CN113607289A - Infrared temperature measurement method for reducing thermal hysteresis error - Google Patents
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- 238000009529 body temperature measurement Methods 0.000 title claims abstract description 29
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- G—PHYSICS
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/52—Radiation pyrometry, e.g. infrared or optical thermometry using comparison with reference sources, e.g. disappearing-filament pyrometer
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Abstract
The invention discloses an infrared temperature measurement method for reducing thermal hysteresis error, belonging to the field of infrared temperature measurement.
Description
Technical Field
The invention relates to the field of infrared temperature measurement, in particular to an infrared temperature measurement method for reducing thermal hysteresis errors.
Background
The temperature is the most basic physical quantity in nature, and almost all physical and chemical changes in nature have a direct relation with the temperature and also have a close relation with all industrial production and scientific research activities. Therefore, accurate temperature measurement and control are important to obtain accurate scientific data and ensure product quality. The temperature is also one of the basic physiological indexes of human body, and is an important basis for judging clinical diseases and vital signs. When a person is in a healthy state, the body temperature is generally constant, but when some functions in the body are changed or some parts are affected, the constant body temperature changes, for example, the primary manifestation of the pathological changes or functional failure of the body is fever.
The manner of temperature measurement is generally divided into two categories: contact and non-contact methods. The temperature measurement by the contact method is tested according to the heat balance principle that two objects reach equal temperature after long-time contact, and the used temperature sensors are thermocouples and thermal resistors. The non-contact temperature measurement is to measure the temperature of an object by utilizing the principle that the thermal radiation energy of the object changes along with the temperature change, and mainly adopts radiation temperature measurement. The temperature of the measured object is sensed by the infrared temperature sensor in the form of infrared radiation, a voltage signal corresponding to the intensity of the heat radiation is generated and output, and after the operation of the microprocessor, the corresponding temperature value of the measured object is displayed on the display terminal. Therefore, the accuracy and stability of the non-contact infrared thermometer for detecting the temperature of the human body basically need to rely on an infrared temperature sensor.
Ambient temperature T when an infrared temperature sensor is rapidly moved from one environment to another environment of different temperatureeCannot immediately indicate a new ambient temperature, but rather gradually approaches the new ambient temperature, a phenomenon known as thermal lag (or hysteresis) of the temperature, which produces an error, known as temperature hysteresis, when the reading is taken before its reading has reached the new ambient temperature. The reason for the lag of thermometric instruments is mainly that the heat exchange between the element and the surrounding environment requires a process, which is called thermal lag effect. Thermal hysteresis effects will cause temperature measurement errors, called thermal hysteresis errors. And T of infrared thermopileeThe temperature sensor is characterized in that the NTC is integrated in the sensor, and a period of time is required for the NTC and a new environment temperature to reach a new thermal equilibrium within the time of environmental transfer of the infrared temperature sensor. Therefore, the thermopile infrared temperature sensor has thermal hysteresis effect at the moment.
Disclosure of Invention
Aiming at the problems in the prior art, the invention aims to provide an infrared temperature measurement method for reducing thermal hysteresis errors, which is used for solving the problem of thermal hysteresis errors of infrared temperature sensor devices.
In order to solve the above problems, the present invention adopts the following technical solutions.
F1, an infrared temperature measurement method for reducing thermal hysteresis error, comprising the following steps:
step a1, obtaining the temperature difference value delta T between the measured object and the sensor shellabAnd temperature T of the sensor housinge；
Step a2, calculating the temperature T of the measured objecto；To＝△Tab+Te。
F2, based on F1, acquiring temperature difference value delta T between the measured object and the sensor shell by adopting two infrared thermopilesab。
F3, based on F2, respectively naming two infrared thermopiles as a first infrared thermopile and a second infrared thermopile;
the first infrared thermopile can receive the irradiation of infrared rays emitted by a measured object, and then generates a first voltage value Va；
The second infrared thermopile can receive the irradiation of the infrared rays emitted by the sensor shell and further generate a second voltage value Vb。
F4, acquiring temperature difference value delta T based on F3abThe process steps are as follows:
step a1.1, calculating a first voltage value VaAnd a second voltage value VbVoltage difference of (delta V)ab；△Vab＝Va-Vb；
Step a1.2, calling a V-T table, wherein a mapping relation between a voltage difference delta V and a temperature difference value delta T is recorded in the V-T table;
step a1.3, by inquiring delta V in V-T tableabObtaining a Δ Tab。
F5, based on F4, the data in the V-T table are obtained by the staff of the sensor manufacturer through actual test experiments when the sensor is designed or produced.
F6, based on F1, acquiring temperature T of sensor shell by using NTC thermistore。
F7, acquiring temperature T of sensor shell based on F6eThe specific operation steps of the process are as follows;
step b1, measuring the real-time resistance value R of the NTC thermistora；
Step b2, calling an R-T table, wherein the R-T table records the mapping relation between the resistance value R of the NTC and the temperature T of the NTC;
step b3, by querying R in R-T tableaObtaining the temperature T of the NTCaTemperature T of sensor housingeIs equal to Ta。
F8, based on F7, the data in the R-T table are obtained by workers of sensor manufacturers through actual test experiments during sensor design.
F9, based on F1, the sensor housing includes upper cover, base and light filter, upper cover and base fixed connection, the light filter is installed in the installation window that base a side was equipped with is kept away from to the upper cover, base and light filter inboard have installation space.
F10, based on F1, acquiring temperature difference value delta T between the measured object and the sensor shell in time sequenceabAnd then obtaining the temperature T of the sensor shelle。
F11, based on F1, acquiring the temperature T of the sensor shell in time sequenceeObtaining the temperature difference value Delta T between the measured object and the sensor shellab。
F12, based on F1, and simultaneously acquiring temperature T of the sensor shell in paralleleDelta T value of temperature differenceab。
F13, based on F1, the first infrared thermopile can receive the irradiation of the infrared ray emitted by the sensor shell.
Compared with the prior art, the invention has the advantages that:
the infrared temperature measuring method is characterized in that two infrared thermopiles are used for providing instant environment temperature parameters, compared with the existing infrared temperature sensor device, one thermopile is added inside the infrared temperature measuring method, the temperature difference is reflected by the voltage difference value generated by the temperature difference of the two thermopiles, and the NTC thermistor and the sensor shell are slow in reaching a thermal balance state and extremely fast in response speed of the thermopiles, so that the thermal hysteresis error generated by the thermal hysteresis effect is eliminated.
The infrared temperature measuring method utilizes the voltage difference between the temperature of the measured object and the cold end of the thermopile sensorIn combination with the resistance value R and the temperature T of the NTCeThe mapping relation between the temperature and the temperature of the sensor is avoided, so that the thermal hysteresis error caused by the thermal hysteresis effect caused by the fact that the temperature of the sensor is not timely balanced with the NTC is avoided, and the improved thermopile infrared temperature sensor is more accurate in measurement.
And thirdly, the temperature measuring sensor in the infrared temperature measuring method can be repeatedly used, and has high reusability and lower cost.
And fourthly, the temperature measuring sensor in the infrared temperature measuring method is provided, and the consistency of batch production is high.
Drawings
Fig. 1 is a flowchart of an infrared temperature measurement method for reducing thermal hysteresis error according to embodiment 1 of the present invention.
Fig. 2 is a schematic diagram showing the relationship of infrared radiation collection of the first thermopile a, the second thermopile B, and the sensor housing according to embodiment 1 of the present invention.
Fig. 3 is an application framework diagram of embodiment 5 of the present invention.
Fig. 4 is a flowchart of temperature operation performed in the MCU according to embodiment 5 of the present invention.
Fig. 5 is a schematic top perspective view of a temperature measurement sensor according to embodiment 6 of the present invention.
Fig. 6 is a schematic bottom view of a temperature measurement sensor according to embodiment 6 of the present invention.
Fig. 7 is a schematic view of the structure at the infrared thermopile of the temperature measuring sensor of embodiment 6 of the present invention.
Fig. 8 is a schematic structural view of a temperature measurement sensor according to embodiment 6 of the present invention at a first pin.
The reference numbers in the figures illustrate:
the device comprises an upper cover of a 1-1 sensor shell, a base of the 1-2 sensor shell, an optical filter of the 1-3 sensor shell, a first pin 1, a second pin 2, a third pin 3, a fourth pin 4, a fifth pin 5, infrared rays radiated by an H-a measured object, infrared rays radiated by an H-B sensor shell, an MCU microcomputer chip, a first thermopile A and a second thermopile B.
Detailed Description
Example 1:
referring to fig. 1-2, an infrared temperature measurement method for reducing thermal hysteresis error includes the following steps:
step a1, obtaining the temperature difference value delta T between the measured object and the sensor shellabAnd temperature T of the sensor housinge；
Step a2, calculating the temperature T of the measured objecto；To＝△Tab+Te。
It is directed to a specific temperature measurement sensor; the temperature measuring sensor comprises an NTC thermistor, a first infrared thermopile A, a second infrared thermopile B and a sensor shell; the NTC thermistor, the first infrared thermopile and the second infrared thermopile are all arranged in the sensor shell; the first infrared thermopile is used for converting infrared radiation generated by the object to be measured into a first voltage value Va(ii) a The second infrared thermopile is used for converting the infrared radiation generated by the sensor housing into a second voltage value Vb(ii) a NTC thermistor for measuring temperature T of sensor housinge。
Obtaining a temperature difference value Delta TabThe process steps are as follows:
step a1.1, calculating a first voltage value VaAnd a second voltage value VbVoltage difference of (delta V)ab；△Vab＝Va-Vb；
Step a1.2, calling a V-T table, wherein a mapping relation between a voltage difference delta V and a temperature difference value delta T is recorded in the V-T table;
step a1.3, by inquiring delta V in V-T tableabObtaining a Δ Tab。
Specifically, the NTC thermistor is in direct contact with the sensor housing; and a heat conduction channel between the NTC thermistor and the sensor shell is a contact interface between the first infrared thermopile and the sensor shell.
Obtaining a temperature T of a sensor housingeThe specific operation steps of the process are as follows;
step b1, measuring real-time resistance value R of NTCa；
Step b2, calling an R-T table, wherein the R-T table records the mapping relation between the resistance value R of the NTC and the temperature T of the NTC;
step b3, by querying R in R-T tableaObtaining the temperature T of the NTCaTemperature T of sensor housingeIs equal to Ta。
Example 2: on the basis of example 1, the data in the V-T table were generated by the staff of the sensor manufacturer through actual test experiments at the time of sensor design or production.
Example 3: on the basis of example 1, the data in the R-T table were obtained by the staff of the sensor manufacturer through actual test experiments at the time of sensor design.
Example 4: based on the example 1, the data in the R-T table is calculated according to the following formula, and the mapping relationship between the resistance value R of the NTC and the ambient temperature T is: r is EXP (B (1/T-1/T), R is the resistance of the NTC thermistor at T temperature, R is the nominal resistance of the thermistor at T normal temperature, B is an important parameter of the thermistor, EXP is the power n of e, T and T refer to K degrees, i.e. kelvin temperature, and K is 273.15 (absolute temperature) + centigrade.
Example 5: referring to fig. 3-4, the temperature measuring system using the infrared temperature measuring method for reducing thermal hysteresis error described in embodiment 1 obtains Δ V using the circuit hardware of the analog subtraction circuitab，
Measuring the resistance value of the NTC thermistor by using a resistance test circuit (the specific implementation of the resistance test circuit is the prior art and is not described again);
using MCU to look up V-T table stored in MCU to obtain delta Tab；
Using the MCU, the difference is stored in the MCU in the R-T table to obtain Te.
Calculating T by using mathematical operation circuit of MCUo＝△Tab+Te。
The present embodiment is prepared for an electronic engineer with knowledge about MCU programming (MCU is also called a single chip microcomputer (scm) or a single chip microcomputer), an analog circuit, and a digital circuit, and for the sake of brevity of text, common general knowledge required for industrial application of the present embodiment is not described in detail.
Example 6:
as shown in fig. 5 to 8, the temperature measuring sensor described in embodiment 1 is specifically designed as follows, and the temperature measuring sensor includes an NTC thermistor, a first infrared thermopile a, a second infrared thermopile B, and a sensor housing. Referring to fig. 5, the sensor housing includes an upper cover 1-1, a base 1-2, and a filter 1-3, the upper cover 1-1 is fixedly connected to the base 1-2, the filter 1-3 is installed in an installation window formed on a side of the upper cover 1-1 away from the base 1-2, and an installation space is formed inside the upper cover 1-1, the base 1-2, and the filter 1-3 for installing the NTC thermistor, the first infrared thermopile, and the second infrared thermopile. The upper cover 1-1 and the base 1-2 are both made of kovar alloy materials.
Referring to fig. 8, the temperature measurement sensor has a first pin 1, a second pin 2, a third pin 3, a fourth pin 4, and a fifth pin 5; the hot end of the first infrared thermopile is connected with the fifth pin 5, and the first infrared thermopile is A in the graph of FIG. 7; the hot end of a second infrared thermopile is connected with the fourth pin 4, and the second infrared thermopile is B in the figure 7; the first pin 1 is grounded; the second pin 2 is connected with the first infrared thermopile and the second infrared thermopile and is used as the cold ends of the first infrared thermopile and the second infrared thermopile for multiplexing; the third pin 3 is connected with the positive pole of the NTC.
Claims (10)
1. An infrared temperature measurement method for reducing thermal hysteresis error is characterized in that:
the method comprises the following steps:
step a1, obtaining the temperature difference value delta T between the measured object and the sensor shellabAnd temperature T of the sensor housinge；
Step a2, calculating the temperature T of the measured objecto；To＝△Tab+Te。
2. The infrared thermometry method of claim 1, wherein the step of measuring the thermal hysteresis error comprises: two infrared thermopiles are adopted to obtain the temperature difference value delta T between the measured object and the sensor shellab。
3. The infrared thermometry method of claim 2, wherein the step of measuring the thermal hysteresis error comprises:
the two infrared thermopiles are respectively named as a first infrared thermopile and a second infrared thermopile;
the first infrared thermopile can receive the irradiation of infrared rays emitted by a measured object, and then generates a first voltage value Va；
The second infrared thermopile can receive the irradiation of the infrared rays emitted by the sensor shell and further generate a second voltage value Vb；
Obtaining a temperature difference value Delta TabThe process steps are as follows:
step a1.1, calculating a first voltage value VaAnd a second voltage value VbVoltage difference of (delta V)ab；△Vab＝Va-Vb；
Step a1.2, calling a V-T table, wherein a mapping relation between a voltage difference delta V and a temperature difference value delta T is recorded in the V-T table;
step a1.3, by inquiring delta V in V-T tableabObtaining a Δ Tab。
4. The infrared temperature measurement method for reducing thermal hysteresis error as claimed in claim 3, wherein: the data in the V-T table is obtained by workers of sensor manufacturers through actual test experiments during sensor design or production.
5. The infrared temperature measurement method for reducing thermal hysteresis error as claimed in claim 1, wherein: temperature T of sensor shell is obtained by NTC thermistore。
6. The infrared temperature measurement method for reducing thermal hysteresis error as claimed in claim 5, wherein: obtaining a temperature T of a sensor housingeThe specific operation steps of the process are as follows;
step b1, measuring the real-time resistance value R of the NTC thermistora；
Step b2, calling an R-T table, wherein the R-T table records the mapping relation between the resistance value R of the NTC and the temperature T of the NTC;
step b3, by querying R in R-T tableaObtaining the temperature T of the NTCaTemperature T of sensor housingeIs equal to Ta。
7. The infrared temperature measurement method for reducing thermal hysteresis error as claimed in claim 2, wherein: the sensor shell comprises an upper cover (1-1), a base (1-2) and an optical filter (1-3), the upper cover (1-1) is fixedly connected with the base (1-2), the optical filter (1-3) is installed in an installation window which is formed in one side face, far away from the base (1-2), of the upper cover (1-1), and installation spaces are formed in the inner sides of the upper cover (1-1), the base (1-2) and the optical filter (1-3).
8. The infrared temperature measurement method for reducing thermal hysteresis error as claimed in claim 1, wherein: in time sequence, firstly obtaining the temperature difference value Delta T between the measured object and the sensor shellabAnd then obtaining the temperature T of the sensor shelle。
9. The infrared temperature measurement method for reducing thermal hysteresis error as claimed in claim 1, wherein: in time sequence, the temperature T of the sensor shell is firstly acquiredeObtaining the temperature difference value Delta T between the measured object and the sensor shellab。
10. The infrared temperature measurement method for reducing thermal hysteresis error as claimed in claim 1, wherein: in parallel, the temperature T of the sensor housing is obtainedeDelta T value of temperature differenceab。
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| US4722612A (en) * | 1985-09-04 | 1988-02-02 | Wahl Instruments, Inc. | Infrared thermometers for minimizing errors associated with ambient temperature transients |
| US5159936A (en) * | 1990-08-17 | 1992-11-03 | Mark Yelderman | Noncontact infrared tympanic thermometer |
| JPH07280650A (en) * | 1994-04-11 | 1995-10-27 | Casio Comput Co Ltd | Radiation thermometer |
| CN105758530A (en) * | 2014-12-17 | 2016-07-13 | 马克西姆综合产品公司 | Ambient Temperature Measurement Sensor |
| CN111189549A (en) * | 2020-01-10 | 2020-05-22 | 厦门烨映电子科技有限公司 | Environment self-adaptive thermopile infrared sensor |
| CN111504476A (en) * | 2019-01-31 | 2020-08-07 | 众智光电科技股份有限公司 | Infrared temperature sensor |
| CN111579096A (en) * | 2020-05-07 | 2020-08-25 | 深圳市微电元科技有限公司 | Infrared temperature measurement sensor module, temperature measurement method and temperature measurement equipment |
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2021
- 2021-07-13 CN CN202110791476.1A patent/CN113607289A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4722612A (en) * | 1985-09-04 | 1988-02-02 | Wahl Instruments, Inc. | Infrared thermometers for minimizing errors associated with ambient temperature transients |
| US5159936A (en) * | 1990-08-17 | 1992-11-03 | Mark Yelderman | Noncontact infrared tympanic thermometer |
| JPH07280650A (en) * | 1994-04-11 | 1995-10-27 | Casio Comput Co Ltd | Radiation thermometer |
| CN105758530A (en) * | 2014-12-17 | 2016-07-13 | 马克西姆综合产品公司 | Ambient Temperature Measurement Sensor |
| CN111504476A (en) * | 2019-01-31 | 2020-08-07 | 众智光电科技股份有限公司 | Infrared temperature sensor |
| CN111189549A (en) * | 2020-01-10 | 2020-05-22 | 厦门烨映电子科技有限公司 | Environment self-adaptive thermopile infrared sensor |
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