CN113611758A - Solar cell with nano-scale line width grid electrode and preparation method thereof - Google Patents
Solar cell with nano-scale line width grid electrode and preparation method thereof Download PDFInfo
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
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- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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Abstract
The invention discloses a solar cell with a grid electrode with a nanometer line width, which comprises a substrate, wherein a transparent antireflection layer is arranged above an illuminated surface of the substrate, grid electrode channels and electrode window areas with the nanometer line width are prepared on the surface of the transparent antireflection layer through a nanoimprint technology, the grid electrode channels comprise electrode channels which are distributed longitudinally and transversely and are interconnected at a certain interval, the grid electrode channels and the electrode window areas penetrate through the transparent antireflection layer and are interconnected, and electrodes made of metal materials are filled in the grid electrode channels and the electrode window areas. The grid electrode channel and the electrode window area with the nanometer line width are prepared on the surface of the transparent anti-reflection layer through nanoimprint lithography by utilizing the nanoimprint lithography technology, the manufacturing process is simple, the manufacturing cost is greatly reduced, and the production efficiency is improved. The usage amount of the front silver paste of the solar cell can be effectively reduced, the uniformity of the current density of the solar cell is improved, and the photoelectric conversion efficiency of the solar cell is greatly improved.
Description
Technical Field
The invention belongs to the technical field of solar cells, and particularly relates to a solar cell with a grid electrode with a nanometer line width and a preparation method thereof.
Background
How to improve the photoelectric conversion efficiency of a solar cell module, how to reduce the usage amount of silver paste used for preparing an electrode to reduce the preparation cost of a cell, and how to improve the service life of a solar cell has become a technical bottleneck commonly encountered in the industry, and many researchers in the industry make much effort to the solar cell module.
In a traditional crystalline silicon solar cell, silver paste grid line electrodes are used in large quantities. And obtaining the silver paste grid line electrode through screen printing and subsequent high-temperature (800 ℃) annealing. The silver paste grid electrode used by the traditional crystalline silicon solar cell is prepared by a screen printing process, the current process limit resolution line width size of the silver paste grid electrode prepared by the screen printing is more than 20um, and then the silver paste grid electrode is easy to break in printing, the large-size grid line electrode with the line width of more than 20um causes an obvious shadow effect on the light receiving surface of the cell, and the light receiving surface loss of the light receiving surface caused by electrode coverage is increased; and the grid line intervals are very large, in order to obtain better conductivity, the surface emitter of the battery adopts n + + heavy doping, so that the carrier recombination probability of the surface emitter is obviously increased, the short-wave absorption rate of the battery is reduced, and the performance of the whole emitter and the efficiency of the battery are reduced. The theoretical efficiency upper limit value of the monocrystalline silicon solar cell reaches 33 percent, the efficiency of the existing industrialized cell is about 16 to 25 percent, and the structural design of the counter electrode and the improvement of the electrode preparation process are the main reasons of the difference source of the efficiency of the existing industrialized cell. The structural design of the electrodes also affects the power density and electrical performance of the cell, and thus the life of the cell sheet. In addition, the excessive use of silver paste also greatly increases the preparation cost of the battery.
Chinese patent No. CN 103367541 a discloses a method for preparing a silver wire grid electrode of a solar cell based on a photolithographic mask method and a liquid phase method, which comprises: (1) manufacturing a photoresist template, namely uniformly spin-coating photoresist on the surface of a silicon substrate by a spin coating method, and copying a designed specific pattern on a mask plate onto the silicon substrate after the steps of exposure, development, hardening and the like; (2) depositing Ag particles by a chemical method, and depositing the Ag particles on the photoresist template by an electrochemical reaction method; (3) removing the photoresist template and removing the photoresist by using a photoresist film remover; (4) the Ag particles which are annealed, sintered and arranged tightly are heated at high temperature and are communicated with each other to form an Ag electrode. The method adopts the traditional semiconductor chip photoetching process, adopts the conventional glue coating, prebaking, exposing, developing, rinsing, film hardening, depositing, photoresist removing and stripping process steps, can use photoetching machine equipment, and has higher manufacturing cost. The size of the prepared electrode still stays at the micron-sized 8um, the line width size of the photoresist mask stripe also stays at the micron-sized 10um-20um, and only the granularity size of silver for deposition reaches between 1nm-10um, the granularity size has no relation with the line width size of the electrode, so the line width of the whole process still stays at the micron-sized.
The nanoimprint technology is well established, but the technology is mainly applied to the preparation of nano-patterned sapphire substrates in the LED industry. For the preparation of a nanostructure antireflection layer of a solar cell and the preparation of a nano-scale line width electrode, no technology is provided for processing by adopting a nanoimprint technology, and particularly, the nanoimprint technology has no any prediction on the improvement of the efficiency of the solar cell and the saving of slurry used by the electrode.
Disclosure of Invention
In view of the above technical problems, the present invention aims to: the solar cell with the grid electrode with the nanometer line width and the preparation method thereof are provided, the grid electrode channel with the nanometer line width and the positive electrode window area are prepared on the surface of the transparent anti-reflection layer by nanoimprint lithography, the manufacturing process is simple, the usage amount of the positive silver slurry of the solar cell can be effectively reduced due to the nanometer line width, the manufacturing cost is greatly reduced, and the production efficiency is improved. The nanometer line width grid electrode prepared by nanoimprint can also effectively improve the uniformity of the current density of the solar cell, thereby improving the reliability and prolonging the service life of the cell. The nanoscale patterned antireflection structure improves the light quantum absorption efficiency, the nanoscale line width grid electrode reduces the electrode coverage loss of the illuminated surface, and the photoelectric conversion efficiency of the solar cell is greatly improved.
The technical scheme of the invention is as follows:
the utility model provides a solar cell with nanometer line width grid electrode, includes the substrate, the sensitive surface top of substrate is provided with transparent antireflection coating, grid electrode channel and the electrode window district of nanometer line width are prepared through the nanoimprint technology on transparent antireflection coating surface, the grid electrode channel includes and is the electrode channel of longitude and latitude distribution and interconnection according to a determining deviation, transparent antireflection coating and interconnection are run through to grid electrode channel and electrode window district, grid electrode channel and electrode window district intussuseption are filled with metal material's electrode.
In the preferred technical scheme, the grid electrode channels are arranged in the middle, the electrode window areas are arranged at the corners, the grid electrode channels are vertically and alternately arranged, the line width of the grid electrode channels is 200-500nm, the electrode window areas are composed of a plurality of obliquely arranged channels, the line width of the channels is 200-500nm, and the length of a single electrode window area composed of the obliquely arranged channels is 1-10 mm.
In a preferred technical scheme, the transparent anti-reflection layer is made of silicon nitride or silicon dioxide.
In a preferred technical scheme, a light receiving surface of the substrate is provided with a nanoscale patterned anti-reflection structure, and the nanoscale patterned anti-reflection structure is prepared by a nanoimprint technology.
In an optimal technical scheme, the nanoscale patterned antireflection structure comprises convex cones distributed in an array mode, the bottom widths of the convex cones are 100-200 nanometers, the heights of the convex cones are 100-150 nanometers, and the distance between each convex cone and each convex cone is 100-200 nanometers.
The invention also discloses a preparation method of the nanometer line width grid electrode of the solar cell, which comprises the following steps:
s01: preparing a transparent anti-reflection layer above the light receiving surface of the substrate;
s02: preparing a grid electrode channel and an electrode window area with a nanometer line width on the surface of the transparent anti-reflection layer by a nano-imprinting technology, wherein the grid electrode channel comprises electrode channels which are distributed in a warp-weft manner at a certain interval and are interconnected, and the grid electrode channel and the electrode window area penetrate through the transparent anti-reflection layer and are interconnected;
s03: and filling metal materials in the grid electrode channel and the electrode window region to serve as electrodes.
In a preferred embodiment, the nanoimprinting technique in step S02 includes:
s21: preparing a nano-imprinting template, and manufacturing a graphical structure of the nano-imprinting template in an electron beam exposure or laser direct writing mode, wherein the graphical structure comprises grid electrode channels and electrode window regions with nanometer line widths, the grid electrode channels comprise electrode channels which are distributed in a longitude and latitude mode and are interconnected according to a certain distance, and the grid electrode channels and the electrode window regions penetrate through a transparent anti-reflection layer and are interconnected;
s22: coating photosensitive glue on the surface of the transparent anti-reflection layer;
s23: impressing a photosensitive adhesive coated on the transparent anti-reflection layer through a nano-imprinting template, then carrying out ultraviolet curing on the photosensitive adhesive, and after demoulding, carrying out nano-patterns which are not covered by the photosensitive adhesive on the transparent anti-reflection layer;
s24: and etching the area which is not covered by the photosensitive resist on the transparent anti-reflection layer by using dry etching, etching to penetrate through the transparent anti-reflection layer, and removing the photoresist to obtain a grid electrode channel with a nanometer line width and an electrode window area.
In a preferred embodiment, the method for filling the electrode in step S03 includes:
s31: spraying and coating the electrode slurry on the surface of the transparent anti-reflection layer;
s32: electrode slurry is scraped into the grid electrode channel and the electrode window area through a scraper and is formed at one time, the knife face of the scraper is a rubber knife face, and the rubber knife face is tightly attached to the surface of the transparent anti-reflection layer.
The invention also provides a preparation method of a solar cell with a nanometer line width grid electrode, which is used for preparing the nanometer line width grid electrode by adopting the preparation method of the nanometer line width grid electrode of the solar cell, and the preparation method also comprises the following steps before the nanometer line width grid electrode is prepared:
s001: preparing a nanoscale patterned antireflection structure on an illuminated surface of a substrate by a nanoimprint technology, wherein the nanoscale patterned antireflection structure comprises convex cones distributed in an array manner, the bottom width of each convex cone is 100-200 nanometers, the height of each convex cone is 100-150 nanometers, and the distance between each convex cone and each convex cone is 100-200 nanometers;
s002: forming a diffusion layer on the light receiving surface of the substrate through a diffusion process, wherein the diffusion layer and the substrate form a PN junction;
s003: and depositing a transparent anti-reflection layer above the diffusion layer.
In a preferred technical solution, the method for preparing the nanoscale patterned anti-reflection structure by the nanoimprint technology in the step S001 includes:
s111: preparing a nano-imprinting template, and preparing a graphical structure of the nano-imprinting template in an electron beam exposure or laser direct writing mode, wherein the graphical structure comprises patterns formed by convex cones distributed in an array;
s112: coating photosensitive glue on the light receiving surface of the substrate;
s113: impressing photosensitive resist coated on the light receiving surface of the substrate through a nano-imprinting template, then carrying out ultraviolet curing on the photosensitive resist, and after demolding, carrying out nano-pattern which is not covered by the photosensitive resist on the light receiving surface of the substrate;
s114: and etching the area which is not covered with the photosensitive resist on the light receiving surface of the substrate by using dry etching, wherein the etching depth is 100-150 nanometers, and removing the photoresist to obtain a patterned antireflection structure, wherein the patterned antireflection structure comprises convex cones distributed in an array manner, the bottom widths of the convex cones are 100-200 nanometers, the heights of the convex cones are 100-150 nanometers, and the distance between each convex cone and each convex cone is 100-200 nanometers.
Compared with the prior art, the invention has the advantages that:
1. the nano-imprinting technology is utilized to prepare the grid electrode channel with the nanometer line width and the positive electrode window area on the surface of the transparent anti-reflection layer in a nano-imprinting mode, and silver paste is scraped into the grid electrode channel with the nanometer line width and the positive electrode window area through the scraper, so that the grid electrode with the nanometer line width and the positive electrode are prepared. Is suitable for large-scale production, is beneficial to the development of new energy, and can be widely applied to the field of energy conservation and environmental protection.
2. The nanometer-scale line width grid electrode directly prepared by the nanometer imprinting technology has the line width dimension of 200-500nm, really realizes the nanometer scale, is thinner than the line width of the traditional micron-scale gate electrode, saves more slurry, and can effectively reduce the production cost of the solar cell.
3. The line width of the nanometer line width grid electrode is thinner, so that the light receiving area loss caused by electrode coverage is reduced, the light receiving area is increased, and the photoelectric conversion efficiency can be greatly improved; the grid electrode with the line width of the nanometer scale and staggered in longitude and latitude can ensure that the current density is more uniform, avoid the reliability problem caused by overlarge local current, and improve the reliability and the service life of the battery piece.
4. The surface of a P-type doped substrate sheet is subjected to graphical treatment by utilizing a nanoimprint technology instead of the traditional texturing process, and a nanoscale graphical inversion reducing structure is prepared by improving a roughening structure of the surface of the P-type doped semiconductor substrate sheet, wherein the nanoscale graphical inversion reducing structure is a regular convex cone type in array arrangement, so that the total reflection of incident light of a cell sheet is effectively reduced, and the absorption efficiency of light quanta is further improved. The texture surface structure prepared by the traditional texture surface process is disordered and irregular, the roughness of the texture surface is in a micron level, and the reflectivity is higher.
Drawings
The invention is further described with reference to the following figures and examples:
FIG. 1 is a schematic structural diagram of a solar cell with a grid electrode with a nanometer line width according to a preferred embodiment of the present invention;
FIG. 2 is a schematic illustration of the interconnection of grid electrode channels and electrode window regions in a vertically staggered configuration in accordance with the present invention;
FIG. 3 is a schematic structural diagram of a nanoscale patterned anti-reflection structure according to the present invention;
FIG. 4 is a flow chart of a method for fabricating a nano-scale line width grid electrode of a solar cell according to the present invention;
fig. 5 is a flow chart of a method for preparing a grid electrode channel and an electrode window region with a nanometer line width by using the nanoimprint technology.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings in conjunction with the following detailed description. It should be understood that the description is intended to be exemplary only, and is not intended to limit the scope of the present invention. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present invention.
Example (b):
as shown in fig. 1, a solar cell with a grid electrode with a nanometer line width comprises a substrate 1, a transparent anti-reflection layer 4 is arranged above a light receiving surface 10 of the substrate 1, and grid electrode channels 5 with a nanometer line width and an electrode window area 6 are prepared on the surface of the transparent anti-reflection layer 4 through a nanoimprint technology.
The substrate 1 is generally a P-type doped semiconductor substrate, and may be one of monocrystalline silicon, polycrystalline silicon, amorphous silicon, gallium arsenide, aluminum indium phosphide, cadmium sulfide, cadmium antimonide, and the like.
The transparent anti-reflection layer 4 is made of silicon nitride or silicon dioxide.
In a preferred implementation case, as shown in fig. 2, the grid electrode channels 5 are disposed in the middle, the electrode window regions 6 are disposed at the corners, the electrode channels of the grid electrode channels 5 are distributed in a longitude and latitude manner at a certain interval and are vertically and alternately interconnected, and the grid electrode channels 5 have a nanometer line width and a size of 200 to 500 nm. Electrode window district 6 comprises the channel that many intensive slashes were arranged, and the line width size of channel is 200 ~ 500nm equally, and the length of the single electrode window district that the channel that the slashes were arranged was 1-10mm, and is preferred, and the area size of single electrode window district is 5mm, and every solar wafer possess 4 electrode window districts 6, and electrode window district 6 sets up on four angles.
The metal materials filled in the grid electrode channel 5 and the electrode window area 6 are selected from one or more of silver paste and aluminum paste with better conductivity, and the silver paste is preferably selected. The silver paste comprises nano glass powder, nano silver particles and an organic solvent.
The distance between the warp electrode channel 11 and the warp electrode channel 11, the distance between the warp electrode channel 11 and the weft electrode channel 12 and the distance between the weft electrode channel 12 and the weft electrode channel 12 are 0.1-0.5 mm, and the distances between the warp electrode channel 11 and the weft electrode channel may be equal or unequal.
In a preferred embodiment, the light receiving surface 10 of the substrate 1 is provided with a nanoscale patterned antireflection structure 2, and the nanoscale patterned antireflection structure 2 is prepared by a nanoimprint technology. The nanoscale patterned antireflection structure 2 replaces a texturing surface prepared by a traditional texturing process, the texturing surface structure prepared by the traditional texturing process is disordered and irregular, the surface roughness of the texturing surface is in a micron level, the reflection of sunlight can not be accurately controlled, and the reflectivity is higher. The textured structure is also a regular cuboid structure, but the structure still causes a certain degree of total reflection. In a preferred embodiment, as shown in FIG. 3, the nanoscale patterned antireflection structure 2 includes convex cones 20 distributed in an array, the width of the bottom of each convex cone 20 is 100-200 nm, the height of each convex cone 20 is 100-150 nm, and the distance between each convex cone 20 and each convex cone 20 is 100-200 nm. The structure can effectively absorb incident light, not only solves the problem of total reflection, but also increases the surface area of the light receiving surface due to the convex cone shape, and further improves the light quantum absorption efficiency due to the large light receiving area.
As shown in fig. 2, the solar cell further includes a diffusion layer 3 formed on the light-receiving surface of the substrate 1, which is typically an N-type diffusion layer, and has a thickness in a range of 0.3 to 0.5 μm, thereby forming a PN junction of the solar cell. A transparent anti-reflection layer 4 is formed on the N-type diffusion layer 3. The back of substrate 1 still is provided with back silver electrode 9, and the material that back silver electrode 9 chose for use is one or more synthetic materials in silver thick liquid, the aluminium thick liquid that has better electric conductivity, preferred choice silver thick liquid, the thickness of electrode is 10 ~ 20 microns.
In another embodiment, as shown in fig. 4, the invention further discloses a method for preparing a nano-scale line width grid electrode of a solar cell, comprising the following steps:
s01: preparing a transparent anti-reflection layer above the light receiving surface of the substrate;
s02: preparing a grid electrode channel and an electrode window area with a nanometer line width on the surface of the transparent anti-reflection layer by a nano-imprinting technology, wherein the grid electrode channel comprises electrode channels which are distributed in a warp-weft manner at a certain interval and are interconnected, and the grid electrode channel and the electrode window area penetrate through the transparent anti-reflection layer and are interconnected;
s03: and filling metal materials in the grid electrode channel and the electrode window region to serve as electrodes.
The method for preparing the transparent anti-reflection layer above the light receiving surface of the substrate in step S01 may be a chemical vapor deposition (PECVD) method. The transparent anti-reflection layer plays a role in protecting the surface of a PN junction of the solar cell and improving the reliability of the cell, and plays a role in anti-reflection of incident light, the transparent anti-reflection layer is made of transparent silicon nitride or silicon dioxide, and the thickness of the transparent anti-reflection layer is 1-3 microns.
The grid electrode prepared by the invention is provided with a preformed channel, the nanometer line width grid electrode channel and the positive electrode window area which are distributed in a grid form on the surface are a fixed layout, slurry is not easy to collapse and overflow after being scraped into the channel by a scraper, the line width precision is high, and the nanometer line width size can be achieved.
In a preferred embodiment, as shown in fig. 5, the nanoimprinting technique of step S02 includes:
s21: preparing a nano-imprinting template, and manufacturing a graphical structure of the nano-imprinting template in an electron beam exposure or laser direct writing mode, wherein the graphical structure comprises grid electrode channels and electrode window regions with nanometer line widths, the grid electrode channels comprise electrode channels which are distributed in a longitude and latitude mode and are interconnected according to a certain distance, and the grid electrode channels and the electrode window regions penetrate through a transparent anti-reflection layer and are interconnected;
s22: coating photosensitive glue on the surface of the transparent anti-reflection layer;
s23: impressing a photosensitive adhesive coated on the transparent anti-reflection layer through a nano-imprinting template, then carrying out ultraviolet curing on the photosensitive adhesive, and after demoulding, carrying out nano-patterns which are not covered by the photosensitive adhesive on the transparent anti-reflection layer;
s24: and etching the area which is not covered by the photosensitive resist on the transparent anti-reflection layer by using dry etching, etching to penetrate through the transparent anti-reflection layer, and removing the photoresist to obtain a grid electrode channel with a nanometer line width and an electrode window area.
Wherein, the nano-imprint template is made of quartz or sapphire materials.
The coating method of the photoresist may be one of spin coating or spray coating.
The dry etching of step S24 may be ICP dry etching.
In a preferred embodiment, the method of filling the electrodes in step S03 includes:
s31: spraying and coating the electrode slurry on the surface of the transparent anti-reflection layer;
s32: and scraping the electrode slurry into a grid electrode channel and an electrode window area through a scraper and forming at one time to form a nanometer line width grid electrode 7 and a positive silver electrode 8, wherein the knife face of the scraper is a rubber knife face, and the rubber knife face is tightly attached to the surface of the transparent anti-reflection layer.
The amount of the electrode slurry sprayed in each time is determined according to the arrangement density of the nanometer line width grid electrode channels of the solar cell, and the more dense the arrangement, the more the amount is set.
It should be noted that: the scraper has the advantages that the scraper face is made of soft rubber materials, the scraper is an easily-consumed product and has a certain service life, and the size width of the scraper is larger than the appearance width of the solar cell. The scraper can be controlled by a machine and is in seamless close contact with the surface of the transparent anti-reflection layer, and in order to prevent electrode slurry in the grid electrode channel from being adhered, an organic solvent can be coated on the surface of the rubber cutter.
The thickness of the nano-scale line width grid electrode 7 and the thickness of the positive silver electrode 8 are the same as the thickness of the transparent antireflection film, and are also 1-3 micrometers.
In another embodiment, the invention further provides a method for manufacturing a solar cell with a grid electrode with a nanometer line width, wherein the grid electrode with the nanometer line width is manufactured by any one of the above methods for manufacturing a grid electrode with a nanometer line width of a solar cell. The preparation method of the solar cell comprises the following steps:
s001: the P-type doped semiconductor substrate 1 is selected as a substrate of the solar cell, the P-type doped semiconductor substrate 1 is one of materials such as monocrystalline silicon, polycrystalline silicon, amorphous silicon, gallium arsenide, aluminum indium phosphide, cadmium sulfide, cadmium antimonide and the like, and the monocrystalline silicon material is preferably selected as the substrate of the solar cell. Preparing a nanoscale patterned antireflection structure on an illuminated surface of a substrate by a nanoimprint technology, wherein the nanoscale patterned antireflection structure comprises convex cones distributed in an array manner, the bottom width of each convex cone is 100-200 nanometers, the height of each convex cone is 100-150 nanometers, and the distance between each convex cone and each convex cone is 100-200 nanometers;
s002: forming a diffusion layer on the light receiving surface of the substrate through a diffusion process, wherein the diffusion layer and the substrate form a PN junction; specifically, phosphorus diffusion is carried out on the front surface of the P-type doped semiconductor substrate through a phosphorus diffusion process, an N-type diffusion layer with a certain thickness is formed on the front surface of the P-type doped semiconductor substrate, and the thickness range of the N-type diffusion layer 3 is 0.3-0.5 micrometer, so that a PN junction of the solar cell is formed.
S003: and depositing a transparent anti-reflection layer above the diffusion layer. Specifically, a transparent anti-reflection layer is prepared by depositing on the N-type diffusion layer by a chemical vapor deposition (PECVD) method, the material of the transparent anti-reflection layer is transparent silicon nitride or silicon dioxide, and the thickness of the anti-reflection layer is 1-3 microns.
And then, nano-imprinting the surface of the transparent anti-reflection layer by using a nano-imprinting technology to prepare a nano-scale line width grid electrode channel and an electrode window area. The specific steps are described above and are not described in detail here.
Then, a back silver electrode 9 is prepared on the back surface of the substrate through a screen printing process, the back silver electrode 9 is made of one or more of silver paste and aluminum paste with good conductivity, the silver paste is preferably selected, and the thickness of the back silver electrode is 10-20 micrometers.
And finally, conveying the solar cell into a sintering furnace for sintering to form ohmic contact between the electrode and the PN junction, wherein the sintering temperature of the ohmic contact is 800-1000 ℃.
In a preferred embodiment, the method for preparing the nanoscale patterned anti-reflection structure by the nanoimprint technology in step S001 includes:
s111: preparing a nano-imprinting template, and preparing a graphical structure of the nano-imprinting template in an electron beam exposure or laser direct writing mode, wherein the graphical structure comprises patterns formed by convex cones distributed in an array; specifically, the nano-imprint template is made of quartz or sapphire.
S112: coating photosensitive glue on the light receiving surface of the substrate; specifically, the photoresist may be a UV photoresist, and the coating method of the UV photoresist may be spin coating or spray coating.
S113: impressing photosensitive glue coated on the light receiving surface of the substrate through a nano-imprinting template, then carrying out ultraviolet light curing on the photosensitive glue, demoulding after the UV photosensitive glue is cured, and carrying out demoulding to obtain a nano pattern which is not covered by the photosensitive glue on the light receiving surface of the substrate; the curing time used is determined by the coating amount of the UV photoresist and the photosensitive property.
S114: and etching the area which is not covered with the photosensitive resist on the illuminated surface of the substrate by using dry etching, wherein the etching depth is 100-150 nanometers, and removing the photoresist to obtain the nanoscale patterned antireflection structure, wherein the nanoscale patterned antireflection structure comprises convex cones distributed in an array manner, the bottom widths of the convex cones are 100-200 nanometers, the heights of the convex cones are 100-150 nanometers, and the distance between each convex cone and each convex cone is 100-200 nanometers.
It is to be understood that the above-described embodiments of the present invention are merely illustrative of or explaining the principles of the invention and are not to be construed as limiting the invention. Therefore, any modification, equivalent replacement, improvement and the like made without departing from the spirit and scope of the present invention should be included in the protection scope of the present invention. Further, it is intended that the appended claims cover all such variations and modifications as fall within the scope and boundaries of the appended claims or the equivalents of such scope and boundaries.
Claims (10)
1. The utility model provides a solar cell with nanometer line width grid electrode, includes the substrate, its characterized in that, the sensitive surface top of substrate is provided with transparent anti-reflection layer, grid electrode channel and the electrode window district of nanometer line width are prepared through the nanoimprint technology on transparent anti-reflection layer surface, the grid electrode channel includes the electrode channel that is longitude and latitude distribution and interconnection according to a determining deviation, grid electrode channel and electrode window district run through transparent anti-reflection layer and interconnection, grid electrode channel and electrode window district intussuseption are filled with metal material's electrode.
2. The solar cell with the nano-scale line width grid electrode according to claim 1, wherein the grid electrode channel is disposed at the middle part, the electrode window region is disposed at the corner, the grid electrode channels are vertically staggered, the line width of the grid electrode channel is 200-500nm, the electrode window region is composed of a plurality of diagonally arranged channels, the line width of the channels is 200-500nm, and the length of a single electrode window region composed of the diagonally arranged channels is 1-10 mm.
3. The solar cell with the grid electrode having the nanometer line width according to claim 1, wherein the transparent anti-reflection layer is made of silicon nitride or silicon dioxide.
4. The solar cell with the grid electrode having the nanometer-scale line width according to any one of claims 1 to 3, wherein the light receiving surface of the substrate is provided with a nanoscale patterned antireflection structure, and the nanoscale patterned antireflection structure is prepared by a nanoimprint technology.
5. The solar cell with the grid electrode having the nanometer line width as claimed in claim 4, wherein the nanoscale patterned antireflection structure comprises convex cones distributed in an array, the bottom width of each convex cone is 100-200 nm, the height of each convex cone is 100-150 nm, and the distance between each convex cone and each convex cone is 100-200 nm.
6. A preparation method of a nanometer line width grid electrode of a solar cell is characterized by comprising the following steps:
s01: preparing a transparent anti-reflection layer above the light receiving surface of the substrate;
s02: preparing a grid electrode channel and an electrode window area with a nanometer line width on the surface of the transparent anti-reflection layer by a nano-imprinting technology, wherein the grid electrode channel comprises electrode channels which are distributed in a warp-weft manner at a certain interval and are interconnected, and the grid electrode channel and the electrode window area penetrate through the transparent anti-reflection layer and are interconnected;
s03: and filling metal materials in the grid electrode channel and the electrode window region to serve as electrodes.
7. The method as claimed in claim 6, wherein the nanoimprint technology in step S02 includes:
s21: preparing a nano-imprinting template, and manufacturing a graphical structure of the nano-imprinting template in an electron beam exposure or laser direct writing mode, wherein the graphical structure comprises grid electrode channels and electrode window regions with nanometer line widths, the grid electrode channels comprise electrode channels which are distributed in a longitude and latitude mode and are interconnected according to a certain distance, and the grid electrode channels and the electrode window regions penetrate through a transparent anti-reflection layer and are interconnected;
s22: coating photosensitive glue on the surface of the transparent anti-reflection layer;
s23: impressing a photosensitive adhesive coated on the transparent anti-reflection layer through a nano-imprinting template, then carrying out ultraviolet curing on the photosensitive adhesive, and after demoulding, carrying out nano-patterns which are not covered by the photosensitive adhesive on the transparent anti-reflection layer;
s24: and etching the area which is not covered by the photosensitive resist on the transparent anti-reflection layer by using dry etching, etching to penetrate through the transparent anti-reflection layer, and removing the photoresist to obtain a grid electrode channel with a nanometer line width and an electrode window area.
8. The method for preparing a nano-scale line width grid electrode of a solar cell according to claim 6, wherein the method for filling the electrode in the step S03 comprises:
s31: spraying and coating the electrode slurry on the surface of the transparent anti-reflection layer;
s32: electrode slurry is scraped into the grid electrode channel and the electrode window area through a scraper and is formed at one time, the knife face of the scraper is a rubber knife face, and the rubber knife face is tightly attached to the surface of the transparent anti-reflection layer.
9. A method for manufacturing a solar cell having a grid electrode with a nanometer line width, the method for manufacturing a grid electrode with a nanometer line width of a solar cell according to any one of claims 6 to 8, the method further comprising the following steps before manufacturing the grid electrode with a nanometer line width:
s001: preparing a nanoscale patterned antireflection structure on an illuminated surface of a substrate by a nanoimprint technology, wherein the nanoscale patterned antireflection structure comprises convex cones distributed in an array manner, the bottom width of each convex cone is 100-200 nanometers, the height of each convex cone is 100-150 nanometers, and the distance between each convex cone and each convex cone is 100-200 nanometers;
s002: forming a diffusion layer on the light receiving surface of the substrate through a diffusion process, wherein the diffusion layer and the substrate form a PN junction;
s003: and depositing a transparent anti-reflection layer above the diffusion layer.
10. The method for preparing a solar cell with a grid electrode with nanometer line width according to claim 9, wherein the method for preparing the nanometer patterned anti-reflection structure by the nanoimprint technology in the step S001 comprises:
s111: preparing a nano-imprinting template, and preparing a graphical structure of the nano-imprinting template in an electron beam exposure or laser direct writing mode, wherein the graphical structure comprises patterns formed by convex cones distributed in an array;
s112: coating photosensitive glue on the light receiving surface of the substrate;
s113: impressing photosensitive resist coated on the light receiving surface of the substrate through a nano-imprinting template, then carrying out ultraviolet curing on the photosensitive resist, and after demolding, carrying out nano-pattern which is not covered by the photosensitive resist on the light receiving surface of the substrate;
s114: and etching the area which is not covered with the photosensitive resist on the light receiving surface of the substrate by using dry etching, wherein the etching depth is 100-150 nanometers, and removing the photoresist to obtain a patterned antireflection structure, wherein the patterned antireflection structure comprises convex cones distributed in an array manner, the bottom widths of the convex cones are 100-200 nanometers, the heights of the convex cones are 100-150 nanometers, and the distance between each convex cone and each convex cone is 100-200 nanometers.
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| CN115813398A (en) * | 2023-02-17 | 2023-03-21 | 四川锦江电子医疗器械科技股份有限公司 | Balloon electrode catheter and using method thereof |
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