CN113629083A - Shading structure, image sensor and preparation method of image sensor - Google Patents
Shading structure, image sensor and preparation method of image sensor Download PDFInfo
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- CN113629083A CN113629083A CN202110814988.5A CN202110814988A CN113629083A CN 113629083 A CN113629083 A CN 113629083A CN 202110814988 A CN202110814988 A CN 202110814988A CN 113629083 A CN113629083 A CN 113629083A
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- 238000002360 preparation method Methods 0.000 title description 3
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 239000007769 metal material Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 230000000873 masking effect Effects 0.000 claims 1
- 230000003071 parasitic effect Effects 0.000 abstract description 14
- 230000001795 light effect Effects 0.000 abstract description 5
- 230000035945 sensitivity Effects 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 206010034960 Photophobia Diseases 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
The invention provides a shading structure, an image sensor and a manufacturing method of the image sensor. The present invention provides an image sensor, comprising: a substrate; a photodiode located inside the substrate; a dielectric layer located within the substrate and separating the photodiodes; a memory located between the photodiodes; and the shading structure comprises a reflector positioned longitudinally between the photodiodes and a shading plate positioned transversely above the photodiodes. The invention uses the transverse light shading plate to stop normal incidence and small-angle incidence light, and uses the longitudinal light reflecting plate to reflect larger-angle oblique incidence light, thereby eliminating parasitic light effect and reducing the influence of parasitic light in the image sensor on the memory; the reflected light can be absorbed by the photodiode, further increasing the sensitivity of the photodiode.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to a shading structure, an image sensor and a manufacturing method of the image sensor.
Background
The global shutter image sensor with a memory (MEM) structure has an advantage over the prior GS-CIS in terms of time domain noise, and in order to improve the fill factor of the photodiode, a back-illuminated complementary metal oxide semiconductor (BSI) mode can be adopted, however, when the charge domain global shutter operates in the back-illuminated complementary metal oxide semiconductor mode, because the distance between a light shielding plate on the back side of the charge domain global shutter and the memory below the charge domain global shutter is relatively long, parasitic light charges are easily generated in the memory by light rays with large angles. In the GS-CIS of the backlight, it is necessary to implement a light shielding structure on the memory to suppress the influence of the parasitic light on the column-sequential read signal and solve the problem of the Parasitic Light Sensitivity (PLS).
Disclosure of Invention
The invention aims to solve the technical problem of reducing the influence of parasitic light in an image sensor on a memory, and provides a light shielding structure, the image sensor and a preparation method of the image sensor.
In order to solve the above problems, the present invention provides a light shielding structure, which is applied to an image sensor, including a longitudinal light reflecting plate and a lateral light shielding plate.
In order to solve the above problems, the present invention provides a method for manufacturing an image sensor, comprising: providing a substrate, wherein a memory is arranged in the substrate; forming a trench on the substrate above the memory, a bottom of the trench not contacting the memory; forming a dielectric layer on the surface of the groove; forming a longitudinal metal layer in the groove to serve as a reflecting plate; forming a photodiode in the gap of the reflector; and arranging a transverse metal layer as a shading plate above the reflector.
In order to solve the above problem, the present invention provides an image sensor comprising: a substrate; a photodiode located inside the substrate; a dielectric layer located within the substrate and separating the photodiodes; a memory located between the photodiodes; and the shading structure comprises a reflector positioned longitudinally between the photodiodes and a shading plate positioned transversely above the photodiodes.
The invention uses the transverse light shading plate to stop normal incidence and small-angle incidence light, and uses the longitudinal light reflecting plate to reflect larger-angle oblique incidence light, thereby eliminating parasitic light effect and reducing the influence of parasitic light in the image sensor on the memory; the reflected light can be absorbed by the photodiode, further improving the sensitivity of the photodiode.
Drawings
FIG. 1 is a schematic diagram illustrating the steps of one embodiment of the present invention.
FIGS. 2A-2F are schematic views of the process of steps S10-S15 shown in FIG. 1.
Fig. 3 is a schematic diagram of an image sensor according to an embodiment of the invention.
Detailed Description
The following describes in detail specific embodiments of the light shielding structure, the image sensor, and the method for manufacturing the image sensor according to the present invention with reference to the accompanying drawings.
FIG. 1 is a schematic diagram illustrating the steps of an embodiment of the present invention, including: step S10, providing a substrate, wherein a memory is arranged in the substrate; step S11, forming a trench on the substrate above the memory, the bottom of the trench not contacting the memory; step S12, forming a dielectric layer on the surface of the groove; step S13, forming a longitudinal metal layer in the groove as a reflector; step S14, forming a photodiode in the gap of the reflector; and step S15, arranging a transverse metal layer as a shading plate above the reflector.
Referring to step S10, shown in fig. 2A, a substrate 20 is provided, the substrate 20 having a memory 201 disposed therein. In one embodiment of the present invention, the substrate 20 is a silicon substrate.
Referring to step S11, as shown in fig. 2B, a trench 202 is formed in the substrate 20 above the memory 201, and the bottom of the trench 202 does not contact the memory 201. In a specific embodiment of the present invention, the trench 202 is formed by photolithography; the bottom of the trench 202 does not contact the memory 201, so as to ensure that the subsequently formed dielectric layer and the reflector do not directly contact the memory 201.
Referring to step S12, a dielectric layer 203 is formed on the surface of the trench 202 as shown in fig. 2C. In an embodiment of the invention, the dielectric layer 203 may be formed by using a physical vapor deposition method or a chemical vapor deposition method, and is used for refracting light toward a subsequently formed photodiode.
Referring to step S13, as shown in fig. 2D, a longitudinal metal layer is formed in the groove 202 as the reflector 204. In an embodiment of the present invention, the reflective plate 204 is made of a metal material. The reflective plate 204 may reflect a large angle of oblique incident light, and the reflected light may be absorbed by a subsequently formed photodiode.
Referring to step S14, as shown in fig. 2E, the photodiode 205 is formed in the gap of the reflector 204. In an embodiment of the invention, the material of the photodiode 205 is selected from semiconductor materials such as silicon, germanium, indium gallium arsenide, and indium gallium arsenide.
Referring to step S14, as shown in fig. 2F, a lateral metal layer is disposed above the reflector 204 as a mask 206. In one embodiment of the present invention, the light shielding plate 206 is made of a metal material, and the light shielding plate 206 is made of the same material as the reflective plate 204. In other embodiments of the present invention, the reflector 204 and the mask 206 may be made of different metal materials. After the above steps are completed, the formation of the color filter and the upper convex mirror is continued, and the image sensor structure shown in fig. 3 is obtained.
The light shielding structure according to an embodiment of the present invention is applied to an image sensor, and includes a longitudinal light reflecting plate and a transverse light shielding plate; the shading structure is made of metal materials. The shading plate can prevent normal incidence and small-angle incidence light; the reflective plate may reflect a large angle of obliquely incident light, and the reflected light may be absorbed by the photodiode. Therefore, the light shielding structure can reduce the influence of parasitic light on the memory in the image sensor, eliminate the parasitic light effect and improve the sensitivity of the photodiode in the image sensor.
The following describes in detail an image sensor provided with the light shielding structure with reference to fig. 3, where the image sensor adopts the light shielding structure, and the image sensor includes: a substrate 20; a photodiode 205, the photodiode 205 being located inside the substrate 20; a dielectric layer 203, said dielectric layer 203 being located inside said substrate 20 and separating said photodiodes 205; a memory 201, the memory 201 being located between the photodiodes 205; a light shielding structure 21, wherein the light shielding structure 21 comprises a light reflecting plate 204 which is positioned between the photodiodes 205 in the longitudinal direction and a light shielding plate 206 which is positioned above the photodiodes 205 in the transverse direction; as well as color filter 301 and upper convex mirror 302. Fig. 3 is a schematic diagram of an image sensor shown in this embodiment, in which a cross-sectional view of a pixel of the image sensor is developed along the sequence of red, green, and blue sub-pixels, and the structure shown in fig. 3 is also adopted in the schematic diagrams developed according to other sequences. In other embodiments of the present invention, the above structure can be applied to other types of image sensors.
In one embodiment of the present invention, the substrate 20 is a silicon substrate, and the reflective plate 204 is not in contact with the memory 201. The light shielding structure 21 is made of a metal material, the transverse light shielding plate 206 is used for preventing normal incidence and small-angle incidence light, and the longitudinal light reflecting plate 204 is used for reflecting oblique incidence light with a larger angle, so that the parasitic light effect is eliminated, and the influence of parasitic light in the image sensor on the memory 201 is reduced; the reflected light may be absorbed by the photodiode 205 while the dielectric layer 203 refracts the light toward the photodiode 205, thereby increasing the sensitivity of the photodiode 205. In one embodiment of the present invention, the reflector 204 and the mask 206 are made of the same material. In other embodiments of the present invention, the reflector 204 and the mask 205 may be made of different metal materials.
The invention uses the transverse light shading plate to stop normal incidence and small-angle incidence light, and uses the longitudinal light reflecting plate to reflect larger-angle oblique incidence light, thereby eliminating parasitic light effect and reducing the influence of parasitic light in the image sensor on the memory; the reflected light can be absorbed by the photodiode, further improving the sensitivity of the photodiode.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (11)
1. A shading structure is applied to an image sensor and is characterized by comprising a longitudinal reflector and a transverse shading plate.
2. The shading structure according to claim 1, wherein the light reflecting plate and the shading plate of the shading structure are made of metal materials.
3. An image sensor, wherein the image sensor employs a light shielding structure, comprising:
a substrate;
a photodiode located inside the substrate;
a dielectric layer located within the substrate and separating the photodiodes;
a memory located between the photodiodes;
and the shading structure comprises a reflector positioned longitudinally between the photodiodes and a shading plate positioned transversely above the photodiodes.
4. The image sensor of claim 3, wherein the reflector plate is not in contact with the memory.
5. The image sensor as claimed in claim 3, wherein the light reflecting plate and the light shielding plate of the light shielding structure are made of metal materials.
6. The image sensor as in claim 3, wherein the reflector and the mask are made of the same material.
7. The image sensor of claim 3, wherein the substrate is a silicon substrate.
8. A method of manufacturing an image sensor, comprising:
providing a substrate, wherein a memory is arranged in the substrate;
forming a trench on the substrate above the memory, a bottom of the trench not contacting the memory;
forming a dielectric layer on the surface of the groove;
forming a longitudinal metal layer in the groove to serve as a reflecting plate;
forming a photodiode in the gap of the reflector;
and arranging a transverse metal layer as a shading plate above the reflector.
9. The method of claim 8, wherein the reflector and the mask of the masking structure are made of metal.
10. The method of claim 8 wherein the reflector and the mask are of the same material.
11. The method of claim 8, wherein the substrate is a silicon substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110814988.5A CN113629083A (en) | 2021-07-19 | 2021-07-19 | Shading structure, image sensor and preparation method of image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110814988.5A CN113629083A (en) | 2021-07-19 | 2021-07-19 | Shading structure, image sensor and preparation method of image sensor |
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| CN113629083A true CN113629083A (en) | 2021-11-09 |
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| CN202110814988.5A Pending CN113629083A (en) | 2021-07-19 | 2021-07-19 | Shading structure, image sensor and preparation method of image sensor |
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| US20170339355A1 (en) * | 2016-05-19 | 2017-11-23 | Semiconductor Components Industries, Llc | Imaging systems with global shutter phase detection pixels |
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| US20190006408A1 (en) * | 2017-06-30 | 2019-01-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor device with reflective structure and method for forming the same |
| US20190140006A1 (en) * | 2017-11-09 | 2019-05-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor device and method for forming the same |
| CN110112167A (en) * | 2019-05-31 | 2019-08-09 | 德淮半导体有限公司 | Imaging sensor and forming method thereof |
| US10432883B1 (en) * | 2018-06-12 | 2019-10-01 | Semiconductor Components Industries, Llc | Backside illuminated global shutter pixels |
| CN112117291A (en) * | 2020-10-30 | 2020-12-22 | 联合微电子中心有限责任公司 | Backside-illuminated charge domain global shutter image sensor and manufacturing method thereof |
| DE102020124766A1 (en) * | 2019-09-30 | 2021-04-01 | Taiwan Semiconductor Manufacturing Co. Ltd. | EMBEDDED LIGHT SHIELDING STRUCTURE FOR CMOS IMAGE SENSOR |
| WO2021112128A1 (en) * | 2019-12-03 | 2021-06-10 | ソニーセミコンダクタソリューションズ株式会社 | Imaging device, method for manufacturing same, and electronic apparatus |
| US20210193702A1 (en) * | 2019-12-19 | 2021-06-24 | Omnivision Technologies, Inc. | Deep trench isolation (dti) structure for cmos image sensor |
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2021
- 2021-07-19 CN CN202110814988.5A patent/CN113629083A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170339355A1 (en) * | 2016-05-19 | 2017-11-23 | Semiconductor Components Industries, Llc | Imaging systems with global shutter phase detection pixels |
| US20190006408A1 (en) * | 2017-06-30 | 2019-01-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor device with reflective structure and method for forming the same |
| US20190140006A1 (en) * | 2017-11-09 | 2019-05-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor device and method for forming the same |
| US10432883B1 (en) * | 2018-06-12 | 2019-10-01 | Semiconductor Components Industries, Llc | Backside illuminated global shutter pixels |
| CN109119434A (en) * | 2018-08-31 | 2019-01-01 | 上海华力集成电路制造有限公司 | A kind of dot structure and its manufacturing method |
| CN110112167A (en) * | 2019-05-31 | 2019-08-09 | 德淮半导体有限公司 | Imaging sensor and forming method thereof |
| DE102020124766A1 (en) * | 2019-09-30 | 2021-04-01 | Taiwan Semiconductor Manufacturing Co. Ltd. | EMBEDDED LIGHT SHIELDING STRUCTURE FOR CMOS IMAGE SENSOR |
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