CN113659342A

CN113659342A - Phase shifter and antenna

Info

Publication number: CN113659342A
Application number: CN202110921097.XA
Authority: CN
Inventors: 雷登明; 席克瑞; 贾振宇; 章凯迪; 龚顺; 王明煜; 朱清三; 韩笑男; 白云飞; 王逸; 秦锋
Original assignee: Shanghai Tianma Microelectronics Co Ltd
Current assignee: Shanghai Tianma Microelectronics Co Ltd
Priority date: 2021-08-11
Filing date: 2021-08-11
Publication date: 2021-11-16
Anticipated expiration: 2041-08-11

Abstract

The invention discloses a phase shifter and an antenna. The phase shifter comprises a first substrate and a second substrate which are oppositely arranged; at least one phase shifting unit, the phase shifting unit includes microstrip line, liquid crystal layer and grounding metal layer; the microstrip line is positioned on one side of the first substrate close to the second substrate, the grounding metal layer is positioned on one side of the second substrate close to the first substrate, and the liquid crystal layer is positioned between the first substrate and the second substrate; the phase shifter further includes a heating structure between the first substrate and the second substrate. According to the phase shifter and the antenna provided by the embodiment of the invention, the heating structure is arranged between the first substrate and the second substrate, so that the liquid crystal layer is heated when the phase shifter is in a low-temperature environment, the temperature of liquid crystal molecules in the liquid crystal layer is increased, the liquid crystal molecules in the liquid crystal layer work in a normal temperature range, the liquid crystal layer is prevented from being influenced by an external low-temperature environment, and the problems that the phase shifter is slow in response and even cannot work normally in the low-temperature environment are solved.

Description

Phase shifter and antenna

Technical Field

The embodiment of the invention relates to the technical field of communication, in particular to a phase shifter and an antenna.

Background

The liquid crystal antenna controls the arrangement of liquid crystal molecules by using an electric signal based on the characteristic of liquid crystal molecule anisotropy, so that the dielectric parameters of each phase shifter unit are changed, the phase of a radio-frequency signal in each phase shifter unit is controlled, and finally the radiation beam direction of the antenna is controlled.

However, when the liquid crystal antenna is applied in a low temperature environment, the state of the liquid crystal is affected by the low temperature, which results in a long response time for the liquid crystal molecule to deflect, and even results in the liquid crystal antenna not working normally.

Disclosure of Invention

The invention provides a phase shifter and an antenna, which are used for improving the performance of the phase shifter and the antenna in a low-temperature environment.

In a first aspect, an embodiment of the present invention provides a phase shifter, including:

the first substrate and the second substrate are oppositely arranged;

at least one phase shifting unit, the phase shifting unit comprises a microstrip line, a liquid crystal layer and a grounding metal layer;

the microstrip line is positioned on one side of the first substrate close to the second substrate, the grounding metal layer is positioned on one side of the second substrate close to the first substrate, and the liquid crystal layer is positioned between the first substrate and the second substrate;

the phase shifter further includes a heating structure between the first substrate and the second substrate.

In a second aspect, an embodiment of the present invention further provides an antenna, including the phase shifter according to the first aspect.

According to the phase shifter and the antenna provided by the embodiment of the invention, the heating structure is arranged, so that when the phase shifter is in a low-temperature environment, the liquid crystal layer is heated through the heating structure, the temperature of liquid crystal molecules in the liquid crystal layer is increased, the liquid crystal molecules in the liquid crystal layer work in a normal temperature range, the liquid crystal layer is prevented from being influenced by the external low-temperature environment, and the problems that the phase shifter is slow in response in the low-temperature environment and even cannot work normally are solved. In addition, the heating structure is arranged between the first substrate and the second substrate, so that microwave loss is small, excessive space is not occupied, the overall structure size of the phase shifter is prevented from being greatly increased, and the miniaturization application of the phase shifter is facilitated; simultaneously with heating structure set up also make the distance between heating structure and the liquid crystal layer closer between first base plate and the second base plate, the heat that heating structure produced can be faster conduct to the liquid crystal layer to improve heating efficiency, realize the quick promotion of liquid crystal layer temperature.

Drawings

Fig. 1 is a schematic structural diagram of a phase shifter according to an embodiment of the present invention;

FIG. 2 is an enlarged schematic view of FIG. 1 at A;

FIG. 3 is a schematic cross-sectional view taken along line B-B' of FIG. 2;

FIG. 4 is a schematic diagram of another phase shifter according to an embodiment of the present invention;

FIG. 5 is an enlarged schematic view of FIG. 4 at C;

FIG. 6 is a schematic cross-sectional view taken along line D-D' of FIG. 5;

FIG. 7 is a schematic structural diagram of another phase shifter according to an embodiment of the present invention;

FIG. 8 is an enlarged schematic view of FIG. 7 at E;

FIG. 9 is a schematic cross-sectional view taken along line F-F' of FIG. 8;

FIG. 10 is a schematic diagram illustrating a partial cross-sectional structure of a phase shifter according to an embodiment of the present invention;

FIG. 11 is a schematic diagram illustrating a partial cross-sectional structure of another phase shifter according to an embodiment of the present invention;

FIG. 12 is a schematic diagram illustrating a partial cross-sectional structure of another phase shifter according to an embodiment of the present invention;

FIG. 13 is a schematic diagram illustrating a partial cross-sectional structure of another phase shifter according to an embodiment of the present invention;

FIG. 14 is a schematic structural diagram of a temperature measurement circuit according to an embodiment of the present invention;

FIG. 15 is a schematic diagram illustrating a partial cross-sectional structure of another phase shifter according to an embodiment of the present invention;

FIG. 16 is a schematic diagram illustrating a temperature measurement principle of a temperature measurement structure according to an embodiment of the present invention;

FIG. 17 is a schematic diagram illustrating a partial cross-sectional structure of another phase shifter according to an embodiment of the present invention;

FIG. 18 is a schematic diagram of a phase shifter according to another embodiment of the present invention;

FIG. 19 is an enlarged schematic view of FIG. 18 at G;

FIG. 20 is a schematic cross-sectional view taken along line H-H' of FIG. 19;

FIG. 21 is a schematic diagram illustrating a partial cross-sectional structure of another phase shifter according to an embodiment of the present invention;

FIG. 22 is a schematic diagram illustrating a partial cross-sectional structure of another phase shifter according to an embodiment of the present invention;

FIG. 23 is a schematic structural diagram of another phase shifter according to an embodiment of the present invention;

FIG. 24 is an enlarged schematic view at I of FIG. 23;

FIG. 25 is a schematic cross-sectional view taken along line J-J' of FIG. 24;

fig. 26 is a partial cross-sectional view of another phase shifter according to an embodiment of the present invention;

fig. 27 is a partial cross-sectional view of another phase shifter according to an embodiment of the present invention;

FIG. 28 is a schematic diagram illustrating a partial cross-sectional structure of another phase shifter according to an embodiment of the present invention;

FIG. 29 is a schematic diagram illustrating a partial cross-sectional structure of another phase shifter according to an embodiment of the present invention;

FIG. 30 is a schematic diagram illustrating a partial cross-sectional structure of another phase shifter according to an embodiment of the present invention;

FIG. 31 is a schematic diagram illustrating a partial cross-sectional structure of another phase shifter according to an embodiment of the present invention;

FIG. 32 is a schematic diagram illustrating a partial cross-sectional structure of another phase shifter according to an embodiment of the present invention;

FIG. 33 is a schematic diagram illustrating a partial cross-sectional structure of another phase shifter according to an embodiment of the present invention;

FIG. 34 is a schematic diagram illustrating a partial cross-sectional structure of another phase shifter according to an embodiment of the present invention;

FIG. 35 is a schematic diagram illustrating a partial cross-sectional structure of another phase shifter according to an embodiment of the present invention;

FIG. 36 is a schematic diagram of a phase shifter according to another embodiment of the present invention;

FIG. 37 is a schematic cross-sectional view taken along line K-K' of FIG. 36;

FIG. 38 is a schematic diagram illustrating the FBG temperature measurement provided by the embodiment of the present invention;

FIG. 39 is a schematic diagram of the temperature measurement of LPG provided in accordance with an embodiment of the present invention;

fig. 40 is a schematic structural diagram of an antenna according to an embodiment of the present invention;

fig. 41 is a schematic partial cross-sectional view of an antenna according to an embodiment of the present invention;

fig. 42 is a schematic partial cross-sectional view of another antenna according to an embodiment of the present invention;

fig. 43 is a schematic partial cross-sectional view of another antenna according to an embodiment of the present invention;

description of reference numerals:

a first substrate-10; a second substrate-11; a phase shift unit-12; a microstrip line-13; a liquid crystal layer-14; liquid crystal molecule-141; a ground metal layer-15; a first hollowed-out portion-151; a second hollowed-out portion-152; heating structure-16; a first heating structure-161; a second heating structure-162; a temperature measurement structure-17; a first metal line-171; a second metal line-172; a first temperature measurement structure-173; a second temperature measuring structure-174; fiber grating sensor-175; a first insulating layer-18; a second insulating layer-19; measuring instrument-20; a third insulating layer-21; a fourth insulating layer-22; a broadband light source-23; a circulator-24; an FBG sensor-25; a demodulator-26; LPG sensor-27; a radiation electrode-28; a feed network-29; a radio frequency signal interface-30; a pad-31.

Detailed Description

The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.

Fig. 1 is a schematic structural diagram of a phase shifter according to an embodiment of the present invention, fig. 2 is an enlarged structural diagram of fig. 1 at a, fig. 3 is a schematic structural diagram of a cross section of fig. 2 along a direction B-B', as shown in fig. 1 to 3, the phase shifter according to an embodiment of the present invention includes a first substrate 10 and a second substrate 11 that are disposed opposite to each other, and at least one phase shifting unit 12, where the phase shifting unit 12 includes a microstrip line 13, a liquid crystal layer 14, and a ground metal layer 15. The microstrip line 13 is located on one side of the first substrate 10 close to the second substrate 11, the grounding metal layer 15 is located on one side of the second substrate 11 close to the first substrate 10, and the liquid crystal layer 14 is located between the first substrate 10 and the second substrate 11. The phase shifter further includes a heating structure 16, the heating structure 16 being located between the first substrate 10 and the second substrate 11.

Specifically, as shown in fig. 1 to 3, the phase shifter refers to a device or apparatus capable of adjusting the phase of a wave. The phase shifter provided by the embodiment of the invention comprises a first substrate 10, a second substrate 11 and at least one phase shifting unit 12 which are oppositely arranged, wherein the phase shifting unit 12 comprises a liquid crystal layer 14 arranged between the first substrate 10 and the second substrate 11, a microstrip line 13 is arranged on one side of the liquid crystal layer 14 away from the second substrate 11, and a grounding metal layer 15 is arranged on one side of the liquid crystal layer 14 away from the first substrate 10. The microstrip line 13 is also used for transmitting radio frequency signals, the radio frequency signals are transmitted in the liquid crystal layer 14 between the microstrip line 13 and the ground metal layer 15, and the radio frequency signals transmitted on the microstrip line 13 are subjected to phase shifting due to the change of the dielectric constant of the liquid crystal layer 14, so that the phase of the radio frequency signals is changed, and the phase shifting function of the radio frequency signals is realized.

It should be noted that, the phase shifter may include a phase shifting unit 12, where one phase shifting unit 12 includes one microstrip line 13, and the phase shifting unit 12 is configured to implement a phase shifting function of the radio frequency signal transmitted on the microstrip line 13. Optionally, the phase shifter may also include a plurality of phase shifting units 12 distributed in an array to shift the phase of the radio frequency signal transmitted on the plurality of microstrip lines 13 at the same time, fig. 1 only takes the phase shifter including 16 phase shifting units 12 as an example, in other embodiments, a person skilled in the art may set the number and layout of the phase shifting units 12 according to actual requirements, which is not limited in the embodiment of the present invention.

With continued reference to fig. 1-3, the phase shifter further includes a heating structure 16, when the phase shifter is in a low temperature environment, the liquid crystal layer 14 can be heated by the heating structure 16 to raise the temperature of the liquid crystal molecules 141 in the liquid crystal layer 14, and ensure that the liquid crystal molecules 141 in the liquid crystal layer 14 work in a normal temperature range, thereby avoiding the influence of the external low temperature environment on the liquid crystal layer 14, and solving the problem that the phase shifter is slow in response or even unable to work normally in the low temperature environment.

With continued reference to fig. 1-3, the heating structure 16 is disposed between the first substrate 10 and the second substrate 11, which is advantageous in that it is not necessary to design a heating and thermal insulating device outside the phase shifter, thereby avoiding microwave loss caused by the external heating and thermal insulating device, and the heating structure 16 is disposed between the first substrate 10 and the second substrate 11 without occupying too much space, thereby avoiding a substantial increase in the overall size of the phase shifter, and facilitating miniaturization of the phase shifter. Meanwhile, the heating structure 16 is arranged between the first substrate 10 and the second substrate 11, so that the distance between the heating structure 16 and the liquid crystal layer 14 is shorter, heat generated by the heating structure 16 can be conducted to the liquid crystal layer 14 faster, the heating efficiency is improved, and the temperature of the liquid crystal layer 14 is rapidly increased.

According to the phase shifter provided by the embodiment of the invention, the heating structure 16 is arranged, so that when the phase shifter is in a low-temperature environment, the liquid crystal layer 14 is heated through the heating structure 16, the temperature of the liquid crystal molecules 141 in the liquid crystal layer 14 is increased, the liquid crystal molecules 141 in the liquid crystal layer 14 are ensured to work in a normal temperature range, the liquid crystal layer 14 is prevented from being influenced by an external low-temperature environment, and the problems that the phase shifter is slow in response and even cannot work normally in the low-temperature environment are solved. In addition, by arranging the heating structure 16 between the first substrate 10 and the second substrate 11, the microwave loss is small, and at the same time, too much space is not occupied, so that the overall structure size of the phase shifter is prevented from being greatly increased, and the miniaturization application of the phase shifter is facilitated; meanwhile, the heating structure 16 is arranged between the first substrate 10 and the second substrate 11, so that the distance between the heating structure 16 and the liquid crystal layer 14 is shorter, and heat generated by the heating structure 16 can be conducted to the liquid crystal layer 14 faster, so that the heating efficiency is improved, and the temperature of the liquid crystal layer 14 is increased rapidly.

Fig. 4 is a schematic structural diagram of another phase shifter according to an embodiment of the present invention, fig. 5 is an enlarged structural diagram of fig. 4 at C, and fig. 6 is a schematic structural diagram of a cross-section of fig. 5 along a direction D-D', as shown in fig. 4-6, optionally, the phase shifter according to the embodiment of the present invention further includes a temperature measurement structure 17, where the temperature measurement structure 17 is located between the first substrate 10 and the second substrate 11.

Specifically, as shown in fig. 4-6, the phase shifter further includes a temperature measurement structure 17, the temperature measurement structure 17 can monitor the temperature of the phase shifter in real time, and when the phase shifter is detected to be in a low temperature environment, the heating structure 16 heats the liquid crystal layer 14 to raise the temperature of the liquid crystal molecules 141 in the liquid crystal layer 14, so as to ensure that the liquid crystal molecules 141 in the liquid crystal layer 14 always work in a normal temperature range.

For example, a person skilled in the art may set a temperature threshold according to actual requirements, the temperature measuring structure 17 obtains the current temperature of the phase shifter in real time, and if the current temperature is higher than or equal to the temperature threshold, the heating structure 16 does not heat; if the current temperature is lower than the temperature threshold, the heating structure 16 starts to heat the liquid crystal layer 14 until the current temperature is higher than or equal to the temperature threshold, so that the liquid crystal molecules 141 in the liquid crystal layer 14 always work in the normal temperature range.

With continued reference to fig. 4-6, the temperature measurement structure 17 is disposed between the first substrate 10 and the second substrate 11, which is advantageous in that it is not necessary to design a temperature detection device outside the phase shifter, thereby avoiding microwave loss caused by external temperature detection, and the temperature measurement structure 17 is disposed between the first substrate 10 and the second substrate 11 without occupying too much space, thereby avoiding a substantial increase in the overall size of the phase shifter, and facilitating the miniaturization of the phase shifter. Meanwhile, the temperature measuring structure 17 is arranged between the first substrate 10 and the second substrate 11, so that the distance between the temperature measuring structure 17 and the liquid crystal layer 14 is shorter, the temperature of the liquid crystal layer 14 inside the phase shifter can be accurately detected, and accurate heating and heat preservation control can be performed on the liquid crystal layer 14.

With continued reference to fig. 1-6, optionally, the heating structure 16 includes a first heating structure 161, the first heating structure 161 being located on a side of the first substrate 10 adjacent to the microstrip line 13.

Specifically, as shown in fig. 1 to 6, the heating structure 16 may include a first heating structure 161 disposed on one side of the first substrate 10 close to the microstrip line 13, so that the distance between the first heating structure 161 and the liquid crystal layer 14 is relatively short, and heat generated by the first heating structure 161 can be quickly conducted to the liquid crystal layer 14, thereby improving heating efficiency and realizing quick temperature increase of the liquid crystal layer 14.

With continued reference to fig. 1 to 6, optionally, the first heating structure 161 and the microstrip line 13 are disposed in different layers, and a vertical projection of the first heating structure 161 on the first substrate 10 is located in a vertical projection of the microstrip line 13 on the first substrate 10, and the phase shifter further includes a first insulating layer 18, where the first insulating layer 18 is located on a side of the first heating structure 161 close to the microstrip line 13.

Specifically, as shown in fig. 1 to 6, the first heating structure 161 and the microstrip line 13 are arranged in different layers, the first heating structure 161 is located on one side of the microstrip line 13 away from the liquid crystal layer 14, and the vertical projection of the first heating structure 161 on the first substrate 10 is located in the vertical projection of the microstrip line 13 on the first substrate 10, that is, along the thickness direction of the first substrate 10, the microstrip line 13 covers the first heating structure 161, so that the influence of the first heating structure 161 on the radio frequency signal transmitted above the microstrip line 13 is reduced, and the performance of the phase shifter is ensured.

With continued reference to fig. 1 to 6, a first insulating layer 18 is further disposed on a side of the first heating structure 161 close to the microstrip line 13, so as to isolate the first heating structure 161 from the microstrip line 13, and prevent a short circuit from occurring between the first heating structure 161 and the microstrip line 13.

It should be noted that the material and the thickness of the first insulating layer 18 may be set according to actual requirements, for example, the material of the first insulating layer 18 is SiN or SiO, so as to ensure the insulating property and reduce the manufacturing difficulty, and the thickness of the first insulating layer 18 may be set according to the material, which is not limited in the embodiment of the present invention.

Fig. 7 is a schematic structural diagram of another phase shifter according to an embodiment of the present invention, fig. 8 is an enlarged structural diagram of fig. 7 at E, and fig. 9 is a schematic structural diagram of a cross-section of fig. 8 along a direction F-F', where, alternatively, a gap exists between a vertical projection of the first heating structure 161 on the first substrate 10 and a vertical projection of the microstrip line 13 on the first substrate 10.

Specifically, as shown in fig. 7 to 9, a gap exists between a vertical projection of the first heating structure 161 on the first substrate 10 and a vertical projection of the microstrip line 13 on the first substrate 10, that is, the vertical projection of the first heating structure 161 on the first substrate 10 and the vertical projection of the microstrip line 13 on the first substrate 10 are not overlapped, so as to reduce a coupling capacitance between the first heating structure 161 and the microstrip line 13, thereby reducing an influence of the first heating structure 161 on a radio frequency signal transmitted on the microstrip line 13, and improving a phase shifting performance of the phase shifter.

It should be noted that, as shown in fig. 9, the first heating structure 161 and the microstrip line 13 may be disposed in different layers, the first heating structure 161 is located on a side of the microstrip line 13 away from the liquid crystal layer 14, and a first insulating layer 18 is further disposed on a side of the first heating structure 161 close to the liquid crystal layer 14 to isolate the first heating structure 161 from the liquid crystal layer 14, so as to protect the first heating structure 161.

Fig. 10 is a schematic partial cross-sectional structure diagram of a phase shifter according to an embodiment of the present invention, and as shown in fig. 10, optionally, the first heating structure 161 and the microstrip line 13 may also be disposed in the same layer, which is beneficial to reducing the thickness of the phase shifter, and is further beneficial to implementing a miniaturized phase shifter.

With reference to fig. 9 and 10, optionally, in a direction perpendicular to the first substrate 10, a shortest distance between a boundary of the first heating structure 161 on a side close to the microstrip line 13 and a boundary of the microstrip line 13 on a side close to the first heating structure 161 is D1, and a width of the microstrip line 13 is D2, where D1 is ≧ 5 × D2.

As shown in fig. 9 and 10, the radio frequency signal transmitted on the microstrip line 13 may spread a certain distance to the periphery of the microstrip line 13, and in this embodiment, by setting the shortest distance D1 between the boundary of the first heating structure 161 close to the microstrip line 13 and the boundary of the microstrip line 13 close to the first heating structure 161 to be greater than 5 times D2, the coupling capacitance between the first heating structure 161 and the microstrip line 13 is reduced, and at the same time, the influence of the first heating structure 161 on the radio frequency signal is reduced, so that the phase shifting performance of the phase shifter is improved.

Fig. 11 is a schematic partial cross-sectional structure view of another phase shifter according to an embodiment of the present invention, as shown in fig. 11, optionally, the first heating structure 161 and the microstrip line 13 are arranged in different layers, and the phase shifter further includes a first insulating layer 18, where the first insulating layer 18 is located on a side of the first heating structure 161 close to the microstrip line 13. The vertical projection of at least part of the first heating structure 161 on the first substrate 10 is located within the vertical projection of the microstrip line 13 on the first substrate 10; a gap exists between a vertical projection of at least a part of the first heating structure 161 on the first substrate 10 and a vertical projection of the microstrip line 13 on the first substrate 10.

As shown in fig. 11, in this embodiment, a vertical projection of a portion of the first heating structure 161 on the first substrate 10 may be located in a vertical projection of the microstrip line 13 on the first substrate 10, and a gap exists between the vertical projection of the portion of the first heating structure 161 on the first substrate 10 and the vertical projection of the microstrip line 13 on the first substrate 10, so that the design of the first heating structure 161 is more flexible, and the routing is facilitated.

Fig. 12 is a partial cross-sectional view of another phase shifter according to an embodiment of the present invention, as shown in fig. 12, optionally, the heating structure 16 includes a second heating structure 162, and the second heating structure 162 is located on a side of the second substrate 11 close to the ground metal layer 15.

Specifically, as shown in fig. 12, the heating structure 16 may include a second heating structure 162 disposed on one side of the second substrate 11 close to the ground metal layer 15, so that the distance between the second heating structure 162 and the liquid crystal layer 14 is relatively short, and heat generated by the second heating structure 162 can be quickly conducted to the liquid crystal layer 14, thereby improving heating efficiency and realizing quick temperature increase of the liquid crystal layer 14.

With continued reference to fig. 12, optionally, the second heating structure 162 and the ground metal layer 15 are disposed in different layers, and a vertical projection of the second heating structure 162 on the first substrate 10 is located within a vertical projection of the ground metal layer 15 on the first substrate 10. The phase shifter further includes a second insulating layer 19, the second insulating layer 19 being located on a side of the second heating structure 162 adjacent to the ground metal layer 15.

Specifically, as shown in fig. 12, the second heating structure 162 and the ground metal layer 15 are disposed in different layers, and the second heating structure 162 is located on a side of the ground metal layer 15 away from the liquid crystal layer 14. The ground metal layer 15 includes a first hollow 151, so that the rf signal is radiated outward at the first hollow 151. In this embodiment, by disposing the vertical projection of the second heating structure 162 on the first substrate 10 to be located in the vertical projection of the ground metal layer 15 on the first substrate 10, that is, along the thickness direction of the first substrate 10, the ground metal layer 15 covers the second heating structure 162, and the second heating structure 162 does not overlap with the first hollow portion 151, so as to reduce the influence of the second heating structure 162 on the radio frequency signal and ensure the performance of the phase shifter.

With continued reference to fig. 12, a second insulating layer 19 is further disposed on a side of the second heating structure 162 close to the ground metal layer 15 to isolate the second heating structure 162 from the ground metal layer 15, so as to prevent a short circuit between the second heating structure 162 and the ground metal layer 15.

It should be noted that the material and the thickness of the second insulating layer 19 may be set according to actual requirements, for example, the material of the second insulating layer 19 is SiN or SiO, so as to reduce the preparation difficulty while ensuring the insulating property, and the thickness of the second insulating layer 19 may be set according to the material, which is not limited in the embodiment of the present invention.

Fig. 13 is a schematic partial cross-sectional structure diagram of another phase shifter according to an embodiment of the present invention, as shown in fig. 13, optionally, the heating structure 16 includes a first heating structure 161 and a second heating structure 162, where the first heating structure 161 is located on a side of the first substrate 10 close to the microstrip line 13, and the second heating structure 162 is located on a side of the second substrate 11 close to the ground metal layer 15.

As shown in fig. 13, the heating structure 16 is disposed on both opposite sides of the liquid crystal layer 14 by including the first heating structure 161 and the second heating structure 162 at the same time when the heating structure 16 is disposed, so as to increase the heating speed of the liquid crystal layer 14, which helps to ensure that the liquid crystal molecules 141 in the liquid crystal layer 14 always operate in the normal temperature range.

Optionally, the heating structure 16 includes a conductor, the width of the heating structure 16 is W1, the length of the heating structure 16 is L1, and the thickness of the heating structure 16 is d1, wherein (W1 × d1)/L1 ═ P1 × ρ 1)/(U1²) P1 is the heating power of the heating structure 16, ρ 1 is the resistivity of the heating structure 16, and U1 is the voltage of the heating structure 16.

The conductor is a substance having a small resistivity and easily conducting a current, and in the present embodiment, the heating structure 16 is a conductor, and the liquid crystal layer 14 of the phase shifter is electrically heated by using thermal energy generated by joule effect of a current flowing through the conductor.

Specifically, the flow of current through the heating structure 16 generates joule heat, the amount of which is related to the power, and the amount of power P1 of the heating structure 16 can be represented by the following formula:

P1＝U1²/R1；

where U1 is the voltage of the heating structure 16, i.e., the voltage applied to the heating structure 16, and R1 is the resistance of the heating structure 16. The resistance R1 of the heating structure 16 may be expressed as:

R1＝(ρ1*L1)/S1＝(ρ1*L1)/(W1*d1)；

where ρ 1 is the resistivity of the heating structure 16, ρ 1 is determined by the material of the heating structure 16, S1 is the cross-sectional area of the heating structure 16, L1 is the length of the heating structure 16, W1 is the width of the heating structure 16, and d1 is the thickness of the heating structure 16.

As can be seen from the above formula, the heating capacity of the heating structure 16 is related to the material, length, width and thickness of the heating structure 16, and in the present embodiment, the size of the heating structure 16 is set to satisfy (W1 × d1)/L1 ═ P1 × ρ 1)/(U1²) The specific dimensions of the heating structure 16 can thus be set according to the actual power required for heating and the applied voltage.

Optionally, the material of the heating structure 16 includes any one of copper, platinum, ITO, nickel, molybdenum, aluminum, and cadmium.

Wherein table 1 shows the resistivity and temperature coefficient of copper, platinum, ITO, nickel, molybdenum, aluminum, and cadmium, referring to table 1, as described above, the heating capacity of the heating structure 16 is related to the resistivity of the heating structure 16, in this embodiment, the resistivity of the heating structure 16 is made to meet the heating requirement of the phase shifter by setting the material of the heating structure 16 to include any one of copper, platinum, ITO, nickel, molybdenum, aluminum, and cadmium.

TABLE 1

Material	Resistivity ρ (Ω. m)	Temperature coefficient a (Ω. m/. degree.C.)
			Copper (Cu)	1.75*10^-8	0.00393
Platinum (II)	10.6*10^-8	0.00374
			ITO	10^-6Magnitude of the order
Nickel (II)	6.84*10^-8	0.0069
			Molybdenum (Mo)	5.2*10^-8
Aluminium	2.65*10^-8	0.00429
			Cadmium (Cd)	6.83*10^-8	0.0042

Alternatively, the heating structure 16 may be connected to a heating circuit for providing current to the heating structure 16 to perform the heating function of the heating structure 16.

Wherein, the heating circuit can be disposed on the first substrate 10, and the heating structure 16 is directly electrically connected to the heating circuit; alternatively, the heating Circuit may be disposed on an external Circuit board, and the heating structure 16 is electrically connected to the heating Circuit through a Flexible Printed Circuit (FPC), which may be set by a person skilled in the art according to actual requirements.

Optionally, the temperature measuring structure 17 includes a conductor, the width of the temperature measuring structure 17 is W2, the length of the temperature measuring structure 17 is L2, and the thickness of the temperature measuring structure 17 is d2, where L2/(W2 × d2) ═ ρ 2/R2, ρ 2 is the resistivity of the temperature measuring structure 17, and R2 is the resistance of the temperature measuring structure 17.

The conductor is a substance which has small resistivity and is easy to conduct current, and in the embodiment, the temperature measuring structure 17 is arranged as the conductor to detect the temperature by adopting a thermal resistance temperature measuring mode, wherein the thermal resistance temperature measuring mode is used for measuring the temperature based on the resistance thermal effect of the conductor, namely the characteristic that the resistance value of the conductor changes along with the change of the temperature.

Specifically, when the temperature changes, the resistivity ρ 2 of the thermometric structure 17 changes, and the resistivity ρ 2 can be expressed as:

ρ2＝ρ0*[1+α*(T2-T0)]；

wherein T0 is the initial temperature, T2 is the current temperature, ρ 0 is the resistivity of the temperature measurement structure 17 at the temperature of T0, ρ 2 is the resistivity of the temperature measurement structure 17 at the temperature of T2, and α is the temperature coefficient of the temperature measurement structure 17.

Therefore, when the ambient temperature changes, the resistivity of the temperature measurement structure 17 can be changed, so that the resistance of the temperature measurement structure 17 can also change accordingly, in the embodiment, the temperature measurement structure 17 is arranged to be a conductor, and the change of the ambient temperature can be obtained by detecting the change of the resistance of the temperature measurement structure 17.

Optionally, the material of the temperature measuring structure 17 includes any one of copper, platinum, ITO, nickel, molybdenum, aluminum, and cadmium.

With continued reference to table 1, as described above, the resistivity change of the temperature measurement structure 17 is related to the temperature coefficient of the resistivity of the temperature measurement structure 17, and in this embodiment, the temperature coefficient of the temperature measurement structure 17 meets the temperature measurement requirement of the phase shifter by setting the material of the temperature measurement structure 17 to include any one of copper, platinum, ITO, nickel, molybdenum, aluminum, and cadmium.

Optionally, the temperature measuring structure 17 may be connected to a temperature measuring circuit, and the temperature measuring circuit is configured to obtain the resistance of the temperature measuring structure 17 to measure the temperature.

Wherein, the temperature measuring circuit can be arranged on the first substrate 10, and the temperature measuring structure 17 is directly and electrically connected with the temperature measuring circuit; or, the temperature measuring Circuit can also be arranged on an external Circuit board, the temperature measuring structure 17 is electrically connected with the temperature measuring Circuit through a Flexible Printed Circuit (FPC), and the technical personnel in the field can set the temperature measuring Circuit according to actual requirements.

For example, fig. 14 is a schematic structural diagram of a temperature measuring circuit according to an embodiment of the present invention, as shown in fig. 14, in this embodiment, the temperature measuring circuit may adopt a wheatstone bridge, the wheatstone bridge is a bridge circuit composed of four resistors, the four resistors are respectively called as bridge arms of the bridge, the wheatstone bridge measures a change of a physical quantity by using a change of the resistors, and a voltage across two ends of the variable resistor is collected and then processed, so that a corresponding change of the physical quantity can be calculated, which is a measurement mode with high precision.

With continued reference to FIG. 14, three resistors in the Wheatstone bridge have fixed values r1, r2, and r3, and the fourth resistor has a variable value rx, wherein the thermometric structure 17 provided in the embodiment of the present invention can be used as the fourth resistor.

When rx changes, the voltage between the node b and the node d in the graph changes, and the change of the physical quantity in the environment can be known by collecting the change of the voltage, so that the purpose of measurement is realized.

Specifically, with continued reference to fig. 14, assume that the current flowing through the r1, r2 leg is I1; and the current flows through r3, the current of the rx bridge arm is I2, and the power supply voltage of the bridge is VCC. On two bridge arms of r1 and r2, VCC voltage is divided by r1 and r2, and voltage obtained at two ends of a resistor of r2 is V1; on the bridge arm of r3 and rx, r3 and rx divide the voltage of VCC, and the voltage obtained at the two ends of the r3 resistor is V2.

The current I1 flowing through the resistors r1 and r2 can be expressed as: i1 ═ VCC/(r1+ r 2);

the voltage V1 across r2 can be expressed as: v1 ═ I1 ═ r2 ═ VCC (r2/((r1+ r 2)));

the current I2 flowing through resistors r3 and rx can be expressed as: i2 ═ VCC/(r3+ rx);

the voltage V2 across r3 can be expressed as: v2 ═ I2 ═ r3 ═ VCC (r3/((r3+ rx)));

the voltage difference between V1 and V2 can be expressed as: Δ V ═ V1-V2 ═ VCC ((r2 × rx-r3 × r1)/((r1+ r2) × (r3+ rx)));

therefore, the value of rx can be obtained from the voltage difference between V1 and V2, and the temperature change can be estimated.

Fig. 15 is a partial cross-sectional structural diagram of another phase shifter according to an embodiment of the present invention, and as shown in fig. 15, optionally, the temperature measuring structure 17 includes a first metal wire 171 and a second metal wire 172 connected to each other, and the first metal wire 171 and the second metal wire 172 are made of different materials.

Specifically, as shown in fig. 15, the temperature measuring structure 17 includes a first metal wire 171 and a second metal wire 172 made of different materials, and the first metal wire 171 and the second metal wire 172 are electrically connected to form a thermocouple, so as to measure the temperature by using a thermocouple method.

Fig. 16 is a schematic diagram illustrating a temperature measurement principle of a temperature measurement structure according to an embodiment of the present invention, as shown in fig. 16, when a first metal wire 171 and a second metal wire 172 made of different materials form a loop, and when two ends of the loop are connected to each other, as long as temperatures at two junctions are different (one end is t, which is called a working end or a hot end, and the other end is t0, which is called a free end (also called a reference end) or a cold end), an electromotive force is generated in the loop, and a direction and a magnitude of the electromotive force are related to the materials of the first metal wire 171 and the second metal wire 172 and temperatures of two junctions, which is called a "thermoelectric effect", a loop made of the two kinds of the first metal wire 171 and the second metal wire 172 is called a "thermocouple", and a generated electromotive force is called a "thermoelectric force".

The magnitude of the thermoelectromotive force in the thermocouple loop is related to only the materials of the first and

second metal wires

171 and 172 constituting the thermocouple and the temperatures of both junctions, and is not related to the shape and size of the thermocouple. When the material of the two hot electrodes of the thermocoupleAfter the material is fixed, thermoelectric potential E_{171 172}(t, t0) is the difference between the two junction temperatures t and t0 as a function of time. Namely:

E_{171 172}(t，t0)＝f(t)-f(t0)＝f(t)-C＝φ(t)；

wherein C represents the value of f (t0) when the reference end temperature t0 is constant, and the total thermoelectromotive force only has a single-value function relation with the hot end temperature t according to the formula, so that the value of the thermoelectromotive force is measured, namely the size of the temperature t can be known, and the temperature can be measured by utilizing the property of a thermocouple.

Meanwhile, when a third metal material is connected into the thermocouple loop, as long as the temperatures of two junctions of the material are the same, the thermoelectromotive force generated by the thermocouple is kept unchanged, namely is not influenced by the connection of the third metal into the loop. Therefore, as shown in fig. 16, during the thermocouple temperature measurement, the measuring instrument 20 can be accessed, and after the thermoelectromotive force is measured, the current temperature can be obtained.

With continued reference to fig. 15, optionally, the first metal line 171 and the second metal line 172 are disposed in the same layer.

As shown in fig. 15, the first metal line 171 and the second metal line 172 are provided in the same layer, which contributes to reducing the thickness of the phase shifter and further contributes to realizing a miniaturized phase shifter.

Fig. 17 is a schematic partial cross-sectional view of another phase shifter according to an embodiment of the present invention, as shown in fig. 17, optionally, the first metal line 171 and the second metal line 172 are located at different layers.

Specifically, as shown in fig. 17, since the first metal line 171 and the second metal line 172 are made of different materials, the difficulty of the manufacturing process can be reduced and the implementation is easy by disposing the first metal line 171 and the second metal line 172 on different layers.

For example, as shown in fig. 17, the first metal lines 171 are located on a side of the first substrate 10 close to the liquid crystal layer 14, and the second metal lines 172 are located on a side of the first metal lines 171 close to the liquid crystal layer 14. In other embodiments, the second metal lines 172 may also be disposed on a side of the first substrate 10 close to the liquid crystal layer 14, and the first metal lines 171 are disposed on a side of the second metal lines 172 close to the liquid crystal layer 14, which is not limited in this embodiment of the invention.

With continued reference to fig. 3-6, optionally, the temperature measuring structure 17 includes a first temperature measuring structure 173, and the first temperature measuring structure 173 is located on a side of the first substrate 10 close to the microstrip line 13.

Specifically, as shown in fig. 3 to 6, the temperature measurement structure 17 may include a first temperature measurement structure 173 disposed on a side of the first substrate 10 close to the microstrip line 13, so that a distance between the first temperature measurement structure 173 and the liquid crystal layer 14 is relatively short, thereby accurately detecting a temperature of the liquid crystal layer 14 inside the phase shifter, and further implementing accurate heating and heat preservation control for the liquid crystal layer 14.

With reference to fig. 6, optionally, the first temperature measurement structure 173 and the microstrip line 13 are disposed in different layers, and a vertical projection of the first temperature measurement structure 173 on the first substrate 10 is located in a vertical projection of the microstrip line 13 on the first substrate 10. The phase shifter further includes a third insulating layer 21, and the third insulating layer 21 is located on one side of the first temperature measuring structure 173 close to the microstrip line 13.

Specifically, as shown in fig. 6, the first temperature measurement structure 173 and the microstrip line 13 are disposed in different layers, the first temperature measurement structure 173 is located on one side of the microstrip line 13 away from the liquid crystal layer 14, and the vertical projection of the first temperature measurement structure 173 on the first substrate 10 is located in the vertical projection of the microstrip line 13 on the first substrate 10, that is, along the thickness direction of the first substrate 10, the microstrip line 13 covers the first temperature measurement structure 173, so that the influence of the first temperature measurement structure 173 on the radio frequency signal transmitted above the microstrip line 13 is reduced, and the performance of the phase shifter is ensured.

With reference to fig. 6, a third insulating layer 21 is further disposed on a side of the first temperature measuring structure 173 close to the microstrip line 13, so as to isolate the first temperature measuring structure 173 from the microstrip line 13, and prevent a short circuit between the first temperature measuring structure 173 and the microstrip line 13.

It should be noted that the material and the thickness of the third insulating layer 21 may be set according to actual requirements, for example, the material of the third insulating layer 21 is SiN or SiO, so as to reduce the preparation difficulty while ensuring the insulating property, and the thickness of the third insulating layer 21 may be set according to the material, which is not limited in the embodiment of the present invention.

Fig. 18 is a schematic structural diagram of another phase shifter according to an embodiment of the present invention, fig. 19 is an enlarged structural diagram of fig. 18 at G, fig. 20 is a schematic structural diagram of a cross section of fig. 19 along the direction H-H', as shown in fig. 18-20, alternatively, a gap exists between a vertical projection of the first temperature measurement structure 173 on the first substrate 10 and a vertical projection of the microstrip line 13 on the first substrate 10.

Specifically, as shown in fig. 18 to 20, a gap exists between a vertical projection of the first temperature measurement structure 173 on the first substrate 10 and a vertical projection of the microstrip line 13 on the first substrate 10, that is, the vertical projection of the first temperature measurement structure 173 on the first substrate 10 is not overlapped with the vertical projection of the microstrip line 13 on the first substrate 10, so as to reduce a coupling capacitance between the first temperature measurement structure 173 and the microstrip line 13, thereby reducing an influence of the first temperature measurement structure 173 on the radio frequency signal transmitted on the microstrip line 13, and improving a phase shifting performance of the phase shifter.

It should be noted that, as shown in fig. 20, the first temperature measurement structure 173 and the microstrip line 13 may be disposed in different layers, the first temperature measurement structure 173 is located on a side of the microstrip line 13 away from the liquid crystal layer 14, and a third insulating layer 21 is further disposed on a side of the first temperature measurement structure 173 close to the liquid crystal layer 14 to isolate the first temperature measurement structure 173 from the liquid crystal layer 14, so as to protect the first temperature measurement structure 173.

Fig. 21 is a schematic partial cross-sectional structure diagram of another phase shifter according to an embodiment of the present invention, as shown in fig. 21, optionally, the first temperature measurement structure 173 and the microstrip line 13 may be disposed in the same layer, which is beneficial to reducing the thickness of the phase shifter, and is further beneficial to implementing a miniaturized phase shifter.

With reference to fig. 20 and 21, optionally, along a direction perpendicular to the first substrate 10, a shortest distance between a boundary of the first temperature measurement structure 173 close to the microstrip line 13 and a boundary of the microstrip line 13 close to the first temperature measurement structure 173 is D3, and a width of the microstrip line 13 is D2, where D3 is greater than or equal to 5 × D2.

As shown in fig. 20 and fig. 21, the radio frequency signal transmitted on the microstrip line 13 will spread a certain distance to the periphery of the microstrip line 13, and in this embodiment, by setting the shortest distance D1 between the boundary of the first temperature measurement structure 173 close to the microstrip line 13 and the boundary of the microstrip line 13 close to the first temperature measurement structure 173 to be greater than 5 times D2, the coupling capacitance between the first temperature measurement structure 173 and the microstrip line 13 is reduced, and at the same time, the influence of the first temperature measurement structure 173 on the radio frequency signal is reduced, so that the phase shifting performance of the phase shifter is improved.

Fig. 22 is a schematic partial cross-sectional structure diagram of another phase shifter according to an embodiment of the present invention, as shown in fig. 22, optionally, the first temperature measurement structure 173 and the microstrip line 13 are arranged in different layers, the phase shifter further includes a third insulating layer 21, and the third insulating layer 21 is located on a side of the first temperature measurement structure 173 close to the microstrip line 13. The vertical projection of at least part of the first temperature measurement structure 173 on the first substrate 10 is located in the vertical projection of the microstrip line 13 on the first substrate 10; a gap exists between the vertical projection of at least part of the first thermometric structure 173 on the first substrate 10 and the vertical projection of the microstrip line 13 on the first substrate 10.

As shown in fig. 22, in this embodiment, a vertical projection of a portion of the first temperature measurement structure 173 on the first substrate 10 may be located in a vertical projection of the microstrip line 13 on the first substrate 10, and a gap exists between the vertical projection of the portion of the first temperature measurement structure 173 on the first substrate 10 and the vertical projection of the microstrip line 13 on the first substrate 10, so that the first temperature measurement structure 173 is more flexible in design, thereby facilitating routing.

Fig. 23 is a schematic structural diagram of another phase shifter according to an embodiment of the present invention, fig. 24 is an enlarged structural diagram of fig. 23 at I, fig. 25 is a schematic structural diagram of a cross section of fig. 24 along the direction J-J', as shown in fig. 23-25, alternatively, the temperature measurement structure 17 includes a second temperature measurement structure 174, and the second temperature measurement structure 174 is located on a side of the second substrate 11 close to the ground metal layer 15.

Specifically, as shown in fig. 23 to 25, the temperature measurement structure 17 may include a second temperature measurement structure 174 disposed on a side of the second substrate 11 close to the ground metal layer 15, so that the distance between the second temperature measurement structure 174 and the liquid crystal layer 14 is relatively short, the temperature measurement points may be increased by the second temperature measurement structure 174, and the measured temperature is closer to the real-time temperature due to the fact that the second temperature measurement structure is relatively close to the liquid crystal layer 14, thereby more accurately monitoring the temperature distribution of the liquid crystal.

With continued reference to fig. 25, optionally, the second thermometric structure 174 and the ground metal layer 15 are arranged in different layers, and the perpendicular projection of the second thermometric structure 174 on the first substrate 10 is located within the perpendicular projection of the ground metal layer 15 on the first substrate 10. The phase shifter further includes a fourth insulating layer 22, and the fourth insulating layer 22 is located on a side of the second temperature measuring structure 174 close to the ground metal layer 15.

Specifically, as shown in fig. 25, the second temperature measurement structure 174 and the grounding metal layer 15 are disposed in different layers, and the second temperature measurement structure 174 is located on the side of the grounding metal layer 15 away from the liquid crystal layer 14. The ground metal layer 15 includes a first hollow 151, so that the rf signal is radiated outward at the first hollow 151. In this embodiment, the perpendicular projection of the second temperature measurement structure 174 on the first substrate 10 is located in the perpendicular projection of the ground metal layer 15 on the first substrate 10, that is, along the thickness direction of the first substrate 10, the ground metal layer 15 covers the second temperature measurement structure 174, and the second temperature measurement structure 174 does not overlap with the first hollow portion 151, so that the influence of the second temperature measurement structure 174 on the radio frequency signal is reduced, and the performance of the phase shifter is ensured.

With reference to fig. 25, a fourth insulating layer 22 is further disposed on a side of the second temperature measuring structure 174 close to the ground metal layer 15, so as to isolate the second temperature measuring structure 174 from the ground metal layer 15, and prevent a short circuit from occurring between the second temperature measuring structure 174 and the ground metal layer 15.

It should be noted that the material and the thickness of the fourth insulating layer 22 may be set according to actual requirements, for example, the material of the fourth insulating layer 22 is SiN or SiO, so as to ensure insulation and reduce the manufacturing difficulty, and the thickness of the fourth insulating layer 22 may be set according to the material, which is not limited in the embodiment of the present invention.

With reference to fig. 25, optionally, the temperature measuring structure 17 includes a first temperature measuring structure 173 and a second temperature measuring structure 174, where the first temperature measuring structure 173 is located on a side of the first substrate 10 close to the microstrip line 13, and the second temperature measuring structure 174 is located on a side of the second substrate 11 close to the ground metal layer 15.

As shown in fig. 25, the temperature measuring structure 17 includes the first temperature measuring structure 173 and the second temperature measuring structure 174, so that the temperature measuring structures 17 are disposed on two opposite sides of the liquid crystal layer 14, and the temperature of the liquid crystal molecules 141 in the liquid crystal layer 14 can be more accurately obtained by comparing the temperatures measured by the first temperature measuring structure 173 and the second temperature measuring structure 174.

Fig. 26 is a schematic partial cross-sectional view of another phase shifter according to an embodiment of the present invention, and fig. 27 is a schematic partial cross-sectional view of another phase shifter according to an embodiment of the present invention, as shown in fig. 6, 26 and 27, alternatively, the heating structure 16 and the temperature measuring structure 17 are disposed in the same layer, and the heating structure 16 and the temperature measuring structure 17 are insulated from each other.

The heating structure 16 and the temperature measuring structure 17 are arranged on the same layer, so that the thickness of the phase shifter is reduced, and the miniaturized phase shifter is realized.

Meanwhile, the heating structure 16 is connected with the heating circuit, the temperature measuring structure 17 is connected with the temperature measuring circuit, and the heating structure 16 and the temperature measuring structure 17 are insulated, so that the heating structure 16 and the temperature measuring structure 17 can work independently at the same time, and the instantaneity of temperature measurement and heating is ensured.

Exemplarily, as shown in fig. 6, the heating structure 16 and the temperature measuring structure 17 may be disposed on a side of the first substrate 10 close to the microstrip line 13, and in this case, the first insulating layer 18 and the third insulating layer 21 may be the same insulating layer, so as to further reduce the thickness of the phase shifter.

Continuing to refer to FIG. 26, for example, the heating structure 16 and the thermometric structure 17 may also be disposed on the side of the second substrate 11 near the ground metal layer 15, and in this case, the second insulating layer 19 and the fourth insulating layer 22 may be the same insulating layer, so as to further reduce the thickness of the phase shifter.

Continuing to refer to fig. 27, illustratively, the heating structure 16 and the temperature measuring structure 17 may also be disposed on both the side of the first substrate 10 close to the microstrip line 13 and the side of the second substrate 11 close to the ground metal layer 15, in which case, the first insulating layer 18 and the third insulating layer 21 may be the same insulating layer, and the second insulating layer 19 and the fourth insulating layer 22 may be the same insulating layer, so as to further reduce the thickness of the phase shifter.

Fig. 28 is a partial cross-sectional structural view of another phase shifter according to an embodiment of the present invention, as shown in fig. 28, and optionally, the temperature measuring structures 17 and the heating structures 16 are alternately arranged along a direction parallel to the first substrate 10.

As shown in fig. 28, the temperature measuring structures 17 and the heating structures 16 are alternately arranged, so that the temperature measuring structures 17 and the heating structures 16 are adjacent to each other, and thus when the temperature measured by one temperature measuring structure 17 is low, the adjacent heating structure 16 is controlled to perform targeted local heating, which is helpful for improving the temperature uniformity of the phase shifter.

With continued reference to fig. 3-6, optionally, the thermometric structure 17 is disposed around the heating structure 16 in a direction perpendicular to the first substrate 10, or alternatively, the heating structure 16 is disposed around the thermometric structure 17.

As shown in fig. 3-6, the temperature measuring structure 17 is disposed around the heating structure 16, so that the temperature measuring structure 17 is closer to the heating structure 16, and when the temperature measured by a certain temperature measuring structure 17 is lower, the surrounding heating structure 16 is controlled to perform targeted local heating, which is helpful for improving the temperature uniformity of the phase shifter.

In other embodiments, the heating structure 16 may be disposed around the temperature measuring structure 17, such that the temperature measuring structure 17 and the heating structure 16 are closer to each other, so that when the temperature measured by a certain temperature measuring structure 17 is lower, the heating structure 16 disposed around the certain temperature measuring structure may be controlled to perform targeted local heating, thereby improving the temperature uniformity of the phase shifter.

Fig. 29 is a schematic partial cross-sectional view of another phase shifter according to an embodiment of the present invention, as shown in fig. 19, and optionally, the heating structure 16 and the temperature measuring structure 17 share the same structure.

As shown in fig. 29, the heating structure 16 and the temperature measuring structure 17 are arranged to share the same structure, and compared with the respective arrangement of the heating structure 16 and the temperature measuring structure 17, the space occupied by the heating structure 16 and the temperature measuring structure 17 can be reduced on the premise of achieving the same heating effect; on the premise of occupying the same space, the heating structure 16 and the temperature measuring structure 17 can be distributed more densely, so that the temperature measuring accuracy and the heating rate are improved.

It should be noted that, when the heating structure 16 and the temperature measuring structure 17 share the same structure, the structure can be connected to the heating circuit and the temperature measuring circuit through the electronic switch, so that the heating circuit and the temperature measuring circuit are switched through the electronic switch, and the heating structure 16 and the temperature measuring structure 17 respectively work in the heating state and the temperature measuring state in different time sequences.

Optionally, the heating structure 16 and the thermometric structure 17 are located in different layers.

In this embodiment, the heating structure 16 and the temperature measuring structure 17 may be disposed at different layers, so as to improve the design flexibility of the heating structure 16 and the temperature measuring structure 17 and achieve corresponding beneficial effects.

The heating structure 16 and the temperature measuring structure 17 may be disposed on two sides of the liquid crystal layer 14, respectively, or may be disposed on the same side of the liquid crystal layer 14, as will be described in the following.

Illustratively, fig. 30 is a schematic partial cross-sectional view of another phase shifter according to an embodiment of the present invention, as shown in fig. 30, the heating structure 16 and the temperature measuring structure 17 can be respectively disposed on two sides of the liquid crystal layer 14, specifically, the heating structure 16 is disposed on one side of the first substrate 10 close to the microstrip line 13, the temperature measuring structure 17 is disposed on one side of the second substrate 11 close to the ground metal layer 15, by arranging the heating structure 16 and the temperature measuring structure 17 on both sides of the liquid crystal layer 14, when the phase shifter is in a low temperature environment, the heating structure 16 heats, and the heat generated by the heating structure 16 is conducted to the temperature measuring structure 17 through the liquid crystal layer 14, so that, when the temperature measuring structure 17 detects that the current temperature meets the working requirement of the phase shifter, it indicates that the temperature of the liquid crystal layer 14 meets the working requirement of the phase shifter, thereby ensuring that the liquid crystal molecules 141 in the liquid crystal layer 14 work in a normal temperature range.

Fig. 31 is a schematic partial cross-sectional structure diagram of another phase shifter according to an embodiment of the present invention, as shown in fig. 31, exemplarily, a heating structure 16 may be further disposed on a side of the second substrate 11 close to the ground metal layer 15, and a temperature measuring structure 17 is disposed on a side of the first substrate 10 close to the microstrip line 13, so that the heating structure 16 and the temperature measuring structure 17 may be respectively disposed on two sides of the liquid crystal layer 14, and those skilled in the art may set the structure according to actual requirements.

Fig. 32 is a schematic partial cross-sectional structure diagram of another phase shifter according to an embodiment of the present invention, as shown in fig. 32, the heating structure 16 and the temperature measuring structure 17 may be further disposed on the same side of the liquid crystal layer 14, for example, as shown in fig. 32, the heating structure 16 and the temperature measuring structure 17 are both disposed on one side of the first substrate 10 close to the microstrip line 13, and the heating structure 16 is disposed on one side of the temperature measuring structure 17 close to the liquid crystal layer 14, and by disposing the heating structure 16 and the temperature measuring structure 17 on the same side of the liquid crystal layer 14, and the heating structure 16 and the temperature measuring structure 17 are disposed on different layers, in a direction perpendicular to the first substrate 10, the heating structure 16 and the temperature measuring structure 17 may be at least partially overlapped, so as to facilitate routing arrangement of the heating structure 16 and the temperature measuring structure 17, and increase design flexibility of the heating structure 16 and the temperature measuring structure 17.

In other embodiments, the temperature measuring structure 17 can be disposed on the side of the heating structure 16 close to the liquid crystal layer, and those skilled in the art can set the temperature measuring structure according to actual requirements.

Fig. 33 is a schematic partial cross-sectional view of another phase shifter according to an embodiment of the present invention, as shown in fig. 33, exemplarily, the heating structure 16 and the temperature measuring structure 17 may also be both located on a side of the second substrate 11 close to the ground metal layer 15, and the heating structure 16 is located on a side of the temperature measuring structure 17 close to the liquid crystal layer 14, by disposing the heating structure 16 and the temperature measuring structure 17 on a same side of the liquid crystal layer 14, and the heating structure 16 and the temperature measuring structure 17 are located on different layers, in a direction perpendicular to the first substrate 10, the heating structure 16 and the temperature measuring structure 17 may be at least partially overlapped, so as to facilitate routing arrangement of the heating structure 16 and the temperature measuring structure 17, and increase design flexibility of the heating structure 16 and the temperature measuring structure 17.

It is to be understood that the present invention is not limited to the specific embodiments described above, and that any combination and modification of the above embodiments may be made by those skilled in the art according to actual needs.

Illustratively, fig. 34 is a schematic partial cross-sectional structure diagram of another phase shifter according to an embodiment of the present invention, as shown in fig. 34, the heating structure 16 includes a first heating structure 161, the first heating structure 161 is located on one side of the first substrate 10 close to the microstrip line 13, the temperature measuring structure 17 includes a first temperature measuring structure 173 and a second temperature measuring structure 174, the first temperature measuring structure 173 is located on one side of the first substrate 10 close to the microstrip line 13, the second temperature measuring structure 174 is located on one side of the second substrate 11 close to the ground metal layer 15, the vertical projection of the second temperature measurement structure 174 on the first substrate 10 is located in the vertical projection of the ground metal layer 15 on the first substrate 10, a gap exists between the vertical projection of the first heating structure 161 on the first substrate 10 and the vertical projection of the microstrip line 13 on the first substrate 10, and a gap exists between the vertical projection of the first temperature measurement structure 173 on the first substrate 10 and the vertical projection of the microstrip line 13 on the first substrate 10. With the above arrangement, as shown in fig. 34, the temperature of the liquid crystal molecules 141 in the liquid crystal layer 14 can be obtained more accurately by comparing the temperatures measured by the first temperature measuring structure 173 and the second temperature measuring structure 174. Meanwhile, the second temperature measuring structure 174 can be arranged opposite to the first heating structure 161, so that the second temperature measuring structure 174 is closer to the opposite first heating structure 161, and the second temperature measuring structure 174 can detect the temperature heated by the first heating structure 161 more quickly.

Fig. 35 is a schematic partial cross-sectional structure diagram of another phase shifter according to an embodiment of the present invention, as shown in fig. 35, exemplarily, the heating structure 16 includes a first heating structure 161, the first heating structure 161 is located on a side of the first substrate 10 close to the microstrip line 13, the temperature measuring structure 17 includes a first temperature measuring structure 173 and a second temperature measuring structure 174, the first temperature measuring structure 173 is located on a side of the first substrate 10 close to the microstrip line 13, the second temperature measuring structure 174 is located on a side of the second substrate 11 close to the ground metal layer 15, wherein a vertical projection of the first heating structure 161 on the first substrate 10 is located in a vertical projection of the microstrip line 13 on the first substrate 10, a vertical projection of the first temperature measuring structure 173 on the first substrate 10 is located in a vertical projection of the microstrip line 13 on the first substrate 10, a vertical projection of the second temperature measuring structure 174 on the first substrate 10 is located in a vertical projection of the ground metal layer 15 on the first substrate 10, the first temperature measuring structure 173 and the second temperature measuring structure 174 each include a first metal wire 171 and a second metal wire 172 connected to each other, and the first metal wire 171 and the second metal wire 172 are made of different materials, so that temperature measurement is performed by using a thermocouple method, which is not limited in the embodiment of the present invention.

Optionally, the thickness of the microstrip line 13 is greater than the skin depth.

Specifically, the radio frequency signal transmitted on the microstrip line 13 flows through the surface of the microstrip line 13 in a certain depth, which is the skin depth, in this embodiment, the thickness of the microstrip line 13 is set to be greater than the skin depth δ, so that the radio frequency signal does not penetrate through the microstrip line 13, and thus mutual influence between the heating structure 16 and/or the temperature measuring structure 17 below the microstrip line 13 and the radio frequency signal can be avoided.

Here, the skin depth δ may be represented as δ (1/pi f μ σ) × 1/2, μ represents the permeability of the microstrip line 13, σ represents the conductivity of the microstrip line 13, and f represents the frequency of the radio frequency signal carried by the microstrip line 13, so that the thickness of the microstrip line 13 may be specifically set according to the frequency of the radio frequency signal transmitted on the microstrip line 13. For example, when the radio frequency signal is a millimeter wave, the thickness of the microstrip line 13 is set to be greater than 2 μm.

Optionally, the thickness of the microstrip line 13 is set to be greater than 2 times of the skin depth δ, or the thickness of the microstrip line 13 is set to be greater than 3 times of the skin depth δ, so as to further reduce the mutual influence between the heating structure 16 and/or the temperature measuring structure 17 below the microstrip line 13 and the radio frequency signal.

Fig. 36 is a schematic structural diagram of another phase shifter according to an embodiment of the present invention, and fig. 37 is a schematic structural diagram of a cross section of fig. 36 along the direction K-K', as shown in fig. 36 and fig. 37, optionally, the temperature measuring structure 17 includes a fiber grating sensor 175.

The fiber grating is a diffraction grating formed by periodically modulating the refractive index of the fiber core in the axial direction by a certain method. There are many types of fiber gratings, mainly classified into two main types: one is a Bragg Grating (FBG), also known as a reflective or short-period Grating; the second is a transmission Grating, also called Long Period Grating (LPG).

Fig. 38 is a schematic diagram illustrating a principle of FBG temperature measurement according to an embodiment of the present invention, as shown in fig. 38, light emitted from the broadband light source 23 enters the FBG sensor 25 through the circulator 24, and light with a wavelength reflected by each FBG is reflected back, when the FBG sensor 25 is affected by an external temperature, the wavelength λ of the reflected light is shifted to a certain extent, and the change of the wavelength λ of each reflected light is demodulated by the demodulator 26, so as to obtain a current temperature.

Illustratively, as shown in fig. 38, the FBG sensor 25 includes a plurality of fiber gratings, which are FBG1, FBG2, FBG3 and FBG4, and the temperature of the FBGs 1, FBGs 2, FBGs 3 and FBGs 4 can be obtained by demodulating the variation of the wavelengths λ 1, λ 2, λ 3 and λ 4 of the reflected light of the FBGs 1, 2, FBGs 3 and FBGs 4 by the demodulator 26.

Fig. 39 is a schematic diagram illustrating a principle of measuring temperature of LPG according to an embodiment of the present invention, as shown in fig. 39, the broadband light source 23 enters the LPG sensor 27, light with wavelength attenuation satisfying each LPG is attenuated, and the remaining light passes through the LPG sensor. When the LPG sensor 27 is affected by the external temperature, the wavelength of the attenuated light will shift to some extent, and the current temperature can be obtained by demodulating the variation of each attenuated wavelength through the demodulator 26.

Illustratively, as shown in fig. 39, the LPG sensor 27 includes a plurality of fiber gratings, which are LPG1, LPG2, LPG3 and LPG4, and the temperature of the locations of the LPGs 1, LPG2, LPG3 and LPG4 can be obtained by demodulating the changes of the attenuation wavelengths λ 1, λ 2, λ 3 and λ 4 of the LPGs 1, LPG2, LPG3 and LPG4 through the demodulator 26.

In this embodiment, the fiber grating sensor 175 is disposed as the temperature measuring structure 17 for temperature monitoring, and since the material of the fiber grating has a small influence on the rf signal, the influence of the temperature measuring structure 17 on the performance of the phase shifter is reduced.

It should be noted that in other embodiments, other types of temperature sensors may also be used as the temperature measuring structure 17, and those skilled in the art may set the temperature sensors according to actual needs, which is not limited in the embodiments of the present invention.

With continued reference to FIG. 37, optionally, a fiber grating sensor 175 is located in the liquid crystal layer 14.

The fiber grating sensor 175 is directly disposed in the liquid crystal layer 14 to directly monitor the real-time temperature data of the liquid crystal layer 14, thereby improving the accuracy of temperature measurement.

With continued reference to fig. 37, optionally, there is a gap between the vertical projection of the fiber grating sensor 175 on the first substrate 10 and the vertical projection of the microstrip line 13 on the first substrate 10.

A gap is formed between the vertical projection of the fiber grating sensor 175 on the first substrate 10 and the vertical projection of the microstrip line 13 on the first substrate 10, that is, the vertical projection of the fiber grating sensor 175 on the first substrate 10 and the vertical projection of the microstrip line 13 on the first substrate 10 are not overlapped, so that the fiber grating sensor 175 is prevented from affecting the thickness of the liquid crystal layer 14 on the microstrip line 13, and the phase shift precision of the liquid crystal layer 14 is improved.

With reference to fig. 4, optionally, the phase shifter provided in the embodiment of the present invention includes at least one heating structure 16 and at least one temperature measurement structure 17, where the heating structure 16 and the phase shift unit 12 are arranged in a one-to-one correspondence, and the temperature measurement structure 17 and the phase shift unit 12 are arranged in a one-to-one correspondence.

As shown in fig. 4, each phase shift unit 12 is provided with a heating structure 16 and a temperature measuring structure 17, so that each phase shift unit 12 can be accurately measured and heated, and the temperature uniformity of the phase shifter can be improved.

With continued reference to fig. 18, optionally, the phase shifter provided in the embodiment of the present invention includes at least one heating structure 16 and at least one temperature measuring structure 17, where one heating structure 16 corresponds to at least two phase shifting units 12, and one temperature measuring structure 17 corresponds to at least two phase shifting units 12.

Specifically, as shown in fig. 18, one heating structure 16 is arranged to correspond to at least two phase shift units 12, and one temperature measuring structure 17 corresponds to at least two phase shift units 12, so as to perform temperature measurement and heating in a wider range, and reduce signal processing amount.

The number of the phase shift units 12 corresponding to each of the heating structures 16 and the temperature measuring structures 17 may be set according to actual requirements, which is not limited in the embodiment of the present invention.

It should be noted that the materials, the number, and the shapes of the heating structure 16, the temperature measuring structure 17, and other structures in the phase shifter may be set according to actual requirements, for example, the first substrate 10 and the second substrate 11 are glass substrates, and the embodiment of the invention is not limited thereto.

Based on the same inventive concept, an embodiment of the present invention further provides an antenna, where the antenna includes the phase shifter according to any embodiment of the present invention, and therefore, the antenna provided in the embodiment of the present invention has the technical effect of the technical solution in any embodiment, and the explanation of the structure and the terminology that are the same as or corresponding to those in the embodiment described above is not repeated herein.

Fig. 40 is a schematic structural diagram of an antenna according to an embodiment of the present invention, and fig. 41 is a schematic partial cross-sectional structural diagram of an antenna according to an embodiment of the present invention, as shown in fig. 40 and fig. 41, optionally, the antenna according to an embodiment of the present invention further includes a radiation electrode 28, the radiation electrode 28 is located on a side of the ground metal layer 15 away from the second substrate 11, and the ground metal layer 15 and the radiation electrode 28 are at least partially overlapped along a direction perpendicular to the second substrate 11. The ground metal layer 15 includes a first hollow portion 151, and the radiation electrode 28 covers the first hollow portion 151 along a direction perpendicular to the second substrate 11.

Specifically, as shown in fig. 40 and fig. 41, the ground metal layer 15 is provided with a first hollow-out portion 151, a vertical projection of the radiation electrode 28 on a plane where the ground metal layer 15 is located covers the first hollow-out portion 151, a radio frequency signal is transmitted between the microstrip line 13 and the ground metal layer 15, the liquid crystal layer 14 between the microstrip line 13 and the ground metal layer 15 shifts a phase of the radio frequency signal to change a phase of the radio frequency signal, and the radio frequency signal after the phase shift is coupled to the radiation electrode 28 at the first hollow-out portion 151 of the ground metal layer 15, so that the radiation electrode 28 radiates the signal outwards.

It should be noted that the radiation electrodes 28 are disposed corresponding to the phase shift units 12, for example, the radiation electrodes 28 are disposed corresponding to the phase shift units 12 one to one, and the radiation electrodes 28 corresponding to different phase shift units 12 are disposed in an insulated manner.

Fig. 42 is a schematic partial cross-sectional view of another antenna according to an embodiment of the present invention, as shown in fig. 42, optionally, the heating structure 16 includes a second heating structure 162, the second heating structure 162 is located on a side of the second substrate close to the ground metal layer 15, and a gap exists between a vertical projection of the second heating structure 162 on the first substrate 10 and a vertical projection of the radiation electrode 28 on the first substrate 10.

Specifically, as shown in fig. 42, the phase-shifted rf signal is coupled to the radiation electrode 28 at the first hollow portion 151 of the ground metal layer 15, and the radiation electrode 28 radiates the rf signal outwards, in this embodiment, a gap exists between a vertical projection of the second heating structure 162 on the first substrate 10 and a vertical projection of the radiation electrode 28 on the first substrate 10, that is, the vertical projection of the second heating structure 162 on the first substrate 10 and the vertical projection of the radiation electrode 28 on the first substrate 10 do not overlap, so that an influence of the second heating structure 162 on the rf signal on the radiation electrode 28 is reduced, and a performance of the phase shifter is ensured.

With continuing reference to fig. 41 and 42, optionally, the phase shifter further includes a temperature measurement structure 17, the temperature measurement structure 17 is located between the first substrate 10 and the second substrate 11, the temperature measurement structure 17 includes a second temperature measurement structure 174, the second temperature measurement structure 174 is located on a side of the second substrate 11 close to the grounded metal layer 15, and a gap exists between a vertical projection of the second temperature measurement structure 174 on the first substrate 10 and a vertical projection of the radiation electrode 28 on the first substrate 10.

Specifically, as shown in fig. 41 and 42, the phase-shifted rf signal is coupled to the radiation electrode 28 at the first hollow portion 151 of the ground metal layer 15, and the radiation electrode 28 radiates the rf signal outwards, in this embodiment, a gap exists between a vertical projection of the second temperature measurement structure 174 on the first substrate 10 and a vertical projection of the radiation electrode 28 on the first substrate 10, that is, the vertical projection of the second temperature measurement structure 174 on the first substrate 10 and the vertical projection of the radiation electrode 28 on the first substrate 10 are not overlapped, so that an influence of the second temperature measurement structure 174 on the rf signal on the radiation electrode 28 is reduced, and a performance of the phase shifter is ensured.

With continuing reference to fig. 41 and fig. 42, optionally, the antenna provided in the embodiment of the present invention further includes a feeding network 29, the feeding network 29 is located on a side of the second substrate 11 away from the microstrip line 13, the ground metal layer 15 includes a second hollow portion 152, and a vertical projection of the feeding network 29 on the first substrate 10 covers a vertical projection of the second hollow portion 152 on the first substrate 10.

As shown in fig. 41 and 42, the feeding network 29 is used for transmitting the rf signal to each phase shift unit 12, wherein the feeding network 29 may be distributed like a tree and includes a plurality of branches, and one branch provides the rf signal for one phase shift unit 12. Specifically, the feed network 29 is located on a side of the second substrate 11 away from the microstrip line 13, the ground metal layer 15 includes a second hollow portion 152, a vertical projection of the feed network 29 on a plane where the ground metal layer 15 is located covers the second hollow portion 152, a radio frequency signal transmitted by the feed network 29 is coupled to the microstrip line 13 at the second hollow portion 152 of the ground metal layer 15, and a deflection of liquid crystal molecules 141 in the liquid crystal layer 14 is controlled to change a dielectric constant of the liquid crystal layer 14, so that a phase shift of the radio frequency signal on the microstrip line 13 is realized.

Fig. 43 is a schematic partial cross-sectional structure diagram of another antenna provided in an embodiment of the present invention, as shown in fig. 43, optionally, the antenna provided in the embodiment of the present invention further includes a feed network 29, the feed network 29 and the microstrip line 13 are disposed on the same layer, and the feed network 29 is connected to the microstrip line 13.

As shown in fig. 43, the feed network 29 and the microstrip line 23 are disposed on the same layer, and the feed network 29 is directly electrically connected to the microstrip line 13, compared with the case that the radio frequency signal transmitted by the feed network 29 is coupled to the microstrip line 13 through the liquid crystal layer 14, the feed network 29 can directly transmit the radio frequency signal to the microstrip line 13 without coupling, thereby avoiding the problem of radio frequency signal loss caused by coupling, reducing the insertion loss of the antenna, and improving the performance of the antenna.

With continued reference to fig. 41-43, an antenna provided by embodiments of the present invention may optionally further include a radio frequency signal interface 30 and a bond pad 31. One end of the radio frequency signal interface 30 is connected to the feed network 29 and fixed by a pad 31, and the other end of the radio frequency signal interface 29 is used for connecting external circuits such as a high frequency connector.

It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious modifications, rearrangements, combinations and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A phase shifter, comprising:

the first substrate and the second substrate are oppositely arranged;

2. The phase shifter according to claim 1,

the phase shifter further comprises a temperature measurement structure, and the temperature measurement structure is located between the first substrate and the second substrate.

3. The phase shifter according to claim 1,

the heating structure comprises a first heating structure, and the first heating structure is positioned on one side of the first substrate close to the microstrip line.

4. The phase shifter according to claim 3,

the first heating structure and the microstrip line are arranged in different layers, and the vertical projection of the first heating structure on the first substrate is positioned in the vertical projection of the microstrip line on the first substrate;

the phase shifter further comprises a first insulating layer, and the first insulating layer is located on one side, close to the microstrip line, of the first heating structure.

5. The phase shifter according to claim 3,

a gap exists between the vertical projection of the first heating structure on the first substrate and the vertical projection of the microstrip line on the first substrate.

6. The phase shifter as recited in claim 5,

and along the direction vertical to the first substrate, the shortest distance between the boundary of the first heating structure close to one side of the microstrip line and the boundary of the microstrip line close to one side of the first heating structure is D1, the width of the microstrip line is D2, and D1 is not less than 5 × D2.

7. The phase shifter according to claim 1,

the heating structure comprises a second heating structure, and the second heating structure is positioned on one side of the second substrate close to the grounding metal layer.

8. The phase shifter according to claim 7,

the second heating structure and the grounding metal layer are arranged in different layers, and the vertical projection of the second heating structure on the first substrate is positioned in the vertical projection of the grounding metal layer on the first substrate;

the phase shifter further comprises a second insulating layer located on one side of the second heating structure close to the ground metal layer.

9. The phase shifter according to claim 1,

the heating structure comprises a conductor, the heating structure has a width W1, the heating structure has a length L1, and the heating structure has a thickness d1, wherein (W1 × d1)/L1 ═ P1 × ρ 1)/(U1²)；

P1 is the heating power of the heating structure, ρ 1 is the resistivity of the heating structure, and U1 is the voltage of the heating structure.

10. The phase shifter according to claim 9,

the material of the heating structure comprises any one of copper, platinum, ITO, nickel, molybdenum, aluminum and cadmium.

11. The phase shifter according to claim 2,

the temperature measuring structure comprises a conductor, the width of the temperature measuring structure is W2, the length of the temperature measuring structure is L2, and the thickness of the temperature measuring structure is d2, wherein L2/(W2 × d2) ═ ρ 2/R2;

ρ 2 is the resistivity of the temperature measuring structure, and R2 is the resistance of the temperature measuring structure.

12. The phase shifter as recited in claim 11,

the temperature measuring structure is made of any one of copper, platinum, ITO, nickel, molybdenum, aluminum and cadmium.

13. The phase shifter according to claim 2,

the temperature measuring structure comprises a first metal wire and a second metal wire which are connected with each other, wherein the first metal wire and the second metal wire are made of different materials.

14. The phase shifter as recited in claim 13,

the first metal wire and the second metal wire are arranged on the same layer.

15. The phase shifter as recited in claim 13,

the first metal line and the second metal line are located at different layers.

16. Phase shifter as in claim 12 or 13,

the temperature measuring structure comprises a first temperature measuring structure, and the first temperature measuring structure is positioned on one side of the first substrate close to the microstrip line.

17. The phase shifter as recited in claim 16,

the first temperature measuring structure and the microstrip line are arranged in different layers, and the vertical projection of the first temperature measuring structure on the first substrate is positioned in the vertical projection of the microstrip line on the first substrate;

the phase shifter further comprises a third insulating layer, and the third insulating layer is located on one side, close to the microstrip line, of the first temperature measuring structure.

18. The phase shifter as recited in claim 16,

a gap exists between the vertical projection of the first temperature measuring structure on the first substrate and the vertical projection of the microstrip line on the first substrate.

19. The phase shifter as recited in claim 18,

along the direction perpendicular to the first substrate, the shortest distance between the boundary of the first temperature measurement structure close to one side of the microstrip line and the boundary of the microstrip line close to one side of the first temperature measurement structure is D3, the width of the microstrip line is D2, and D3 is not less than 5 × D2.

20. Phase shifter as in claim 12 or 13,

the temperature measuring structure comprises a second temperature measuring structure, and the second temperature measuring structure is positioned on one side of the second substrate, which is close to the grounding metal layer.

21. The phase shifter of claim 20,

the second temperature measurement structure and the grounding metal layer are arranged in different layers, and the vertical projection of the second temperature measurement structure on the first substrate is positioned in the vertical projection of the grounding metal layer on the first substrate;

the phase shifter further comprises a fourth insulating layer, and the fourth insulating layer is located on one side, close to the grounding metal layer, of the second temperature measuring structure.

22. Phase shifter as in claim 12 or 13,

the heating structure and the temperature measuring structure are arranged on the same layer, and the heating structure and the temperature measuring structure are insulated.

23. The phase shifter as recited in claim 22,

the temperature measuring structures and the heating structures are alternately arranged along the direction parallel to the first substrate.

24. The phase shifter as recited in claim 22,

and the temperature measuring structure is arranged around the heating structure along the direction vertical to the first substrate, or the heating structure is arranged around the temperature measuring structure.

25. Phase shifter as in claim 12 or 13,

the heating structure and the temperature measuring structure share the same structure.

26. The phase shifter according to claim 2,

the heating structure and the temperature measuring structure are located on different layers.

27. The phase shifter according to claim 1,

the thickness of the microstrip line is larger than the skin depth.

28. The phase shifter according to claim 2,

the temperature measuring structure comprises a fiber grating sensor.

29. The phase shifter of claim 28,

the fiber grating sensor is located in the liquid crystal layer.

30. The phase shifter of claim 29,

a gap exists between the vertical projection of the fiber bragg grating sensor on the first substrate and the vertical projection of the microstrip line on the first substrate.

31. The phase shifter according to claim 2,

the phase shifter comprises at least one heating structure and at least one temperature measuring structure, the heating structures and the phase shifting units are arranged in a one-to-one correspondence mode, and the temperature measuring structures and the phase shifting units are arranged in a one-to-one correspondence mode.

32. The phase shifter according to claim 2,

the phase shifter comprises at least one heating structure and at least one temperature measuring structure, wherein one heating structure corresponds to at least two phase shifting units, and one temperature measuring structure corresponds to at least two phase shifting units.

33. An antenna comprising a phase shifter according to any one of claims 1 to 32.

34. The antenna of claim 33,

the antenna further comprises a radiation electrode, the radiation electrode is positioned on one side of the grounding metal layer far away from the second substrate, and the grounding metal layer and the radiation electrode are at least partially overlapped along the direction perpendicular to the second substrate;

the ground metal layer comprises a first hollow-out part, and the radiation electrode covers the first hollow-out part along a direction perpendicular to the second substrate.

35. The antenna of claim 34,

the heating structure comprises a second heating structure, and the second heating structure is positioned on one side of the second substrate close to the grounding metal layer;

a gap exists between a perpendicular projection of the second heating structure on the first substrate and a perpendicular projection of the radiation electrode on the first substrate.

36. The antenna of claim 34,

the phase shifter also comprises a temperature measurement structure, and the temperature measurement structure is positioned between the first substrate and the second substrate;

the temperature measuring structure comprises a second temperature measuring structure, and the second temperature measuring structure is positioned on one side of the second substrate close to the grounding metal layer;

a gap exists between the vertical projection of the second temperature measuring structure on the first substrate and the vertical projection of the radiation electrode on the first substrate.

37. The antenna of claim 33,

the antenna also comprises a feed network, and the feed network is positioned on one side of the second substrate, which is far away from the microstrip line;

the ground metal layer comprises a second hollowed-out part, and the vertical projection of the feed network on the first substrate covers the vertical projection of the second hollowed-out part on the first substrate.

38. The antenna of claim 33,

the antenna also comprises a feed network, wherein the feed network and the microstrip line are arranged on the same layer, and the feed network is connected with the microstrip line.