CN113673812A - Method and device for evaluating production efficiency of semiconductor equipment - Google Patents
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Abstract
The application provides an evaluation method and a device for production efficiency of semiconductor equipment, wherein the evaluation method for the production efficiency of the semiconductor equipment comprises the following steps: providing a semiconductor device comprising at least one production subunit; obtaining production parameters of the semiconductor equipment for producing a plurality of wafers in batches, and determining the time interval between the production end times of continuous batches according to the production parameters; acquiring the in-out time of each wafer in each batch in entering and exiting each production subunit, and respectively determining the residence time of all wafers in each batch in each production subunit according to the in-out time; and counting the ratio between the residence time and the time interval, and evaluating the production efficiency of the semiconductor equipment. Above-mentioned technical scheme can be quick fix a position out bottleneck subunit to can the production unit that reflects the limiting equipment production efficiency that can be audio-visual and other production units can promote the scope.
Description
Technical Field
The present disclosure relates to the field of semiconductor manufacturing, and more particularly, to a method and an apparatus for evaluating production efficiency of a semiconductor device.
Background
In the field of semiconductor manufacturing, the throughput of wafers in a unit time is generally used as a judgment standard for measuring the production capacity of equipment, and although the method can reflect the production efficiency of the equipment as a whole, it is difficult to accurately judge which production units limit the production capacity of the equipment, so that the production capacity of the units cannot be improved in a targeted manner, and the production efficiency of the equipment is difficult to improve.
Therefore, how to intuitively judge and reflect the production units which limit the production efficiency of the equipment is a problem to be solved by the prior art to quickly evaluate the production efficiency of the semiconductor equipment.
Disclosure of Invention
In view of this, embodiments of the present disclosure provide a method and an apparatus for evaluating production efficiency of a semiconductor device, which can calculate a time ratio of each production unit in a whole wafer manufacturing cycle by obtaining an effective working time of each production unit when a wafer is manufactured, intuitively reflect a range that can be improved by a production unit that limits production efficiency of the device and other production units, and quickly evaluate the production efficiency of the semiconductor device.
In order to solve the above problems, the present application provides a method for evaluating production efficiency of a semiconductor device, comprising: providing a semiconductor device comprising at least one production subunit; obtaining production parameters of the semiconductor equipment for producing a plurality of wafers in batches, and determining the time interval between the production end times of continuous batches according to the production parameters; acquiring the in-out time of each wafer in each batch in entering and exiting each production subunit, and respectively determining the residence time of all wafers in each batch in each production subunit according to the in-out time; and counting the ratio between the residence time and the time interval, and evaluating the production efficiency of the semiconductor equipment.
In some embodiments, the obtaining the manufacturing parameters for the semiconductor device to batch-produce a plurality of wafers is obtaining the parameter values required to be set during the production of each batch of wafers, and includes: gas, flow, and time.
In some embodiments, the statistical residence time is a total residence time of all the wafers in the batch in each production subunit, and the statistical method is to sum the residence time of each wafer in each production subunit in turn.
In some embodiments, said counting a ratio between said dwell time and said time interval, and evaluating a production efficiency of said semiconductor device, comprises:
determining the real utilization rate of each production subunit, and evaluating the production efficiency of the semiconductor equipment, wherein the real utilization rate of each subunit is as follows:
wherein the Takt time represents the time interval; ti denotes the residence time of the ith wafer in the production subunit I, I is 1, …, N, within the time range of the semiconductor device in the time interval.
In some embodiments, counting a ratio between the dwell time and the time interval and evaluating the production efficiency of the semiconductor device comprises:
determining the promotion potential of each production subunit, and evaluating the production efficiency of the semiconductor equipment, wherein the promotion potential of each subunit is as follows:
M＝1-RUDTI (1)
wherein the Takt time represents the time interval; ti denotes the residence time of the ith wafer in the production subunit I, I is 1, …, N, within the time range of the semiconductor device in the time interval.
In some embodiments, the method for evaluating the production efficiency of a semiconductor device further comprises: and sequencing the counted residence time and the proportion of the time intervals according to the proportion, and defining the production subunit with the maximum proportion value as a bottleneck subunit.
In some embodiments, the method for evaluating the production efficiency of a semiconductor device further includes: and counting the transmission time of the wafer in each subunit, the automatic maintenance time of the equipment and/or the idle time of the subunits.
In some embodiments, the ratio of the transfer time of the wafer in each sub-unit, the automatic equipment maintenance time and/or the idle time of the sub-unit in the time interval is calculated according to the statistical result of the transfer time of the wafer in each sub-unit, the automatic equipment maintenance time and/or the idle time of the sub-unit.
According to various embodiments, the present application provides an evaluation apparatus of production efficiency of a semiconductor device, including: a production unit providing a semiconductor device comprising at least one production subunit; the measuring and calculating unit is used for acquiring production parameters of the semiconductor equipment for producing a plurality of wafers in batches, and determining the time interval between the production end times of continuous batches according to the production parameters; the statistical unit is used for acquiring the in-out time of each wafer in each batch in each production subunit, and respectively determining the residence time of all wafers in each batch in each production subunit according to the in-out time; and an evaluation unit for counting the ratio between the stay time and the time interval and evaluating the production efficiency of the semiconductor device.
In some embodiments, the obtaining of the production parameter for the semiconductor device to produce a plurality of wafers in batches is obtaining a processing parameter value required to be set when each batch of wafers is produced.
In some embodiments, the statistical residence time is a total residence time of all the wafers in the batch in each production subunit, and the statistical method is to calculate the residence time of each wafer in each production subunit by summation in turn.
In some embodiments said counting a ratio between said dwell time and said time interval, and evaluating a production efficiency of said semiconductor device, comprises:
determining the real utilization rate of each production subunit, and evaluating the production efficiency of the semiconductor equipment, wherein the real utilization rate of each subunit is as follows:
wherein the Takt time represents the time interval; ti denotes the residence time of the ith wafer in the production subunit I, I is 1, …, N, within the time range of the semiconductor device in the time interval.
In some embodiments, the ratio between the dwell time and the time interval is counted, and the production efficiency of the semiconductor device is evaluated, including:
determining the promotion potential of each production subunit, and evaluating the production efficiency of the semiconductor equipment, wherein the promotion potential of each subunit is as follows:
M＝1-RUDTI (1)
wherein the Takt time represents the time interval; ti denotes the residence time of the ith wafer in the production subunit I, I is 1, …, N, within the time range of the semiconductor device in the time interval.
In some embodiments, the method for evaluating the production efficiency of a semiconductor device further comprises: and sequencing the counted residence time and the proportion of the time intervals according to the proportion, and defining the production subunit with the maximum proportion value as a bottleneck subunit.
The method for evaluating the production efficiency of a semiconductor device described in some embodiments further includes: and counting the transmission time of the wafer in each subunit, the automatic maintenance time of the equipment and/or the idle time of the subunits.
In some embodiments, the ratio of the transfer time of the wafer in the sub-unit, the automatic equipment maintenance time and/or the idle time of the sub-unit in the time interval is calculated according to the statistical result of the transfer time of the wafer in each production sub-unit, the automatic equipment maintenance time and/or the idle time of the sub-unit.
According to the technical scheme, the effective working time of each production unit during wafer manufacturing is obtained, the real utilization rate of each production subunit is determined, and the production efficiency of each production subunit of the equipment can be accurately analyzed. According to the technical scheme, the time proportion of each production unit in the whole wafer manufacturing cycle is calculated, the production units which limit the production efficiency of the equipment, namely the bottleneck sub-unit and the ranges which can be improved by other production units, are reflected visually, so that the production efficiency of the semiconductor equipment is evaluated, and the bottleneck sub-unit is positioned quickly, so that the later-stage targeted improvement of the production efficiency is facilitated.
Drawings
Fig. 1 is a flowchart illustrating a method for evaluating the production efficiency of a semiconductor device according to an embodiment of the present disclosure.
FIG. 2 is a schematic diagram of the operation time of a semiconductor device manufacturing sub-unit according to an embodiment of the present application.
Fig. 3 is a schematic diagram of a method for evaluating the production efficiency of a semiconductor device according to an embodiment of the present application.
Fig. 4 is a block diagram of an apparatus for evaluating the production efficiency of a semiconductor device according to an embodiment of the present application.
FIG. 5 is a schematic time distribution diagram according to an embodiment of the present application.
DETAILED DESCRIPTION OF EMBODIMENT (S) OF INVENTION
The following describes in detail specific embodiments of the method and apparatus for evaluating the production efficiency of a semiconductor device provided in the present application with reference to the drawings.
Fig. 1 is a flowchart illustrating a method for evaluating the production efficiency of a semiconductor device according to an embodiment of the present disclosure. The method for evaluating the production efficiency of the semiconductor equipment comprises the following steps: step S101, providing a semiconductor device, wherein the semiconductor device comprises at least one production subunit; step S102, obtaining production parameters of the semiconductor equipment for producing a plurality of wafers in batches, and determining time intervals between production end times of continuous batches according to the production parameters; step S103, obtaining the in-out time of each wafer in each batch in each production subunit, and respectively determining the residence time of all wafers in each batch in each production subunit according to the in-out time; and step S104, counting the ratio between the residence time and the time interval, and evaluating the production efficiency of the semiconductor equipment. The embodiment of the application evaluates the production efficiency of the semiconductor equipment, such as a production subunit of the semiconductor equipment, by counting the production time ratio of the production wafers within the time interval range of the semiconductor equipment machine, and can be widely applied to high-integration precision machines of various semiconductor equipment and the like.
Referring to fig. 1, in step S101, a semiconductor device is provided. The semiconductor device includes at least one production subunit. The production sub-unit is a production unit that independently performs a process sub-step, and examples of the production sub-unit include a process sub-step of polishing a wafer, growing a film, patterning, doping, and heat treatment. Since the sub-steps of polishing, film growth, patterning, doping, and heat treatment are repeated several times during the manufacturing process of the semiconductor, the same wafer enters the same production sub-unit several times to perform the above sub-steps.
Referring to fig. 1, in step S102, acquiring the production parameters of the semiconductor device for producing a plurality of wafers in batches, and determining the time interval between the production end times of consecutive batches according to the production parameters, wherein the acquiring the production parameters of the semiconductor device for producing a plurality of wafers in batches is to acquire the processing parameter values required to be set during the production of each batch of wafers, and includes: gas, flow, temperature, time, etc. The parameter values to be set for each batch of wafer production may be obtained according to production experience of each process substep, or may be obtained by database calling or the like. And respectively presetting the process parameters of each subunit in different process substeps according to the acquired production parameters, so as to be used as the basis for each production subunit in executing the process substeps.
The time interval between the production end times of the consecutive batches, i.e. the Takt time, is data that can be obtained by calculation through the production parameter (recipe) as described above, although the specific calculation method is not particularly limited, and can be realized according to any acceptable calculation theory, and these should be included in the scope of the present application.
Referring to fig. 1, in step S103, the in-out time of each wafer in each batch in each production subunit is obtained, and the residence time of all wafers in each batch in each production subunit is determined according to the in-out time. As mentioned above, the same wafer will enter the same production subunit for multiple times to perform the processing sub-steps of polishing, film growth, patterning, doping, heat treatment, etc., so the obtaining the in-out time of each wafer in each batch entering and exiting each production subunit includes: the time of the first wafer entering and exiting the first production subunit each time, the time of the first wafer entering and exiting the second production subunit each time, and the time of the first wafer entering and exiting the Nth production subunit each time. The obtaining the in-out time for each wafer in each batch to enter and exit each production subunit further comprises: the time of the second wafer entering and exiting the first production subunit each time, the time of the second wafer entering and exiting the second production subunit each time, and the time of the second wafer entering and exiting the Nth production subunit each time; the time of the Nth wafer entering and exiting the first production subunit each time, the time of the Nth wafer entering and exiting the second production subunit each time, and the time of the Nth wafer entering and exiting the Nth production subunit each time.
FIG. 2 is a schematic diagram of the operation time of a semiconductor device manufacturing sub-unit according to an embodiment of the present application. The statistical residence time is the total residence time of all the wafers in each batch in each production subunit, and the statistical mode is that the residence time of each wafer in each production subunit is summed and calculated in turn. Referring to FIG. 2, N1 to N5 are production subunits, T1 is Takt time, T2 is time from the start of a production task to the end of the production task, the time of the start of Takt time is later than the time of the start of the production task, Takthe time t ends earlier than the production task ends. The total residence time is described below by taking the film-forming subunit as an example, and the time for the first wafer to enter and exit the film-forming subunit when the field oxide layer is formed is set as t11The time of the first wafer entering and exiting the film growth subunit when depositing the polysilicon as the gate structure is t12The time for the first wafer to enter and exit the thin film growth subunit when the oxide film is formed in the source and drain regions is t13The time for the first wafer to enter and exit the film growth subunit during the deposition of the conductive metal layer is t14The time for the first wafer to enter and exit the thin film growth subunit when the passivation layer is formed is t15The residence time t of the first wafer in the film growth subunit1＝t11+t12+t13+t14+t15. As mentioned above, the second wafer stays in the film growth subunit for a time t2The residence time of the Nth wafer in the film growth subunit is tN. The total residence time of all wafers in the film production subunit is t1+t2+……+tN. The total residence time of all wafers in the other growth subunits is calculated as described above.
Continuing to refer to fig. 1, step S104, the ratio between the dwell time and the time interval is counted to evaluate the production efficiency of the semiconductor device.
Referring to fig. 3, in some embodiments, evaluating the production efficiency of the semiconductor device may include: determining the real utilization rate of each production subunit, and evaluating the production efficiency of the semiconductor equipment, wherein the real utilization rate of each subunit is as follows:
wherein the Takt time represents the time interval; ti denotes the residence time of the ith wafer in the production subunit I, I is 1, …, N, within the time range of the semiconductor device in the time interval. That is, the actual working time of the production subunit for producing the batch of wafers is determined by the total time of all the wafers in each batch in the production subunit, the occupied time proportion of the production subunit in the time interval.
In other embodiments, evaluating the production efficiency of the semiconductor device may obtain an improvement space of the utilization rate of the production subunit based on the real utilization rate of the production subunit, for example, and in detail, for example, the embodiments include: determining the promotion potential of each production subunit, and evaluating the production efficiency of the semiconductor equipment, wherein the promotion potential of each subunit is as follows:
M＝1-RUDTI (1)
wherein the Takt time represents the time interval; ti denotes the residence time of the ith wafer in the production subunit I, I is 1, …, N, within the time range of the semiconductor device in the time interval. The method for evaluating the production efficiency of the semiconductor equipment can evaluate and acquire the promoted space of each production subunit, so that an optimizable efficiency promoting mode can be found for the production subunits with high utilization rate promoted space, for example, non-process time can be reduced, such as conveying time, automatic equipment maintenance time, idle time and the like of wafers in the production subunits except production and processing time. In some embodiments, the method for evaluating the production efficiency of a semiconductor device further comprises: and sequencing the counted residence time and the proportion of the time intervals according to the proportion, and defining the production subunit with the maximum proportion value as a bottleneck subunit.
Continuing with fig. 3, Takt time represents the time interval, N1-N5 are production subunits, TN5 is the total residence time of all wafers in the production subunit N5, M is the lifting potential of the production subunit N5, the percentage of the residence time and the time interval counted for each production unit is sorted in proportion, and the production subunit N1 defining the maximum proportion value is the bottleneck subunit. The quick determination of the bottleneck subunit is favorable for the targeted improvement of the production efficiency in the later period. Based on the method and the device, the utilization rate can be analyzed quickly, the priority level of analysis for each production subunit is given, and meanwhile the capacity condition of the production line of the batch of wafers is obtained based on the bottleneck subunit, so that the number of production machines such as the production subunit can be increased, the capacity of the bottleneck can be improved, the utilization rate of the production subunit can be reduced, the bottleneck can be weakened, and meanwhile, the utilization rate of the production subunit with low proportion numerical value can be improved, and the non-processing time can be reduced.
In another embodiment, the method for evaluating the production efficiency of a semiconductor device further includes: and counting the transmission time of the wafer in each subunit, the automatic maintenance time of the equipment and/or the idle time of the subunits. And calculating the ratio of the transmission time of the wafer in each production subunit, the automatic equipment maintenance time and/or the idle time of the subunit in the time interval according to the statistical result of the transmission time of the wafer in each production subunit, the automatic equipment maintenance time and/or the idle time of the subunit. FIG. 5 is a schematic time distribution diagram according to an embodiment of the present application. Referring to FIG. 5, the abscissa T is the time axis TiFor the residence time of the ith wafer in one production subunit, mjFor the jth transfer time, p is an idle time, and n is an automatic equipment maintenance time, the transfer time of the wafer in each sub-unit, the automatic equipment maintenance time and/or the idle time of the sub-unit can be counted, and the production efficiency of the semiconductor equipment can be evaluated according to the above counting result.
According to the technical scheme, the effective working time of each production unit during wafer manufacturing is obtained, the real utilization rate of each production subunit is determined, and the production efficiency of each production subunit of the equipment can be accurately analyzed. According to the technical scheme, the time proportion of each production unit in the whole wafer manufacturing cycle is calculated, the production units which limit the production efficiency of the equipment, namely the bottleneck sub-unit and the ranges which can be improved by other production units, are reflected visually, so that the production efficiency of the semiconductor equipment is evaluated, and the bottleneck sub-unit is positioned quickly, so that the later-stage targeted improvement of the production efficiency is facilitated. .
Fig. 4 is a block diagram of an apparatus for evaluating the production efficiency of a semiconductor device according to an embodiment of the present application. The evaluation device for the production efficiency of the semiconductor equipment comprises: a production unit U1 providing a semiconductor device comprising at least one production sub-unit; the measuring and calculating unit U2 is used for acquiring production parameters of the semiconductor equipment for producing a plurality of wafers in batches, and determining the time interval between the production end times of continuous batches according to the production parameters; the statistical unit U3 is used for acquiring the in-out time of each wafer in each batch in each production subunit, and respectively determining the residence time of all wafers in each batch in each production subunit according to the in-out time; and an evaluation unit U4 for counting the ratio between the stay time and the time interval and evaluating the production efficiency of the semiconductor device. The embodiment of the application evaluates the production efficiency of the semiconductor equipment, such as a production subunit of the semiconductor equipment, by counting the production time ratio of the production wafers within the time interval range of the semiconductor equipment machine, and can be widely applied to high-integration precision machines of various semiconductor equipment and the like
Referring to fig. 4, a semiconductor device is provided by the production unit U1, the semiconductor device including at least one production subunit. The production sub-unit is a production unit which independently completes a processing sub-step, and comprises the processing sub-steps of polishing, film growth, patterning, doping, heat treatment and the like of a wafer. Since the sub-steps of polishing, film growth, patterning, doping, and heat treatment are repeated several times during the manufacturing process of the semiconductor, the same wafer enters the same production sub-unit several times to perform the above sub-steps.
The obtaining of the production parameters of the semiconductor device producing a plurality of wafers in batches by the evaluation unit U2 is to obtain parameter values required to be set during the production of each batch of wafers, and includes: gas, flow, temperature and time. The parameter values to be set for each batch of wafer production may be obtained according to production experience of each process substep, or may be obtained by database calling or the like. And respectively presetting the process parameters of each subunit in different process substeps according to the acquired production parameters, so as to be used as the basis for each production subunit in executing the process substeps.
The time interval between the production end times of the consecutive batches, i.e. the Takt time, is data that can be obtained by calculation through the production parameter (recipe) as described above, although the specific calculation method is not particularly limited, and can be realized according to any acceptable calculation theory, and these should be included in the scope of the present application.
Referring to fig. 3, the entry and exit time of each wafer in each batch entering and exiting each production subunit is obtained through the statistical unit U3, and the residence time of all wafers in each batch in each production subunit is determined according to the entry and exit time. As mentioned above, the same wafer will enter the same production subunit for multiple times to perform the processing sub-steps of polishing, film growth, patterning, doping, heat treatment, etc., so the obtaining the in-out time of each wafer in each batch entering and exiting each production subunit includes: the time of the first wafer entering and exiting the first production subunit each time, the time of the first wafer entering and exiting the second production subunit each time, and the time of the first wafer entering and exiting the Nth production subunit each time. The obtaining the in-out time for each wafer in each batch to enter and exit each production subunit further comprises: the time of the second wafer entering and exiting the first production subunit each time, the time of the second wafer entering and exiting the second production subunit each time, and the time of the second wafer entering and exiting the Nth production subunit each time; the time of the Nth wafer entering and exiting the first production subunit each time, the time of the Nth wafer entering and exiting the second production subunit each time, and the time of the Nth wafer entering and exiting the Nth production subunit each time.
FIG. 2 is a schematic diagram of the operation time of a semiconductor device manufacturing sub-unit according to an embodiment of the present application. The statistical residence time is a statistical instituteAnd the statistical mode is that the total residence time of all the wafers in each batch in each production subunit is calculated by summing the residence time of each wafer in each production subunit in turn. Referring to FIG. 2, N1 through N5 are production subunits, wherein the time of the start of the Takt time may be later than the time of the start of the production task, and the time of the end of the Takt time may be earlier than the time of the end of the production task. The total residence time is described below by taking the film-forming subunit as an example, and the time for the first wafer to enter and exit the film-forming subunit when the field oxide layer is formed is set as t11The time of the first wafer entering and exiting the film growth subunit when depositing the polysilicon as the gate structure is t12The time for the first wafer to enter and exit the thin film growth subunit when the oxide film is formed in the source and drain regions is t13The time for the first wafer to enter and exit the film growth subunit during the deposition of the conductive metal layer is t14The time for the first wafer to enter and exit the thin film growth subunit when the passivation layer is formed is t15The residence time t of the first wafer in the film growth subunit1＝t11+t12+t13+t14+t15. As mentioned above, the second wafer stays in the film growth subunit for a time t2The residence time of the Nth wafer in the film growth subunit is tN. The total residence time of all wafers in the film production subunit is t1+t2++tN. The total residence time of all wafers in the other growth subunits is calculated as described above.
With continuing reference to fig. 4, the production efficiency of the semiconductor device is evaluated by evaluating the ratio between the residence time and the time interval by an evaluation unit U4.
Referring to fig. 3, in some embodiments, evaluating the production efficiency of the semiconductor device may include: determining the real utilization rate of each production subunit, and evaluating the production efficiency of the semiconductor equipment, wherein the real utilization rate of each subunit is as follows:
wherein the Takt time represents the time interval; ti denotes the residence time of the ith wafer in the production subunit I, I is 1, …, N, within the time range of the semiconductor device in the time interval. That is, the actual working time of the production subunit for producing the batch of wafers is determined by the total time of all the wafers in each batch in the production subunit, the occupied time proportion of the production subunit in the time interval.
In other embodiments, the evaluating the production efficiency of the semiconductor device may obtain an improvement space of the utilization rate of the production subunit based on the real utilization rate of the production subunit, for example, and in detail, the embodiment includes: determining the promotion potential of each production subunit, and evaluating the production efficiency of the semiconductor equipment, wherein the promotion potential of each subunit is as follows:
M＝1-RUDTI (1)
wherein the Takt time represents the time interval; ti denotes the residence time of the ith wafer in the production subunit I, I is 1, …, N, within the time range of the semiconductor device in the time interval. The method for evaluating the production efficiency of the semiconductor equipment can evaluate and acquire the promoted space of each production subunit, so that an optimizable efficiency promoting mode can be found for the production subunits with high utilization rate promoted space, for example, non-process time can be reduced, such as conveying time, automatic equipment maintenance time, idle time and the like of wafers in the production subunits except production and processing time. In some embodiments, the method for evaluating the production efficiency of a semiconductor device further comprises: and sequencing the counted residence time and the proportion of the time intervals according to the proportion, and defining the production subunit with the maximum proportion value as a bottleneck subunit.
Continuing to refer to fig. 3, Takt time represents the time interval, N1-N5 are production subunits, TN5 is the total residence time of all wafers in the production subunit N5, M is the lifting potential of the production subunit N5, the percentage of the total residence time and the time interval counted by each production unit is sorted in proportion, and the production subunit N1 with the maximum proportion value is defined as a bottleneck subunit. The quick determination of the bottleneck subunit is favorable for the targeted improvement of the production efficiency in the later period. Based on the method and the device, the utilization rate can be analyzed quickly, the priority level of analysis for each production subunit is given, and meanwhile the capacity condition of the production line of the batch of wafers is obtained based on the bottleneck subunit, so that the number of production machines such as the production subunit can be increased, the capacity of the bottleneck can be improved, the utilization rate of the production subunit can be reduced, the bottleneck can be weakened, and meanwhile, the utilization rate of the production subunit with low proportion numerical value can be improved, and the non-processing time can be reduced.
In other embodiments, the statistical unit U3 also counts wafer transfer time, equipment auto-maintenance time, and/or idle time for each sub-unit. And calculating the ratio of the transmission time of the wafer in each production subunit, the automatic equipment maintenance time and/or the idle time of the subunit in the time interval according to the statistical result of the transmission time of the wafer in each production subunit, the automatic equipment maintenance time and/or the idle time of the subunit. FIG. 5 is a schematic time distribution diagram according to an embodiment of the present application. Referring to FIG. 5, the abscissa T is the time axis TiFor the residence time of the ith wafer in one production subunit, mjFor the jth transfer time, p is an idle time, and n is an automatic equipment maintenance time, the statistical unit U3 may count the transfer time, the automatic equipment maintenance time, and/or the idle time of the sub-units of the wafer, and evaluate the production efficiency of the semiconductor equipment according to the above statistical result.
According to the technical scheme, the production unit U1, the measuring and calculating unit U2, the statistical unit U3 and the evaluation unit U4 are used for obtaining the effective working time of each production unit during wafer manufacturing, the real utilization rate of each production subunit is determined, and the production efficiency of each production subunit of equipment can be accurately analyzed. According to the technical scheme, the time proportion of each production unit in the whole wafer manufacturing cycle is calculated, the production units which limit the production efficiency of the equipment, namely the bottleneck sub-unit and the ranges which can be improved by other production units, are reflected visually, so that the production efficiency of the semiconductor equipment is evaluated, and the bottleneck sub-unit is positioned quickly, so that the later-stage targeted improvement of the production efficiency is facilitated.
The foregoing is illustrative of only a few embodiments of the present application and it will be appreciated by those skilled in the art that various modifications and adaptations can be made without departing from the principles of the present application and are intended to be within the scope of the present application.
Claims (15)
1. A method for evaluating production efficiency of a semiconductor device, comprising:
providing a semiconductor device comprising at least one production subunit;
obtaining production parameters of the semiconductor equipment for producing a plurality of wafers in batches, and determining the time interval between the production end times of continuous batches according to the production parameters;
acquiring the in-out time of each wafer in each batch in entering and exiting each production subunit, and respectively determining the residence time of all wafers in each batch in each production subunit according to the in-out time; and counting the ratio between the residence time and the time interval, and evaluating the production efficiency of the semiconductor equipment.
2. The method as claimed in claim 1, wherein the obtaining of the manufacturing parameters for batch production of the plurality of wafers of the semiconductor device is obtaining the processing parameter values required to be set for each batch of wafers.
3. The method of claim 2, wherein the statistical residence time is a total residence time of all wafers in each lot in each production subunit, and the statistical method is a summation of the residence times of all wafers in each production subunit.
4. The method of evaluating the production efficiency of a semiconductor device according to claim 1, wherein the evaluating the production efficiency of the semiconductor device by counting a ratio between the staying time and the time interval comprises:
determining the real utilization rate of each production subunit, and evaluating the production efficiency of the semiconductor equipment, wherein the real utilization rate of each subunit is as follows:
wherein Takt time represents the time interval; t is tiAnd the residence time of the ith wafer in the production subunit I in the time range of the semiconductor equipment in the time interval is represented, wherein I is 1, … and N.
5. The method of evaluating the production efficiency of a semiconductor device according to claim 1, wherein the evaluating the production efficiency of the semiconductor device by counting a ratio between the staying time and the time interval comprises:
determining the promotion potential of each production subunit, and evaluating the production efficiency of the semiconductor equipment, wherein the promotion potential of each subunit is as follows:
M＝1-RUDTI (1)
wherein Takt time represents the time interval；tiAnd the residence time of the ith wafer in the production subunit I in the time range of the semiconductor equipment in the time interval is represented, wherein I is 1, … and N.
6. The method for evaluating the production efficiency of a semiconductor device according to any one of claims 1 to 5, further comprising: and sequencing the counted residence time and the proportion of the time intervals according to the proportion, and defining the production subunit with the maximum proportion value as a bottleneck subunit.
7. The method of evaluating the production efficiency of a semiconductor device according to claim 1, further comprising: and counting the transmission time of the wafer in each subunit, the automatic maintenance time of the equipment and/or the idle time of the subunits.
8. The method of evaluating the production efficiency of a semiconductor device according to claim 7, further comprising: and calculating the ratio of the transmission time of the wafer in each subunit, the automatic equipment maintenance time and/or the idle time of the production subunit in the time interval according to the result of counting the transmission time of the wafer in each subunit, the automatic equipment maintenance time and/or the idle time of the subunits.
9. An evaluation apparatus for production efficiency of a semiconductor device, comprising:
a production unit providing a semiconductor device comprising at least one production subunit;
the measuring and calculating unit is used for acquiring production parameters of the semiconductor equipment for producing a plurality of wafers in batches, and determining the time interval between the production end times of continuous batches according to the production parameters;
the statistical unit is used for acquiring the in-out time of each wafer in each batch in each production subunit, and respectively determining the residence time of all wafers in each batch in each production subunit according to the in-out time;
and an evaluation unit for counting the ratio between the stay time and the time interval and evaluating the production efficiency of the semiconductor device.
10. The apparatus of claim 9, wherein the obtaining of the manufacturing parameters for batch-wise production of the plurality of wafers is obtaining the processing parameter values required to be set for each batch of wafers.
11. The apparatus for evaluating the production efficiency of semiconductor devices as recited in claim 10, wherein the statistical residence time is a total residence time of all the wafers in each lot in each production subunit, and the statistical manner is a summation of the residence times of each wafer in each production subunit.
12. The apparatus for evaluating production efficiency of a semiconductor device according to claim 9,
counting the ratio between the residence time and the time interval, and evaluating the production efficiency of the semiconductor equipment, wherein the method comprises the following steps:
determining the real utilization rate of each production subunit, and evaluating the production efficiency of the semiconductor equipment, wherein the real utilization rate of each subunit is as follows:
wherein Takt time represents the time interval; t is tiAnd the residence time of the ith wafer in the production subunit I in the time range of the semiconductor equipment in the time interval is represented, wherein I is 1, … and N.
13. The apparatus for evaluating production efficiency of a semiconductor device according to claim 9, wherein the evaluating production efficiency of the semiconductor device by counting a ratio between the stay time and the time interval comprises:
determining the promotion potential of each production subunit, and evaluating the production efficiency of the semiconductor equipment, wherein the promotion potential of each subunit is as follows:
M＝1-RUDTI (1)
wherein Takt time represents the time interval; t is tiAnd the residence time of the ith wafer in the production subunit I in the time range of the semiconductor equipment in the time interval is represented, wherein I is 1, … and N.
14. The apparatus for evaluating production efficiency of a semiconductor device according to any one of claims 9 to 13, wherein the method for evaluating production efficiency of a semiconductor device further comprises: and sequencing the counted residence time and the proportion of the time intervals according to the proportion, and defining the production subunit with the maximum proportion value as a bottleneck subunit.
15. The apparatus for evaluating the production efficiency of semiconductor devices as claimed in claim 9, wherein the statistical unit further counts a transfer time of a wafer in each production sub-unit, an automatic equipment maintenance time and/or an idle time of the sub-unit.
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