CN113640592A - Surface acoustic wave electric field sensing device based on piezoelectric effect - Google Patents
Surface acoustic wave electric field sensing device based on piezoelectric effect Download PDFInfo
- Publication number
- CN113640592A CN113640592A CN202111043969.3A CN202111043969A CN113640592A CN 113640592 A CN113640592 A CN 113640592A CN 202111043969 A CN202111043969 A CN 202111043969A CN 113640592 A CN113640592 A CN 113640592A
- Authority
- CN
- China
- Prior art keywords
- electric field
- surface acoustic
- electrode
- piezoelectric material
- vibration pickup
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
- G01R29/12—Measuring electrostatic fields or voltage-potential
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measurement Of Mechanical Vibrations Or Ultrasonic Waves (AREA)
Abstract
A surface acoustic wave electric field sensing device based on piezoelectric effect comprises a piezoelectric material, wherein an excitation area at one end of the piezoelectric material is provided with an excitation electrode, a vibration pickup area at the other end of the piezoelectric material is provided with a vibration pickup electrode, and an area between the excitation area and the vibration pickup area of the piezoelectric material is a propagation area; the positive pole of the exciting electrode is connected with an exciting source, and the negative pole of the exciting electrode is grounded; the positive pole of the vibration pickup electrode is connected with the signal processing circuit, and the negative pole of the vibration pickup electrode is grounded; the excitation electrode and the vibration pickup electrode are both composed of two groups of interdigital electrodes; when the sensor is placed in an electric field to be measured, the piezoelectric material deforms, so that the propagation speed or frequency of surface acoustic waves changes, signals received by the vibration pickup electrode change, and the signals are processed by the signal processing circuit, so that the electric field can be measured. The device has the advantages of wide electric field measurement range, high sensitivity, small volume, low cost and simple preparation, and is suitable for electric field measurement in power grids and equipment.
Description
Technical Field
The invention relates to the field of electric field measurement, in particular to a surface acoustic wave electric field sensing device based on a piezoelectric effect.
Background
The real-time measurement of the information in the power grid has important significance for system running state monitoring, fault prediction, fault diagnosis and equipment state monitoring. In the power grid, the significance of the voltage signal is very important. The fingerprint characteristics of the voltage contain a large amount of information, and the monitoring of the steady-state information of the power grid and the extraction of the transient signal can be realized by measuring the voltage, so that an operation basis is provided for a power grid control end, and the safety and the reliability of the power grid are improved. The traditional voltage measurement means utilizes a mutual inductor to measure, and the measurement equipment is large in size and high in maintenance cost, can only be used for voltage measurement of key nodes, and cannot realize wide-range wide-area monitoring.
The inversion of the voltage signal by the electric field sensor is a new voltage measurement means. On the one hand, electric field sensor is small, with low costs, can arrange on a large scale, and on the other hand utilizes electric field sensor can carry out non-contact measurement, need not consider insulating cost, can not influence the electric energy quality simultaneously.
Common electric field sensors include those based on the electro-optic effect and MEMS electric field sensors. The electric field sensor based on the electro-optic effect is mature in application, high in sensitivity and wide in bandwidth. However, such sensors are limited to electro-optic crystals, have poor temperature stability, and are expensive in equipment. The MEMS electric field sensor measures an electric field by utilizing the electrostatic induction principle, has small volume and low cost, but has poor frequency response and higher power consumption. Therefore, it is necessary to design an electric field sensor with small size, low cost, wide measurement range and wide frequency band.
Disclosure of Invention
In order to solve the problems, the invention provides a surface acoustic wave electric field sensing device based on a piezoelectric effect, which achieves the purpose of measuring an electric field by measuring the change of the frequency or the speed of the surface acoustic wave.
A surface acoustic wave electric field sensing device based on piezoelectric effect. The piezoelectric vibration pickup device comprises a piezoelectric material, wherein an excitation area at one end of the piezoelectric material is provided with an excitation electrode, a vibration pickup area at the other end of the piezoelectric material is provided with a vibration pickup electrode, and an area between the excitation area and the vibration pickup area of the piezoelectric material is a propagation area; the positive electrode of the excitation electrode is connected with an excitation source, and the negative electrode of the excitation electrode is grounded; the positive pole of the vibration pickup electrode is connected with the signal processing circuit, and the negative pole of the vibration pickup electrode is grounded; the excitation electrode and the vibration pickup electrode are both composed of two groups of interdigital electrodes; when the sensor is placed in an electric field to be measured, the piezoelectric material deforms, so that the propagation speed or frequency of surface acoustic waves changes, signals received by the vibration pickup electrodes change, the signal processing circuit processes the signals, and the electric field can be measured.
Preferably, the piezoelectric material is in the form of a strip.
Preferably, the piezoelectric material has a large electromechanical coupling coefficient, a small temperature delay coefficient and a low propagation loss.
Preferably, the piezoelectric material is a piezoelectric crystal.
Preferably, the excitation frequency of the excitation source is 40MHz-1 GHz.
Preferably, the signal processing circuit is composed of an oscillation circuit, a mixing circuit, a low-pass filtering and amplifying circuit, a frequency measuring circuit and a temperature compensation circuit.
Preferably, sound absorption materials are attached to two ends of the piezoelectric material, and the sound surface waves transmitted to the tail end of the piezoelectric material are absorbed, so that interference of reflected waves is avoided.
Preferably, the sound absorbing material is formed by mixing a damping material and an epoxy resin.
Preferably, the piezoelectric material has a thickness of 100um-1mm, a width of 1mm-20mm, and a length of 10mm-100 mm.
Preferably, the length of the propagation area is longer than that of the excitation area and the vibration pickup area, and the sensitivity of the sensor is adjusted by adjusting the length of the propagation area.
The invention has the beneficial effects that:
the sensor designed by utilizing the inverse piezoelectric effect of the piezoelectric material and the propagation characteristics of the surface acoustic wave realizes the measurement of the electric field, and has simple structure and easy processing. Because the wavelength of the surface acoustic wave is short, the size of the surface acoustic wave sensor is far smaller than that of an electromagnetic wave device in the same frequency band, and the miniaturization of the sensor is realized. Because the surface acoustic wave sensor concentrates energy on the surface of the medium, the surface acoustic wave sensor is very sensitive to the change of an external object to be measured, and has high precision and high sensitivity. Because the piezoelectric material has high temperature stability and high characteristic frequency, the device has high temperature stability and wide frequency band and is suitable for various application scenes in a power grid.
Drawings
FIG. 1 is a schematic structural diagram of a surface acoustic wave electric field sensing device based on piezoelectric effect according to the present invention;
FIG. 2 is a schematic diagram of the operation principle of the surface acoustic wave electric field sensing device based on the piezoelectric effect.
In the figure, 1, a piezoelectric material; 2. an excitation electrode; 3. a vibration pickup electrode; 4. a sound absorbing material; 5. a signal processing circuit.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings.
A surface acoustic wave is an elastic wave propagating on the surface of a medium and can be generated on a piezoelectric material by interdigital electrodes. According to the propagation characteristics of surface acoustic waves, the invention provides a surface acoustic wave electric field sensing device based on the piezoelectric effect, as shown in fig. 1. The piezoelectric vibration pickup device comprises a piezoelectric material 1, wherein two ends of the piezoelectric material 1 are respectively provided with an excitation electrode 2 and a vibration pickup electrode 3, the excitation electrode 2 and the vibration pickup electrode 3 are respectively composed of two groups of interdigital electrodes, each group of interdigital electrodes comprises a grounding electrode, and the rear end of the vibration pickup electrode 3 is connected with a signal processing circuit 5.
As shown in fig. 2, the piezoelectric material 1 is generally in the form of a strip, and is divided into three regions: an excitation area, a propagation area and a vibration pickup area. The propagation area is located between the excitation area and the vibration pick-up area. The length of the propagation area is generally longer than that of the excitation area and the vibration pickup area, and the sensitivity of the sensor can be adjusted by adjusting the length of the propagation area. The lengths of the excitation area and the vibration pickup area depend on the size of the interdigital electrode and the parameters of the surface acoustic wave.
The piezoelectric material 1 is generally made of a piezoelectric crystal such as quartz. The size of the piezoelectric material can influence the propagation characteristic of surface acoustic waves, and the piezoelectric materials with different sizes can be selected according to different requirements. The piezoelectric material is generally between 100um-1mm thick, 1mm-20mm wide and 10mm-100mm long. The thinner the thickness, the smaller the width and the longer the length, the larger the sensor response, but the thicker the width and the longer the length, the lower the mechanical strength of the sensor and the increased difficulty of the preparation. The piezoelectric material is required to have a large electromechanical coupling coefficient (the larger the better), a small temperature retardation coefficient (the smaller the better) and a low propagation loss (the smaller the better) in order to secure the propagation efficiency of the surface acoustic wave.
The excitation electrode 2 is located in an excitation region of the piezoelectric material 1. The positive electrode (pressurizing electrode) of the excitation electrode 2 can be directly connected with a signal source, and can also receive an external signal through an antenna to carry out excitation. The negative electrode of the excitation electrode 2 is grounded. When an alternating current signal with a certain frequency is applied to the excitation electrode 2, an electric field is generated between the interdigital electrodes, the piezoelectric material is deformed by the inverse piezoelectric effect, and the piezoelectric material is converted into surface acoustic waves which are transmitted along the surface of the piezoelectric material. The surface acoustic wave frequency is equal to the applied excitation frequency, typically 40MHz-1 GHz.
The vibration pickup electrode 3 is located in the vibration pickup region of the piezoelectric material 1. The positive electrode (signal electrode) of the vibration pickup electrode 3 is connected with the signal processing circuit 5, and the negative electrode is grounded.
The sound absorption material 4 can be attached to two end parts of the piezoelectric material 1 and used for absorbing surface acoustic waves transmitted to the tail end of the piezoelectric material 1 and reducing interference of reflected waves. The sound absorbing material 4 is obtained by mixing a damping material and an epoxy resin.
The signal processing circuit 5 is used for processing signals picked up by the vibration pickup electrode 3 and consists of an oscillating circuit, a mixing circuit, a low-pass filtering and amplifying circuit, a frequency measuring circuit and a temperature compensating circuit.
When a sinusoidal signal is applied to the interdigital electrode of the excitation electrode 2, the sinusoidal signal excites a surface acoustic wave on the piezoelectric material 1, and an electric signal is converted into an acoustic signal. When the surface acoustic wave is transmitted to the vibration pickup electrode 3 (also an interdigital electrode) for vibration pickup arranged at the other end of the piezoelectric material 1 along the medium, the vibration pickup electrode 3 converts the surface acoustic wave into an electric signal.
The piezoelectric material 1 is deformed by an electric field. When the sensor of the present invention is placed in an electric field, the piezoelectric material 1 deforms, which causes a change in the propagation speed or frequency of the surface acoustic wave, and thus the signal received by the vibration pickup electrode 3 changes. The measurement of the electric field can be achieved by processing the signal by the back-end circuit.
The technical solutions described above only represent the preferred technical solutions of the present invention, and some possible modifications to some parts of the technical solutions by those skilled in the art all represent the principles of the present invention, and fall within the protection scope of the present invention.
Claims (10)
1. A surface acoustic wave electric field sensing device based on piezoelectric effect comprises a piezoelectric material, wherein an excitation area at one end of the piezoelectric material is provided with an excitation electrode, a vibration pickup area at the other end of the piezoelectric material is provided with a vibration pickup electrode, and an area between the excitation area and the vibration pickup area of the piezoelectric material is a propagation area; the positive electrode of the excitation electrode is connected with an excitation source, and the negative electrode of the excitation electrode is grounded; the positive pole of the vibration pickup electrode is connected with the signal processing circuit, and the negative pole of the vibration pickup electrode is grounded; the excitation electrode and the vibration pickup electrode are both composed of two groups of interdigital electrodes; when the sensor is placed in an electric field to be measured, the piezoelectric material deforms, so that the propagation speed or frequency of surface acoustic waves changes, signals received by the vibration pickup electrodes change, the signal processing circuit processes the signals, and the electric field can be measured.
2. A surface acoustic wave electric field sensing device based on the piezoelectric effect as claimed in claim 1, wherein said piezoelectric material is an elongated strip.
3. A surface acoustic wave electric field sensing device based on piezoelectric effect as claimed in claim 1 or 2, characterized in that the piezoelectric material has a large electromechanical coupling coefficient, a small temperature delay coefficient and a low propagation loss.
4. A surface acoustic wave electric field sensing device based on piezoelectric effect as claimed in claim 1, wherein said piezoelectric material is a piezoelectric crystal.
5. A surface acoustic wave electric field sensing device based on piezoelectric effect as claimed in claim 1, wherein the excitation frequency of said excitation source is 40MHz-1 GHz.
6. A surface acoustic wave electric field sensing device based on piezoelectric effect as claimed in claim 1, wherein said signal processing circuit is composed of an oscillation circuit, a mixer circuit, a low pass filter amplifier circuit, a frequency measuring circuit and a temperature compensation circuit.
7. A surface acoustic wave electric field sensing device based on piezoelectric effect as claimed in claim 1, wherein sound absorbing material is attached to both ends of said piezoelectric material to absorb surface acoustic waves propagating to the end of the piezoelectric material and avoid interference of reflected waves.
8. A surface acoustic wave electric field sensing device based on piezoelectric effect as claimed in claim 7, wherein said sound absorbing material is a mixture of damping material and epoxy resin.
9. A surface acoustic wave electric field sensing device based on the piezoelectric effect as claimed in claim 1, wherein the piezoelectric material has a thickness of 100um-1mm, a width of 1mm-20mm and a length of 10mm-100 mm.
10. A surface acoustic wave electric field sensing device based on piezoelectric effect as claimed in claim 1, wherein the length of said propagation region is longer than the length of said excitation region and the length of said vibration pickup region, and the sensor sensitivity is adjusted by adjusting the length of said propagation region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111043969.3A CN113640592A (en) | 2021-09-07 | 2021-09-07 | Surface acoustic wave electric field sensing device based on piezoelectric effect |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111043969.3A CN113640592A (en) | 2021-09-07 | 2021-09-07 | Surface acoustic wave electric field sensing device based on piezoelectric effect |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113640592A true CN113640592A (en) | 2021-11-12 |
Family
ID=78425238
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111043969.3A Pending CN113640592A (en) | 2021-09-07 | 2021-09-07 | Surface acoustic wave electric field sensing device based on piezoelectric effect |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113640592A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114113813A (en) * | 2021-11-24 | 2022-03-01 | 北京中科飞龙传感技术有限责任公司 | Self-adaptive MEMS electric field sensor and structure thereof |
| CN114384334A (en) * | 2021-12-03 | 2022-04-22 | 深圳市中明科技股份有限公司 | Wireless transmission electrostatic field online monitoring device and wireless monitoring system |
| CN114384335A (en) * | 2021-12-03 | 2022-04-22 | 深圳市中明科技股份有限公司 | Electrostatic field detection sensor |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4553099A (en) * | 1981-03-06 | 1985-11-12 | Matsushita Electric Industrial Co., Ltd. | Electrostatic voltage sensor |
| EP0166065A1 (en) * | 1984-06-29 | 1986-01-02 | Consiglio Nazionale Delle Ricerche | Voltage sensor utilizing a surface wave electroacoustic structure sensible to the electric field |
| CN101644618A (en) * | 2009-04-17 | 2010-02-10 | 中国科学院声学研究所 | Surface acoustic wave reflective delay line applied in wireless pressure sensor |
| CN103368522A (en) * | 2013-07-30 | 2013-10-23 | 四川九洲空管科技有限责任公司 | Radio frequency acoustic surface wave delay line capable of being applied to L waveband |
| CN111650447A (en) * | 2020-04-24 | 2020-09-11 | 中国人民解放军陆军工程大学 | Surface acoustic wave solid-state electric field sensor |
| CN112485542A (en) * | 2020-11-13 | 2021-03-12 | 彭彦莉 | Electric field detection device based on surface acoustic wave |
| CN112729595A (en) * | 2021-02-02 | 2021-04-30 | 上海航天电子有限公司 | Delay line type surface acoustic wave sensor and manufacturing method thereof |
-
2021
- 2021-09-07 CN CN202111043969.3A patent/CN113640592A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4553099A (en) * | 1981-03-06 | 1985-11-12 | Matsushita Electric Industrial Co., Ltd. | Electrostatic voltage sensor |
| EP0166065A1 (en) * | 1984-06-29 | 1986-01-02 | Consiglio Nazionale Delle Ricerche | Voltage sensor utilizing a surface wave electroacoustic structure sensible to the electric field |
| CN101644618A (en) * | 2009-04-17 | 2010-02-10 | 中国科学院声学研究所 | Surface acoustic wave reflective delay line applied in wireless pressure sensor |
| CN103368522A (en) * | 2013-07-30 | 2013-10-23 | 四川九洲空管科技有限责任公司 | Radio frequency acoustic surface wave delay line capable of being applied to L waveband |
| CN111650447A (en) * | 2020-04-24 | 2020-09-11 | 中国人民解放军陆军工程大学 | Surface acoustic wave solid-state electric field sensor |
| CN112485542A (en) * | 2020-11-13 | 2021-03-12 | 彭彦莉 | Electric field detection device based on surface acoustic wave |
| CN112729595A (en) * | 2021-02-02 | 2021-04-30 | 上海航天电子有限公司 | Delay line type surface acoustic wave sensor and manufacturing method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114113813A (en) * | 2021-11-24 | 2022-03-01 | 北京中科飞龙传感技术有限责任公司 | Self-adaptive MEMS electric field sensor and structure thereof |
| CN114384334A (en) * | 2021-12-03 | 2022-04-22 | 深圳市中明科技股份有限公司 | Wireless transmission electrostatic field online monitoring device and wireless monitoring system |
| CN114384335A (en) * | 2021-12-03 | 2022-04-22 | 深圳市中明科技股份有限公司 | Electrostatic field detection sensor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN113640592A (en) | Surface acoustic wave electric field sensing device based on piezoelectric effect | |
| CN201417195Y (en) | Surface acoustic wave reflection-type delay line | |
| US4467235A (en) | Surface acoustic wave interferometer | |
| US20180209857A1 (en) | Wireless temperature sensor based chip | |
| CN101644618B (en) | Surface acoustic wave reflective delay line applied in wireless pressure sensor | |
| CN107289883B (en) | A kind of wireless passive sonic surface wave strain transducer of differential type resonator type | |
| CN102052986A (en) | Wireless passive surface acoustic wave (SAW) impedance load transducer | |
| CN107015048B (en) | A kind of surface acoustic wave current sensor based on magnetostrictive effect | |
| CN101971493A (en) | A micro antenna device | |
| CN106404247A (en) | Surface acoustic wave double-resonator integrated torque sensor based on Rayleigh wave mode | |
| CN108205118B (en) | Resonant magnetic sensor sensitive unit and digital frequency output magnetic sensor | |
| US20240062739A1 (en) | Magnetic field sensor using acoustically driven ferromagnetic resonance | |
| CN107014325A (en) | A kind of wireless passive sonic surface wave strain transducer | |
| CN104880273A (en) | Pre-stressing force measurement apparatus and method for pre-stress steel strand | |
| CN111982290A (en) | Circular polarized light detector | |
| CN112768907A (en) | Magnetic-electromechanical coupling type miniaturized signal receiving antenna and implementation method | |
| CN114942444B (en) | Flexible surface acoustic wave icing sensor based on wireless passive | |
| CN209727986U (en) | A kind of two-way surface acoustic wave acceleration transducer of lever | |
| CA1136260A (en) | Cds solid state phase insensitive ultrasonic transducer | |
| CN205175572U (en) | Alliteration way surface acoustic wave temperature sensor | |
| CN205647458U (en) | High sensitivity's bi -polar is to resonant mode surface acoustic wave detector | |
| CN111650447B (en) | Surface acoustic wave solid-state electric field sensor | |
| CN210037709U (en) | Novel surface acoustic wave sensor | |
| CN111929624A (en) | Magnetic field detector | |
| CN109682493A (en) | A kind of dual chip passive wireless acoustic surface wave temperature transducer and its temp measuring method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20211112 |
|
| RJ01 | Rejection of invention patent application after publication |