CN113707684A - OLED display structure and display device - Google Patents
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/128—Active-matrix OLED [AMOLED] displays comprising two independent displays, e.g. for emitting information from two major sides of the display
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- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
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Abstract
The embodiment of the present disclosure discloses an OLED display structure, including: a light emitting structure layer for generating white light; a nano layer on the light emitting structure layer; a color conversion layer on the nanolayer; the nano layer and the light emitting structure layer form micro cavities suitable for different color resistance material wavelengths of the color conversion layer, so that the light extraction rate is improved. In order to improve the light-emitting rate of the white light OLED, the invention adopts a self-assembly mode to respectively add the layered nano-layers on the R/G/B color resistance or color conversion layer material, namely, a method for preparing a single-layer film is adopted to form micro-cavities suitable for different color resistance materials, so that the light with specific wavelength can be selected and enhanced, and the micro-cavities are used for enhancing the external quantum efficiency so as to improve the light-emitting rate of the white light OLED.
Description
Technical Field
The disclosure relates to the field of display, in particular to an OLED display structure and a display device.
Background
With the continuous improvement of living standard of people, the market requirements of large-area, ultra-thin and flexible healthy intelligent display technologies of display panels and lighting systems will gradually become the urgent needs of people's lives. Global LCD (Liquid-crystal display) panel requirements are stagnant, facing the crisis of excess production.
The new display technology has become the focus of research and development of various companies, in which an organic light-emitting diode (OLED) has received wide attention and has been rapidly developed in the scientific field due to its advantages of low driving voltage, high efficiency, fast response speed, wide viewing angle, lightness and thinness, large area, and capability of realizing flexible display. The OLED display device has the advantages of self-luminescence, no need of a backlight source, high contrast, thin thickness, wide viewing angle, high reaction speed, capability of being used for a flexible panel and the like, and is considered as a new application technology of a next-generation flat panel display.
In the conventional white light OLED product, only about 20% of light is emitted out of the OLED device, which greatly reduces the light extraction efficiency of the OLED device, and generally, the method for improving the light extraction efficiency includes: the improvement of the internal structure of the OLED device, the improvement of the light-emitting surface of the OLED device and the like. However, the commonly used film forming process or method causes the problem of uneven thickness of the structural layer, and the required design cannot be achieved, resulting in the unexpected improvement of the light-emitting rate.
Disclosure of Invention
To overcome at least some of the drawbacks and disadvantages of the related art, embodiments of the present disclosure provide an OLED display structure and a display device.
The present disclosure provides an OLED display structure comprising:
a light emitting structure layer for generating white light;
a nano layer on the light emitting structure layer;
a color conversion layer on the nanolayer;
the nano layer and the light emitting structure layer form micro cavities suitable for different color resistance material wavelengths of the color conversion layer, so that the light extraction rate is improved.
In one embodiment of the present invention, the light emitting structure layer includes: a Cathode (Cathode), an Anode (Anode), and an OLED light emitting layer between the Cathode (Cathode) and the Anode (Anode); the microcavity is a cavity space between the OLED light emitting layer and the nano layer; the color conversion layer includes: r (red)/G (green)/B (blue) color resists or Color Conversion Media (CCM) structures.
In one embodiment of the present invention, the nanolayer is prepared in a self-assembly manner; the microcavity is used for selecting and enhancing light with specific wavelength by using microcavity resonance effect of the light so as to improve the light extraction rate of the OLED display structure.
In one embodiment of the present invention, the self-assembly forms molecular aggregates with a specific order by intermolecular recognition, intermolecular weak interaction forces (e.g., hydrogen bonds, van der waals forces, electrostatic forces, etc.); the microcavity resonance effect is as follows: when the OLED light emitting layer or the light emitting area is positioned in a resonant cavity formed by the total reflection film and the semi-reflection film, and the cavity length and the wavelength of the light wave are in the same order of magnitude, the light with specific wavelength can be selected and enhanced.
In one embodiment of the invention, the self-assembly method for preparing the monolayer film uses water as a solvent for molecular level control of a deposited film structure; the nano-layer material is layered silicon dioxide SiO2Layered silicon nitride (Si)3N4) (ii) a The nano layer is positioned on the joint surface between the color resistance layer and the light emitting structure layer, and the light extraction rate is improved by utilizing the microcavity resonance effect.
In one embodiment of the present invention, the process for preparing a monolayer film by self-assembly comprises:
preparing spherical nano silicon dioxide by using a traditional hydrolysis method (Stober method);
controlling the particle size of the silicon dioxide, and performing alternating self-assembly with polycation through an acid washing process;
forming a controlled monolayer film.
In one embodiment of the present invention, the thicknesses of the nanolayers at different color resists corresponding to the nanolayers are different; the different thicknesses of the nano layers are used for forming micro-cavities with different color resistances and different cavity lengths, so that the light-emitting rate is increased after light with different wavelengths passes through the micro-cavities with different cavity lengths and different color resistances.
In one embodiment of the invention, the thickness of the nano layer corresponding to the R color resistance is 20-300 nm; the thickness of the nano layer corresponding to the G color resistance is 20-250 nm; the thickness of the nano layer corresponding to the color resistance B is 20-200 nm.
An embodiment of the present invention further provides a display device, including any one of the OLED structures described above, where the display device includes: a bottom-emitting white OLED display, a top-emitting white OLED display.
In order to improve the light-emitting rate of the white light OLED, the invention adopts a self-assembly mode to respectively add the layered nano-layers on the R/G/B Color resistance or Color conversion layer material (Color conversion material), namely, a method for preparing a single-layer film is adopted to form micro-cavities suitable for different Color resistance materials, so that the light with specific wavelength can be selected and enhanced, and the micro-cavities are used for External Quantum Efficiency (EQE) enhancement to improve the light-emitting rate of the white light OLED.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present disclosure, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a schematic diagram illustrating a microcavity resonance effect according to an embodiment of the disclosure.
FIG. 2 is a schematic structural diagram of a bottom emission white OLED + R/G/B-CCM according to an embodiment of the disclosure.
FIG. 3 is a schematic diagram of a top-emission white OLED + R/G/B-CCM structure according to an embodiment of the disclosure.
Fig. 4 is a schematic view of an OLED display structure according to an embodiment of the present disclosure.
FIG. 5 is a diagram of a single layer of spherical SiO prepared by a self-assembly method according to an embodiment of the disclosure2Schematic representation of microspheres.
FIG. 6 is a schematic diagram of a bottom-emitting white OLED display structure with a nanolayer, according to an embodiment of the present disclosure.
FIG. 7 is a schematic diagram of a top-emitting white OLED display structure with a nanolayer, according to an embodiment of the present disclosure.
Detailed Description
To make the objects, technical solutions and advantages of the embodiments of the present disclosure more clear, the technical solutions of the embodiments of the present disclosure will be described clearly and completely with reference to the drawings in the embodiments of the present disclosure, and it is obvious that the described embodiments are some, but not all embodiments of the present disclosure. All other embodiments, which can be derived by a person skilled in the art from the embodiments disclosed herein without making any creative effort, shall fall within the protection scope of the present disclosure.
The following description of the embodiments refers to the accompanying drawings for illustrating the specific embodiments in which the disclosure may be practiced. Directional terms used in the present disclosure, such as "up", "down", "front", "back", "left", "right", "inside", "outside", "side", etc., refer to directions of the attached drawings only. Accordingly, the directional terms used are used for the purpose of illustration and understanding, and are not used to limit the present disclosure.
The drawings and description are to be regarded as illustrative in nature, and not as restrictive. In the drawings, elements having similar structures are denoted by the same reference numerals. In addition, the size and thickness of each component illustrated in the drawings are arbitrarily illustrated for understanding and ease of description, but the present disclosure is not limited thereto.
In addition, in the description, unless explicitly described to the contrary, the word "comprise" will be understood to mean that the recited components are included, but not to exclude any other components. Further, in the specification, "on.
To further illustrate the technical means and effects of the present disclosure for achieving the intended purpose of disclosure, the following detailed description of the OLED display structure and the OLED display device according to the present disclosure with reference to the accompanying drawings and preferred embodiments will be given below.
At present, only about 20% of light of the conventional white light OLED product is emitted out of the OLED device, which greatly reduces the light extraction efficiency of the OLED device. In order to improve the light extraction rate, the light extraction surface of the OLED device may be optimized, for example, total reflection of light at the light extraction surface and an air interface is reduced; the internal structure of the OLED device can be optimized, such as by using the microcavity resonance effect.
As shown in fig. 1, the microcavity resonance effect is: when the light emitting area of the device is located in a resonant cavity formed by the total reflection film and the semi-reflection film, and the cavity length and the wavelength of the light wave are in the same order of magnitude, the light with specific wavelength can be selected and enhanced. Therefore, the light-emitting efficiency in the device can be increased by utilizing the microcavity resonance effect, so that the overall light-emitting efficiency of the OLED is improved. Of course, the occurrence of resonance in the microcavity requires the satisfaction of the relation:
where Φ represents the integration of the phase differences reflected by the reflective electrode and the transflective electrode, L represents the cavity length, and λ represents the wavelength of light.
The white OLED has a main structure composition of, for example, a bottom emission & top emission white OLED + R/G/B-CCM structure (white OLED + Color conversion material, such as one of R/G/B-CCM) shown in fig. 2 and 3, and further has a flat layer (PLN) and a glass cover plate; for the bottom emission and top emission white light OLED + R/G/B-CCM structure, in order to improve the light extraction rate of the whole structure, the embodiment respectively adds the nanometer material layers with different thicknesses below or above the R/G/B-CCM layer according to different color resistances, constructs a microcavity, and utilizes the microcavity resonance effect to improve the light emission efficiency. When the microcavity resonance effect is applied to increase the structure layer, if a spin coating film forming or curing film forming mode is adopted, the condition that the thickness of the structure layer is uneven can occur, the microcavity thickness cannot reach the required design thickness, and the light-emitting rate is not improved as expected; by adopting a self-assembly preparation mode, the preparation thickness can be controlled, the process is simple, and the structural layer with strong operability can be obtained.
As shown in fig. 4, an OLED display structure provided in one embodiment of the present disclosure includes:
a light emitting structure layer 101 for generating white light;
a nano layer 102 on the light emitting structure layer;
a color conversion layer 103 on the nanolayer;
the nano layer 102 is used for forming a micro cavity suitable for the wavelength of the color-resistant material of the color conversion layer 103 with the light emitting structure layer 101, so as to improve the light extraction rate.
Further, the light emitting structure layer 101 includes: a Cathode (Cathode), an Anode (Anode), and an OLED light emitting layer between the Cathode (Cathode) and the Anode (Anode); the microcavity is a cavity space between the OLED light emitting layer and the nano layer; the color conversion layer includes: r (red)/G (green)/B (blue) color resists or Color Conversion Media (CCM) structures.
Further, the nano layer is prepared in a self-assembly mode; the microcavity is used for selecting and enhancing light with specific wavelength by using microcavity resonance effect of the light so as to improve the light extraction rate of the OLED display structure.
Further, the self-assembly forms molecular aggregates having a specific order by intermolecular recognition, intermolecular weak interaction force (hydrogen bond, van der waals force, electrostatic force, etc.); the microcavity resonance effect is as follows: when the OLED light emitting layer or the light emitting area is positioned in a resonant cavity formed by the total reflection film and the semi-reflection film, and the cavity length and the wavelength of the light wave are in the same order of magnitude, the light with specific wavelength can be selected and enhanced.
Furthermore, the self-assembly method for preparing the monolayer film takes water as a solvent and is used for controlling the molecular level of a deposited film structure; the nano-layer material is layered silicon dioxide SiO2Layered silicon nitride (Si)3N4) (ii) a The nano layer is positioned on the joint surface between the color resistance layer and the light emitting structure layer, and the light extraction rate is improved by utilizing the microcavity resonance effect.
Further, the process for preparing the monolayer film in the self-assembly mode comprises the following steps:
preparing spherical nano silicon dioxide by using a traditional Stober method (hydrolysis method);
controlling the particle size of the silicon dioxide, and performing alternating self-assembly with polycation through an acid washing process;
forming a controlled monolayer film.
Further, the thicknesses of the nano-layers at different color resistances corresponding to the nano-layers are different; the different thicknesses of the nano layers are used for forming micro-cavities with different color resistances and different cavity lengths, so that the light-emitting rate is increased after light with different wavelengths passes through the micro-cavities with different cavity lengths and different color resistances.
Further, the thickness of the nano layer corresponding to the R color resistance is 20-300 nm; the thickness of the nano layer corresponding to the G color resistance is 20-250 nm; the thickness of the nano layer corresponding to the color resistance B is 20-200 nm.
Specifically, the self-assembly method, which is a method of preparing a material, forms a molecular aggregate having a specific order by intermolecular recognition and intermolecular weak interaction force (hydrogen bond, van der waals force, electrostatic force, etc.). The nanolayers or nanostructure layers used in this embodiment are prepared by self-assembly, wherein spherical nanosilica is prepared by conventional Stober method (hydrolysis method), the particle size of the nanosilica is controlled, and the nanosilica and polycations are self-assembled alternately under acid washing process to form a controllable monolayer, for example, as shown in fig. 5, a monolayer of spherical SiO is prepared by self-assembly2Schematic representation of microspheres.
More specifically, the self-assembly method for preparing the monolayer film has the advantages of simple process, water serving as a solvent and molecular level control of a deposited film structure. In order to improve the problem of low light extraction rate of the white OLED, the layered silicon dioxide SiO is prepared in a self-assembly mode2Layered silicon nitride (Si)3N4) The material is added below or above the color resists, the microcavity resonance effect is utilized to improve the light extraction rate, and the formed OLED display structure with the nano-layer is shown in fig. 6 and 7, wherein the thickness of the layered material for different color resists is as follows: the most suitable micro-cavity can be formed by different material thicknesses of R20-300 nm, G20-250 nm and B20-200 nm, and different colors can be formed by using the micro-cavity resonance effectAfter blocking the corresponding layered material, the light extraction rate increases.
In addition, the technologies of the driving circuit, the control circuit, and the like of the OLED display structure of this embodiment are already mature, and can be easily obtained and understood by those skilled in the art, which is not the focus of the present invention, and are not described herein again.
An embodiment of the present invention further provides a display device, including any one of the OLED display structures described above, where the display device includes: a bottom-emitting white OLED display, a top-emitting white OLED display.
For example, the OLED display structure is a key component of the display device of this embodiment, and is a core of normal display of the display device, and technologies such as a housing, a driving circuit, a control circuit, and optical quality adjustment and optimization of the display device are mature, and can be easily obtained and understood by those skilled in the art, and are not described herein again.
In the embodiment of the invention, in order to improve the light-emitting rate of the white light OLED, the layered nano-layers are respectively added on the R/G/B Color resistance or Color conversion layer material (Color conversion material) in a self-assembly mode, that is, a method for preparing a single-layer film is adopted to form micro-cavities suitable for different Color resistance materials, so that light with specific wavelength can be selected and enhanced, and the micro-cavities are used for External Quantum Efficiency (EQE) enhancement to improve the light-emitting rate of the white light OLED.
The terms "in some embodiments" and "in various embodiments" are used repeatedly. The terms generally do not refer to the same embodiment; it may also refer to the same embodiment. The terms "comprising," "having," and "including" are synonymous, unless the context dictates otherwise.
Although the present disclosure has been described with reference to specific embodiments, it will be understood by those skilled in the art that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the disclosure, and it is intended that all matter contained in the above description or shown in the accompanying drawings shall be interpreted as illustrative and not in a limiting sense.
Claims (9)
1. An OLED display structure, comprising:
a light emitting structure layer for generating white light;
a nano layer on the light emitting structure layer;
a color conversion layer on the nanolayer;
the nano layer and the light emitting structure layer form micro cavities suitable for different color resistance material wavelengths of the color conversion layer, so that the light extraction rate is improved.
2. The OLED display structure of claim 1,
the light emitting structure layer includes: a Cathode (Cathode), an Anode (Anode), and an OLED light emitting layer between the Cathode (Cathode) and the Anode (Anode);
the microcavity is a cavity space between the OLED light emitting layer and the nano layer;
the color conversion layer includes: R/G/B color resists or Color Conversion Media (CCM) constructions.
3. The OLED display structure of claim 2,
the nano layer is prepared in a self-assembly mode;
the microcavity is used for selecting and enhancing light with specific wavelength by using microcavity resonance effect of the light so as to improve the light extraction rate of the OLED display structure.
4. The OLED display structure of claim 3,
the self-assembly mode forms a molecular aggregate with a specific sequence through intermolecular recognition and intermolecular weak interaction force;
the microcavity resonance effect is as follows: when the OLED light emitting layer or the light emitting area is positioned in a resonant cavity formed by the total reflection film and the semi-reflection film, and the cavity length and the wavelength of the light wave are in the same order of magnitude, the light with specific wavelength can be selected and enhanced.
5. The OLED display structure of claim 4,
the process for preparing the monolayer film in the self-assembly mode takes water as a solvent and is used for controlling the molecular level of a deposited film structure;
the nano-layer material is layered silicon dioxide SiO2Layered silicon nitride (Si)3N4)；
The nano layer is positioned on the bonding surface between the color resistance layer and the light emitting structure layer.
6. The OLED display structure of claim 5,
the technical process for preparing the monolayer film in the self-assembly mode comprises the following steps:
preparing spherical nano silicon dioxide by a traditional hydrolysis method;
controlling the particle size of the silicon dioxide, and performing alternating self-assembly with polycation through an acid washing process;
forming a controlled monolayer film.
7. The OLED display structure of claim 6,
the thicknesses of the nano layers at different color resistances corresponding to the nano layers are different;
the different thicknesses of the nano layers are used for forming micro-cavities with different color resistances and different cavity lengths, so that the light-emitting rate is increased after light with different wavelengths passes through the micro-cavities with different cavity lengths and different color resistances.
8. The OLED display structure of claim 7,
the thickness of the nano layer corresponding to the R color resistance is 20-300 nm;
the thickness of the nano layer corresponding to the G color resistance is 20-250 nm;
the thickness of the nano layer corresponding to the color resistance B is 20-200 nm.
9. A display device comprising an OLED structure as claimed in any one of claims 1 to 7, said display device comprising:
a bottom-emitting white OLED display, a top-emitting white OLED display.
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