target ions are excited, the target ions continue to bombard the target under the action of the electric field force, target atoms and target ions continue to be sputtered, and the continuous operation of the target sputtering reaction can be maintained even under the condition that the inert gas is stopped being introduced.
According to the embodiment of the disclosure, the bias voltage between the target and the substrate is set in a reasonable range, so that the charged particles have enough energy to bombard the target, the sputtering rate of the target is improved, the target can generate a self-ionization reaction, and the continuous progress of the sputtering reaction is maintained. And target material atoms are splashed out after the kinetic energy is exchanged with bombardment particles, so that the energy of the sputtered target material atoms is high, the diffusion capacity of the atoms during deposition is improved, the compactness of a deposited film is improved, and the deposited film and a substrate have strong adhesive force.
In some embodiments, S130 may include:
detecting the gas pressure in the reaction chamber, and comparing the detected gas pressure with a preset value;
and stopping introducing the inert gas when the detected gas pressure reaches a preset value.
Illustratively, before introducing the inert gas having an atomic weight greater than that of the argon gas into the reaction chamber, the method further comprises: the reaction chamber is evacuated.
After the vacuum degree in the reaction chamber meets the requirement, the gas pressure in the reaction chamber can be detected while introducing inert gas as working gas. Alternatively, in some embodiments, the detection of the gas pressure in the reaction chamber may be started after the inert gas is introduced for a certain period of time. It is emphasized that the gas pressure in the reaction chamber does not reach the preset value before starting to detect the gas pressure in the reaction chamber.
For example, the step of comparing the detected gas pressure with a preset value may be performed in real time after the gas pressure in the reaction chamber is detected, so that the timing of stopping the introduction of the inert gas may be determined more timely.
In other embodiments, in the process of introducing the inert gas into the reaction chamber, after the gas pressure in the reaction chamber is detected, the step of comparing the detected gas pressure with the preset value may also be performed at a fixed time period.
For example, the detected gas pressure may be periodically compared with a preset value after the gas pressure in the reaction chamber is detected at fixed time intervals.
As another example, the detected gas pressure may be compared to a preset value periodically after the gas pressure in the reaction chamber is detected at variable time intervals.
In some embodiments, the variable time interval for performing the comparing step may be adjusted based on a difference between the detected gas pressure and a preset value.
For example, when the difference between the currently detected gas pressure and the preset value is smaller than the difference between the last detected gas pressure and the preset value, a certain time period may be shortened on the basis of the time interval between the last execution of the comparing step and the current execution of the comparing step as the time interval between the next execution of the comparing step and the current execution of the comparing step.
For another example, when the difference between the currently detected gas pressure and the preset value is larger than the difference between the last detected gas pressure and the preset value, a time period may be added on the basis of the time interval between the last execution of the comparing step and the current execution of the comparing step, as the time interval between the next execution of the comparing step and the current execution of the comparing step.
In some embodiments, the method further comprises: and adjusting the speed of introducing the inert gas according to the difference between the detected gas pressure and a preset value.
For example, when the difference between the detected gas pressure and a preset value is gradually decreased, the gas pressure in the reaction chamber gradually approaches the preset value, and the inert gas may be introduced at a reduced speed.
In some embodiments, the method further comprises: adjusting the frequency of the step of detecting the gas pressure in the reaction chamber according to the difference between the detected gas pressure and a preset value.
For example, when the difference between the detected gas pressure and the preset value gradually decreases, the gas pressure in the reaction chamber gradually approaches the preset value, and at this time, the frequency of performing the step of detecting the gas pressure in the reaction chamber may be increased to improve the accuracy of determining when the gas pressure in the reaction chamber increases to be equal to the preset value.
In the embodiment of the present disclosure, it is not necessary to continuously introduce an inert gas into the reaction chamber, but only a certain amount of the inert gas is provided as a working gas to initiate a sputtering reaction (e.g., to perform an ignition function) in an initial stage, and then the sputtering reaction can be continuously performed through a series of secondary reactions such as self-ionization of atoms of the target material. Therefore, the use amount of the inert gas is saved, and the probability of inert gas atoms remaining in a film layer grown on the substrate can be reduced.
In some embodiments, the preset values in step S130 range from: 0.1Pa to 10 Pa.
Thin inert gas is introduced into the vacuum environment and is easy to ionize under the action of an electric field, when the pressure of the inert gas in the reaction chamber is higher, the ionization difficulty is increased, and the scattering effect among particles is enhanced, so that the sputtering rate of the target material is low, and the deposition of a film is not facilitated.
In some embodiments, in step S120, the ionizing voltage is applied between the target and the substrate for the following time: 1s to 10 s.
In the initial stage of sputter coating, the inert gas in the reaction chamber needs to be ignited and ionized, and the inert gas is ionized to generate inert gas ions to bombard the target material when ionization voltage is applied, so that sputtering is formed. If the time for applying the ionization voltage is too short, the ionization rate of the inert gas is too low, fewer ions are generated, the sputtering rate of the target material is low, and the coating efficiency is low. If the ionization voltage is applied for too long time, the ionization rate of the inert gas cannot be continuously improved by prolonging the ignition ionization time, and the power consumption is increased, which is not beneficial to improving the efficiency and saving the cost.
In the embodiment of the disclosure, by setting a reasonable time for applying the ionization voltage, the inert gas can generate plasma with sufficient concentration to initiate a sputtering reaction, and further, the self-ionization reaction of the target material is excited and maintained by the bias voltage and the magnetic field applied in the reaction chamber. During the process of depositing the film layer, even if the inert gas is stopped to be introduced, the sputtering reaction of the target material can be continuously carried out.
In some embodiments, the target comprises a metal alloy phase change material.
Illustratively, the constituent material of the target may include a GST (Ge-Sb-Te) alloy material having significantly different resistance values in crystalline and amorphous states, which may be used for a phase change memory layer of a phase change memory to store data.
Fig. 5a and 5b are schematic structural views illustrating a thin film deposition apparatus 100 according to an exemplary embodiment. As shown in conjunction with fig. 5a and 5b, the thin film deposition apparatus 100 includes:
a reaction chamber 10;
a carrier 12 located in the reaction chamber for carrying a substrate 13;
a cathode plate 14 positioned at the top of the reaction chamber 10 and used for connecting with the target 11;
an anode plate 15, which is positioned at the bottom of the reaction chamber 10 and is connected with the bearing device 12, so that the target 11 is arranged opposite to the substrate 13;
an inlet pipe 16, which is communicated with the interior of the reaction chamber 10 and is used for introducing an atomic weight inert gas with an atomic weight larger than that of the argon gas into the reaction chamber 10; wherein, the inert gas is ionized to generate inert gas ions to bombard the target 11, so that the target 11 is ionized to generate charged particles;
an electromagnetic coil 17 surrounding an outer wall of the reaction chamber 10 (see fig. 5 b); when the electromagnetic coil 17 is electrified, the electrified electromagnetic coil 17 is used for generating a magnetic field in the reaction chamber 10, so that the charged particles bombard the target 11 under the action of the magnetic field to ionize the target 11;
and the controller is used for controlling to stop introducing the inert gas into the reaction chamber 10 and controlling the electromagnetic coil 17 to generate a magnetic field when the gas pressure in the reaction chamber 10 reaches a preset value.
Illustratively, referring to fig. 5a, the cathode plate 14 and the anode plate 15 are respectively located at the top and bottom of the reaction chamber 10, and are parallel and opposite. The target 11 is fixed to a cathode plate 14, the substrate 13 is placed on a carrier 12, and the carrier 12 is positioned on an anode plate 15.
Illustratively, the thin film deposition apparatus 100 may further include a pressure detection device, and is connected to a controller (not shown) for detecting the gas pressure in the reaction chamber 10, and the controller controls the gas supply system to stop supplying the inert gas to the reaction chamber 10 when the pressure detection device detects that the gas pressure in the reaction chamber 10 reaches a preset value.
In some embodiments, the thin film deposition apparatus 100 further includes:
and an operating power supply 18 electrically connected to a controller (not shown) and the cathode plate 14 and the anode plate 15, respectively, for applying a bias voltage in a range of 300V to 10000V between the cathode plate 14 and the anode plate 15 upon receiving a turn-on command from the controller.
Illustratively, referring to fig. 5a, the cathode of the working power supply 18 is electrically connected to the cathode plate 14, the anode of the working power supply 18 is connected to the wall of the reaction chamber 10, and the anode plate 15 is in contact with the wall of the reaction chamber 10 and is electrically connected to the anode of the working power supply 18 through the wall. The anode plate 15 is grounded and a negative bias is applied to the cathode plate 14, so that a potential difference is generated between the cathode plate 14 and the anode plate 15 to form an electric field, the direction of the electric field is directed from the anode plate 15 to the cathode plate 14, and the electric field can bombard the target material with high energy by the particles with positive charges.
Illustratively, referring to fig. 5b (fig. 5b only shows the positional relationship between the reaction chamber 10 and the electromagnetic coil 17), the electromagnetic coil 17 surrounds the outer wall of the reaction chamber 10, and the electromagnetic coil 17 is used for passing current to form a magnetic field in the reaction chamber 10, so as to complicate the movement (e.g., diversify the movement direction) of the charged particles in the reaction chamber 10, and make the charged particles bombard the target material from different directions to promote the occurrence of the sputtering reaction, thereby sputtering more target material particles, such as target material atoms and target material ions.
The reaction chamber 10 further comprises a gas outlet 19, which may be located at the bottom, the top or the side wall of the reaction chamber 10, wherein the gas outlet 19 is connected to a vacuum pump (not shown) for evacuating the reaction chamber 10 and exhausting the gas in the reaction chamber 10.
According to the film deposition equipment provided by the embodiment of the disclosure, the inert gas with the atomic weight larger than that of the argon is introduced into the reaction chamber to serve as the working gas, and the introduction of the inert gas is stopped when the gas pressure in the reaction chamber reaches the preset value, so that the use amount of the inert gas and the concentration of the inert gas in the reaction chamber are greatly reduced, the probability of the inert gas atoms remaining in the deposited film is reduced, the improvement of the performance of the deposited film is facilitated, and the performance of a device is further improved.
On the other hand, high negative bias voltage is applied to the cathode target to generate an electric field between the target and the substrate, and the electromagnetic coil is arranged to generate a magnetic field in the reaction chamber, so that ions bombarding the target obtain higher bombardment energy and bombard the target at different incidence angles, more target atoms and target ions are sputtered from the target, the target atoms deposit on the substrate to form a film, the target ions continue to bombard the target under the action of the electric field, and the sputtering reaction on the surface of the target is promoted.
The above description is only for the specific embodiments of the present disclosure, but the scope of the present disclosure is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present disclosure, and all the changes or substitutions should be covered within the scope of the present disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.
Claims (10)
1. A thin film deposition method, comprising:
introducing inert gas with the atomic weight larger than that of the argon into the reaction chamber;
in the process of introducing the inert gas into the reaction chamber, applying ionization voltage between the target material and the substrate in the reaction chamber to ionize the inert gas to generate inert gas ions to bombard the target material;
stopping introducing the inert gas when the gas pressure in the reaction chamber reaches a preset value;
and applying a magnetic field to the reaction chamber so as to enable charged particles in plasma generated by ionization of the target to bombard the target under the action of the magnetic field, so that the constituent particles of the target are deposited on the substrate.
2. The method of claim 1, wherein after stopping the introduction of the inert gas, the method further comprises:
and applying a bias voltage between the target material and the substrate so as to enable the charged particles to bombard the target material under the action of the bias voltage.
3. The method of claim 2, wherein the bias voltage range is: 300V to 10000V.
4. The method of claim 1, wherein stopping the introduction of the inert gas when the gas pressure in the reaction chamber reaches a preset value comprises:
detecting the gas pressure in the reaction chamber, and comparing the detected gas pressure with the preset value;
and stopping introducing the inert gas when the detected gas pressure reaches the preset value.
5. The method according to claim 4, characterized in that the preset values range from: 0.1Pa to 10 Pa.
6. The method of claim 1,
the time for applying the ionization voltage between the target and the substrate is as follows: 1s to 10 s;
and/or the presence of a gas in the gas,
before introducing the inert gas having an atomic weight greater than that of argon into the reaction chamber, the method further comprises: the reaction chamber is evacuated.
7. The method of claim 1,
the target comprises a metal alloy phase change material;
and/or the presence of a gas in the gas,
the inert gas comprises at least one of: krypton gas; xenon gas; and (3) radon gas.
8. The method of any one of claims 1 to 7, wherein said applying a magnetic field into said reaction chamber comprises:
and introducing current into an electromagnetic coil surrounding the outer wall of the reaction chamber so as to generate the magnetic field in the reaction chamber.
9. A thin film deposition apparatus, comprising:
a reaction chamber;
the bearing device is positioned in the reaction chamber and used for bearing the substrate;
the cathode plate is positioned at the top of the reaction chamber and is used for being connected with the target;
the anode plate is positioned at the bottom of the reaction chamber and connected with the bearing device so as to enable the target material and the substrate to be oppositely arranged;
the gas inlet pipe is communicated with the interior of the reaction chamber and is used for introducing inert gas with atomic weight larger than that of the argon into the reaction chamber; the inert gas is ionized to generate inert gas ions to bombard the target material, so that the target material is ionized to generate charged particles;
the electromagnetic coil surrounds the outer wall of the reaction chamber; when the electromagnetic coil is electrified, the electrified electromagnetic coil is used for generating a magnetic field in the reaction chamber, so that the charged particles bombard the target under the action of the magnetic field to ionize the target;
and the controller is used for controlling to stop introducing the inert gas into the reaction chamber and controlling the electromagnetic coil to generate the magnetic field when the gas pressure in the reaction chamber reaches a preset value.
10. The apparatus of claim 9, further comprising:
and the working power supply is respectively electrically connected with the controller and the cathode plate and the anode plate and is used for applying bias voltage in a range of 300V to 10000V between the cathode plate and the anode plate when receiving a starting command of the controller.
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