CN113690066A - Graphene quantum dot/few-layer Ti3C2TxPreparation method and application of composite material - Google Patents
Graphene quantum dot/few-layer Ti3C2TxPreparation method and application of composite material Download PDFInfo
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims abstract description 26
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 22
- 239000010410 layer Substances 0.000 claims abstract description 41
- 229910009819 Ti3C2 Inorganic materials 0.000 claims abstract description 27
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims abstract description 26
- 238000002360 preparation method Methods 0.000 claims abstract description 12
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- VVNXEADCOVSAER-UHFFFAOYSA-N lithium sodium Chemical compound [Li].[Na] VVNXEADCOVSAER-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910001415 sodium ion Inorganic materials 0.000 claims abstract description 4
- 239000003990 capacitor Substances 0.000 claims abstract description 3
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Abstract
The invention discloses a graphene quantum dot/few-layer Ti3C2TxA preparation method and application of the composite material. Firstly, preparing few or single-layer Ti by microwave controllable stripping3C2TxThen the graphene quantum dots are compounded to form the stable lamellar graphene quantum dotsThe structure is made of a composite material without stacking and with a high capacitance value; the composite material has very wide prospect in the fields of super capacitors, lithium sodium ion batteries and the like. According to the invention, by controlling microwave parameters, the damage to the transverse size of the lamella in the stripping process can be reduced as much as possible, so that a uniform large-size lamella is obtained; in the aspect of synthesizing the composite material, the traditional method of compounding the graphene sheet layer and MXene is abandoned, the graphene quantum dots with changed electric property are selected, and the characteristics of high capacitance value and nano-scale particle size of the quantum dots are utilized to be combined with Ti under the action of static electricity3C2TxAssembling again to form few sheets; the preparation process is controllable, the product structure is stable, and the industrial production is facilitated.
Description
Technical Field
The invention relates to graphene quantum dot/few-layer Ti3C2TxA preparation method and application of a composite material belong to the technical field of 2D nano material preparation.
Background
Two-dimensional nano material MXene, a novel transition metal carbide and nitride with a layered structure, and the general formula is Mn+1XnTx. Wherein M represents an early transition metal, X represents a C or N element, TxRepresenting functional groups (-OH, -F, -O, etc.) attached to MXene's surface resulting from chemical etching of the precursor MAX phase. With the increasing energy crisis, MXene is considered to be a promising material in the field of energy storage, and can be used in many directions, such as supercapacitors, lithium/sodium ion batteries, transparent conductive coatings, semiconductors, and the like. Of these, MXene is of a wide variety, and the more mature Ti was studied3C2Tx. The work selects an environment-friendly etching agent NaHF2Etched Ti3C2TxThe lamellae are in the order of tens or even hundreds. The method of ultrasonic oscillation or centrifugal peeling is adopted to peel off the multiple layers of MXene, and the method is a mechanical method, so that the sheets with similar sizes and uniform thickness cannot be obtained controllably. The transverse dimension of MXene is more easily damaged by the ultrasonic oscillation method, and the efficiency of the centrifugal treatment method is higherLow and less controllable. In addition to ultrasonic centrifugation, there is also a technique of shaking and centrifugal stripping after microwave heat preservation, but up to now, there is no technique of completely adopting microwave stripping. In the aspect of application, self-weight stacking caused by the structure of MXene always limits that MXene cannot achieve the theoretically-achievable optimal performance. The invention is based on the interpositioned Cr of graphene layers3+The oxidation and reduction of (a) to generate oxygen, and promote the increase of the graphene layer spacing to generate a thought [ reference: from-Temperature interaction and 1000-Fold Chemical Expansion for Scalable Preparation of High-Quality graphics; interlayer water vaporization is utilized to push interlayer spacing to increase, controllable stripping is completed under the action of microwaves, and meanwhile, graphene quantum dots are introduced to form a composite material, so that a uniform stable channel is formed and a large capacitance value is provided.
Disclosure of Invention
The invention aims to provide graphene quantum dot/few-layer Ti3C2TxA process for preparing composite material includes such steps as controllable stripping by microwave method to prepare Ti layer or Ti layer3C2TxThen, the graphene quantum dots are compounded to form a composite material which has a stable layered channel, no stacking structure and a high capacitance value; the composite material has very wide prospect in the fields of super capacitors, lithium sodium ion batteries and the like.
The stripping process of the invention mainly depends on the energy of microwave to instantaneously vaporize Ti3C2TxThe interlayer water of (2) breaks the layered structure under the expansion work of the steam to form a few or single-sheet layer Ti3C2TxGreatly increase Ti3C2TxSpecific surface area of (2). By controlling the microwave parameters, the damage to the transverse dimension of the sheet layer in the stripping process can be reduced as much as possible, so that a uniform large-size sheet layer is obtained. In the aspect of synthesizing composite materials, the method abandons the traditional method of compounding graphene sheet layers and MXene, selects graphene quantum dots capable of changing electric property, utilizes the characteristics of high capacitance value and nano-scale particle size of the quantum dots, and combines the quantum dots with Ti under the action of static electricity3C2TxThen the assembly is carried out again, and the assembly,the composite material with few lamella, uniform and stable lamellar channels, high specific surface area and higher capacitance is formed, the preparation process is controllable, the product structure is stable, and the industrial production is facilitated.
The invention provides a graphene quantum dot/few-layer Ti3C2TxThe preparation method of the composite material comprises the following steps:
(1) weighing 0.2-0.3 g of Ti3C2TxPutting the powder into a crucible with the volume of 5 mL;
(2) preparing a 20mL large crucible, and uniformly and fully spreading copper oxide powder in the crucible so as to quickly heat and absorb redundant energy; placing the small crucible treated in the step (1) in a large crucible, and treating the small crucible for 30-120 s by using a microwave oven with the power of 800-1000W;
(3) collecting the powder obtained in the step (2), namely Ti with few layers or single layer3C2Tx;
Stripped Ti3C2TxThe ultra-thick layer structure of (a) is destroyed; post-exfoliation Ti with reduced lamellae3C2TxThe thickness of the lamella is 3-5 nm.
(4) Modifying the graphene quantum dots to make the graphene quantum dots have positive charges; stirring the Ti and the stripped Ti at normal temperature3C2TxAnd carrying out electrostatic self-assembly to form the composite material.
Step (4) preparing graphene quantum dots/few-layer Ti through electrostatic self-assembly3C2TxA composite material comprising the steps of:
(1) weighing graphene quantum dots, modifying with polydimethyl diene ammonium chloride (PDDA), and stirring for 24h to make the graphene quantum dots have positive charges; and obtaining a modified solution dispersed with the modified quantum dots.
(2) Weighing the prepared Ti-less/single-layer according to the filler ratio of the composite material of 5-25%3C2TxSlowly adding the powder into the modified solution obtained in the step (1) and stirring for 24 hours again;
(3) carrying out suction filtration on the solution after secondary stirring by using a sand core funnel to obtain a filter cake; placing the mixture in a vacuum oven for 8-10 h at 60 ℃ for drying; and collecting the powder to obtain the composite material.
The transverse size of the composite material sheet layer is still uniform and is about 4-5 mu m, and the graphene quantum dots are uniformly distributed on the few/single Ti layer under the action of static electricity3C2TxBetween the surface and the layers.
In the method, the microwave method utilizes interlayer water vaporization to push the lamella to realize stripping, and adds trace water outside and controls microwave parameters to avoid great damage of transverse dimension as much as possible.
In the method, the requirement can be met by using a household microwave oven, the microwave working parameter is 800-1000W, and the processing time is 30-120 s.
In the above method, the stripped Ti3C2TxSince the original bulk of the layered structure is opened up, the 2 θ angle disappears on the XRD pattern, in a loose and uniform distribution of few/monolithic distributions in the SEM image. Ti prepared by the above method3C2TxThe graphene quantum dot composite material can be seen to be evenly paved with quantum dot particles on MXene sheet layers under SEM and TEM.
The invention provides the graphene quantum dot/few-layer Ti prepared by the method3C2TxCutting square foam nickel with the size of 2 multiplied by 2cm from the composite material; compounding the composite material with PVDF and acetylene black in a mass ratio of 8:1:1 to form slurry, and coating the slurry on foamed nickel with a coating amount of 3.8-4.2mg/cm2(ii) a The performance of the composite material is tested in an electrolytic cell of a three-electrode system by taking mercury/mercury oxide as a reference electrode and a platinum electrode as a counter electrode. Graphene quantum dot/few-layer Ti3C2TxThe composite material electrode shows a high-quality capacitance of 262-343F/g under a current density of 1A/g. The electrode prepared from the composite material still maintains 100% of capacitance retention rate after 10000 charge-discharge cycles.
The invention has the beneficial effects that:
compared with the prior art, the stripped Ti of the invention3C2TxThe few/single layer has larger grain diameter, complete lamellar structure, fewer layers, stability and controllability and increased specific surface area. And stripped Ti3C2TxThe few/single-layer structure and the graphene quantum dots are assembled to form the composite material, so that a larger specific surface area can be provided, and the structure of few layers is favorable for directional transmission of ions. The modified graphene quantum dots can be uniformly distributed between layers and on the surface of MXene due to the characteristics of positive charge and small particle size, the advantages of high capacitance value of the graphene quantum dots and the advantages of MXene layered structure are integrated, the self-weight stacking of MXene is avoided due to the composite structure of the material, the long cycle life can be ensured on the premise of providing a high capacitance value, and the material has a very wide prospect in the fields of supercapacitors and lithium sodium batteries.
Drawings
FIG. 1 is a schematic view of a multilayer Ti film before and after microwave stripping in example 13C2Tx(FIG. a) with few/single Ti layers3C2Tx(FIG. b) comparative SEM image.
FIG. 2 shows the single/few-lamellar Ti after microwave successful exfoliation in example 13C2TxAFM images (2b, 2c) and XRD (2a) patterns of (a).
Fig. 3 is an SEM image of the composite material in example 7.
FIG. 4 is a graph of the electrochemical performance of the composite material of example 8, the charge-discharge curve of the electrode prepared from the three materials (FIG. a) and the capacity retention rate after 10000 charge-discharge cycles (FIG. b).
Detailed Description
The technical solution of the present invention is further described below with specific examples, but the scope of the present invention is not limited thereto.
The examples do not show the specific experimental steps or conditions, and the operation or conditions of the conventional experimental steps described in the literature in the field can be followed. The reagents or instruments used are not indicated by manufacturers, and are all conventional reagent products which can be obtained commercially.
Example 1
Selecting NaHF in environment-friendly mode2Etching to obtain Ti3C2TxPowder; 0.3g of Ti was weighed3C2TxAdding the powder into a crucible with the volume of 5 mL; prepare a 20mL of large crucible is filled with copper oxide powder, and the small crucible is placed in the large crucible; and (3) placing the combined large crucible and the combined small crucible in a household microwave oven, treating for 90s under the power of 800W, and collecting the treated powder.
Etched Ti3C2TxAnd Ti after microwave stripping3C2TxAn SEM image of (a) is shown in figure 1. Ti after etching can be seen3C2TxThe Ti is in an accordion shape and has obvious multilayer laminated structure, and the Ti is stripped by microwave3C2TxAre small/monolithic scattered on the substrate and are almost uniform in size. As shown in fig. 2, MXene after etching has an XRD pattern of 2 θ =7.1 °. However, after microwave exfoliation, the layered structure is significantly destroyed, exfoliated to a few or single layers, and the 2 θ angle in the XRD pattern disappears. Meanwhile, AFM images in FIG. 2 show that less Ti sheets are obtained after stripping3C2TxThe thickness is 3-5nm, thus proving the results of SEM and XRD.
Example 2
Selection of NaHF2Etching to obtain Ti3C2TxPowder; 0.3g of Ti was weighed3C2TxAdding the powder into a crucible with the volume of 5 mL; preparing a 20mL large crucible, fully spreading copper oxide powder in the large crucible, and placing a small crucible in the large crucible; and (3) placing the combined large crucible and the combined small crucible in a household microwave oven, treating for 60s under the power of 800W, and collecting the treated powder.
Example 3
Selection of NaHF2Etching to obtain Ti3C2TxPowder; 0.3g of Ti was weighed3C2TxAdding the powder into a crucible with the volume of 5 mL; preparing a 20mL large crucible, fully spreading copper oxide powder in the large crucible, and placing a small crucible in the large crucible; and (3) placing the combined large crucible and the combined small crucible in a household microwave oven, treating for 120s under the power of 800W, and collecting the treated powder.
Example 4
Selection of NaHF2Etching to obtain Ti3C2TxPowder; weighing 0.3gTi3C2TxAdding the powder into a crucible with the volume of 5 mL; preparing a 20mL large crucible, fully spreading copper oxide powder in the large crucible, and placing a small crucible in the large crucible; and (3) placing the combined large crucible and the combined small crucible in a household microwave oven, treating for 50s under the power of 1000W, and collecting the treated powder.
Example 5
Selection of NaHF2Etching to obtain Ti3C2TxPowder; 0.3g of Ti was weighed3C2TxAdding the powder into a crucible with the volume of 5 mL; preparing a 20mL large crucible, fully spreading copper oxide powder in the large crucible, and placing a small crucible in the large crucible; and (3) placing the combined large crucible and the combined small crucible in a household microwave oven, treating for 60s under the power of 1000W, and collecting the treated powder.
Example 6
Selection of NaHF2Etching to obtain Ti3C2TxPowder; 0.3g of Ti was weighed3C2TxAdding the powder into a crucible with the volume of 5 mL; preparing a 20mL large crucible, fully spreading copper oxide powder in the large crucible, and placing a small crucible in the large crucible; and (3) placing the combined large crucible and the combined small crucible in a household microwave oven, processing the combined large crucible and the combined small crucible under the power of 1000W for 80, and collecting the processed powder.
Example 7
PDDA modified graphene quantum dots are selected by the existing method and are provided with positive charges. Selecting 25mg of modified graphene quantum dot solution, and adding 0.32g of stripped Ti3C2TxAnd after stirring for 24 hours, carrying out suction filtration on the liquid by using a sand core funnel to obtain a filter cake. Drying the filter cake in a vacuum oven for 8h at the temperature of 60 ℃; and collecting the powder to obtain the composite material.
Fig. 3 is an SEM image of the composite material in example 7, wherein the large layer in the field of view is MXene, and the spherical particles attached to the surface are graphene quantum dots.
Example 8
PDDA modified graphene quantum dots are selected by the existing method and are provided with positive charges. Selecting 25mg of modified graphene quantum dot solution, and adding 0.23g of stripped Ti3C2TxAnd after stirring for 24 hours, carrying out suction filtration on the liquid by using a sand core funnel to obtain a filter cake. Drying the filter cake in a vacuum oven for 8h at the temperature of 60 ℃; and collecting the powder to obtain the composite material. FIG. 4 is a graph of the electrochemical performance of the composite material obtained in this example, and the capacitance of the composite material is 343F/g, which is much higher than that of MXene electrode, at a current density of 1A/g; and the capacity retention rate is still 100% after 10000 charge-discharge cycles.
Example 9
PDDA modified graphene quantum dots are selected by the existing method and are provided with positive charges. Selecting 25mg of modified graphene quantum dot solution, and adding 0.17g of stripped Ti3C2TxAnd after stirring for 24 hours, carrying out suction filtration on the liquid by using a sand core funnel to obtain a filter cake. Drying the filter cake in a vacuum oven for 8h at the temperature of 60 ℃; and collecting the powder to obtain the composite material.
Example 10
PDDA modified graphene quantum dots are selected by the existing method and are provided with positive charges. Selecting 25mg of modified graphene quantum dot solution, and adding 140mg of stripped Ti3C2TxAnd after stirring for 24 hours, carrying out suction filtration on the liquid by using a sand core funnel to obtain a filter cake. Drying the filter cake in a vacuum oven for 8h at the temperature of 60 ℃; and collecting the powder to obtain the composite material.
Claims (9)
1. Graphene quantum dot/few-layer Ti3C2TxThe preparation method of the composite material is characterized by comprising the following steps:
(1) weighing 0.2-0.3 g of Ti3C2TxPutting the powder into a crucible with the volume of 5 mL;
(2) preparing a 20mL large crucible, uniformly and fully spreading copper oxide powder in the large crucible, placing the small crucible treated in the step (1) in the large crucible, and treating the small crucible by using a microwave oven;
(3) collecting the powder obtained in the step (2), namely Ti with few layers or single layer3C2Tx;
(4) Modifying the graphene quantum dots to make the graphene quantum dots have positive charges; stirring at normal temperatureWith stripped Ti in an atmosphere of3C2TxAnd carrying out electrostatic self-assembly to form the composite material.
2. The graphene quantum dot/few-layer Ti of claim 13C2TxThe preparation method of the composite material is characterized by comprising the following steps: in the step (2), the microwave treatment is carried out for 30-120 s, and the microwave power is 800-1000W.
3. The graphene quantum dot/few-layer Ti of claim 13C2TxThe preparation method of the composite material is characterized by comprising the following steps: few-layer or single-layer Ti obtained in step (3)3C2TxThe thickness of the lamella is 3-5 nm.
4. The graphene quantum dot/few-layer Ti of claim 13C2TxThe preparation method of the composite material is characterized by comprising the following steps:
step (4) preparing graphene quantum dots/few-layer Ti through electrostatic self-assembly3C2TxA composite material comprising the steps of:
(1) weighing graphene quantum dots, modifying the graphene quantum dots by using PDDA (poly dimethyl diene ammonium chloride), and stirring for 24 hours to enable the graphene quantum dots to carry positive charges, so as to obtain a modified solution in which the modified quantum dots are dispersed;
(2) weighing the Ti-less/single-layer composite material prepared in the first step according to the filler ratio of the composite material of 5-25%3C2TxSlowly adding the powder into the modified solution obtained in the step (1) and stirring for 24 hours again;
(3) carrying out suction filtration on the solution after secondary stirring by using a sand core funnel to obtain a filter cake; placing the mixture in a vacuum oven for 8-10 h at 60 ℃ for drying; and collecting the powder to obtain the composite material.
5. The graphene quantum dot/few-layer Ti of claim 43C2TxThe preparation method of the composite material is characterized by comprising the following steps: the transverse size of the composite material sheet layer is uniform and is 4-6 mu m; the graphene quantum dots are electrostaticUniformly distributed in a few/single layer of Ti under the action of3C2TxBetween the surface and the layers.
6. Graphene quantum dot/few-layer Ti prepared by the method of any one of claims 1 to 53C2TxA composite material.
7. The graphene quantum dot/few-layer Ti of claim 63C2TxThe composite material is applied to a super capacitor or a lithium sodium ion battery.
8. Use according to claim 7, characterized in that: cutting square foam nickel with the size of 2 multiplied by 2 cm; compounding the composite material with PVDF and acetylene black in a mass ratio of 8:1:1 to form slurry, and coating the slurry on foamed nickel with a coating amount of 3.8-4.2mg/cm2(ii) a The performance of the composite material is tested in an electrolytic cell of a three-electrode system by taking mercury/mercury oxide as a reference electrode and a platinum electrode as a counter electrode.
9. Use according to claim 8, characterized in that: graphene quantum dot/few-layer Ti3C2TxThe composite material electrode shows a high-quality capacitance of 262-343F/g under a current density of 1A/g; the electrode prepared from the composite material still maintains 100% of capacitance retention rate after 10000 charge-discharge cycles.
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