CN113691157B - Rotation discontinuous control method for modular multilevel converter - Google Patents

Rotation discontinuous control method for modular multilevel converter Download PDF

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CN113691157B
CN113691157B CN202111017659.4A CN202111017659A CN113691157B CN 113691157 B CN113691157 B CN 113691157B CN 202111017659 A CN202111017659 A CN 202111017659A CN 113691157 B CN113691157 B CN 113691157B
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bridge arm
switch
wave
stage
state
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CN113691157A (en
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郭小强
王凡
王晓明
卢志刚
华长春
马瑞斯·马利诺夫斯基
乔瑟夫·格莱罗
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Yanshan University
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • H02M7/53871—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
    • H02M7/53873—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current with digital control
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/483—Converters with outputs that each can have more than two voltages levels
    • H02M7/487—Neutral point clamped inverters

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)

Abstract

The invention discloses a modularized multi-levelThe discontinuous control method for the rotation of the converter comprises the following steps: s1, determining the number N of cascaded H bridges, the switching frequency k of the circuit, and determining the triangular carrier V according to the number N of the cascaded H bridgescPhase shift angle theta of and the required triangular carrier wave VcThe number N; s2, determining the DC side voltage V of the circuitinResistance-inductance loads R and L in the circuit; and S3, determining the modulation degree m and the clamping angle alpha to obtain a rotary DPWM (digital pulse width modulation) wave, generating a left bridge arm modulation wave and a right bridge arm modulation wave of a corresponding circuit topology under the modulation of the rotary DPWM modulation wave, wherein the left bridge arm modulation wave and the right bridge arm modulation wave both comprise a clamping part and a modulation part and are respectively compared with a triangular carrier to generate a driving signal, and then driving the circuit, thereby completing the corresponding modulation process. During the clamping time, the switch is kept in a normally-on or off state, and during the normal modulation time, the switch operates at a high frequency.

Description

Rotation discontinuous control method for modular multilevel converter
Technical Field
The invention relates to the technical field of multi-level inverters, in particular to a rotation discontinuous control method of a modular multi-level converter.
Background
In recent years, multilevel inverters have been widely used in high voltage and high power systems. The multi-level inverter has the advantages of high voltage system capability, low harmonic distortion, easiness in expansion, high fault-tolerant capability and the like. Therefore, the multi-level inverter is widely applied to a high-voltage direct-current power transmission system and a renewable energy system. There are many topologies for multilevel inverters, with cascaded H-bridges being one of the most widely used topologies. There are many modulation modes of the cascaded H-bridge, including carrier phase shift, carrier stacking, discontinuous modulation, etc. The carrier phase shift modulation technology has great performance advantages, can ensure the power balance among modules and the quality of output waveforms, and is widely applied to the industrial field. However, carrier phase shift modulation has limitations such as high switching frequency, large circuit loss, and low circuit efficiency. Due to the high efficiency of the discontinuous modulation circuit and the small number of switching times, the application occasions are gradually increased.
It is easy to observe that the DPWM is only switched in the clamped part and the switch is still in high frequency operation for the rest of the time. Due to the appearance of a novel rotary type modulation wave, the heating and the loss balance of the switch can be greatly reduced and guaranteed. Therefore, the patent combines the rotary modulating wave and the DPWM to provide a rotary DPWM modulating method.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a discontinuous control method for rotation of a modular multilevel converter, which has fewer switching times, low switching loss, improved circuit efficiency and balanced heating among modules compared with the traditional DPWM modulation, thereby prolonging the service life of a switch and improving the reliability of a circuit.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows: a discontinuous control method for rotation of a modular multilevel converter comprises the following steps:
s1, determining the number N of cascaded H bridges, the switching frequency k of the circuit, and determining the triangular carrier V according to the number N of the cascaded H bridgescPhase shift angle theta of1And the required triangular carrier VcThe number N;
s2, determining the DC side voltage V of the circuitinResistance-inductance loads R and L in the circuit;
s3, determining a modulation degree m and a clamping angle alpha to obtain a rotary DPWM (digital pulse width modulation) modulation wave, generating a left bridge arm modulation wave and a right bridge arm modulation wave of a corresponding circuit topology under the modulation of the rotary DPWM modulation wave, wherein the left bridge arm modulation wave and the right bridge arm modulation wave both comprise a clamping part and a modulation part and are respectively compared with a triangular carrier wave, and when the left bridge arm modulation wave or the right bridge arm modulation wave is larger than the triangular carrier wave, generating a high driving signal; when the left bridge arm modulation wave or the right bridge arm modulation wave is smaller than the triangular carrier wave, the generated driving signal is low, the switch keeps a normally-on or off state within the clamping time, and the switch acts at a high frequency within the normal modulation time to drive the circuit, so that the corresponding modulation process is completed.
The technical scheme of the invention is further improved as follows: the triangular carrier phase shift angle θ in the step S11The expression of (a) is:
Figure GDA0003528370280000021
the technical scheme of the invention is further improved as follows: in step S3, the clamping angle α is any one of 30 °, 60 °, and 120 °.
The technical scheme of the invention is further improved as follows: in step S3, the expression of the rotating DPWM modulation wave is:
Figure GDA0003528370280000022
Figure GDA0003528370280000023
wherein, VDrefIs a modulated wave, V, modified from a conventional DPWM modulated wavedclampThe clamp type modulation wave is represented, the positive half cycle amplitude and the negative half cycle amplitude are the same, and the amplitude in the positive half cycle and the negative half cycle is kept constant and is used for clamping the switch to enable the switch to keep a certain state;
VDrefexpression:
Figure GDA0003528370280000031
Vdclampexpression:
Figure GDA0003528370280000032
the technical scheme of the invention is further improved as follows: in step S3, the circuits of the left arm modulated wave and the right arm modulated wave are sequentially divided into eight stages in one cycle, the first stage: the switch on the upper side of the left bridge arm is normally on, the switch on the lower side of the left bridge arm is turned off, the switch on the right bridge arm acts at high frequency, and the second stage is started after the first stage is finished; the second stage is as follows: the upper side switch of the left bridge arm and the lower side switch of the right bridge arm are in a normally-on state, the lower side switch of the left bridge arm and the upper side switch of the right bridge arm are in an off state, and a third stage is started after the second stage is finished; the third stage: the upper side switch of the left bridge arm and the lower side switch of the right bridge arm are in a normally-on state, the lower side switch of the left bridge arm and the upper side switch of the right bridge arm are in an off state, and the fourth stage is started after the third stage is finished; the fourth stage: the switch at the lower side of the right bridge arm is always kept in a normally-on state, the switch at the upper side of the right bridge arm is always kept in an off state, the switch at the left bridge arm acts in a high frequency mode, and the fifth stage is started after the fourth stage is finished; the fifth stage: the switch on the lower side of the left bridge arm is normally on, the switch on the upper side of the left bridge arm is switched off, the switch on the right bridge arm is switched on and switched off in a high frequency mode, and the sixth stage is started after the fifth stage is finished; the sixth stage: the upper side switch of the left bridge arm and the lower side switch of the right bridge arm are in an off state, the lower side switch of the left bridge arm and the upper side switch of the right bridge arm are in a normally-on state, and the seventh stage is started after the sixth stage is finished; a seventh stage: the upper side switch of the left bridge arm and the lower side switch of the right bridge arm are in an off state, the lower side switch of the left bridge arm and the upper side switch of the right bridge arm are in a normally-on state, and the eighth stage is started after the seventh stage is finished; the eighth stage: and the upper side switch of the right bridge arm is normally on, the lower side switch of the right bridge arm is turned off, the left bridge arm switch is turned on and turned off at high frequency, and after the eighth stage is finished, the periodic cycle is started.
The technical scheme of the invention is further improved as follows: the specific circuit state process in the first stage is as follows: the modulation wave of the left bridge arm is at the clamping part, and the modulation wave V of the left bridge armdLIs always greater than the triangular carrier VcAt this time, the left side bridge arm upper side switch S11In a normally open state, the left side bridge armLower side switch S12In an off state; modulated wave V of right bridge armdRIn the modulation part, the right bridge arm switch is switched on and off in high frequency, and when the right bridge arm modulates the wave VdRGreater than a triangular carrier VcTime, the lower side switch S of the right side bridge arm14On while the upper switch S of the right bridge arm13Turning off; when the right bridge arm modulates the wave VdRLess than the triangular carrier VcTime, right side bridge arm upper side switch S13Conducting while the lower side switch S of the right side bridge arm14Turning off, wherein the first stage is finished;
the specific circuit state process of the second stage is as follows: the modulation wave of the left bridge arm and the modulation wave of the right bridge arm are both in the clamping part, and the modulation wave V of the left bridge armdLAnd the modulated wave V of the right bridge armdRIs always greater than the triangular carrier VcAt this time, the left side bridge arm upper side switch S11In a normally-on state, the lower side switch S of the left bridge arm12In an off state; lower switch S of right bridge arm14On while the upper switch S of the right bridge arm13Turning off, wherein the second stage is finished;
the third stage specifically comprises the following circuit state processes: the modulation wave of the left bridge arm and the modulation wave of the right bridge arm are both in the clamping part, and the modulation wave V of the left bridge armdLAnd the modulated wave V of the right bridge armdRIs always greater than the triangular carrier VcAt this time, the left side bridge arm upper side switch S11In a normally-on state, the lower side switch S of the left bridge arm12In an off state; lower switch S of right bridge arm14Normally on state, with switch S on the right arm13An off state, at which point the third stage ends;
the fourth stage specifically comprises the following circuit state processes: the modulated wave of the right bridge arm is in the clamping part, and the modulated wave V of the right bridge armdRIs always greater than the triangular carrier VcRight side bridge arm lower side switch S14In a normally-on state, and simultaneously, the upper side switch S of the right bridge arm13Keeping the off state, the left bridge arm modulates the wave VdLIn the modulation part, the left bridge arm switch is switched on and off in high frequency, and when the left bridge arm modulates the wave VdLGreater than a triangular carrier VcTime, left side bridge arm upper side switch S11On, left side bridge arm lower side switch S12Turning off; when the left bridge arm modulates the wave VdLLess than the triangular carrier VcTime, left side bridge arm upper side switch S11Off, left arm lower switch S12Conducting, and ending the fourth stage;
the specific circuit state process of the fifth stage is as follows: the modulation wave of the left bridge arm is at the clamping part, and the modulation wave V of the left bridge armdLIs always less than the triangular carrier VcAt this time, the left side bridge arm upper side switch S11In an off state, the switch S is arranged at the lower side of the left bridge arm12In a normally on state; modulated wave V of right bridge armdRIn the modulation part, the right bridge arm switch is switched on and off in high frequency, and when the right bridge arm modulates the wave VdRGreater than a triangular carrier VcTime, the lower side switch S of the right side bridge arm14On while the upper switch S of the right bridge arm13Turning off; when the right bridge arm modulates the wave VdRLess than the triangular carrier VcTime, right side bridge arm upper side switch S13Conducting while the lower side switch S of the right side bridge arm14Turning off, wherein the fifth stage is finished;
the specific circuit state process of the sixth stage is as follows: the modulation wave of the left bridge arm and the modulation wave of the right bridge arm are both in the clamping part, and the modulation wave V of the left bridge armdLAnd the modulated wave V of the right bridge armdRIs always less than the triangular carrier VcAt this time, the left side bridge arm upper side switch S11In an off state, the switch S is arranged at the lower side of the left bridge arm12In a normally on state; lower switch S of right bridge arm14Is in an off state, and simultaneously the upper side switch S of the right bridge arm13In the normal on state, the sixth stage is finished;
the specific circuit state process in the seventh stage is as follows: the modulation wave of the left bridge arm and the modulation wave of the right bridge arm are both in the clamping part, and the modulation wave V of the left bridge armdLAnd the modulated wave V of the right bridge armdRIs always less than the triangular carrier VcAt this time, the left side bridge arm upper side switch S11In an off state, the switch S is arranged at the lower side of the left bridge arm12In a normally on state; lower switch S of right bridge arm14Is in an off state, and simultaneously the upper side switch S of the right bridge arm13In the normal on state, the seventh stage is finished;
the specific circuit state process of the eighth stage is as follows: the modulated wave of the right bridge arm is in the clamping part, and the modulated wave V of the right bridge armdRIs always less than the triangular carrier VcRight side bridge arm lower side switch S14In the off state, the upper side switch S of the right bridge arm13Keeping a normal open state; at the moment, the left bridge arm modulates the wave VdLIn the modulation part, the left bridge arm switch acts in high frequency, when the left bridge arm modulates the wave VdLGreater than a triangular carrier VcTime, left side bridge arm upper side switch S11On, left side bridge arm lower side switch S12Turning off; when the left bridge arm modulates the wave VdLLess than the triangular carrier VcTime, left side bridge arm upper side switch S11Off, left arm lower switch S12And conducting, and finishing the eighth stage at the moment.
Due to the adoption of the technical scheme, the invention has the technical progress that:
the modulation method is different from the traditional modulation method, the switch in the circuit is not always in high-frequency action, but is switched between high frequency and low frequency, a left bridge arm modulation wave and a right bridge arm modulation wave of the circuit topology are generated under the modulation of a rotary DPWM modulation wave, both the left bridge arm modulation wave and the right bridge arm modulation wave comprise a clamping part and a modulation part, the switching frequency can be effectively reduced, the circuit efficiency is improved, the left bridge arm modulation wave and the right bridge arm modulation wave are sequentially divided into eight stages in one period, the switch is switched on and off in an ordered mode, and the output waveform quality can be ensured while the switching frequency is reduced; under the prerequisite of guaranteeing output waveform quality, rotatory DPWM modulation has less switching frequency than traditional DPWM modulation, and switching loss is low, and circuit efficiency obtains promoting, and the intermodule is heated the equilibrium, and then can prolong switch life, promotes the circuit reliability.
Drawings
FIG. 1 is a single-phase cascaded H-bridge multilevel inverter topology;
FIG. 2 is a schematic diagram of a triangular carrier wave in the present invention;
FIG. 3 is a schematic diagram of the novel modulation wave generation process of the present invention;
FIG. 4 is a schematic diagram of the present invention of the rotating DPWM modulation principle;
FIG. 5 is a schematic diagram of the rotary DPWM modulation operation of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the following examples:
as shown in fig. 1, N cascaded H-bridge cascades are provided in the figure, and when the method for controlling rotation discontinuity of a modular multilevel converter provided by the present invention is applied to an H-bridge topology, compared with a conventional modulation method, the number of switching times is less, switches in a circuit are not always in high-frequency action, but are switched between high frequency and low frequency, a left bridge arm modulation wave and a right bridge arm modulation wave of the circuit topology are generated under modulation of a rotating DPWM modulation wave, and both the left bridge arm modulation wave and the right bridge arm modulation wave include a clamping part and a modulation part, so that the switching times can be effectively reduced, the circuit efficiency can be improved, the side bridge arm modulation wave and the right bridge arm modulation wave are sequentially divided into eight stages in one cycle, and switches are turned on and off in an ordered manner, and the output waveform quality can be ensured while the switching times are reduced; under the prerequisite of guaranteeing output waveform quality, rotatory DPWM modulation has less switching frequency than traditional DPWM modulation, and switching loss is low, and circuit efficiency obtains promoting, and the intermodule is heated the equilibrium, and then can prolong switch life, promotes the circuit reliability.
The method specifically comprises the following steps:
s1, as shown in figure 2, determining the number N of cascaded H bridges, the switching frequency k of the circuit, and determining the triangular carrier V according to the number N of the cascaded H bridgescPhase shift angle theta of1And the required triangular carrier VcThe number N; triangular carrier phase shift angle theta1The expression of (a) is:
Figure GDA0003528370280000071
s2, determining the DC side voltage V of the circuitinResistance-inductance loads R and L in the circuit;
s3, determining a modulation degree m and a clamping angle α, where the clamping angle α is any one of 30 °, 60 ° and 120 °, and the clamping angle α adopted by the present invention is 60 °, obtaining a rotating DPWM modulated wave, as shown in fig. 3 (c), and the rotating DPWM modulated wave expression is:
Figure GDA0003528370280000072
Figure GDA0003528370280000081
wherein, VDrefIs a modulated wave modified from a conventional DPWM modulated wave, as shown in fig. 3 (a); vdclampThe representation is a clamp type modulation wave, as shown in fig. 3 (b), the amplitudes of the positive and negative half cycles are the same, and the amplitudes in the positive and negative half cycles are kept constant, so as to clamp the switch and keep the switch in a certain state;
VDrefexpression:
Figure GDA0003528370280000082
Vdclampexpression:
Figure GDA0003528370280000083
generating a left bridge arm modulation wave and a right bridge arm modulation wave of a corresponding circuit topology under the modulation of a rotary DPWM modulation wave, wherein the left bridge arm modulation wave and the right bridge arm modulation wave both comprise a clamping part and a modulation part and are respectively compared with a triangular carrier wave, and when the left bridge arm modulation wave or the right bridge arm modulation wave is larger than the triangular carrier wave, the generated driving signal is high; when the left bridge arm modulation wave or the right bridge arm modulation wave is smaller than the triangular carrier wave, the generated driving signal is low, the switch keeps a normally-on or off state within the clamping time, and the switch acts at a high frequency within the normal modulation time to drive the circuit, so that the corresponding modulation process is completed.
The specific modulation process is as follows, fig. 4 is a schematic diagram of the principle of the rotary DPWM modulation of the single-phase cascaded H-bridge multi-level inverter proposed by the present invention, and since the upper and lower switching tubes of the same bridge arm are complementarily turned on, the left bridge arm in fig. 4 only displays the upper switch S of the left bridge arm11Drive signal g of11The left bridge arm only displays the driving signal g of the right bridge arm side switch14In the figure, VoThe output voltage of the H bridge AC side is shown, and the input voltage of the DC side is shown as E.
The left arm modulated wave and the right arm modulated wave are sequentially divided into eight stages in one cycle as shown in fig. 3 (c):
the first stage (t)0-t1) And a second stage (t)1-t2) The corresponding specific circuit state process is shown in FIG. 5(1), the first stage (t)0-t1): the upper side switch of the left side bridge arm is normally on, the lower side switch of the left side bridge arm is turned off, the right side bridge arm switch acts at high frequency, and the specific circuit state process is as follows: the modulation wave of the left bridge arm is at the clamping part, and the modulation wave V of the left bridge armdLIs always greater than the triangular carrier VcAt this time, the left side bridge arm upper side switch S11In a normally-on state, the lower side switch S of the left bridge arm12In an off state; modulated wave V of right bridge armdRIn the modulation part, the right bridge arm switch is switched on and off in high frequency, and when the right bridge arm modulates the wave VdRGreater than a triangular carrier VcTime, the lower side switch S of the right side bridge arm14On while the upper switch S of the right bridge arm13Turning off; when the right bridge arm modulates the wave VdRLess than the triangular carrier VcTime, right side bridge arm upper side switch S13Conducting while the lower side switch S of the right side bridge arm14And turning off, wherein the first stage is finished, and the second stage is turned on after the first stage is finished.
The second stage (t)1-t2): the upper side switch of the left bridge arm and the lower side switch of the right bridge armIn the normal on state, the left side bridge arm lower side switch and the right side bridge arm upper side switch are in the off state, and the specific circuit state process is as follows: the modulation wave of the left bridge arm and the modulation wave of the right bridge arm are both in the clamping part, and the modulation wave V of the left bridge armdLAnd the modulated wave V of the right bridge armdRIs always greater than the triangular carrier VcAt this time, the left side bridge arm upper side switch S11In a normally-on state, the lower side switch S of the left bridge arm12In an off state; lower switch S of right bridge arm14On while the upper switch S of the right bridge arm13And turning off, finishing the second stage at the moment, and turning on the third stage after finishing the second stage.
The third stage (t)2-t3) And a fourth phase (t)3-t4) The corresponding specific circuit state process is shown in FIG. 5(2), and the third stage (t)2-t3): the left side bridge arm upper side switch and the right side bridge arm lower side switch are in a normally-on state, the left side bridge arm lower side switch and the right side bridge arm upper side switch are in an off state, and the specific circuit state process is as follows: the modulation wave of the left bridge arm and the modulation wave of the right bridge arm are both in the clamping part, and the modulation wave V of the left bridge armdLAnd the modulated wave V of the right bridge armdRIs always greater than the triangular carrier VcAt this time, the left side bridge arm upper side switch S11In a normally-on state, the lower side switch S of the left bridge arm12In an off state; lower switch S of right bridge arm14Normally on state, with switch S on the right arm13And (4) a shutdown state, wherein the third stage is finished, and the fourth stage is started after the third stage is finished.
The fourth stage (t)3-t4): the lower side switch of the right side bridge arm always keeps a normally-on state, the upper side switch of the right side bridge arm always keeps an off state, the left side bridge arm switch acts at high frequency, and the specific circuit state process is as follows: the modulated wave of the right bridge arm is in the clamping part, and the modulated wave V of the right bridge armdRIs always greater than the triangular carrier VcRight side bridge arm lower side switch S14In a normally-on state, and simultaneously, the upper side switch S of the right bridge arm13Keeping the off state, the left bridge arm modulates the wave VdLIn the modulation section, when leftThe switch of the side bridge arm is switched on and off at high frequency, and when the left bridge arm modulates the wave VdLGreater than a triangular carrier VcTime, left side bridge arm upper side switch S11On, left side bridge arm lower side switch S12Turning off; when the left bridge arm modulates the wave VdLLess than the triangular carrier VcTime, left side bridge arm upper side switch S11Off, left arm lower switch S12And conducting, finishing the fourth stage at the moment, and starting the fifth stage after finishing the fourth stage.
The fifth stage (t)4-t5) And a sixth phase (t)5-t6) The corresponding specific circuit state process is shown in FIG. 5(3), the fifth stage (t)4-t5): the switch on the lower side of the left bridge arm is normally on, the switch on the upper side of the left bridge arm is turned off, the switch on the right bridge arm is turned on and turned off at high frequency, and the specific circuit state process is as follows: the modulation wave of the left bridge arm is at the clamping part, and the modulation wave V of the left bridge armdLIs always less than the triangular carrier VcAt this time, the left side bridge arm upper side switch S11In an off state, the switch S is arranged at the lower side of the left bridge arm12In a normally on state; modulated wave V of right bridge armdRIn the modulation part, the right bridge arm switch is switched on and off in high frequency, and when the right bridge arm modulates the wave VdRGreater than a triangular carrier VcTime, the lower side switch S of the right side bridge arm14On while the upper switch S of the right bridge arm13Turning off; when the right bridge arm modulates the wave VdRLess than the triangular carrier VcTime, right side bridge arm upper side switch S13Conducting while the lower side switch S of the right side bridge arm14And turning off, finishing the fifth stage at the moment, and turning on the sixth stage after the fifth stage is finished.
The sixth stage (t)5-t6): the left side bridge arm upper side switch and the right side bridge arm lower side switch are in an off state, the left side bridge arm lower side switch and the right side bridge arm upper side switch are in a normally-on state, and the specific circuit state process is as follows: the modulation wave of the left bridge arm and the modulation wave of the right bridge arm are both in the clamping part, and the modulation wave V of the left bridge armdLAnd the modulated wave V of the right bridge armdRIs always less than the triangular carrier VcAt this time, the left side bridge arm upper side switch S11In an off state, the switch S is arranged at the lower side of the left bridge arm12In a normally on state; lower switch S of right bridge arm14Is in an off state, and simultaneously the upper side switch S of the right bridge arm13And (4) in a normally-on state, wherein the sixth stage is ended, and the seventh stage is started after the sixth stage is ended.
Seventh stage (t)6-t7) And an eighth stage (t)7-t8) The corresponding specific circuit state process is shown in FIG. 5(4), and the seventh stage (t)6-t7): the left side bridge arm upper side switch and the right side bridge arm lower side switch are in an off state, the left side bridge arm lower side switch and the right side bridge arm upper side switch are in a normally-on state, and the specific circuit state process is as follows: the modulation wave of the left bridge arm and the modulation wave of the right bridge arm are both in the clamping part, and the modulation wave V of the left bridge armdLAnd the modulated wave V of the right bridge armdRIs always less than the triangular carrier VcAt this time, the left side bridge arm upper side switch S11In an off state, the switch S is arranged at the lower side of the left bridge arm12In a normally on state; lower switch S of right bridge arm14Is in an off state, and simultaneously the upper side switch S of the right bridge arm13And (4) in a normally-on state, wherein the seventh stage is finished, and the eighth stage is started after the seventh stage is finished.
The eighth stage (t)7-t8): the upper side switch of the right side bridge arm is normally on, the lower side switch is turned off, the left side bridge arm switch is in high-frequency on and off, and the specific circuit state process is as follows: the modulated wave of the right bridge arm is in the clamping part, and the modulated wave V of the right bridge armdRIs always less than the triangular carrier VcRight side bridge arm lower side switch S14In the off state, the upper side switch S of the right bridge arm13Keeping a normal open state; at the moment, the left bridge arm modulates the wave VdLIn the modulation part, the left bridge arm switch acts in high frequency, when the left bridge arm modulates the wave VdLGreater than a triangular carrier VcTime, left side bridge arm upper side switch S11On, left side bridge arm lower side switch S12Turning off; when the left bridge arm modulates the wave VdLLess than the triangular carrier VcTime, left side bridge arm upper side switch S11Off, left armLower side switch S12And conducting, finishing the eighth stage at the moment, and starting the periodic cycle after finishing the eighth stage.

Claims (1)

1. A rotation discontinuous control method of a modular multilevel converter is characterized by comprising the following steps: the method comprises the following steps:
s1, determining the number N of cascaded H bridges, the switching frequency k of the circuit, and determining the triangular carrier V according to the number N of the cascaded H bridgescPhase shift angle theta of1And the required triangular carrier VcNumber N, triangular carrier VcThe part with negative amplitude in the traditional triangular carrier wave is rotated by 180 degrees around the center, the part with positive amplitude is kept unchanged, and the phase shift angle theta of the triangular carrier wave is1The expression of (a) is:
Figure FDA0003528370270000011
s2, determining the DC side voltage V of the circuitinResistance-inductance loads R and L in the circuit;
s3, determining a modulation degree m and a clamping angle alpha, wherein the clamping angle alpha adopts 60 degrees to obtain a rotating DPWM modulation wave, and the expression of the rotating DPWM modulation wave is as follows:
Figure FDA0003528370270000012
Figure FDA0003528370270000013
wherein, VDrefIs a modulated wave, V, modified from a conventional DPWM modulated wavedclampThe clamp type modulation wave is represented, the positive half cycle amplitude and the negative half cycle amplitude are the same, and the amplitude in the positive half cycle and the negative half cycle is kept constant and is used for clamping the switch to enable the switch to keep a certain state;
VDrefexpression:
Figure FDA0003528370270000014
Vdclampexpression:
Figure FDA0003528370270000021
generating a left bridge arm modulation wave and a right bridge arm modulation wave of a corresponding circuit topology under the modulation of a rotary DPWM modulation wave, wherein the left bridge arm modulation wave and the right bridge arm modulation wave both comprise a clamping part and a modulation part and are respectively compared with a triangular carrier wave, and when the left bridge arm modulation wave or the right bridge arm modulation wave is larger than the triangular carrier wave, the generated driving signal is high; when the left bridge arm modulation wave or the right bridge arm modulation wave is smaller than the triangular carrier wave, the generated driving signal is low, the switch keeps a normally-on or off state within the clamping time, and the switch acts at a high frequency within the normal modulation time so as to drive the circuit, thereby completing the corresponding modulation process;
the circuit of the left side bridge arm modulation wave and the right side bridge arm modulation wave in one cycle is divided into eight stages in sequence, wherein the first stage comprises the following steps: the upper side switch of the left side bridge arm is normally on, the lower side switch of the left side bridge arm is turned off, and the right side bridge arm switch acts at high frequency, wherein the specific circuit state process in the first stage is as follows: the modulation wave of the left bridge arm is at the clamping part, and the modulation wave V of the left bridge armdLIs always greater than the triangular carrier VcAt this time, the left side bridge arm upper side switch S11In a normally-on state, the lower side switch S of the left bridge arm12In an off state; modulated wave V of right bridge armdRIn the modulation part, the right bridge arm switch is switched on and off in high frequency, and when the right bridge arm modulates the wave VdRGreater than a triangular carrier VcTime, the lower side switch S of the right side bridge arm14On while the upper switch S of the right bridge arm13Turning off; when the right bridge arm modulates the wave VdRLess than the triangular carrier VcTime, right side bridge arm upper side switch S13Conducting while the lower side switch S of the right side bridge arm14Shut down, at which point the first stage endsStarting the second stage after the first stage is finished;
the second stage is as follows: the upper side switch of the left bridge arm and the lower side switch of the right bridge arm are in a normally-on state, the lower side switch of the left bridge arm and the upper side switch of the right bridge arm are in an off state, and the specific circuit state process in the second stage is as follows: the modulation wave of the left bridge arm and the modulation wave of the right bridge arm are both in the clamping part, and the modulation wave V of the left bridge armdLAnd the modulated wave V of the right bridge armdRIs always greater than the triangular carrier VcAt this time, the left side bridge arm upper side switch S11In a normally-on state, the lower side switch S of the left bridge arm12In an off state; lower switch S of right bridge arm14On while the upper switch S of the right bridge arm13Turning off, wherein the second stage is finished, and the third stage is started after the second stage is finished;
the third stage: the upper side switch of the left bridge arm and the lower side switch of the right bridge arm are in a normally-on state, the lower side switch of the left bridge arm and the upper side switch of the right bridge arm are in an off state, and the specific circuit state process in the third stage is as follows: the modulation wave of the left bridge arm and the modulation wave of the right bridge arm are both in the clamping part, and the modulation wave V of the left bridge armdLAnd the modulated wave V of the right bridge armdRIs always greater than the triangular carrier VcAt this time, the left side bridge arm upper side switch S11In a normally-on state, the lower side switch S of the left bridge arm12In an off state; lower switch S of right bridge arm14Normally on state, with switch S on the right arm13A shutdown state, wherein the third stage is finished, and the fourth stage is started after the third stage is finished;
the fourth stage: the switch at the lower side of the right bridge arm is always kept in a normally-on state, the switch at the upper side of the right bridge arm is always kept in an off state, the switch at the left bridge arm acts in a high frequency mode, and the specific circuit state process at the fourth stage is as follows: the modulated wave of the right bridge arm is in the clamping part, and the modulated wave V of the right bridge armdRIs always greater than the triangular carrier VcRight side bridge arm lower side switch S14In a normally-on state, and simultaneously, the upper side switch S of the right bridge arm13Keeping the off state, the left bridge arm modulates the wave VdLIn the modulation partWhen the left bridge arm modulation wave V is generated, the left bridge arm switch is switched on and off at high frequencydLGreater than a triangular carrier VcTime, left side bridge arm upper side switch S11On, left side bridge arm lower side switch S12Turning off; when the left bridge arm modulates the wave VdLLess than the triangular carrier VcTime, left side bridge arm upper side switch S11Off, left arm lower switch S12Conducting, finishing the fourth stage at the moment, and starting the fifth stage after finishing the fourth stage;
the fifth stage: the switch on the lower side of the left bridge arm is normally on, the switch on the upper side of the left bridge arm is turned off, the switch on the right bridge arm is turned on and turned off at high frequency, and the specific circuit state process in the fifth stage is as follows: the modulation wave of the left bridge arm is at the clamping part, and the modulation wave V of the left bridge armdLIs always less than the triangular carrier VcAt this time, the left side bridge arm upper side switch S11In an off state, the switch S is arranged at the lower side of the left bridge arm12In a normally on state; modulated wave V of right bridge armdRIn the modulation part, the right bridge arm switch is switched on and off in high frequency, and when the right bridge arm modulates the wave VdRGreater than a triangular carrier VcTime, the lower side switch S of the right side bridge arm14On while the upper switch S of the right bridge arm13Turning off; when the right bridge arm modulates the wave VdRLess than the triangular carrier VcTime, right side bridge arm upper side switch S13Conducting while the lower side switch S of the right side bridge arm14Turning off, wherein the fifth stage is finished, and the sixth stage is started after the fifth stage is finished;
the sixth stage: the upper side switch of the left bridge arm and the lower side switch of the right bridge arm are in an off state, the lower side switch of the left bridge arm and the upper side switch of the right bridge arm are in a normally-on state, and the specific circuit state process in the sixth stage is as follows: the modulation wave of the left bridge arm and the modulation wave of the right bridge arm are both in the clamping part, and the modulation wave V of the left bridge armdLAnd the modulated wave V of the right bridge armdRIs always less than the triangular carrier VcAt this time, the left side bridge arm upper side switch S11In an off state, the switch S is arranged at the lower side of the left bridge arm12In a normally on state; lower switch S of right bridge arm14In an off stateAnd simultaneously the upper side switch S of the right bridge arm13The normal open state is achieved, the sixth stage is finished, and the seventh stage is started after the sixth stage is finished;
a seventh stage: the upper side switch of the left bridge arm and the lower side switch of the right bridge arm are in an off state, the lower side switch of the left bridge arm and the upper side switch of the right bridge arm are in a normally-on state, and the specific circuit state process in the seventh stage is as follows: the modulation wave of the left bridge arm and the modulation wave of the right bridge arm are both in the clamping part, and the modulation wave V of the left bridge armdLAnd the modulated wave V of the right bridge armdRIs always less than the triangular carrier VcAt this time, the left side bridge arm upper side switch S11In an off state, the switch S is arranged at the lower side of the left bridge arm12In a normally on state; lower switch S of right bridge arm14Is in an off state, and simultaneously the upper side switch S of the right bridge arm13In a normal on state, the seventh stage is finished, and the eighth stage is started after the seventh stage is finished;
the eighth stage: the upper side switch of the right side bridge arm is normally on, the lower side switch is turned off, the left side bridge arm switch is in high-frequency on and off, and the specific circuit state process of the eighth stage is as follows: the modulated wave of the right bridge arm is in the clamping part, and the modulated wave V of the right bridge armdRIs always less than the triangular carrier VcRight side bridge arm lower side switch S14In the off state, the upper side switch S of the right bridge arm13Keeping a normal open state; at the moment, the left bridge arm modulates the wave VdLIn the modulation part, the left bridge arm switch acts in high frequency, when the left bridge arm modulates the wave VdLGreater than a triangular carrier VcTime, left side bridge arm upper side switch S11On, left side bridge arm lower side switch S12Turning off; when the left bridge arm modulates the wave VdLLess than the triangular carrier VcTime, left side bridge arm upper side switch S11Off, left arm lower switch S12And conducting, wherein the eighth stage is finished, and starting a periodic cycle.
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US10158299B1 (en) * 2018-04-18 2018-12-18 Rockwell Automation Technologies, Inc. Common voltage reduction for active front end drives
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