CN113687101A - Electrochemical sensitive electrode, manufacturing method and angular acceleration sensor applying electrochemical sensitive electrode - Google Patents
Electrochemical sensitive electrode, manufacturing method and angular acceleration sensor applying electrochemical sensitive electrode Download PDFInfo
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- CN113687101A CN113687101A CN202111041871.4A CN202111041871A CN113687101A CN 113687101 A CN113687101 A CN 113687101A CN 202111041871 A CN202111041871 A CN 202111041871A CN 113687101 A CN113687101 A CN 113687101A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/007—Interconnections between the MEMS and external electrical signals
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00269—Bonding of solid lids or wafers to the substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00301—Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0235—Accelerometers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0862—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with particular means being integrated into a MEMS accelerometer structure for providing particular additional functionalities to those of a spring mass system
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Abstract
The invention discloses an electrochemical sensitive electrode, a manufacturing method and an angular acceleration sensor using the electrochemical sensitive electrode. It comprises a sensitive electrode chip; the chip includes: a substrate with a groove on the lower surface, an insulating layer formed on the upper surface and the lower surface of the substrate, a plurality of flow holes penetrating through the insulating layer on the upper surface and the lower surface of the substrate and the substrate, an anode, a cathode and a flow hole side wall insulating layer formed on the inner side wall of the flow hole; an anode formed on a first region of an insulating layer on an upper surface of the substrate; the cathode is formed on the second area of the insulating layer on the upper surface of the substrate and the inner side wall of the flow hole; the cathode is spaced from the anode by an insulating ring around the periphery of the second region. And attaching and assembling the second surfaces of the two sensitive electrode chips to form the electrode. The invention realizes the integrated design and manufacture of the sensitive core, and the assembly difficulty is obviously reduced; the cathode and the anode are manufactured simultaneously, so that the process steps are reduced; the electrode parameters are convenient to adjust.
Description
Technical Field
The invention relates to the technical field of angular acceleration sensors and MEMS (micro-electromechanical systems) sensors, in particular to an electrochemical sensitive electrode, a manufacturing method and an angular acceleration sensor using the electrochemical sensitive electrode, namely a structural design and assembly method of a low-frequency electrochemical angular acceleration sensor.
Background
Angular motion is one of the most basic forms of motion in nature and is widely present in the objective world. Angular acceleration is a key parameter for describing angular motion, and in the field of low-frequency vibration, accurate measurement of angular acceleration has important significance in the fields of seismic monitoring, engineering detection, navigation positioning system application and the like.
The electrochemical angular acceleration sensor is a sensor for converting an external angular acceleration signal into an electric signal, a sensitive element of the sensor is of a four-electrode structure, the sensor is immersed in a mixed solution of iodine and potassium iodide, the solution is sealed in an annular hollow tube, and the four electrodes are arranged according to the sequence of anode-cathode-anode. In operation, a small voltage difference is applied between the anode and the cathode, redox reactions occur between the cathode and the anode surface, and a stable ion concentration gradient is formed between the cathode and the anode. When the cathode is static, the concentrations of the reactive ions on the surfaces of the two cathodes are equal, and the output currents are the same. When an external angular acceleration exists, the electrolyte and the sensitive electrode move relatively, so that the concentrations of the reactive ions on the surfaces of the two cathodes are not equal any more, and the output currents of the two cathodes are influenced. Finally, the voltage signals obtained by current-voltage conversion and difference of the output current signals of the two cathodes are in direct proportion to the input angular acceleration signals.
The sensitive electrode of the traditional electrochemical angular acceleration sensor is made of a woven platinum mesh by a ceramic sintering technology, and the manufacturing process is complex and poor in consistency. Therefore, the process has high cost and poor mass production capacity, and the wide application of the electrochemical angular acceleration sensor is limited. In order to overcome the disadvantages of the conventional process, in recent years, MEMS (Micro-Electro-Mechanical-System) technology is used to fabricate the sensitive electrode of the electrochemical angular acceleration sensor. At present, an MEMS (micro electro mechanical systems) electrochemical angular acceleration sensor based on a planar electrode is simple in process, but the sensitivity of the sensor is low due to the fact that a sensitive electrode is of a planar structure and the area of the electrode is limited. (planar electrode-related patent acceptance number: 202010329618.8).
Disclosure of Invention
In order to solve the problems, the invention provides an electrochemical sensitive electrode and a manufacturing method thereof, and also provides an angular acceleration sensor based on the electrochemical sensitive electrode.
The invention adopts the following technical scheme:
an electrochemically sensitive electrode comprising a sensitive electrode chip;
the sensitive electrode chip includes: a substrate, a first insulating layer, a second insulating layer, an orifice sidewall insulating layer, a plurality of orifices, a first electrode, and a second electrode;
the substrate comprises a first surface and a second surface which are opposite, and the second surface is provided with a groove;
a first insulating layer formed on the first surface;
a second insulating layer formed on the second surface;
a plurality of flow holes penetrating the first insulating layer, the substrate, and the second insulating layer;
an orifice sidewall insulating layer formed on an inner sidewall of the orifice;
the first insulating layer includes a first region, a second region surrounding an outer periphery of the flow hole, and an insulating ring surrounding an outer periphery of the second region;
a first electrode formed on a first region of the first insulating layer;
and the second electrode is formed on the second area of the first insulating layer and the inner side wall of the flow hole, and the second electrode is separated from the first electrode through the insulating ring.
Further, the flow hole serves as an electrolyte flow passage.
Further, the second insulating layer is conformally disposed on the second surface.
Furthermore, the second surfaces of the two sensitive electrode chips are attached to each other to form the electrodes, and the two second electrodes are separated from each other through the grooves.
Further, the outlet of each flow hole on the surface of the second insulating layer faces the groove. The groove between the two second electrodes is used for separating the two second electrodes, and meanwhile, the design ensures that the flow holes are not contacted, and the two sensitive electrode chips do not need to be accurately aligned when being bonded.
Further, the first surface, the second surface and the flow hole side wall surface are continuously covered with silicon nitride or silicon oxide insulating layers. Preferably, the first insulating layer covers the entire first surface. Preferably, the second insulating layer covers the entire second surface. Preferably, the orifice sidewall insulating layer covers the entire inner sidewall of the orifice.
Further, the substrate is a silicon wafer. The insulating ring is a silicon nitride or silicon oxide insulating layer.
Furthermore, the insulating ring is provided with a gap between the cathode and the anode.
Further, two sensitive electrode chips are assembled together by means of adhesion.
A method of making a sensing electrode as claimed in any preceding claim, comprising the steps of:
(1) preparing a substrate;
(2) etching the second surface of the substrate to form a second surface groove;
(3) deeply etching the first surface of the substrate to form a through hole as an electrolyte flow channel;
(4) processing the substrate to generate a first insulating layer, a second insulating layer and a flow hole side wall insulating layer;
(5) sputtering metal on the insulating layer to be used as an electrode, and forming a first electrode pattern and a second electrode pattern;
(6) and attaching and assembling the second surfaces of the two sensitive electrode chips to form the electrode.
Further, the substrate is a silicon wafer, and the insulating layer material is selected from silicon oxide and/or silicon nitride.
Further, the preparing the substrate includes the steps of: and (5) cleaning the silicon wafer. Preferably, 230 μm of high-resistivity silicon is selected as the substrate.
Further, the etching the second surface of the substrate to form the second surface groove includes the following steps: manufacturing a photoresist mask on the back of the cleaned silicon wafer; and etching the silicon wafer to form a large hole on the back surface so as to realize the insulation of the two cathodes.
Further, the deep etching of the first surface of the substrate to form a through hole as an electrolyte flow channel includes the following steps: washing off the photoresist; manufacturing a photoresist mask on the front side of the silicon wafer with the back side etched; and deeply etching the silicon wafer from the front side to form a through hole as an electrolyte flow channel.
Further, the processing the substrate to generate the first insulating layer, the second insulating layer and the flow hole sidewall insulating layer comprises the following steps: washing off the photoresist; and thermally oxidizing the silicon wafer to generate a silicon oxide insulating layer. Preferably, a 600nm silicon dioxide insulating layer is grown on the silicon wafer etched with the through holes by adopting a dry oxygen-wet oxygen-dry oxygen alternating method.
Further, the sputtering metal is used as an electrode, and the forming of the cathode and anode patterns comprises the following steps: and manufacturing a photoresist mask on the silicon wafer subjected to the thermal oxidation. The photoresist is dry film. Platinum was sputtered as an electrode. Stripping the platinum on the photoresist, and forming a cathode pattern and an anode pattern on the silicon wafer.
Further, the attaching and assembling of the second surfaces of the two sensitive electrode chips to form the electrode includes the following steps: and coating glue on the back surface, wherein the glue coating area is around the etched big hole. And adhering the two sensitive electrode chips with the back surfaces coated with the glue together, baking, and naturally cooling to room temperature to complete the bonding of the sensitive chips.
An angular acceleration sensor, which comprises a sensitive electrode as described in any one of the above items or a sensitive electrode manufactured by the method as described in any one of the above items.
Furthermore, the sensor also comprises an integral packaging shell, the integral packaging shell comprises a flow channel shell and a flow channel cover plate, and the sensitive electrode is positioned at the junction of the two flow channel shells.
Further, the flow channel housing is also provided with a magnet placing area and an exciting electrode placing hole.
Further, the sensor is composed of a sensitive electrode chip and an integral packaging shell.
Further, when the flow channel cover plate is assembled, the flow channel cover plate and the flow channel shell are adhered together, and the sensitive electrode is located in the center of the two flow channel shells and is packaged through a physical fastening method. The runner shell is provided with a liquid injection hole. The electrolyte is injected through the injection hole.
Further, the magnet placing areas are respectively arranged on the left side and the right side of the upper surface and the lower surface of the runner casing, and the upper surface and the lower surface form a pair to enhance the magnetic field intensity.
In some embodiments of the invention, the flow aperture shape is selected from square, circular, and/or triangular, among others.
In some embodiments of the present invention, two chip bonding assembly methods use SU8 glue, BCB glue or silicon bonding to assemble two chips together.
In some embodiments of the invention, the electrolyte is selected from an electrolyte system of potassium iodide and iodine, a bromine-bromide electrolyte system, or a ferricyanide-ferrocyanide electrolyte system.
In some embodiments of the invention, the annular flow channel housing material is selected from plexiglass, or other material that does not react with the electrolyte solution, such as glass or the like;
in some embodiments of the present invention, the sealing method of the plexiglass ring-shaped casing is performed by adhering with acetone, UV glue, and/or BCB glue, etc., or by physically pressing with a rubber film.
The invention has the beneficial effects that:
(1) the integrated design and manufacture of the sensitive core are realized, and the assembly difficulty is obviously reduced;
(2) the cathode and the anode are manufactured simultaneously, so that the process steps are reduced;
(3) electrode parameters comprise the diameter of the flow hole, the distance between the anode and the cathode and the area, and the adjustment is convenient, so that the optimization design of the performance of the sensor is facilitated;
(4) and precise alignment bonding is not required between the two silicon wafers.
Drawings
FIG. 1 is a cross-sectional view of an electrochemical sensing electrode chip;
FIG. 2 is a three-dimensional schematic view of an electrochemical sensing electrode chip;
FIG. 3 shows an angular acceleration sensor structure and packaging method using electrochemical sensitive electrodes;
FIG. 4 sensitive electrode MEMS process flow;
in the figure: 100-sensitive electrode chip; 101-a silicon-based substrate; 102-a silicon oxide insulating layer; 103-anode; 104-a cathode; 105-the inter-cathode gap; 106-flow orifice; 107-macropore between cathodes; 108-SU8 glue; 200-integral package housing; 201-flow channel housing; 202-a flow passage cover plate; 203-magnet placement area; 204-sensitive chip placement position; 205-annular flow channel; 206-screw hole; 207-excitation electrode access hole; 208-pour hole.
Detailed Description
In order to make the technical solution and advantages of the present invention more apparent, the present invention is described in detail below with reference to specific examples and the accompanying drawings.
An electrochemically sensitive electrode, as shown in figures 1-2. Fig. 1 is a cross-sectional view of an electrochemical sensitive electrode chip, wherein the sensitive electrode chip 100 comprises a silicon substrate 101, a silicon oxide insulating layer 102, an anode 103, a cathode 104, an electrolyte flow hole 106, two large holes 107 between the cathodes, and SU8 glue 108.
The silicon based substrate 101 comprises opposite front and back sides, the back side having inter-cathode large holes 107. The large inter-cathode apertures 107 are formed by etching on the backside of the silicon-based substrate 101. The inter-cathode macropores 107 are shaped as grooves. The depth of the macropores 107 between the cathodes is smaller than the thickness of the silicon-based substrate 101, and the depth of the macropores 107 can be adjusted as required.
Silicon oxide insulating layers 102 are formed on the front and back surfaces of the silicon-based substrate 101. The plurality of electrolyte flow holes 106 penetrate through the insulating layer on the front surface of the silicon based substrate 101, and the insulating layer on the back surface of the silicon based substrate 101. The outlet of each flow hole 106 at the back face is opposite the large inter-cathode hole 107. The inner sidewall of each flow hole 106 is also covered with a silicon oxide insulating layer 102. The electrolyte flow hole 106 is an electrolyte flow passage.
That is, the front surface, the back surface, and the inner sidewall surface of the flow hole 106 of the silicon-based substrate 101 are continuously covered with the silicon oxide insulating layer 102. The back surface is continuously covered with the silicon oxide insulating layer 102, which means that the back surface of the silicon substrate 101 and the inner wall of the hole of the inter-cathode large hole 107 are continuously covered with the silicon oxide insulating layer 102.
The silicon oxide insulating layer on the front surface of the silicon substrate 101 consists of a first area, a second area surrounding the periphery of the flow hole and an insulating ring surrounding the periphery of the second area.
And the anode 103 is formed on a first area of the silicon oxide insulating layer on the front surface of the silicon-based substrate 101.
And the cathode 104 is formed on the second area of the silicon oxide insulating layer on the front surface of the silicon-based substrate 101 and the inner side wall of the flow hole 106. The anode 103 is spaced from the cathode 104 by the insulating ring. The insulating ring is provided with a gap 105 between the cathode and the anode.
The inter-cathode gap 105 is used for realizing cathode and anode insulation, the two inter-cathode large holes 107 are used for separating the two cathodes, and meanwhile, the design enables the flow holes not to be in contact, and accurate alignment is not needed when the two sensitive electrode chips 100 are bonded. Two sensitive electrode chips 100 coated with SU8 glue on the back surfaces are adhered together. SU8 glue 108 bonds and assembles two sensitive electrode chips 100 together, and realizes an integrated four-electrode structure.
Fig. 2 is a three-dimensional schematic diagram of an electrochemical sensing electrode chip 100, wherein the left side is a bonding-assembled sensing electrode chip, and the right side is a cross-sectional view. The side wall electrode of each flow hole is led out through a lead to be used as a cathode 104, the large-area electrode is used as an anode 103, the cathode-anode gap 105 realizes the insulation between the cathode and the anode, and the large hole 107 is etched on the back surface to ensure that the two cathodes 104 are not contacted. The scheme has the advantages that after etching and hot oxidation of the flow holes are completed, the cathode 104 and the anode 103 can be simultaneously manufactured, two electrodes can be completed only by one-step sputtering, and the process flow is simplified; the design of the backside macro-apertures 107 reduces problems with bonding alignment errors, such as reduced sensitivity, poor uniformity, etc. Meanwhile, sputtering can ensure that the side wall of the flow hole is provided with an electrode, so that the area of the cathode is increased, and the performance of the device is improved.
FIG. 3 is a diagram of a structure and a packaging method of an angular acceleration sensor using an electrochemical sensitive electrode, wherein the upper left side is a diagram of an assembled sensor, the upper right side is a diagram of a packaging method, and the lower side is a view of a side with a liquid injection hole. The sensor is composed of a sensitive electrode chip 100 and an integral packaging shell 200. The whole packaging shell 200 comprises two pairs of flow channel shells 201 and flow channel cover plates 202, the sensitive electrode chip 100 is located at a sensitive chip placing position 204 at the junction of the two flow channel shells, the flow channel cover plates 202 and the flow channel shells 201 are bonded together through acetone during assembly, the sensitive electrode chip 100 is located in the center of the two flow channel shells and is pressed tightly through an O-shaped rubber ring and the flow channel shells, meanwhile, screws are screwed in screw holes 206, and electrolyte is injected through liquid injection holes 208. The liquid injection hole 208 is located on the runner housing 201. The screw hole 206 is located on the runner housing 201.
The annular flow channel 205 is formed by digging a ring-shaped groove in the flow channel housing 201, the annular flow channel 205 refers to the groove dug in the flow channel housing 201 and used for forming an electrolyte flow channel, the flow channel cover plate 202 and the flow channel housing 201 are bonded together for sealing, and a hollow annular flow channel groove is formed, and the annular flow channel groove is the annular flow channel 205.
In addition, the shell provided by the invention further comprises a magnet placing area 203 and an excitation electrode placing hole 207, and the function of the shell is that the performance of the sensor can be tested without an angular acceleration turntable. The magnet placement regions 203 are provided on the left and right sides of the upper and lower surfaces of the flow channel casing, and the upper and lower surfaces constitute a pair to enhance the magnetic field intensity.
FIG. 4 is a flow chart of the MEMS process for an electrochemical sensing electrode chip:
(1) cleaning a silicon wafer, preferably selecting 230 mu m high-resistance silicon as a substrate;
(2) manufacturing a photoresist mask (a) on the back of the cleaned silicon wafer;
(3) etching the silicon wafer to form a large hole on the back surface so as to realize the insulation of the two cathodes;
(4) washing away the photoresist (c);
(5) manufacturing a photoresist mask (d) on the front side of the silicon wafer with the back side etched;
(6) deeply etching the silicon wafer from the front side to form a through hole as an electrolyte flow channel;
(7) washing away the photoresist (f);
(8) thermally oxidizing the silicon wafer to generate a silicon oxide insulating layer, preferably, growing a 600nm silicon dioxide insulating layer on the silicon wafer with the through hole by adopting a dry oxygen-wet oxygen-dry oxygen alternative method;
(9) manufacturing a photoresist mask (h) on the silicon wafer which is subjected to the thermal oxidation, wherein the photoresist adopts a dry film to prevent the through hole from being blocked because the through hole is etched on the silicon wafer;
(10) sputtering platinum as an electrode (i);
(11) stripping the platinum (j) on the photoresist, and forming a cathode pattern and an anode pattern on the silicon wafer;
(12) SU8 glue (k) is coated on the back surface, and the glue coating area is around the etched big hole so as to prevent the SU8 glue from blocking the channel hole;
(13) and (3) bonding the two sensitive electrode chips coated with SU8 glue on the back surfaces, baking the sensitive electrode chips on a 125-degree hot plate for 30 minutes, taking down the sensitive electrode chips, and naturally cooling to room temperature to complete bonding of the sensitive electrode chips.
In some embodiments of the present invention, the insulating layer material includes, but is not limited to, silicon oxide, silicon nitride, and the like;
in some embodiments of the invention, flow orifice shapes include, but are not limited to, square, circular, triangular, etc.;
in some embodiments of the present invention, the two chip bonding assembly method is not limited to SU8 glue adhesion, and a BCB glue or silicon bonding method can be used to assemble two chips together;
in some embodiments of the invention, the electrolyte systems of the electrolytes potassium iodide and iodine may be replaced with other electrolyte systems that can undergo reversible redox, including bromo-bromide, ferricyanide-ferrocyanide, and the like;
in some embodiments of the invention, the material of the annular flow passage casing is not limited to organic glass, and other materials which do not react with the electrolyte solution, such as glass, can be selected;
in some embodiments of the present invention, the sealing method of the organic glass annular shell is not limited to adhesion using acetone, UV glue, BCB glue, etc., but may also be a method of sealing by physically pressing a rubber film, etc.
The invention has not been described in detail and is part of the common general knowledge of a person skilled in the art. The above-described embodiments are merely illustrative of the preferred embodiments of the present invention, and the preferred embodiments are not exhaustive and do not limit the invention to the precise embodiments described. Various modifications and improvements of the technical solution of the present invention may be made by those skilled in the art without departing from the spirit of the present invention, and the technical solution of the present invention is to be covered by the protection scope defined by the claims.
Claims (10)
1. An electrochemical sensitive electrode, which is characterized by comprising a sensitive electrode chip;
the sensitive electrode chip includes: a substrate, a first insulating layer, a second insulating layer, an orifice sidewall insulating layer, a plurality of orifices, a first electrode, and a second electrode;
the substrate comprises a first surface and a second surface which are opposite, and the second surface is provided with a groove;
a first insulating layer formed on the first surface;
a second insulating layer formed on the second surface;
a plurality of flow holes penetrating the first insulating layer, the substrate, and the second insulating layer;
an orifice sidewall insulating layer formed on an inner sidewall of the orifice;
the first insulating layer includes a first region, a second region surrounding an outer periphery of the flow hole, and an insulating ring surrounding an outer periphery of the second region;
a first electrode formed on a first region of the first insulating layer;
and the second electrode is formed on the second area of the first insulating layer and the inner side wall of the flow hole, and the second electrode is separated from the first electrode through the insulating ring.
2. The electrode of claim 1, wherein the second insulating layer is conformally disposed on the second surface.
3. The electrode of claim 1, wherein the second surfaces of the two sensing electrode chips are attached to each other to form the electrode, and the two second electrodes are separated from each other by the groove.
4. The electrode of claim 1 wherein the exit of each flow aperture at the surface of the second insulating layer is opposite the recess.
5. The electrode of claim 1 wherein the first surface, the second surface, and the flowbore sidewall surface are continuously covered with an insulating layer of silicon nitride or silicon oxide.
6. A method of making a sensing electrode according to any of claims 1 to 4, comprising the steps of:
(1) preparing a substrate;
(2) etching the second surface of the substrate to form a second surface groove;
(3) deeply etching the first surface of the substrate to form a through hole as an electrolyte flow channel;
(4) processing the substrate to generate a first insulating layer, a second insulating layer and a flow hole side wall insulating layer;
(5) sputtering metal on the insulating layer to be used as an electrode, and forming a first electrode pattern and a second electrode pattern;
(6) and attaching and assembling the second surfaces of the two sensitive electrode chips to form the electrode.
7. The method of claim 6, wherein: the substrate is a silicon wafer, and the insulating layer is made of silicon oxide or silicon nitride.
8. An angular acceleration sensor, characterized in that it contains a sensitive electrode according to any of claims 1-5 or a sensitive electrode manufactured according to the method of any of claims 6-7.
9. The sensor of claim 8, further comprising an integral package housing comprising a flow channel housing and a flow channel cover plate, wherein the sensing electrode is located at the intersection of the two flow channel housings.
10. The sensor of claim 9, wherein the flow channel housing further has a magnet placement area and an excitation electrode placement hole.
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