CN113702986B - Photoelectric detection device and method - Google Patents

Photoelectric detection device and method Download PDF

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Publication number
CN113702986B
CN113702986B CN202110968538.1A CN202110968538A CN113702986B CN 113702986 B CN113702986 B CN 113702986B CN 202110968538 A CN202110968538 A CN 202110968538A CN 113702986 B CN113702986 B CN 113702986B
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signal
amplified
electric
electrical
electrical signal
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CN113702986A (en
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洪奇
张耀
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Omron Shanghai Co Ltd
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Omron Shanghai Co Ltd
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01SRADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/02Systems using the reflection of electromagnetic waves other than radio waves
    • G01S17/06Systems determining position data of a target

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  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Geophysics And Detection Of Objects (AREA)

Abstract

The embodiment of the application provides a photoelectric detection device and a method, wherein the method comprises the following steps: receiving a first optical signal and converting the first optical signal into a first electrical signal; receiving a second optical signal and converting the second optical signal into a second electrical signal; performing switching action, changing the flow direction of the first electric signal or the second electric signal, performing amplification processing based on different combinations of the first electric signal and the second electric signal, and outputting a first amplified signal and a second amplified signal in a time-sharing manner; and detecting a position of the detected object based on the first amplified signal and the second amplified signal. According to the embodiment of the application, the cost can be reduced, and the product competitiveness can be improved.

Description

Photoelectric detection device and method
Technical Field
The application relates to the field of photoelectric detection, in particular to a photoelectric detection device and a photoelectric detection method.
Background
Currently, photoelectric sensors are widely used in various fields. One common application is to detect the position of an object to be detected using a photosensor.
For example, the background suppression type photoelectric sensor includes a light projecting section that projects a light beam toward a detection target and 2 Photodiodes (PD) packaged in parallel, and the light beam reflected by the detection target is imaged on the photodiodes. The imaging position differs according to the distance of the detected object from the photosensor, whereby the position of the detected object is detected, which may also be referred to as the principle of triangulation.
As shown in fig. 1, fig. 1 shows a schematic diagram of detecting the distance of a detection object using a background-suppressed photosensor of 2 PD. One end of the 2PD photodiode is referred to as the N (Near) side, and the other end is referred to as the F (Far) side. In the case where the object to be detected is located at a position at a set distance, as at P1 in fig. 1, the reflected light beam will be imaged at the intermediate point of the N side and the F side, and the diodes on both sides will receive the same amount of light, at which time the difference between the signal of the amount of light received by the N side PD and the signal of the amount of light received by the F side PD, i.e., the N-F signal is 0. Further, in a case where the object to be detected is located at a position closer to the photosensor with respect to the set distance, as at P2 in fig. 1, the reflected light beam will be imaged on the N side, that is, the N side PD receives a larger amount of light than the F side PD. In contrast, in the case where the object to be detected is located at a distant position with respect to the set distance, as at P3 in fig. 1, the reflected light beam will be imaged on the F side, i.e., the N side PD receives a smaller amount of light than the F side PD. Thus, the photoelectric sensor can determine the position of the detection object by calculating the difference between the light receiving amounts on the N side and the F side. Based on this detection method, the influence of the surface state/color of the object to be detected has little influence on the detection accuracy, and the detection accuracy is also less susceptible to the influence of the background object.
In the existing detection mode, when the N-F signal is smaller than a preset threshold value at a set distance, the detected object is judged to be at the set distance, but the preset threshold value is usually very small and is influenced by structural deviation, the N-F signal is unstable, and output tremble is caused when the N-F signal fluctuates too much. Therefore, it is generally necessary to judge the sum of the signal of the N-side PD reception light amount and the signal of the F-side PD reception light amount at the same time, that is, the n+f signal as an auxiliary signal, to avoid the fluctuation of the N-F signal due to the structural deviation.
In the conventional structure, the background-suppressed photoelectric sensor uses 2PD as a light receiving component, so that existing hardware designs use two sets of amplifying circuits to amplify an N-F signal and an n+f signal respectively, as shown in fig. 2, the amplifying circuits of the N-F signal include a difference signal amplifying circuit, a2 nd amplifying circuit and a peripheral circuit, the amplifying circuits of the n+f signal include a sum signal amplifying circuit, a2 nd amplifying circuit and a peripheral circuit, and the amplified N-F signal and the amplified n+f signal are input into a processing part (such as a micro control unit MCU or a logic circuit) to determine the position of a detected object.
It should be noted that the foregoing description of the background art is only for the purpose of providing a clear and complete description of the technical solution of the present application and is presented for the convenience of understanding by those skilled in the art. The above-described solutions are not considered to be known to the person skilled in the art simply because they are set forth in the background of the application section.
Disclosure of Invention
However, the inventor finds that, because the existing scheme uses two sets of amplifying circuits, the cost is high, and in addition, the wiring space of the substrate is also relatively tension, the shielding area is increased, and the optimization of the product structure is restricted.
The embodiment of the application provides a photoelectric detection device and a photoelectric detection method, wherein a switching part performs switching action to change the flow direction of a first electric signal or a second electric signal, a signal amplifying circuit performs amplifying processing based on different combinations of the first electric signal and the second electric signal and outputs a first amplifying signal and a second amplifying signal in a time-sharing manner, so that the first amplifying signal and the second amplifying signal which are output in the time-sharing manner can be used for determining the position of a detected object through the same set of signal amplifying circuit. Can reduce the cost and increase the competitiveness of the product.
According to a first aspect of an embodiment of the present application, there is provided a photodetection device including:
a first light receiving unit that converts a received first optical signal into a first electrical signal;
a second light receiving unit that converts the received second optical signal into a second electrical signal;
A signal amplifying circuit that performs amplification processing based on different combinations of the first electric signal and the second electric signal, and outputs a first amplified signal and a second amplified signal in a time-sharing manner;
a switching unit that performs a switching operation to change a flow direction of the first electrical signal or the second electrical signal, and to change a signal combination of the amplification processing performed by the signal amplification circuit; and
And a processing unit that controls the switching unit to perform the switching operation, and that receives the first amplified signal and the second amplified signal and detects a position of the detection target based on the first amplified signal and the second amplified signal.
In one or more embodiments, the first amplified signal is an amplified signal of a sum of the first electrical signal and the second electrical signal, the second amplified signal is an amplified signal of a difference between the first electrical signal and the second electrical signal;
The switching part is a single-pole double-throw electronic switch, when the electronic switch is in a first conduction state, the signal amplifying circuit amplifies the sum of the first electric signal and the second electric signal and outputs an amplified signal of the sum of the first electric signal and the second electric signal, and when the single-pole double-throw electronic switch is in a second conduction state, the signal amplifying circuit amplifies the difference between the first electric signal and the second electric signal and outputs an amplified signal of the difference between the first electric signal and the second electric signal.
In one or more embodiments, the first amplified signal is an amplified signal of the first electrical signal or an amplified signal of the second electrical signal, the second amplified signal being an amplified signal of a difference between the first electrical signal and the second electrical signal;
The switching part is an NMOS tube, when the NMOS tube is in a conducting state, the signal amplifying circuit amplifies the first electric signal or the second electric signal and outputs the amplified signal of the first electric signal or the amplified signal of the second electric signal, and when the NMOS tube is in a cut-off state, the signal amplifying circuit amplifies the difference between the first electric signal and the second electric signal and outputs the amplified signal of the difference between the first electric signal and the second electric signal.
In one or more embodiments, the processing section converts the first amplified signal into an analog amplified signal that is an analog of a sum of the first electrical signal and the second electrical signal, and detects the position of the object to be detected from the analog amplified signal and the second amplified signal.
In one or more embodiments, the first light receiving portion includes:
a first light receiving element that converts the first optical signal into a first current signal; and
A first current/voltage conversion circuit that converts the first current signal into a first voltage signal as the first electrical signal,
The second light receiving unit includes:
a second light receiving element that converts the second optical signal into a second current signal; and
A second current/voltage conversion circuit that converts the second current signal into a second voltage signal as the second electrical signal.
In one or more embodiments, the first current/voltage conversion circuit and the second current/voltage conversion circuit include anti-saturation circuits.
In one or more embodiments, the photodetection device further comprises a light emitting section that emits a pulsed light signal, irradiates the object to be detected,
The processing unit controls the switching operation of the switching unit according to the timing of the pulse light signal.
According to a second aspect of an embodiment of the present application, there is provided a photodetection method including:
receiving a first optical signal and converting the first optical signal into a first electrical signal;
receiving a second optical signal and converting the second optical signal into a second electrical signal;
Performing switching action, changing the flow direction of the first electric signal or the second electric signal, performing amplification processing based on different combinations of the first electric signal and the second electric signal, and outputting a first amplified signal and a second amplified signal in a time-sharing manner; and
And detecting the position of the detected object according to the first amplified signal and the second amplified signal.
In one or more embodiments, the method further comprises: and controlling the switching operation according to the time sequence of the pulse light signal irradiating the detected object.
The embodiment of the application has the beneficial effects that: the switching part performs switching operation to change the flow direction of the first electric signal or the second electric signal, the signal amplifying circuit performs amplifying processing based on different combinations of the first electric signal and the second electric signal, and the first amplifying signal and the second amplifying signal are output in a time-sharing manner, so that the position of the detected object can be determined by the first amplifying signal and the second amplifying signal which are output in the time-sharing manner when the same set of signal amplifying circuit performs amplifying processing on different combinations of the first electric signal and the second electric signal. Can reduce the cost and increase the competitiveness of the product.
Specific embodiments of the application are disclosed in detail below with reference to the following description and drawings, indicating the manner in which the principles of the application may be employed. It should be understood that the embodiments of the application are not limited in scope thereby. The embodiments of the application include many variations, modifications and equivalents within the spirit and scope of the appended claims.
The feature information described and illustrated with respect to one embodiment may be used in the same or similar manner in one or more other embodiments in combination with or instead of the feature information in other embodiments.
It should be emphasized that the term "comprises/comprising" when used herein is taken to specify the presence of stated features, integers, steps or components but does not preclude the presence or addition of one or more other features, integers, steps or components.
Drawings
Many aspects of the application can be better understood with reference to the following drawings. The components in the figures are not necessarily to scale, emphasis instead being placed upon illustrating the principles of the application. Corresponding parts in the drawings may be exaggerated or reduced in order to facilitate the illustration and description of some parts of the present application. The elements and feature information described in one drawing or embodiment of the application may be combined with the elements and feature information shown in one or more other drawings or embodiments. Furthermore, in the drawings, like reference numerals designate corresponding parts throughout the several views, and may be used to designate corresponding parts as used in more than one embodiment.
In the drawings:
FIG. 1 is a schematic diagram of a background-suppressed photosensor detecting the distance of a detected object;
FIG. 2 is a schematic diagram of a photo-detection device comprising two sets of signal amplification circuits;
FIG. 3 is a schematic view of a photodetection device according to an embodiment of the first aspect of the present application;
FIG. 4 is a circuit configuration diagram of a photodetection device according to an embodiment of the first aspect of the present application;
FIG. 5 is another circuit configuration diagram of a photodetection device according to an embodiment of the first aspect of the present application;
FIG. 6 is a schematic diagram of a current to voltage conversion circuit including an anti-saturation circuit according to an embodiment of the first aspect of the present application;
FIG. 7 is a schematic diagram of a simulation of the anti-saturation condition of the anti-saturation circuit of the embodiment of the first aspect of the present application;
FIG. 8 is a flow chart of the control actions of the MCU according to the embodiment of the first aspect of the application;
fig. 9 is a schematic diagram of a photodetection method according to an embodiment of the second aspect of the present application.
Detailed Description
Preferred embodiments of the present application will be described below with reference to the accompanying drawings.
Example of the first aspect
Embodiments of the first aspect of the present application provide a photodetection device.
Fig. 3 is a schematic view of a photodetection device according to an embodiment of the first aspect of the present application. As shown in fig. 3, the photodetection device 10 includes:
A first light receiving unit 100 that converts a received first optical signal into a first electrical signal;
a second light receiving unit 200 that converts the received second optical signal into a second electrical signal;
A signal amplifying circuit 300 that performs amplification processing based on different combinations of the first electric signal and the second electric signal, and outputs the first amplified signal and the second amplified signal in a time-sharing manner;
A switching unit 400 that performs a switching operation to change the flow direction of the first electrical signal or the second electrical signal, and to change the signal combination to be amplified by the signal amplification circuit 300; and
And a processing unit 500 that controls the switching unit 400 to perform a switching operation, and the processing unit 500 receives the first amplified signal and the second amplified signal and detects the position of the detection target based on the first amplified signal and the second amplified signal.
In the embodiment of the present application, the first light receiving unit 100 and the second light receiving unit 200 may be two photosensors that are juxtaposed among the photosensors with background suppression, and may be referred to as N-side PD and F-side PD, and hereinafter, the description will be given taking the example in which the first light receiving unit 100 corresponds to the N-side PD and the second light receiving unit 200 corresponds to the F-side PD, and accordingly, the description will be given taking the example in which the first electrical signal is represented by n_pd and the second electrical signal is represented by f_pd.
In the embodiment of the present application, the signal amplifying circuit 300 may include two amplifying circuits connected in series and a peripheral circuit, the amplifying circuits may include an operational amplifier or a power amplifier, and the two amplifying circuits connected in series may be referred to as a first-stage amplifying circuit and a second-stage amplifying circuit, and reference may be made to the related art, but the present application is not limited thereto, and may have only a first-stage amplifying circuit, for example, or may include a 3-stage amplifying circuit, which is not limited thereto. The following section of the present application is described with the signal amplifying circuit 300 including a 2-stage amplifying circuit.
In an embodiment of the present application, the signal amplifying circuit 300 may perform the amplifying process based on different combinations of the first electrical signal and the second electrical signal, where the different combinations may be a sum of the first electrical signal and the second electrical signal, or a difference between the first electrical signal and the second electrical signal, or include only the first electrical signal, or include only the second electrical signal. Wherein one of the first amplified signal and the second amplified signal is an amplified signal of a difference between the first electrical signal and the second electrical signal, and the other of the first amplified signal and the second amplified signal may be an amplified signal of a sum of the first electrical signal and the second electrical signal, or an amplified signal of the first electrical signal, or an amplified signal of the second electrical signal.
In the embodiment of the present application, the switching unit 400 may change the flow direction of the first electrical signal or the second electrical signal through a switching operation, for example, when the switching unit 400 is disposed on a line where the first electrical signal is located, the switching unit 400 may perform a switching operation to enable the first electrical signal to be combined with the second electrical signal, so that the first electrical signal and the second electrical signal are input into the signal amplifying circuit 300 in the form of a sum, or the switching unit 400 may perform a switching operation to enable the first electrical signal and the second electrical signal to be input into the signal amplifying circuit 300 in the form of a difference therebetween, or the switching unit 400 may perform a switching operation to enable the first electrical signal to be grounded, and the second electrical signal to be input into the signal amplifying circuit. When the switching unit 400 is disposed on the line on which the second electric signal is disposed, the switching unit 400 may change the flow direction of the second electric signal by switching operation, so that the first electric signal and the second electric signal are input to the signal amplifying circuit 300 in the form of a sum, or the switching unit 400 may perform switching operation so that the first electric signal and the second electric signal are input to the signal amplifying circuit 300 in the form of a difference therebetween, or the switching unit 400 may perform switching operation so that the second electric signal is grounded, and the first electric signal is input to the signal amplifying circuit 300.
In the embodiment of the present application, the processing unit 500 may be implemented in various manners, for example, may be a micro control unit MCU, but is not limited thereto, and may be, for example, a logic array. Unless otherwise specified, an example of the processing unit 500 will be described below using an MCU.
In order to realize that two sets of signal amplifying circuits are used for amplifying an N_PD-F_PD signal and an N_PD+F_PD signal respectively, or the MCU with one set of signal amplifying circuit is replaced by the MCU with two sets of signal amplifying circuits, the cost of the MCU is greatly increased, or another set of signal amplifying circuit is arranged outside the MCU with one set of signal amplifying circuit on a substrate, on one hand, the space of the substrate is very limited, the structural design needs to be greatly changed, and on the other hand, the cost is higher due to the fact that the two sets of signal amplifying circuits are used.
In the present application, the switching unit performs the switching operation to change the flow direction of the first electric signal or the second electric signal, and the signal amplifying circuit performs the amplifying process based on different combinations of the first electric signal and the second electric signal, and outputs the first amplified signal and the second amplified signal in a time-sharing manner. Two sets of signal amplifying circuits are not needed, the space of the substrate is saved, the cost can be reduced, and the product competitiveness is improved.
In an embodiment of the present application, the switching portion 400 may be implemented by using various components, for example, the switching portion 400 may include an electronic switch, an N-type Metal-Oxide-Semiconductor (NMOS) tube, and the like.
The case where the switching section 400 includes an electronic switch and an NMOS transistor is exemplified below, respectively.
Fig. 4 is another schematic diagram of the photodetection device according to the embodiment of the first aspect of the present application, showing a case where the switching section 400 includes a single pole double throw electronic switch.
As shown in fig. 4, the switching unit 400 includes a single-pole double-throw electronic switch and a control unit for controlling a switching direction, the control unit may be, for example, a logic structure formed by a plurality of electronic components, the logic structure and a movable end and a stationary end of the electronic switch may form an integrated circuit, when the electronic switch is in a first conductive state, that is, a knife s and a stationary end s1 are turned on, a sum of the first electrical signal and the second electrical signal is input to the operational amplifier U1 through a "-" end of the operational amplifier U1, the signal amplifying circuit 300 amplifies the sum of the first electrical signal and the second electrical signal, outputs an amplified signal of the sum of the first electrical signal and the second electrical signal, and when the single-pole double-throw electronic switch is in a second conductive state, that is, a knife s and a stationary end s2 are turned on, the first electrical signal and the second electrical signal are connected to a "+" end and a "-" end of the operational amplifier U1, respectively, and the signal amplifying circuit 300 amplifies a difference between the first electrical signal and the second electrical signal, and outputs an amplified signal of the difference between the first electrical signal and the second electrical signal. That is, the first amplified signal is an amplified signal of the sum of the first electrical signal and the second electrical signal, and the second amplified signal is an amplified signal of the difference between the first electrical signal and the second electrical signal.
In the embodiment of the present application, the processing part 500 is connected to the control input terminal of the switching part 400, the processing part 500 outputs a switching command to the switching part 400 through the control output port p1.0_out, and the switching part 400 switches the flow direction of the first electrical signal according to the received switching command, that is, as shown in fig. 4, the switching part 400 controls the flow direction of the first electrical signal n_pd corresponding to the N side PD, but the present application is not limited thereto, and for example, when the switching part 400 is disposed in a circuit where the F side PD is located, the switching part 400 may control the flow direction of the second electrical signal f_pd corresponding to the F side PD.
Fig. 4 shows a case where the switching section 400 includes a single pole double throw electronic switch, but the present application is not limited thereto, and for example, two single pole single throw switches may be used instead of a single pole double throw switch to realize the function of the switching section 400.
In the embodiment of the application, the applicant finds that when the detected object is at the set distance, the n_pd-f_pd signal is far smaller than the n_pd+f_pd signal, because a set of signal amplifying circuits is shared, the same signal amplifying gain is obtained, and if the gain of the n_pd-f_pd can reach the value required for judgment, the n_pd+f_pd signal is far more than the required signal quantity. The strength of the n_pd+f_pd signal can be appropriately reduced.
The applicant has further analyzed that when the object being detected is at a set distance, the f_pd signal and the n_pd signal are equal, when the object being detected is at a position away from the set distance, the f_pd signal will be slightly greater than the n_pd signal, and when the object being detected is in proximity to the photosensor, the f_pd signal will be less than the n_pd signal. Thus, the f_pd signal may be used to simulate an n_pd+f_pd signal, e.g., the MCU transforms the acquired f_pd signal to simulate an n_pd+f_pd signal without the need for an n_pd or n_pd+f_pd signal to assist in the determination.
Fig. 5 is a schematic diagram of a photodetection device according to an embodiment of the first aspect of the present application, and shows a case where the switching section 400 includes an NMOS transistor TR.
As shown in fig. 5, the switching unit 400 includes an NMOS transistor TR, and when the NMOS transistor TR is in an on state, the signal amplifying circuit 300 amplifies the first electric signal or the second electric signal, outputs the amplified signal of the first electric signal or the amplified signal of the second electric signal, and when the NMOS transistor TR is in an off state, the signal amplifying circuit 300 amplifies a difference n_pd-f_pd between the first electric signal and the second electric signal, and outputs the amplified signal of the difference n_pd-f_pd between the first electric signal and the second electric signal. That is, the first amplified signal is an amplified signal of the first electrical signal or an amplified signal of the second electrical signal, and the second amplified signal is an amplified signal of a difference between the first electrical signal and the second electrical signal.
Fig. 5 shows a case where the NMOS transistor TR is disposed on a line where the N-side PD is located, the D pole of the NMOS transistor TR is connected to the n_pd, the S pole is shorted to the ground, the G pole is connected in series with a small resistor and then connected to the control output port p1.0_out of the MCU, in the example shown in fig. 5, the first amplified signal is an amplified signal of the f_pd signal, the MCU may convert the amplified signal of the f_pd into an amplified signal of the analog n_pd+f_pd as an analog amplified signal, and the MCU detects the position of the detected object according to the analog amplified signal and the second amplified signal. However, the present application is not limited thereto, and the NMOS transistor TR may be disposed on the line where the PD on the F side is located, that is, the n_pd signal may be used to simulate the n_pd+f_pd signal, without the need for the f_pd or the n_pd+f_pd signal to assist in the determination. The application is not limited in this regard.
Therefore, by arranging the low-cost switching part, the first amplified signal and the second amplified signal can be obtained without arranging two sets of signal amplifying circuits, so that the circuit is simpler and has low cost.
In one or more embodiments, as shown in fig. 3, the first light receiving portion 100 includes a first light receiving element 101 and a first current/voltage conversion circuit 102, the first light receiving element 101 converts a first light signal into a first current signal, the first current/voltage conversion circuit 102 converts the first current signal into a first voltage signal as a first electrical signal, the second light receiving portion 200 includes a second light receiving element 201 and a second current/voltage conversion circuit 202, the second light receiving element 201 converts a second light signal into a second current signal, and the second current/voltage conversion circuit 202 converts the second current signal into a second voltage signal as a second electrical signal. Thus, the first current/voltage conversion circuit 102 and the second current/voltage conversion circuit 202 can convert the desired electric signal format.
In one or more embodiments, the first current-to-voltage conversion circuit 102 and the second current-to-voltage conversion circuit 202 include anti-saturation circuits. The signal growth under the close distance is realized to present logarithmic characteristics, so that the unsaturation of a conversion circuit is ensured, the detection distance of the photoelectric detection device can be increased, and the photoelectric detection device can be suitable for more scenes.
The applicant found that, when the first light receiving element 101 and the second light receiving element 102 receive light pulses as light signals, the signal loss phenomenon occurs when the circuit in the photoelectric detection device does not release the energy generated by the last light pulse signal below a threshold level when receiving the next light pulse signal when the detected object is close to the photoelectric detection device due to the large signal energy.
In the present application, the applicant found that there are contradictory places when performing I/V conversion: in order to obtain a farther detection distance of the photoelectric sensor, a higher transimpedance gain needs to be set, namely, the larger the sampling resistance is, the better the sampling resistance is; however, since the sampled n_pd and f_pd signals are to be subtracted, if the transimpedance gain is very large, when the detected object is close to the photosensor, the signals of n_pd and f_pd are saturated, and the subtracting circuit outputs 0, which is consistent with the detection result in the scene where the far-end detected object is not detected, resulting in false detection.
In the embodiment of the application, the anti-saturation circuit is arranged in the circuit at the front end of the signal amplifying circuit, so that the signal can be increased and logarithmic characteristics can be displayed in a short distance, and the signal unsaturation can be ensured.
Fig. 6 is a schematic diagram of a current to voltage conversion circuit including an anti-saturation circuit.
As shown in fig. 6, R1 and R2 are transimpedance conversion base resistors, R3 and R4 are saturated sampling resistors, (r1+r2)// Rceq is a transimpedance overall resistor, that is, a parallel resistor of (r1+r2) and Rcep is a transimpedance overall resistor, wherein Rceq is a triode dynamic equivalent CE junction resistor, rceq =Δuce/Δil2, Δuce is a voltage across the triode dynamic equivalent CE junction, IL2 is a current flowing through the triode, and the voltage Δuce is divided by the current Δil2 to form an equivalent resistor Rceq.
According to the configuration shown in fig. 6, the anti-saturation circuits in the first current/voltage conversion circuit and the second current/voltage conversion circuit are the same, and an n_pd signal is taken as an example for explanation.
When the detected object is far from the photoelectric sensor, the incident light amount is very small, and after IL1 flows through R3, the on voltage of the triode TR1 cannot be reached, and the I/V transimpedance voltage V N _pd=il1 (r1+r3) is the same as when no anti-saturation circuit is set.
When the detected object is close to the photoelectric sensor, when the voltage of IL1 flowing through R3 generated by light entering quantity reaches the starting voltage of the triode TR1, the I/V transimpedance voltage V N _PD= (IL 1+IL 2)/(R1 +R3)/Rceq, when the triode is slightly started, the equivalent CE junction resistor of the triode is connected in parallel with the base resistor R1, and the integral resistance value of the I/V converting resistor is reduced, so that V N _PD cannot reach saturation. Similarly, V F _pd cannot reach saturation in this case.
In the embodiment of the application, the dynamic equivalent CE junction resistance of the triode is determined by the switching current of the photoelectric sensor PD.
In the embodiment of the present application, transistors TR1 and TR2 are described as an example of the anti-saturation member as shown in fig. 6, but the present application is not limited thereto, and other anti-saturation techniques may be used in the present application.
The following is a simulation comparison between the case where the anti-saturation circuit is provided and the case where the anti-saturation circuit is not provided.
TABLE 1
In the simulation, the saturated sampling resistor is set to be 30kΩ, and the transimpedance conversion base resistor is set to be 170kΩ, wherein I1 is the output current after photoelectric conversion.
Fig. 7 is a schematic diagram of a simulation of the anti-saturation condition of the anti-saturation circuit according to the embodiment of the first aspect of the present application.
From the simulation results of table 1 and fig. 7, it can be seen that when the signal current exceeds 20uA, the anti-saturation circuit is completely started (as shown by L1 in fig. 7), and the transimpedance gain can be greatly reduced. When 2mA strong signal light is input, the trans-resistance gain is inhibited to 31.4db, and the anti-saturation effect is obvious. In the whole current variation range, the output voltage of the I/V conversion circuit provided with the anti-saturation circuit only needs to keep continuous monotonicity.
When the signal current is less than 20uA, the I/V output voltage and the photocurrent signal exhibit a substantially linear relationship (as shown by L1 and L2 in FIG. 7). Under the same conditions, although effective signals are lost when the anti-saturation circuit is arranged, the amplification factor of the signal amplifying circuit at the later stage can be adjusted in a micro-scale way, and the accuracy of the detection result is not affected.
In the embodiment of the application, the specific values of the saturated sampling resistor and the transimpedance conversion base resistor are not limited, and can be determined according to the magnitude of the power supply voltage and/or the required anti-saturation capacity, for example, when the required anti-saturation capacity is stronger, the resistance value of the saturated sampling resistor can be increased, and smaller saturated starting current can be realized to obtain stronger anti-saturation capacity, otherwise, the saturated sampling resistor with smaller resistance value can be adopted.
Therefore, the photoelectric detection device of the embodiment of the application can be applied to various background inhibition products of large, medium and small types, and in addition, the anti-saturation circuit of the embodiment of the application can also be applied to a correlation type photoelectric detection device, so that high-speed detection can be realized.
In one or more embodiments, the photodetection device 10 further includes a light emitting portion (not shown in the figure) that emits a pulsed light signal to irradiate the object to be detected, and the processing portion 500 controls the switching operation of the switching portion 400 according to the timing of the pulsed light signal. Thereby, accuracy of data acquisition can be ensured.
In the embodiment of the application, the light emitting part can periodically send the pulse light signal, for example, the light emitting part can be controlled by the MCU to send the pulse light signal. In the case where the light emitting section transmits a series of light pulses, taking the photodetection device shown in fig. 4 as an example, the MCU uses the following timing control switching section 400:
During the non-light-projecting period and during the even-numbered light-projecting period, the circuit is in subtractive connection, i.e., the knife s and the stationary terminal s2 are on, the signal amplifying circuit 300 outputs an amplified signal of the difference between the first electrical signal and the second electrical signal,
In the embodiment of the application, the preset time is advanced to ensure that the circuit reaches a stable state before the light projection signal is emitted, and the preset time can be 2us, but is not limited to the preset time and can be other values. After the light projection signal is transmitted, the switching part 400 finishes state switching, N_PD and F_PD are simultaneously input to the negative end of the U1 to form a reverse addition circuit, after the signal is amplified, the MCU obtains an amplified signal of the sum of the N_PD and the F_PD, after sampling and conversion, the MCU outputs another control instruction, so that the switching part 400 performs state switching, and the N_PD is reconnected to the positive end of the U1.
When the next even numbered pulse (e.g., the second pulse) arrives at the timing, the switching unit 400 does not need to perform any conversion, the circuit is configured as a subtracting circuit, and the MCU can obtain the n_pd-f_pd signal without any signal switching.
Fig. 8 is a flowchart of the control operation of the MCU according to the embodiment of the first aspect of the present application.
As shown in fig. 8, the MCU control performs the following actions:
S801, the MCU instructs the light emitting section to perform periodic light pulse emission,
S802, the light emitting part emits periodic light pulse,
S803, the MCU judges the light pulse number, and when judging that the pulses are odd number times, S804 is performed, otherwise S810 is performed,
S804, the MCU controls the switching section to switch the signal amplifying circuit to the adding circuit, even if the first electric signal and the second electric signal are inputted to the signal amplifying circuit in the form of a sum,
S805, the MCU obtains the addition data, namely obtaining the amplified signal of the sum of the first electric signal and the second electric signal,
In this embodiment, in S805, the MCU may further perform a digital filtering operation after acquiring the addition data, that is, sampling and AD converting the acquired addition data,
S806, the MCU compares the processed addition data with an addition threshold,
In the embodiment of the application, after the preset number of addition data are obtained, the average value of the addition data is calculated, and the average value and the addition threshold value are used for comparison to improve the detection accuracy,
S807, determining whether the addition data is greater than an addition threshold, and if so, executing S808, otherwise executing S809,
S808, the addition flag is set to 1,
S809, clearing the addition mark,
S810, obtaining subtraction data, namely obtaining an amplified signal of the difference between the first electric signal and the second electric signal,
In this embodiment, in S810, the MCU may further perform a digital filtering operation after acquiring the subtraction data, that is, a sampling and AD conversion operation on the acquired subtraction data,
S811, the MCU compares the processed subtraction data with a subtraction threshold value,
In the embodiment of the application, after the preset number of the subtraction data are obtained, the average value of the plurality of the subtraction data is calculated, and the average value and the subtraction threshold value are used for comparison to improve the detection accuracy,
S812, determining whether the subtraction data is greater than the subtraction threshold value, if so, executing S813, otherwise executing S814,
S813, setting a subtraction flag to 1,
S814, clearing the subtraction flag,
S815, determining the position of the detected object by combining the results of S808, S809, S813, and S814,
In S815, when the addition flag and the subtraction flag are both 1, it may be determined that the detected object is within the set distance of the photoelectric sensor, that is, within the detection range, or else it is determined that the detected object is outside the set distance of the photoelectric sensor, that is, not within the detection range of the photoelectric sensor,
S816, storing the judging result,
S817, other treatments, such as dormancy, turning off the photodetection device, or photodetection again.
In the embodiment of the present application, the light pulse emission period of the light emitting portion may be adjusted, for example, halved, whereby the detection time (which may also be referred to as response time) required for the photodetection device is not prolonged even if the addition data and the subtraction data are acquired in a time-sharing manner.
In the embodiment of the application, after receiving the addition data and the subtraction data, the MCU or the logic circuit can sample and AD convert the addition data and the subtraction data at the same time, and perform logic operation on the converted data, and can also sample and AD convert the converted data successively according to the acquired data. The above-described process may be performed a plurality of times, for example, 4 times, for example, but not limited thereto, and may be performed 2 times, 3 times, more than 4 times, or the like, for example.
In the embodiment of the application, the subtracting circuit belongs to a differential circuit from the circuit constitution, so that the suppression of interference signals, particularly common-mode interference, is greatly superior to that of a single-ended amplifying circuit. Therefore, in the long time of even number of light projection and non-light projection, the circuit is in a subtracting circuit forming state, the sensitivity to interference is reduced, and the circuit system can obtain additional anti-interference advantages.
However, the present application is not limited to this, and for example, the addition data may be acquired during a non-light-projecting period and during an even-number-of-light-projecting period, and the subtraction data may be acquired during an odd-number-of-light-projecting period.
In the case where the light emitting section transmits a series of light pulses, the time of n (n is a natural number of 2 or more) light pulse signals may be used as the switching period of the addition circuit and the subtraction circuit, that is, the subtraction data or the addition data may be acquired during the first n light pulse light emission periods, and the addition data or the subtraction data may be acquired during the subsequent n light pulse light emission periods. This reduces the number of switching operations of the switching unit. The selection may be made according to the actual detection scene (e.g., the moving speed, direction, etc. of the detected object).
As is apparent from the above embodiments, the switching section performs the switching operation to change the flow direction of the first electrical signal or the second electrical signal, and the signal amplifying circuit performs the amplifying process based on different combinations of the first electrical signal and the second electrical signal, and outputs the first amplified signal and the second amplified signal in a time-sharing manner, so that the position of the detected object can be determined by performing the amplifying process on different combinations of the first electrical signal and the second electrical signal by the same set of signal amplifying circuits. Can reduce the cost and increase the competitiveness of the product.
Embodiments of the second aspect
An embodiment of the present application provides a photodetection method, which corresponds to the photodetection device described in embodiment 1.
Fig. 9 is a schematic diagram of a photodetection method according to an embodiment of the second aspect of the present application. As shown in fig. 9, the method includes:
Step 901: receiving a first optical signal and converting the first optical signal into a first electrical signal, receiving a second optical signal and converting the second optical signal into a second electrical signal
Step 902: performing switching action, changing the flow direction of the first electric signal or the second electric signal, performing amplification processing based on different combinations of the first electric signal and the second electric signal, and outputting a first amplified signal and a second amplified signal in a time-sharing manner; and
Step 903: the position of the detected object is detected based on the first amplified signal and the second amplified signal.
In one or more embodiments, the method further comprises the steps of:
the switching operation is controlled according to the time sequence of the pulse light signal irradiating the detected object.
The specific implementation method of the above steps is the same as that described in the embodiment of the first aspect, and the description thereof will not be repeated here.
As is apparent from the above embodiments, the switching section performs the switching operation to change the flow direction of the first electrical signal or the second electrical signal, and the signal amplifying circuit performs the amplifying process based on different combinations of the first electrical signal and the second electrical signal, and outputs the first amplified signal and the second amplified signal in a time-sharing manner, so that the position of the detected object can be determined by performing the amplifying process on different combinations of the first electrical signal and the second electrical signal by the same set of signal amplifying circuits. Can reduce the cost and increase the competitiveness of the product.
The above apparatus and method of the present application may be implemented by hardware, or may be implemented by hardware in combination with software. The present application relates to a computer-readable program which, when executed by a logic means, enables the logic means to implement the above means or constituent elements, or enables the logic means to implement the above various methods or steps.
The present application also relates to a storage medium such as a hard disk, a magnetic disk, an optical disk, a DVD, a flash memory, or the like for storing the above program.
While the application has been described in connection with specific embodiments, it will be apparent to those skilled in the art that the description is intended to be illustrative and not limiting in scope. Various modifications and alterations of this application will occur to those skilled in the art in light of the spirit and principles of this application, and such modifications and alterations are also within the scope of this application.

Claims (5)

1. A photodetection device, characterized in that the photodetection device comprises:
a light emitting unit that emits a pulse light signal and irradiates a subject to be detected;
a first light receiving unit that converts a received first optical signal into a first electrical signal;
a second light receiving unit that converts the received second optical signal into a second electrical signal;
a set of signal amplifying circuit which performs amplification processing based on different combinations of the first electric signal and the second electric signal and outputs a first amplified signal and a second amplified signal in a time-sharing manner;
A switching part which is a single-pole double-throw electronic switch or an NMOS tube, wherein the switching part performs switching operation to change the flow direction of the first electric signal or the second electric signal and change the signal combination of the amplification processing of the set of signal amplification circuits; and
A processing section that controls the switching section to perform the switching operation in accordance with the odd-even timing of the pulsed light signal, and that receives the first amplified signal and the second amplified signal, detects a position of a detection object in accordance with the first amplified signal and the second amplified signal,
When the switching part is a single-pole double-throw electronic switch, the first amplified signal is the amplified signal of the sum of the first electric signal and the second electric signal, the second amplified signal is the amplified signal of the difference between the first electric signal and the second electric signal, when the electronic switch is in a first conduction state, the set of signal amplifying circuits amplify the sum of the first electric signal and the second electric signal and output the amplified signal of the sum of the first electric signal and the second electric signal, when the single-pole double-throw electronic switch is in a second conduction state, the set of signal amplifying circuits amplify the difference between the first electric signal and the second electric signal and output the amplified signal of the difference between the first electric signal and the second electric signal,
When the switching unit is an NMOS transistor, the first amplified signal is an amplified signal of the first electrical signal or an amplified signal of the second electrical signal, the second amplified signal is an amplified signal of a difference between the first electrical signal and the second electrical signal, when the NMOS transistor is in an on state, the signal amplifying circuit amplifies the first electrical signal or the second electrical signal, outputs the amplified signal of the first electrical signal or the amplified signal of the second electrical signal, and when the NMOS transistor is in an off state, the signal amplifying circuit amplifies the difference between the first electrical signal and the second electrical signal, and outputs the amplified signal of the difference between the first electrical signal and the second electrical signal.
2. The photodetection device according to claim 1, wherein
The processing unit converts the first amplified signal into an analog amplified signal that is an analog of a sum of the first electrical signal and the second electrical signal, and detects a position of the detection target based on the analog amplified signal and the second amplified signal.
3. The photodetection device according to claim 1, wherein,
The first light receiving unit includes:
a first light receiving element that converts the first optical signal into a first current signal; and
A first current/voltage conversion circuit that converts the first current signal into a first voltage signal as the first electrical signal,
The second light receiving unit includes:
a second light receiving element that converts the second optical signal into a second current signal; and
A second current/voltage conversion circuit that converts the second current signal into a second voltage signal as the second electrical signal.
4. The photodetection device according to claim 3, wherein,
The first current/voltage conversion circuit and the second current/voltage conversion circuit include anti-saturation circuits.
5. A method of photodetection, the method comprising:
emitting a pulse light signal to irradiate the detected object;
receiving a first optical signal and converting the first optical signal into a first electrical signal, and receiving a second optical signal and converting the second optical signal into a second electrical signal;
The switching part is used for performing switching action, the switching part is controlled to perform the switching action according to the odd-even time sequence of the pulse optical signal, the flow direction of the first electric signal or the second electric signal is changed, a set of signal amplifying circuit is used for amplifying based on different combinations of the first electric signal and the second electric signal, a first amplifying signal and a second amplifying signal are output in a time-sharing way, and the switching part is a single-pole double-throw electronic switch or an NMOS tube; and
Detecting the position of the detected object based on the first amplified signal and the second amplified signal,
When the switching part is a single-pole double-throw electronic switch, the first amplified signal is the amplified signal of the sum of the first electric signal and the second electric signal, the second amplified signal is the amplified signal of the difference between the first electric signal and the second electric signal, when the single-pole double-throw electronic switch is in a first conduction state, the set of signal amplifying circuits amplifies the sum of the first electric signal and the second electric signal and outputs the amplified signal of the sum of the first electric signal and the second electric signal, when the single-pole double-throw electronic switch is in a second conduction state, the set of signal amplifying circuits amplifies the difference between the first electric signal and the second electric signal and outputs the amplified signal of the difference between the first electric signal and the second electric signal,
When the switching unit is an NMOS transistor, the first amplified signal is an amplified signal of the first electrical signal or an amplified signal of the second electrical signal, the second amplified signal is an amplified signal of a difference between the first electrical signal and the second electrical signal, when the NMOS transistor is in an on state, the signal amplifying circuit amplifies the first electrical signal or the second electrical signal, outputs the amplified signal of the first electrical signal or the amplified signal of the second electrical signal, and when the NMOS transistor is in an off state, the signal amplifying circuit amplifies the difference between the first electrical signal and the second electrical signal, and outputs the amplified signal of the difference between the first electrical signal and the second electrical signal.
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