CN113571669A - Method for manufacturing micro display - Google Patents
Method for manufacturing micro display Download PDFInfo
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- CN113571669A CN113571669A CN202110799420.0A CN202110799420A CN113571669A CN 113571669 A CN113571669 A CN 113571669A CN 202110799420 A CN202110799420 A CN 202110799420A CN 113571669 A CN113571669 A CN 113571669A
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- 238000000034 method Methods 0.000 title claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 96
- 238000005530 etching Methods 0.000 claims abstract description 17
- 239000010410 layer Substances 0.000 claims description 226
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 239000012670 alkaline solution Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 8
- 239000004642 Polyimide Substances 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 5
- 238000004528 spin coating Methods 0.000 claims description 5
- 239000002346 layers by function Substances 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 238000005240 physical vapour deposition Methods 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 239000000243 solution Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 description 56
- 238000010586 diagram Methods 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000003344 environmental pollutant Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- 229920001621 AMOLED Polymers 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The embodiment of the invention provides a method for manufacturing a micro display, which comprises the following steps: providing a base plate, wherein the base plate comprises a substrate and a circuit layer positioned on one side of the substrate; forming a first electrode layer on one side of the circuit layer, which is far away from the substrate, wherein the first electrode layer comprises a plurality of first electrodes; forming a photosensitive film layer on one side of the first electrode layer, which is far away from the circuit layer, wherein the photosensitive film layer covers the first electrode layer; and etching the photosensitive film layer until the surface of one side, away from the substrate, of the first electrode layer is flush with the surface of the other side, away from the substrate, of the photosensitive film layer in the rest part, wherein the photosensitive film layer in the rest part is a pixel definition layer. The method for manufacturing the micro-display can prevent the cathode or the anode from being broken.
Description
Technical Field
The embodiment of the invention relates to the field of display, in particular to a method for manufacturing a micro display.
Background
With the expanding demand of the current market for the diversity and high performance of display devices, the development of display technology is greatly promoted. A silicon-based Micro Organic Light Emitting Diode (OLED) technology based on a panel combined with a semiconductor technology is also rapidly developing. The silicon-based Micro OLED Micro-display device is different from the conventional AMOLED device which utilizes amorphous silicon, microcrystalline silicon or low-temperature polycrystalline silicon thin film transistors as a backboard, takes a monocrystalline silicon chip as a substrate, has the pixel size of 1/10 of the conventional display device, and has the fineness far higher than that of the conventional device. Based on the technical advantages and wide application market, the display device is expected to bring up a new wave of near-to-eye display in the field of consumer electronics.
In the manufacturing process of the current silicon-based Micro OLED Micro display device, when the anode is etched, a certain section difference is caused due to the thickness of the anode and the over-etching depth of dry etching, and after the partial section difference passes through the OLED, the subsequent poor lap joint of the evaporation cathode, namely the cathode fracture can be caused, so that the yield of the substrate is low.
Disclosure of Invention
The method for manufacturing the micro-display can prevent the cathode or the anode from being broken.
The embodiment of the invention provides a method for manufacturing a micro display, which comprises the following steps:
providing a base plate, wherein the base plate comprises a substrate and a circuit layer positioned on one side of the substrate;
forming a first electrode layer on one side of the circuit layer, which is far away from the substrate, wherein the first electrode layer comprises a plurality of first electrodes;
forming a photosensitive film layer on one side of the first electrode layer, which is far away from the circuit layer, wherein the photosensitive film layer covers the first electrode layer;
and etching the photosensitive film layer until the surface of one side, away from the substrate, of the first electrode layer is flush with the surface of the other side, away from the substrate, of the photosensitive film layer in the rest part, wherein the photosensitive film layer in the rest part is a pixel definition layer.
Optionally, etching the photosensitive film layer until a surface of the first electrode layer on a side away from the substrate is flush with a surface of the remaining photosensitive film layer on a side away from the substrate includes:
and putting the substrate on which the photosensitive film layer is formed into an alkaline solution, and etching the photosensitive film layer by the alkaline solution until the surface of one side, away from the substrate, of the first electrode layer is flush with the surface of the other side, away from the substrate, of the photosensitive film layer.
Optionally, the alkaline solution comprises a developer solution.
Optionally, the distance from the surface of the photosensitive film layer far away from the circuit layer to the surface of the circuit layer far away from the substrate comprises 0.4-1 μm;
the distance from the surface of the first electrode layer far away from the circuit layer to the surface of the circuit layer far away from the substrate comprises 90-110 nm.
Optionally, the distance between two adjacent first electrodes includes 0.4-0.8 μm.
Optionally, forming a photosensitive film layer on a side of the first electrode layer away from the circuit layer includes:
and coating a photosensitive material on the side of the first electrode layer far away from the circuit layer by a spin coating method to form the photosensitive film layer.
Optionally, the photosensitive material includes polyimide or spin-on glass.
Optionally, forming a first electrode layer on a side of the circuit layer away from the substrate includes:
plating a layer of metal on one side of the circuit layer, which is far away from the substrate, by adopting a physical vapor deposition method to form a metal film layer;
and photoetching the metal film layer to form the first electrode layer.
Optionally, before forming the first electrode layer on the side of the circuit layer away from the substrate, the method further includes:
and cleaning and drying the substrate.
Optionally, the manufacturing method further includes forming a light emitting function layer on a side of the pixel defining layer away from the substrate;
and forming a second electrode layer on one side of the light-emitting functional layer far away from the substrate.
The embodiment of the invention provides a method for manufacturing a micro display, which comprises the steps of forming a first electrode layer on one side, away from a substrate, of a circuit layer, forming a photosensitive film layer on one side, away from the substrate, of the first electrode layer, and then forming a pixel definition layer in an etching mode, wherein the surface, away from the substrate, of the formed pixel definition layer is flush with the surface, away from the substrate, of the first electrode layer, so that the problem that other electrode layers manufactured on one side, away from the substrate, of the first electrode layer are broken is solved. The embodiment of the invention provides a method for manufacturing a micro display, which can prevent a cathode or an anode from being broken.
Drawings
Fig. 1 is a schematic flow chart of a method for manufacturing a microdisplay according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a microdisplay according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of another microdisplay according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of another microdisplay according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of another microdisplay according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of another microdisplay according to an embodiment of the present invention.
Detailed Description
The embodiments of the present invention will be described in further detail with reference to the drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of and not restrictive on the broad invention. It should be further noted that, for convenience of description, only some structures, not all structures, relating to the embodiments of the present invention are shown in the drawings.
Fig. 1 is a schematic flow chart of a method for manufacturing a microdisplay according to an embodiment of the present invention, and referring to fig. 1, the method includes the following steps:
s110 and fig. 2 are schematic structural diagrams of a microdisplay according to an embodiment of the present invention, and referring to fig. 2, a base plate is provided, where the base plate includes a substrate 210 and a circuit layer 220 located on one side of the substrate 210.
Specifically, the substrate 210 and the circuit layer 220 located on one side of the substrate 210 form a substrate of a silicon-based CMOS driving circuit with electrodes.
S120 and fig. 3 are schematic structural diagrams of another microdisplay according to an embodiment of the present invention, and referring to fig. 3, a first electrode layer 230 is formed on a side of the circuit layer 220 away from the substrate 210, where the first electrode layer 230 includes a plurality of first electrodes 231.
Specifically, the first electrode layer 230 may be an anode film layer, and if the first electrode layer 230 is an anode film layer, the first electrode 231 is an anode. The specific process of forming the first electrode layer 230 includes: a metal film layer is deposited on the side of the circuit layer 220 away from the substrate 210, a mask is then placed on the side of the metal film layer away from the substrate, and the metal film layer is then subjected to photolithography to form a first electrode layer 230.
S130 and fig. 4 are schematic structural diagrams of another microdisplay according to an embodiment of the present invention, referring to fig. 4, a photosensitive film 240 is formed on a side of the first electrode layer 230 away from the circuit layer 220, wherein the photosensitive film 240 covers the first electrode layer 230.
Specifically, the photosensitive film layer 240 may be formed on the first electrode layer 230 on a side away from the circuit layer 220 by spin coating. The surface of the photosensitive film layer 240 on the side away from the substrate 210 is flush.
S140 and fig. 5 are schematic structural diagrams of another microdisplay according to an embodiment of the present invention, referring to fig. 5, the photosensitive film layer 240 is etched until a surface of the first electrode layer 230 on a side away from the substrate 210 is flush with a surface of the remaining photosensitive film layer on a side away from the substrate 210, where the remaining photosensitive film layer is a pixel defining layer 250.
Specifically, the surface of the pixel defining layer 250 away from the substrate 210 is flush with the surface of the first electrode layer 230 away from the substrate 210, so that the fracture of other electrode layers on the side of the first electrode layer 230 away from the substrate 210 due to a step difference between the first electrode layer 230 and the pixel defining layer 250 can be avoided. The pixel defining layer 250 can be formed by gas etching or liquid etching on the photosensitive film layer 240, thereby simplifying the process steps and reducing the manufacturing cost. When the first electrode layer 230 is an anode film layer, the method for manufacturing a microdisplay provided by this embodiment can prevent the cathode from being broken.
The embodiment of the invention provides a method for manufacturing a micro display, which comprises the steps of forming a first electrode layer on one side, away from a substrate, of a circuit layer, forming a photosensitive film layer on one side, away from the substrate, of the first electrode layer, and then forming a pixel definition layer in an etching mode, wherein the surface, away from the substrate, of the formed pixel definition layer is flush with the surface, away from the substrate, of the first electrode layer, so that the problem that other electrode layers manufactured on one side, away from the substrate, of the first electrode layer are broken is solved. The embodiment of the invention provides a method for manufacturing a micro display, which can prevent a cathode or an anode from being broken.
Optionally, etching the photosensitive film layer until the surface of the first electrode layer on the side away from the substrate is flush with the surface of the remaining photosensitive film layer on the side away from the substrate includes: and placing the substrate on which the photosensitive film layer is formed into an alkaline solution, and etching the photosensitive film layer by the alkaline solution until the surface of one side, away from the substrate, of the first electrode layer is flush with the surface of the other side, away from the substrate, of the rest photosensitive film layer.
Specifically, the substrate on which the photosensitive film layer is to be formed can be directly placed in a tank filled with an alkaline solution, so that the alkaline solution etches the photosensitive film layer until the surface of the first electrode layer on the side far from the substrate is flush with the surface of the rest of the photosensitive film layer on the side far from the substrate, and a pixel defining layer is formed. According to the method for manufacturing the micro display, the pixel definition layer is formed without photoetching, and the pixel definition layer can be formed only by etching with alkaline solution, so that the process flow for manufacturing the micro display is reduced, and the manufacturing cost is reduced.
Optionally, the alkaline solution comprises a developer solution.
Specifically, the developer is weak alkaline solution, chooses for use the developer to carry out the sculpture to the sensitization rete, on the one hand, can control the sculpture rate, prevents that the sculpture from causing the pixel to define the layer and keep away from the surface of substrate and the surperficial not parallel and level and the gap that the substrate was kept away from to first electrode layer too fast too big, and on the other hand, the developer easily acquires and the cost is lower to further reduce microdisplay's cost of manufacture.
Optionally, with continued reference to FIG. 4, the distance h1 from the surface of the photosensitive film layer 240 away from the circuit layer 220 to the surface of the circuit layer 220 away from the substrate 210 comprises 0.4-1 μm; the distance from the surface of the first electrode layer 230 far away from the circuit layer 220 to the surface h2 of the circuit layer 220 far away from the substrate 210 comprises 90-110 nm.
Specifically, h1 represents the distance from the surface of the photosensitive film layer 240 away from the circuit layer 220 to the surface of the circuit layer 220 away from the substrate 210, and h2 represents the distance from the surface of the first electrode layer 230 away from the circuit layer 220 to the surface of the circuit layer 220 away from the substrate 210. The h1 is set within the range of 0.4-1 μm, so that the photosensitive film layer 240 can be ensured to completely cover the first electrode layer 230, and the setting of the h1 with the thickness not greater than 1 μm can prevent the etching time from being too long due to the overlarge thickness of the photosensitive film layer 240, thereby further saving the time for forming the pixel defining layer.
Optionally, the distance between two adjacent first electrodes includes 0.4 to 0.8 μm.
Specifically, the distance between two adjacent first electrodes is set within the range of 0.4-0.8 μm, so that a micro display with high pixel density can be manufactured, and the working performance of the micro display is improved.
Optionally, forming a photosensitive film layer on a side of the first electrode layer away from the circuit layer includes: and coating a photosensitive material on the side of the first electrode layer far away from the circuit layer by a spin coating method to form a photosensitive film layer.
Specifically, after the photosensitive film layer is manufactured by adopting a spin coating method, the surface of the photosensitive film layer away from the substrate is flush, so that the photosensitive film layer is basically kept flush in the etching process of alkaline solution, and finally the surface of the formed pixel definition layer away from the substrate and the surface of the first electrode layer away from the substrate are flush, so that the first electrode layer is prevented from being broken when other electrode layers are manufactured on one side of the first electrode layer away from the substrate.
Optionally, the photosensitive material comprises polyimide or spin-on glass.
In particular, polyimide and spin-on glass are readily available and inexpensive, and in addition, the surface of the photosensitive film layer away from the substrate made of polyimide or spin-on glass is more level than other photosensitive materials.
Optionally, the forming a first electrode layer on the side of the circuit layer away from the substrate includes: plating a metal layer on one side of the circuit layer away from the substrate by adopting a physical vapor deposition method to form a metal film layer; and photoetching the metal film layer to form a first electrode layer.
Specifically, compared with other methods for manufacturing the metal film layer, the physical vapor deposition method is simple in process, environment-friendly, free of pollution, low in material consumption, uniform and compact in formed film and strong in binding force with the circuit layer.
Optionally, before forming the first electrode layer on the side of the circuit layer away from the substrate, the method further includes: and cleaning and drying the substrate.
Specifically, the substrate is cleaned and dried, so that the situation that the metal film layer is not strongly combined with the circuit layer in the substrate due to pollutants on the surface of the substrate can be prevented, the metal film layer after the manufacture is prevented from falling off, and the working performance of the micro-display is prevented from being influenced due to the fact that the pollutants are doped in the metal film layer.
Optionally, fig. 6 is a schematic structural diagram of another microdisplay according to an embodiment of the present invention, and referring to fig. 6, the manufacturing method further includes forming a light emitting functional layer 260 on a side of the pixel defining layer 250 away from the substrate 210; a second electrode layer 270 is formed on the light-emitting function layer 260 on the side away from the substrate 210.
Specifically, the second electrode layer 270 further includes an encapsulation layer 280 on a side away from the light emitting functional layer 260, the encapsulation layer 280 may be made of silicon nitride or aluminum oxide, the thickness of the encapsulation layer 280 may be 1um, and the encapsulation layer 280 is used for protecting the second electrode layer 270. The electrodes in the silicon-based CMOS drive circuit containing the electrodes are connected to the first electrode layer 230 and the second electrode layer 270 in the microdisplay, thereby making the first electrode layer 230 and the second electrode layer 270 conductive. When the first electrode layer 230 is flush with the surface of the pixel defining layer 250, the surface of the second electrode layer 270 formed on the side of the first electrode layer 230 away from the substrate 210 is also flush, so as to avoid the second electrode layer 270 breaking when the second electrode layer 270 is formed on the uneven surface.
It should be noted that the foregoing is only a preferred embodiment of the present invention and the technical principles applied. Those skilled in the art will appreciate that the embodiments of the present invention are not limited to the specific embodiments described herein, and that various obvious changes, adaptations, and substitutions are possible, without departing from the scope of the embodiments of the present invention. Therefore, although the embodiments of the present invention have been described in more detail through the above embodiments, the embodiments of the present invention are not limited to the above embodiments, and many other equivalent embodiments may be included without departing from the concept of the embodiments of the present invention, and the scope of the embodiments of the present invention is determined by the scope of the appended claims.
Claims (10)
1. A method of fabricating a microdisplay, comprising:
providing a base plate, wherein the base plate comprises a substrate and a circuit layer positioned on one side of the substrate;
forming a first electrode layer on one side of the circuit layer, which is far away from the substrate, wherein the first electrode layer comprises a plurality of first electrodes;
forming a photosensitive film layer on one side of the first electrode layer, which is far away from the circuit layer, wherein the photosensitive film layer covers the first electrode layer;
and etching the photosensitive film layer until the surface of one side, away from the substrate, of the first electrode layer is flush with the surface of the other side, away from the substrate, of the photosensitive film layer in the rest part, wherein the photosensitive film layer in the rest part is a pixel definition layer.
2. The method of claim 1, wherein etching the photosensitive film layer until a surface of the first electrode layer on a side away from the substrate is flush with a surface of the remaining photosensitive film layer on a side away from the substrate comprises:
and putting the substrate on which the photosensitive film layer is formed into an alkaline solution, and etching the photosensitive film layer by the alkaline solution until the surface of one side, away from the substrate, of the first electrode layer is flush with the surface of the other side, away from the substrate, of the photosensitive film layer.
3. The method of claim 2, wherein the alkaline solution comprises a developer solution.
4. The manufacturing method of claim 1, wherein the distance from the surface of the photosensitive film layer far away from the circuit layer to the surface of the circuit layer far away from the substrate comprises 0.4-1 μm;
the distance from the surface of the first electrode layer far away from the circuit layer to the surface of the circuit layer far away from the substrate comprises 90-110 nm.
5. The method according to claim 1, wherein a pitch between two adjacent first electrodes is 0.4 to 0.8 μm.
6. The method of claim 1, wherein forming a photosensitive film layer on a side of the first electrode layer away from the circuit layer comprises:
and coating a photosensitive material on the side of the first electrode layer far away from the circuit layer by a spin coating method to form the photosensitive film layer.
7. The method of manufacturing according to claim 6, wherein the photosensitive material comprises polyimide or spin-on glass.
8. The method of claim 1, wherein forming a first electrode layer on a side of the circuit layer away from the substrate comprises:
plating a layer of metal on one side of the circuit layer, which is far away from the substrate, by adopting a physical vapor deposition method to form a metal film layer;
and photoetching the metal film layer to form the first electrode layer.
9. The method according to claim 1, further comprising, before forming the first electrode layer on the side of the circuit layer away from the substrate:
and cleaning and drying the substrate.
10. The manufacturing method according to claim 1, further comprising forming a light-emitting function layer on a side of the pixel defining layer away from the substrate;
and forming a second electrode layer on one side of the light-emitting functional layer far away from the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110799420.0A CN113571669A (en) | 2021-07-15 | 2021-07-15 | Method for manufacturing micro display |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110799420.0A CN113571669A (en) | 2021-07-15 | 2021-07-15 | Method for manufacturing micro display |
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| US20040239238A1 (en) * | 2003-05-30 | 2004-12-02 | Samsung Sdi Co., Ltd. | Organic electroluminescent display device and fabrication method thereof |
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| CN112259704A (en) * | 2020-10-21 | 2021-01-22 | 安徽熙泰智能科技有限公司 | Process method for preventing cathode on substrate from cracking |
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-
2021
- 2021-07-15 CN CN202110799420.0A patent/CN113571669A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20040239238A1 (en) * | 2003-05-30 | 2004-12-02 | Samsung Sdi Co., Ltd. | Organic electroluminescent display device and fabrication method thereof |
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