CN113690224A - Ultra-low power semiconductor power device - Google Patents
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- CN113690224A CN113690224A CN202111137541.5A CN202111137541A CN113690224A CN 113690224 A CN113690224 A CN 113690224A CN 202111137541 A CN202111137541 A CN 202111137541A CN 113690224 A CN113690224 A CN 113690224A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 38
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 62
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 49
- 239000010703 silicon Substances 0.000 claims abstract description 40
- 229910000859 α-Fe Inorganic materials 0.000 claims abstract description 36
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 25
- 239000000956 alloy Substances 0.000 claims abstract description 25
- 239000002184 metal Substances 0.000 claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000011347 resin Substances 0.000 claims abstract description 15
- 229920005989 resin Polymers 0.000 claims abstract description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052802 copper Inorganic materials 0.000 claims abstract description 12
- 239000010949 copper Substances 0.000 claims abstract description 12
- 230000005389 magnetism Effects 0.000 claims description 33
- 239000000919 ceramic Substances 0.000 claims description 8
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 14
- 230000000694 effects Effects 0.000 abstract description 11
- 239000000945 filler Substances 0.000 abstract description 5
- 229920006267 polyester film Polymers 0.000 abstract description 5
- 230000005670 electromagnetic radiation Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000012546 transfer Methods 0.000 description 15
- 230000004907 flux Effects 0.000 description 8
- 238000001816 cooling Methods 0.000 description 6
- 230000000737 periodic effect Effects 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000005457 optimization Methods 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
- H01L23/4924—Bases or plates or solder therefor characterised by the materials
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- Engineering & Computer Science (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
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Abstract
The invention discloses an ultra-low power semiconductor power device, which structurally comprises a metal target sheet, a silicon frame, an alloy sheet, a radiating fin and a copper base, wherein the metal target sheet is arranged in the silicon frame and is jointed and connected with the silicon frame, the silicon frame is connected with the alloy sheet, the bottom end of the alloy sheet is jointed with the radiating fin, and the alloy sheet and the radiating fin are mutually connected, and the ultra-low power semiconductor power device has the following effects: the magnetic field is separated by combining ferrite and adopting an air gap frame structure with a polyester film resin material as a filler, the electromagnetic radiation and the heating condition can be reduced by the brand new geometric shape of the distributed air gaps, the power loss is obviously reduced by arranging a plurality of air gaps in the middle position, and the power loss is reduced, so that the problems of small current capacity, large electric quantity loss and low voltage resistance of the conventional semiconductor power device are solved.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to an ultra-low power semiconductor power device.
Background
The power semiconductor device is also called as a power electronic device, namely, the power semiconductor device which carries out power processing and has the capability of processing high voltage and large current, and the semiconductor device has wide application fields and great requirements, wherein the thyristor is a semi-controlled device, the bearing voltage and current capacity are the highest in all devices, and the application demand of the low-power semiconductor device in the aspect of communication movement is higher, the switch has high speed, high input impedance, good thermal stability, small required driving power, simple driving circuit, high working frequency, no secondary breakdown problem, but has the disadvantages of small current capacity, large electricity consumption and low voltage resistance, and is generally only suitable for power electronic devices with lower power, therefore, an ultra-low power semiconductor power device needs to be developed to solve the problems of small current capacity, large electric quantity loss and low withstand voltage of the conventional semiconductor power device.
Summary of the invention
Aiming at the defects of the prior art, the invention is realized by the following technical scheme: the ultra-low power semiconductor power device structurally comprises a metal target sheet, a silicon frame, an alloy sheet, a radiating fin and a copper base, wherein the metal target sheet is arranged in the silicon frame and is attached and connected with the silicon frame, the silicon frame is connected with the alloy sheet, the bottom end of the alloy sheet is attached and connected with the radiating fin, the radiating fin is arranged above the copper base, the metal target sheet is an introducing structure of the semiconductor power device, current is introduced into the structure through the target sheet made of metal to realize structural operation, the silicon frame is used as a shell of the structure, the silicon power device has the advantages that in a monocrystalline silicon structure formed by the silicon frame, each silicon atom forms four covalent bonds with four silicon atoms around the silicon atom, so the crystal structure is very stable, the silicon atoms can form four covalent bonds, the four covalent bonds are determined by the chemical nature of silicon or the positions in a periodic table, and the atomic number of the silicon is fourteen, in the periodic table of elements, the silicon atom is in the IV group, the silicon atom has fourteen electrons, the outermost shell has four electrons, therefore, when the silicon forms covalent bonds with other elements, the silicon is tetravalent, which is the reason of silicon stability, and the structure is oxidized to form a silicon oxide film structure on the outer layer of the structure, the silicon oxide film structure has good insulation, the heat sink is used for cooling the structure, the structure does not adopt a sliding part, when the current passes through the structure, the structure runs by using direct current, heat transfer can be generated between two ends, the heat can be transferred from one end to the other end, so that temperature difference is generated to form a cold and hot end, but the semiconductor has resistance, when the current passes through the semiconductor, the heat can be generated, so that the heat transfer can be influenced, and the heat between two polar plates can also carry out reverse heat transfer through air and the semiconductor material, when the cold and hot ends reach a certain temperature difference, the two heat transfer amounts are equal, the balance point can be reached, the positive and reverse heat transfer can be mutually offset, at the moment, the temperature of the cold and hot ends can not be continuously changed, and therefore the purpose of cooling is achieved.
As a further optimization of the technical scheme, the alloy sheet comprises a sheet sleeve, an anode, a cathode, magnetic isolating rings and ferrite cores, wherein the sheet sleeve is connected with the anode and the cathode in a penetrating manner, the anode and the cathode are arranged at intervals, the magnetic isolating rings are arranged in the sheet sleeve, the ferrite cores are distributed and arranged between the magnetic isolating rings, the sheet sleeve is a basic structure of the alloy sheet, a control circuit which is structured by the anode and the cathode and is also called a trigger circuit is formed, when the anode and the cathode bear forward voltage, a switch in the control circuit is closed, the forward voltage is also applied to the control electrode, the structural circuit is switched on, when reverse voltage is applied between the anode and the cathode, no matter the voltage is applied to the control electrode, the structural current is cut off at the moment. If the control electrode is applied with a reverse voltage, the structural circuit is not conducted whether the main circuit is applied with a forward voltage or a reverse voltage.
As a further optimization of the technical scheme, the magnetism isolating ring comprises a magnetic conduction block, a magnetic guiding tube and a permanent magnet, wherein the top end of the magnetic conduction block is provided with the magnetic guiding tube in a ring shape, the middle end of the magnetic guiding tube is connected with the permanent magnet in a surrounding manner, the magnetism isolating ring is mainly used for reducing the penetration of a magnetic field generated by current in a structure into other structures, the structure is additionally provided with the magnetic conduction block with strong magnetism and the magnetic guiding tube with the same magnetism, the magnetic guiding tube is matched with the permanent magnet to guide a magnetic circuit at the periphery and isolate the magnetic circuit in the middle, the structure utilizes a plurality of layers of metal with higher magnetic conductivity as the magnetic conduction block to form a shielding cover for the permanent magnet with very high strength by combining the peak magnetic conductivity, the permanent magnet can keep high remanence for a long time in an open circuit state, and the two are combined to ensure that the magnetism isolating ring can effectively reduce a magnetic flux effect and reduce radiation, thereby reducing power loss.
As a further optimization of the technical solution, the ferrite core comprises ferrite, an air gap frame, and ceramic plates, the ferrite is attached to the air gap frame in a step-like distribution, the ceramic plates are disposed at the end of the bottom of the ferrite, the ferrite is formed by sintering iron oxide in combination with other ingredients, and is a metal oxide with soft magnetism, so called soft magnetism, because the residual magnetic field of the ferrite is very small or almost zero after the magnetizing magnetic field disappears, and the ferrite is used as a main structure, so that the gyromagnetic property generated in the process of propagating electromagnetic waves in a certain direction in the material under the action of two perpendicular direct current magnetic fields and electromagnetic wave magnetic fields can influence the polarization plane of the electromagnetic waves to rotate around the propagation direction continuously, and the air gap frame structure using polyester film resin material as filler is used to separate the magnetic fields, and the power loss is reduced.
As a further optimization of the technical scheme, the air gap frame comprises a first air gap layer, a resin layer and a second air gap layer, the resin layer is arranged at the bottom end of the first air gap layer at intervals, the resin layer and the second air gap layer are distributed at intervals, and the first air gap layer and the second air gap layer are distributed in a stepped and layered manner.
Advantageous effects
The ultra-low power semiconductor power device has the advantages of reasonable design, strong functionality and the following beneficial effects:
the magnetic circuit is guided at the periphery by the magnetism isolating ring and is isolated in the middle, the structure of the magnetic circuit utilizes a plurality of layers of metal with higher magnetic conductivity as the magnetic conducting block to combine the peak magnetic conductivity with the permanent magnet with very high strength to form a shielding cover, the permanent magnet can keep high remanence for a long time in an open circuit state, and the permanent magnet are combined with each other to ensure that the magnetism isolating ring can effectively reduce the magnetic flux effect and reduce radiation so as to reduce power loss; the existing traditional power ferrite materials can not be used in the frequency range of MHz, compared with the low-frequency state, the ferrite can generate great loss under the high-frequency condition, the ferrite is used as a magnetic core as a decisive factor for improving the efficiency, the adoption of a single air gap is a common technology for delaying the saturation of the magnetic core and improving the performance at present, however, the single air gap with quite large size can cause higher fringe magnetic flux effect, particularly can cause additional copper loss under the high-frequency condition, and the air gap structure distributed by the air gap frame effectively prevents the magnetic field from radiating to the environment.
The invention can enable the gyromagnetic force generated by the electromagnetic wave under the action of two mutually vertical direct current magnetic fields and electromagnetic wave magnetic fields in the material in the process of propagating in a certain direction to influence the polarization surface of the electromagnetic wave to enable the electromagnetic wave to continuously rotate around the propagation direction, and the magnetic field is separated by combining an air gap frame structure adopting a polyester film resin material as a filler.
Drawings
Other features, objects and advantages of the invention will become more apparent upon reading of the detailed description of non-limiting embodiments with reference to the following drawings:
FIG. 1 is a schematic diagram of a side view structure of an ultra-low power semiconductor power device according to the present invention;
FIG. 2 is a side cross-sectional view of an alloy sheet structure of the present invention;
FIG. 3 is a side cross-sectional view of the magnetic barrier ring structure of the present invention;
FIG. 4 is a side cross-sectional view of a ferrite core structure of the present invention;
FIG. 5 is a side cross-sectional view of the air gap frame structure of the present invention;
in the figure: the magnetic field induction type ceramic target comprises a metal target sheet-1, a silicon frame-2, an alloy sheet-3, a heat radiating sheet-4, a copper base-5, a sheet sleeve-30, an anode-31, a cathode-32, a magnetic isolation ring-33, a ferrite core-34, a magnetic conduction block-330, a magnetic induction pipe-331, a permanent magnet-332, a ferrite-340, an air gap frame-341, a ceramic plate-342, a first air gap layer-3410, a resin layer-3412 and a second air gap layer-3413.
Detailed Description
In order to make the technical means, the original characteristics, the achieved purposes and the effects of the invention easy to understand, the following description and the accompanying drawings further illustrate the preferred embodiments of the invention.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "connected" and "connected" are to be interpreted broadly, e.g., as being fixed or detachable or integrally connected; can be mechanically or electrically connected; may be directly connected or indirectly connected through an intermediate. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Example 1
Referring to fig. 1-3, the present invention provides an embodiment of an ultra-low power semiconductor power device:
referring to fig. 1, a structure of an ultra-low power semiconductor power device includes a metal target 1, a silicon frame 2, an alloy sheet 3, a heat sink 4, and a copper base 5, the metal target 1 is disposed in the silicon frame 2 and is attached to the silicon frame 2, the silicon frame 2 is connected to the alloy sheet 3, the bottom of the alloy sheet 3 is attached to the heat sink 4 and is connected to the heat sink, the heat sink 4 is disposed above the copper base 5, the metal target 1 is an introduction structure of the semiconductor power device, a current is introduced into the structure through the metal target to realize structural operation, the silicon frame 2 is used as a housing of the structure, which has advantages that in a single crystal silicon structure composed of the silicon frame 2, each silicon atom forms four covalent bonds with four silicon atoms around the silicon atom, so that the crystal structure is very stable, the silicon atoms form four covalent bonds, which is the chemical nature of silicon, or, as determined by the position in the periodic table, the atomic number of silicon is fourteen, the silicon atom is located in group iv in the periodic table, the silicon atom has fourteen electrons, and the outermost shell has four electrons, so that silicon presents quadrivalence when forming covalent bond with other elements, which is the reason of silicon stability, and the silicon oxide film structure formed on the outer layer of the structure through oxidation has good insulation, the heat sink 4 is used for cooling the structure, the structure does not adopt sliding parts, when running with direct current, heat transfer occurs between two ends when current passes through the structure, heat is transferred from one end to the other end, thereby generating a temperature difference to form a cold-hot end, but the semiconductor has resistance to generate heat when current passes through the semiconductor, thereby affecting heat transfer, and heat between two polar plates can also transfer reversely through air and the semiconductor material itself, when the cold end and the hot end reach a certain temperature difference, the two heat transfer amounts are equal, a balance point is reached, the positive and reverse heat transfer amounts are mutually offset, and the temperature of the cold end and the hot end can not be continuously changed at the moment, so that the purpose of cooling is achieved.
Referring to fig. 2, the alloy sheet 3 includes a sheet sleeve 30, an anode 31, a cathode 32, a magnetic isolating ring 33, and a ferrite core 34, the sheet sleeve 30 is connected with the anode 31 and the cathode 32 in a penetrating manner, the anode 31 and the cathode 32 are arranged at intervals, the magnetic isolating ring 33 is arranged in the sheet sleeve 30, the ferrite cores 34 are arranged between the magnetic isolating rings 33, the sheet sleeve 30 is a basic structure of the alloy sheet 3, and a control circuit, also called a trigger circuit, having a structure formed by the anode 31 and the cathode 32 is used for closing a switch in the control circuit when the anode 31 and the cathode 32 bear a forward voltage, so that the forward voltage is applied to the control electrode, which indicates that the structural circuit is turned on, and when a reverse voltage is applied between the anode 31 and the cathode 32, no matter the voltage is applied to the control electrode, the structural current is turned off. If the control electrode is applied with a reverse voltage, the structural circuit is not conducted whether the main circuit is applied with a forward voltage or a reverse voltage.
Referring to fig. 3, the magnetism isolating ring 33 includes a magnetic block 330, a magnetic guiding tube 331, and a permanent magnet 332, the top of the magnetic block 330 is provided with the magnetic guiding tube 331 in a ring shape, the middle of the magnetic guiding tube 331 is connected to a permanent magnet 332 in a surrounding manner, the magnetism isolating ring 33 is mainly used for reducing the penetration of the magnetic field generated by the current in the structure to other structures, the structure is provided with the magnetic block 330 with strong magnetism and the magnetic guiding tube 331 with magnetism, the magnetic guiding tube is matched with the permanent magnet 332 to guide the magnetic circuit at the periphery and partition the magnetic circuit in the middle, the structure uses several layers of metal with higher magnetic conductivity as the magnetic block 330 to form a shielding cover in combination with the permanent magnet 332 with high strength in combination with peak magnetic conductivity, the permanent magnet 332 can maintain high residual magnetism for a long time in an open circuit state, and the two are combined with each other to enable the magnetism isolating ring 33 to effectively reduce the magnetic flux effect and reduce the radiation, thereby reducing the power loss.
Example 2
Referring to fig. 1-5, the present invention provides an embodiment of an ultra-low power semiconductor power device:
referring to fig. 1, a structure of an ultra-low power semiconductor power device includes a metal target 1, a silicon frame 2, an alloy sheet 3, a heat sink 4, and a copper base 5, the metal target 1 is disposed in the silicon frame 2 and is attached to the silicon frame 2, the silicon frame 2 is connected to the alloy sheet 3, the bottom of the alloy sheet 3 is attached to the heat sink 4 and is connected to the heat sink, the heat sink 4 is disposed above the copper base 5, the metal target 1 is an introduction structure of the semiconductor power device, a current is introduced into the structure through the metal target to realize structural operation, the silicon frame 2 is used as a housing of the structure, which has advantages that in a single crystal silicon structure composed of the silicon frame 2, each silicon atom forms four covalent bonds with four silicon atoms around the silicon atom, so that the crystal structure is very stable, the silicon atoms form four covalent bonds, which is the chemical nature of silicon, or, as determined by the position in the periodic table, the atomic number of silicon is fourteen, the silicon atom is located in group iv in the periodic table, the silicon atom has fourteen electrons, and the outermost shell has four electrons, so that silicon presents quadrivalence when forming covalent bond with other elements, which is the reason of silicon stability, and the silicon oxide film structure formed on the outer layer of the structure through oxidation has good insulation, the heat sink 4 is used for cooling the structure, the structure does not adopt sliding parts, when running with direct current, heat transfer occurs between two ends when current passes through the structure, heat is transferred from one end to the other end, thereby generating a temperature difference to form a cold-hot end, but the semiconductor has resistance to generate heat when current passes through the semiconductor, thereby affecting heat transfer, and heat between two polar plates can also transfer reversely through air and the semiconductor material itself, when the cold end and the hot end reach a certain temperature difference, the two heat transfer amounts are equal, a balance point is reached, the positive and reverse heat transfer amounts are mutually offset, and the temperature of the cold end and the hot end can not be continuously changed at the moment, so that the purpose of cooling is achieved.
Referring to fig. 2, the alloy sheet 3 includes a sheet sleeve 30, an anode 31, a cathode 32, a magnetic isolating ring 33, and a ferrite core 34, the sheet sleeve 30 is connected with the anode 31 and the cathode 32 in a penetrating manner, the anode 31 and the cathode 32 are arranged at intervals, the magnetic isolating ring 33 is arranged in the sheet sleeve 30, the ferrite cores 34 are arranged between the magnetic isolating rings 33, the sheet sleeve 30 is a basic structure of the alloy sheet 3, and a control circuit, also called a trigger circuit, having a structure formed by the anode 31 and the cathode 32 is used for closing a switch in the control circuit when the anode 31 and the cathode 32 bear a forward voltage, so that the forward voltage is applied to the control electrode, which indicates that the structural circuit is turned on, and when a reverse voltage is applied between the anode 31 and the cathode 32, no matter the voltage is applied to the control electrode, the structural current is turned off. If the control electrode is applied with a reverse voltage, the structural circuit is not conducted whether the main circuit is applied with a forward voltage or a reverse voltage.
Referring to fig. 3, the magnetism isolating ring 33 includes a magnetic block 330, a magnetic guiding tube 331, and a permanent magnet 332, the top of the magnetic block 330 is provided with the magnetic guiding tube 331 in a ring shape, the middle of the magnetic guiding tube 331 is connected to a permanent magnet 332 in a surrounding manner, the magnetism isolating ring 33 is mainly used for reducing the penetration of the magnetic field generated by the current in the structure to other structures, the structure is provided with the magnetic block 330 with strong magnetism and the magnetic guiding tube 331 with magnetism, the magnetic guiding tube is matched with the permanent magnet 332 to guide the magnetic circuit at the periphery and partition the magnetic circuit in the middle, the structure uses several layers of metal with higher magnetic conductivity as the magnetic block 330 to form a shielding cover in combination with the permanent magnet 332 with high strength in combination with peak magnetic conductivity, the permanent magnet 332 can maintain high residual magnetism for a long time in an open circuit state, and the two are combined with each other to enable the magnetism isolating ring 33 to effectively reduce the magnetic flux effect and reduce the radiation, thereby reducing the power loss.
Referring to fig. 4, the ferrite core 34 includes a ferrite 340, an air gap frame 341, and a ceramic plate 342, the ferrite 340 is attached to the air gap frame 341 in a step-like distribution, the ceramic plate 342 is disposed at the bottom end of the ferrite 340, the ferrite 340 is formed by sintering iron oxide combined with other ingredients, and is a metal oxide with soft magnetism, so called soft magnetism, because the residual magnetic field of the ferrite 340 is very small or almost zero after the magnetizing magnetic field disappears, and the gyromagnetic property generated by the electromagnetic wave under the action of two perpendicular direct current magnetic fields and electromagnetic wave magnetic fields in the propagation process of a certain direction inside the material can influence the polarization plane of the electromagnetic wave to rotate around the propagation direction continuously by using the ferrite 340 as the main structure, and the air gap frame 341 structure using polyester film resin material as filler separates the magnetic field, and the power loss is reduced.
Referring to fig. 5, the air gap frame 341 includes a first air gap layer 3410, a resin layer 3412, and a second air gap layer 3413, the resin layer 3412 is disposed at a bottom end of the first air gap layer 3410 at an interval, the resin layer 3412 and the second air gap layer 3413 are spaced apart from each other, and the first air gap layer 3410 and the second air gap layer 3413 exhibit a step-level distribution, which is characterized in that a magnetic flux effect at an edge can be reduced, and a power loss can be reduced by using a plurality of air gap structures.
The specific realization principle is as follows:
the permanent magnet 332 can keep high remanence for a long time in an open circuit state, the ferrite 340 is used as a main body structure, the gyromagnetic property generated in the process that electromagnetic waves under the action of two mutually perpendicular direct current magnetic fields and electromagnetic wave magnetic fields propagate in a material in a certain direction influences the polarization surface of the electromagnetic waves to enable the electromagnetic waves to continuously rotate around the propagation direction, the magnetic fields are separated by combining an air gap frame 341 structure which adopts a polyester film resin material as a filler, the power loss is reduced, and the two are combined with each other to enable the magnetism isolating ring 33 to effectively reduce the magnetic flux effect and reduce the radiation, so that the power loss is reduced; the existing traditional power ferrite materials can not be used in the frequency range of MHz, compared with the low-frequency state, the ferrite can generate great loss under the high-frequency condition, the ferrite is used as a magnetic core as a decisive factor for improving the efficiency, and the adoption of a single air gap is a common technology for delaying the saturation of the magnetic core and improving the performance at present, however, the single air gap with quite large size can cause higher fringe magnetic flux effect, particularly can cause extra copper loss under the high-frequency condition, the air gap structure distributed by the air gap frame 341 effectively prevents the radiation of a magnetic field to the environment, can reduce the power loss by 70% at most, and solves the problems of small current capacity, large electric quantity loss and low withstand voltage of the existing semiconductor power device.
While there have been shown and described what are at present considered the fundamental principles of the invention, the essential features and advantages thereof, it will be understood by those skilled in the art that the present invention is not limited by the embodiments described above, which are merely illustrative of the principles of the invention, but rather, is capable of numerous changes and modifications in various forms without departing from the spirit or essential characteristics thereof, and it is intended that the invention be limited not by the foregoing descriptions, but rather by the appended claims and their equivalents.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (5)
1. The utility model provides an ultra-low power semiconductor power device, its structure includes metal target piece (1), silicon frame (2), alloy piece (3), fin (4), copper base (5), its characterized in that:
metal target piece (1) locate in silicon frame (2) and laminate and connect silicon frame (2), silicon frame (2) be connected with alloy piece (3), alloy piece (3) bottom laminating fin (4) and the two interconnect, fin (4) locate copper base (5) top position.
2. An ultra low power semiconductor power device as claimed in claim 1, wherein: the alloy sheet (3) comprises a sheet sleeve (30), an anode (31), a cathode (32), a magnetism isolating ring (33) and a ferrite magnetic core (34), wherein the anode (31) and the cathode (32) are connected with the sheet sleeve (30) in a penetrating manner, the anode (31) and the cathode (32) are arranged at intervals, the magnetism isolating ring (33) is arranged in the sheet sleeve (30), and the ferrite magnetic cores (34) are distributed and arranged between the magnetism isolating ring (33).
3. An ultra low power semiconductor power device as claimed in claim 2, wherein: the magnetism isolating ring (33) comprises a magnetism conducting block (330), a magnetism guiding pipe (331) and a permanent magnet (332), wherein the magnetism guiding pipe (331) is arranged at the top end of the magnetism conducting block (330) in a ring shape, and the permanent magnet (332) is connected to the middle end of the magnetism guiding pipe (331) in a surrounding mode.
4. An ultra low power semiconductor power device as claimed in claim 2, wherein: the ferrite core (34) comprises ferrite (340), an air gap frame (341) and a ceramic plate (342), wherein the ferrite (340) is in a step-shaped distribution and is attached to the air gap frame (341), and the ceramic plate (342) is arranged at the tail end of the bottom of the ferrite (340).
5. An ultra low power semiconductor power device as claimed in claim 4, wherein: the air gap frame (341) comprises a first air gap layer (3410), a resin layer (3412) and a second air gap layer (3413), the resin layer (3412) is arranged at the bottom end of the first air gap layer (3410) at intervals, and the resin layer (3412) and the second air gap layer (3413) are distributed at intervals.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111137541.5A CN113690224A (en) | 2021-09-27 | 2021-09-27 | Ultra-low power semiconductor power device |
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