CN113690373B - Based on HfS 2 Organic solar cell as hole transport layer and method for manufacturing the same - Google Patents
Based on HfS 2 Organic solar cell as hole transport layer and method for manufacturing the same Download PDFInfo
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Abstract
The invention discloses a method based on HfS 2 An organic solar cell which is a hole transport layer and a method for manufacturing the same. The organic solar cell structure comprises an anode layer, a hole transport layer, an active layer, an electron transport layer and a cathode layer from bottom to top; the hole transport layer is HfS 2 . The organic solar cell of the invention uses HfS 2 The hole transport layer replaces the traditional PEDOT PSS, the defects of corrosion of ITO and an active layer caused by weak acidity of the PEDOT PSS and low conductivity of the PEDOT PSS are overcome, and meanwhile, the stability and the conversion efficiency of the solar cell are improved. The invention adopts a liquid phase stripping method to prepare the bis-HfS 2 A hole transport layer with simple process and easy regulation, and prepared HfS 2 The film is smooth and compact; simultaneously, preparing HfS 2 The process is carried out at room temperature without high temperature heat treatment.
Description
Technical Field
The invention belongs to the field of solar cells, and particularly relates to a HfS-based solar cell 2 An organic solar cell which is a hole transport layer and a method for manufacturing the same.
Background
Organic solar cells, as a new generation of clean and renewable energy technology, have been receiving much attention from researchers at home and abroad in recent decades due to their advantages of low cost, light weight, flexibility, solution preparation, printable production, and wide raw material sources. The photoelectric conversion efficiency of organic solar cells based on such materials has rapidly developed over the last few years, and nowadays single junction devices are approaching 20%.
Currently, the efficient organic solar energy hole transport layer usually adopts PEDOT: PSS. However, PEDOT and PSS have weak acidity, have certain corrosivity on ITO and an active layer, and seriously affect the stability of a device. Meanwhile, the conductivity of the material is low, and the performance of the device is further improved. To solve these problems, V is proposed 2 O 5 ,WO 3 ,MoO 3 Etc. as a material substituting for the hole transport layer. However, most of these high temperature oxides rely on vacuum treatment or require complicated processes such as high temperature annealing, which is not favorable for the production of solar cells. And two-dimensional semiconductor HfS 2 HfS with extremely high carrier mobility and high work function and two-dimensional structure 2 Has high light transmittance. These advantages indicate HfS 2 The material has huge application prospect as a hole transport layer material of an organic solar cell (Adv. Mater.2019,1902965; DOI: 10.1002/adma.201902965).
Disclosure of Invention
In order to solve the defects of the prior art, the invention aims to provide a HfS-based method 2 Provides an organic solar cell of a hole transport layer and a preparation method thereof, and provides a low-temperature liquid phase stripping method which has simple process and is easy to regulate and control and is used for preparing a film based on HfS 2 An organic solar cell which is a hole transport layer and a method for manufacturing the same.
The purpose of the invention is realized by the following technical scheme:
based on HfS 2 The organic solar cell is a hole transport layer, and the organic solar cell structure comprises an anode layer, a hole transport layer, an active layer, an electron transport layer and a cathode layer from bottom to top; the hole transport layer is HfS 2 。
Preferably, the anode layer is Indium Tin Oxide (ITO), the active layer is PBDB-T: ITIC, the electron transport layer is PFN-Br, and the cathode layer is aluminum (Al).
Preferably, the hole transport layer HfS 2 The thickness is 3-5 nm, the thickness of the active layer is 100-110 nm, and the thickness of the electron transport layer is 45nm and the thickness of the cathode layer is 90-100 nm.
HfS-based as described above 2 A method for preparing an organic solar cell which is a hole transport layer, comprising the steps of:
(1) Carrying out plasma treatment on the surface of the anode layer for 10-15 minutes;
(2) HfS is added 2 The precursor solution is coated on the surface of the anode layer treated in the step (1) in a rotating speed of 1000-3000 rpm in a rotating way, and is annealed for 5-10 minutes at 80-100 ℃ under the protective atmosphere to form the product based on HfS 2 A hole transport layer of (a);
(3) In the step (2), the HfS 2 Spin-coating an active layer precursor solution on the hole transport layer, drying, and annealing at 100-120 ℃ for 7-10 minutes to obtain an active layer;
(4) Spin-coating an electron transport layer precursor solution on the active layer in the step (3) to form an electron transport layer;
(5) And (5) evaporating a cathode layer on the electron transport layer in the step (4).
Preferably, the HfS of step (2) 2 The preparation method of the precursor solution comprises the following steps: hfS is added 2 Adding the powder into an isopropanol solvent, and performing ultrasonic dispersion in an ice bath; then centrifugating to obtain supernatant fluid which is HfS 2 A precursor liquid.
Further preferably, the HfS 2 The mass-to-volume ratio of the powder to the isopropanol solvent is 50mg:2 to 5mL.
Further preferably, the time of ultrasonic dispersion is 10 to 20 hours.
More preferably, the rotation speed of the centrifugation is 3000-5000 rpm, and the time of the centrifugation is 15-30 min.
Preferably, the hole transport layer after the annealing treatment in the step (2) is subjected to plasma treatment for 0 to 30 minutes.
Preferably, the active layer precursor solution in step (3) contains an additive DIO.
Compared with the prior art, the invention has the following beneficial effects:
compared with the traditional method using PEDOT PSS as the hole transport layer, the HfS used in the invention 2 For the hole transport layer, a solution spin coating method is adopted,the process is simple, and the annealing temperature is low. The HfS2 not only has the work function similar to that of the traditional hole transport material, but also has extremely high conductivity and chemical stability. This makes the device with HfS2 as the hole transport layer have higher photoelectric conversion efficiency and device stability than the device with PEDOT: PSS as the hole transport layer.
Drawings
Fig. 1 is a schematic structural diagram of an organic solar cell according to the present invention, in which 1 represents an anode layer, 2 represents a hole transport layer, 3 represents an active layer, 4 represents an electron transport layer, and 5 represents a cathode layer.
FIG. 2 shows ITO and HfS of example 1 2 The transmittance of the film.
Fig. 3 is a graph of current density versus voltage for solar devices of comparative example and example 1.
Fig. 4 is a graph of stability of solar devices of comparative example and example 1.
Detailed Description
The invention is further described with reference to the following examples, which are intended to be illustrative of the invention and are not to be construed as limiting thereof. The present invention is not limited to the following examples and embodiments.
Comparative example
In the embodiment, the organic solar cell structure is based on the PEDOT, PSS is a hole transport layer, the device structure comprises an anode layer, the hole transport layer, an active layer, an electron transport layer and a cathode layer from bottom to top, and the preparation method comprises the following steps:
1. cleaning of the anode substrate: and (3) sequentially carrying out ultrasonic treatment on the substrate (ITO) by using liquid detergent, deionized water, acetone, absolute ethyl alcohol and isopropanol in an ultrasonic cleaning instrument for 15 minutes, and then drying in a vacuum drying oven at 70-80 ℃ to obtain the substrate with a clean surface required by the experiment.
2. Preparation of a hole transport layer by using PEDOT and PSS: the cleaned and dried ITO was subjected to plasma treatment for 10 minutes. The PEDOT PSS solution was spin coated on the ITO surface at 3500rpm for 40 seconds. Finally, PEDOT PSS is annealed at 150 ℃ by 10 to be divided into PEDOT PSS-based hole transport layers with the thickness of 30nm.
3. Preparation of the active layer: PBDB-T and ITIC are mixed according to the mass ratio of 1:1 is dissolved in chlorobenzene solution to prepare solution with the concentration of 20mg/mL, and then the volume ratio is 99.5:0.5 adding DIO additive to the solution to obtain the precursor solution of the active layer. The active layer solution was spin coated onto the PEDOT: PSS hole transport layer at 2500rpm for 60 seconds to form a film. And annealing at 100 ℃ for 10 minutes after the film is completely dried to obtain an active layer with the thickness of 100nm.
4. Preparation of an electron transport layer: an electron transport layer (spin speed: 3000rpm; spin time: 30 seconds) was formed by spin-coating a 0.5mg/mL solution of PFN-Br in methanol onto the active layer to a thickness of 5nm.
5. Preparing a cathode layer: metal Al was evaporated onto the electron transport layer using a vacuum evaporator to form a cathode layer of 100nm thickness.
Example 1
In the present embodiment, based on HfS 2 An organic solar cell structure being a hole transport layer, the device structure being as shown in fig. 1: the cathode layer comprises an anode layer, a hole transport layer, an active layer, an electron transport layer and a cathode layer from bottom to top, and the preparation method comprises the following steps:
1. cleaning the anode substrate: and (3) sequentially carrying out ultrasonic treatment on the substrate (ITO) by using liquid detergent, deionized water, acetone, absolute ethyl alcohol and isopropanol in an ultrasonic cleaning instrument for 15 minutes, and then drying in a vacuum drying oven at 70-80 ℃ to obtain the substrate with a clean surface required by the experiment.
2、HfS 2 For the preparation of the hole transport layer: 50mg of HfS 2 The powder was added to 2mL of isopropanol solvent and dispersed ultrasonically for 20h in an ice bath. Centrifuging the dispersed suspension at 5000rpm for 15min, and collecting the supernatant as HfS 2 A precursor liquid. The washed and dried ITO was subjected to plasma treatment for 10 minutes. HfS is added 2 The precursor solution was spin coated on the ITO surface at 2000rpm and annealed at 80 ℃ for 10 minutes in a nitrogen filled glove. Last pair of HfS 2 The film is formed on the basis of HfS by plasma treatment for 15 minutes 2 The hole transport layer of (3) has a thickness of 3nm.
3. Preparation of the active layer: PBDB-T and ITIC are mixed according to the mass ratio of 1:1 in chlorobenzenePreparing a solution with the concentration of 20mg/mL in the solution, and then mixing the solution according to the volume ratio of 99.5:0.5 adding DIO additive to the solution to obtain the precursor solution of the active layer. The active layer solution was applied to HfS at 2500rpm 2 The hole transport layer was spin-coated for 60 seconds to form a film. And annealing at 100 ℃ for 10 minutes after the film is completely dried to obtain an active layer with the thickness of 100nm.
4. Preparation of an electron transport layer: an electron transport layer (spin speed: 3000rpm; spin time: 30 seconds) was formed on the active layer by spin-coating a 0.5mg/mL PFN-Br methanol solution to a thickness of 5nm.
5. Preparing a cathode layer: metal Al was evaporated on the electron transport layer using a vacuum evaporator to form a cathode layer of 100nm thickness.
Example 2
Device preparation on the basis of example 1, on HfS 2 Preparation of hole transport layer without alignment to HfS 2 The film is subjected to plasma treatment.
Example 3
Device preparation on the basis of example 1, on HfS 2 Preparation of hole transport layer to HfS 2 The film was plasma treated for 5 minutes.
Example 4
Device preparation on the basis of example 1, on HfS 2 Preparation of hole transport layer to HfS 2 The film was subjected to plasma treatment for 10 minutes.
Example 5
Device preparation on the basis of example 1, on HfS 2 For HfS in preparation of hole transport layer 2 The film was subjected to plasma treatment for 30 minutes.
Description of Performance parameters
FIG. 2 shows ITO and HfS of example 1 2 Transmittance of thin film, hfS, as can be seen from the film transmittance of FIG. 2 2 The film has high light transmittance which is close to the transmittance of ITO, so that the light absorption of the active layer is facilitated, and the short-circuit current is improved. FIG. 3 is a J-V curve of the organic solar cells of the corresponding example 1 and comparative example, and from FIG. 3, it can be seen that HfS 2 Hole transportThe layer has a higher current density;
FIG. 4 is a graph of device stability for comparative example and example 1, from which it can be seen that based on HfS 2 The device which is the hole transport layer (example 1) has more excellent stability over time than the device based on PEDOT: PSS being the hole transport layer (comparative example). After one month of storage, based on HfS 2 The device performance for the hole transport layer (example 1) still maintained 70% of the initial efficiency, whereas the device based on PEDOT: PSS for the hole transport layer (comparative example) maintained only 40% of the initial efficiency. Summarizing the above, it is shown that HfS 2 The hole transport layer applied to the organic solar cell has a great development prospect.
TABLE 1
Table 1 shows the performance parameters of the examples. As can be seen, hfS 2 After plasma treatment, the short-circuit current, the open-circuit voltage and the fill factor of the device are effectively improved. The optimum is reached in 15 minutes with a conversion efficiency of up to 11.2%, which exceeds that of devices based on PEDOT: PSS as hole transport layer (comparative example). This indicates HfS after plasma treatment 2 The charge extraction and the charge transportation of the device are improved, and the charge recombination is reduced.
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, and equivalents thereof are intended to be included in the scope of the present invention.
Claims (10)
1. Based on HfS 2 The organic solar cell is a hole transport layer, and is characterized in that the organic solar cell structure comprises an anode layer, a hole transport layer, an active layer, an electron transport layer and a cathode layer from bottom to top; the hole transport layer is HfS 2 ；
The HfS-based 2 The preparation method of the organic solar cell serving as the hole transport layer comprises the following steps of:
(1) Carrying out plasma treatment on the surface of the anode layer for 10 to 15 minutes;
(2) HfS is subjected to 2 The precursor is coated on the surface of the anode layer treated in the step (1) in a rotating speed of 1000-3000 rpm in a rotating mode, and annealing treatment is carried out for 5-10 minutes at 80-100 ℃ in a protective atmosphere to form the film based on HfS 2 A hole transport layer of (a);
(3) At step (2) the HfS 2 Spin-coating an active layer precursor solution on the hole transport layer, drying, and annealing at 100-120 ℃ for 7-10 minutes to obtain an active layer;
(4) Spin-coating an electron transport layer precursor solution on the active layer in the step (3) to form an electron transport layer;
(5) And (4) evaporating a cathode layer on the electron transport layer in the step (4).
2. The organic solar cell of claim 1, wherein the anode layer is indium tin oxide, the active layer is PBDB-T ITIC, the electron transport layer is PFN-Br, and the cathode layer is aluminum.
3. The organic solar cell of claim 1, wherein the hole transport layer HfS 2 The thickness is 3 to 5nm, the thickness of the active layer is 100 to 110nm, the thickness of the electron transport layer is 4 to 5nm, and the thickness of the cathode layer is 90 to 100nm.
4. HfS based according to any of the claims 1-3 2 The preparation method of the organic solar cell serving as the hole transport layer is characterized by comprising the following steps of:
(1) Carrying out plasma treatment on the surface of the anode layer for 10 to 15 minutes;
(2) HfS is subjected to 2 The precursor is coated on the surface of the anode layer treated in the step (1) in a rotating speed of 1000 to 3000rpm in a rotating mode, and annealing treatment is carried out for 5 to 10 minutes at a temperature of 80 to 100 ℃ in a protective atmosphere to form the film based on HfS 2 A hole transport layer of (a);
(3) In the step (2), the HfS 2 Spin-coating an active layer precursor solution on the hole transport layer, drying, and annealing at 100-120 ℃ for 7-10 minutes to obtain an active layer;
(4) Spin-coating an electron transport layer precursor solution on the active layer in the step (3) to form an electron transport layer;
(5) And (5) evaporating a cathode layer on the electron transport layer in the step (4).
5. The production method according to claim 4, wherein the HfS of step (2) 2 The preparation method of the precursor solution comprises the following steps: hfS is added 2 Adding the powder into an isopropanol solvent, and performing ultrasonic dispersion in an ice bath; then centrifugating to obtain supernatant fluid which is HfS 2 A precursor liquid.
6. The method of claim 5, wherein the HfS is 2 The mass-to-volume ratio of the powder to the isopropanol solvent is 50mg:2 to 5mL.
7. The method for preparing a polyurethane foam according to claim 5, wherein the time for ultrasonic dispersion is 10 to 20h.
8. The method according to claim 5, wherein the rotation speed of the centrifugation is 3000 to 5000rpm, and the time of the centrifugation is 15 to 30min.
9. The production method according to claim 4, wherein the hole transport layer after the annealing treatment in the step (2) is subjected to plasma treatment for 0 to 30 minutes.
10. The method according to claim 4, wherein an additive DIO is contained in the active layer precursor liquid in the step (3).
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105489660A (en) * | 2014-10-02 | 2016-04-13 | 三星电子株式会社 | Stretchable optoelectronic device, method of manufacturing the same, and apparatus, light-emitting device, sensor system, and sensor circuit including the stretchable optoelectronic device |
| CN109021214A (en) * | 2018-05-31 | 2018-12-18 | 华南理工大学 | The n-type conjugated polymer and its application in organic electro-optic device that base side chain containing oligomeric ethylene glycol modifies benzene-naphthalene diimide unit |
| CN111883660A (en) * | 2020-08-26 | 2020-11-03 | 中国科学院重庆绿色智能技术研究院 | Fluorinated fused ring electron acceptor-based oligomer small-molecule solar cell and preparation method thereof |
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| CN109728166B (en) * | 2018-12-10 | 2022-02-22 | 太原理工大学 | Methylamine lead iodine perovskite solar cell containing organic luminescent micromolecular interface modification layer |
| CN111883662B (en) * | 2020-08-28 | 2022-11-08 | 电子科技大学 | Organic solar cell based on rotary annealing process and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105489660A (en) * | 2014-10-02 | 2016-04-13 | 三星电子株式会社 | Stretchable optoelectronic device, method of manufacturing the same, and apparatus, light-emitting device, sensor system, and sensor circuit including the stretchable optoelectronic device |
| CN109021214A (en) * | 2018-05-31 | 2018-12-18 | 华南理工大学 | The n-type conjugated polymer and its application in organic electro-optic device that base side chain containing oligomeric ethylene glycol modifies benzene-naphthalene diimide unit |
| CN111883660A (en) * | 2020-08-26 | 2020-11-03 | 中国科学院重庆绿色智能技术研究院 | Fluorinated fused ring electron acceptor-based oligomer small-molecule solar cell and preparation method thereof |
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