CN113686434B - Temperature simulation compensation method and system for photoelectric detection device - Google Patents
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Abstract
The invention discloses a temperature simulation compensation method and system for a photoelectric detection device. The method comprises the following steps: for a photoelectric detection device for specific measurement, a second-order polynomial function of working temperature is adopted to respectively carry out regression fitting on the slope and/or intercept of the linear relation between the light power value and the output quantity, the second-order polynomial function of the slope and the working temperature and/or the second-order polynomial function of the slope and the working temperature obtained by fitting are adopted, and temperature compensation is carried out on the light power value according to the working temperature. The linear relation between the optical power value and the output logarithmic value can be obtained only by 3 calibration temperatures, so that the calibration work of temperature compensation on the photoelectric detection device is greatly reduced, and the cost of the high-precision photoelectric detection device is reduced. The photoelectric detection system applying the method compensates the working temperature by linearly fitting the photoelectric detector with the working section, improves the photoelectric detection precision and widens the photoelectric detection range.
Description
Technical Field
The invention belongs to the technical field of optical modules, and particularly relates to a temperature simulation compensation method and system for a photoelectric detection device.
Background
With the rapid development of optical communication technology, optical network devices, modules and subsystems for high-speed communication and data communication applied to optical networks are gradually developed. The birth of erbium-doped fiber amplifiers (EDFAs) is a revolutionary breakthrough in the field of optical fiber communication, which enables long-distance, large-capacity and high-speed optical fiber communication, and is also an indispensable important device for DWDM systems and future high-speed systems and all-optical networks. The related technology of the amplifier, especially the intensive research and application of the PD detection technology, has important significance on the development of optical fiber communication.
Especially, in the construction of core network and backbone network, the related technology of erbium-doped fiber amplifier (EDFA) is deeply researched and applied, which has important significance for the development of optical fiber communication. High performance Erbium Doped Fiber Amplifiers (EDFAs) rely on high precision, ultra wide range photodetection techniques.
At present, the photoelectric detection technology is interfered by various factors, and especially in the high-precision or low-power photoelectric detection technology, the application requirement is difficult to achieve. In order to improve the detection accuracy, an interpolation compensation method is generally adopted, a large number of experiments are required to be performed for different batches to obtain check data, and the development cost is high.
Disclosure of Invention
The invention provides a temperature simulation compensation method and a temperature simulation compensation system for a photoelectric detection device, aiming at compensating working temperature and dark current power by the conventional photoelectric detector detection technology adopting linear fitting, so that the detection precision of the light power in a low power range and a high power range is improved, and the photoelectric detection in a high-precision and ultra-wide range is realized by matching with a multi-section fitting technology, so that the technical problems of low detection precision or limited detection range in the prior art are solved.
In order to achieve the above object, according to one aspect of the present invention, there is provided a method for temperature analog compensation of a photodetecting device, comprising the steps of:
for a photoelectric detection device for specific measurement, a second-order polynomial function of working temperature is adopted to respectively carry out regression fitting on the slope and/or intercept of the linear relation between the light power value and the output quantity, the second-order polynomial function of the slope and the working temperature and/or the second-order polynomial function of the slope and the working temperature obtained by fitting are adopted, and temperature compensation is carried out on the light power value according to the working temperature.
Preferably, in the analog compensation method for the temperature of the photodetection device, when the photodetection device is in a specific linear operating section, the OUTPUT is the interface sampling ADC data or the logarithm value of the ADC data, and the detection power P dBm The linear relationship of (a) is expressed as:
P dBm ＝K*OUTPUT+C
where K is the slope and C is the intercept.
Preferably, the temperature analog compensation method for the photoelectric detection device is implemented by respectively fitting a second-order polynomial function of temperature to the slope K and the intercept C of the linear relationship between the optical power value and the logarithmic output value, and specifically includes:
K＝a 1 *T 2 +b 1 *T+c 1
C＝a 2 *T 2 +b 2 *T+c 2
wherein T is the working temperature, a 1 、b 1 、c 1 、a 2 、b 2 、c 2 Parameters for the second order polynomial function are determined by data fitting.
Preferably, the temperature analog compensation method for the photoelectric detection device adopts a second-order polynomial function of the slope and the working temperature and a second-order polynomial function of the slope and the working temperature obtained by fitting, carries out temperature compensation on the light power value according to the working temperature, and detects the power P through the temperature compensation dBm The calculation is as follows:
P dBm ＝(a 1 *T 2 +b 1 *T+c 1 )*OUTPUT+(a 2 *T 2 +b 2 *T+c 2 )。
preferably, the photoelectric detection device temperature simulation compensation method adopts a second-order polynomial function to perform regression fitting on the dark current compensation power P dark And performing dark current compensation on the light power value according to the working temperature by adopting a second-order polynomial function of dark current compensation power and the working temperature obtained by fitting, and detecting power P compensated by the temperature and the dark current dBm The calculation is as follows:
P dBm ＝mw2dB(dB2mw((a 1 *T 2 +b 1 *T+c 1 )*OUTPUT+(a 2 *T 2 +b 2 *T+c 2 ))-dB2mw(P dark ))
wherein dB2mW () is a conversion function to convert dBm value to mW value
mW2dB () is a conversion function to convert mW values to dBm values
P dark ＝a 3 *T 2 +b 3 *T+c 3
Wherein, a 3 、b 3 、c 3 Is a parameter of a second order polynomial function.
According to another aspect of the present invention, there is provided a temperature simulation compensation system for a photodetecting device, comprising a temperature sensor, a memory, a processor and a computer program stored in the memory and executable on the processor, wherein the temperature sensor is configured to determine an operating temperature of the photodetector, and the processor is configured to implement a linear fitting and temperature compensation method for logarithm of an output amount of the photodetector according to the temperature simulation compensation method when executing the computer program according to the operating temperature of the photodetector, so as to obtain a detected optical power.
According to another aspect of the present invention, a photodetection system is provided, which includes a photodetection device and the photodetection device temperature simulation compensation system provided by the present invention, wherein the output of the photodetection device is output to the photodetection device temperature simulation compensation system, and the photodetection device temperature simulation compensation system performs linear fitting and temperature compensation on the output of the photodetector to obtain the detected optical power.
Preferably, the photodetection device of the photodetection system is a linear photodetector or a logarithmic photodetector.
Preferably, the photodetection system, the photodetection device of which is a linear photodetector, includes a photodiode, a transimpedance amplifier and an operational amplifier connected in series; the trans-impedance amplifier comprises a plurality of control ends and a plurality of shunt resistors, wherein the control ends of the trans-impedance amplifier change the photoelectric detection device by enabling different shunt resistors to be in an access or non-access stateElectrical properties, which enable the linear photodetector to be located in different specific linear operating sections; the output ends of the trans-impedance amplifier and the operational amplifier respectively output the output quantities of the photoelectric detectors under the electrical properties of different electric detection devices; the temperature simulation compensation system of the photoelectric detection device determines the electrical performance of the photoelectric detection device by reading signals of an access port and a control end of a trans-impedance amplifier, and compensates power P by adopting slope K, intercept C and/or dark current under the electrical performance of the corresponding photoelectric detection device dark The slope K, intercept C, and/or dark current compensation power P used for the parametric calculation linear fit of the second order function dark And performing linear fitting on the output quantity of the photoelectric detector to obtain the detected optical power.
Preferably, the photodetection system, the photodetection device of which is a logarithmic photodetector, includes a photodiode, a logarithmic transimpedance amplifier, and an operational amplifier connected in series; the temperature analog compensation system of the photoelectric detection device acquires the output quantity of the logarithmic photoelectric detector, namely interface sampling ADC data, determines the linear section where the interface sampling ADC data is located according to the interface sampling ADC data, and compensates the power P by adopting the slope K, the intercept C and/or the dark current of the corresponding linear section dark The slope K, intercept C, and/or dark current compensation power P used for the parametric calculation linear fit of the second order function dark And performing linear fitting on the output quantity of the photoelectric detector to obtain the detection optical power.
In general, compared with the prior art, the above technical solution contemplated by the present invention can achieve the following beneficial effects:
the analog compensation method for the photoelectric detection device provided by the invention confirms that the slope and the intercept of the linear relationship between the light power value and the output quantity of the photoelectric detector are influenced by the working temperature through a large amount of experimental data, the change relationship between the slope and the intercept along with the temperature accords with a second-order polynomial, and when a second-order function is adopted to fit the temperature data of a test project, the correlation coefficient R 2 All are close to or exceed 0.99, and the regression fitting result shows that the second-order function of the temperature can accurately simulate the slope and intercept of the linear relation between the optical power value and the output quantity. The linear relation between the optical power value and the output logarithmic value can be obtained only by 3 calibration temperatures, so that the calibration work of temperature compensation on the photoelectric detection device is greatly reduced, and the cost of the high-precision photoelectric detection device is reduced.
The photoelectric detection system provided by the invention compensates for the working temperature by linearly fitting the working section of the photoelectric detector, improves the photoelectric detection precision and widens the photoelectric detection range. Especially for the detection range of low power, the compensation is performed for dark current, and the detection precision of the linear fitting working section of low power is further improved. The optimal scheme is matched with a photoelectric detector covered by a multi-stage section, so that a high-precision, full-temperature and ultra-wide photoelectric detection range (the detection range is larger than 75dB, and the precision is smaller than 0.5 dB) is realized.
Drawings
Fig. 1 is a schematic diagram of a circuit structure of a photodetector provided in embodiment 1 of the present invention;
fig. 2 is a schematic diagram of a circuit structure of a photodetector provided in embodiment 2 of the present invention;
fig. 3 is a schematic view of a linear photoelectric detection system provided in embodiment 1 of the present invention, covering a working range in a segmented manner;
FIG. 4 is a curve showing the variation of the first section (LV 1) K of the linear photo-detection system with the temperature T from-5 ℃ to 75 ℃ according to embodiment 1 of the present invention;
FIG. 5 is a curve showing the variation of the first section (LV 1) C of the linear photo-detection system with the temperature T from-5 ℃ to 75 ℃ according to embodiment 1 of the present invention;
FIG. 6 is a graph of dark current power (dBm) versus temperature T from-5 ℃ to 75 ℃ in a first segment (LV 1) of a linear photo-detection system provided in embodiment 1 of the present invention;
fig. 7 is a schematic structural diagram of a logarithmic photodetection system provided in embodiment 2 of the present invention;
FIG. 8 is a schematic diagram of the segmented coverage working range of the logarithmic photodetection system provided in embodiment 2 of the present invention;
FIG. 9 is a schematic diagram of a piecewise linear fit of a logarithmic photodetection system provided in embodiment 2 of the present invention;
FIG. 10 is a graph of the variation of the temperature T from-5 deg.C to 75 deg.C of the first segment (LV 1) K of the logarithmic photoelectric detection system provided in embodiment 2 of the present invention;
FIG. 11 is a graph showing the temperature T of the first segment (LV 1) C of the logarithmic photodetector system according to embodiment 2 of the present invention varying from-5 deg.C to 75 deg.C;
fig. 12 is a graph of the change of dark current power (dBm) versus temperature T from-5 ℃ to 75 ℃ for the first segment (LV 1) of the logarithmic photodetector system provided in embodiment 2 of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and do not limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
A photoelectric detector, the sampling value is influenced by temperature, the compensation calculation is needed between the acquisition value of the photoelectric detector and the final optical power aiming at the temperature change, the temperature simulation compensation method of the general photoelectric detection device generally adopts a calibration interpolation method, namely, the acquisition value and the optical power of the photoelectric detector are calibrated at a specific calibration temperature, interpolation is carried out at the temperature among a plurality of calibration temperatures to approximately estimate the difference between the measured value of the optical power and the true value of the optical power calculated by the temperature on the acquisition value of the photoelectric detector, and the temperature compensation is carried out according to the estimated difference. The compensation effect of the method is limited by the density of calibration data, namely the compensation effect is better when the calibrated temperature is more, however, the difference estimation error is always larger because the discrete calibration fitting temperature is calibrated. When the requirement on the precision is high, because more calibration fitting temperatures need to be calibrated, large-scale correction is needed when the device leaves a factory, and the cost is very high.
The invention provides a temperature simulation compensation method of a photoelectric detection device, which comprises the following steps:
for a photoelectric detection device for specific measurement, a second-order polynomial function of working temperature is adopted to respectively regress and fit the slope and/or intercept of the linear relation between the light power value and the output quantity, and the second-order polynomial function of the slope and the working temperature and/or the second-order polynomial function of the slope and the working temperature obtained by fitting are adopted to carry out temperature compensation on the light power value according to the working temperature.
The experimental data show that: when the temperature is controlled under a constant temperature condition, the linear relation between the optical power for testing and the output quantity of the photoelectric detector is good, and when the temperature exceeds 25 ℃, the linear relation between the optical power and the photoelectric detector is obviously influenced by the change of the temperature. Through a large number of engineering temperature data experiments, it is observed that the slope and intercept of the test luminous power value and the output quantity change with the temperature change if a linear relation is adopted, and the linear relation between the test luminous power value and the output quantity logarithm value is deteriorated when the temperature changes. Further, when a second order function is adopted to fit the test engineering temperature data, the correlation coefficient R 2 The temperature and the power output are close to or exceed 0.99, and the regression fitting result shows that the second-order function of the temperature can accurately simulate the slope and the intercept of the linear relation between the optical power value and the output quantity. Theoretically, only 3 calibration temperatures are needed to obtain the linear relation between the optical power value and the output logarithmic value, so that the calibration work for temperature compensation of the photoelectric detection device is greatly reduced, and the cost of the high-precision photoelectric detection device is reduced.
Specifically, when the photodetection device is in a specific linear operating section, such as a specific electrical performance condition of the linear photodetector, and also such as a specific linear fitting section of the logarithmic photodetector, the OUTPUT is the interface sampling ADC data or the logarithmic value of the ADC data, and the detection power P dBm Is expressed as:
P dBm ＝K*OUTPUT+C
wherein, log10 (ADC) is a Log of OUTPUT, K is a slope, C is an intercept, OUTPUT is an OUTPUT, and when the photodetection device is a linear photodetector, OUTPUT, i.e. a Log of ADC data sampled by an interface, is generally specifically Log10 (ADC) × 10; when the photoelectric detection device is a logarithmic photoelectric detector, the OUTPUT (OUTPUT-interface) samples the ADC numberAccordingly. Currently, the detection power P is generally obtained by performing linear fitting according to the Log10 (ADC) × 10 value of the linear photodetector dbm The value is obtained by performing linear fitting according to the ADC value of the logarithmic photoelectric detector dBm The value is obtained.
The slope K and the intercept C of the linear relation between the optical power value and the output quantity are respectively fitted by adopting a second-order polynomial function of the temperature, and the method specifically comprises the following steps:
K＝a 1 *T 2 +b 1 *T+c 1
C＝a 2 *T 2 +b 2 *T+c 2
wherein T is the working temperature, a 1 、b 1 、c 1 、a 2 、b 2 、c 2 Parameters for the second order polynomial function are determined by data fitting. Preferably, the fitting is performed by adopting sampling data of three calibration fitting temperatures, the preferred calibration fitting temperatures are 25 ℃, 45 ℃ and 65 ℃, the slope K below 25 ℃ and the change of the intercept C along with the temperature are small, generally, the slope K and the intercept C below 25 ℃ can be directly adopted, so that the accuracy of the temperature range below 25 ℃ can be improved by the calibration fitting at 25 ℃, in addition, the working environment of photoelectric detection is considered, the temperature generally does not exceed 75 ℃, therefore, the highest calibration fitting temperature is preferably close to the upper limit of the working environment temperature, 65 ℃ is selected, the intermediate temperature between 25 ℃ and 65 ℃ is taken as the calibration fitting temperature, and the higher fitting effect can be obtained with the lowest calibration cost.
And fitting one of the slope K and the intercept C by adopting a second-order polynomial function of the working temperature, namely realizing temperature compensation to a certain extent, improving the accuracy of the photoelectric detection device, and preferably fitting the slope K by adopting the second-order polynomial function of the working temperature to realize temperature compensation. Preferably, the slope K and the intercept C are fitted simultaneously by a second order polynomial function of the operating temperature, so that the temperature compensated probe power P is obtained dBm The calculation is as follows:
P dBm ＝(a 1 *T 2 +b 1 *T+c 1 )*OUTPUT+(a 2 *T 2 +b 2 *T+c 2 )
in addition, it has been found that when the detected optical power is low, the temperature not only affects the intercept of the slope of the linear relationship between the optical power value and the output logarithm, but also causes other interference. Repeated experiments confirm that for the optical power detection case, temperature affects the linear relationship between the detection power of the photodetector and the ADC data by affecting the dark current of the photodiodes (including PD and APD).
At lower power, therefore, compensation for temperature-induced dark current interference is required. Through a large amount of engineering temperature data experiments, under the specific linear working section of the photoelectric detection device, the dark current compensation power P dark Will change with the temperature + by a second order polynomial function, the dark current compensates the power P dark Performing regression fitting by using a second-order polynomial function, wherein the calculation method comprises the following steps:
P dark ＝a 3 *T 2 +b 3 *T+c 3
wherein, a 3 、b 3 、c 3 Is a parameter of a second order polynomial function.
Dark current compensation is carried out on the light power value according to the working temperature by adopting a second-order polynomial function of the dark current compensation power and the working temperature obtained by fitting, and the detection power P after temperature compensation dBm The calculation is as follows:
P dBm ＝mw2dB(dB2mw((a 1 *T 2 +b 1 *T+c 1 )*OUTPUT+(a 2 *T 2 +b 2 *T+c 2 ))-dB2mw(P dark ))
wherein dB2mW () is a conversion function to convert dBm value to mW value
mW2dB () is a conversion function that converts mW values to dBm values
The temperature simulation compensation system of the photoelectric detection device comprises a temperature sensor, a memory, a processor and a computer program which is stored on the memory and can run on the processor, wherein the temperature sensor is used for measuring the working temperature of the photoelectric detector, and the processor is used for realizing the linear fitting and the temperature compensation of the logarithm of the output quantity of the photoelectric detector by the temperature simulation compensation method of the photoelectric detection device provided by the invention when executing the computer program according to the working temperature of the photoelectric detector so as to obtain the detected light power.
The photoelectric detection system comprises a photoelectric detection device and a photoelectric detection device temperature simulation compensation system, wherein the output quantity of the photoelectric detection device is output to the photoelectric detection device temperature simulation compensation system, and the photoelectric detection device temperature simulation compensation system performs linear fitting and temperature compensation on the output quantity of the photoelectric detector to obtain detected light power.
The photoelectric detection device is a linear photoelectric detector or a logarithmic photoelectric detector.
The preferred scheme is as shown in fig. 1, the photoelectric detection device is a linear photoelectric detector, and comprises a photodiode, a transimpedance amplifier and an operational amplifier which are connected in series; the transimpedance amplifier comprises a plurality of control ends and a plurality of shunt resistors, wherein the control ends of the transimpedance amplifier change the electrical performance of the photoelectric detection device by enabling different shunt resistors to be in an access or non-access state, so that the linear photoelectric detector is in different specific linear working sections; the output ends of the trans-impedance amplifier and the operational amplifier respectively output the output quantities of the photoelectric detectors under the electrical properties of different electric detection devices; the temperature simulation compensation system of the photoelectric detection device determines the electrical performance of the photoelectric detection device by reading signals of an access port and a control end of a trans-impedance amplifier, and compensates power P by adopting slope K, intercept C and/or dark current under the electrical performance of the corresponding photoelectric detection device dark The slope K, intercept C, and/or dark current compensation power P used for the linear fit of the parameter calculation of the second order function of (2) dark And performing linear fitting on the output quantity of the photoelectric detector to obtain the detected optical power.
The multi-level sampling of data is realized by changing the electrical performance of the photoelectric detector, and the working ranges of different linear photoelectric detectors are covered by the multi-level sampled data, so that the detection requirement of an ultra-wide range is realized, and the high-precision wide-range photoelectric detection of 75dB or even more is achieved.
Preferably, as shown in fig. 2, the photo-detection device is a logarithmic photo-detector, and includes a photodiode, a logarithmic transimpedance amplifier, and an operational amplifier connected in series; the temperature analog compensation system of the photoelectric detection device acquires the output quantity of the logarithmic photoelectric detector, namely interface sampling ADC data, determines the linear section where the interface sampling ADC data is located according to the interface sampling ADC data, and compensates the power P by adopting the slope K, the intercept C and/or the dark current of the corresponding linear section dark The slope K, intercept C, and/or dark current compensation power P used for the parametric calculation linear fit of the second order function dark And performing linear fitting on the output quantity of the photoelectric detector to obtain the detection optical power.
The following are examples:
example 1 Linear photodetector System
The linear photoelectric detection system provided by the embodiment comprises a linear photoelectric detector and a temperature analog compensation system of a photoelectric detection device.
As shown in fig. 1, a linear photodetector includes a Photodiode (PD), a transimpedance amplifier (TIA), and an operational amplifier (OP) connected in series; the transimpedance amplifier comprises a plurality of control ends and a plurality of shunt resistors, wherein the control ends of the transimpedance amplifier change the electrical performance of the photoelectric detection device by enabling different shunt resistors to be in an access or non-access state, so that the linear photoelectric detector is in different specific linear working sections;
the photoelectric TIA (trans-impedance amplifier) + OP (operational amplifier) linear amplification detection control circuit is a bridge between an optical signal and an electric signal, and has wide application in various fields. In the field of optical communication, an optical-electrical TIA (trans-impedance amplifier) + OP (operational amplifier) linear amplification detection circuit is an important approach and method for acquiring an optical signal. The photoelectric TIA (trans-impedance amplifier) + OP (operational amplifier) amplification detection circuit converts an optical signal into a current signal which can be controlled and processed by an integrated circuit, then converts the current signal into a voltage signal, and obtains optical information (intensity of light and the like) through the change of the voltage signal. The photoelectric TIA (trans-impedance amplifier) + OP (operational amplifier) linear amplification detection circuit is an important component, such as a Photodiode (Photodiode), an analog sampling chip (AD 7266 BCPZ) and the like, and outputs a corresponding current signal by converting the strength of a detection optical signal. Generally, the amplification range of an amplifying and detecting circuit of a photoelectric TIA (transimpedance amplifier) + OP (operational amplifier) is fixed in a narrow range (the detection range is less than 25dB, and the precision is less than 0.5 dB), so that the bandwidth of a detected optical signal is narrow, an optical signal in a larger range is too saturated or too small to be detected (the optical signal is too weak, the noise interference is large), and meanwhile, the information of the detected optical signal cannot be accurately reflected due to the dark current phenomenon of a Photodiode (Photodiode).
The input ends of the two control selection switches are connected to the output end TIA of the first-stage amplifier and the output end OP of the second-stage operational amplifier through a first resistor R1, a second resistor R2 and a third resistor R3. When the two switches select the first state to output (namely, the 1-level photoelectric detection TIA + OP linear amplification is opened), the Photodiode (Photodiode) amplification circuit is connected to pass through the output end TIA of the first resistor R1, and meanwhile, the output end OP of the second-level amplification circuit, so that two-level sampling data (LV1. K/C and LV2. K/C) can be obtained; when the two switches select the second state to output, the Photodiode (Photodiode) amplifying circuit is connected to pass through the output end TIA of the second resistor R2, and simultaneously the output end OP of the second-stage amplifying circuit, so that two-stage sampling data (LV3.K/C and LV4.K/C) can be obtained; when the two switches select the third state to output, the Photodiode (Photodiode) amplifying circuit is connected to pass through the output end TIA of the third resistor R3, and simultaneously the output end OP of the second-stage amplifying circuit, so that two-stage sampling data (LV5.K/C and LV6.K/C) can be obtained.
Linear amplified probe data (6 grades: LV1.K/C, LV2.K/C, LV3.K/C, LV4.K/C, LV5.K/C and LV6.K/C, respectively) and dark current (mW) were obtained in 6 grades without taking into account the temperature change of the Photodiode (Photodiode), which is schematically shown in FIG. 3.
The operation mode is as follows: when switch control unit CTL1 and switch control unit CTL2 are combined, four states are generated, 00, 01, 10 and 11 respectively (left unused). (1) When the state of the switch control unit (CTL 1 and CTL 2) is 00, a voltage signal connected with a Photodiode (Photodiode) amplifying circuit is output to a TIA Out end through a first resistor R1 (510) to sample 1 st-stage linear amplification data, and meanwhile, a second-stage amplifying circuit AMP (31) is output to an OP Out end to sample 2 nd-stage linear amplification data. (2) When the state of the switch control unit (CTL 1 and CTL 2) is 01, a voltage signal connected with a Photodiode (Photodiode) amplifying circuit is output to a TIA Out end through a second resistor R2 (330K) to sample 3 rd-level linear amplification data, and meanwhile, a second-level amplifying circuit AMP (31) outputs an OP Out end to sample 4 th-level linear amplification data. (3) When the state of the switch control unit (CTL 1 and CTL 2) is 10, a voltage signal connected with a Photodiode (Photodiode) amplifying circuit is output to a TIA Out end through a third resistor R3 (10M) to sample 5 th-level linear amplification data, and meanwhile, a second-level amplifying circuit AMP (31) outputs an OP Out end to sample 6 th-level linear amplification data. Therefore, 6-level linear amplification detection sampling data can be obtained, and the requirement that the maximum ultra-wide range detection can reach more than or equal to 75dB is met.
The temperature analog compensation system of the photoelectric detection device adopts a central processing unit and a peripheral circuit, consists of a high-speed micro control processor (MCU), a minimum power supply circuit unit of the MCU, high-speed DA, AD, PWM and IO ports of the MCU, and is a core part of a control, detection and acquisition circuit module.
The temperature simulation compensation system of the photoelectric detection device determines the electrical performance of the photoelectric detection device by reading signals of an access port and a control end of a trans-impedance amplifier. Using slope K, intercept C, and/or dark current compensation power P at electrical performance of corresponding photo-detection device for a particular level of linearly amplified detection data dark Second order function ofSlope K, intercept C, and/or dark current compensation power P for use in a computational linear fit dark And performing linear fitting on the output quantity of the photoelectric detector to obtain the detected optical power. The method comprises the following specific steps:
sampling the linear relation between ADC data and detection power through a high-speed AD interface of a high-speed micro-control processor (MCU), and finally obtaining a fitting power formula of each stage as follows:
P dBm ＝K*Log10(ADC)*10+C
the detection range of each level is within 14dB, so that the detection requirement of the ultra-wide range can be met by 6 levels of power detection in sequence, and the maximum power can be more than or equal to 75dB. The Photodiode (Photodiode) can change along with the change of the environmental temperature during the application process of an erbium-doped fiber amplifier (EDFA). Through a large number of engineering temperature data experiments, the K and C values in the formula can be seen to change along with the temperature T by a second-order polynomial function.
Taking the first stage as an example: the change curve of K value with temperature T is shown in FIG. 4, R 2 =0.9946; the curve of C value with temperature T is shown in FIG. 5, R 2 ＝0.9903。
According to the change situation of the K and C values along with the temperature T, the temperature-related compensation can be avoided when the temperature is lower than 25 ℃; but temperature variations above 25 c require temperature dependent compensation. The formula for K, C values as a function of temperature T can be derived by fitting a large number of experimental data as follows (calibration fitting temperatures of 25 ℃, 45 ℃ and 65 ℃, respectively):
K＝a 1 *T 2 +b 1 *T+c 1
C＝a 2 *T 2 +b 2 *T+c 2
wherein T is the working temperature, a 1 、b 1 、c 1 、a 2 、b 2 、c 2 Parameters for the second order polynomial function are determined by data fitting for each segment.
Under the change of ambient temperature, the dark current generated by a Photodiode (Photodiode) in operation is effectively compensated. Dark current is colloquially said, first, that this current is not generated by photons from the outside,but from thermal noise inside the element; secondly, any diode has a theoretical characteristic of forward conduction and reverse cut-off, but in reality, a photodiode component cannot be truly cut off in the reverse direction (the reverse saturation current is 0), and finally, the dark current cannot be completely eliminated, and only the influence of the dark current can be reduced by an effective compensation technology (particularly, when the optical signal is weak, the optical power is less than or equal to-50 dBm, the effect is obvious). Generally, dark current is very small and is basically in the uA and nA levels, in the field of optical communication, the dark current of a common Photodiode (Photodiode) is less than or equal to 10nA, and meanwhile, the dark current index can be used for judging whether a diode element is broken down or not and whether a wafer process has problems or not. As the temperature changes, the dark current of a Photodiode (photo diode) also changes with the temperature. Through a large number of engineering temperature data experiments, the dark current compensation power P of each stage can be seen dark Will change as a second order polynomial function with temperature T, where FIG. 6 is a first order LV1.K/C dark current power (dBm) versus temperature curve, where R 2 ＝0.9983。
The best dark current compensation power P can be fitted by experimental data dark The formula for the variation with temperature T is as follows (calibration fit temperatures 25 deg.C, 45 deg.C and 65 deg.C, respectively):
P dark ＝a 3 *T 2 +b 3 *T+c 3
wherein, a 3 、b 3 、c 3 Is a parameter of a second order polynomial function.
Temperature compensated probe power P dBm The calculation is as follows:
P dBm ＝mw2dB(dB2mw((a 1 *T 2 +b 1 *T+c 1 )*Log10(ADC)*10+(a 2 *T 2 +b 2 *T+c 2 ))-dB2mw(a 3 *T 2 +b 3 *T+c 3 ))
the temperature simulation compensation system of the photoelectric detection device provided by the embodiment calculates the optical power according to the following method:
when the working temperature T is less than or equal to 25 ℃ and is in the first stage or the second stage, the dark current power is compensated, and the method comprises the following steps:
P dBm ＝mw2dB(dB2mw(K*Log10(ADC)*10+C)-dB2mw(a 3 *T 2 +b 3 *T+c 3 ))
when the working temperature T is less than or equal to 25 ℃ and is in the third stage to the sixth stage, compensation is not needed:
P dBm ＝K*Log10(ADC)*10+C
when the working temperature T is more than 25 ℃ and is in the first stage or the second stage, the temperature and the dark current power are compensated:
P dBm ＝mw2dB(dB2mw((a 1 *T 2 +b 1 *T+c 1 )*Log10(ADC)*10+(a 2 *T 2 +b 2 *T+c 2 ))-dB2mw(a 3 *T 2 +b 3 *T+c 3 ))
when the working temperature T is more than 25 ℃ and is in the third stage to the sixth stage, the temperature is compensated:
P dBm ＝(a 1 *T 2 +b 1 *T+c 1 )*Log10(ADC)*10+(a 2 *T 2 +b 2 *T+c 2 )
wherein a is 1 、b 1 、c 1 、a 2 、b 2 、c 2 And obtaining the lower linear working section (LV1. K/C, LV2.K/C, LV3.K/C, LV4.K/C, LV5.K/C and LV6. K/C) according to the electric performance by section fitting, wherein a 3 、b 3 、c 3 Or obtaining the data according to the piecewise fitting of the working sections (LV1. K/C and LV2. K/C).
Through determination: under the ambient temperature of-5 ℃ to +65 ℃, the ultra-wide detection range of the power of a Photodiode (Photodiode) is beyond-60 dBm to 20dBm and exceeds the detection range of 75 dB; under the ambient temperature of minus 5 ℃ to plus 65 ℃, the error precision is less than 0.5dB in the range of 75dB power detected by a Photodiode (Photodiode) (when the detected power is less than minus 50dBm, the precision still meets the requirement through the dark current temperature related compensation technology).
Example 2 logarithmic photodetector System
The structure of the logarithmic photoelectric detection system provided by this embodiment is shown in fig. 7, and includes a logarithmic photoelectric detector and a temperature analog compensation system of a photoelectric detection device.
As shown in fig. 2, the logarithmic photodetector includes a photodiode, a logarithmic transimpedance amplifier (AD 8304 chip), and an operational amplifier circuit (AMP (2)) connected in series. The logarithmic amplifier generally uses the middle section with good linear relation as the working section, and the linear relation between the output quantity at two ends and the optical power is deteriorated, so that the logarithmic amplifier is abandoned. In order to widen the operating range of the logarithmic photodetector, the low power segment or the high power segment outside the linear operating range is subjected to temperature compensation and/or dark current compensation. The detection accuracy can also be improved by temperature compensation and dark current compensation for the working range. In general, the working range can be widened and the precision can be improved at low cost.
The temperature analog compensation system of the photoelectric detection device adopts a central processing unit and a peripheral circuit, consists of a high-speed micro control processor (MCU), a minimum power supply circuit unit of the MCU, high-speed DA, AD, PWM and IO ports of the MCU, and is a core part of a control, detection and acquisition circuit module.
The temperature analog compensation system of the photoelectric detection device reads the interface sampling ADC data of the logarithmic photoelectric detector through a high-speed micro control processor (MCU) to serve as output quantity. According to the ADC data sampled by the interface, the linear section where the ADC data is located is determined, and the slope K, the intercept C and/or the dark current compensation power P of the corresponding linear section are adopted dark The slope K, intercept C, and/or dark current compensation power P used for the parametric calculation linear fit of the second order function dark And performing linear fitting on the output quantity of the photoelectric detector to obtain the detected optical power. The method specifically comprises the following steps:
under the condition of not considering the temperature change of a Photodiode (Photodiode) and the influence of dark current, 3 sections of LOG amplified detection data (3 sections respectively represent LV1-1.K/C, LV1-2.K/C and LV 1-3.K/C) can be obtained by segmenting ADC2 and ADC3, and a schematic diagram is shown in FIG. 8.
Linear fitting is respectively adopted for the three sections, wherein the linear fitting degree of LV1-2.K/C is good, namely the working section of general logarithmic photoelectric detection is shown in a schematic diagram in FIG. 9. In the lowest stage of amplifying circuit LV1-1.K/C (-55 dBm to-60 dBm), the sampled data presents nonlinear characteristics, and is analyzed to be caused by dark current and change along with temperature.
The temperature analog compensation system of the photoelectric detection device acquires the output quantity of the logarithmic photoelectric detector, namely interface sampling ADC data, determines the linear section where the interface sampling ADC data is located according to the interface sampling ADC data, and compensates the power P by adopting the slope K, the intercept C and/or the dark current of the corresponding linear section dark The slope K, intercept C, and/or dark current compensation power P used for the parametric calculation linear fit of the second order function dark And performing linear fitting on the output quantity of the photoelectric detector to obtain the detection optical power. The method comprises the following specific steps:
in the temperature simulation compensation system for a photo-detector device provided in this embodiment, a fitting power formula for each segment of a logarithmic photo-detector is as follows:
P dBm ＝K*ADC+C
and reading an ADC value corresponding to the PD from an AD interface of the MCU, and determining the section according to the range of the ADC value. And (3) after compensating the K and C values of the section according to the working temperature, calculating the optical power:
take the first stage (LV1. K/C) as an example: the curve of K value versus temperature T is shown in FIG. 10, R 2 =0.9902; the curve of C value with temperature T is shown in 11, R 2 ＝0.987。
Through determination: under the ambient temperature of minus 5 ℃ to plus 65 ℃, the ultra-wide detection range of the power of a Photodiode (Photodiode) is beyond minus 60dBm to 20dBm and exceeds 75dB detection range; the formula for K, C values as a function of temperature T can be derived by fitting a large number of experimental data as follows (calibration fitting temperatures of 25 ℃, 45 ℃ and 65 ℃, respectively):
K＝a 1 *T 2 +b 1 *T+c 1
C＝a 2 *T 2 +b 2 *T+c 2
wherein T is the working temperature, a 1 、b 1 、c 1 、a 2 、b 2 、c 2 Parameters for the second order polynomial function are determined by data fitting.
Through a large amount of engineering temperature dataExperiment shows that each stage of dark current compensation power P dark Will change with a second order polynomial function with temperature T, wherein FIG. 12 is a first order LV1.K/C, dark current power (dBm) with temperature change curve R 2 ＝0.9982。
The best dark current compensation power P can be fitted by experimental data dark The formula for the variation with temperature T is as follows (calibration fit temperatures 25 deg.C, 45 deg.C and 65 deg.C, respectively):
P dark ＝a 3 *T 2 +b 3 *T+c 3
wherein, a 3 、b 3 、c 3 Is a parameter of a second order polynomial function.
Temperature compensated probe power P dBm The calculation is as follows:
P dBm ＝mw2dB(dB2mw((a 1 *T 2 +b 1 *T+c 1 )*ADC+(a 2 *T 2 +b 2 *T+c 2 ))-dB2mw(a 3 *T 2 +b 3 *T+c 3 ))
the temperature simulation compensation system of the photoelectric detection device provided by the embodiment calculates the optical power according to the following method:
reading an ADC value corresponding to the PD from an AD interface of the MCU, and judging the size relation between the ADC value and the ADC2 and the ADC 3:
when ADC < ADC2, compensate the dark current, when the temperature working temperature T is less than or equal to 25 ℃, need not to compensate the temperature, including:
P dBm ＝mw2dB(dB2mw(K*ADC+C)-dB2mw(a 3 *T 2 +b 3 *T+c 3 ))
the working temperature T is more than 25 ℃ to compensate the temperature, and comprises the following steps:
P dBm ＝mw2dB(dB2mw((a 1 *T 2 +b 1 *T+c 1 )*ADC+(a 2 *T 2 +b 2 *T+c 2 ))-dB2mw(a 3 *T 2 +b 3 *T+c 3 ))
when ADC2 is less than or equal to ADC3, the device is positioned in a linear working section of the logarithmic power detection device, T is less than or equal to 25 ℃, and the compensation is as follows:
P dBm ＝K*Log10(ADC)*10+C
the working temperature T is more than 25 ℃ to compensate the temperature, and comprises the following steps:
P dBm ＝(a 1 *T 2 +b 1 *T+c 1 )*OUTPUT+(a 2 *T 2 +b 2 *T+c 2 )
when ADC3 < ADC, temperature compensation is required, including:
P dBm ＝(a 1 *T 2 +b 1 *T+c 1 )*ADC+(a 2 *T 2 +b 2 *T+c 2 )
wherein a is 1 、b 1 、c 1 、a 2 、b 2 、c 2 And obtaining the target according to the segmentation fitting of working sections (LV 1-1.K/C, LV1-2.K/C and LV 1-3.K/C).
It will be understood by those skilled in the art that the foregoing is only an exemplary embodiment of the present invention, and is not intended to limit the invention to the particular forms disclosed, since various modifications, substitutions and improvements within the spirit and scope of the invention are possible and within the scope of the appended claims.
Claims (9)
1. A temperature simulation compensation method for a photoelectric detection device is characterized by comprising the following steps:
for a photoelectric detection device for specific measurement, a second-order polynomial function of working temperature is adopted to respectively carry out regression fitting on the slope and/or intercept of the linear relation between the light power value and the output quantity, and the second-order polynomial function of the slope and the working temperature and/or the second-order polynomial function of the slope and the working temperature obtained by fitting are adopted to carry out temperature compensation on the light power value according to the working temperature;
dark current compensation power P for regression fitting by using second-order polynomial function dark And performing dark current compensation on the light power value according to the working temperature by adopting a second-order polynomial function of dark current compensation power and the working temperature obtained by fitting, and detecting power P compensated by the temperature and the dark current dBm The calculation is as follows:
P dBm ＝mw2dB(dB2mw((a 1 *T 2 +b 1 *T+c 1 )*OUTPUT+(a 2 *T 2 +b 2 *T+c 2 ))-dB2mw(P dark ))
wherein dB2mW () is a conversion function to convert dBm value to mW value
mW2dB () is a conversion function that converts mW values to dBm values
P dark ＝a 3 *T 2 +b 3 *T+c 3
Wherein, a 3 、b 3 、c 3 Is a parameter of a second order polynomial function.
2. The method for analog compensation of temperature of a photo-detection device as claimed in claim 1, wherein the OUTPUT is a logarithmic value of the ADC data sampled by the interface and the detection power P when the photo-detection device is in a specific linear operation section dbm The linear relationship of (a) is expressed as:
P dbm ＝K*OUTPUT+C
where K is the slope and C is the intercept.
3. The method for temperature analog compensation of a photodetecting device according to claim 1 or 2, wherein the slope K and intercept C of the logarithmic relationship of the optical power value and the output quantity are respectively fitted with a second order polynomial function of temperature as follows:
K＝a 1 *T 2 +b 1 *T+c 1
C＝a 2 *T 2 +b 2 *T+c 2
wherein T is the working temperature, a 1 、b 1 、c 1 、a 2 、b 2 、c 2 Is a second order polynomial functionThe parameters of the numbers are determined by data fitting.
4. The method for temperature analog compensation of a photodetection device according to claim 1, wherein the second-order polynomial function of slope and operating temperature and the second-order polynomial function of slope and operating temperature obtained by fitting are used to perform temperature compensation on the photodetection power value according to the operating temperature, and the temperature-compensated detection power P is used dBm The calculation is as follows:
P dBm ＝(a 1 *T 2 +b 1 *T+c 1 )*OUTPUT+(a 2 *T 2 +b 2 *T+c 2 )。
5. the temperature analog compensation system of the photoelectric detection device is characterized by comprising a temperature sensor, a memory, a processor and a computer program which is stored on the memory and can run on the processor; the temperature sensor is used for measuring the working temperature of the photoelectric detector, and the processor is used for implementing the temperature simulation compensation method of the photoelectric detection device in any one of claims 1 to 4 to perform linear fitting and temperature compensation on the logarithm of the output quantity of the photoelectric detector according to the working temperature of the photoelectric detector when the computer program is executed, so as to obtain the detected optical power.
6. A photoelectric detection system, comprising a photoelectric detection device and the temperature simulation compensation system of the photoelectric detection device as claimed in claim 5, wherein the output of the photoelectric detection device is output to the temperature simulation compensation system of the photoelectric detection device, and the temperature simulation compensation system of the photoelectric detection device performs linear fitting and temperature compensation on the output of the photoelectric detector to obtain the detected optical power.
7. The photodetection system according to claim 6 wherein the photodetection means is a linear photodetector or a logarithmic photodetector.
8. The photodetection system according to claim 7 wherein the photodetection means is a linear photodetector comprising a photodiode, a transimpedance amplifier and an operational amplifier in series; the transimpedance amplifier comprises a plurality of control ends and a plurality of shunt resistors, wherein the control ends of the transimpedance amplifier change the electrical performance of the photoelectric detection device by enabling different shunt resistors to be in an access or non-access state, so that the linear photoelectric detector is in different specific linear working sections; the output ends of the trans-impedance amplifier and the operational amplifier respectively output the output quantities of the photoelectric detectors under the electrical properties of different electric detection devices; the temperature simulation compensation system of the photoelectric detection device determines the electrical performance of the photoelectric detection device by reading signals of an access port and a control end of a trans-impedance amplifier, and compensates power P by adopting slope K, intercept C and/or dark current under the electrical performance of the corresponding photoelectric detection device dark The slope K, intercept C, and/or dark current compensation power P used for the linear fit of the parameter calculation of the second order function of (2) dark And performing linear fitting on the output quantity of the photoelectric detector to obtain the detection optical power.
9. The photodetection system according to claim 7 wherein said photodetection device is a logarithmic photodetector comprising a photodiode, a logarithmic transimpedance amplifier, and an operational amplifier connected in series; the temperature analog compensation system of the photoelectric detection device acquires the output quantity of the logarithmic photoelectric detector, namely interface sampling ADC data, determines the linear section where the interface sampling ADC data is located according to the interface sampling ADC data, and compensates the power P by adopting the slope K, the intercept C and/or the dark current of the corresponding linear section dark The slope K, intercept C, and/or dark current compensation power P used for the parametric calculation linear fit of the second order function dark And performing linear fitting on the output quantity of the photoelectric detector to obtain the detected optical power.
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