CN113687215B - Method and equipment for improving contact precision of probe and wafer test point - Google Patents
Method and equipment for improving contact precision of probe and wafer test point Download PDFInfo
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- CN113687215B CN113687215B CN202110893589.2A CN202110893589A CN113687215B CN 113687215 B CN113687215 B CN 113687215B CN 202110893589 A CN202110893589 A CN 202110893589A CN 113687215 B CN113687215 B CN 113687215B
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- 239000000523 sample Substances 0.000 title claims abstract description 164
- 238000012360 testing method Methods 0.000 title claims abstract description 154
- 238000000034 method Methods 0.000 title claims abstract description 29
- 239000013078 crystal Substances 0.000 claims abstract description 68
- 238000004873 anchoring Methods 0.000 claims abstract description 7
- 230000000007 visual effect Effects 0.000 claims description 35
- 239000011159 matrix material Substances 0.000 claims description 14
- 230000009466 transformation Effects 0.000 claims description 14
- 235000012431 wafers Nutrition 0.000 description 113
- 238000001514 detection method Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000001179 sorption measurement Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000004590 computer program Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
- G01R31/2887—Features relating to contacting the IC under test, e.g. probe heads; chucks involving moving the probe head or the IC under test; docking stations
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
- G01R31/2891—Features relating to contacting the IC under test, e.g. probe heads; chucks related to sensing or controlling of force, position, temperature
Abstract
The application relates to an improvement probe and wafer test point connectA method of touch accuracy comprising the steps of: anchoring the first identification point in the world coordinate system and establishing a first coordinate system; aligning each test point on the crystal disk with the first identification point one by one, and calculating to obtain a coordinate set [ X ] of each test point on the first coordinate system a ,Y a ]The method comprises the steps of carrying out a first treatment on the surface of the Anchoring the second identification point on the crystal disc, and moving the crystal disc to enable the first identification point and the second identification point to be relatively aligned; establishing a second coordinate system in the world coordinate system based on the position of the second identification point; aligning the second identification points with the probe points on the probe card one by one, and calculating to obtain a coordinate set [ X ] of each probe point on a second coordinate system b ,Y b ]The method comprises the steps of carrying out a first treatment on the surface of the Calculate the coordinate set [ X a ,Y a ]And coordinate set [ X b ,Y b ]And determining the positional relationship of each probe point and each test point on the X, Y axis. The probe card and the first vision system are all in a fixed state all the time, so that the situation that the movement precision of the probe is unstable can not occur, and the alignment precision of the probe and the test point is improved.
Description
Technical Field
The present disclosure relates to the field of semiconductor testing devices, and in particular, to a method and an apparatus for improving contact accuracy between a probe and a wafer test point.
Background
Wafer refers to a silicon wafer used in the fabrication of silicon semiconductor integrated circuits, the starting material of which is silicon. The high-purity polycrystalline silicon is dissolved and then doped with silicon crystal seed, and then slowly pulled out to form cylindrical monocrystalline silicon. The silicon ingot is ground, polished, and sliced to form a silicon wafer, i.e., a wafer. Silicon wafers are round silicon sheets with a thickness of about 1mm (millimeter) or less, and currently, domestic wafer lines are mainly 8 inches and 12 inches. After wafer fabrication is complete, wafer testing, also known as die testing (die sort) or wafer sort, is a very important step. During the test, the electrical capability and circuit function of each chip can be detected.
The wafer test is to perform a needle test on each die on a chip, and a probe card is mounted on a tester, wherein the probe card is internally provided with a plurality of probes (probes) made of gold wires and thin like hair, and the die is provided with contact points (pads), which are also called test points, for being contacted with the probes (probes) for testing. The electrical characteristics of the die are tested by the contact of the probe and the test point, the unqualified die is marked, then when the wafer is cut into independent chips by the die unit, the unqualified die marked with the mark is eliminated by , and the next process is not performed, so that the manufacturing cost is not increased excessively.
Precision control is a critical content in the wafer testing process, and in related technical means, a microscope-assisted observation mode is generally adopted to observe contact between a probe and a wafer. The specific method comprises the following steps:
s1, observing a wafer by using a microscope arranged above a wafer disc, and acquiring visual field imaging information to be tested on the wafer;
s2, controlling the probe to move into the visual field area by using a probe seat;
s3, obtaining visual field imaging information of test points in a certain range on the wafer by using a high-magnification microscope;
s3, using a probe seat to control the probe heads of the probes to contact with all test points on the crystal disc one by one for detection;
s4, collecting, processing and storing detection signals of the probes by using a computer.
Aiming at the technical means, in the process of controlling the probe heads of the probes to contact with all the test points on the wafer disc one by one, a microscope is required to be used for follow-up auxiliary observation all the time, and the contact precision of the probes and the test points is mainly determined by the movement precision of the probe seat. The stroke of the probe seat is limited, and the movement precision of the probe seat is unstable when the probe seat moves to the stroke limit position, so that the contact precision of the probe and the wafer disc test point is reduced.
Disclosure of Invention
In order to improve the contact precision of a probe and a wafer test point, the application provides a method and equipment for improving the contact precision of the probe and the wafer test point.
In a first aspect, the present application provides a method for improving contact accuracy between a probe and a wafer test point, which adopts the following technical scheme:
a method for improving contact precision between a probe and a wafer test point comprises the following steps:
s1, anchoring a first identification point in a world coordinate system and establishing a first coordinate system;
s2, moving the crystal disc to enable each test point on the crystal disc to be aligned with the first identification point one by one, and simultaneously obtaining movement information of the crystal disc in the first coordinate system for each time so as to calculate and obtain a coordinate set [ X ] of each test point on the first coordinate system a ,Y a ]；
S3, anchoring the second identification point on the crystal disc, moving the crystal disc to enable the first identification point and the second identification point to be opposite, and returning the crystal disc to the initial height position after alignment is completed;
s4, establishing a second coordinate system based on the position of the second identification point in the world coordinate system;
s5, moving the crystal disc to enable the second identification points to be aligned with the probe points on the probe card one by one, and simultaneously obtaining movement information of the crystal disc each time to calculate and obtain a coordinate set [ X ] of each probe point on a second coordinate system b ,Y b ]；
S6, calculating a coordinate set [ X ] a ,Y a ]And coordinate set [ X b ,Y b ]To determine the positional relationship of each probe point to each test point on the X, Y axis.
By adopting the technical scheme, the first coordinate system is established according to the first identification point, and the first identification point is anchored at a certain point in the world coordinate system, so that the first coordinate system is a fixed absolute coordinate system. The wafer disc is moved to enable each test point on the wafer disc to be aligned with the first identification point one by one, the moving information of the wafer disc in the first coordinate system is calculated for each time to obtain the opposite number of coordinates of each test point in the first coordinate system, and therefore an absolute coordinate set [ X ] of each test point in the first coordinate system is obtained a ,Y a ]。
Since the second coordinate system is based on the second identification point in the world coordinate systemThe second coordinate system is thus also a stationary absolute coordinate system. Since the first and second identification points are aligned, the origin of the first coordinate system and the origin of the second coordinate system are the same in the direction X, Y, so that the absolute coordinate set [ X ] of each test point on the first coordinate system a ,Y a ]The error generated in the process of moving the crystal disk is not entered into the coordinate set [ X ] as the absolute coordinate set of each test point on the second coordinate system is the same a ,Y a ]Is a kind of medium.
The absolute coordinate set [ X ] of each probe point in the second coordinate system can be obtained by moving the crystal disc to enable the second identification points to be aligned with the probe points on the probe card one by one and calculating the movement information of the crystal disc in the second coordinate for each time b ,Y b ]By calculating a set of coordinates X a ,Y a ]And coordinate set [ X b ,Y b ]The position relation of each probe point and each test point on the X, Y axis can be obtained. In the technical scheme, the probe card is always in a fixed state, and the first vision system is also always in a fixed state, so that the probe cannot have unstable motion precision, and the alignment precision of the probe and the test point is improved. By determining the position relation between each probe point and each test point on the X, Y axis, the wafer disc can be controlled by a computer program to automatically align with the probe points, so that the alignment efficiency of the wafer is greatly improved.
Optionally, in step S1, a first vision system is disposed above the wafer disc, where the first vision system has a first vision image acquisition unit, and a center point of the first vision image acquisition unit is located on the first identification point;
in step S2, the height of the crystal disc is changed and the crystal disc is moved so that each test point on the crystal disc is aligned with the center point of the first visual image acquisition unit one by one, so that each test point can be clearly imaged in the first visual system, meanwhile, movement information of each time of the crystal disc is obtained, and the movement distance of the disc on the Z axis of the first coordinate system is DeltaZ 1 To calculate the coordinate set of each test point on the first coordinate systemAlloy [ X ] a ,Y a ,Z a ]；
In step S3, a second visual system is indirectly and fixedly connected with the crystal disc, wherein the second visual system is provided with a second visual image acquisition unit, and the center point of the second visual image acquisition unit is positioned on a second identification point; the first visual system is internally provided with a first identification image, the second visual system is internally provided with a second identification image, the first identification image is aligned with the first identification point, the second identification image is aligned with the second identification point, and the distance between the first visual image acquisition unit and the second visual image acquisition unit is set to be H; moving the crystal disc in the X, Y direction of the first coordinate system and changing the height of the crystal disc so that the first identification image can be clearly imaged in the second visual system, and aligning the first identification image and the second identification image to finish the calibration of the first identification point and the second identification point in the X, Y direction of the first coordinate system, wherein the movement distance of the center point of the second visual image acquisition unit in the Z-axis direction of the first coordinate system is delta Z 2 And returning the wafer disc to the initial height position after the alignment is completed.
In step S5, the wafer is moved in the direction X, Y of the second coordinate system and the height of the wafer is changed so that the second identification images are aligned with the probe points on the probe card one by one, so that the probe points can be clearly imaged in the second vision system, and the movement distance of the center point of the second vision image acquisition unit in the Z-axis direction of the first coordinate system is Δz 3 Simultaneously obtaining the movement information of the crystal disc for each time to calculate and obtain the coordinate set [ X ] of each probe point on the second coordinate system b ,Y b ,Z b ]。
By adopting the technical scheme, the distance between the first visual image acquisition unit and the second visual image acquisition unit is set to be H, and the height is the height difference between the first coordinate system and the second coordinate system. By varying the height of the crystal disc by DeltaZ 1 So that the test points on the wafer disk are clearly imaged in the first vision system.
By varying the height of the crystal disc by DeltaZ 2 The first identification image of the first vision system and the second identification image of the second vision systemThe identification images are registered so that the first identification image can be clearly imaged in the second vision system.
By changing the height of the crystal disc so that the probe point can be clearly imaged in the second vision system, the height variation of the crystal disc based on the first coordinate system is delta Z 3 . The coordinate set of each probe point on the second coordinate system is [ X ] b ,Y b ,Z b ]The coordinate set of each test point in the first coordinate system is [ X ] a ,Y a ,Z a ]The origin of the first coordinate system and the origin of the second coordinate system are the same in the X, Y direction, the height difference between the first coordinate system and the second coordinate system is H, the mutual position relationship between each probe point and each test point in the world coordinate system can be determined by calculating the transformation matrix between each probe point and each test point, and the movement of the wafer disc is controlled by a computer program, so that the test points on the wafer disc automatically contact with the probe points, and the wafer detection efficiency is greatly improved.
Optionally, in step S1, the first vision system performs overall scanning on the test points on the wafer, and controls the wafer to rotate in a plane parallel to the first coordinate system X, Y, so as to ensure that the array direction of the test points is the same as the X, Y axis direction of the second coordinate system.
By adopting the technical scheme, because the wafer needs to be moved to carry out contact test with the probe card in the test process, the wafer needs to be controlled to move in the plane parallel to the first coordinate system X, Y, and the wafer is controlled to carry out plane rotation in the plane parallel to the first coordinate system X, Y, so that the array direction of the test points is ensured to be the same as the X, Y axis direction of the second coordinate system, the wafer can move unidirectionally along the X or Y axis of the second coordinate system in the test process, and the wafer does not need to move bidirectionally along the X and Y axes of the second coordinate system every time, so that the accuracy of the movement of the wafer can be improved, the running time can be reduced, and the detection efficiency can be improved.
Optionally, in step S3, the first vision system obtains a coordinate set [ X ] of each test point on the first coordinate system a ,Y a ]The first vision system is then moved away from over the wafer disk.
By adopting the technical scheme, the first vision system is moved away from the wafer disc, so that the first vision system can not interfere with other testing steps in the subsequent testing process. At the same time, the first vision system is moved away, leaving the position of the probe point observed by the second vision system, so that the visual field of the second vision system is not blocked.
Optionally, the method further comprises:
s7, controlling the movement of the crystal disc so that at least one test point on the crystal disc contacts with a corresponding probe point, and simultaneously obtaining the movement information of the crystal disc;
s8, coordinate set [ X ] a ,Y a ,Z a ]And coordinate set [ X b ,Y b ,Z b ]The transformation matrix of (2) is a test transformation matrix, and the movement information in the step S7 is used for correcting the test transformation matrix;
s9, automatically controlling the probe card to perform full-automatic test on the wafer disc and recording corresponding data information.
By adopting the technical scheme, the test points on the crystal disc are in contact with the corresponding probe points, the movement information of the crystal disc is recorded, at the moment, the movement path of the crystal disc when moving to the corresponding test points is the actual path coordinate, and the test transformation matrix is corrected through the actual path coordinate, so that the height error between the first coordinate system and the second coordinate system is eliminated, and the subsequent automatic control probe card is convenient for carrying out full-automatic test on the crystal disc and recording corresponding data information.
In a second aspect, the present application provides an apparatus for improving contact accuracy between a probe and a wafer test point, and adopts the following technical scheme:
an apparatus for improving contact accuracy between a probe and a wafer test point, which adopts the method to test a wafer disc, comprises:
a frame;
the testing machine is used for carrying out electrical test on the crystal disc, and is arranged at the top of the frame, and a probe card is arranged at the bottom of the testing machine;
the sample table is used for bearing and fixing the crystal disc, and is provided with a central axis theta, and an image acquisition space is arranged between the sample table and the testing machine;
the stage driving mechanism is used for driving the sample stage X, Y, Z to move along three axes and rotate around the central axis theta of the sample stage;
the second vision system is used for acquiring the probe point position information of the probe card, is arranged on the sample table and is provided with a second vision image acquisition unit, and a second identification image is arranged on the second vision image acquisition unit;
the first vision system is used for acquiring the position information of the test point of the crystal disc, and is provided with a first vision image acquisition unit, a first identification image is arranged on the first vision image acquisition unit, and the first vision system can move into the image acquisition space.
Through adopting above-mentioned technical scheme, the brilliant disc bears on the sample platform, and the sample platform is controlled by stage body actuating mechanism to carry out X, Y, Z triaxial and rotate around the central axis θ of sample platform, thereby conveniently transport the brilliant disc to the test machine below. The first vision system obtains the position [ X ] of each test point on the wafer disc in a first coordinate system a ,Y a ,Z a ]The second vision system is used for acquiring the position [ X ] of the probe point in the second vision system b ,Y b ,Z b ]The mutual position relation between each probe point and each test point in the world coordinate system can be determined by calculating the transformation matrix between each probe point and each test point, and the movement of the wafer disc is controlled by a computer program, so that the test points on the wafer disc automatically contact with the probe points for testing, and the wafer detection efficiency is greatly improved.
Optionally, the sample platform has the loading surface that is used for bearing the brilliant disc, and the sample platform is provided with an adsorption tank at least in the one side that the loading surface is located, and adsorption tank intercommunication has the negative pressure device that can produce negative pressure.
Through adopting above-mentioned technical scheme, the adsorption tank intercommunication has the negative pressure device that can produce negative pressure to make the wafer of placing on the sample platform can be fixed by steadily. Meanwhile, after the wafer disc is detected, the negative pressure can be temporarily turned off, so that the wafer can be more conveniently taken off from the sample table and replaced.
Optionally, the first vision system is slidingly connected with the rack, and the moving direction of the first vision system is the same as the Y-axis moving direction of the sample stage.
By adopting the technical scheme, the first vision system needs to move back and forth in the wafer testing process, and the first vision system is connected with the rack in a sliding manner, so that the first vision system can be conveniently moved back and forth at the working position and the avoiding position.
In summary, the present application includes at least one of the following beneficial technical effects:
1. the probe card is always in a fixed state, and the first vision system is also always in a fixed state, and the coordinate set [ X ] is calculated a ,Y a ]And coordinate set [ X b ,Y b ]The position relation of each probe point and each test point on the X, Y axis can be obtained, and the alignment precision of the probe and the test points cannot be affected by the operation error of the probe and the first vision system. By determining the position relation between each probe point and each test point on the X, Y axis, the wafer disc can be controlled by a computer program to automatically align with the probe points, so that the alignment efficiency of the wafer is greatly improved;
2. the sample stage carries the wafer disc to move X, Y, Z in three axes and rotate around the central axis theta of the sample stage, so that the wafer disc is conveniently conveyed to the lower part of the testing machine for testing. Meanwhile, the first vision system is convenient to acquire images of the test points on the wafer disc, and the second vision system is arranged on the sample table, so that the sample table drives the second vision system to move, and the second vision system is convenient to acquire images of the probe points on the probe card. The first vision system obtains the position [ X ] of each test point on the wafer disc in a first coordinate system a ,Y a ,Z a ]The second vision system is used for acquiring the position [ X ] of the probe point in the second vision system b ,Y b ,Z b ]The mutual position relation between each probe point and each test point in the world coordinate system can be determined by calculating the transformation matrix between each probe point and each test point, and the movement of the wafer disc is controlled by a computer program, so that the test points on the wafer disc automatically contact with the probe points for testing, and the wafer detection efficiency is greatly improved.
Drawings
FIG. 1 is a schematic diagram of an apparatus for improving contact accuracy between probes and wafer test points in an embodiment of the present application;
FIG. 2 is a schematic structural view of a sample stage according to an embodiment of the present application;
FIG. 3 is a schematic diagram of a relationship between a first vision system and a second vision system during testing in accordance with an embodiment of the present application;
FIG. 4 is a schematic diagram illustrating alignment of test points of a wafer disk with a first vision system according to an embodiment of the present disclosure;
FIG. 5 is a schematic diagram illustrating alignment of a first vision system and a second vision system according to an embodiment of the present disclosure;
FIG. 6 is a schematic diagram of a second vision system aligned with a probe point of a probe card according to an embodiment of the present disclosure;
fig. 7 is a schematic diagram of a test point of a wafer disk and a probe point contact of a probe card in an embodiment of the present application.
Reference numerals illustrate:
1. a frame; 2. a testing machine; 21. a probe card; 22. an image acquisition space; 3. a sample stage; 31. a bearing surface; 32. an adsorption tank; 33. a negative pressure hole; 4. a table body driving mechanism; 5. a first vision system; 51. a first visual image acquisition unit; 6. a second vision system; 61. and a second visual image acquisition unit.
Detailed Description
The present application is described in further detail below in conjunction with figures 1-6.
The embodiment of the application discloses equipment for improving contact precision of a probe and a wafer test point.
Referring to fig. 1, an apparatus for improving contact precision between a probe and a wafer test point includes a frame 1, a testing machine 2, a sample stage 3, a stage driving mechanism 4, a first vision system 5 and a second vision system 6, wherein the testing machine 2 is mounted on an upper surface of the frame 1, a probe card 21 is mounted at a bottom of the testing machine 2, the frame 1 has a testing cavity, the stage driving mechanism 4 is located at a bottom of the testing cavity and mounted on the frame 1, the sample stage 3 is mounted on an upper end surface of the stage driving mechanism 4, the second vision system 6 is mounted on a side edge of the sample stage 3, the first vision system 5 is mounted in the testing cavity and is in sliding fit with the frame 1, the second vision system 6 has a second vision image acquisition unit 61, and a second identification image is arranged on the second vision image acquisition unit 61; the first vision system 5 has a first visual image acquisition unit 51, and a first identification image is provided on the first visual image acquisition unit 51. An image acquisition space 22 is provided between the sample stage 3 and the testing machine 2, and the first vision system 5 is capable of moving into the image acquisition space 22. In this embodiment, the first vision system 5 and the second vision system 6 may be wafer microscope cameras, the stage driving mechanism 4 may be a X, Y, Z and θ four-axis motion platform, and the stage driving mechanism 4 may be capable of driving the sample stage 3 to perform X, Y, Z three-axis movement and rotate around the central axis θ of the sample stage 3.
Referring to fig. 2, in order to more conveniently remove and replace a wafer from the sample stage 3, the upper surface of the sample stage 3 is set to be a bearing surface 31, the sample stage 3 is provided with a plurality of adsorption grooves 32 on one side where the bearing surface 31 is located, the adsorption grooves 32 are annularly arranged, blind holes are formed in the bottom positions of the adsorption grooves 32, negative pressure holes 33 which are communicated with the blind holes are formed in the side edges of the sample stage 3, and air nozzles are mounted on the negative pressure holes 33 and are connected with a negative pressure device. The wafer disk prevents the negative pressure device from generating a negative pressure after the wafer is placed on the sample stage 3 and adsorbs the wafer disk to the sample stage 3. After the wafer disc detection is completed, the negative pressure can be temporarily turned off, so that the wafer can be more conveniently removed from the sample table 3 and replaced.
The embodiment of the application also discloses a method for improving the contact precision of the probe and the wafer test point.
A method for improving contact precision between a probe and a wafer test point comprises the following steps:
referring to fig. 3 and 4, the above-mentioned wafer test apparatusThe mechanical coordinate system of the sample stage 3 is already set at the time of shipment, the origin of the mechanical coordinate system is set at the front lower left corner (where the specific position is not important) of the stage body driving mechanism 4, and the mechanical coordinate system is a fixed absolute coordinate system. Anchoring the first identification point in the mechanical coordinate system and establishing a first coordinate system, wherein the first coordinate system is a fixed absolute coordinate system, and calibrating and determining that the coordinate value of the first identification point in the mechanical coordinate system is (X) 1 ,Y 1 ,Z 1 ) The method comprises the steps of carrying out a first treatment on the surface of the Wherein, a first vision system 5 is arranged above the crystal disc, wherein, the first vision system 5 is provided with a first vision image acquisition unit 51, and the center point of the first vision image acquisition unit 51 is positioned on the first identification point. The first vision system 5 performs overall scanning on the test points on the wafer, controls the wafer to rotate on a plane parallel to the first coordinate system X, Y, and ensures that the array direction of the test points is identical to the X, Y axis direction of the second coordinate system, so that the wafer can move unidirectionally along the X or Y axis of the second coordinate system in the test process, and does not need to move bidirectionally along the X and Y axes of the second coordinate system every time, thereby improving the movement precision of the wafer, reducing the running time and improving the detection efficiency.
Referring to fig. 3 and 4, the wafer disc is moved so that each test point on the wafer disc is aligned with a first identification point one by one, and meanwhile movement information of each time of the wafer disc in a first coordinate system is obtained, so as to calculate and obtain a coordinate set [ X ] of each test point on the first coordinate system a ,Y a ]The method comprises the steps of carrying out a first treatment on the surface of the Changing the height of the wafer disc and moving the wafer disc to align each test point on the wafer disc with the center point of the first visual image acquisition unit 51 one by one, so that each test point can be imaged clearly in the first visual system 5, and meanwhile, the movement information of each time of the wafer disc is obtained, and the movement distance of the wafer disc on the Z axis of the first coordinate system is delta Z 1 To calculate the coordinate set [ X ] of each test point on the first coordinate system a ,Y a ,Z a ]The coordinate set of each test point in the mechanical coordinate system is [ X ] 1 +X a ,Y 1 +Y a ,Z 1 +Z a ]。
First vision system 5Obtaining a coordinate set [ X ] of each test point on a first coordinate system a ,Y a ,Z a ]Thereafter, the first vision system 5 is moved away from over the wafer disk so that the first vision system 5 does not interfere with other testing steps during subsequent testing. At the same time, the first vision system 5 is moved away, leaving the second vision system 6 in place to view the probe point so that the field of view of the second vision system 6 is not obstructed.
Referring to fig. 3 and 5, a second identification point is anchored to the crystal disc, and the crystal disc is indirectly and fixedly connected with a second vision system 6, wherein the second vision system 6 is provided with a second vision image acquisition unit 61, and the center point of the second vision image acquisition unit 61 is positioned on the second identification point; the first vision system 5 is internally provided with a first identification image, the second vision system 6 is internally provided with a second identification image, the first identification image is aligned with the first identification point, the second identification image is aligned with the second identification point, and the distance between the first vision image acquisition unit 51 and the second vision image acquisition unit 61 is set to be H; moving the wafer disk in the direction X, Y of the first coordinate system and changing the height of the wafer disk so that the first identification image can be clearly imaged in the second vision system 6, and aligning the first identification image and the second identification image to complete the calibration of the first identification point and the second identification point in the direction X, Y of the first coordinate system, wherein the distance by which the second identification point moves in the direction X, Y is Δx and Δy, respectively, and the movement distance of the center point of the second vision image acquisition unit 61 in the direction Z of the first coordinate system is ΔZ 2 And returning the wafer disc to the initial height position after the alignment is completed.
Referring to fig. 3 and 5, a second coordinate system is established based on the position of the second identification point in the mechanical coordinate system, and is also a fixed absolute coordinate system since the second coordinate system is established based on the second identification point in the mechanical coordinate system. Since the first and second identification points are aligned, the origin of the first coordinate system and the origin of the second coordinate system are the same in the direction X, Y, so that the absolute coordinate set [ X ] of each test point on the first coordinate system a ,Y a ,Z a ]With each test point at the second seatThe absolute coordinate set on the standard system is the same, and errors generated in the process of moving the crystal disk can not enter the coordinate set [ X ] a ,Y a ,Z a ]Is a kind of medium.
Referring to fig. 3 and 6, the wafer chuck is moved and the height of the wafer chuck is changed such that the second identification points are aligned one by one with the probe points on the probe card 21 and the probe points can be clearly imaged in the second vision system 6, and the center point of the second vision image acquisition unit 61 has a movement distance Δz in the Z-axis direction of the first coordinate system 3 Simultaneously obtaining the movement information of the crystal disc for each time to calculate and obtain the coordinate set [ X ] of each probe point on the second coordinate system b ,Y b ,Z b ]. Let the distance between the test point on the wafer disk and the probe point on the probe card 21 be L, and the coordinate set of each probe point in the mechanical coordinate system be [ X ] 1 +X b +ΔX,Y 1 +Y b +ΔY,Z 1 +Z a +L]。
Specifically, referring to fig. 3, the distance between the first coordinate system and the second coordinate system is known as H, and it can be understood that the distance between the first visual image acquisition unit 51 of the first visual system 5 and the second visual image acquisition unit 61 of the second visual system 6 is H.
In step S5, the focal length of the second vision system 6 is set to be a constant f 2 The second vision system 6 arranged at the side of the sample stage 3 can move in the Z-axis direction of the first coordinate system, and when the second vision system 6 is not required to work, the second vision system 6 moves below the bearing surface 31 of the sample stage 3 so as to protect the second vision image acquisition unit 61; when the second vision system 6 is required to operate, the second vision system 6 is extended and fixed in position. When the second vision system 6 works, let the distance from the second vision image acquisition unit 61 to the upper surface of the wafer disc be h, the distance L between the test point on the wafer disc and the probe point on the probe card 21 can be:
in step S2, the focal length of the first vision system 5 is set to be constantf 1 The distance H between the first coordinate system and the second coordinate system may be obtained by the height of the crystal disc change when the first vision system 5 observes the test point:
in step S3, the distance H between the first coordinate system and the second coordinate system may be obtained by the height of the crystal disc change when the first vision system 5 is aligned with the second vision system 6 and imaged:
from the formula (2) and the formula (3), it can be seen that:
substituting the distance h from the second visual image acquisition unit 61 to the upper surface of the wafer disk in the formula (5) into the formula (1) yields:
the distance L between the test point on the wafer disk and the probe point on the probe card 21 is thus found.
Coordinate value Z of crystal disc test point on Z axis of first coordinate system a =ΔZ 1 +f 1 。
And respectively obtaining the coordinate values of each test point and each probe point in a mechanical coordinate system by calculating the moving distance of the crystal disc for each time. By calculating a set of coordinates X 1 +X a ,Y 1 +Y a ,Z 1 +Z a ]And a set of coordinates [ X 1 +X b +ΔX,Y 1 +Y b +ΔY,Z 1 +Z a +L]The transformation matrix of each test point and each test point can be obtainedThe probe points are in relative positional relationship within the mechanical coordinate system. According to the relative position relation between each test point and each probe point in the mechanical coordinate system, the control console body driving mechanism 4 drives the wafer disc to move, so that the test points on the wafer disc automatically contact the probe points for testing, and the wafer detection efficiency is greatly improved.
Referring to fig. 3 and 7, the movement of the wafer disc is controlled so that at least one test point on the wafer disc is in contact with a corresponding probe point, and meanwhile, movement information of the wafer disc is obtained;
coordinate set [ X a ,Y a ,Z a ]And coordinate set [ X b ,Y b ,Z b ]Is a test transformation matrix, and the movement information and the test transformation matrix in step S7 are used for correction. The test points on the crystal disc are contacted with the corresponding probe points, movement information of the crystal disc is recorded, at the moment, a movement path of the crystal disc when the crystal disc moves to the corresponding test points is an actual path coordinate, and the test transformation matrix is corrected through the actual path coordinate, so that the height error between the first coordinate system and the second coordinate system is eliminated, and the follow-up automatic control probe card 21 is convenient for carrying out full-automatic test on the crystal disc and recording corresponding data information.
The foregoing are all preferred embodiments of the present application, and are not intended to limit the scope of the present application in any way. Wherein like parts are designated by like reference numerals. It should be noted that the words "front", "rear", "left", "right", "upper" and "lower" used in the following description refer to directions in the drawings, and the words "inner" and "outer" refer to directions toward or away from, respectively, the geometric center of a particular component. Therefore: all equivalent changes in structure, shape and principle of this application should be covered in the protection scope of this application.
Claims (3)
1. The method for improving the contact precision of the probe and the wafer test point is characterized by comprising the following steps:
s1, anchoring a first identification point in a world coordinate system and establishing the first coordinate system, and setting a first vision system (5) above a crystal disc, wherein the first vision system (5) is provided with a first vision image acquisition unit (51), and the central point of the first vision image acquisition unit (51) is positioned on the first identification point;
s2, moving the crystal disc to enable each test point on the crystal disc to be aligned with the first identification point one by one, and simultaneously obtaining movement information of the crystal disc in the first coordinate system for each time so as to calculate and obtain a coordinate set [ X ] of each test point on the first coordinate system a ,Y a ]Changing the height of the wafer disc and moving the wafer disc so that each test point on the wafer disc is aligned with the center point of the first visual image acquisition unit (51) one by one, so that each test point can be clearly imaged in the first visual system (5), and meanwhile, the movement information of each time of the wafer disc is obtained, and the movement distance of the wafer disc on the Z axis of the first coordinate system is delta Z 1 To calculate the coordinate set [ X ] of each test point on the first coordinate system a ,Y a ,Z a ]；
S3, anchoring the second identification point on the crystal disc, moving the crystal disc to enable the first identification point and the second identification point to be relatively positioned, returning the crystal disc to the initial height position after alignment is completed, and indirectly and fixedly connecting the crystal disc with a second vision system (6), wherein the second vision system (6) is provided with a second vision image acquisition unit (61), and the center point of the second vision image acquisition unit (61) is positioned on the second identification point; the first visual system (5) is internally provided with a first identification image, the second visual system (6) is internally provided with a second identification image, the first identification image is aligned with the first identification point, the second identification image is aligned with the second identification point, and the distance between the first visual image acquisition unit (51) and the second visual image acquisition unit (61) is set to be H; moving the wafer disk in the direction X, Y of the first coordinate system and changing the height of the wafer disk so that the first identification image can be clearly imaged in the second vision system (6), and aligning the first identification image and the second identification image to complete the calibration of the first identification point and the second identification point in the direction X, Y of the first coordinate system, wherein the movement distance of the center point of the second vision image acquisition unit (61) in the Z-axis direction of the first coordinate system is delta Z 2 Returning the crystal disc to the initial height position after alignment is completed;
s4, establishing a second coordinate system based on the position of the second identification point in the world coordinate system;
s5, moving the crystal disc to enable the second identification points to be aligned with the probe points on the probe card (21) one by one, and simultaneously obtaining movement information of the crystal disc each time to calculate and obtain a coordinate set [ X ] of each probe point on a second coordinate system b ,Y b ]Moving the wafer in a direction X, Y of the second coordinate system and changing the height of the wafer so that the second identification images are aligned one by one with the probe points on the probe card (21) to enable the probe points to be clearly imaged in the second vision system (6), the movement distance of the center point of the second vision image acquisition unit (61) in the Z-axis direction of the first coordinate system being DeltaZ 3 Simultaneously obtaining the movement information of the crystal disc for each time to calculate and obtain the coordinate set [ X ] of each probe point on the second coordinate system b ,Y b ,Z b ]；
S6, calculating a coordinate set [ X ] a ,Y a ]And coordinate set [ X b ,Y b ]To determine the positional relationship of each probe point with each test point on the X, Y axis;
s7, controlling the movement of the crystal disc so that at least one test point on the crystal disc contacts with a corresponding probe point, and simultaneously obtaining the movement information of the crystal disc;
s8, coordinate set [ X ] a ,Y a ,Z a ]And coordinate set [ X b ,Y b ,Z b ]The transformation matrix of (2) is a test transformation matrix, and the movement information in the step S7 is used for correcting the test transformation matrix;
s9, automatically controlling the probe card (21) to perform full-automatic test on the crystal disc and recording corresponding data information.
2. The method of claim 1, wherein the probe is contacted with the wafer test point with high accuracy,
in step S1, the first vision system (5) performs overall scanning on the test points on the wafer, and controls the wafer to rotate in a plane parallel to the first coordinate system X, Y, so as to ensure that the array direction of the test points is the same as the X, Y axis direction of the second coordinate system.
3. The method of claim 2, wherein the probe is contacted with the wafer test point with high accuracy,
in step S3, the first vision system (5) obtains a coordinate set [ X ] of each test point on the first coordinate system a ,Y a ]Thereafter, the first vision system (5) is moved away from above the wafer disk.
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| CN115728233B (en) * | 2022-09-14 | 2023-08-29 | 深圳市智佳能自动化有限公司 | Wafer detection platform and method thereof |
| CN117012689B (en) * | 2023-09-26 | 2023-12-15 | 天津中科晶禾电子科技有限责任公司 | Wafer alignment device and method |
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