CN113652657B - Aluminum scandium alloy target material and manufacturing method adopting atmospheric high-temperature diffusion sintering molding - Google Patents

Aluminum scandium alloy target material and manufacturing method adopting atmospheric high-temperature diffusion sintering molding Download PDF

Info

Publication number
CN113652657B
CN113652657B CN202110981254.6A CN202110981254A CN113652657B CN 113652657 B CN113652657 B CN 113652657B CN 202110981254 A CN202110981254 A CN 202110981254A CN 113652657 B CN113652657 B CN 113652657B
Authority
CN
China
Prior art keywords
alloy target
aluminum scandium
scandium alloy
powder
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202110981254.6A
Other languages
Chinese (zh)
Other versions
CN113652657A (en
Inventor
王兴权
丁照崇
贾倩
曹晓萌
何金江
滕海涛
李勇军
张晓娜
冯昭伟
刘晓
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Grikin Advanced Material Co Ltd
Original Assignee
Grikin Advanced Material Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Grikin Advanced Material Co Ltd filed Critical Grikin Advanced Material Co Ltd
Priority to CN202110981254.6A priority Critical patent/CN113652657B/en
Publication of CN113652657A publication Critical patent/CN113652657A/en
Application granted granted Critical
Publication of CN113652657B publication Critical patent/CN113652657B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/23Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces involving a self-propagating high-temperature synthesis or reaction sintering step
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F5/00Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/04Making non-ferrous alloys by powder metallurgy
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/04Making non-ferrous alloys by powder metallurgy
    • C22C1/0408Light metal alloys
    • C22C1/0416Aluminium-based alloys
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C21/00Alloys based on aluminium
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C28/00Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P10/00Technologies related to metal processing
    • Y02P10/25Process efficiency

Abstract

The invention provides a manufacturing method of aluminum scandium alloy target atmospheric high-temperature diffusion sintering, which adopts spherical powder raw materials and optimizes the grading of powder granularity, thereby improving the initial apparent density of mixed powder and reducing the gap volume of powder particles; then the powder is filled into a sealed elastic sheath and then subjected to vacuum pumping and ultrahigh pressure cold isostatic pressing, so that the compactness of the formed aluminum scandium biscuit can reach more than 95 percent, which is equivalent to the formation of a layer of sheath skin without penetrating air holes on the surface of the biscuit, the biscuit can be subjected to high-temperature diffusion sintering in an atmosphere sintering furnace without vacuum or inert gas protection, the requirement on equipment performance is greatly reduced, and the process is simple and suitable for large-size and mass production.

Description

Aluminum scandium alloy target material and manufacturing method adopting atmospheric high-temperature diffusion sintering molding
Technical Field
The invention relates to the technical field of manufacturing of magnetron sputtering targets, in particular to an atmosphere high-temperature diffusion sintering molding manufacturing method of an aluminum scandium alloy target.
Background
The aluminum-nitrogen-scandium thin film manufactured by reactive sputtering aluminum-scandium alloy target deposition has excellent piezoelectric performance and is widely applied to the fields of micro-electro-mechanical systems (MEMS), radio frequency filters and the like. As the scandium content increased, the piezoelectric constant (d 33 ) Coefficient of electromechanical coupling (kt) 2 ) The piezoelectric performance of the film is more excellent in a linear increase. The aluminum scandium alloy target is usually formed by adopting a smelting process and a powder metallurgy process. The smelting process is relatively simple, but because of the large difference of melting points of aluminum and scandium, the solid solubility of scandium in aluminum is low, the scandium vapor pressure is high, and as the scandium content in the alloy increases, the solid-liquid solidification interval increases, and an intermediate compound phase (Al) is gradually generated 3 Sc、Al 2 Sc、AlSc、AlSc 2 ) The alloy nominal components of the cast ingot are easy to be controlled, the alloy components segregate, the grains are coarse, and the like, so that the subsequent coating components and thickness uniformity are not facilitated. Further, since the brittle intermediate compound phase content in the target material with a high scandium content is large, the ingot plasticity is poor, and it is difficult to perform rolling deformation such as subsequent forging and rolling, and it is difficult to obtain a large-sized aluminum scandium alloy target material, particularly when the scandium content exceeds 20 wt%. In addition, scandium metal has strong activity and is easy to react with a conventional ceramic crucible, so that a water-cooled copper crucible with high cost and high power consumption is generally needed to avoid impurity pollution. The powder metallurgy process can avoid the problems of segregation of alloy components, coarse grains and the like in the smelting process, and can be formed in a large size. The hot-press or hot isostatic pressing sintering molding is commonly used, but special vacuum or inert gas protection sintering equipment is needed, a hot-press molding die is easy to damage, a metal package used for hot isostatic pressing is disposable, the target material molding cost is high, and the productivity is low.
Disclosure of Invention
The invention aims to provide a brand-new manufacturing method of atmospheric high-temperature diffusion sintering molding of aluminum scandium alloy target material, which adopts spherical powder raw materials and optimizes the grading of powder granularity, thereby improving the initial apparent density of mixed powder and reducing the gap volume of powder particles; then the powder is filled into a sealed elastic sheath and then subjected to vacuum pumping and ultrahigh pressure cold isostatic pressing, so that the compactness of the formed aluminum scandium biscuit can reach more than 95 percent, which is equivalent to the formation of a layer of sheath skin without penetrating air holes on the surface of the biscuit, the biscuit can be subjected to high-temperature diffusion sintering in an atmosphere sintering furnace without vacuum or inert gas protection, the requirement on equipment performance is greatly reduced, and the process is simple and suitable for large-size and mass production. On the other hand, because the powder is subjected to high vacuum exhaust treatment before cold isostatic pressing treatment, the inside of the biscuit is a closed gap and is approximately vacuum, so that the increment of gas impurities in the aluminum scandium alloy target is extremely low, the high purity of the aluminum scandium target is realized, the densification moving resistance among particles in the diffusion sintering process is low, and the high-density molding of the aluminum scandium target is facilitated.
In order to solve the technical problems, the invention provides a manufacturing method for atmospheric high-temperature diffusion sintering molding of an aluminum scandium alloy target, which comprises the following steps:
firstly, selecting spherical Al metal powder and Sc metal powder with optimized grain size grading as raw materials, and carrying out batching and uniform mixing according to target alloy components;
step two, filling the mixed powder obtained in the step one into a closed elastic sheath, and performing cold isostatic pressing to obtain an aluminum scandium biscuit;
thirdly, placing the aluminum scandium biscuit into an atmosphere sintering furnace for diffusion sintering to obtain an aluminum scandium alloy target blank;
and fourthly, machining the aluminum scandium alloy target blank obtained in the third step, and welding the aluminum scandium alloy target blank with a backboard to obtain a finished product of the aluminum scandium alloy target material.
The particle size distribution of the spherical powder in the first step is as follows: d10 is 5-10 μm, D50 is 40-80 μm, and D90 is 100-150 μm.
The bulk density of the powder in the second step is more than 50%.
The third step is that the elastic sheath is vacuumized to be smaller than 1.3 x 10 -4 Pa, the pressure of static pressure forming is preferably 500-700 MPa, the dwell time is preferably 5-10 min, and the density of the obtained aluminum scandium alloy target blank is more than 95%.
In the fourth step, the diffusion sintering temperature is preferably 500-630 ℃, the diffusion sintering time is preferably 6-12 hours, and the density of the obtained aluminum scandium alloy target blank is more than 99%.
The scandium mass content in the aluminum scandium alloy target material is preferably 5-55wt%.
The beneficial effects of the invention are that
1. The invention discloses an atmospheric high-temperature diffusion sintering molding manufacturing method of an aluminum scandium alloy target, which adopts spherical powder raw materials and optimizes the grading of the granularity of the powder, thereby improving the bulk density of mixed powder, reducing the gap volume of the powder particles, and vacuumizing after the powder is filled into a closed elastic sheath to be better than 1.3 x 10 -4 Pa, the density of aluminum scandium biscuit with more than 95% obtained by cold isostatic pressing, wherein the inside of the biscuit is a closed gap and is approximately vacuum, on the one hand, in the subsequent diffusion sintering process, equipment does not need vacuum or inert gas protection, the surface of the blank does not need metal sheath isolation, the extremely low increment of gas impurities in the aluminum scandium alloy target can be achieved, and gas impurities in a sintering furnace cannot permeate into the target blank, so that the high purity of the aluminum scandium target is realized; on the other hand, the closed gaps in the biscuit are approximately vacuum, and the inter-particle densification moving resistance in the diffusion sintering process is low, so that the high-densification forming of the aluminum scandium target material is facilitated.
2. According to the atmospheric high-temperature diffusion sintering molding manufacturing method of the aluminum scandium alloy target, the biscuit is molded at room temperature, the high-temperature diffusion sintering temperature is lower than the melting point of aluminum, and the raw materials do not flow and burn and volatilize in the whole target molding process, so that the uniformity of components of the aluminum scandium alloy target and the accuracy of components of the alloy are ensured. In addition, the conventional cold isostatic pressing furnace and the atmospheric sintering furnace are adopted, the process is simple and controllable, and the high-efficiency production with large size and large batch is easy, and the cost is low.
Drawings
FIG. 1 is a flow chart of a method for manufacturing an aluminum scandium alloy target according to the present invention.
Detailed Description
The invention provides a manufacturing method for atmospheric high-temperature diffusion sintering molding of an aluminum scandium alloy target, which comprises the following steps:
firstly, selecting spherical Al metal powder and Sc metal powder with optimized grain size grading as raw materials, and carrying out batching and uniform mixing according to target alloy components;
step two, filling the mixed powder obtained in the step one into a closed elastic sheath, and performing cold isostatic pressing to obtain an aluminum scandium biscuit;
thirdly, placing the aluminum scandium biscuit into an atmosphere sintering furnace for diffusion sintering to obtain an aluminum scandium alloy target blank;
and fourthly, machining the aluminum scandium alloy target blank obtained in the third step, and welding the aluminum scandium alloy target blank with a backboard to obtain a finished product of the aluminum scandium alloy target material.
The particle size distribution of the spherical powder in the first step is as follows: d10 is 5-10 μm, D50 is 40-80 μm, and D90 is 100-150 μm. With this particle size distribution it is possible to achieve filling of the large ball powder interstices with small ball powder to increase the bulk density, which would not be too high if the particle size was too fine or too coarse.
The bulk density of the powder in the second step is more than 50%.
The third step is that the elastic sheath is vacuumized to be smaller than 1.3 x 10 -4 Pa, the pressure of static pressure forming is preferably 500-700 MPa, the dwell time is preferably 5-10 min, and the density of the obtained aluminum scandium alloy target blank is more than 95%.
In the fourth step, the diffusion sintering temperature is preferably 500-630 ℃, the diffusion sintering time is preferably 6-12 hours, and the density of the obtained aluminum scandium alloy target blank is more than 99%.
The scandium mass content in the aluminum scandium alloy target material is preferably 5-55wt%.
The following examples are used to describe embodiments of the present invention in detail, so that the technical means can be applied to the present invention to solve the technical problems, and the implementation process for achieving the technical effects can be fully understood and implemented accordingly.
1. Mixing ingredients
According to the nominal aluminum scandium alloy target material composition designed in the embodiment, raw material proportioning and mixing are carried out:
the raw materials are spherical Al metal powder and Sc metal powder, and the particle size distribution of the powder is as follows: d10 is 5-10 μm, D50 is 40-80 μm, and D90 is 100-150 μm. Mixing the initial powder uniformly by adopting V-shaped double-cone powder mixing machines to obtain mixed powder, wherein the scandium mass content is 5-55wt%, and the bulk density of the mixed powder is more than 50%.
2. Cold isostatic pressing
Filling the mixed powder into a sealed elastic sheath, and vacuumizing the elastic sheath by adopting an oil diffusion pump or a molecular pump to be better than 1.3 x 10 -4 Pa, then carrying out cold isostatic compaction on the powder along with an elastic sheath, wherein the pressure is 500-700 MPa, and the pressure maintaining time is 5-10 min. And removing the elastic sheath to obtain the aluminum scandium biscuit with the density of more than 95%.
3. High temperature diffusion sintering
And (3) placing the aluminum scandium alloy blank in an atmosphere thermal sintering furnace for diffusion sintering, wherein the diffusion sintering temperature is 500-630 ℃, and the diffusion sintering time is 6-12 hours, so that the aluminum scandium alloy target blank with the density of more than 99% is obtained.
4. Machining welding
And (3) machining the aluminum-scandium alloy target blank, and welding the aluminum-scandium alloy target blank with the backboard to obtain the finished product aluminum-scandium alloy target.
The main manufacturing processes and the performance results of the aluminum scandium alloy targets of examples 1 to 10 and comparative examples 1 to 6 are shown in Table 1.
TABLE 1 aluminium scandium alloy target manufacturing process and performance results
It can be seen from the examples and comparative examples in Table 1 that when the powder size fraction is not sufficiently optimized, the bulk density of the mixed powder is less than 50%, as in comparative examples 1 to 6; or the vacuum degree difference of the sheath is less than 1.3 x 10 -4 Pa, such as comparative examples 1, 2, 5 and 6, causes excessive gap volume of powder particles and excessive residual gas among gaps, thereby reducing aluminum scandium biscuit and final sintering density, and being difficult to reach more than 99%.
By adopting spherical powder raw materials and carrying out optimized grading on the powder granularity, the initial loose packing density of the mixed powder is improved, and the gap volume of powder particles is reduced; then the powder is filled into a sealed elastic sheath and then is subjected to vacuum pumping and ultrahigh pressure cold isostatic pressing, so that the compactness of the formed aluminum scandium biscuit can reach more than 95 percent, which is equivalent to the formation of a layer of sheath skin without penetrating air holes on the surface of the biscuit, and the biscuit can be subjected to high-temperature diffusion sintering in an atmosphere sintering furnace without vacuum or inert gas protection.
All of the above-described primary implementations of this intellectual property are not intended to limit other forms of implementing this new product and/or new method. Those skilled in the art will utilize this important information and the above modifications to achieve a similar implementation. However, all modifications or adaptations belong to the reserved rights based on the new products of the invention.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the invention in any way, and any person skilled in the art may make modifications or alterations to the disclosed technical content to the equivalent embodiments. However, any simple modification, equivalent variation and variation of the above embodiments according to the technical substance of the present invention still fall within the protection scope of the technical solution of the present invention.

Claims (5)

1. The method for manufacturing the aluminum scandium alloy target material by high-temperature diffusion sintering and forming in the atmosphere is characterized by comprising the following steps of:
firstly, selecting spherical Al metal powder and Sc metal powder with optimized grain size distribution as raw materials, and carrying out batching and uniform mixing according to target alloy components, wherein the grain size distribution of the spherical powder in the first step is as follows: d10 is 5-10 mu m, D50 is 40-80 mu m, D90 is 100-150 mu m, and the loose powder density is more than 50%;
the second step, the mixed powder obtained in the first step is filled into a sealed elastic sheath, and the vacuum of the elastic sheath is superior to that of the elastic sheath with the pressure of 1.3 multiplied by 10 -4 Pa, cold isostatic compaction, wherein the static compaction pressure is 500-700 MPa, the dwell time is 5-10 min, and the aluminum scandium biscuit with the density of more than 95% is obtained;
thirdly, placing the aluminum scandium biscuit into an atmosphere sintering furnace for diffusion sintering to obtain an aluminum scandium alloy target blank;
and fourthly, machining the aluminum scandium alloy target blank obtained in the third step, and welding the aluminum scandium alloy target blank with a backboard to obtain a finished product of the aluminum scandium alloy target material.
2. The method for manufacturing the aluminum scandium alloy target material by high-temperature diffusion sintering and forming in the atmosphere is characterized in that: the diffusion sintering temperature in the third step is 500-630 ℃, and the diffusion sintering time is 6-12 hours.
3. The method for manufacturing the aluminum scandium alloy target material by atmospheric high temperature diffusion sintering according to claim 1 or 2, which is characterized in that: and the compactness of the aluminum scandium alloy target blank obtained in the third step is more than 99%.
4. An aluminum scandium alloy target manufactured by the manufacturing method according to any one of claims 1 to 3.
5. The aluminum scandium alloy target according to claim 4, wherein: scandium content is 5-55wt%.
CN202110981254.6A 2021-08-25 2021-08-25 Aluminum scandium alloy target material and manufacturing method adopting atmospheric high-temperature diffusion sintering molding Active CN113652657B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110981254.6A CN113652657B (en) 2021-08-25 2021-08-25 Aluminum scandium alloy target material and manufacturing method adopting atmospheric high-temperature diffusion sintering molding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110981254.6A CN113652657B (en) 2021-08-25 2021-08-25 Aluminum scandium alloy target material and manufacturing method adopting atmospheric high-temperature diffusion sintering molding

Publications (2)

Publication Number Publication Date
CN113652657A CN113652657A (en) 2021-11-16
CN113652657B true CN113652657B (en) 2023-10-10

Family

ID=78481998

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110981254.6A Active CN113652657B (en) 2021-08-25 2021-08-25 Aluminum scandium alloy target material and manufacturing method adopting atmospheric high-temperature diffusion sintering molding

Country Status (1)

Country Link
CN (1) CN113652657B (en)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009235541A (en) * 2008-03-28 2009-10-15 Hitachi Metals Ltd Method for producing zinc oxide based sintered target
CN102770392A (en) * 2010-01-15 2012-11-07 株式会社爱发科 Method for manufacturing sintered LiCoO2, and sputtering target
CN103567444A (en) * 2012-07-25 2014-02-12 宁波江丰电子材料有限公司 Tungsten target manufacturing method
CN104694895A (en) * 2013-12-05 2015-06-10 有研亿金新材料股份有限公司 W-Ti alloy target material and manufacturing method thereof
CN107841643A (en) * 2017-12-11 2018-03-27 基迈克材料科技(苏州)有限公司 Aluminium-scandium alloy target blankss and preparation method and application
CN108441827A (en) * 2018-04-17 2018-08-24 长沙迅洋新材料科技有限公司 Aluminium-scandium alloy target preparation method
CN111636054A (en) * 2020-06-08 2020-09-08 福建阿石创新材料股份有限公司 Preparation method of aluminum-scandium alloy sputtering target material
CN112030120A (en) * 2020-08-31 2020-12-04 宁波江丰电子材料股份有限公司 Preparation method of tantalum-silicon alloy sputtering target material
CN112410737A (en) * 2020-11-17 2021-02-26 昆山全亚冠环保科技有限公司 Preparation method of silicon tube sputtering target material

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009235541A (en) * 2008-03-28 2009-10-15 Hitachi Metals Ltd Method for producing zinc oxide based sintered target
CN102770392A (en) * 2010-01-15 2012-11-07 株式会社爱发科 Method for manufacturing sintered LiCoO2, and sputtering target
CN103567444A (en) * 2012-07-25 2014-02-12 宁波江丰电子材料有限公司 Tungsten target manufacturing method
CN104694895A (en) * 2013-12-05 2015-06-10 有研亿金新材料股份有限公司 W-Ti alloy target material and manufacturing method thereof
CN107841643A (en) * 2017-12-11 2018-03-27 基迈克材料科技(苏州)有限公司 Aluminium-scandium alloy target blankss and preparation method and application
CN108441827A (en) * 2018-04-17 2018-08-24 长沙迅洋新材料科技有限公司 Aluminium-scandium alloy target preparation method
CN111636054A (en) * 2020-06-08 2020-09-08 福建阿石创新材料股份有限公司 Preparation method of aluminum-scandium alloy sputtering target material
CN112030120A (en) * 2020-08-31 2020-12-04 宁波江丰电子材料股份有限公司 Preparation method of tantalum-silicon alloy sputtering target material
CN112410737A (en) * 2020-11-17 2021-02-26 昆山全亚冠环保科技有限公司 Preparation method of silicon tube sputtering target material

Also Published As

Publication number Publication date
CN113652657A (en) 2021-11-16

Similar Documents

Publication Publication Date Title
KR100689597B1 (en) Iron silicide sputtering target and method for production thereof
CN110983264B (en) Preparation method of high-density fine-grain easily-formed W target
EP2420590A1 (en) Cu-Ga ALLOY SPUTTERING TARGET AND PROCESS FOR MANUFACTURE THEREOF
CN111471970A (en) Low-oxygen molybdenum-niobium alloy target material and preparation method thereof
JP3819863B2 (en) Silicon sintered body and manufacturing method thereof
CN112111719B (en) Tungsten titanium silicon alloy sputtering target material and preparation method thereof
TWI669283B (en) Oxide sintered body and sputtering target material and their manufacturing method
EP2666884A1 (en) Cu-ga target and method for manufacturing same, as well as light-absorbing layer formed from cu-ga alloy film, and cigs solar cell using light-absorbing layer
CN113652657B (en) Aluminum scandium alloy target material and manufacturing method adopting atmospheric high-temperature diffusion sintering molding
WO2023051514A1 (en) Aluminum-scandium alloy target material with high scandium content and manufacturing method therefor
CN115255367B (en) Nickel-aluminum alloy sputtering target material and hot pressing preparation method thereof
CN112708864B (en) Manufacturing method of aluminum-scandium alloy target
US20180021857A1 (en) Method of preparing tungsten metal material and tungsten target with high purity
CN105177513A (en) Method for preparation of high performance tantalum target material by powder metallurgical process
WO2014148424A1 (en) Ti-Al ALLOY SPUTTERING TARGET
CN113981387A (en) Preparation method of tungsten-silicon target material
JP4354721B2 (en) Method for producing silicon sintered body
CN104928539A (en) Vanadium-aluminium-silicon ternary alloy target material and preparation method thereof
JP2896233B2 (en) Refractory metal silicide target, manufacturing method thereof, refractory metal silicide thin film, and semiconductor device
CN114855132B (en) Tantalum-titanium alloy target material and preparation method and application thereof
JP7203064B2 (en) sputtering target
JP7203065B2 (en) sputtering target
WO2021241522A1 (en) METAL-Si BASED POWDER, METHOD FOR PRODUCING SAME, METAL-Si BASED SINTERED BODY, SPUTTERING TARGET, AND METAL-Si BASED THIN FILM MANUFACTURING METHOD
CN115537746A (en) Aluminum-scandium alloy target material and preparation method and application thereof
JP2022044768A (en) Sputtering target

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant