CN113571642B - Organic photovoltaic element - Google Patents
Organic photovoltaic element Download PDFInfo
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- CN113571642B CN113571642B CN202010354077.4A CN202010354077A CN113571642B CN 113571642 B CN113571642 B CN 113571642B CN 202010354077 A CN202010354077 A CN 202010354077A CN 113571642 B CN113571642 B CN 113571642B
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- 238000013086 organic photovoltaic Methods 0.000 title claims abstract description 53
- 239000000463 material Substances 0.000 claims abstract description 78
- 230000005525 hole transport Effects 0.000 claims abstract description 55
- 230000000903 blocking effect Effects 0.000 claims abstract description 49
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 claims abstract description 31
- 238000004770 highest occupied molecular orbital Methods 0.000 claims description 20
- 125000005259 triarylamine group Chemical group 0.000 claims description 6
- 229920000642 polymer Polymers 0.000 claims description 5
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 4
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- 230000005540 biological transmission Effects 0.000 claims 3
- 238000006243 chemical reaction Methods 0.000 abstract description 12
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- 230000000171 quenching effect Effects 0.000 abstract description 7
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- 238000000034 method Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 229920002873 Polyethylenimine Polymers 0.000 description 4
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000004094 surface-active agent Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical group CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
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- GUBGYTABKSRVRQ-PICCSMPSSA-N Maltose Natural products O[C@@H]1[C@@H](O)[C@H](O)[C@@H](CO)O[C@@H]1O[C@@H]1[C@@H](CO)OC(O)[C@H](O)[C@H]1O GUBGYTABKSRVRQ-PICCSMPSSA-N 0.000 description 1
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- GUBGYTABKSRVRQ-QUYVBRFLSA-N beta-maltose Chemical compound OC[C@H]1O[C@H](O[C@H]2[C@H](O)[C@@H](O)[C@H](O)O[C@@H]2CO)[C@H](O)[C@@H](O)[C@@H]1O GUBGYTABKSRVRQ-QUYVBRFLSA-N 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000006059 cover glass Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Natural products CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005227 gel permeation chromatography Methods 0.000 description 1
- 229960001031 glucose Drugs 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 229960002160 maltose Drugs 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000010129 solution processing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229960004793 sucrose Drugs 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/451—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a metal-semiconductor-metal [m-s-m] structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
An organic photovoltaic device comprises a first electrode, an electron transport layer, a photoactive layer, a hole transport unit and a second electrode. The photoactive layer contains an electron donor material and an electron acceptor material. The hole transport unit comprises a hole transport layer and an electron blocking layer, wherein the electron blocking layer contains an electron blocking material, and the energy of the lowest unoccupied molecular orbital of the electron blocking material is higher than that of the lowest unoccupied molecular orbital of the electron acceptor material. The organic photovoltaic element can reduce recombination quenching of electrons at an electrode interface, and further can improve energy conversion efficiency.
Description
Technical Field
The present invention relates to an organic photovoltaic device, and more particularly, to an organic photovoltaic device including an electron blocking layer.
Background
The organic photovoltaic element (organic solar cell) has the advantages of light weight, low cost, flexibility, solution processing and the like, the element structure is easy to simplify and fast in process, the important application potential is shown, and great attention is paid to academia and industry. Compared with the traditional inorganic photovoltaic element, the traditional organic photovoltaic element has unique advantages and application prospect. The photoactive layer material of the organic photovoltaic element and the mass production technology thereof can be applied to solution coating at room temperature, so that the photoactive layer material can be applied to a large-area process, can also be applied to a flexible substrate, and has the advantage of flexibility if being applied to a roll-to-roll mode.
The current industry uses coating technology for large area processes to produce organic photovoltaic devices that are predominantly substrate/Indium Tin Oxide (ITO) thin film/electron transport layer/photoactive layer/hole transport layer/silver. In view of the substrate/ITO film/electron transport layer/photoactive layer/hole transport layer/silver element, the electron transport layer and the hole transport layer usually use metal oxide as materials, for example, the electron transport layer uses zinc oxide with high temperature process, while the hole transport layer uses vacuum vapor deposited molybdenum trioxide, however, the high temperature process is not suitable for large area process when mass production; in addition, the vacuum evaporation deposition is limited by cost, and is not suitable for mass production, so that the preparation method is a great challenge for mass production and preparation of organic photovoltaic elements in industry. Currently, the industry generally uses the polymer PEDOT: PSS [ poly (3, 4-ethylidepoxithiophen): poly (styrenesulfonate) ] as a hole transport material, which can be coated and is suitable for large-area processes to solve the problem of mass production.
In the photoactive layer of the organic photovoltaic element, the electron donor material has a lower highest occupied molecular orbital (Highest Occupied Molecular Orbital; HOMO), and can reach a higher open circuit voltage by matching with a proper electron acceptor material. However, in the element mainly comprising a substrate, an Indium Tin Oxide (ITO) film, an electron transport layer, a photoactive layer, and PEDOT PSS/silver, the mismatch of the PEDOT PSS energy levels causes recombination quenching of electrons at an electrode interface, and thus the situation that the element has electric leakage occurs, resulting in loss of open-circuit voltage and filling factor, and finally affecting the energy conversion efficiency of the organic photovoltaic element.
Therefore, how to improve the existing organic photovoltaic element, so that the recombination quenching of electrons at the electrode interface can be reduced, and the energy conversion efficiency of the organic photovoltaic element can be improved, and the organic photovoltaic element is the target of the current research.
Disclosure of Invention
Accordingly, an object of the present invention is to provide an organic photovoltaic device capable of reducing occurrence of recombination quenching of electrons at an electrode interface and improving energy conversion efficiency.
Thus, the organic photovoltaic device of the present invention comprises a first electrode, an electron transport layer, a photoactive layer, a hole transport unit, and a second electrode.
The electron transport layer is disposed on the first electrode.
The photoactive layer is positioned on a side of the electron transport layer opposite to the first electrode and contains an electron donor material and an electron acceptor material.
The hole transport unit is positioned on one side of the photoactive layer opposite to the electron transport layer and comprises a hole transport layer and an electron blocking layer, wherein the electron blocking layer contains an electron blocking material, and the energy of the lowest unoccupied molecular orbital (Lowest Unoccupied Molecular Orbital; LUMO) of the electron blocking material is higher than the energy of the Lowest Unoccupied Molecular Orbital (LUMO) of the electron acceptor material.
The second electrode is positioned on a side of the hole transport unit opposite to the photoactive layer.
The invention has the following effects: because the organic photovoltaic element comprises the electron blocking layer and the energy of the Lowest Unoccupied Molecular Orbital (LUMO) of the electron blocking material is higher than that of the Lowest Unoccupied Molecular Orbital (LUMO) of the electron acceptor material, the organic photovoltaic element can reduce recombination quenching of electrons at an electrode interface and further improve energy conversion efficiency.
In addition, it is added that the materials used for the hole transport unit of the organic photovoltaic element of the present invention can be formulated as a solution for coating, and thus are also suitable for large-area and roll-to-roll production processes.
The following is a detailed description of the present invention:
the invention relates to an organic photovoltaic element, which comprises a first electrode, an electron transport layer, a photoactive layer, a hole transport unit and a second electrode.
Preferably, the material of the first electrode is, for example, but not limited to, indium Tin Oxide (ITO).
The electron transport layer is disposed on the first electrode.
Preferably, the material of the electron transport layer is, for example, but not limited to, a zwitterionic modified polyethylenimine (Zwitterionic Polyethyleneimine).
The photoactive layer is positioned on a side of the electron transport layer opposite to the first electrode and contains an electron donor material and an electron acceptor material.
Preferably, the electron donor material has a structure such as, but not limited to, the following:
wherein m is an integer greater than 1.
Preferably, the electron acceptor material is, for example but not limited to
The hole transport unit is positioned on one side of the photoactive layer opposite to the electron transport layer and comprises a hole transport layer and an electron blocking layer.
Preferably, the hole transport layer is located on a side of the photoactive layer opposite the electron transport layer, and the electron blocking layer is located on a side of the hole transport layer opposite the photoactive layer.
Preferably, the electron blocking layer is located on a side of the photoactive layer opposite to the electron transport layer, and the hole transport layer is located on a side of the electron blocking layer opposite to the photoactive layer.
Preferably, the hole transport layer contains a hole transport material, and the hole transport material has a conductivity higher than 0.01S/cm. More preferably, the hole transport material has a conductivity in the range of 0.1 to 300S/cm.
Still more preferably, the hole transport material comprises the polymer PEDOT: PSS. The polymer PEDOT PSS is, for example but not limited to, of the type Al 4083, HTL Solar or PH1000 from Heraeus Corp.
Still more preferably, the hole transport layer further comprises an additive selected from dimethyl sulfoxide, ethylene glycol, or a combination of the foregoing.
Still more preferably, the additive is present in an amount ranging from 0.01 to 8wt% based on 100wt% (wt%) of the total weight of the various components contained in the hole transport layer.
Still more preferably, the hole transport layer further comprises a surfactant. Such as, but not limited to, fluorosurfactants (e.g., duPont model FSO-100, FSN-100, FS-300), siliceous surfactants (e.g., BYK company model BYK-306, BYK-323, BYK-333), polyhydroxy compounds (e.g., D-Glucose, D-Sucrose, D-Maltose), or combinations of the foregoing.
Still more preferably, the weight of the surfactant is in the range of 0.01 to 5wt% based on 100wt% of the total weight of the various components contained in the hole transport layer.
Preferably, the hole transport layer comprises a hole transport material, and the Highest Occupied Molecular Orbital (HOMO) of the hole transport material is higher than the Highest Occupied Molecular Orbital (HOMO) of the electron donor material.
More preferably, the energy of the Highest Occupied Molecular Orbital (HOMO) of the hole transporting material is located between the energy of the Highest Occupied Molecular Orbital (HOMO) of the electron donor material and the work function (work function) of the second electrode.
Preferably, the thickness of the hole transport layer is in the range of 5 to 200nm. More preferably, the thickness of the hole transport layer is in the range of 20 to 100nm.
The electron blocking layer contains an electron blocking material, and the energy of the Lowest Unoccupied Molecular Orbital (LUMO) of the electron blocking material is higher than the energy of the Lowest Unoccupied Molecular Orbital (LUMO) of the electron acceptor material.
Preferably, the energy difference between the Lowest Unoccupied Molecular Orbital (LUMO) of the electron blocking material and the Lowest Unoccupied Molecular Orbital (LUMO) of the electron acceptor material is greater than 1.0eV.
More preferably, the electron blocking material is a triarylamine derivative. The triarylamine derivative refers to a small molecular compound or a high molecular polymer having a triarylamine structure. Still more preferably, the electron blocking material is a triarylamine derivative having one of the following structures:
wherein n is an integer greater than 1.
Preferably, the thickness of the electron blocking layer ranges from 2 to 100nm. More preferably, the electron blocking layer has a thickness in the range of 5 to 50nm.
The second electrode is positioned on a side of the hole transport unit opposite to the photoactive layer.
Preferably, the material of the second electrode is, for example but not limited to, silver.
Preferably, the organic photovoltaic device of the present invention further comprises a substrate. The substrate is positioned on the side of the first electrode opposite to the electron transport layer.
More preferably, the material of the substrate is, for example, but not limited to, glass.
Drawings
Other features and advantages of the invention will be apparent from the following description of the embodiments with reference to the accompanying drawings, in which:
fig. 1 is a schematic side view illustrating the structure of a first embodiment of an organic photovoltaic element according to the present invention;
FIG. 2 is a schematic side view illustrating the structure of a second embodiment of the organic photovoltaic element of the present invention; and
Fig. 3 is a graph showing current density-voltage curves of the organic photovoltaic devices of the comparative examples and examples 1 to 5.
Wherein reference numerals are as follows:
11. first electrode
12. Electron transport layer
13. Photoactive layer
14. Hole transport unit
141. Hole transport layer
142. Electron blocking layer
15. Second electrode
16. Substrate board
Detailed Description
Referring to fig. 1, a structure of a first embodiment of the organic photovoltaic device according to the present invention is shown. The organic photovoltaic device comprises a first electrode 11, an electron transport layer 12, a photoactive layer 13, a hole transport unit 14 and a second electrode 15.
The electron transport layer 12 is located on the first electrode 11.
The photoactive layer 13 is located on the side of the electron transport layer 12 opposite the first electrode 11.
The hole transporting unit 14 is located on the opposite side of the photoactive layer 13 from the electron transporting layer 12, and includes a hole transporting layer 141 and an electron blocking layer 142. The hole transport layer 141 is located on the opposite side of the photoactive layer 13 from the electron transport layer 12, and the electron blocking layer 142 is located on the opposite side of the hole transport layer 141 from the photoactive layer 13.
The second electrode 15 is located on the opposite side of the hole transport unit 14 from the photoactive layer 13.
The organic photovoltaic device of the present invention further comprises a substrate 16 on the side of the first electrode 11 opposite to the electron transport layer 12.
It is noted that the positions of the hole transporting layer 141 and the electron blocking layer 142 of the hole transporting unit 14 are not limited to the positions of the first embodiment, and referring to fig. 2, in the second embodiment, the electron blocking layer 142 is located on the opposite side of the photoactive layer 13 from the electron transporting layer 12, and the hole transporting layer 141 is located on the opposite side of the electron blocking layer 142 from the photoactive layer 13.
< examples 1 to 5>
Organic photovoltaic element
The organic photovoltaic device structures of examples 1 to 5 are shown in fig. 1, which are respectively prepared according to the electron donor material and the electron acceptor material of table 1, the electron blocking material of table 2, and the following methods:
the patterned Indium Tin Oxide (ITO) glass (12Ω/≡) was sequentially cleaned with a cleaning agent, deionized water, acetone and isopropyl alcohol in an ultrasonic oscillation tank for 15min, then cleaned by ultrasonic oscillation, and then surface-treated in a UV-ozone cleaner for 20min, thereby forming the substrate 16 (glass) and the first electrode 11 (ITO).
The electron transport layer 12 was formed by applying a zwitterionic modified polyethyleneimine (Zwitterionic Polyethyleneimine) to the first electrode 11 and placing it on a heating plate, and baking it at 120 ℃ for 5min.
The electron donor material (10 mg) and the electron acceptor material (12 mg) listed in Table 1 were mixed together with the solvent ortho-xylene (1 mL) to prepare photoactive layer solutions. The photoactive layer solution was applied to the electron transport layer 12 and placed on a hot plate, and after removal of the solvent, a photoactive layer 13 having a thickness of about 100nm was formed.
The conductive polymer is produced by Heraeus company, germany, model Clevelos TM PH1000 (HOMO about-4.90 eV, conductivity 850S/cm) was applied to the photoactive layer 13 as a solution and placed on a hot plate, and baked at 100deg.C for 5min, after which the hole transport layer 141 was formed to a thickness of about 30 nm.
An electron blocking material (1.5 mg) having the chemical structure shown in Table 2 was mixed with toluene (1 mL), a solvent, to form an electron blocking layer solution. The electron blocking layer solution was coated on the hole transport layer 141 and baked at 100 c for 2min to form the electron blocking layer 142 having a thickness of about 10 nm.
Feeding the obtained element into a vacuum chamber, and heating at 1.0x10 -6 At torr, silver metal (work function-4.70 eV) is evaporated to form the second electrode 15 with a thickness of about 100nm.
Finally, epoxy resin of Epoxy Technology model epoteog 116-31 is coated on the element, a cover glass is covered on the element, and after the element is pressed, the Epoxy resin is cured under a 365nm lamp source, so that the organic photovoltaic elements of examples 1-5 are obtained.
TABLE 1
Weight average molecular weight and number average molecular weight were measured by gel permeation chromatography.
TABLE 2
PDI: polydispersity index molecular weight distribution index, pdi=mw/Mn
Comparative example
Organic photovoltaic element
The organic photovoltaic element of the comparative example was similar to the organic photovoltaic elements of examples 1 to 5, except that the hole transport unit of the organic photovoltaic element of the comparative example did not include an electron blocking layer.
< test of organic photovoltaic element Properties >
The measurement area of the organic photovoltaic element was defined as 0.04cm via the metal mask 2 . Keithley 2400 as the power supply was controlled by Lab-View program at light intensity of 100mW/cm 2 The electrical properties of the organic photovoltaic device were measured under irradiation of AM1.5G simulated sunlight (SAN-EI XES-40S 3) and recorded by a computer program to obtain a current-voltage curve (see FIG. 3).
Table 3 shows the characteristics of the organic photovoltaic devices of comparative examples and examples 1 to 5, V oc Represents open voltage (open voltage), J sc Represents short-circuit current (short-circuit current), FF represents fill factor (fill factor), and PCE represents energy conversion efficiency (energy conversion efficiency). Referring also to FIG. 3, the short circuit current and the open circuit voltage are each the intercept of the current density-voltage curve on the Y-axis and the X-axis. In addition, the fill factor is a value obtained by dividing the area which can be plotted in the curve by the product of the short-circuit current and the open-circuit voltage, and when three values such as the open-circuit voltage, the short-circuit current, and the fill factor are divided by the irradiated light, the energy conversion efficiency is obtained, and a higher value is preferable.
TABLE 3 Table 3
As can be seen from the results of Table 3, the comparative example without the electron blocking layer had an open circuit voltage of 0.66V and a current density of 23.52mA/cm 2 The filling factor is 57, and the energy conversion efficiency is 8.8%. The organic photovoltaic devices of examples 1 to 5 (with electron blocking layer) were higher in open circuit voltage, fill factor, and energy conversion efficiency than the comparative examples.
As is clear from the foregoing description, the organic photovoltaic device (examples 1 to 5) of the present invention includes an electron blocking layer, and the energy of the Lowest Unoccupied Molecular Orbital (LUMO) of the electron blocking material (examples 1 to 5 are respectively-2.13 eV, -2.32eV, -2.48eV, -2.66eV, -2.42 eV) is higher than the energy (-4.10 eV) of the Lowest Unoccupied Molecular Orbital (LUMO) of the electron acceptor material, so that the open circuit voltage can be increased, the recombination quenching of electrons at the electrode interface can be reduced, further, the occurrence of the device having electric leakage can be avoided, and the filling factor can be increased due to the increase of the filling factor, so that the energy conversion efficiency of the organic photovoltaic device can be improved. In examples 1 to 5, the energy difference between the lowest unoccupied molecular orbital of the electron blocking material and the lowest unoccupied molecular orbital of the electron acceptor material was 1.97eV (-2.13 eV difference from-4.10 eV), 1.78eV, 1.62eV, 1.44eV, and 1.68eV, respectively, which were all larger than 1.0eV. The hole transport layer contains a hole transport material, and the energy (-4.90 eV) of the highest occupied molecular orbital of the hole transport material (PH 1000) is higher than the energy (-5.50 eV) of the highest occupied molecular orbital of the electron donor material (Table I). The energy of the highest occupied molecular orbital of the hole transporting material (PH 1000) (-4.90 eV) is located between the energy of the highest occupied molecular orbital of the electron donor material (Table I) (-5.50 eV) and the work function of the second electrode (silver) (-4.70 eV).
In summary, since the organic photovoltaic device of the present invention includes the electron blocking layer and the energy of the Lowest Unoccupied Molecular Orbital (LUMO) of the electron blocking material is higher than that of the Lowest Unoccupied Molecular Orbital (LUMO) of the electron acceptor material, the organic photovoltaic device of the present invention can reduce the occurrence of recombination quenching of electrons at the electrode interface, and thus can improve the energy conversion efficiency, and thus can achieve the object of the present invention.
However, the foregoing is merely illustrative of the present invention and, as such, it is not intended to limit the scope of the invention, but rather to cover all modifications and variations within the scope of the present invention as defined by the appended claims and their equivalents.
Claims (8)
1. An organic photovoltaic element comprising:
a first electrode;
an electron transport layer on the first electrode;
a photoactive layer disposed on a side of the electron transport layer opposite the first electrode and comprising an electron donor material and an electron acceptor material;
the hole transmission unit is positioned on one side of the photoactive layer opposite to the electron transmission layer and comprises a hole transmission layer and an electron blocking layer, the electron blocking layer contains an electron blocking material, and the energy of the lowest unoccupied molecular track of the electron blocking material is higher than that of the lowest unoccupied molecular track of the electron acceptor material; and a second electrode located at one side of the hole transport unit opposite to the photoactive layer;
the energy difference between the lowest unoccupied molecular orbital of the electron blocking material and the lowest unoccupied molecular orbital of the electron acceptor material is more than 1.0eV, and the electron blocking material is a triarylamine derivative.
2. The organic photovoltaic element according to claim 1, wherein the electron blocking material is a triarylamine derivative having one of the following structures:
n is an integer greater than 1.
3. The organic photovoltaic element according to claim 1, wherein the hole transport layer contains a hole transport material, and the hole transport material has a conductivity higher than 0.01S/cm.
4. The organic photovoltaic element according to claim 3, wherein the hole transport material has a conductivity in the range of 0.1 to 300S/cm.
5. The organic photovoltaic element according to claim 4, wherein the hole transporting material comprises a polymer PEDOT: PSS.
6. The organic photovoltaic device according to claim 5, wherein the hole transport layer further comprises an additive selected from dimethyl sulfoxide, ethylene glycol, or a combination thereof.
7. The organic photovoltaic device according to claim 1, wherein the hole transport layer comprises a hole transport material and the highest occupied molecular orbital of the hole transport material is higher than the highest occupied molecular orbital of the electron donor material.
8. The organic photovoltaic device according to claim 7, wherein the energy of the highest occupied molecular orbital of the hole transporting material is between the energy of the highest occupied molecular orbital of the electron donor material and the work function of the second electrode.
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