CN113611781B - High-power flip LED chip - Google Patents
High-power flip LED chip Download PDFInfo
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- CN113611781B CN113611781B CN202110810831.5A CN202110810831A CN113611781B CN 113611781 B CN113611781 B CN 113611781B CN 202110810831 A CN202110810831 A CN 202110810831A CN 113611781 B CN113611781 B CN 113611781B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
Abstract
The invention discloses a high-power flip LED chip which comprises a sapphire substrate, N-type layers, P-type layers, insulating reflecting layers, transparent conducting layers, front metal layers, metal electrodes and back metal layers, wherein the N-type layers horizontally extend to the outer ends far away from the P-type layers, the insulating reflecting layers cover the P-type layers and the N-type layers near the P-type layers, the transparent conducting layers are arranged on the P-type layers in openings of the insulating reflecting layers, the transparent conducting layers protrude onto the insulating reflecting layers, the front metal layers are respectively covered on each transparent conducting layer, the outer end of the last N-type layer is also provided with one metal electrode, and the other adjacent back metal layers extend to be connected with the outer ends of the previous N-type layers. The high-power flip LED chip can be directly input with higher voltage to carry out high-power operation, and the flip luminous light emitting effect is good and the heat dissipation performance is high.
Description
Technical Field
The invention relates to the technical field of LED chips, in particular to a high-power flip LED chip.
Background
With the rapid development of the LED technology and the gradual improvement of the LED lighting effect, the application of the LED is more and more extensive, the LED is gradually developed from a single LED chip to a micro LED dot matrix, and the structure of the LED chip includes a substrate, a P-type semiconductor layer and an N-type semiconductor layer which are arranged on the substrate, the input voltage of the current LED chip is generally between 2V and 5V, and when most lamps are powered on, 220V mains supply needs to be subjected to low-voltage transformation conversion, wherein the loss is naturally caused, the high power needs to be realized through low-voltage large current, so the heating loss of the wire is more remarkable, the heating is very high when the high power is operated, the light is difficult to be well emitted in the flip chip for a long time, the light emitting effect is not good, and the improvement is needed.
Disclosure of Invention
The purpose of the invention is: the high-power flip LED chip can be operated by inputting higher voltage, and is good in light emitting effect and heat dissipation performance.
In order to solve the technical problem, the invention provides a high-power flip LED chip.
A high-power flip LED chip comprises a sapphire substrate, N-type layers, P-type layers, insulating reflecting layers, transparent conducting layers, front metal layers, metal electrodes and back metal layers according to a process sequence, wherein a plurality of N-type layers are distributed on the sapphire substrate, one P-type layer is arranged on each N-type layer, the outer end of each N-type layer far away from the P-type layer horizontally extends, each insulating reflecting layer covers the P-type layer and the N-type layer near the P-type layer, an opening is formed in the top surface of each P-type layer, each transparent conducting layer is arranged on the P-type layer in the opening of each insulating reflecting layer, each transparent conducting layer protrudes out of each insulating reflecting layer, the front metal layers are respectively covered on each transparent conducting layer, the front metal layer at the front is extended to form one metal electrode, a metal electrode is also arranged at the outer end of the last N-type layer, the front metal layers adjacent to the back metal layers are extended to be connected with the outer end of the N at the front metal layers, the back metal layers are arranged on the sapphire substrate, and holes corresponding to the P-type metal layers are formed in the back metal layers.
In a preferred embodiment of the present invention, the opening of the back metal layer is conical, and a wider side of the opening faces the P-type layer.
In a preferred embodiment of the present invention, the sapphire substrate is a thinned substrate.
As a preferable aspect of the present invention, the size of the opening of the insulating reflective layer on the top surface of the P-type layer is smaller than the size of the top surface of the P-type layer.
In a preferred embodiment of the present invention, the insulating reflective layer is a DBR layer made of an insulating material.
As a preferable scheme of the present invention, the material of the transparent conductive layer is ITO, and the material of the back metal layer is one or more of Cr, al, ti, pt, and Au.
As a preferred embodiment of the present invention, the front metal layer and the metal electrode are made of an AuSn layer, an Au layer, a Ni layer, a Ti layer, an AlCu layer, and a Cr layer, which are sequentially disposed from top to bottom.
As a preferable aspect of the present invention, the front metal layer extends downward along a sidewall of the P-type layer to cover the insulating conductive layer in a surrounding manner.
Compared with the prior art, the high-power flip LED chip has the beneficial effects that: the LED lamp can be directly input with higher voltage to operate at high power, and has the advantages of good light emitting effect of inverted lighting, high heat dissipation performance, and capability of more stably and continuously emitting light.
Drawings
FIG. 1 is a front view of a high power flip-chip LED chip configuration according to one embodiment of the present invention;
FIG. 2 isbase:Sub>A schematic cross-sectional view taken along line A-A of FIG. 1;
FIG. 3 is a schematic cross-sectional view taken along line B-B of FIG. 1;
FIG. 4 is a schematic diagram of the front metal layer and the metal electrode in one embodiment of the present invention;
in the figure, 1, a sapphire substrate; 2. an insulating reflective layer; 3. a transparent conductive layer; 4. a front metal layer; 5. a metal electrode; 6. a back side metal layer.
Detailed Description
The following detailed description of the present invention is provided in connection with the accompanying drawings and examples. The following examples are intended to illustrate the invention but are not intended to limit the scope of the invention.
In the description of the present invention, it is to be understood that the terms "mounted," "connected," and "connected" are used broadly and are defined as, for example, either fixedly connected, detachably connected, or integrally connected, unless otherwise explicitly stated or limited; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In the description of the present invention, it is to be further understood that the terms "upper", "lower", "left", "right", "front", "rear", "top", "bottom", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are only for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the machine or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. It should be understood that the terms "first", "second", etc. are used herein to describe various information, but the information should not be limited to these terms, which are used only to distinguish one type of information from another. For example, "first" information may also be referred to as "second" information, and similarly, "second" information may also be referred to as "first" information, without departing from the scope of the present invention.
Referring to fig. 1-3, a high power flip-chip LED chip according to an embodiment of the present invention includes, in a process order, a sapphire substrate 1, N-type layers, P-type layers, an insulating reflective layer 2, transparent conductive layers 3, a front metal layer 4, metal electrodes 5, and a back metal layer 6, where a plurality of N-type layers are distributed on the sapphire substrate 1, each N-type layer is provided with one P-type layer to form a light emitting unit, a surface of the P-type layer is smaller than a surface of the N-type layer, the N-type layer horizontally extends to an outer end far away from the P-type layer, the insulating reflective layer 2 covers the P-type layers and the N-type layers near the P-type layers, the insulating reflective layer 2 is provided with an opening on a top surface of the P-type layer, the transparent conductive layer 3 is provided on the P-type layer in the opening of the insulating reflective layer 2, the transparent conductive layer 3 protrudes out of the insulating reflective layer 2, each transparent conductive layer 3 is covered with the front metal layer 4, the front metal layer 4 on the front light emitting unit at the front side extends to form a metal electrode 5, the outer end of the last N-type light emitting unit is provided with an opening corresponding to the back metal layer, and the front metal layer 6 is connected to the sapphire substrate in series; the P-type layer and the N-type layer of each light-emitting unit are generated on the sapphire substrate 1 and are correspondingly etched, then the insulating reflecting layer 2 is plated to carry out covering protection and realize light reflection, in addition, the insulating reflecting layer 2 leaves a way on the top surface of the P-type layer and the outer end of the N-type layer, so the transparent conducting layer 3 is plated in an opening of the insulating reflecting layer 2 to conduct electricity and transmit light with the P-type layer, then the front metal layer 4 and the transparent conducting layer 3 are plated to be attached, abutted and electrified, the front metal layer 4 is simultaneously shielded on the top surface and the side wall of the P-type layer to block the light transmission of the top surface and prevent lateral light divergence, and an axial light outlet is reserved on the back surface of the sapphire substrate 1 by matching with the back metal layer 6 through an opening which is correspondingly arranged at the chip position of the P-type layer, so that the light-emitting effect of the LED chip which is inversely arranged on the back surface and is highly concentrated is formed, meanwhile, more heat-radiating areas are formed by the front metal layer 4 and the back metal layer 6, and the heat-radiating areas of the chip when the chip is in high-power operation are effectively improved; through connecting 5 input voltage of two metal electrodes respectively during the installation chip, each luminescence unit generally bears the voltage and improves, thereby reduce the loss that voltage conversion produced, it is luminous to realize LED's high power operation well, the light-emitting is effectual high-efficient again, durable, this kind of structure carries out the conductive connection through the corresponding cover of the positive metal level 4 of the horizontal extension cooperation of N type layer in addition, thereby realize the series connection of each luminescence unit, the technology degree of difficulty has been reduced, let insulating reflecting layer 2 and positive metal level 4 cover or cladding better simultaneously.
Referring to fig. 2 and 3, for example, the opening of the back metal layer 6 is conical, and the wider side of the opening faces the P-type layer, so that the divergent light emitted from the back of the sapphire substrate 1 is further reduced through the conical structure of the opening, and the output effect of the light is further improved.
Illustratively, the sapphire substrate 1 is a thinned substrate, and the light efficiency is improved as much as possible by reducing the thickness of the sapphire substrate 1, and meanwhile, the heat dissipation is assisted.
Referring to fig. 2 and 3, illustratively, the size of the opening of the insulating reflective layer 2 on the top surface of the P-type layer is smaller than the size of the top surface of the P-type layer, so that the top surface of the P-type layer is well covered and protected by the insulating reflective layer 2, and the transparent conductive layer 3 is plated to be conductive with the P-type layer.
Illustratively, the insulating reflective layer 2 is a DBR layer made of an insulating material, which can protect the P-type layer and the N-type layer and can obtain a high reflectivity with a small number of layers.
Illustratively, the material of the transparent conductive layer 3 is ITO, and the material of the back metal layer 6 is one or more of Cr, al, ti, pt, and Au.
Illustratively, the front metal layer 4 and the metal electrode 5 are made of an AuSn layer, an Au layer, a Ni layer, a Ti layer, an AlCu layer, and a Cr layer, which are sequentially disposed from top to bottom, the Cr layer is increased to make better contact with the transparent conductive layer 3 or the epitaxial layer, the AlCu layer has high reflectivity during use, and the function of slowing down Al migration, the two layers make better contact and have high AlCu reflectivity, so that the brightness is effectively improved, the AuSn layer serves as a welding layer, and the Ni layer is added in the middle to effectively block Sn from permeating below the electrode.
Referring to fig. 2 and 3, illustratively, the front metal layer 4 extends down the sidewalls of the P-type layer to cover the insulating conductive layer 3 in an encircling manner, so as to better block lateral light scattering and light leakage on the flip-chip, which also requires a higher process.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and substitutions can be made without departing from the technical principle of the present invention, and these modifications and substitutions should also be regarded as the protection scope of the present invention.
Claims (6)
1. A high power flip-chip LED chip which characterized in that: the sapphire substrate comprises a sapphire substrate, N-type layers, P-type layers, insulating reflecting layers, transparent conducting layers, front metal layers, metal electrodes and back metal layers, wherein a plurality of N-type layers are distributed on the sapphire substrate, one P-type layer is arranged on each N-type layer, the outer end of each P-type layer is far away from each N-type layer in a horizontally extending mode, each insulating reflecting layer covers the P-type layer and the N-type layer near the P-type layer, an opening is formed in the top surface of each P-type layer, each transparent conducting layer is arranged in the corresponding opening of each insulating reflecting layer, each transparent conducting layer protrudes out of each N-type layer, each transparent conducting layer is evenly covered with the corresponding front metal layer, the front metal layer extends to form one metal electrode, the last metal electrode is also arranged at the outer end of each N, the other adjacent back metal layers extend to be connected with the outer end of the corresponding N-type layer, the back metal layers are arranged on the back of the sapphire substrate, the back metal layers are provided with holes corresponding to the back metal layers, the front metal layers extend downwards, and the back metal layers cover the wide side walls of the P-type layers.
2. The high power flip LED chip of claim 1, wherein: the sapphire substrate is a thinned substrate.
3. The high power flip LED chip of claim 1, wherein: the size of the opening of the insulating reflecting layer on the top surface of the P-type layer is smaller than that of the top surface of the P-type layer.
4. The high power flip LED chip of claim 1, wherein: the insulating reflecting layer is a DBR layer made of insulating materials.
5. The high power flip LED chip of claim 1, wherein: the transparent conducting layer is made of ITO, and the back metal layer is made of one or more of Cr, al, ti, pt and Au.
6. The high power flip LED chip of claim 1, wherein: the front metal layer and the metal electrode are made of AuSn layers, au layers, ni layers, ti layers, alCu layers and Cr layers which are sequentially arranged from top to bottom.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110810831.5A CN113611781B (en) | 2021-07-16 | 2021-07-16 | High-power flip LED chip |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110810831.5A CN113611781B (en) | 2021-07-16 | 2021-07-16 | High-power flip LED chip |
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| CN113611781A CN113611781A (en) | 2021-11-05 |
| CN113611781B true CN113611781B (en) | 2022-10-14 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200807773A (en) * | 2006-07-18 | 2008-02-01 | Mitsubishi Electric Corp | Semiconductor light-emitting diode |
| CN104106184A (en) * | 2012-02-06 | 2014-10-15 | 国立大学法人京都大学 | Semiconductor light emitting element |
| CN104701307A (en) * | 2014-12-06 | 2015-06-10 | 广州南科集成电子有限公司 | Planar high-voltage serial LED (light-emitting diode) integrated chip and manufacturing method |
| CN107068826A (en) * | 2017-01-18 | 2017-08-18 | 中国科学院半导体研究所 | LED chip of bloom outgoing efficiency and preparation method thereof |
| CN112951965A (en) * | 2021-03-15 | 2021-06-11 | 广东德力光电有限公司 | High-power flip high-voltage chip and manufacturing method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6946788B2 (en) * | 2001-05-29 | 2005-09-20 | Toyoda Gosei Co., Ltd. | Light-emitting element |
| KR101668622B1 (en) * | 2015-02-10 | 2016-10-26 | 울산과학기술원 | Method of the pyramid-shaped light emitting diode using a selective electrode |
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- 2021-07-16 CN CN202110810831.5A patent/CN113611781B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200807773A (en) * | 2006-07-18 | 2008-02-01 | Mitsubishi Electric Corp | Semiconductor light-emitting diode |
| CN104106184A (en) * | 2012-02-06 | 2014-10-15 | 国立大学法人京都大学 | Semiconductor light emitting element |
| CN104701307A (en) * | 2014-12-06 | 2015-06-10 | 广州南科集成电子有限公司 | Planar high-voltage serial LED (light-emitting diode) integrated chip and manufacturing method |
| CN107068826A (en) * | 2017-01-18 | 2017-08-18 | 中国科学院半导体研究所 | LED chip of bloom outgoing efficiency and preparation method thereof |
| CN112951965A (en) * | 2021-03-15 | 2021-06-11 | 广东德力光电有限公司 | High-power flip high-voltage chip and manufacturing method thereof |
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| CN113611781A (en) | 2021-11-05 |
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