CN113659436B - Filtering polaroid and vertical cavity surface emitting laser - Google Patents

Filtering polaroid and vertical cavity surface emitting laser Download PDF

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CN113659436B
CN113659436B CN202110924891.XA CN202110924891A CN113659436B CN 113659436 B CN113659436 B CN 113659436B CN 202110924891 A CN202110924891 A CN 202110924891A CN 113659436 B CN113659436 B CN 113659436B
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distributed bragg
bragg reflector
filter
filtering
dielectric layer
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CN113659436A (en
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常瑞华
沈志强
秦昊烨
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Zhejiang Bosheng Photoelectric Technology Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18363—Structure of the reflectors, e.g. hybrid mirrors comprising air layers
    • H01S5/18366—Membrane DBR, i.e. a movable DBR on top of the VCSEL
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1814—Diffraction gratings structurally combined with one or more further optical elements, e.g. lenses, mirrors, prisms or other diffraction gratings
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5036—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-selective
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5045—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement having a frequency filtering function

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Polarising Elements (AREA)

Abstract

The disclosure provides a filtering polarizer and a vertical cavity surface emitting laser, wherein the filtering polarizer comprises a high-contrast grating, a filtering cavity and a distributed Bragg reflector which are sequentially stacked from top to bottom. The high-contrast grating is integrated on the basis of the filtering cavity and the distributed Bragg reflector, so that the narrow-band filtering of incident light in a specific wavelength range and the generation of linearly polarized light can be realized by utilizing the polarization selectivity of the high-contrast grating and the reflection effect of the distributed Bragg reflector.

Description

Filtering polaroid and vertical cavity surface emitting laser
Technical Field
The present disclosure relates generally to the field of optical device technology, and more particularly to a filtering polarizer and a vertical cavity surface emitting laser.
Background
The narrow-band filter with polarization selectivity plays an important role in applications such as vertical cavity surface emitting lasers (Vertical Cavity Surface Emitting Laser, VCSELs), polarization imaging, generation and filtering of narrow-band polarized light, and the like.
However, conventional optical filters and polarizers are bulky, which is disadvantageous for on-chip integration and miniaturization, and have limitations.
Disclosure of Invention
In view of the above-described drawbacks or shortcomings of the related art, it is desirable to provide a filtering polarizer and a vertical cavity surface emitting laser capable of having filtering and polarizing functions while facilitating integration.
In a first aspect, the present disclosure provides a filter polarizer comprising a high contrast grating, a filter cavity, and a distributed bragg mirror arranged in a stack in order from top to bottom.
Optionally, in some embodiments of the disclosure, the filter cavity includes a distributed bragg reflector-based filter cavity top mirror, a bandpass filter cavity, and a distributed bragg reflector-based filter cavity bottom mirror.
Optionally, in some embodiments of the disclosure, the thickness of the band-pass filter cavity is
Figure BDA0003208809530000011
Wherein lambda is 1 Representing a first target wavelength.
Optionally, in some embodiments of the disclosure, the distributed bragg mirror includes first dielectric layers and second dielectric layers alternately disposed, the first dielectric layers having a refractive index different from a refractive index of the second dielectric layers.
Optionally, in some embodiments of the present disclosure, a material of the first dielectric layer and a material of the second dielectric layer are at least one of silicon dioxide, aluminum oxide, titanium oxide, and silicon nitride.
Optionally, in some embodiments of the present disclosure, the thickness of the first dielectric layer and the thickness of the second dielectric layer are both
Figure BDA0003208809530000021
Wherein lambda is 2 Representing a second target wavelength.
Optionally, in some embodiments of the present disclosure, the material of the high contrast grating includes any one of silicon nitride, silicon, and titanium dioxide.
Optionally, in some embodiments of the present disclosure, the high contrast grating has a thickness of 150nm to 900nm.
Optionally, in some embodiments of the present disclosure, the filter polarizer further includes a substrate disposed at a bottom of the distributed bragg reflector.
In a second aspect, the present disclosure provides a vcsels comprising a filtered polarizer according to any one of the first aspects.
From the above technical solutions, the embodiments of the present disclosure have the following advantages:
the embodiment of the disclosure provides a filtering polaroid and a vertical cavity surface emitting laser, which can realize narrow-band filtering of incident light in a specific wavelength range and generate linearly polarized light by simultaneously utilizing the polarization selectivity of a high-contrast grating and the reflection effect of a distributed Bragg reflector by integrating the high-contrast grating on the basis of a filtering cavity and the distributed Bragg reflector.
Drawings
Other features, objects and advantages of the present disclosure will become more apparent upon reading of the detailed description of non-limiting embodiments, made with reference to the following drawings:
fig. 1 is a schematic structural diagram of a filter polarizer according to an embodiment of the present disclosure;
FIG. 2 is a schematic diagram of a transmittance spectrum of a high contrast grating according to an embodiment of the present disclosure;
fig. 3 is a schematic structural diagram of a distributed bragg reflector according to an embodiment of the present disclosure;
FIG. 4 is a schematic view of a transmittance spectrum of a filter polarizer according to an embodiment of the present disclosure;
fig. 5 is an enlarged schematic view of fig. 4 around 940nm.
Reference numerals:
100-filtering polaroid, 101-high contrast grating, 102-filtering cavity, 1021-filtering cavity top mirror, 1022-band-pass filtering cavity, 1023-filtering cavity bottom mirror, 103-distributed Bragg reflector, 1031-first dielectric layer, 1032-second dielectric layer, 104-substrate.
Detailed Description
In order that those skilled in the art will better understand the present disclosure, a technical solution in the embodiments of the present disclosure will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present disclosure, not all embodiments. Based on the embodiments in this disclosure, all other embodiments that a person of ordinary skill in the art would obtain without making any inventive effort are within the scope of protection of this disclosure.
The terms "first," "second," "third," "fourth" and the like in the description and in the claims and in the above-described figures, if any, are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the described embodiments of the disclosure may be capable of operation in sequences other than those illustrated or described herein.
Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or modules is not necessarily limited to those steps or modules that are expressly listed or inherent to such process, method, article, or apparatus.
For ease of understanding and explanation, the filtering polarizer and the vertical cavity surface emitting laser provided by the embodiments of the present disclosure are described in detail below with reference to fig. 1 to 5.
Please refer to fig. 1, which is a schematic diagram of a structure of a filter polarizer according to an embodiment of the disclosure. The filter polarizer 100 includes a high contrast grating (High Contrast Grating, HCG) 101, a filter cavity 102, and a distributed bragg reflector (Distributed Bragg Reflector, DBR) 103, which are stacked in this order from top to bottom.
It should be noted that the high-contrast grating 101 is a single-layer near-wavelength grating physical structure, in which the refractive index of the grating material and the surrounding environment are very contrasted. The high contrast grating 101 can act differently from TE polarized light and TM polarized light to cause different transmittance, thereby generating linearly polarized light. And the distributed bragg reflector 103 is a structure in which a plurality of layers of materials with different refractive indexes are alternately formed, wherein each layer boundary causes reflection of a part of light waves. The distributed bragg mirror 103 may act as an optical filter and the reflected wavelength range is referred to as the photon stop band, i.e. the wavelength range in which light is inhibited from propagating in the structure. By integrating the high contrast grating 101 on the basis of the filter cavity 102 and the distributed Bragg reflector 103, the obtained filter polarizer 100 can have the functions of narrow-band filtering and linearly polarized light generation at the same time.
The embodiments of the present disclosure are illustrated below with one high contrast grating 101, one filter cavity 102, and three distributed Bragg reflectors 103, operating at 940nm. Of course, the number of the structures and the operating wavelength may be other values, which are not limited in this embodiment of the disclosure.
Alternatively, the material of the high contrast grating 101 in embodiments of the present disclosure may include, but is not limited to, any of silicon nitride, silicon, and titanium dioxide. The thickness of the high contrast grating 101 may be 150nm to 900nm, the duty cycle may be 0.2 to 0.8, and the period may be 0.9 to 1.5 times the operating wavelength. As shown in fig. 2, which is a schematic diagram of transmittance spectrum of a high-contrast grating provided by an embodiment of the present disclosure, it can be seen from fig. 2 that the high-contrast grating 101 has different transmittance in TE and TM polarization directions, and has a function of a linear polarizer, and an extinction ratio is very large at 940nm.
Optionally, in the embodiment of the present disclosure, the filter cavity 102 may include a filter cavity top mirror 1021 based on a distributed bragg reflector, a band-pass filter cavity 1022, and a filter cavity bottom mirror 1023 based on a distributed bragg reflector, where the filter cavity top mirror 1021, the band-pass filter cavity 1022, and the filter cavity bottom mirror 1023 together form a fabry-perot resonator structure for spectrally generating a narrowband peak near 940nm. Wherein the thickness of the band-pass filter cavity 1022 is
Figure BDA0003208809530000041
λ 1 Representing a first target wavelength, such as 940nm.
Alternatively, as shown in fig. 3, the distributed bragg reflector 103 in the embodiment of the present disclosure may include first dielectric layers 1031 and second dielectric layers 1032 alternately disposed, and the refractive index of the first dielectric layers 1031 is different from the refractive index of the second dielectric layers 1032. For example, the filter cavity top mirror 1021 and the filter cavity bottom mirror 1023 each have three pairs of high-index-low-index dielectric layers, and the distributed Bragg mirror 103 has ten pairs of high-index-low-index dielectric layers. The material of the first dielectric layer 1031 and the material of the second dielectric layer 1032 may be at least one of silicon dioxide, aluminum oxide, titanium oxide and silicon nitride. And the thickness of the first dielectric layer 1031 and the thickness of the second dielectric layer 1032 are both
Figure BDA0003208809530000042
λ 2 Representing the second target wavelengths, such as 555nm, 340nm and 200nm, respectively, for the top-down DBR mirror 103, as shown in FIG. 4, can be used to block transmitted light in the 200 nm-900 nm range, yielding an efficient passband in only a narrow band around 940nm. Further, as shown in FIG. 5, which is an enlarged view of FIG. 4 around 940nm, it can be seen that the TM polarized light has a very high transmittance, while the TE polarized light is almost totally reflected, i.e., the transmittance is close to 0.
Optionally, the filter polarizer 100 in the embodiments of the present disclosure may further include a substrate 104 disposed at the bottom of the distributed bragg reflector 103. For example, the substrate 104 may be silicon dioxide.
Based on the foregoing embodiments, the disclosed embodiments provide a VCSEL that may include filter polarizer 100 of the corresponding embodiments of FIGS. 1-5.
The embodiment of the disclosure provides a filter polaroid and a vertical cavity surface emitting laser, wherein the filter polaroid comprises a high-contrast grating, a filter cavity and a distributed Bragg reflector which are sequentially stacked from top to bottom. According to the embodiment of the disclosure, the high-contrast grating is integrated on the basis of the filtering cavity and the distributed Bragg reflector, so that the narrow-band filtering of incident light in a specific wavelength range and the generation of linearly polarized light can be realized by simultaneously utilizing the polarization selectivity of the high-contrast grating and the reflection effect of the distributed Bragg reflector.
The above embodiments are merely for illustrating the technical solution of the present disclosure, and are not limiting thereof; although the present disclosure has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present disclosure.

Claims (7)

1. The filter polaroid is characterized by comprising a high-contrast grating, a filter cavity and a distributed Bragg reflector which are sequentially stacked from top to bottom;
the filtering cavity comprises a filtering cavity top mirror based on a distributed Bragg reflector, a band-pass filtering cavity and a filtering cavity bottom mirror based on the distributed Bragg reflector, wherein the thickness of the band-pass filtering cavity is as follows
Figure FDA0004114419350000011
Wherein lambda is 1 Representing a first target wavelength, the first target wavelength being 940nm; the thickness of the high-contrast grating is 150-900 nm, the duty ratio is 0.2-0.8, and the period is 0.9-1.5 times of the first target wavelength.
2. The filter polarizer of claim 1 wherein the distributed bragg reflector comprises alternating first and second dielectric layers, the first dielectric layer having a refractive index different from the refractive index of the second dielectric layer.
3. The filter polarizer of claim 2 wherein the material of the first dielectric layer and the material of the second dielectric layer is at least one of silicon dioxide, aluminum oxide, titanium oxide, and silicon nitride.
4. The filter polarizer of claim 3 wherein the thickness of the first dielectric layer and the thickness of the second dielectric layer are both
Figure FDA0004114419350000012
Wherein lambda is 2 Representing a second target wavelength.
5. The filter polarizer of claim 1 wherein the high contrast grating material comprises any one of silicon nitride, silicon and titanium dioxide.
6. The filter polarizer of claim 1 further comprising a substrate disposed at the bottom of the distributed bragg reflector.
7. A vcl laser, characterized in that the vcl laser comprises a filter polarizer according to any of claims 1 to 6.
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GB9916145D0 (en) * 1999-07-10 1999-09-08 Secr Defence Control of polarisation of vertical cavity surface emitting lasers
CN105977786A (en) * 2016-06-29 2016-09-28 北京工业大学 Low refractive index medium support-type high-contrast grating surface emitting laser
CN106654858B (en) * 2017-03-08 2021-03-19 长春理工大学 Vertical cavity surface emitting semiconductor laser with double-layer sub-wavelength grating reflector
CN107768979B (en) * 2017-10-17 2019-07-12 北京工业大学 Extension integrates high contrast grating external cavity emitting laser
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