CN113659556A - High-voltage-resistant protection circuit of chip and high-voltage-resistant chip - Google Patents
High-voltage-resistant protection circuit of chip and high-voltage-resistant chip Download PDFInfo
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
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Abstract
The invention discloses a high-voltage resistant protection circuit of a chip and a high-voltage resistant chip, wherein the high-voltage resistant protection circuit comprises: the input end of the voltage division circuit is electrically connected with a high-voltage power supply, the negative feedback circuit is used for converting the voltage output by the voltage division circuit into current and feeding the current back to the voltage division circuit so as to adjust the output voltage of the voltage division circuit, the current is increased along with the increase of the voltage of the high-voltage power supply, and the output end of the voltage division circuit is electrically connected with the power supply end of the chip so as to take the output voltage adjusted by the negative feedback circuit as the working voltage of the chip; according to the invention, when the chip is connected with high voltage, the connected high voltage can be regulated to be within the normal working voltage range of the chip, so that the chip designed by adopting a common voltage-resistant device can normally work under the high voltage condition without adopting a voltage-resistant high-voltage tube design; therefore, an additional MASK layer does not need to be added in the chip, and the design cost of the chip is reduced.
Description
Technical Field
The invention belongs to the technical field of chips, and particularly relates to a high-voltage-resistant protection circuit of a chip and a high-voltage-resistant chip.
Background
Chips, known as integrated circuits, microcircuits, microchips or chips, are a way in electronics to miniaturize circuits (including primarily semiconductor devices, also passive components, etc.) and are often fabricated on semiconductor wafer surfaces; a chip is essentially an integrated circuit, which is composed of a large number of transistors, and different chips have different integration scales, from hundreds of millions to hundreds of thousands of transistors, and perform different functions through signals generated by a plurality of transistors inside.
Common chips include a Central Processing Unit (CPU), a Graphics Processing Unit (GPU), a flash memory, a memory card, a microcontroller unit (MCU), a digital-to-analog conversion chip, an analog-to-digital conversion chip, a sensor chip, and the like, and are widely used in various electronic control and intelligent control fields, and have become one of indispensable devices in modern intelligent manufacturing.
At present, for a chip with high-voltage application requirements, a high-voltage tube with corresponding voltage resistance is required to be used for design, and if a common voltage-resistant device is adopted, the device can be directly punctured when high-voltage power is supplied, so that the chip is burnt; however, if the chip is designed by using a high voltage device, the MASK level of the chip is increased compared with the chip designed by using a common device, which directly results in an increase in cost; therefore, how to enable the chip to adopt the design of a common voltage-resistant device and to work normally under the condition of high voltage becomes a problem to be solved urgently.
Disclosure of Invention
The invention aims to provide a high-voltage resistant protection circuit of a chip and a high-voltage resistant chip, and aims to solve the problem of high cost of the existing chip adopting a high-voltage resistant device design.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention provides a high voltage resistant protection circuit of a chip, which comprises:
the input end of the voltage division circuit is electrically connected with a high-voltage power supply;
the negative feedback circuit is used for converting the voltage output by the voltage division circuit into current and feeding the current back to the voltage division circuit so as to adjust the output voltage of the voltage division circuit, and the current is increased along with the increase of the voltage of the high-voltage power supply;
the output end of the voltage division circuit is electrically connected with the power supply end of the chip so as to use the output voltage regulated by the negative feedback circuit as the working voltage of the chip.
Based on the disclosure, the voltage division circuit is arranged on the power supply end of the chip, so that the voltage division processing is carried out on the connected high-voltage power supply, and the voltage input by the high-voltage power supply is reduced to be within the working voltage range of the chip; meanwhile, the invention is also provided with a negative feedback circuit which can convert the voltage output by the voltage division circuit into current and feed the current back to the voltage division circuit; therefore, the current can change along with the voltage change of the high-voltage power supply (namely, the high-voltage power supply becomes larger, the current becomes larger, the high-voltage power supply becomes smaller, and the current becomes smaller), so that the voltage division capability of the voltage division circuit is enhanced, the voltage output by the voltage division circuit is more stable, and the chip works normally.
Through the design, when the chip is connected with high voltage, the connected high voltage can be adjusted to be within the normal working voltage range of the chip, so that the chip designed by adopting a common voltage-resistant device can normally work under the high-voltage condition without adopting a voltage-resistant high-voltage tube design; therefore, an additional MASK layer does not need to be added in the chip, and the design cost of the chip is reduced.
In one possible design, the voltage divider circuit employs a resistive voltage divider network.
Based on the above disclosure, the present invention adopts a resistance voltage dividing network as a voltage dividing circuit, which substantially comprises: the resistor string is used for realizing voltage division, so that the voltage output by the high-voltage power supply is adjusted to be within the voltage range of normal work of the chip, and the common chip can also work normally in a high-voltage environment.
In one possible design, the resistive voltage divider network includes: the first resistor, the second resistor and the third resistor are sequentially connected in series;
the input end of the first resistor is electrically connected with the high-voltage power supply, the output end of the third resistor is grounded, and the common connection end of the first resistor and the second resistor is used as the output end of the resistor voltage division network and is electrically connected with the power supply end of the chip;
the sampling end of the negative feedback circuit is electrically connected with the common end of the second resistor and the third resistor, and the output end of the negative feedback circuit is electrically connected with the common end of the second resistor and the first resistor so as to adjust the output voltage of the resistor voltage dividing network.
Based on the disclosure, the invention discloses a specific circuit structure of a resistance voltage division network, namely, 3 resistors connected in series are used for dividing voltage of a high-voltage power supply (namely, a power supply of a chip); the negative feedback circuit is connected to the common end of the third resistor and the second resistor, so that voltage sampling is realized, sampled voltage is converted into current, the current is adjusted through the negative feedback circuit, the current is fed back to the resistor voltage division network, and the voltage of the first resistor is further improved or reduced, so that the voltage division capability of the resistor voltage division network is further improved.
In one possible design, the negative feedback circuit includes: the first field effect transistor, the second field effect transistor, the third field effect transistor, the fourth resistor and the fifth resistor;
the grid electrode of the first field effect transistor is used as the sampling end and is electrically connected with the common connection end of the third resistor and the second resistor;
the drain electrode of the first field effect transistor is electrically connected with one end of the fourth resistor and the grid electrode of the third field effect transistor respectively;
a source electrode of the third field effect transistor is electrically connected with one end of the fifth resistor and a grid electrode of the second field effect transistor respectively;
the drain electrode of the second field effect transistor, the drain electrode of the third field effect transistor and the other end of the fourth resistor are electrically connected with the common end of the second resistor and the first resistor;
and the source electrode of the first field effect transistor, the source electrode of the second field effect transistor and the other end of the fifth resistor are respectively grounded.
Based on the disclosure, the invention discloses a specific circuit structure of a negative feedback circuit, namely, a common connection end of a third resistor and a second resistor is a voltage division end and is also used as a sampling point, a grid electrode of a first field effect tube is used as a sampling end, when the voltage of a high-voltage power supply is increased, the voltage of the common connection end of the third resistor and the second resistor is correspondingly increased, at the moment, the negative feedback circuit converts the voltage into a larger current and feeds the larger current back to the voltage division circuit through the second field effect tube, so that the voltage flowing through the first resistor is increased, and the voltage division capability of the voltage division circuit is further improved; therefore, due to the existence of the negative feedback circuit, the current of the voltage division circuit is increased along with the increase of the high-voltage power supply or reduced along with the reduction of the high-voltage power supply, so that the output voltage of the voltage division circuit is kept in a determined range, and the normal work of a chip under a high-voltage condition is ensured.
In one possible design, the first field effect transistor and the second field effect transistor are N-type field effect transistors, and the third field effect transistor is a P-type field effect transistor.
In one possible design, the output voltage is between 3.3V and 5.12V.
Based on the disclosure, the output voltage is kept between 3.3V and 5.12V, so that the working voltage of most chips can be met, and the method is convenient to popularize and apply.
In one possible design, the output voltage is 5V.
In a second aspect, the present invention provides a high voltage tolerant chip, including: the high-voltage resistant protection circuit comprises an MCU chip and the chip which can be designed in the first aspect or any one of the first aspects;
the power supply end of the MCU chip is electrically connected with a high-voltage power supply through a voltage division circuit, and the voltage division circuit is also electrically connected with a negative feedback circuit, wherein the voltage output by the high-voltage power supply is divided by the voltage division circuit, and the voltage is adjusted by the negative feedback circuit and then is used as the working voltage of the MCU chip.
Based on the disclosure, each chip is provided with a high-voltage resistant protection circuit, so that the voltage division function of the access high voltage can be realized, the high voltage is reduced to the normal working voltage range of the chip, and the chip designed by the common voltage resistant device can normally work under the high-voltage condition without adopting a voltage resistant high-voltage tube design.
The beneficial effects obtained by the invention are as follows:
(1) according to the invention, when the chip is connected with high voltage, the connected high voltage can be regulated to be within the normal working voltage range of the chip, so that the chip designed by adopting a common voltage-resistant device can normally work under the high voltage condition without adopting a voltage-resistant high-voltage tube design; therefore, an additional MASK layer does not need to be added in the chip, and the design cost of the chip is reduced.
(2) The invention is also provided with the negative feedback circuit which can convert the voltage output by the voltage division circuit into current, and the converted current is increased along with the increase of the voltage of the high-voltage power supply or reduced along with the decrease of the voltage of the high-voltage power supply, thereby improving the voltage division capability of the voltage division circuit, further reducing the output voltage and ensuring the normal work of the chip.
Drawings
Fig. 1 is a specific circuit diagram of a high voltage protection circuit of a chip according to the present invention.
Detailed Description
The invention is further described with reference to the following figures and specific embodiments. It should be noted that the description of the embodiments is provided to help understanding of the present invention, but the present invention is not limited thereto. Specific structural and functional details disclosed herein are merely illustrative of example embodiments of the invention. This invention may, however, be embodied in many alternate forms and should not be construed as limited to the embodiments set forth herein.
It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of example embodiments of the present invention.
It should be understood that, for the term "and/or" as may appear herein, it is merely an associative relationship that describes an associated object, meaning that three relationships may exist, e.g., a and/or B may mean: a exists alone, B exists alone, and A and B exist at the same time; for the term "/and" as may appear herein, which describes another associative object relationship, it means that two relationships may exist, e.g., a/and B, may mean: a exists independently, and A and B exist independently; in addition, for the character "/" that may appear herein, it generally means that the former and latter associated objects are in an "or" relationship.
Examples
In the high voltage resistant protection circuit of the chip provided by the first aspect of the embodiment, a voltage division circuit is arranged at a power supply end of the chip, so that voltage division processing is performed on an accessed high voltage; meanwhile, the voltage output by the voltage division circuit is converted into current by adopting a negative feedback circuit and is fed back to the voltage division circuit, and the total current of the voltage division circuit can be improved or reduced by the design, so that the voltage division capability of the voltage division circuit is improved, and the output voltage of the voltage division circuit is kept within the normal working voltage range of the chip; therefore, the chip designed by the common voltage-resistant device can normally work under a high-voltage condition only by selecting a proper resistance value, and the chip is not required to be designed by a voltage-resistant high-voltage tube, so that the design cost of the chip is reduced.
As shown in fig. 1, the high voltage tolerant protection circuit of the chip provided in the first aspect of this embodiment may include, but is not limited to: the input end of the voltage division circuit is electrically connected with a high-voltage power supply; namely, the high-voltage power supply is used as the power supply of the chip, and the voltage division circuit performs voltage division processing on the voltage output by the power supply, so that an ideal working voltage is provided for the chip, and the normal work of the chip under the high-voltage condition is ensured.
In addition, in order to improve the voltage dividing capability of the voltage dividing circuit, in the present embodiment, a negative feedback circuit is further provided, and the connection structure with the voltage dividing circuit is as follows:
referring to fig. 1, the negative feedback circuit is configured to convert a voltage output by the voltage dividing circuit into a current, and feed the current back to the voltage dividing circuit to adjust an output voltage of the voltage dividing circuit; the current converted by the negative feedback circuit changes along with the voltage change of the high-voltage power supply, namely the voltage is increased, the current is increased along with the current, the voltage of a device in the voltage division circuit is increased along with the current, and therefore the voltage output to the power supply end of the chip is reduced along with the voltage, and vice versa; therefore, the function of adjusting the output voltage of the voltage division circuit can be achieved.
The output voltage adjusted by the negative feedback circuit is used as the working voltage of the chip, namely, the output end of the voltage division circuit is electrically connected with the power supply end of the chip, so that the chip can still obtain normal working voltage under the high-voltage condition, and the normal chip can also work normally under the high-voltage condition.
Referring to fig. 1, a specific embodiment of the aforementioned high voltage tolerant protection circuit is given as follows:
that is, in the present embodiment, the exemplary voltage divider circuit employs a resistor voltage divider network; the essence is as follows: the resistor string realizes voltage division, so that the voltage output by the high-voltage power supply is adjusted to be within the voltage range of normal work of the chip, and the common chip can normally work under the high-voltage environment.
Referring to fig. 1, a specific structure of one of the resistive voltage divider network and the negative feedback circuit is given as follows:
in this embodiment, examples of the resistive voltage divider network may include, but are not limited to: a first resistor R1, a second resistor R2 and a third resistor R3 which are connected in series in sequence; the negative feedback circuit may include, but is not limited to: the circuit comprises a first field effect transistor N1, a second field effect transistor N2, a third field effect transistor P1, a fourth resistor R4 and a fifth resistor R5.
Referring to fig. 1, the connection relationship of the electronic devices is as follows:
the input end of the first resistor R1 is electrically connected to the high voltage power supply (i.e., VDDH in fig. 1), the output end of the third resistor R3 is grounded, and the common end of the first resistor R1 and the second resistor R2 serves as the output end of the resistor voltage dividing network and is electrically connected to the power supply end (i.e., VDD end in fig. 1) of the chip.
Meanwhile, the gate of the first field effect transistor N1 is used as the sampling terminal of the negative feedback circuit, and is electrically connected to the common connection terminal of the third resistor R3 and the second resistor R2, so as to realize the sampling of the voltage.
The drain of the first fet N1 is electrically connected to one end of the fourth resistor R4 and the gate of the third fet P1, respectively; similarly, referring to fig. 1, the source of the third fet P1 is electrically connected to one end of the fifth resistor R5 and the gate of the second fet N2, respectively; the drain electrode of the second field effect transistor N2, the drain electrode of the third field effect transistor P1 and the other end of the fourth resistor R4 are electrically connected with the common end of the second resistor R2 and the first resistor R1; the source of the first fet N1, the source of the second fet N2, and the other end of the fifth resistor R5 are respectively grounded.
Therefore, the voltage sampled by the sampling end can be converted into current through the negative feedback circuit, and the current is fed back to the first resistor R1 through the second field effect transistor N2 after being regulated according to the voltage of the high-voltage power supply, so that the voltage value of the first resistor R1 is increased or reduced, and the purpose of regulating the output voltage of the resistor voltage division network is achieved.
In this embodiment, for example, the first fet N1 and the second fet N2 may be but are not limited to N-type fets, and the third fet P1 may be but is not limited to P-type fets.
Referring to fig. 1, the voltage dividing circuit and the negative feedback circuit are analyzed to illustrate the voltage dividing function as follows:
as can be seen from fig. 1, the operating voltage of the chip, i.e., VDD, is related to the voltage of the first resistor R1, and therefore, an expression of the operating voltage of the chip can be obtained:
VDD＝VDDH-(I*r1)
in the above equation, VDDH represents the voltage of the high-voltage power supply, and R1 represents the resistance of the first resistor R1.
Therefore, as can be seen from the expression of VDD described above, the voltage thereof is related to the voltage of the high-voltage power supply and the current value of the first resistor R1; therefore, in order to keep the working voltage of the chip within a normal range under different high-voltage conditions, it is necessary to ensure that the current of the first resistor R1 increases with the increase of the high-voltage power supply or decreases with the decrease of the high-voltage power supply; the adjustment of the current value of the first resistor R1 can be realized by a negative feedback circuit, as follows:
taking the common terminal of the second resistor R2 and the third resistor R3 as an example, that is, the common terminal of the third resistor R3 and the second resistor R2 (i.e., point a in fig. 1) is used as a voltage divider, the voltage at point a is:
in the above formula, R1, R2, R3, R4 and R5 respectively have resistance values of the first resistor R1, the second resistor R2, the third resistor R3, the fourth resistor R4 and the fifth resistor R5, and VAVoltage at point A, rN1、rN2And rP1Respectively, the resistance values of the first fet N1, the second fet N2, and the third fet P1 are shown.
When the voltage of the high voltage power supply is increased, the voltage at the point a is also correspondingly increased, and at this time, the negative feedback circuit formed by the first fet N1, the second fet N2, the third fet P1, the fourth resistor R4, and the fifth resistor R5 converts the voltage at the point a into a larger current, and outputs the larger current to the first resistor R1 through the second fet N2.
Therefore, when the voltage of the high-voltage power supply is increased, the current value of the first resistor R1 is also increased due to the existence of the negative feedback circuit, so that the working voltage VDD of the chip can be kept within the normal working voltage range by selecting a proper resistor and device value according to different VDDH voltages, thereby adapting to the corresponding high-voltage condition.
In this embodiment, for example, the output voltage adjusted by the voltage divider circuit and the negative feedback circuit may be, but is not limited to, between 3.3V and 5.12V; of course, 5V is preferred; through the design, the chip packaging structure can be suitable for most chips, improves the use applicability and is convenient to popularize and apply; meanwhile, the corresponding chip can be designed by using a 5V process by adopting a 5V working voltage, so that the mask level is reduced, and the chip cost is greatly reduced.
Therefore, through the high-voltage resistant protection circuit of the chip elaborated in detail, when the chip is connected with high voltage, the connected high voltage can be adjusted to be within the normal working voltage range of the chip, so that the chip designed by adopting a common voltage resistant device can normally work under the high-voltage condition without adopting a voltage resistant high-voltage tube design; therefore, an additional MASK layer does not need to be added in the chip, and the design cost of the chip is reduced.
The second aspect of the present embodiment provides a high voltage resistant chip, which includes an MCU chip and the high voltage resistant protection circuit of the chip of the first aspect of the present embodiment.
Namely, the power supply end of the MCU chip is electrically connected with a high-voltage power supply through a voltage division circuit, and the voltage division circuit is also electrically connected with a negative feedback circuit, wherein the voltage output by the high-voltage power supply is divided by the voltage division circuit, and the voltage is adjusted by the negative feedback circuit and then is used as the working voltage of the MCU chip.
Therefore, the high-voltage-resistant protection circuit is configured for each chip, the voltage division function of the access high voltage can be realized, so that the high voltage is reduced to the normal working voltage range of the chip, the chip designed by the common voltage-resistant device can normally work under the high-voltage condition, and the chip is not required to be designed by a voltage-resistant high-voltage tube.
The voltage dividing principle of the high voltage tolerant chip provided by the second aspect of this embodiment is the same as that of the first aspect, and thus, the description thereof is omitted.
Finally, it should be noted that: the above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (8)
1. A high voltage resistant protection circuit of a chip, comprising:
the input end of the voltage division circuit is electrically connected with a high-voltage power supply;
the negative feedback circuit is used for converting the voltage output by the voltage division circuit into current and feeding the current back to the voltage division circuit so as to adjust the output voltage of the voltage division circuit, and the current is increased along with the increase of the voltage of the high-voltage power supply;
the output end of the voltage division circuit is electrically connected with the power supply end of the chip so as to use the output voltage regulated by the negative feedback circuit as the working voltage of the chip.
2. The chip high voltage protection circuit as claimed in claim 1, wherein said voltage divider circuit employs a resistive voltage divider network.
3. The chip high voltage tolerant protection circuit of claim 2, wherein the resistor voltage divider network comprises: a first resistor (R1), a second resistor (R2), and a third resistor (R3) connected in series in this order;
the input end of the first resistor (R1) is electrically connected with the high-voltage power supply, the output end of the third resistor (R3) is grounded, and the common connection end of the first resistor (R1) and the second resistor (R2) is used as the output end of the resistor voltage division network and is electrically connected with the power supply end of the chip;
the sampling end of the negative feedback circuit is electrically connected with the common connection end of the second resistor (R2) and the third resistor (R3), and the output end of the negative feedback circuit is electrically connected with the common connection end of the second resistor (R2) and the first resistor (R1) so as to adjust the output voltage of the resistor voltage division network.
4. The chip of claim 3, wherein the negative feedback circuit comprises: a first field effect transistor (N1), a second field effect transistor (N2), a third field effect transistor (P1), a fourth resistor (R4) and a fifth resistor (R5);
the grid of the first field effect transistor (N1) is used as the sampling end and is electrically connected with the common connection end of the third resistor (R3) and the second resistor (R2);
the drain electrode of the first field effect transistor (N1) is electrically connected with one end of the fourth resistor (R4) and the gate electrode of the third field effect transistor (P1) respectively;
the source electrode of the third field effect transistor (P1) is electrically connected with one end of the fifth resistor (R5) and the grid electrode of the second field effect transistor (N2) respectively;
the drain electrode of the second field effect transistor (N2), the drain electrode of the third field effect transistor (P1) and the other end of the fourth resistor (R4) are electrically connected with the common connection end of the second resistor (R2) and the first resistor (R1);
the source electrode of the first field effect transistor (N1), the source electrode of the second field effect transistor (N2) and the other end of the fifth resistor (R5) are respectively grounded.
5. The protection circuit of claim 4, wherein said first FET (N1) and said second FET (N2) are N FETs, and said third FET (P1) is P FET.
6. The chip high voltage protection circuit of claim 1, wherein the output voltage is between 3.3V and 5.12V.
7. The chip high voltage protection circuit of claim 6, wherein the output voltage is 5V.
8. A high voltage resistant chip is characterized by comprising an MCU chip and a high voltage resistant protection circuit of the chip of any one of claims 1 to 7;
the power supply end of the MCU chip is electrically connected with a high-voltage power supply through a voltage division circuit, and the voltage division circuit is also electrically connected with a negative feedback circuit, wherein the voltage output by the high-voltage power supply is divided by the voltage division circuit, and the voltage is adjusted by the negative feedback circuit and then is used as the working voltage of the MCU chip.
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| CN202111050485.1A CN113659556A (en) | 2021-09-08 | 2021-09-08 | High-voltage-resistant protection circuit of chip and high-voltage-resistant chip |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105811750A (en) * | 2016-04-25 | 2016-07-27 | 优利德科技(中国)有限公司 | Lightning-stroke protection voltage-stabilizing power supply with ultra-wide voltage input function, and current-limiting and voltage-stabilizing method therefor |
| CN107968555A (en) * | 2017-12-07 | 2018-04-27 | 深圳市崧盛电子股份有限公司 | A kind of voltage holding circuit and on-off circuit for high input voltage |
| CN110677055A (en) * | 2019-11-20 | 2020-01-10 | 深圳市富满电子集团股份有限公司 | High-voltage power supply method, circuit, chip and system |
| CN210323931U (en) * | 2019-07-22 | 2020-04-14 | 上海芯旺微电子技术有限公司 | Wide-voltage input capacitor-free LDO circuit for MCU |
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2021
- 2021-09-08 CN CN202111050485.1A patent/CN113659556A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105811750A (en) * | 2016-04-25 | 2016-07-27 | 优利德科技(中国)有限公司 | Lightning-stroke protection voltage-stabilizing power supply with ultra-wide voltage input function, and current-limiting and voltage-stabilizing method therefor |
| CN107968555A (en) * | 2017-12-07 | 2018-04-27 | 深圳市崧盛电子股份有限公司 | A kind of voltage holding circuit and on-off circuit for high input voltage |
| CN210323931U (en) * | 2019-07-22 | 2020-04-14 | 上海芯旺微电子技术有限公司 | Wide-voltage input capacitor-free LDO circuit for MCU |
| CN110677055A (en) * | 2019-11-20 | 2020-01-10 | 深圳市富满电子集团股份有限公司 | High-voltage power supply method, circuit, chip and system |
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Application publication date: 20211116 |