CN113668047A - Device for pulling monocrystalline silicon in double-frequency induction furnace - Google Patents
Device for pulling monocrystalline silicon in double-frequency induction furnace Download PDFInfo
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- CN113668047A CN113668047A CN202110907857.1A CN202110907857A CN113668047A CN 113668047 A CN113668047 A CN 113668047A CN 202110907857 A CN202110907857 A CN 202110907857A CN 113668047 A CN113668047 A CN 113668047A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
The invention discloses a device for pulling monocrystalline silicon in a double-frequency induction furnace, which comprises: a vacuum melting chamber; the quartz crucible is arranged in the vacuum melting chamber; the graphite melter is fixed at the upper part of the quartz crucible, and a liquid outlet for the melted silicon liquid to flow out is formed in the graphite melter; the discharge port of the feeding mechanism is introduced into the graphite melter; the medium-frequency induction coil is sleeved outside the quartz crucible; the low-frequency induction coil is sleeved outside the quartz crucible and is positioned below the medium-frequency induction coil; the water shielding ring is sleeved outside the quartz crucible and is positioned between the medium-frequency induction coil and the low-frequency induction coil; the lifting mechanism is used for providing lifting motion for the medium-frequency induction coil, the low-frequency induction coil and the shielding ring; and the cooler is positioned at the bottom of the quartz crucible.
Description
Technical Field
The application belongs to the technical field of silicon material purification and crystal production, and particularly relates to a device for pulling monocrystalline silicon in a double-frequency induction furnace.
Background
In the solar photovoltaic industry, monocrystalline silicon has gradually replaced polycrystalline silicon as a main substrate for manufacturing solar cells. In order to pursue the objective of "flat-price networking" in the industry, every link before the manufacture of solar cell modules is to minimize the cost as much as possible, and the monocrystalline silicon used as the main substrate has a space available for digging. At present, the method for producing single crystal silicon mainly consists of an electronic-grade zone melting method and a solar-grade "CZ method". The CZ method, which is a main production method of solar grade single crystal silicon, has the following disadvantages: the finished product of the silicon single crystal rod is nearly circular, and needs a diamond wire to be cut square, so that the utilization rate of the silicon single crystal rod is reduced; in the production process, the graphite is heated by using a resistor, and the graphite is thermally conducted to the space to melt the silicon, so that the electrical efficiency is not high; in the crystal pulling process, the solid-liquid interface is not stirred, and crystal growth cannot be more effectively purified.
Disclosure of Invention
In view of this, the embodiment of the application provides a device for pulling monocrystalline silicon in a dual-frequency induction furnace, so as to improve the production efficiency of monocrystalline silicon and reduce the production cost.
According to the embodiment of the application, the device for pulling the monocrystalline silicon in the double-frequency induction furnace comprises:
a vacuum melting chamber;
the quartz crucible is arranged in the vacuum melting chamber;
the graphite melter is fixed at the upper part of the quartz crucible, and a liquid outlet for the melted silicon liquid to flow out is formed in the graphite melter;
the discharge port of the feeding mechanism is communicated with the graphite melter;
the intermediate frequency induction coil is sleeved outside the quartz crucible;
the low-frequency induction coil is sleeved outside the quartz crucible and is positioned below the medium-frequency induction coil;
the shielding ring is sleeved outside the quartz crucible and positioned between the medium-frequency induction coil and the low-frequency induction coil;
the lifting mechanism provides lifting motion for the medium-frequency induction coil, the low-frequency induction coil and the shielding ring; and
a cooler located at the bottom of the quartz crucible.
Further, the quartz crucible is located at a bottom lower than the bottom of the shield ring.
Furthermore, the intermediate frequency induction coil is provided with a corresponding intermediate frequency induction power supply; the low-frequency induction coil is provided with a corresponding low-frequency induction power supply.
Furthermore, the induction frequency of the medium-frequency induction coil is 300Hz to 3000 Hz; the induction frequency of the low-frequency induction coil is 3 Hz-50 Hz.
Furthermore, a charging hole is formed in the vacuum melting chamber and is aligned with the opening end of the graphite melter.
Further, the shielding ring is forcibly cooled by water.
Further, a cooling system is connected to the cooler.
Further, the cooler is gas-cooled or water-cooled.
Further, the cooling medium inlet of the cooler is located at a central position of the cooler.
Further, the cooler is provided with liquid metal liquid with low melting point and high boiling point.
The technical scheme provided by the embodiment of the application can have the following beneficial effects:
according to the embodiment, the graphite melter is heated through medium-frequency induction, the graphite melter melts silicon, and the melted silicon flows into the quartz crucible and is heated and insulated through the same medium-frequency induction coil; after solidification begins, silicon is directionally solidified from bottom to top, and the bottom low-frequency induction coil stirs a solidified solid-liquid interface to provide power for impurities to move to a liquid phase, so that a better segregation effect is achieved. The medium-frequency induction coil, the low-frequency induction coil and the shielding ring are integrally moved upwards through the lifting mechanism, and the growth process of the single crystal is realized through continuous cooling of the cooler. In the process, two coils with different induction frequencies are used, one realizes the heating and melting function, the other realizes the solid-liquid surface stirring function during crystal growth, and the center of the bottom cooler is outwards radiated with strong cold, so that the solid-liquid interface is in an upward convex trend during crystal growth, and the crystal quality is improved; the monocrystalline silicon square ingot obtained by straight pulling reduces subsequent cutting, greatly improves the utilization rate of the final finished product, changes phases and reduces the cost.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the application.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and together with the description, serve to explain the principles of the application.
FIG. 1 is a schematic diagram of an apparatus for pulling single crystal silicon in a dual frequency induction furnace according to one exemplary embodiment.
FIG. 2 is a cross-sectional schematic view of a quartz crucible shown in accordance with an exemplary embodiment.
FIG. 3 is a schematic diagram of a cooler shown in accordance with an exemplary embodiment.
The reference numerals in the figures are: 1. a vacuum pumping device; 2. a vacuum melting chamber; 3. a feeding mechanism; 4. a medium frequency induction power supply; 5. a medium frequency induction coil; 6. a lifting mechanism; 7. a graphite melter; 8. a cooling system; 9. a cooler; 10. a low frequency induction coil; 11. a low frequency inductive power supply; 12. a shield ring; 13. seed crystal; 14. a quartz crucible; 15. a corundum guard plate; 16. low-melting point and high-boiling point molten metal; 17. an inlet; 18. and (7) an outlet.
Detailed Description
Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present application. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the present application, as detailed in the appended claims.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used in this application and the appended claims, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the term "and/or" as used herein refers to and encompasses any and all possible combinations of one or more of the associated listed items.
Referring to fig. 1, an embodiment of the present invention provides an apparatus for pulling single crystal silicon in a dual-frequency induction furnace, which may include: the device comprises a vacuum melting chamber 2, a quartz crucible 14, a graphite melter 7, a feeding mechanism 3, a medium-frequency induction coil 5, a low-frequency induction coil 10, a shielding ring 12, a lifting mechanism 6 and a cooler 9, wherein the quartz crucible 14 is arranged in the vacuum melting chamber 2; the graphite melter 7 is fixed on the upper part of the quartz crucible 14, and a liquid outlet for the melted silicon liquid to flow out is formed in the graphite melter 7; a discharge hole of the feeding mechanism 3 is communicated with the graphite melter 7; the intermediate frequency induction coil 5 is sleeved outside the quartz crucible 14; the low-frequency induction coil 10 is sleeved outside the quartz crucible 14 and is positioned below the medium-frequency induction coil 5; the shielding ring 12 is sleeved outside the quartz crucible 14 and is positioned between the medium-frequency induction coil 5 and the low-frequency induction coil 10; the lifting mechanism 6 provides lifting motion for the medium-frequency induction coil 5, the low-frequency induction coil 10 and the shielding ring 12; the cooler 9 is located at the bottom of the quartz crucible 14.
According to the embodiment, the graphite melter 7 is heated through medium-frequency induction, the graphite melter 7 melts silicon, and the melted silicon flows into the quartz crucible 14 and is heated and insulated through the same medium-frequency induction coil 5; from the beginning of solidification, silicon crystals grow directionally from bottom to top, and silicon liquid at the position of a solid-liquid interface is stirred by the bottom low-frequency induction coil 10 to provide power for impurities in the liquid phase, so that a better segregation effect is achieved. The medium-frequency induction coil 5, the low-frequency induction coil 10 and the shielding ring 12 are moved upwards integrally through the lifting mechanism 6, and the growth process of the single crystal is realized through the continuous cooling of the cooler 9. In the process, two coils with different induction frequencies are used, one realizes the heating and melting function, the other realizes the solid-liquid surface stirring function during crystal growth, and the center of the bottom cooler 9 is outwards radiated with strong cold, so that the solid-liquid interface is in an upward convex trend during crystal growth, and the crystal quality is improved; the monocrystalline silicon square ingot obtained by straight pulling reduces subsequent cutting, greatly improves the utilization rate of the final finished product, changes phases and reduces the cost.
In this embodiment, the vacuum melting chamber 2 can be evacuated by the vacuum evacuation device 1, and the degree of vacuum is less than 10 Pa. Preferably, the feeding mechanism 3 is also vacuumized, and after the required vacuum degree is achieved, the feeding mechanism 3 feeds silicon materials. The vacuum pumping device 1 can adopt an oil booster pump, a roots pump and a mechanical pump.
The medium-frequency induction coil 5 is provided with a corresponding medium-frequency induction power supply 4, the medium-frequency induction coil 5 plays a heating role, the induction frequency can be 300 Hz-3000 Hz, the number of turns of the coil is determined according to the length of a single crystal, and the number of turns can be 10-50 turns. The low frequency induction coil 10 is provided with a corresponding low frequency induction power supply 11. The low-frequency induction coil 10 plays a role in stirring, the induction frequency is ultralow frequency, the range can be 3 Hz-50 Hz, and the number of turns can be 1-5 turns.
Referring to FIG. 2, in the present embodiment, the quartz crucible 14 is a quartz crucible 14 with a corundum shield 15, the quartz crucible 14 is in a softened state at a high temperature of 1450 ℃, and the corundum shield 15 plays a good supporting role.
In order to manufacture a square monocrystalline silicon ingot, the quartz crucible 14, the corundum guard plate 15, the medium-frequency induction coil 5 and the low-frequency induction coil 10 are square, as shown in fig. 2; the shape of the above components can be adjusted according to the shape of the silicon single crystal ingot to be produced.
The lifting mechanism 6 can adopt the existing lifting mechanism, the simplest is that a motor is additionally provided with a rope connected with a motor rotating shaft, and the principle is the same as that of a winch; and a linear motor or a lead screw and nut mechanism and the like can also be directly adopted, which is not described in detail herein. The pulling speed can be 0.2 mm-15 mm/min.
In this embodiment, the quartz crucible 14 is located at a lower bottom than the bottom of the shield ring 12 to ensure that the seed crystal 13 in the quartz crucible 14 is not completely melted.
Initially, the graphite melter 7 is positioned on the top of the intermediate frequency induction coil 5, and under the magnetic field of the intermediate frequency induction coil, the graphite melter generates eddy currents inside the graphite melter to melt silicon materials in the melter rapidly.
In this embodiment, the vacuum melting chamber 2 is provided with a feeding hole, and the feeding hole is aligned with the opening end of the graphite melter 7, so that the material directly enters the graphite melter 7 when falling.
In this embodiment, the size of the liquid outlet is 1mm to 5mm, and if it is too small, it is easy to block, and if it is too large, it is easy to drop unmelted silicon particles. In contrast, for a 1mm liquid outlet, the diameter of the material should not be less than 1mm, and for a 5mm liquid outlet, the diameter of the material should not be less than 5 mm.
In this embodiment, the cooler 9 is connected to a cooling system 8, the cooling system 8 is realized by air cooling (compressed air or other gas) and water cooling, the cooling amount in the early stage of crystal growth is small, gas cooling is applied, and the heat conduction speed in the later stage is slowly converted into water cooling.
Specifically, referring to fig. 3, the cooler 9 may adopt stainless steel as a cavity, and an annular or square surrounding red copper pipeline is formed inside the cooler 9, an inlet 17 of a cooling medium of the cooler 9 is located at the center of the cooler 9, and an outlet 18 is located at the edge, so as to ensure strong cooling in the middle, form a convex solid-liquid interface, and ensure the quality of the pulled single crystal. The liquid in the cavity can be selected from low-melting-point high-boiling-point alloy liquid 16, and the red copper pipeline cooling mode can be air cooling or water cooling.
Preferably, the liquid low-melting-point high-boiling-point metal liquid 16 is preferably a gallium-indium alloy. The gallium-indium alloy is liquid at normal temperature and has better thermal conductivity. In the present embodiment, the shield ring 12 is forcibly cooled by passing water, and the material thereof is preferably austenitic stainless steel. The austenitic stainless steel does not generate or generates extremely small eddy current in an alternating magnetic field, and heating is avoided.
After the vacuum-pumping device 1 vacuumizes the vacuum melting chamber 2, the medium-frequency induction power supply 4 is started, and after a certain time, the feeding mechanism 3 feeds materials into the graphite melter 7. The material is heated and melted by the heat conduction of graphite, flows into the bottom of the quartz crucible 14 from the bottom hole, the silicon liquid is continuously heated by the medium-frequency induction power supply 4 after reaching the bottom to keep the existing shape, at the moment, nitrogen is introduced into the cooling system 8, enters the air cooling inlet 17 and flows out from the air cooling outlet 18, and the seed crystal 13 can be partially melted but can not be fully melted. When a certain amount of silicon liquid is contained in the quartz crucible 14, the inflow of nitrogen gas is increased, and crystal growth is started. At this time, the lifting mechanism 6 lifts the medium frequency induction coil 5, the low frequency induction coil 10 and the shield ring 12 upwards, and the lifting speed can be 0.2 mm-15 mm/min. After the monocrystalline silicon is pulled to a certain length, the cooling system 8 is communicated with water, and at the moment, the opening of an external water outlet valve is ensured, so that the cooler 9 is prevented from being damaged by the generation of a large amount of water vapor. And then, gradually continuing to pull until the top of the shielding ring is flush with the bottom of the graphite melter 7, and finishing pulling.
If a more ideal single crystal silicon ingot is to be obtained, effective temperature control of the bottom single crystal silicon seed crystal 13 is required, and process parameters such as platinum-rhodium thermocouple and infrared temperature measurement and control means thereof, which are conventional industrial means in the art, are not described in detail herein.
Example 1
The vacuum pumping device 1 is provided with a combination of a Roots pump and a mechanical pump, the power of a medium-frequency induction power supply 4 is 50kw, the frequency is 2000Hz, the number of turns of a coil is 15 turns, the inner size of a quartz crucible 14 is 160.75mm x 160.75mm, the size of a seed crystal 13 is 158.75mm x 30mm, the power of a low-frequency induction power supply 11 is 10kw, the frequency is 4Hz, the number of turns of the coil is 2 turns, and 15kg of polycrystalline silicon raw materials are added in a cumulative mode. Vacuumizing, when the vacuum degree reaches 3Pa, starting the medium-frequency induction power supply 4, feeding when the infrared temperature measurement of the graphite melter 7 reaches about 1500 ℃, and introducing 0.1MPa nitrogen into the cooling system 8 after melting is started, wherein the flow rate is 0.3m3Min; after 1 hour passes through the bottom of the quartz crucible 14, the temperature zone is stable, the height of the molten pool is 50mm, and the seed crystal 13 is melted by 8 mm. And (3) turning on the low-frequency induction power supply 11 and simultaneously turning on the lifting mechanism 6 to drive the whole coil to move upwards at a constant speed of 0.8mm/min to start crystal pulling. After 2h crystal growth, the crystal length is about 100mm, the gas flow is increased, the pressure is increased to 0.3MPa, and the flow can reach 0.8m3And/min, pulling continuously. And after 1 hour, the cooling system 8 is cooled by water, the crystal is continuously pulled, and after 2.5 hours, the crystal growth is finished.
The temperature in the furnace is gradually reduced, and when the temperature of the pulled monocrystalline silicon is reduced to be below 100 ℃, the monocrystalline silicon ingot is taken out. After knocking off the quartz crucible 14, a single crystal silicon ingot having a size of 160.75mm 160.75mm 266mm and a weight of about 15kg was obtained.
Example 2
The vacuum pumping device 1 is still provided with a combination of a Roots pump and a mechanical pump, the power of the medium-frequency induction power supply 4 is 90kw, the frequency is 1000Hz, the number of turns of the coil is 10 turns, the internal size of the quartz crucible 14 is 168mm x 168mm, the size of the seed crystal 13 is 168mm x 168mm 25mm (with a large oblique angle), the power of the low-frequency induction power supply 11 is 10kw, the frequency is 4Hz, the number of turns of the coil is 2 turns, and 18kg of polycrystalline silicon raw material is added in an accumulated mode. Vacuumizing, starting a medium-frequency power supply when the vacuum degree reaches 3Pa, feeding when the infrared temperature of the graphite melter 7 reaches about 1500 ℃, and introducing 0.15MPa nitrogen into a cold area system after melting is started, wherein the flow rate is 0.4m3Min; after 1.5 hours, the temperature zone was stable, the bath height was 40mm, and the seed crystal 13 was melted by 10mm at the bottom of the quartz crucible 14. And (3) turning on the low-frequency induction power supply 11 and simultaneously turning on the lifting mechanism 6 to drive the whole coil to move upwards at a constant speed of 0.6mm/min to start crystal pulling. After 3h crystal growth, the crystal length exceeds 100mm, the gas flow is increased, the pressure is increased to 0.4MPa, and the flow can reach 0.9m3And/min, pulling continuously. And after 2h, the cooling system 8 is cooled by water, the crystal is continuously pulled, and after 3h, the crystal growth is finished.
The temperature in the furnace is gradually reduced, and when the temperature of the pulled monocrystalline silicon is reduced to be below 100 ℃, the monocrystalline silicon ingot is taken out. After knocking off the quartz crucible 14, a single crystal silicon ingot with dimensions of 168mm 285mm and a weight of about 18kg was obtained.
Other embodiments of the present application will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This application is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the application and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the application being indicated by the following claims.
It will be understood that the present application is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the application is limited only by the appended claims.
Claims (10)
1. A device for pulling monocrystalline silicon in a dual-frequency induction furnace is characterized by comprising:
a vacuum melting chamber;
the quartz crucible is arranged in the vacuum melting chamber;
the graphite melter is fixed at the upper part of the quartz crucible, and a liquid outlet for the melted silicon liquid to flow out is formed in the graphite melter;
the discharge port of the feeding mechanism is communicated with the graphite melter;
the intermediate frequency induction coil is sleeved outside the quartz crucible;
the low-frequency induction coil is sleeved outside the quartz crucible and is positioned below the medium-frequency induction coil;
the shielding ring is sleeved outside the quartz crucible and positioned between the medium-frequency induction coil and the low-frequency induction coil;
the lifting mechanism provides lifting motion for the medium-frequency induction coil, the low-frequency induction coil and the shielding ring; and
a cooler located at the bottom of the quartz crucible.
2. The apparatus of claim 1 wherein the quartz crucible is positioned at a bottom below the bottom of the shield ring.
3. The apparatus for pulling monocrystalline silicon in a dual-frequency induction furnace as claimed in claim 1, wherein the intermediate frequency induction coil is provided with a corresponding intermediate frequency induction power supply; the low-frequency induction coil is provided with a corresponding low-frequency induction power supply.
4. The device for pulling the monocrystalline silicon in the double-frequency induction furnace is characterized in that the induction frequency of the medium-frequency induction coil is 300Hz to 3000 Hz; the induction frequency of the low-frequency induction coil is 3 Hz-50 Hz.
5. The apparatus of claim 1, wherein the vacuum melting chamber has a feed opening aligned with the mouth end of the graphite melter.
6. The apparatus of claim 1 wherein the shield ring is water cooled by forced cooling.
7. The apparatus of claim 1 wherein a cooling system is coupled to the cooler.
8. The apparatus of claim 1, wherein the cooler is gas or water cooled.
9. The apparatus for pulling single crystal silicon in a dual frequency induction furnace as set forth in claim 1, wherein the cooling medium inlet of the cooler is located at a central position of the cooler.
10. The apparatus of claim 1 wherein the cooler has a low melting point and a high boiling point liquid metal.
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| CN202110907857.1A CN113668047A (en) | 2021-08-09 | 2021-08-09 | Device for pulling monocrystalline silicon in double-frequency induction furnace |
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| CN202110907857.1A CN113668047A (en) | 2021-08-09 | 2021-08-09 | Device for pulling monocrystalline silicon in double-frequency induction furnace |
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2021
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| JP2012017221A (en) * | 2010-07-08 | 2012-01-26 | Jx Nippon Mining & Metals Corp | Hybrid silicon wafer and method of producing the same |
| CN102021643A (en) * | 2010-09-21 | 2011-04-20 | 上海大学 | Method and device for directionally solidifying liquid-solid interface based on alternating magnetic field modulation |
| CN102094233A (en) * | 2010-12-28 | 2011-06-15 | 哈尔滨工业大学 | Device for preparing polycrystalline silicon ingots with directional solidification microstructures |
| CN102774839A (en) * | 2012-01-27 | 2012-11-14 | 金子恭二郎 | Silicon purification method |
| CN107964681A (en) * | 2017-12-17 | 2018-04-27 | 孟静 | The continuous growing method of silicon crystal |
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Application publication date: 20211119 |