CN113625129A - DBC substrate interface crack development state evaluation method based on equivalent capacitance - Google Patents
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- 239000000758 substrate Substances 0.000 title claims abstract description 168
- 238000011161 development Methods 0.000 title claims abstract description 45
- 238000011156 evaluation Methods 0.000 title claims abstract description 16
- 239000000919 ceramic Substances 0.000 claims abstract description 48
- 238000000034 method Methods 0.000 claims abstract description 27
- 230000000977 initiatory effect Effects 0.000 claims abstract description 9
- 230000018109 developmental process Effects 0.000 claims description 39
- 230000032683 aging Effects 0.000 claims description 26
- 238000012360 testing method Methods 0.000 claims description 19
- 229930182555 Penicillin Natural products 0.000 claims description 18
- 229940049954 penicillin Drugs 0.000 claims description 18
- 230000035945 sensitivity Effects 0.000 claims description 12
- 125000004122 cyclic group Chemical group 0.000 claims description 11
- 238000004364 calculation method Methods 0.000 claims description 4
- 238000005336 cracking Methods 0.000 claims description 4
- 238000013170 computed tomography imaging Methods 0.000 claims description 3
- 238000009659 non-destructive testing Methods 0.000 abstract description 3
- 229910052802 copper Inorganic materials 0.000 description 10
- 239000010949 copper Substances 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 230000017525 heat dissipation Effects 0.000 description 3
- 239000005022 packaging material Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 238000005382 thermal cycling Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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Abstract
The invention discloses a DBC substrate interface crack development state evaluation method based on equivalent capacitance, which comprises the following steps: obtaining the equivalent capacitance of a DBC substrate to be evaluated; calculating the equivalent capacitance percentage of the DBC substrate to be evaluated according to the equivalent capacitance of the DBC substrate to be evaluated; judging the crack development stage of the DBC substrate to be evaluated according to the equivalent capacitance percentage of the DBC substrate to be evaluated and the obtained equivalent capacitance critical percentage of the DBC substrate; when the equivalent capacitance percentage of the DBC substrate to be evaluated is larger than the critical equivalent capacitance percentage, the crack development at the copper-ceramic interface of the DBC substrate to be evaluated is in a crack initiation stage; and when the equivalent capacitance percentage of the DBC substrate to be evaluated is equal to or less than the critical equivalent capacitance percentage, indicating that the crack development at the copper-ceramic interface of the DBC substrate to be evaluated is in a crack propagation stage. The invention is an accurate, simple and nondestructive testing method, and provides a new choice for evaluating the development state of the DBC substrate interface crack.
Description
Technical Field
The invention belongs to the field of electrical insulation detection of power equipment, and relates to an equivalent capacitance-based DBC substrate interface crack development state evaluation method.
Background
The DBC ceramic copper-clad substrate is a composite material with a copper-ceramic-copper sandwich structure. The ceramic packaging material has the characteristics of good heat dissipation, high insulation, high mechanical strength and thermal expansion and chip matching of ceramic, has the characteristics of strong oxygen-free copper current carrying capacity, good welding and bonding performance and high thermal conductivity, and is one of the key packaging materials of the IGBT module. The heat generated by the IGBT module in actual operation is mainly transferred to the heat dissipation plate through the DBC substrate and finally conducted out, so that the DBC substrate is one of the key parts affecting the long-term stable operation of the IGBT module.
The inherent difference in thermal expansion coefficient between the ceramic and the copper causes the DBC substrate to generate a large stress at the interface between the copper and the ceramic when subjected to thermal cycling, thermal shock, etc., thereby causing micro-cracks at the interface. When cracks or air gaps are generated between the copper layer and the ceramic layer, the overall thermal conductivity of the DBC substrate is remarkably reduced, and the heat dissipation capacity of the DBC substrate is remarkably reduced; when the substrate bears higher voltage during actual operation, partial discharge is easily generated at the crack of the interface, and electrical branches are induced in the packaging material of the substrate to damage the insulation structure of the system, so that the DBC substrate is gradually failed.
At present, the failure of the DBC substrate is generally considered to be caused by the continuous expansion of cracks at the copper-ceramic interface, but the crack growth condition at the interface cannot be directly observed in the actual operation condition of the IGBT. The mechanical property change of the DBC substrate can be indirectly represented by testing the peel strength of the DBC substrate, but a sample needs to be damaged; the shape characteristics of the copper-ceramic interface can be observed through tests such as an ultrasonic scanning microscope and X-ray CT imaging, but the operation process is complicated, and microcracks at the initiation stage are not easy to observe. If a test method which is easy to operate, accurate, sensitive and free of sample damage is adopted to evaluate the crack development state of the copper-ceramic interface of the DBC substrate, the failure condition of the substrate can be predicted favorably, and the operation reliability of the IGBT module is improved.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention aims to provide the DBC substrate interface crack development state evaluation method based on the equivalent capacitance, the method has the advantages of high analysis speed, simplicity and feasibility, nondestructive testing, low requirement on a sample and the like, and important basis can be provided for quickly and accurately evaluating the development state of the DBC substrate interface crack.
In order to achieve the purpose, the invention adopts the following technical scheme to realize the purpose:
a DBC substrate interface crack development state evaluation method based on equivalent capacitance comprises the following steps:
obtaining the equivalent capacitance of a DBC substrate to be evaluated;
calculating the equivalent capacitance percentage according to the equivalent capacitance of the DBC substrate to be evaluated, wherein the equivalent capacitance percentage of the DBC substrate is the percentage of the equivalent capacitance value of the aged DBC substrate and the equivalent capacitance value of the original DBC substrate which is not aged;
judging the crack development stage of the DBC substrate to be evaluated according to the equivalent capacitance percentage of the DBC substrate to be evaluated and the obtained equivalent capacitance critical percentage of the DBC substrate: when the equivalent capacitance percentage is larger than the critical equivalent capacitance percentage, the crack development at the copper-ceramic interface of the DBC substrate to be evaluated is in a crack initiation stage; and when the equivalent capacitance percentage of the DBC substrate to be evaluated is equal to or less than the critical equivalent capacitance percentage, indicating that the crack development at the copper-ceramic interface of the DBC substrate to be evaluated is in a crack propagation stage.
Wherein the critical percentage of equivalent capacitance of the DBC substrate is the percentage of equivalent capacitance of the DBC substrate when the DBC substrate exhibits significant cracking at the copper-ceramic interface.
Preferably, the equivalent capacitance of the DBC substrate to be evaluated is tested based on a penicillin bridge method.
Preferably, the process for testing the equivalent capacitance of the DBC substrate to be evaluated based on the penicillin bridge method includes:
clamping a DBC substrate to be evaluated between electrodes of a penicillin bridge, gradually adjusting the test voltage to 0.5-1.5 kV, and adjusting the value of an adjustable resistor to enable the reading of an ammeter to be zero; the sensitivity knob is rotated to increase the sensitivity of the penicillin bridge system, and the value of the adjustable resistor is adjusted again to enable the reading of the ammeter to be close to 0; and repeating the process until the reading of the ammeter is zero at the highest sensitivity, and calculating the equivalent capacitance of the DBC substrate to be evaluated according to the test result.
Preferably, the critical percentage of the equivalent capacitance of the DBC substrate is determined according to the dielectric loss tangent of the DBC substrate and the relation between the state of the copper-ceramic interface and the equivalent capacitance.
Preferably, the critical percentage of the equivalent capacitance of the DBC substrate is the percentage of the equivalent capacitance of the DBC substrate at which the dielectric loss tangent of the DBC substrate is significantly turned and a significant crack occurs at the copper-ceramic interface.
Preferably, the process of obtaining the dielectric loss tangent of the DBC substrate includes:
carrying out high-low temperature cyclic aging treatment on a plurality of DBC substrates, wherein the aging treatment time of each DBC substrate is different; and then testing the dielectric loss tangent value of each DBC substrate by adopting a penicillin bridge, and determining the point of obvious turning of the dielectric loss tangent of the DBC substrate according to the mass loss tangent values of all the DBC substrates.
Preferably, the values of the dielectric tangents of all DBC substrates are plotted, and the point at which the dielectric tangent of the DBC substrate turns significantly is determined from the plot.
Preferably, when the high-low temperature cyclic aging treatment is performed on a plurality of DBC substrates, the high-low temperature cyclic aging treatment with the temperature range of minus 55-150 ℃ is performed, and the high-low temperature cyclic aging treatment with different periods is performed on each DBC substrate.
Preferably, the cycle of the high-low temperature cold-hot cycle aging treatment is 2-5 hours, and the cycle can be selected according to different DBC substrates.
Preferably, an ultrasonic scanning microscope and CT imaging are used for acquiring the condition of the copper-ceramic interface of the DBC substrate and determining the time point of obvious crack at the copper-ceramic interface.
The invention also provides a DBC substrate interface crack development state evaluation system based on the equivalent capacitance, which comprises the following steps:
an equivalent capacitance acquisition module: the equivalent capacitance of the DBC substrate to be evaluated is obtained;
a calculation module: the DBC substrate equivalent capacitance calculation method comprises the steps of calculating equivalent capacitance percentage according to equivalent capacitance of a DBC substrate to be evaluated, wherein the equivalent capacitance percentage of the DBC substrate is the percentage of equivalent capacitance of the aged DBC substrate to equivalent capacitance of an unaged original DBC substrate;
a judging module: the method is used for judging the crack development stage of the DBC substrate to be evaluated according to the equivalent capacitance percentage of the DBC substrate to be evaluated and the obtained equivalent capacitance critical percentage of the DBC substrate: when the equivalent capacitance percentage of the DBC substrate to be evaluated is larger than the critical equivalent capacitance percentage, the crack development at the copper-ceramic interface of the DBC substrate to be evaluated is in a crack initiation stage; when the equivalent capacitance percentage of the DBC substrate to be evaluated is equal to or less than the critical equivalent capacitance percentage, indicating that the crack development at the copper-ceramic interface of the DBC substrate to be evaluated is in a crack propagation stage; wherein the critical percentage of equivalent capacitance of the DBC substrate is the percentage of equivalent capacitance of the DBC substrate when the DBC substrate exhibits significant cracking at the copper-ceramic interface.
The invention has the following beneficial effects:
according to the DBC substrate interface crack development state evaluation method based on the equivalent capacitance, the more the equivalent capacitance is close to the initial value, the better the interface crack state of the substrate is indicated by obtaining the equivalent capacitance of the DBC substrate to be evaluated; the smaller the equivalent capacitance is, the more serious the interface crack state of the substrate is, and the development state of the DBC substrate interface crack is well reflected. Correspondingly, the two parameters of the equivalent capacitance percentage and the critical equivalent capacitance percentage of the DBC substrate can be suitable for evaluation of different types of DBC substrates, so that the method is an accurate, simple and nondestructive testing method and is suitable for evaluation of different types of DBC substrates. In conclusion, the evaluation method of the invention can solve the technical problem that the existing method cannot accurately and directly judge the development stage of the DBC substrate interface crack.
Drawings
FIG. 1 is a diagram illustrating equivalent capacitances of target samples at different aging periods according to an embodiment of the present invention;
FIG. 2 is a graph of the dielectric loss tangent of target samples at different aging periods in an example of the present invention;
FIG. 3(a) is a graph of the results of an ultrasonographic microscope of the copper-ceramic interface of a substrate before aging in an embodiment of the present invention; FIG. 3(b) is a scanning ultrasound microscope image of the critical phase copper-ceramic interface of the substrate in an embodiment of the present invention.
Detailed Description
The invention is described in further detail below with reference to the accompanying drawings:
in a working condition, when the DBC substrate is subjected to thermal cycling, thermal shock and the like due to the inherent difference of thermal expansion coefficients between the ceramic and the copper, a large stress is generated at the interface between the copper and the ceramic, so that microcracks are caused at the interface. The nature of the micro-cracks is air gaps, so that when cracks are introduced at the interface, equivalent to air capacitance connected in series between the copper and the ceramic layer, the equivalent capacitance of the whole DBC substrate gradually decreases. Therefore, the development stage of the interface crack can be judged according to the change of the equivalent capacitance of the substrate.
Based on the method, the invention develops an evaluation method of the DBC substrate interface crack development state based on the equivalent capacitance, which comprises the following steps:
1) preparing a sample: preparing a plurality of DBC substrates to be evaluated, taking one sample as an unaged original sample, carrying out high-low temperature cyclic aging treatment on the rest samples, and taking out the samples after aging treatment of the samples for different time as a target sample for representing the development state of the interface crack;
2) equivalent capacitance of test specimen: testing the equivalent capacitance of a target sample based on a penicillin bridge method;
3) determination of critical percentage of equivalent capacitance: defining the ratio of the equivalent capacitance value of the aged DBC substrate to the equivalent capacitance value of the unaged original sample as equivalent capacitance percentage; defining the equivalent capacitance percentage of the DBC substrate when obvious cracks appear at a copper-ceramic interface as the equivalent capacitance critical percentage, and determining the equivalent capacitance critical percentage by researching the relation between the dielectric loss tangent, the copper-ceramic interface state and the equivalent capacitance;
4) and (3) characterizing the crack development stage: and judging the crack development stage at the copper-ceramic interface of the DBC substrate to be evaluated by comparing the equivalent capacitance percentage of the target sample with the critical equivalent capacitance percentage.
In the step 1), the high-low temperature cyclic aging treatment of the slices is carried out at-55-150 ℃; the cycle period number of the high-low temperature cyclic aging treatment of a plurality of samples is controllable, and the temperature rising and reducing rate is adjustable.
In the step 2), firstly, a sample is clamped between electrodes of a penicillin bridge, then the test voltage is gradually adjusted to 0.5-1.5 kV, and the value of an adjustable resistor is adjusted to enable the reading of an ammeter to be close to 0; the sensitivity knob is rotated to increase the sensitivity of the bridge system, and the value of the adjustable resistor is adjusted again to enable the reading of the ammeter to be close to 0; and repeating the steps until the reading of the ammeter is close to 0 at the highest sensitivity, and calculating the equivalent capacitance of the tested sample after recording.
In the step 3), the dielectric loss tangent value of the target sample is measured simultaneously when the equivalent capacitance is measured by using a penicillin bridge, the copper-ceramic interface condition is obtained by an ultrasonic scanning microscope, and the critical percentage of the equivalent capacitance is the percentage of the equivalent capacitance of the sample with the dielectric loss tangent having an obvious turning point and the interface having an obvious crack.
In the step 4): when the equivalent capacitance percentage in the sample is larger than the critical equivalent capacitance percentage, the crack development at the copper-ceramic interface of the DBC substrate is in a crack initiation stage;
when the equivalent capacitance percentage in the specimen is equal to or less than the critical equivalent capacitance percentage, the crack development at the copper-ceramic interface of the DBC substrate is in a crack propagation stage.
Examples
Commercial Al is used below2O3For the example of the type DBC copper-clad ceramic substrate, the equivalent capacitance is tested by a penicillin bridge method:
the penicillin bridge system used in this embodiment is a QS37a type high-voltage capacitor bridge purchased from shanghai peichi electronics technology development ltd, and a test sample is clamped between electrodes of the penicillin bridge for testing, which specifically includes the following steps:
1) preparing a sample: several commercial Al were prepared2O3The overall diameter of the DBC copper-clad ceramic substrate is 30mm, the thicknesses of an upper copper layer and a lower copper layer are 0.3mm, and the thickness of a ceramic layer is 0.635 mm. Carrying out high-low temperature cold-heat cycle aging experiments on the selected samples at the temperature range of-55-150 ℃, wherein each cycle is 4 hours, the number of aging cycles is 0, 5, 15, 30, 38, 45, 55 and 70, and eight target samples are provided;
2) and (3) testing equivalent capacitance: firstly, clamping a sample between electrodes of a penicillin bridge, gradually adjusting the test voltage to 0.5-1.5 kV, and adjusting the value of an adjustable resistor to enable the reading of an ammeter to be 0; the sensitivity knob is rotated to increase the sensitivity of the bridge system, and the value of the adjustable resistor is adjusted again to enable the reading of the ammeter to be 0; and repeating the steps until the reading of the ammeter is 0 at the highest sensitivity, calculating the equivalent capacitance of the tested sample after recording, and drawing the obtained data into a graph 1.
3) It can be seen from fig. 1 that as the aging period increases, the equivalent capacitance of the sample slightly decreases before 45 cycles, which is the crack initiation period; after 45 cycles, the equivalent capacitance of the whole substrate is obviously reduced by the expanded cracks, and the stage is a crack expansion period.
4) Determination of critical equivalent capacitance percentage: and judging the percentage of the critical equivalent capacitance by combining the dielectric loss tangent value and an ultrasonic scanning microscope picture at the interface. The dielectric loss tangent value of a target sample is tested by adopting a penicillin bridge, the test result is shown in figure 2, and the obvious turning point of the loss value can be seen from figure 2 when the sample is aged for 45 cycles, because the value is reduced because the air gap is too large after crack propagation and partial discharge can not occur; the copper-ceramic interface morphology of the target sample was tested by using an ultrasonic scanning microscope, and the test results are shown in fig. 3(a) and 3(b), and it can be seen that cracks appeared at the interface at 45 cycles of aging compared to before aging. The percent equivalent capacitance of the sample at 45 cycles of aging is thus the critical percent equivalent capacitance, which is 95%.
5) And (3) evaluating the aging state: when the equivalent capacitance percentage in the sample is larger than the critical equivalent capacitance percentage, the crack development at the copper-ceramic interface of the DBC substrate is in a crack initiation stage; when the equivalent capacitance percentage in the specimen is equal to or less than the critical equivalent capacitance percentage, the crack development at the copper-ceramic interface of the DBC substrate is in a crack propagation stage.
Claims (10)
1. A DBC substrate interface crack development state evaluation method based on equivalent capacitance is characterized by comprising the following steps:
obtaining the equivalent capacitance of a DBC substrate to be evaluated;
calculating the equivalent capacitance percentage according to the equivalent capacitance of the DBC substrate to be evaluated, wherein the equivalent capacitance percentage of the DBC substrate is the percentage of the equivalent capacitance value of the aged DBC substrate and the equivalent capacitance value of the original DBC substrate which is not aged;
judging the crack development stage of the DBC substrate to be evaluated according to the equivalent capacitance percentage of the DBC substrate to be evaluated and the obtained equivalent capacitance critical percentage of the DBC substrate: when the equivalent capacitance percentage of the DBC substrate to be evaluated is larger than the critical equivalent capacitance percentage, the crack development at the copper-ceramic interface of the DBC substrate to be evaluated is in a crack initiation stage; when the equivalent capacitance percentage of the DBC substrate to be evaluated is equal to or less than the critical equivalent capacitance percentage, indicating that the crack development at the copper-ceramic interface of the DBC substrate to be evaluated is in a crack propagation stage;
wherein the critical percentage of equivalent capacitance of the DBC substrate is the percentage of equivalent capacitance of the DBC substrate when the DBC substrate exhibits significant cracking at the copper-ceramic interface.
2. The DBC substrate interface crack development state evaluation method based on the equivalent capacitance of claim 1, wherein the equivalent capacitance of the DBC substrate to be evaluated is tested based on a penicillin bridge method; the process for testing the equivalent capacitance of the DBC substrate to be evaluated based on the penicillin bridge method comprises the following steps:
clamping a DBC substrate to be evaluated between electrodes of a penicillin bridge, gradually adjusting the test voltage to 0.5-1.5 kV, and adjusting the value of an adjustable resistor to enable the reading of an ammeter to be 0; the sensitivity knob is rotated to increase the sensitivity of the penicillin bridge system, and the value of the adjustable resistor is adjusted again to enable the reading of the ammeter to be close to 0; and repeating the process until the reading of the ammeter is zero at the highest sensitivity, and calculating the equivalent capacitance of the DBC substrate to be evaluated according to the test result.
3. The method for evaluating the development state of the interface crack of the DBC substrate based on the equivalent capacitance as claimed in claim 1, wherein the critical percentage of the equivalent capacitance of the DBC substrate is determined according to the dielectric loss tangent of the DBC substrate and the relationship between the state of the copper-ceramic interface and the equivalent capacitance.
4. The method as claimed in claim 3, wherein the DBC substrate critical equivalent capacitance percentage is a percentage of the DBC substrate at which a significant turning point of the dielectric loss tangent of the DBC substrate occurs and a significant crack occurs at the copper-ceramic interface.
5. The method for evaluating the development state of the interfacial crack of the DBC substrate based on the equivalent capacitance of claim 3, wherein the process of obtaining the dielectric loss tangent of the DBC substrate comprises the following steps:
carrying out high-low temperature cyclic aging treatment on a plurality of DBC substrates, wherein the aging treatment time of each DBC substrate is different; and then testing the dielectric loss tangent value of each DBC substrate by adopting a penicillin bridge, and determining the point of obvious turning of the dielectric loss tangent of the DBC substrate according to the mass loss tangent values of all the DBC substrates.
6. The method as claimed in claim 5, wherein the values of the loss tangents of all DBC substrates are plotted, and the point at which the dielectric loss tangent of the DBC substrate turns significantly is determined from the plot.
7. The method for evaluating the development state of the interfacial cracks of the DBC substrate based on the equivalent capacitance of claim 3, wherein when the high-temperature and low-temperature cyclic aging treatment is performed on a plurality of DBC substrates, the high-temperature and low-temperature cyclic aging treatment with the temperature range of-55 ℃ to 150 ℃ is performed, and the high-temperature and low-temperature cyclic aging treatment with different periods is performed on each DBC substrate.
8. The method of claim 7, wherein the cycle of the high-low temperature thermal cycle aging treatment is 2-5 hours.
9. The DBC substrate interface crack development state evaluation method based on the equivalent capacitance of claim 3, wherein an ultrasonic scanning microscope or CT imaging is utilized to obtain the copper-ceramic interface condition of the DBC substrate and determine the time point of obvious crack at the copper-ceramic interface.
10. An equivalent capacitance-based DBC substrate interface crack development state evaluation system is characterized by comprising:
an equivalent capacitance acquisition module: the equivalent capacitance of the DBC substrate to be evaluated is obtained;
a calculation module: the DBC substrate equivalent capacitance calculation method comprises the steps of calculating equivalent capacitance percentage according to equivalent capacitance of a DBC substrate to be evaluated, wherein the equivalent capacitance percentage of the DBC substrate is the percentage of equivalent capacitance of the aged DBC substrate to equivalent capacitance of an unaged original DBC substrate;
a judging module: the method is used for judging the crack development stage of the DBC substrate to be evaluated according to the equivalent capacitance percentage of the DBC substrate to be evaluated and the obtained equivalent capacitance critical percentage of the DBC substrate: when the equivalent capacitance percentage of the DBC substrate to be evaluated is larger than the critical equivalent capacitance percentage, the crack development at the copper-ceramic interface of the DBC substrate to be evaluated is in a crack initiation stage; when the equivalent capacitance percentage of the DBC substrate to be evaluated is equal to or less than the critical equivalent capacitance percentage, indicating that the crack development at the copper-ceramic interface of the DBC substrate to be evaluated is in a crack propagation stage; wherein the critical percentage of equivalent capacitance of the DBC substrate is the percentage of equivalent capacitance of the DBC substrate when the DBC substrate exhibits significant cracking at the copper-ceramic interface.
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| CN111400904A (en) * | 2020-03-16 | 2020-07-10 | 南京航空航天大学 | Prediction method for crack density of ceramic matrix composite substrate |
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2021
- 2021-07-22 CN CN202110832954.9A patent/CN113625129A/en active Pending
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