CN113643950B - Apparatus and method for generating alkali metal or halogen doped coupled gas cluster ion beam - Google Patents
Apparatus and method for generating alkali metal or halogen doped coupled gas cluster ion beam Download PDFInfo
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- CN113643950B CN113643950B CN202110866354.4A CN202110866354A CN113643950B CN 113643950 B CN113643950 B CN 113643950B CN 202110866354 A CN202110866354 A CN 202110866354A CN 113643950 B CN113643950 B CN 113643950B
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- ion beam
- alkali metal
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- 238000010884 ion-beam technique Methods 0.000 title claims abstract description 44
- 229910052736 halogen Inorganic materials 0.000 title claims abstract description 38
- 150000002367 halogens Chemical class 0.000 title claims abstract description 36
- 229910052783 alkali metal Inorganic materials 0.000 title claims abstract description 32
- 150000001340 alkali metals Chemical class 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims abstract description 14
- 150000002500 ions Chemical class 0.000 claims abstract description 128
- 230000007935 neutral effect Effects 0.000 claims abstract description 24
- 238000010168 coupling process Methods 0.000 claims abstract description 15
- 238000005859 coupling reaction Methods 0.000 claims abstract description 15
- 230000008878 coupling Effects 0.000 claims abstract description 14
- 239000000126 substance Substances 0.000 claims description 19
- 238000003860 storage Methods 0.000 claims description 11
- LYQFWZFBNBDLEO-UHFFFAOYSA-M caesium bromide Chemical compound [Br-].[Cs+] LYQFWZFBNBDLEO-UHFFFAOYSA-M 0.000 claims description 8
- 229910002804 graphite Inorganic materials 0.000 claims description 8
- 239000010439 graphite Substances 0.000 claims description 8
- 229910001220 stainless steel Inorganic materials 0.000 claims description 8
- 239000010935 stainless steel Substances 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 230000003993 interaction Effects 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 238000000605 extraction Methods 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- -1 halogen anion Chemical class 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 239000003513 alkali Substances 0.000 claims 8
- 239000002585 base Substances 0.000 claims 1
- 238000003825 pressing Methods 0.000 claims 1
- 238000013467 fragmentation Methods 0.000 abstract description 3
- 238000006062 fragmentation reaction Methods 0.000 abstract description 3
- 150000001793 charged compounds Chemical class 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 32
- 125000004429 atom Chemical group 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 8
- 150000001450 anions Chemical class 0.000 description 5
- 150000001768 cations Chemical class 0.000 description 5
- 230000001105 regulatory effect Effects 0.000 description 5
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000012620 biological material Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- 238000000752 ionisation method Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000011829 room temperature ionic liquid solvent Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 150000001485 argon Chemical class 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000000536 complexating effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 230000037427 ion transport Effects 0.000 description 1
- 239000002608 ionic liquid Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000007431 microscopic evaluation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000000979 retarding effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/026—Cluster ion sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/022—Details
Abstract
The invention designs a device for generating a coupling gas cluster ion beam of doping single-charge alkali metal positive ions or halogen negative ions and provides a method for generating the cluster ion beam. The invention aims to dope and generate a coupling gas cluster ion beam by low-energy single-charge alkali metal positive ions or halogen negative ions generated by a surface ionization ion source, thereby improving the working efficiency of the device. In the reaction process, the monoatomic ions are used for replacing molecular ions or complex ions, so that the fragmentation phenomenon of doping ions in the doping process is avoided. The present invention captures low energy singly charged alkali metal positive ions or halogen negative ions by a neutral gas cluster beam stream composed of a large number of gas atoms (e.g., ar), thereby forming a coupled gas cluster ion beam.
Description
Technical Field
The invention relates to a device and a method for generating an alkali metal or halogen doped coupling gas cluster ion beam, belonging to the fields of cluster ion sources and ion beams and ion beam micro-nano processing.
Background
Clusters consisting of 500-5000 atoms can be doped by complexing singly charged alkali metal positive ions or halogen negative ions, by which the doped cluster ion beam can carry out surface modification, superfine polishing and shallow injection on various materials (including insulators), and can also carry out microscopic analysis layer by layer and locally on complex inorganic materials, biological materials and various organisms (including films), and can be used for exciting chemical reactions on the surfaces of the complex inorganic materials, biological materials and various organisms.
Current technology levels and production processes can produce a solution doped with chemically active molecules HCl, H 2 O and CH 4 Is coupled with argon cluster dissociationAnd (5) sub-beams. In these devices, reactive dopants, either gaseous or vapor, are injected into the coupling chamber of the ion source at a partial pressure of 1-5% relative to the argon pressure, where they are embedded into the Ar cluster structure, and the formed coupling clusters are then ionized by the electron beam in an ionizer. The fundamental disadvantage of this solution is that it is not possible to generate negatively charged cluster ions, which is necessary for dielectric material treatment (e.g. polishing of glass) and analysis of low conductive organic materials, since the negative charge of the primary ions compensates for the surface discharge of the material surface due to ion-electron emission. Technically, the design of the apparatus becomes more complicated by the need to add a coupling chamber to introduce the reactant gases, evacuate and control the gas pressure.
The currently known methods and apparatus are directed to ion-doping clusters of cations and anions extracted from room temperature ionic liquids to form coupled gas-cluster ion beams of two polarities. From a technical point of view, this device is a gas particle source of a neutral cluster beam composed of rare gas, behind the exit diaphragm of which a conical ion source with axial slits is installed. The ion source operates in a field evaporation mode to generate positive and negative ion beams of room-temperature ionic liquid. In the chamber, neutral clusters of rare gas interact with the dopant ions, and then a rare gas cluster ion beam doped with cations or anions of the room temperature ionic liquid, i.e., a coupled cluster ion beam with positive or negative charge, is formed. One disadvantage of this prototype is that it is due to the adiabatic expansion of the working gas from the nozzle (E kin 100 eV), the kinetic energy of the formed neutral cluster beam current is significantly different, so that the generation efficiency of the coupled cluster ion beam with two polarities is lower. The ions are formed by field evaporation of cations or anions in a room temperature liquid at sharp edges of a slit ion source (E kin 1500 eV). The retarding of these ions causes the ion beam to defocus, reducing its density while also reducing the likelihood of neutral gas cluster beam current trapping ions. In addition, the cations and anions of room temperature liquids are complex ions that may be decomposed when interacting with neutral clusters.
Disclosure of Invention
The invention aims to design and manufacture a aerodynamic source capable of generating an alkali metal positive ion or halogen negative ion coupling cluster ion beam doped with single charge state, and the aerodynamic source has higher working efficiency than the existing prototype because the energy of doped ions is greatly reduced, and the problem of decomposition does not exist when the single atom ion is used for doping and interacts with neutral cluster beam current.
In order to solve the problem, the invention provides a method for generating a coupling gas cluster ion beam doped with alkali metal or halogen, wherein neutral gas cluster ion beam formed by a gas power source enters an ionization chamber formed by the ion source, the ion source generates ion beam formed by singly charged alkali metal positive ions or halogen negative ions through surface ionization, the ion beam direction is perpendicular to the direction of the neutral gas cluster ion beam, and the neutral gas cluster ion beam captures singly charged alkali metal positive ions or halogen negative ions to form the coupling gas cluster ion beam doped with alkali metal or halogen.
Moreover, the neutral gas cluster beam current is Ar n The size of the clusters is more than or equal to 500 and less than or equal to 5000, and the energy is in the range of 30-300 eV.
Moreover, the alkali metal positive ion is Cs + The halogen anion is Br - Or I - 。
An apparatus for generating a coupled gas cluster ion beam doped with alkali metal or halogen for the method at least comprises an ion source, wherein the ion source comprises a cathode ionizer, a working substance storage tank and a heater from inside to outside in sequence, and the cathode ionizer is formed by porous tungsten or LaB pressed into porous graphite 6 The working substance storage tank is heated by the heater and can generate alkali metal positive ions or halogen negative ions.
Furthermore, the ion source is in the shape of a hollow cylinder, and the hollow part thereof forms an ionization chamber.
The ion source can be heated by a heater until a working substance is melted, and atoms generated by the melting of the working substance form alkali metal positive ions or halogen negative ions through a cathode ionizer, and enter the ionization chamber to be coupled with neutral gas clusters to form coupled gas cluster ions; an outlet of the ionization chamber is provided with an extraction electrode, and the coupled gas cluster ions are extracted by the extraction electrode to form a coupled gas cluster ion beam, and enter an ion transmission cylinder formed by a diaphragm, a mass separator, a focusing lens, a deflection electrode and the like.
Furthermore, the working substance storage tank stores the working substance which is CsI or CsBr.
The heater is a resistance heater, the resistance heater is electrically connected with a steady-flow power supply, and the steady-flow power supply supplies power to the resistance heater; the resistance heater and the steady-flow power supply are connected with a stabilized power supply for providing negative high voltage, and the stabilized power supply provides kinetic energy for ions.
And the ion source is arranged on a stainless steel carrier, namely the cathode ionizer, the working substance storage tank, the resistance heater and the stainless steel carrier are sequentially arranged from inside to outside, and both ends of the ion source are sealed by graphite films.
Furthermore, permanent magnets are mounted in the interaction areas of the ionization chamber inlet and outlet, which are areas where alkali metal positive ions or halogen negative ions are coupled with neutral gas clusters.
The technique successfully improves the performance and efficiency of the device by forming a coupled gas cluster ion beam using low energy singly charged alkali metal positive ions or halogen negative ions as dopant ions generated by a hollow cylindrical ion source with surface ionization. Such a geometry ion source provides a high density of dopant ions in the ionization chamber. In addition, monoatomic ions are used instead of molecular ions or composite ions, so that the fragmentation phenomenon of doped ions is eliminated, and the service performance of the ion beam is improved.
Drawings
Fig. 1 is a schematic diagram of an ion beam generating apparatus of an alkali metal positive ion or halogen negative ion coupled cluster doped with a single charge state. In the figure: the device comprises a 1-aerodynamic source, a 2-neutral cluster beam, a 3-beam splitter, a 4-coupling chamber, a 5-cathode ionizer, a 6-working substance storage tank, a 7-resistance heater, an 8-steady-flow power supply, 9-doping ions, a 10-steady-flow power supply, a 11-grounding electrode, a 12-leading-out electrode, 13-electrons, 14-permanent magnets and 15-graphite membranes.
Fig. 2 is a schematic circuit diagram of a resistive heater and a regulated power supply connected to a regulated power supply that provides a negative high voltage.
Detailed Description
As shown in fig. 1, comprises a gas power source 1, which emits a high-pressure gas flow to form a neutral cluster beam 2, such as Ar n Wherein n is more than or equal to 500 and less than or equal to 5000. The gas power source is formed by connecting a conical supersonic nozzle with a high-pressure (5-10 bar) gas source. The diameter of the nozzle made of metal is 50-100 μm, the length of the spouting portion is 30mm, and the taper angle is 5-10 degrees. The neutral cluster beam 2 is directed through a beam splitter 3 into an ionization chamber 4 in which an alkali metal positive ion source (e.g., cs is mounted + ) Or a source of halide anions (e.g., br - Or I - ). The ion source is in a hollow cylinder shape and is made of stainless steel serving as a carrier, an ionization chamber is formed in the hollow part of the ion source, and two ends of the ion source are sealed by graphite diaphragms 15. The ion source comprises a cathode ionizer 5 consisting of porous tungsten (for generating positive ions) or LaB intercalated into porous graphite 6 Powder (for generating negative ions). Below the cathode ionizer is a reservoir 6 filled with a working substance (e.g. CsI or CsBr). The ion source is heated by a resistance heating wire or a resistance heater 7, and the heater is powered by a steady-flow power supply 8. Namely, the whole structure of the hollow cylindrical ion source is sequentially provided with a cathode ionizer, a working substance storage tank, a resistance heater and a stainless steel carrier from inside to outside, the ionization chamber is not a structure which is independently arranged or additionally prepared, but the hollow part of the hollow cylindrical ion source can be directly used as the ionization chamber in actual use, and the ion source shown in fig. 1 is a section structure thereof. The vapour of the working substance diffuses through the porous cathode ionizer to the surface where singly charged positive or negative ions 9 are formed according to the different modes of operation (polarity on the cathode). The kinetic energy of the ions is dependent on the acceleration voltage and is controlled by the regulated power supply 10. The zero potential cylindrical electrode 11 (grounding electrode) is made of tungsten grid with 90% transmittance, and the doping ions (namely single-charge alkali metal positive ions or halogen negative ions) and neutrality are controlledThe interaction region of the inert gas beam. In this region, the dopant ions are coupled to clusters, and the formed coupled cluster ion beam is extracted from the extraction electrode 12 and enters an ion transport tube composed of a diaphragm, a mass separator, a focusing lens, a deflection electrode, and the like.
FIG. 2 is a schematic diagram of a specific circuit of a resistive heater and a regulated power supply connected to a regulated power supply providing a negative high voltage, under which negative ions are accelerated toward the center of the ion source. The energy of the ion is dependent on the value of the negative high voltage, so the kinetic energy of the ion is controlled by a stabilized voltage power supply.
In the negative ion generating mode, the cathode ionizer 5 also emits electrons 13. To prevent electrons from entering the interaction region of the ionization chamber entrance and exit, permanent magnets 14 are mounted at these two locations, the magnetic fields of which deflect the electrons significantly, which do not alter the trajectories of the dopant ions due to the large difference in electron and ion masses.
Coupling cluster ion passage the method comprises the following steps: neutral gas cluster beam (e.g. Ar) formed by a gas power source n ) Entering an ionization chamber, wherein the size of clusters is more than or equal to 500 and less than or equal to 5000, and the energy is in the range of 30-300 eV. The ion source is heated to 700-1200 ℃, at this temperature, the working substance melts (the melting points of CsI and CsBr are 621 ℃ and 636 ℃ respectively), the emitted atoms form positive ions or negative ions through the cathode ionizer, and enter the coupling chamber to couple with the argon clusters to form coupling cluster ions.
To form positively charged alkali metal doped ions, e.g. having a first ionization energy E i Cesium vapor of =3.9 eV diffuses through porous tungsten powder to work functionThe heated surface undergoes a surface ionization process. Under the heat balance condition, ionization degree alpha + I.e. the number of positive ions n in the same evaporation mass flow + And neutral atomic number n o Can be described by the Saha-Langmuir formula under first order approximation:
wherein g + 、g o Statistical weights of cations and initial atoms formed, respectively (for monovalent atoms in thermodynamic equilibrium, g + ＝1，g o =2). At t=1000k, the ionization degree α of cesium atoms on the surface of the tungsten cathode ionizer + About 500. Ionization coefficient beta of cesium atom + I.e., the fraction of the total number of cesium atoms that acquires a positive charge (loses electrons), can be described by the following formula:
to form negatively charged halogen-doped ions, e.g. having electron affinity S a Iodine vapor=3.06 eV diffuses through the heated storage means to LaB with work function Φ=2.66 eV 6 The surface of the cathode ionizer. As in the case of the generation of alkali metal positive ions on the surface of the cathode ionizer, a surface ionization process of halogen atoms occurs. The first approximation of the degree of ionization of the negative ions can also be described by the Saha-Langmuir formula:
wherein g - 、g o Statistical weights of anions and initial atoms formed, respectively (for monovalent atoms in thermodynamic equilibrium, g - ＝1，g o =2). At t=1000k, laB 6 Ionization degree alpha of iodine atoms on surface of cathode ionizer - About 500. Ionization coefficient beta of iodine atom - I.e., the portion of the total number of iodine atoms that acquires negative charges (electrons), can be described by the following formula:
thus, in the manner described above, the surface ionized atoms of an alkali metal or halogen may provide positive and negative ionization coefficients approaching 1. In the negative ion generating mode, the cathode ionizer also emits electrons in the device shown in fig. 1, but the electrons cannot enter the ionization chamber due to the deflection of the magnetic field of the permanent magnet. Because of LaB 6 Is chemically active at high temperatures and can react with stainless steel components, thus isolating the cathode ionizer from the cylindrical stainless steel cavity by a graphite diaphragm.
Positive and negative dopant ions formed in the space between the cathode ionizer and the grid are accelerated to an energy of up to 20keV or more, forming chemically active positive or negative cluster ions upon interaction with the cluster beam of the working gas. Beta due to ionization coefficient of doped ions + And beta - (see equations (2) and (4)) is independent of the acceleration voltage that occurs in the event of field evaporation, and therefore the operating efficiency of the device of the present invention is higher than that of existing devices. The device can control the energy of evaporated ions in a wider range so as to increase the capture section of neutral gas clusters and reduce the possibility of cluster fragmentation when colliding with doped ions. The hollow cylindrical structure of the ion source provides a high density of dopant ions in the ionization chamber, which also improves the operating efficiency of the apparatus of the present invention.
Claims (10)
1. A method of generating an alkali metal or halogen doped coupled gas cluster ion beam, characterized by: the neutral gas cluster beam formed by the gas power source enters an ionization chamber formed by the ion source, the ion source generates an ion beam formed by singly charged alkali metal positive ions or halogen negative ions through surface ionization, the direction of the ion beam is perpendicular to the direction of the neutral gas cluster beam, and the neutral gas cluster beam captures singly charged alkali metal positive ions or halogen negative ions to form a coupling gas cluster ion beam doped with alkali metal or halogen.
2. The production of doped bases according to claim 1A method of coupling a gas cluster ion beam of metal or halogen, characterized by: neutral gas cluster beam is Ar n The size of the clusters is more than or equal to 500 and less than or equal to 5000, and the energy is in the range of 30-300 eV.
3. The method of generating an alkali or halogen doped coupled gas cluster ion beam of claim 1, wherein: the alkali metal positive ion is Cs + The halogen anion is Br - Or I - 。
4. An apparatus for generating an alkali or halogen doped coupled gas cluster ion beam for use in the method of claim 1, wherein: comprises at least an ion source, wherein the ion source is sequentially provided with a cathode ionizer, a working substance storage tank and a heater from inside to outside, and the cathode ionizer is formed by pressing porous tungsten or LaB of porous graphite into the cathode ionizer 6 The working substance storage tank is heated by the heater and can generate alkali metal positive ions or halogen negative ions.
5. The apparatus for generating an alkali or halogen doped coupled gas cluster ion beam of claim 4 wherein: the ion source is in a hollow cylinder shape, and the hollow part of the ion source forms an ionization chamber.
6. The apparatus for generating an alkali or halogen doped coupled gas cluster ion beam of claim 5 wherein: the ion source can be heated by a heater until a working substance is melted, and atoms generated by the melting of the working substance form alkali metal positive ions or halogen negative ions through a cathode ionizer, and enter the ionization chamber to be coupled with the neutral gas clusters to form coupled gas cluster ions; the outlet of the ionization chamber is provided with an extraction electrode, and the coupled gas cluster ions are extracted by the extraction electrode to form a coupled gas cluster ion beam, and enter an ion transmission cylinder comprising a diaphragm, a mass separator, a focusing lens and a deflection electrode.
7. The apparatus for generating an alkali or halogen doped coupled gas cluster ion beam of claim 5 wherein: the working substance storage tank stores the working substance CsI or CsBr.
8. The apparatus for generating an alkali or halogen doped coupled gas cluster ion beam of claim 5 wherein: the heater is a resistance heater, the resistance heater is electrically connected with a steady-flow power supply, and the steady-flow power supply supplies power to the resistance heater; the resistance heater and the steady-flow power supply are connected with a stabilized power supply for providing negative high voltage, and the stabilized power supply provides kinetic energy for ions.
9. The apparatus for generating an alkali or halogen doped coupled gas cluster ion beam of claim 5 wherein: the ion source is arranged on a stainless steel carrier, namely the cathode ionizer, the working substance storage tank, the heater and the stainless steel carrier are sequentially arranged from inside to outside, and both ends of the ion source are sealed by graphite diaphragms.
10. The apparatus for generating an alkali or halogen doped coupled gas cluster ion beam of claim 6, wherein: the interaction area of the ionization chamber inlet and outlet is provided with a permanent magnet, and the interaction area is the area where alkali metal positive ions or halogen negative ions are coupled with neutral gas clusters.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2010199036A (en) * | 2009-02-27 | 2010-09-09 | Japan Aviation Electronics Industry Ltd | Generating method of gas cluster ion beam, and processing method of solid surface using its method |
| CN109786204A (en) * | 2019-01-18 | 2019-05-21 | 东莞亚纳纳米科技有限公司 | A kind of method and ion source for drawing ion beam current using cluster gas sputtering target material |
| CN113178372A (en) * | 2021-04-19 | 2021-07-27 | 江苏集创原子团簇科技研究院有限公司 | Apparatus and method for forming gas cluster ion beam using low pressure source |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010199036A (en) * | 2009-02-27 | 2010-09-09 | Japan Aviation Electronics Industry Ltd | Generating method of gas cluster ion beam, and processing method of solid surface using its method |
| CN109786204A (en) * | 2019-01-18 | 2019-05-21 | 东莞亚纳纳米科技有限公司 | A kind of method and ion source for drawing ion beam current using cluster gas sputtering target material |
| CN113178372A (en) * | 2021-04-19 | 2021-07-27 | 江苏集创原子团簇科技研究院有限公司 | Apparatus and method for forming gas cluster ion beam using low pressure source |
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