CN113643965A - Mask, method of manufacturing mask, and method of manufacturing display device using mask - Google Patents

Mask, method of manufacturing mask, and method of manufacturing display device using mask Download PDF

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Publication number
CN113643965A
CN113643965A CN202011441701.0A CN202011441701A CN113643965A CN 113643965 A CN113643965 A CN 113643965A CN 202011441701 A CN202011441701 A CN 202011441701A CN 113643965 A CN113643965 A CN 113643965A
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China
Prior art keywords
mask
shielding
opening
region
deposition
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Pending
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CN202011441701.0A
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Chinese (zh)
Inventor
金桢国
金辉
李雅凛
朴相河
宋昇勇
黄圭焕
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Samsung Display Co Ltd
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Samsung Display Co Ltd
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Application filed by Samsung Display Co Ltd filed Critical Samsung Display Co Ltd
Publication of CN113643965A publication Critical patent/CN113643965A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0338—Process specially adapted to improve the resolution of the mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Inorganic Chemistry (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The invention discloses a mask, a method for manufacturing the mask and a method for manufacturing a display device using the mask, wherein the mask comprises: a first opening portion; a first shielding part surrounding the first opening part; a second shielding portion arranged between the first opening portion and the first shielding portion and including a plurality of slits extending from the first opening portion toward the first shielding portion; and a third shielding portion arranged between the first opening portion and the second shielding portion and connected to the slit.

Description

Mask, method of manufacturing mask, and method of manufacturing display device using mask
Technical Field
The present invention relates to a mask, a method of manufacturing the mask, and a method of manufacturing a display device using the mask.
Background
The display device may include a plurality of pixels, and each of the pixels may include an anode electrode, a light emitting layer disposed on the anode electrode, and a cathode electrode disposed on the light emitting layer. In this case, the cathode electrode may be implemented as a whole plate electrode. For example, the cathode electrode may be integrally formed on the light emitting layer. In general, the display device may have a rectangular parallelepiped shape. In order to display an image not only at the front and corner portions of the display device but also at curved corner portions, it is necessary to form the pixels also at the corner portions. Accordingly, a first process of forming the cathode electrode at the front face portion and the corner portion and a second process of forming the cathode electrode at the corner portion following the first process are performed. However, as the cathode electrode as a common layer is formed separately into the first process and the second process, masks for the first process and the second process, respectively, are required, and the productivity of the process is lowered.
Disclosure of Invention
An object of the present invention is to provide a mask capable of improving the productivity of the process.
It is another object of the present invention to provide a method of manufacturing the mask.
It is still another object of the present invention to provide a method of manufacturing a display device using the mask.
However, the object of the present invention is not limited to the above-described object, and various extensions may be made without departing from the spirit and scope of the present invention.
To achieve an object of the present invention described above, a mask according to an embodiment of the present invention may include: a first opening portion; a first shielding part surrounding the first opening part; a second shielding portion arranged between the first opening portion and the first shielding portion and including a plurality of slits extending from the first opening portion toward the first shielding portion; and a third shielding portion arranged between the first opening portion and the second shielding portion and connected to the slit.
According to an embodiment, a thickness of the third shielding part may be less than a thickness of the second shielding part.
According to an embodiment, an upper surface of the third shielding part may be located at the same height as an upper surface of the second shielding part.
According to an embodiment, a thickness of the third shielding part may be smaller than a width of the third shielding part.
According to an embodiment, the third shielding portion may be in the shape of a circular arc on a plane.
According to an embodiment, each of the plurality of slits may be trapezoidal in shape in plan.
According to an embodiment, the plurality of slits may be spaced apart from each other.
According to an embodiment, the first opening portion may have a rectangular shape with a corner being a circular arc, and the second shielding portion may be disposed between the corner of the first opening portion and the first shielding portion.
According to an embodiment, may further include: a second opening portion disposed between a side surface of the first opening portion and the first shielding portion.
To achieve another object of the present invention described above, a method of manufacturing a mask according to an embodiment of the present invention may include the steps of: preparing a base layer defining a first open region, a first mask region surrounding the first open region, a second mask region disposed between the first open region and the first mask region, and a third mask region disposed between the first open region and the second mask region; removing a portion of the base layer in an area overlapping the third masked area to form a third masked portion; removing a region of the base layer overlapping the first opening region to form a first opening portion; and forming a second shielding part including a plurality of slits extending from the first opening region toward the first shielding region in a region of the base layer overlapping the second shielding region.
According to an embodiment, in the step of forming the third shield portion, a portion of a lower portion of the region of the base layer overlapping with the third shield region may be removed.
According to an embodiment, an upper surface of the third shielding part may be located at the same height as an upper surface of the second shielding part.
According to an embodiment, a thickness of the third shielding part may be smaller than a width of the third shielding part.
According to an embodiment, the third shielding portion may be in the shape of a circular arc on a plane.
According to an embodiment, each of the plurality of slits may be trapezoidal in shape in plan.
According to an embodiment, the plurality of slits may be spaced apart from each other.
According to an embodiment, the first opening portion may have a rectangular shape with a corner being a circular arc, and the second shielding portion may be disposed between the corner of the first opening portion and a first shielding portion corresponding to the first shielding region.
According to an embodiment, the method may further include the steps of: a second opening is formed between a side surface of the first opening and the first shielding portion.
To achieve another object of the present invention described above, a method of manufacturing a display device using a mask according to an embodiment of the present invention may include the steps of: arranging a deposition object substrate to face a deposition source with a mask interposed therebetween; emitting a deposition substance from the deposition source; and forming a deposition substance pattern on the deposition object substrate, wherein the mask may include: a first opening portion; a first shielding part surrounding the first opening part; a second shielding portion arranged between the first opening portion and the first shielding portion and including a plurality of slits extending from the first opening portion toward the first shielding portion; and a third shielding portion arranged between the first opening portion and the second shielding portion and connected to the slit.
According to an embodiment, the mask may further include: a second opening portion disposed between a side surface of the first opening portion and the first shielding portion, wherein the deposition object substrate may include: a planar portion arranged corresponding to the first opening; a first curved portion arranged corresponding to the second opening portion; and a second curved portion arranged corresponding to the second shielding portion, wherein the deposition substance pattern may be simultaneously formed on the planar portion, the first curved portion, and the second curved portion.
According to an embodiment, a thickness of a region of the deposition substance pattern overlapping the third shielding part may be less than a thickness of a region of the deposition substance pattern overlapping the first opening part.
A mask according to an embodiment of the present invention may include: a first opening portion; a second shielding part including a plurality of slits; a third shielding portion disposed between the first opening portion and the second shielding portion. The third shielding portion may be connected with the slit so that the third shielding portion may maintain the shape of the slit. The third shielding part may have a thickness thinner than the first shielding part and the second shielding part, so that the deposition material pattern disposed on the deposition target substrate may be simultaneously formed.
However, the effects of the present invention are not limited to the effects described above, and various extensions may be made without departing from the spirit and scope of the present invention.
Drawings
Fig. 1 is a diagram for explaining an example of forming a deposition substance pattern on a deposition object substrate using a mask according to an embodiment of the present invention.
Fig. 2 is a plan view for explaining a mask according to an embodiment of the present invention.
Fig. 3 is an enlarged view of a region a of fig. 2.
Fig. 4 is a sectional view taken along line I-I' of fig. 2.
Fig. 5 to 8 are a plan view and a sectional view for explaining a method of manufacturing the mask of fig. 2.
Fig. 9 is a perspective view illustrating a state in which a display device manufactured using the mask of fig. 2 is bent.
Fig. 10 is a sectional view showing a state in which the display device of fig. 9 is bent.
Fig. 11 is a plan view illustrating a state in which a deposition object substrate included in the display apparatus of fig. 9 is unfolded.
Fig. 12 is an enlarged view of the region B of fig. 11.
Fig. 13 and 14 are cross-sectional views for explaining a method of forming a deposition substance pattern on a deposition target substrate using a mask.
Description of reference numerals:
100: mask 200: deposition target substrate
300: the deposition source 110: a first opening part
120: second opening 130: a first shielding part
140: second shielding portion 150: third shielding part
140 a: the slit 100': base layer
DM: deposition substance DMP: pattern of deposited material
1300 a: display block 1300 b: opening of the container
1000: the display device 10: front face
20: corner portion 30: corner segment
Detailed Description
Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. The same reference numerals will be used for the same constituent elements on the drawings, and a repetitive description thereof will be omitted.
Fig. 1 is a diagram for explaining an example of forming a deposition substance pattern on a deposition target substrate using a mask according to an embodiment of the present invention.
Referring to fig. 1, a deposition substance pattern DMP may be formed on one side of a deposition object substrate 200. Specifically, a deposition source 300 emitting a deposition substance DM and a mask 100 selectively passing the deposition substance DM may be disposed inside the chamber CB, and the deposition object substrate 200 may be arranged to face the deposition source 300 with the mask 100 interposed therebetween.
The mask 100 may include at least one opening portion and at least one shielding portion. For example, the mask 100 may be formed by processing a base layer, a portion of the base layer that penetrates through the opening may be defined as the opening, and a portion of the base layer that remains may be defined as a shielding portion.
In one embodiment, the deposition target substrate 200 may be included in a display device (e.g., the display device 1000 of fig. 9 and 10). The deposition target substrate 200 may be transferred to the inside of the cavity CB by a transfer portion, and may be arranged by an alignment key formed on the deposition target substrate 200.
The deposition source 300 may vaporize the deposition material DM. For example, the deposition source 300 may be a deposition source for forming a metal film for a cathode electrode. In this case, the deposition substance DM may be a metal, an alloy, or the like for forming a metal film for a cathode electrode. For example, the deposition substance DM may include silver (Ag), an alloy containing silver, molybdenum (Mo), an alloy containing molybdenum, aluminum (Al), an alloy containing aluminum, aluminum nitride (AlN), tungsten (W), tungsten nitride (WN), copper (Cu), nickel (Ni), chromium (Cr), chromium nitride (CrN), titanium (Ti), tantalum (Ta), platinum (Pt), scandium (Sc), Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), and the like. The deposition source 300 may heat the deposition material DM using a heater, the heated deposition material DM may be vaporized, and the vaporized deposition material DM may be condensed on the deposition target substrate 200 to form a metal film.
Fig. 2 is a plan view for explaining a mask according to an embodiment of the present invention, fig. 3 is an enlarged view of a region a of fig. 2, and fig. 4 is a sectional view taken along line I-I' of fig. 2.
Referring to fig. 2 and 3, the mask 100 may include a first opening 110, a second opening 120, a first shielding portion 130, a second shielding portion 140, and a third shielding portion 150.
The first opening portion 110 may be disposed at a central region of the mask 100. In one embodiment, the first opening portion 110 may have a rectangular shape with rounded corners. Accordingly, the first opening portion 110 may have at least one side surface 110a and at least one corner 110 b. For example, the first opening 110 may have 4 side surfaces 110a and 4 corners 110 b. The first opening 110 is penetrated and allows the deposition material DM to pass therethrough.
The second opening portion 120 may be adjacent to the side surface 110a of the first opening portion 110. For example, the mask 100 may include 4 second opening parts 120 respectively adjacent to the 4 side surfaces 110a of the first opening part 110. The second opening 120 is penetrated and allows the deposition material DM to pass therethrough.
The first shielding part 130 may be disposed to surround the first opening part 110 and the second opening part 120 on a plane. In one embodiment, the first shielding part 130 may have a rectangular shape with right-angled corners. The first shielding part 130 may be disposed at an outermost periphery of the mask 100 to maintain the shape of the mask 100. The first shielding part 130 is not penetrated and may not pass the deposition material DM.
The second shielding part 140 may be disposed between the corner 110b of the first opening part 110 and the first shielding part 130. For example, the mask 100 may include 4 second shielding parts 140 adjacent to 4 corners 110b of the first opening part 110.
In one embodiment, the second shielding part 140 may include a plurality of slits 140 a. The slit 140a may extend from the first opening portion 110 toward the first shielding portion 130. Accordingly, each of the slits 140a may be trapezoidal in shape on a plane.
Also, in one embodiment, the slits 140a may be spaced apart from each other. Accordingly, a plurality of openings 140b may be defined between the plurality of slits 140 a. The slit 140a is not penetrated and may not pass the deposition material DM, and the opening 140b is penetrated and may pass the deposition material DM.
The third shielding part 150 may be disposed between the corner 110b of the first opening part 110 and the second shielding part 140. For example, the mask 100 may include 4 third shielding parts 150 adjacent to 4 corners 110b of the first opening part 110.
In one embodiment, the third shielding part 150 may be connected to the slit 140 a. For example, one end portion of each of the slits 140a may be connected to the first shielding part 130, and the other end portion of each of the slits 140a may be connected to the third shielding part 150. The third shielding part 150 connects the other end of each of the slits 140a, so that the shape of the slits 140a can be maintained. For this, the third shielding portion 150 may have a circular arc shape on a plane. For example, the third shielding part 150 may have the same shape as the corner 110b of the first opening part 110.
Referring to fig. 2, 3 and 4, a thickness 150D of the third shielding portion 150 may be smaller than a thickness 140D of the second shielding portion 140. Here, the thickness 140D of the second shielding part 140 may mean a thickness of each of the slits 140a and may mean a thickness of each of the openings 140 b. For example, the mask 100 may include an upper surface and a lower surface opposite the upper surface. The upper surface of the mask 100 may face the deposition source 300, and the lower surface of the mask 100 may face the deposition target substrate 200. In this case, the upper surface 150T of the third shielding part 150 may be located at the same height as the upper surface 140T of the second shielding part 140. In contrast, the lower surface 150B of the third shielding part 150 may be located at a higher height than the lower surface 140B of the second shielding part 140. Accordingly, the third shielding part 150 may have a thickness thinner than the first shielding part 130 and the second shielding part 140. Accordingly, the deposition material DM may reach the deposition target substrate 200 overlapped with the third shield part 150. The thickness 150D of the third shielding part 150 may be smaller than the width 150W of the third shielding part 150. The thickness 150D of the third shield part 150 is adjusted corresponding to the width 150W so that the deposition material DM can reach the deposition target substrate 200 overlapped with the third shield part 150.
Fig. 5 to 8 are a plan view and a sectional view for explaining a method of manufacturing the mask of fig. 2.
Referring to fig. 2 and 5, in order to manufacture the mask 100, a base layer 100 'defining a first open region 110', a second open region 120', a first mask region 130', a second mask region 140', and a third mask region 150' may be prepared. For example, the second opening region 120' may be adjacent to the side 110' a of the first opening region 110 '. The first shield region 130 'may surround the first opening region 110'. The second masked area 140 'may be arranged between the corner 110' b of the first opened area 110 'and the first masked area 130'. The third shielding region 150 'may be disposed between the corner 110' b of the first opening region 110 'and the second shielding region 140'.
Referring to fig. 2 and 6, a portion of the base layer 100 'overlapping the third masked area 150' may be removed. Accordingly, the third shielding portion 150 may be formed. In one embodiment, a portion of the lower portion of the base layer 100 'overlapping with the third masked area 150' may be removed. For example, laser light may be irradiated toward the lower surface of the base layer 100' overlapping with the third mask region 150', so that a portion of the lower portion of the base layer 100' may be removed. Accordingly, the upper surface of the third shielding part 150 may be located at the same height as the upper surface of the base layer 100'. In contrast, the lower surface of the third shielding part 150 may be located at a higher height than the lower surface of the base layer 100'.
Referring to fig. 2 and 7, the base layer 100 'overlapping the first opening region 110' may be removed. For example, laser light may be irradiated toward the upper surface (or the lower surface) of the base layer 100 'overlapping the first open region 110', so that the base layer 100 'overlapping the first open region 110' may be completely removed. Accordingly, the first opening portion 110 can be formed.
Referring to fig. 2 and 8, a plurality of slits 140a may be formed in the base layer 100 'overlapping the second mask region 140'. For example, laser light may be irradiated toward the upper surface (or the lower surface) of the base layer 100' overlapping the opening 140b, so that a plurality of slits 140a may be formed in the base layer 100' overlapping the second masked region 140 '. Accordingly, the first shielding portion 130 and the second shielding portion 140 can be formed.
Fig. 9 is a perspective view illustrating a state in which a display device manufactured using the mask of fig. 2 is bent, and fig. 10 is a sectional view illustrating a state in which the display device of fig. 9 is bent. For example, fig. 10 may be a sectional view taken along line II-II' of fig. 9.
Referring to fig. 9 and 10, at least a portion of an edge of a display device 1000 manufactured using the mask 100 may be bent. For example, as shown in fig. 9, all of the edges of the display device 1000 may be bent in the back direction. Accordingly, the display device 1000 may include a front face 10, a corner portion 20, and a corner portion 30 at the center.
Specifically, in the case where the display device 1000 is bent, the front part 10 may not be bent. Accordingly, the front surface portion 10 may have a planar shape.
The corner portion 20 may be adjacent to a side of the front portion 10. For example, the display device 1000 may include 4 corner portions 20 respectively adjacent to 4 sides.
In the case where the display device 1000 is bent, the corner portion 20 may be bent. For example, the corner portion 20 may have a two-dimensional curved surface shape. Here, the two-dimensional curved surface shape may be a shape in which a plane is curved in one direction. For example, the corner portion 20 may be curved from the front portion 10 toward the corner portion 20.
The corner part 30 may be adjacent to the corner of the front part 10 and the corner part 20. The corner portions 30 may be arranged between the corner portions 20 perpendicular to each other. For example, the display device 1000 may include 4 corner segments 30 adjacent to the 4 corners, respectively.
In the case where the display device 1000 is bent, the corner portion 30 may be bent. For example, the corner portion 30 may have a three-dimensionally curved surface shape. Here, the three-dimensionally curved surface shape may be a shape in which a plane is curved in two or more directions. For example, the corner portion 30 may be bent in a plurality of directions between two directions perpendicular to each other.
The display device 1000 can display images on the front part 10, the corner part 20, and the corner part 30. Accordingly, dead space of the display apparatus 1000 may be reduced, and the display apparatus 1000 may provide more enhanced aesthetic sense.
As shown in fig. 10, the display apparatus 1000 may include the deposition object substrate 200, the deposition substance pattern DMP, a window WIN, and a frame FRM. The deposition substance pattern DMP may be disposed on the deposition target substrate 200. The window WIM may protect the deposition object substrate 200 and the deposition substance pattern DMP from external impact. The deposition object substrate 200, the deposition substance pattern DMP, and the window WIN may be bent in a manner corresponding to the display apparatus 1000. The frame FRM may be disposed at ends of the deposition object substrate 200, the deposition substance pattern DMP, and the window WIN. The frame FRM may support the deposition object substrate 200, the deposition substance pattern DMP, and the window WIN.
Fig. 11 is a plan view showing a state in which a deposition object substrate included in the display device of fig. 9 is unfolded, and fig. 12 is an enlarged view enlarging a region B of fig. 11.
Referring to fig. 11 and 12, the deposition target substrate 200 may include a flat portion 1100 at the center, a first bent portion 1200, and a second bent portion 1300. For example, the planar portion 1100 may correspond to the front portion 10 of the display device 1000, the first bent portion 1200 may correspond to the corner portion 20 of the display device 1000, and the second bent portion 1300 may correspond to the corner portion 30 of the display device 1000. In the display device 1000, a plurality of pixel regions PXA may be provided in the flat surface portion 1100, the first bent portion 1200, and the second bent portion 1300 in order to display an image on the front surface portion 10, the corner portion 20, and the corner portion 30. Pixels (e.g., PX of fig. 14) may be arranged in each of the pixel areas PXA.
In one embodiment, in order to form the deposition substance pattern DMP on the deposition target substrate 200, the planar portion 1100 may be arranged corresponding to the first opening portion 110 of the mask 100, the first bent portion 1200 may be arranged corresponding to the second opening portion 120, and the second bent portion 1300 may be arranged corresponding to the second shielding portion 140.
In the case where the display device 1000 is bent, the flat portion 1100 may not be bent. Accordingly, the planar portion 1100 may have a planar shape. In one embodiment, the planar portion 1100 may have a rectangular shape with rounded corners. Accordingly, the planar portion 1100 may include 4 side surfaces 1100a and 4 corners 1100 b.
The first bent portion 1200 may be adjacent to the side surface 1100a of the planar portion 1100. For example, the deposition object substrate 200 may include 4 first bent portions 1200 respectively adjacent to the 4 side surfaces 1100 a.
In the case where the display device 1000 is bent, the first bending part 1200 may be bent. For example, the first bending portion 1200 may have the two-dimensional curved surface shape. For example, the first bent portion 1200 may be bent from the planar portion 1100 toward the direction of the first bent portion 1200.
The second bent portion 1300 may be adjacent to the corner 1100b of the planar portion 1100 and the first bent portion 1200. The second bends 1300 may be arranged between the first bends 1200 perpendicular to each other. For example, the deposition target substrate 200 may include 4 second curved portions 1300 respectively adjacent to the 4 corners 1100 b.
In the case where the display device 1000 is bent, the second bending part 1300 may be bent. For example, the second curved part 1300 may have the three-dimensionally curved shape. For example, the second bending part 1300 may be bent in a plurality of directions between two directions perpendicular to each other.
The second bending part 1300 may include a plurality of display blocks 1300 a. The display blocks 1300a may be spaced apart from each other, and may extend from the corner 1100b of the planar part 1100 along an edge of the second bent part 1300. Accordingly, a plurality of openings 1300b may be defined between the display blocks 1300 a.
In one embodiment, in order to form the deposition substance pattern DMP on the deposition target substrate 200, the display blocks 1300a may be arranged corresponding to the openings 140b of the mask 100, and the openings 1300b of the second bending part 1300 may be arranged corresponding to the slits 140a of the mask 100.
Fig. 13 and 14 are cross-sectional views for explaining a method of forming a deposition substance pattern on a deposition target substrate using a mask. For example, fig. 13 and 14 may illustrate a sectional view taken along III-III 'of fig. 3 and a sectional view taken along IV-IV' of fig. 12 at the same time.
Referring to fig. 1, 3, 12, and 13, the deposition target substrate 200 may be arranged to face the deposition source 300 with the mask 100 interposed therebetween. For example, as described above, the planar portion 1100 of the deposition target substrate 200 may be arranged to correspond to the first opening portion 110 of the mask 100, the first bent portion 1200 may be arranged to correspond to the second opening portion 120, and the second bent portion 1300 may be arranged to correspond to the second shielding portion 140. Accordingly, the deposition target substrate 200 may be arranged not to overlap with the first shielding part 130. In one embodiment, the deposition target substrate 200 may be arranged such that a region where the planar portion 1100 meets the second curved portion 1300 overlaps the third shielding portion 150. For example, the deposition target substrate 200 may be arranged such that the corner 1100b of the deposition target substrate 200 overlaps the third shield part 150.
The deposition object substrate 200 may include a support substrate SUB, an element layer TRL, a pixel defining film PDL, an anode electrode ANE, and a light emitting layer EL. The support substrate SUB may include a glass substrate, a quartz substrate, a plastic substrate, and the like. The element layer TRL may be arranged on the support substrate SUB. The element layer TRL may include a plurality of transistors. The anode electrode ANE may be disposed on the element layer TRL. The anode electrodes ANE may be disposed at the pixel areas PXA and may be spaced apart from each other. The anode electrode ANE may be electrically connected to the transistor. The pixel defining film PDL may be disposed on the element layer TRL, and an opening exposing an upper surface of the anode electrode ANE may be formed in the pixel defining film PDL. The opening of the pixel defining film PDL may be formed in the pixel area PXA. The light emitting layer EL may be disposed within the opening of the pixel defining film PDL. For example, the light emitting layer EL may be arranged in the pixel area PXA. The light emitting layer EL may emit light according to a driving current applied through the anode electrode ANE and the deposition substance pattern DMP.
Referring to fig. 1, 2, 3, 11, and 14, the deposition substance DM may be emitted from the deposition source 300. The deposition material DM may be condensed on the deposition target substrate 200 by passing through the opening of the mask 100. Accordingly, the deposition substance pattern DMP may be formed on the deposition target substrate 200. For example, the deposition substance DM may be a metal, an alloy, or the like for forming the metal film for the cathode electrode. Accordingly, the deposition substance pattern DMP may be a cathode electrode for forming the pixel PX. For example, the pixel PX may include the anode electrode ANE, the deposition substance pattern DMP as the cathode electrode, and a light emitting layer EL disposed between the anode electrode ANE and the cathode electrode.
In one embodiment, as described above, the third shielding portion 150 may have a thickness thinner than the first shielding portion 130 and the second shielding portion 140. Accordingly, the deposition material DM may reach the deposition target substrate 200 overlapped with the third shielding part 150. Therefore, the deposition substance pattern DMP may be formed on the deposition target substrate 200 overlapped with the third shielding part 150, and the deposition substance pattern DMP disposed on the planar part 1100 and the deposition substance pattern DMP disposed on the display block 1300a may be connected to each other. Accordingly, the deposition substance pattern DMP may be formed on the deposition object substrate 200 in a single process. In other words, the deposition substance patterns arranged on the deposition object substrate may be formed simultaneously. In addition, since the third shielding part 150 remains with a small thickness, the thickness of the deposition material pattern DMP in the region overlapping the third shielding part 150 may be smaller than the thickness of the deposition material pattern DMP in the region overlapping the first opening 110.
A mask according to an embodiment of the present invention may include a first opening portion, a second shielding portion including a plurality of slits, and a third shielding portion disposed between the first opening portion and the second shielding portion. The third shielding portion is connected to the slit so that the third shielding portion can maintain the shape of the slit. The third shielding part has a thickness thinner than the first shielding part and the second shielding part, so that the deposition material pattern disposed on the deposition target substrate can be simultaneously formed.
As described above, although the present invention has been described with reference to the exemplary embodiments thereof, it will be understood by those having ordinary skill in the art that various modifications and changes may be made without departing from the spirit and scope of the present invention as set forth in the claims below.
Possibility of industrial utilization
The present invention is applicable to a display device and an electronic apparatus including the same. For example, the present invention may be applied to a high definition smart phone, a portable phone, a smart pad, a smart watch, a tablet computer, a navigation system for a vehicle, a television, a computer monitor, a notebook, and the like.
While the present invention has been described with reference to the exemplary embodiments thereof, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the present invention as set forth in the following claims.

Claims (21)

1. A mask, comprising:
a first opening portion;
a first shielding part surrounding the first opening part;
a second shielding portion arranged between the first opening portion and the first shielding portion and including a plurality of slits extending from the first opening portion toward the first shielding portion; and
a third shielding portion arranged between the first opening portion and the second shielding portion and connected with the slit.
2. The mask of claim 1,
the thickness of the third shielding part is smaller than that of the second shielding part.
3. The mask of claim 2,
the upper surface of the third shielding part and the upper surface of the second shielding part are positioned at the same height.
4. The mask of claim 1,
the thickness of the third shielding part is smaller than the width of the third shielding part.
5. The mask of claim 1,
the third shielding portion has a circular arc shape in a plane.
6. The mask of claim 1,
each of the plurality of slits is trapezoidal in shape in plan.
7. The mask of claim 1,
the plurality of slits are spaced apart from each other.
8. The mask of claim 1,
the first opening portion has a rectangular shape with a corner being a circular arc,
the second shielding portion is arranged between the corner of the first opening portion and the first shielding portion.
9. The mask of claim 8, further comprising:
a second opening portion disposed between a side surface of the first opening portion and the first shielding portion.
10. A method of manufacturing a mask, comprising the steps of:
preparing a base layer defining a first open region, a first mask region surrounding the first open region, a second mask region disposed between the first open region and the first mask region, and a third mask region disposed between the first open region and the second mask region;
removing a portion of the base layer in an area overlapping the third masked area to form a third masked portion;
removing a region of the base layer overlapping the first opening region to form a first opening portion; and
a second shielding part including a plurality of slits extending from the first opening region toward the first shielding region is formed in a region of the base layer overlapping the second shielding region.
11. The method for manufacturing a mask according to claim 10,
in the forming of the third shield portion, a portion of a lower portion of the region of the base layer that overlaps with the third shield region is removed.
12. The method for manufacturing a mask according to claim 10,
the upper surface of the third shielding part and the upper surface of the second shielding part are positioned at the same height.
13. The method for manufacturing a mask according to claim 10,
the thickness of the third shielding part is smaller than the width of the third shielding part.
14. The method for manufacturing a mask according to claim 10,
the third shielding portion has a circular arc shape in a plane.
15. The method for manufacturing a mask according to claim 10,
each of the plurality of slits is trapezoidal in shape in plan.
16. The method for manufacturing a mask according to claim 10,
the plurality of slits are spaced apart from each other.
17. The method for manufacturing a mask according to claim 10,
the first opening portion has a rectangular shape with a corner being a circular arc,
the second shielding portion is arranged between the corner of the first opening portion and a first shielding portion corresponding to the first shielding region.
18. The method for manufacturing a mask according to claim 17, further comprising the steps of:
a second opening is formed between a side surface of the first opening and the first shielding portion.
19. A method of manufacturing a display device, comprising the steps of:
arranging a deposition object substrate to face a deposition source with a mask interposed therebetween;
emitting a deposition substance from the deposition source; and
forming a pattern of a deposition substance on the deposition target substrate,
wherein the mask includes:
a first opening portion;
a first shielding part surrounding the first opening part;
a second shielding portion arranged between the first opening portion and the first shielding portion and including a plurality of slits extending from the first opening portion toward the first shielding portion; and
a third shielding portion arranged between the first opening portion and the second shielding portion and connected with the slit.
20. The method of manufacturing a display device according to claim 19,
the mask further includes:
a second opening portion disposed between a side surface of the first opening portion and the first shielding portion,
wherein the deposition object substrate includes:
a planar portion arranged corresponding to the first opening;
a first curved portion arranged corresponding to the second opening portion; and
a second bending part arranged corresponding to the second shielding part,
wherein the pattern of the deposition substance is simultaneously formed on the planar portion, the first curved portion, and the second curved portion.
21. The method of manufacturing a display device according to claim 20,
a thickness of a region of the deposition substance pattern overlapping the third shielding part is smaller than a thickness of a region of the deposition substance pattern overlapping the first opening part.
CN202011441701.0A 2020-05-11 2020-12-08 Mask, method of manufacturing mask, and method of manufacturing display device using mask Pending CN113643965A (en)

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KR10-2020-0056052 2020-05-11
KR1020200056052A KR20210138205A (en) 2020-05-11 2020-05-11 Mask, method for manufacturing the mask, and method for manufacturing a display device using the mask

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CN (1) CN113643965A (en)

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