CN113621930A

CN113621930A - Deposition system

Info

Publication number: CN113621930A
Application number: CN202011014219.9A
Authority: CN
Inventors: 李镐准; 金京汉; 朴在穆; 赵源锡; 金盛珍; 文柱日; 朴宰完; 崔烔赫
Original assignee: Samsung Display Co Ltd
Current assignee: Samsung Display Co Ltd
Priority date: 2020-05-06
Filing date: 2020-09-24
Publication date: 2021-11-09
Also published as: KR20210136207A

Abstract

The deposition system of the present invention comprises: a chamber having an operation space maintained in a vacuum state; a first transfer device that circulates and transfers the carrier along a first path in the chamber; a second transfer device for reciprocating and transferring the mask along a second path in the chamber; a deposition device disposed in the deposition region along a first path within the chamber; a loading part arranged in the chamber; and a third transfer device connected to the first path and the loading part, the carrier being combined with the substrate in a substrate combining station of the first path and being combined with the mask in a mask combining station where the first path meets the second path, the carrier passing through the deposition area after being combined with the substrate and the mask and being separated from the mask in a mask separating station where the first path meets the second path and being separated from the substrate in a substrate separating station of the first path.

Description

Deposition system

Technical Field

The present invention relates to a deposition system. More particularly, the present invention relates to a deposition system including a vacuum chamber.

Background

Among display devices, organic light emitting display devices have attracted attention as next-generation display devices because of their wide viewing angle, excellent contrast, and rapid response speed.

The organic light emitting display device includes a lower electrode and an upper electrode facing each other, and an intermediate layer disposed between the lower electrode and the upper electrode. The electrode and the intermediate layer, etc. may be formed by various methods. For example, the electrode and the intermediate layer, etc. may be formed by a deposition process. The deposition process may be performed on the substrate to be subjected to the deposition against a mask having the same pattern as the electrode and the intermediate layer, etc.

However, the carrier and the mask for transferring the substrate may be exposed to the atmosphere during the transportation. In this case, the quality of the organic light emitting display device including the substrate on which the electrode, the intermediate layer, and the like are deposited may be degraded.

Disclosure of Invention

The technical problem of the present invention has been made in view of such a problem, and it is an object of the present invention to provide a deposition system including a vacuum chamber.

However, the technical problems to be solved by the present invention are not limited to the above-mentioned technical problems, and can be extended to various technical problems within a scope not departing from the spirit and the field of the present invention.

The deposition system of an embodiment for achieving the above object of the present invention may include: a chamber having an operation space maintained in a vacuum state; a first transfer device that circulates along a first path in the chamber and transfers a carrier; a second transfer device for reciprocating and transferring the mask along a second path in the chamber; a deposition device disposed in a deposition area along the first path within the chamber; a loading part disposed in the chamber; and a third transfer device connected to the first path and the loading part, the carrier being combined with a substrate in a substrate combining station of the first path and combined with the mask in a mask combining station where the first path and the second path meet, the carrier passing through the deposition area after being combined with the substrate and the mask and being separated from the mask in a mask separating station where the first path and the second path meet, and being separated from the substrate in a substrate separating station of the first path.

In one embodiment, the chamber may further include a substrate input port into which the substrate is input.

In one embodiment, the chamber may further include a substrate discharge port through which the substrate is discharged.

In one embodiment, a fourth transfer device for transferring the substrate to the inside of the chamber and transferring to the carrier may be further included.

In an embodiment, a fifth transfer device for receiving the transferred substrate from the carrier and removing the substrate from the chamber may be further included.

In one embodiment, the apparatus may further include a sixth transfer device connected to the first path and the loading portion, the sixth transfer device being configured to transfer at least one of the substrate, the carrier, and the mask stored in the loading portion to the first transfer device.

In an embodiment, at least one of the first to sixth transfer devices may include a roller.

In one embodiment, a fourth transfer device for transferring the substrate to the inside of the chamber and transferring to the carrier, and receiving the transferred substrate from the carrier and removing the substrate from the chamber may be further included.

In an embodiment, at least one of the first to fourth transfers may include a roller.

In an embodiment, an inspection part that inspects at least one of the substrate, the carrier, and the mask after the carrier combined with the substrate and the mask passes through the deposition area may be further included.

In an embodiment, the inspection portion may include a camera.

In one embodiment, the third transfer device may transfer at least one of the substrate, the carrier, and the mask to the loading portion according to an inspection result of the inspection portion.

In one embodiment, the loading part may include a gate for opening and closing the inner space.

In one embodiment, an exhaust port may be further included that is coupled to the chamber and maintains the chamber at a vacuum.

In one embodiment, the deposition apparatus may provide a metal species onto the substrate.

In one embodiment, the deposition device may provide an organic light emitting substance onto the substrate.

In one embodiment, the substrate may be bonded to a bottom surface of the carrier.

In one embodiment, the mask may be bonded to the bottom surface of the substrate.

In an embodiment, the substrate and the mask may be aligned onto the carrier using alignment marks.

The deposition system of an embodiment of the invention may include: a first transfer device that circulates along a first path in the chamber and transfers a carrier; a second transfer device for reciprocating and transferring the mask along a second path in the chamber; an exhaust port for maintaining a vacuum inside the chamber; and a loading part disposed in the chamber.

Thus, the deposition system can transfer the carrier and the mask, respectively. In addition, when a problem occurs in the deposition process, the deposition system can temporarily store the substrate, the carrier, the mask, and the like, which have the problem, in the loading unit, thereby performing the deposition process without interruption.

However, the effects of the present invention are not limited to the above-described effects, and can be extended to various effects without departing from the spirit and scope of the present invention.

Drawings

FIG. 1 is a top view of a deposition system illustrating one embodiment of the present invention.

Fig. 2 is a plan view illustrating a transfer device according to an embodiment of the present invention.

Fig. 3 is a plan view of a transfer device according to another embodiment of the present invention.

Fig. 4 is a plan view for explaining a loading part provided in the deposition system shown in fig. 1.

Fig. 5 is a sectional view taken along line I-I' of fig. 4.

Fig. 6 is a sectional view illustrating a display device manufactured by the deposition system shown in fig. 1.

Detailed Description

Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. The same reference numerals are used for the same constituent elements in the drawings, and redundant description thereof will be omitted.

Fig. 1 is a plan view showing a deposition system according to an embodiment of the present invention, and fig. 2 is a plan view showing a transfer device according to an embodiment of the present invention, showing a circulation path inside the deposition system shown in fig. 1.

Referring to fig. 1 and 2, the deposition system 1000 may include a first transfer device 10a, a second transfer device 10b, a third transfer device 10c, a fourth transfer device 10d, a fifth transfer device 10e, a sixth transfer device 10f, a deposition device 100, a carrier 200, a substrate 300, a mask 400, a gate 500, a loading portion 600, an exhaust port 700, a chamber 800, and an inspection portion 900.

The chamber 800 may include an operation space inside which a vacuum state may be maintained. The chamber 800 may include a substrate inlet ENT into which the substrate 300 is introduced. The chamber 800 may include a substrate discharge port EXIT through which the substrate 300 is discharged.

The exhaust port 700 may be connected to one side of the chamber 800. Although only one exhaust port 700 is connected to the chamber 800 in fig. 1, this is for example and more than two exhaust ports 700 may be connected to the chamber 800. In addition, the location where the exhaust port 700 is connected to the chamber 800 may be different. The exhaust port 700 may make the inner space of the chamber 800 a vacuum state. The exhaust port 700 may remove gas generated inside the chamber 800. For example, the exhaust port 700 may remove gases such as hydrogen, water vapor, carbon monoxide, and carbon dioxide from the interior of the chamber 800. Thereby, the fraction defective of the deposition process performed in the chamber 800 can be reduced. For example, it is possible to prevent poor quality of an Organic Light Emitting Diode (OLED) produced by the deposition process.

A location where the deposition apparatus 100 is disposed may be defined as a deposition area EA. At least one deposition apparatus 100 may be disposed in the deposition area EA. The deposition apparatus 100 may discharge a deposition substance. The deposition species may include an organic species. The organic substance may include a low molecular organic substance or a high molecular organic substance. In one embodiment, the low molecular organic substance may be used when a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, and the like are formed in a single structure or a composite structure. The low molecular organic substance may include copper phthalocyanine (copper phthalocyanine), N '-Di (naphthalene-1-yl) -N, N' -diphenyl-benzidine (N, N '-Di (naphthalene-1-yl) -N, N' -diphenyl-benzidine), tris (8-hydroxyquinoline) aluminum (tris-8-hydroxyquinoline aluminum), and the like. In an embodiment, the deposition species may include a metal species. For example, the metal substance may be used when forming an anode electrode and a cathode electrode. In one embodiment, the deposition system 1000 may emit deposition species by heating the deposition apparatus 100. The deposition system 1000 may further include a heating member for heating the deposition apparatus 100. For example, methods for heating the deposition apparatus 100 may include a resistance heating method, a high-frequency heating method, an electron beam heating method, a laser heating method, and the like. In order to heat the deposition substance included in the inside of the deposition apparatus 100, the deposition apparatus 100 may further include a metal material having a high melting point, such as tungsten, tantalum, or molybdenum. In one embodiment, the deposition apparatus 100 may be a metal plate that increases resistance by processing a metal material into a thin plate type.

In one embodiment, the fourth transfer device 10d may transfer the substrate 300 to the inside of the chamber 800 and to the carrier 200. The substrate 300 may be transferred from the outside of the chamber 800 to the inside of the chamber 800. The substrate 300 may be transferred to the inside of the chamber 800 through the substrate inlet ENT. The fourth transfer device 10d may transfer the substrate 300 to the first transfer device 10 a. The substrate 300 may be bonded to the carrier 200 in a substrate bonding station CA1 within the chamber 800. In one embodiment, the substrate 300 may be bonded to the bottom surface of the carrier 200. In one embodiment, the area of the carrier 200 may be larger than the area of the substrate 300 in order to be combined with the substrate 300. The carrier 200 may be transferred to the deposition area EA together with the substrate 300 bonded in the substrate bonding station CA 1. The carrier 200 and the substrate 300 may be transferred to the deposition area EA by a roller or the like disposed inside the chamber 800.

The carrier 200 may be circulated inside the chamber 800 by the first transfer device 10 a. The carrier 200 may circulate inside the chamber 800 after being combined with the substrate 300 in the substrate combining station CA 1. The path along which the first transfer device 10a moves may be defined as a first path. In addition, the carrier 200 may align (align) the substrate 300 and the mask 400. Alignment marks may be formed on the substrate 300 and the mask 400. The carrier 200 may align the substrate 300 and the mask 400 onto the carrier 200 using alignment marks formed on the substrate 300 and the mask 400.

As the chamber 800 maintains the vacuum state, the space where the carrier 200 is transferred may also maintain vacuum. This prevents foreign matter from adhering to the carrier 200 during the transfer of the carrier 200. In addition, the carrier 200 can be prevented from contacting the atmosphere during the transfer. Therefore, the fraction defective of the deposition process can be reduced.

The mask 400 may reciprocate inside the chamber 800 by the second transfer device 10 b. The mask 400 may circulate inside the chamber 800 after being combined with the carrier 200 in the mask combining station CA2 inside the chamber 800. The mask 400 may be bonded to the bottom surface of the substrate 300. A path to and from the second transfer device 10b may be defined as a second path. An area where one side of the second transfer device 10b meets the first transfer device 10a may be defined as the mask bonding station CA 2. Further, an area where the other side of the second transfer device 10b meets the first transfer device 10a may be defined as a mask separating station SA 1.

The mask 400 may have various patterns. For example, in order to deposit the deposition substance in a quadrangular shape, the mask 400 may have a pattern of the quadrangular shape. However, this is an example, and the mask 400 may have various patterns such as a circle, a diamond, a stripe, or a matrix.

As the carrier 200 is aligned with the substrate 300 and the mask 400, the deposition substance can be precisely deposited on the substrate 300 according to the pattern of the mask 400. That is, the deposition substance can be deposited on a desired portion of the substrate 300 according to the pattern of the mask 400. Thereby, the fraction defective of the deposition process can be reduced.

After the deposition process, the carrier 200, the substrate 300, and the mask 400 may be circulated in a combined state inside the chamber 800. The first transfer device 10a may transfer the carrier 200, the substrate 300, and the mask 400 along the first path.

The mask 400 may be separated from the carrier 200 in the mask separation station SA 1. That is, the mask 400 may be separated from the bottom surface of the substrate 400 in the mask separating station SA 1. The separated mask 400 may be transferred by the second transfer device 10 b. The separated mask 400 may be combined with the carrier 200 in the mask combining station CA 2.

As the chamber 800 maintains the vacuum state, the space where the mask 400 is transferred may also maintain vacuum. This prevents foreign matter from sticking to the mask 400 during the transfer of the mask 400. Further, the mask 400 can be prevented from contacting the atmosphere during the transfer. Therefore, the fraction defective of the deposition process can be reduced.

In one embodiment, the fifth transfer device 10e may receive the transferred substrate 300 from the carrier 200 and remove the substrate 300 from the chamber 800. After separating the mask 400, the carrier 200 and the substrate 300 may be separated in a substrate separation station SA2 within the chamber 800. That is, the substrate 300 may be carried out to the outside of the chamber 800 after the deposition material required for deposition through the deposition process. The first transfer device 10a may transfer the substrate 300 to the fifth transfer device 10 e. The substrate 300 may be discharged to the outside of the chamber 800 through the substrate discharge port EXIT by the fifth transfer device 10 e. The carrier 200 may be transferred in a first path by the first transfer device 10a after being separated from the substrate 300.

The chamber 800 may include the gate 500 and the loading part 600. The loading part 600 may be a space for temporarily storing defective products in which problems (e.g., cracks, contact with foreign substances, etc.) occur during the deposition process. In one embodiment, when the problem occurs in the substrate 300, the loading unit 600 may temporarily store the substrate 300. In another embodiment, in the case where the problem occurs in the carrier 200, the loading part 600 may temporarily store the carrier 200. In still another embodiment, in the case where the problem occurs in the mask 400, the loading part 600 may temporarily store the mask 400. In another embodiment, when the problem occurs in the substrate 300, the loading unit 600 may temporarily store all of the carrier 200, the substrate 300, and the mask 400 in order to temporarily store the substrate 300. That is, when the problem occurs in at least one of the carrier 200, the substrate 300, and the mask 400, the loading unit 600 may temporarily store the at least one of the carrier 200, the substrate 300, and the mask 400 in which the problem occurs.

In one embodiment, the third transfer device 10c may be connected to the first path and the loading portion 600. The third transfer device 10c may connect the loading unit 600 and the first transfer device 10 a. The third transfer device 10c may transfer at least one of the carrier 200, the substrate 300, and the mask 400, in which the problem occurs, to the loading portion 600. The gate 500 may be opened in order to transfer at least one of the carrier 200, the substrate 300, and the mask 400, in which the problem occurs.

In one embodiment, the sixth transfer device 10f may be connected to the first path and the loading portion 600. The sixth transfer device 10f may connect the loading unit 600 and the first transfer device 10 a. The sixth transfer device 10f may transfer at least one of the carrier 200, the substrate 300, and the mask 400 to the first transfer device 10 a. The shutter 500 may be opened in order to transfer at least one of the carrier 200, the substrate 300, and the mask 400.

Although the loading part 600 is illustrated as being disposed inside the chamber 800, it is not limited thereto. For example, the loading part 600 may be disposed outside the chamber 800.

In an embodiment, the deposition system 1000 may include the inspection portion 900. The inspection part 900 may include a camera. The inspection part 900 may confirm whether a problem occurs in the deposition process. In one embodiment, the inspection part 900 may confirm whether the deposition material is properly patterned on the substrate 300. In one embodiment, the inspection part 900 may inspect at least one of the substrate 300, the carrier 200, and the mask 400 after the carrier 200 combined with the substrate 300 and the mask 400 passes through the deposition area EA.

When the problem does not occur, the shutter 500 may be in a closed state. The carrier 200 may be continuously transferred in a state of being coupled to the substrate 300 and the mask 400.

Referring to fig. 3, the deposition system 1000 may include first to

fourth transfer devices

10a, 10b, 10c, 10 d. The first transfer device 10a may transfer the carrier 200 along the first path within the chamber 800. The second transfer device 10b may transfer the mask 400 along the second path. The third transfer device 10c may connect the first transfer device 10a and the loading portion 600. The third transfer device 10c may shuttle and transfer at least one of the carrier 200, the substrate 300, and the mask 400 between the loading part 600 and the first transfer device 10 a. The fourth transfer device 10d may transfer the substrate 300 to the inside of the chamber 800 and to the carrier 200, and receive the transferred substrate 300 from the carrier 200 and remove the substrate 300 from the chamber 800.

Fig. 4 is a plan view for explaining a loading part included in the deposition apparatus shown in fig. 1.

Referring to fig. 4, the loading part 600 may include the shutter 500 for opening and closing the inner space. When the problem occurs in at least one of the carrier 200, the substrate 300, and the mask 400, the shutter 500 may be opened. In one embodiment, the carrier 200 may be subject to cracking 210. In this case, the carrier 200 may be transferred to the loading portion 600. Thus, the deposition process can be continued without stopping. Although the occurrence of the crack 210 on the carrier 200 is illustrated in fig. 4, this is by way of example and not limitation. For example, the crack 210 may occur on the substrate 300. In another example, a foreign substance may be attached to the mask 400.

When a problem occurs in at least one of the carrier 200, the substrate 300, and the mask 400, at least one of the carrier 200, the substrate 300, and the mask 400 is temporarily stored, so that the deposition process is not interrupted in order to cope with the problem, and the yield of the deposition process can be increased.

Fig. 5 is a sectional view taken along line I-I' of fig. 4.

Referring to fig. 4 and 5, the substrate 300 may be bonded to the bottom surface of the carrier 200. The mask 400 may be bonded to the bottom surface of the substrate 300. The carrier 200 may pass through the deposition area EA after aligning the substrate 300 and the mask 400. In the deposition area EA, the deposition substance may be deposited on the substrate 300 by the deposition apparatus 100.

The deposition apparatus 100 may store the deposition substance and include a nozzle for discharging the deposition substance. In one embodiment, the deposition material may include an organic material for an organic light emitting layer. For example, the organic substance may include a hole injection layer deposition substance, a hole transport layer deposition substance, an electron injection layer deposition substance, and the like. However, this is an example, and the deposition substance that the deposition apparatus 100 can include is not limited thereto. In another embodiment, the deposition species may include a metal species for an electrode. For example, the metal substance may include a deposition substance for an anode electrode, a deposition substance for a cathode electrode, and the like.

The carrier 200, the substrate 300, and the mask 400 may be transferred by rollers. The rollers may be disposed between the deposition apparatus 100 and the carrier 200, the substrate 300, and the mask 400. The roller may transfer the substrate 300 input to the inside of the chamber 800 toward the deposition area EA. The roller may transfer one or more of the carrier 200, the substrate 300, and the mask 400 to the loading part 600. In one embodiment, the first to

sixth transfer devices

10a, 10b, 10c, 10d, 10e, 10f may be rollers. In still another embodiment, the first to

sixth transfer devices

10a, 10b, 10c, 10d, 10e, 10f may be an endless belt. However, the first to

sixth transfer devices

10a, 10b, 10c, 10d, 10e, and 10f according to the present invention are not limited thereto, and may further include a device capable of transferring the carrier 200, the substrate 300, and the mask 400.

However, the roller may not be provided in the deposition area EA where the deposition material is discharged from the deposition apparatus 100. Thereby, the deposition apparatus 100 can deposit the deposition substance on the substrate 300 without being restricted by the roller.

Fig. 6 is a sectional view showing a display device manufactured by the deposition apparatus shown in fig. 1.

Referring to fig. 6, the display device 1100 may include a base substrate 1110, a buffer layer 1120, a pixel transistor 1130, a gate insulating layer 1140, an interlayer insulating layer 1150, a via insulating layer 1160, a pixel defining film PDL, and an organic light emitting diode OLED. The pixel transistor 1130 may include an active layer 1131, a gate electrode 1132, a source electrode 1133, and a drain electrode 1134. The organic light emitting diode OLED may include a lower electrode 1170, an intermediate layer 1180, and an upper electrode 1190.

The base substrate 1110 may be formed of a transparent resin substrate having flexibility. The base substrate 1110 may have a structure in which a first organic layer, a first barrier layer, a second organic layer, and a second barrier layer are sequentially stacked. The first barrier layer and the second barrier layer may comprise an inorganic substance. The base substrate 1110 may also include a quartz substrate, a synthetic quartz (synthetic quartz) substrate, a calcium fluoride (calcium fluoride) substrate, a fluorine-doped quartz (F-doped quartz) substrate, a soda lime (soda lime) glass substrate, an alkali-free (non-alkali) glass substrate, or the like.

The buffer layer 1120 may be disposed on the base substrate 1110. The buffer layer 1120 may be integrally disposed on the base substrate 1110. The buffer layer 1120 may prevent a phenomenon in which metal atoms or impurities are diffused from the base substrate 1110 to the pixel transistor 1130. In addition, in the case where the surface of the base substrate 1110 is not uniform, the buffer layer 1120 may function to improve the flatness of the surface of the base substrate 1110.

The active layer 1131 may be disposed on the buffer layer 1120. In one embodiment, the active layer 1131 may include an oxide species. In another embodiment, the active layer 1131 may include a silicon species.

The gate insulating layer 1140 may be disposed on the buffer layer 1120. In one embodiment, the gate insulating layer 1140 may cover the active layer 1131. The gate insulating layer 1140 may have a substantially flat upper surface without forming a step around the active layer 1131. In another embodiment, the gate insulating layer 1140 may cover the active layer 1131 on the buffer layer 1120 and be disposed along the contour of the active layer 1131 with a uniform thickness.

The gate electrode 1132 may be disposed on the gate insulating layer 1140 to overlap the active layer 1131. The gate electrode 1132 may include a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive substance, and the like. A portion of the active layer 1131 overlapping the gate electrode 1132 may be a channel region.

The interlayer insulating layer 1150 may be disposed on the gate insulating layer 1140. The interlayer insulating layer 1150 may cover the gate electrode 1132 on the gate insulating layer 1140. The interlayer insulating layer 1150 may include a silicon compound, a metal oxide, or the like.

The source electrode 1133 and the drain electrode 1134 may be disposed on the interlayer insulating layer 1150. The source electrode 1133 may be connected to the active layer 1131 through a first contact hole formed by removing the gate insulating layer 1140 and a portion of the interlayer insulating layer 1150, and the drain electrode 1134 may be connected to the active layer 1131 through a second contact hole formed by removing the gate insulating layer 1140 and a portion of the interlayer insulating layer 1150. In one embodiment, the source electrode 1133 may fill the first contact hole. The drain electrode 1134 may fill the second contact hole. The source electrode 1133 and the drain electrode 1134 may respectively include a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive substance, and the like. These substances may be used alone or in combination with each other.

Thus, the pixel transistor 1130 including the active layer 1131, the gate electrode 1132, the source electrode 1133, and the drain electrode 1134 may be provided.

The via insulating layer 1160 may be disposed on the interlayer insulating layer 1150. The via insulating layer 1160 may cover the source electrode 1133 and the drain electrode 1134 on the interlayer insulating layer 1150. For example, the via hole insulating layer 1160 may be provided with a relatively thick thickness. In this case, the via insulating layer 1160 may have a substantially planar upper surface. To achieve a flat upper surface of the via insulating layer 1160, a planarization process may be added to the via insulating layer 1160. Alternatively, the via insulating layer 1160 may be disposed with a uniform thickness along the contour of the source electrode 1133 and the drain electrode 1134. The via hole insulating layer 1160 may be formed of an organic substance or an inorganic substance.

The lower electrode 1170 can be disposed on the via insulation layer 1160. The lower electrode 1170 may be connected to the drain electrode 1134 through a third contact hole formed by removing a portion of the via insulating layer 1160. That is, the lower electrode 1170 may be electrically connected to the pixel transistor 1130 through the third contact hole.

For example, the lower electrode 1170 may include a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive substance, and the like. The lower electrode 1170 may include gold (Au), silver (Ag), aluminum (Al), platinum (Pt), nickel (Ni), titanium (Ti), palladium (Pd), magnesium (Mg), calcium (Ca), lithium (Li), chromium (Cr), tantalum (Ta), molybdenum (Mo), scandium (Sc), neodymium (Nd), iridium (Ir), an aluminum-containing alloy, aluminum nitride (AlN)_x) Silver-containing alloy, tungsten (W), tungsten nitride (WN)_x) Copper-containing compoundAlloy, molybdenum-containing alloy, titanium nitride (TiN)_x) Tantalum nitride (TaN)_x) Strontium ruthenium oxide (SrRu)_xO_y) Zinc oxide (ZnO)_x) Indium Tin Oxide (ITO), tin oxide (SnO)_x) Indium oxide (InO)_x) Gallium oxide (GaO)_x) Indium Zinc Oxide (IZO), and the like. These substances may be used alone or in combination with each other. In one embodiment, the lower electrode 1170 can be an anode electrode. In another embodiment, the lower electrode 1170 can be a cathode electrode.

The pixel defining film PDL may be disposed on the via insulating layer 1160 and may expose at least a portion of the lower electrode 1170. The pixel defining film PDL may be formed of an organic substance or an inorganic substance.

The intermediate layer 1180 may be disposed on the lower electrode 1170 with at least a portion exposed through the pixel definition film PDL. The intermediate layer 1180 may emit red, green, blue, or the like. The intermediate layer 1180 may include a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, and the like.

The upper electrode 1190 may be disposed on the pixel definition film PDL and the intermediate layer 1180. The upper electrode 1190 can comprise the same species as the lower electrode 1170. In an embodiment, the upper electrode 1190 may be the cathode electrode. In another embodiment, the upper electrode may be the anode electrode.

Thus, the organic light emitting diode OLED including the lower electrode 1170, the intermediate layer 1180, and the upper electrode 1190 may be provided.

In one embodiment, the deposition system 1000 may include a deposition substance for forming the intermediate layer 1180 shown in fig. 6. Accordingly, the deposition process may be a process for forming the intermediate layer 1180.

In another embodiment, the deposition system 1000 can include deposition species for forming the lower electrode 1170 and the upper electrode 1190 shown in fig. 6. Accordingly, the deposition process may be a process for forming the lower electrode 1170 and/or the upper electrode 1190.

While the present invention has been described with reference to the exemplary embodiments thereof, it will be understood by those skilled in the art that the present invention may be modified and changed in various ways without departing from the spirit and scope of the present invention as set forth in the appended claims.

Industrial applicability

The present invention can be applied to a deposition apparatus and a method of manufacturing a display apparatus using the deposition apparatus. For example, the present invention may be applied in high resolution smart phones, mobile phones, smart tablets, smart watches, tablet computers, car navigation systems, televisions, computer monitors or notebook computers, etc.

Description of the reference numerals

1000: the deposition system 100: deposition apparatus

200: carrier 300: substrate

400: mask 500: gate valve

600: the loading section 700: exhaust port

800: chamber 900: inspection section

Claims

1. A deposition system, comprising:

a chamber having an operation space maintained in a vacuum state;

a first transfer device that circulates along a first path in the chamber and transfers a carrier;

a second transfer device for reciprocating and transferring the mask along a second path in the chamber;

a deposition device disposed in a deposition area along the first path within the chamber;

a loading part disposed in the chamber; and

a third transfer device connected to the first path and the loading unit,

the carrier is bonded with a substrate in a substrate bonding station of the first path and bonded with the mask in a mask bonding station where the first path and the second path meet, passes through the deposition area after being bonded with the substrate and the mask, and is separated from the mask in a mask separating station where the first path and the second path meet, and is separated from the substrate in a substrate separating station of the first path.

2. The deposition system of claim 1,

the chamber further includes a substrate input port into which the substrate is input.

3. The deposition system of claim 2,

the chamber further includes a substrate discharge port through which the substrate is discharged.

4. The deposition system of claim 1 or 3,

further comprising a fourth transfer device for transferring the substrate to the interior of the chamber and to the carrier.

5. The deposition system of claim 4 wherein the substrate is a substrate,

further comprising a fifth transfer device for receiving the transferred substrate from the carrier and removing the substrate from the chamber.

6. The deposition system of claim 5 wherein the substrate is a substrate,

further comprising a sixth transfer device connected to the first path and the loading portion,

the sixth transfer device is configured to transfer at least one of the substrate, the carrier, and the mask stored in the loading unit to the first transfer device.

7. The deposition system of claim 6,

at least one of the first to sixth transfer devices includes a roller.

8. The deposition system of claim 1 or 3,

further comprising a fourth transfer device for transferring the substrate to the interior of the chamber and to the carrier, and receiving the transferred substrate from the carrier and removing the substrate from the chamber.

9. The deposition system of claim 8,

at least one transfer device of the first to fourth transfer devices includes a roller.

10. The deposition system of claim 1 wherein the substrate is a substrate,

further comprising an inspection part inspecting at least one of the substrate, the carrier, and the mask after the carrier combined with the substrate and the mask passes through the deposition area.