CN113571564B - Display substrate and display device - Google Patents
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- CN113571564B CN113571564B CN202110835697.4A CN202110835697A CN113571564B CN 113571564 B CN113571564 B CN 113571564B CN 202110835697 A CN202110835697 A CN 202110835697A CN 113571564 B CN113571564 B CN 113571564B
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The present disclosure provides a display substrate, including: a substrate, and a light emitting device disposed on the substrate; wherein, the display substrate still includes: a dimming layer arranged on the light emitting side of the light emitting device; the transmittance of the light modulation layer increases and decreases with temperature, and the luminous efficiency of the light emitting device increases and decreases with temperature. The disclosure also provides a display device.
Description
Technical Field
The disclosure relates to the technical field of display, and in particular relates to a display substrate and a display device.
Background
An Organic Light-EMITTING DEVICE (OLED) display substrate is a display substrate different from a conventional Liquid crystal display (Liquid CRYSTAL DISPLAY, LCD), and has advantages of active Light emission, good temperature characteristics, low power consumption, fast response, flexibility, ultra-thin and low cost, and the like, and has become one of the important development findings of new generation display devices, and has received more and more attention, wherein when the ambient temperature changes, the display effect is affected, and problems such as color shift of the display occur.
Disclosure of Invention
The present disclosure aims to solve at least one of the technical problems in the prior art, and proposes a display substrate and a display device.
To achieve the above object, in a first aspect, an embodiment of the present disclosure provides a display substrate, including: a substrate, and a light emitting device disposed on the substrate;
wherein, the display substrate further includes: a dimming layer arranged on the light emitting side of the light emitting device;
the transmittance of the light modulation layer increases and decreases with temperature change in a direction opposite to the light emission efficiency of the light emitting device increases and decreases with temperature change.
In some embodiments, the display substrate further comprises: an encapsulation layer;
The light emitting device includes a cathode, an anode, and an organic functional layer disposed between the cathode and the anode; the packaging layer is positioned on one side of the cathode, which is away from the substrate, and the dimming layer is positioned on one side of the packaging layer, which is away from the substrate.
In some embodiments, the organic functional layer comprises: the electron injection layer, the electron transport layer, the hole blocking layer, the light emitting layer, the electron blocking layer, the hole transport layer and the hole injection layer are sequentially stacked.
In some embodiments, the display substrate further comprises: a light extraction layer located between the encapsulation layer and the cathode.
In some embodiments, the light emitting device includes a plurality of light emitting layers, the dimming layer is disposed opposite at least a portion of the plurality of light emitting layers, the dimming layer includes a plurality of sub-dimming layers, one of the sub-dimming layers corresponds to one of the light emitting layers, and a trend that a transmittance of one of the sub-dimming layers increases and decreases with a temperature change is opposite to a trend that a light emitting efficiency of the corresponding light emitting layer increases and decreases with a temperature change.
In some embodiments, the light emitting device includes a red light emitting layer, a green light emitting layer, and a blue light emitting layer, and the dimming layer includes at least one of a corresponding red sub-dimming layer, green sub-dimming layer, and blue sub-dimming layer.
In some embodiments, the dimming layer comprises the green sub-dimming layer and/or the blue sub-dimming layer, the transmittance of the green sub-dimming layer increases with increasing temperature, and the transmittance of the blue sub-dimming layer decreases with increasing temperature.
In some embodiments, the dimming layer comprises a filter material whose dimming parameter increases and decreases with temperature, the dimming parameter comprising one of refractive index and light absorption coefficient;
The filter material corresponding to the green sub-dimming layer is made of a liquid crystal polymer material or a silicon dioxide material;
and the light filtering material corresponding to the blue sub-dimming layer is made of vanadium dioxide material.
In some embodiments, the light transmittance of the dimming layer increases or decreases in a range of 3% to 10% of its reference light transmittance; the thickness interval of the dimming layer is 1-10 microns.
In a second aspect, embodiments of the present disclosure further provide a display device, including: the display substrate as in any one of the above embodiments.
Drawings
The accompanying drawings are included to provide a further understanding of the disclosure, and are incorporated in and constitute a part of this specification, illustrate embodiments of the disclosure and together with the description serve to explain the disclosure, without limitation to the disclosure. The above and other features and advantages will become more readily apparent to those skilled in the art by describing in detail exemplary embodiments with reference to the attached drawings, in which:
fig. 1 is a schematic structural diagram of a display substrate according to an embodiment of the disclosure;
Fig. 2 is a schematic diagram of temperature-luminous efficiency corresponding to a light emitting device according to an embodiment of the disclosure;
fig. 3 is a schematic structural diagram of another display substrate according to an embodiment of the disclosure;
fig. 4 is a cross-sectional view of a driving transistor and a light emitting device according to an embodiment of the present invention;
fig. 5 is a cross-sectional view of another driving transistor and a light emitting device according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of a display substrate according to another embodiment of the disclosure;
Fig. 7 is a schematic diagram of wavelength-transmittance corresponding to a sub-dimming layer according to an embodiment of the present disclosure.
Detailed Description
In order to enable those skilled in the art to better understand the technical solutions of the present disclosure, a display substrate and a display device provided by the present disclosure are described in detail below with reference to the accompanying drawings.
Example embodiments will be described more fully hereinafter with reference to the accompanying drawings, but may be embodied in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used herein, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. Accordingly, a first element, component, or module discussed below could be termed a second element, component, or module without departing from the teachings of the present disclosure.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and the present disclosure, and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
Fig. 1 is a schematic structural diagram of a display substrate according to an embodiment of the disclosure. As shown in fig. 1, the display substrate includes: a substrate 1, a light emitting device 2 provided on the substrate 1, and a dimming layer 5 provided on the light emitting side of the light emitting device.
The trend of increasing and decreasing the transmittance of the dimming layer 5 with the temperature change is opposite to the trend of increasing and decreasing the luminous efficiency of the light emitting device 2 with the temperature change, that is, if the luminous efficiency of the light emitting device 2 increases with the temperature increase, the transmittance of the dimming layer 5 decreases with the temperature increase, and correspondingly, if the luminous efficiency of the light emitting device 2 decreases with the temperature increase, the transmittance of the dimming layer 5 increases with the temperature increase.
Fig. 2 is a schematic diagram of temperature-luminous efficiency corresponding to a light emitting device according to an embodiment of the disclosure.
Specifically, taking an organic light emitting diode display substrate as an example, since the organic light emitting diode display substrate is made of organic materials and emits light autonomously, natural defects exist in extreme environments such as high temperature, low temperature and the like, and the light emitting efficiency of a red light emitting device, a green light emitting device and a blue light emitting device is inconsistent with the trend of changing along with the change of the environmental temperature, so that the color of white light of the substrate is deviated at different temperatures, and the phenomena such as bluing or yellowing occur.
As shown in fig. 2, in (a), a temperature-luminous efficiency relationship curve corresponding to a blue light emitting device is shown, and the luminous efficiency of the blue light emitting device is continuously improved as the temperature increases; in (b), a temperature-luminous efficiency relationship curve corresponding to a green light emitting device is shown, the luminous efficiency of the green light emitting device is continuously decreased as the temperature increases; in (c), a temperature-luminous efficiency relationship curve corresponding to a red light emitting device is shown, the luminous efficiency of the red light emitting device does not change greatly with a change in temperature; therefore, the white balance of the substrate which is adjusted at normal temperature can turn yellow when the substrate is used at low temperature, and turn green when the substrate is used at high temperature, and color cast can be generated in high temperature or low temperature environment due to inconsistent trend of the luminous efficiency of different devices changing along with temperature change.
The embodiment of the disclosure provides a display substrate, which is provided with a dimming layer on the light emitting side of a light emitting device, wherein the trend of increasing or decreasing the transmittance of the dimming layer along with the change of temperature is opposite to the trend of increasing or decreasing the luminous efficiency of the light emitting device along with the change of temperature, so that the luminous efficiency of the light emitting device is correspondingly compensated or inhibited based on the dimming layer, and the problems of display color deviation, color difference and the like caused by the change of environment are avoided.
Fig. 3 is a schematic structural diagram of another display substrate according to an embodiment of the disclosure. Specifically, the structure is an alternative embodiment based on one embodiment of the structure shown in fig. 1; as shown in fig. 3, the display substrate further includes an encapsulation layer 4; the light emitting device further includes a cathode 201, an anode 203, and an organic functional layer disposed between the cathode and the anode; the encapsulation layer 4 is located on the side of the cathode 201 facing away from the substrate 1, and the dimming layer 5 is located on the side of the encapsulation layer 4 facing away from the substrate 1.
In some embodiments, as shown in fig. 3, the organic functional layer 204 includes an electron injection layer 2041, an electron transport layer 2042, a hole blocking layer 2043, a light emitting layer 2044, an electron blocking layer 2045, a hole transport layer 2046, and a hole injection layer 2047, which are sequentially stacked.
In some embodiments, as shown in fig. 3, the display substrate further comprises a light extraction layer 3 between the encapsulation layer 4 and the cathode 201, the light extraction layer 3 also being referred to as a light extraction layer, for increasing the light emitted by the light emitting device by improving light scattering or the like.
In some embodiments, a single light emitting device corresponds to one subpixel; specifically, in some embodiments, each subpixel includes a pixel circuit and a light emitting device; in some embodiments, the pixel circuit includes at least a switching transistor, a driving transistor, a sensing transistor, and a storage capacitor. The switching transistor, the driving transistor, and the sensing transistor may be oxide thin film transistors, or may be polysilicon or amorphous silicon thin film transistors, and the transistor in the embodiments of the present disclosure is exemplified as an oxide transistor in the following description. The switching transistor, the driving transistor, and the sensing transistor may be top gate transistors or bottom gate transistors, and the transistor in the embodiments of the present disclosure is exemplified as a top gate transistor in the following description. It should be noted that the pixel circuit and light emitting device combination structure provided in this embodiment is only one specific alternative implementation, and other combination structures are also applicable to the technical solution of the present application. Since the switching transistor, the driving transistor, and the sensing transistor each include a semiconductor active layer, a gate electrode, and a source electrode and a drain electrode disposed in the same layer, which are sequentially disposed, each film layer on the display substrate will be described below exemplarily based on each layer structure of the driving transistor and the light emitting device.
Fig. 4 is a cross-sectional view of a driving transistor and a light emitting device according to an embodiment of the present invention. As shown in fig. 4, the driving transistor is a top gate oxide thin film transistor, and in order to avoid the influence of light on the electron mobility of the semiconductor active layer 51, a light shielding layer 311 and a buffer layer 301 are sequentially formed on the substrate 10 before the transistor is formed. The driving transistor includes a semiconductor active layer 51, a gate insulating layer 302, a gate electrode 52, an interlayer insulating layer 303, a source electrode 53, and a drain electrode 54, which are sequentially disposed on a side of the substrate 10 facing away from the buffer layer 301. Wherein the source and drain electrodes 53 and 54 are respectively located at opposite sides of the gate electrode 52, and the source and drain electrodes 53 and 54 are respectively in contact with source and drain contact regions located at opposite sides of the semiconductor active layer 51 through vias (e.g., metal vias). It should be appreciated that in some embodiments, this drive transistor may also be bottom gate.
Wherein the storage capacitor comprises a first electrode and a second electrode 32; the second electrode 32 includes a first sub-plate and a second sub-plate 312; wherein the orthographic projections of the first electrode, the first sub-plate and the second sub-plate 312 on the substrate base 10 at least partially overlap.
Specifically, the first electrode is provided in the same layer as the semiconductor active layer 51 and is the same material; the first sub-polar plate and the shading layer 311 are arranged on the same layer and are made of the same material; the second sub-plate 312 is arranged in the same layer and of the same material as the source 53 of the drive transistor; the first and second sub-plates 312 are connected by vias penetrating the buffer layer 301, the gate insulating layer 302, and the interlayer insulating layer 303. The via hole includes a via hole penetrating through the buffer layer 301, a via hole penetrating through the gate insulating layer 302, and a via hole penetrating through the interlayer insulating layer 303, and the three via holes are sleeved together.
For example, the material of the gate electrode 52 and the light shielding layer 311 may include a metal material or an alloy material, including molybdenum, aluminum, titanium, and the like. The source electrode 53 and the drain electrode 54 may include a metal material or an alloy material, such as a metal single layer or a multi-layer structure formed of molybdenum, aluminum, titanium, or the like, for example, a multi-metal layer stack, such as a titanium, aluminum, titanium three-layer metal stack, or the like. The material of the semiconductor active layer 51 may include an oxide semiconductor material, such as indium gallium zinc oxide, indium gallium tin oxide, or the like.
Wherein a planarization layer 304 is provided on the side of the drive transistor facing away from the substrate 10. The planarization layer 304 is generally made of an organic material, for example: photoresist, acrylic-based polymers, silicon-based polymers, and the like.
Wherein the light emitting device (organic light emitting diode) includes an anode 401 and a pixel defining layer 306 sequentially formed on the planarization layer 304, it is understood that the light emitting device may further include a light emitting layer 402 and a cathode 403.
The anode 401 of the light emitting device may be electrically connected to the source 53 of the driving transistor through a via penetrating through the planarization layer 304, and the anode 401 may be made of materials such as Indium Tin Oxide (ITO), indium Zinc Oxide (IZO), zinc oxide (ZnO), etc.; the pixel defining layer 306 may cover the planarization layer 304, and the pixel defining layer 306 may be made of an organic material, for example: organic materials such as photoresist, and the pixel defining layer 306 may have a receiving portion exposing the anode 401; a light emitting layer 402 is disposed in the receiving portion and formed on the anode 401, the light emitting layer 402 may include a small molecular organic material or a polymer molecular organic material, may be a fluorescent light emitting material or a phosphorescent light emitting material, may emit red light, green light, blue light, or may emit white light, etc.; also, in some embodiments, the light emitting layer 402 belongs to the organic functional layer in the above embodiments, and the organic functional layer may further include an electron injection layer, an electron transport layer, a hole injection layer, a hole transport layer, an electron blocking layer, a hole transport layer, and the like; the cathode 403 covers the light emitting layer 402, and the cathode 403 may be made of a metal material such as lithium (Li), aluminum (Al), magnesium (Mg), or silver (Ag).
It should be noted that, the anode 401, the light emitting layer 402, and the cathode 403 form an organic light emitting diode, and the display substrate includes organic light emitting diodes arranged in an array. In addition, it should be noted that, anodes 401 of the organic light emitting diodes are independent from each other, and cathodes 403 of the organic light emitting diodes may be connected over the whole surface; that is, the cathode 403 has a whole surface structure provided on the display substrate, and is a common electrode of a plurality of organic light emitting diodes.
Fig. 5 is a cross-sectional view of another driving transistor and a light emitting device according to an embodiment of the present invention. As shown in fig. 5, in some embodiments, the anode 401 of the light emitting device may be further electrically connected to the source 53 of the driving transistor through the switching electrode 501. And, when the anode 401 is electrically connected to the driving transistor through the switching electrode 501, a Passivation (PVX) layer 305 may be further formed between the planarization layer 304 and the layers of the source 53 and the drain 54 of the driving transistor, and the passivation layer 305 may be formed of a material such as silicon oxide, silicon nitride or silicon oxynitride; the passivation layer 305 covers the source 53 and drain 54; the landing electrode 501 is formed between the planarization layer 304 and the passivation layer 305, and is electrically connected to the source 53 of the driving transistor through a via hole (e.g., a metal via hole) on the passivation layer 305; the anode 401 of the light emitting device may be electrically connected to the switching electrode 501 through a via hole (e.g., a metal via hole) on the planarization layer 304, so as to complete the connection between the anode 401 of the light emitting device and the source 53 of the driving transistor.
Of course, as described in other embodiments, a structure such as an encapsulation layer may be further included on the light emitting device, where the encapsulation layer includes a first encapsulation layer, a second encapsulation layer, and a third encapsulation layer that are sequentially stacked. The first packaging layer and the third packaging layer are used for preventing water and oxygen from entering the light-emitting layer; the first packaging layer and the third packaging layer can be made of inorganic materials such as silicon nitride, silicon oxide and the like. The second packaging layer is used for realizing planarization effect so as to facilitate the manufacture of the third packaging film layer, and can be manufactured by adopting materials such as acrylic acid-based polymer, silicon-based polymer and the like.
In some embodiments, the light emitting device includes a plurality of light emitting layers corresponding to the organic light emitting diode having a plurality of colors, the dimming layer is disposed opposite to at least part of the plurality of light emitting layers, the dimming layer includes a plurality of sub-dimming layers, one sub-dimming layer corresponds to each light emitting layer, and the increasing and decreasing trend of the transmittance of one sub-dimming layer along with the temperature change is opposite to the increasing and decreasing trend of the light emitting efficiency of the corresponding light emitting layer along with the temperature change.
Fig. 6 is a schematic structural diagram of another display substrate according to an embodiment of the disclosure. In particular, the structure is an alternative embodiment based on one embodiment of the structure shown in fig. 1 and 3; as shown in fig. 6, the light emitting device includes a red light emitting layer 601, a green light emitting layer 602, and a blue light emitting layer 603, unlike the structure shown in fig. 3; in some embodiments, the dimming layer includes at least one of a red sub-dimming layer 701, a green sub-dimming layer 702, and a blue sub-dimming layer 703, and the red sub-dimming layer 701, the green sub-dimming layer 702, and the blue sub-dimming layer 703 are respectively in one-to-one correspondence with the red light emitting layer 601, the green light emitting layer 602, and the blue light emitting layer 603, and illustratively, one embodiment including the red sub-dimming layer 701, the green sub-dimming layer 702, and the blue sub-dimming layer 703 is shown, and it is understood that the dimming layer may further include only one of the red sub-dimming layer 701, the green sub-dimming layer 702, and the blue sub-dimming layer 703, or may include any two of the red sub-dimming layer 701, the green sub-dimming layer 702, and the blue sub-dimming layer 703. It should be noted that, the arrangement of the encapsulation layer 4, the light extraction layer 3 and the corresponding organic functional layers in fig. 6 is only one embodiment of the combination scheme corresponding to the structure shown in fig. 3, which does not limit the technical scheme of the embodiment of the disclosure.
In some embodiments, the dimming layer comprises a green sub-dimming layer and/or a blue sub-dimming layer, i.e. the dimming layer is not provided with a red sub-dimming layer; the transmittance of the green sub-dimming layer increases with the increase of temperature, and the transmittance of the blue sub-dimming layer decreases with the increase of temperature.
Fig. 7 is a schematic diagram of wavelength-transmittance corresponding to a sub-dimming layer according to an embodiment of the present disclosure. As shown in fig. 7, the dotted line corresponds to a relationship curve after the transmittance increases, the dotted line corresponds to a relationship curve after the transmittance decreases, and the solid line corresponds to a reference transmittance at normal temperature, specifically, a wavelength-transmittance relationship corresponding to one blue sub-dimming layer shown in (a) and a wavelength-transmittance relationship corresponding to one green sub-dimming layer shown in (b).
In some embodiments, the dimming layer comprises a filter material whose dimming parameter increases and decreases with temperature, the dimming parameter comprising one of refractive index and light absorption coefficient; the filter material corresponding to the green sub-dimming layer is made of a liquid crystal polymer material or a silicon dioxide (SiO 2) material; the light filtering material corresponding to the blue sub-dimming layer is made of vanadium dioxide (VO 2) material; that is, the types of the optical filters used for the respective sub-dimming layers of the dimming layer may be different, and specifically determined according to the characteristics of the corresponding light-emitting layer that increase or decrease with temperature.
The vanadium dioxide material is used as a transition metal oxide, can generate semiconductor-metal phase transition according to the change of the external temperature, the light absorption coefficient of the vanadium dioxide material is gradually increased above the phase transition temperature, and the vanadium dioxide material has high transmittance below the phase transition temperature, and in addition, in some embodiments, the phase transition temperature corresponding to the vanadium dioxide material can be effectively regulated by doping high-valence ions such as Nb5+, mo6+, W6+ or Ta5+ and the like in the vanadium dioxide material; the vanadium dioxide material film is deposited on the blue pixel (corresponding position of the blue light-emitting device) or uniformly doped on the blue pixel in the light-filtering material, so that the light-emitting efficiency of the blue pixel can be reduced at high temperature, and the phenomenon of blue deviation in the use process of the display screen is effectively avoided.
The transmittance of the liquid crystal polymer material, such as ITO/SiO2 core-shell structure doped smectic phase liquid crystal polymer material, is increased along with the increase of temperature at a certain temperature, and the liquid crystal polymer material is covered on the green pixel, so that the luminous efficiency of the green pixel at a high temperature is improved; in addition, certain perovskite materials, such as CsPbBrxI-x, also have thermochromic phenomena, and are not described in detail herein.
The temperature has obvious influence on the refractive index of the silicon dioxide material, the refractive index of the silicon dioxide material is obviously increased along with the increase of the temperature, and the material is colorless and transparent and has extremely high transmittance. Therefore, by depositing a layer of silicon dioxide material on the green pixel or uniformly doping the silicon dioxide material in the light-transmitting material and coating the silicon dioxide material on the green pixel, the refractive index of the light-emitting side of the green pixel can be improved along with the increase of temperature, and the luminous efficiency of the device can be improved.
In some embodiments, the light transmittance of the dimming layer increases or decreases in the range of 3% to 10% of its reference light transmittance; the thickness of the dimming layer ranges from 1 micron to 10 microns.
The embodiment of the disclosure also provides a display device including the display substrate according to any one of the above embodiments.
Example embodiments have been disclosed herein, and although specific terms are employed, they are used and should be interpreted in a generic and descriptive sense only and not for purpose of limitation. In some instances, it will be apparent to one skilled in the art that features, characteristics, and/or elements described in connection with a particular embodiment may be used alone or in combination with other embodiments unless explicitly stated otherwise. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the scope of the disclosure as set forth in the appended claims.
Claims (7)
1. A display substrate, comprising: a substrate, and a light emitting device disposed on the substrate;
wherein, the display substrate further includes: a dimming layer arranged on the light emitting side of the light emitting device;
the transmittance of the dimming layer increases and decreases with temperature change, which is opposite to the luminous efficiency of the light emitting device;
The display substrate further includes: an encapsulation layer; the light emitting device includes a cathode, an anode, and an organic functional layer disposed between the cathode and the anode; the packaging layer is positioned on one side of the cathode, which is away from the substrate, and the dimming layer is positioned on one side of the packaging layer, which is away from the substrate; the organic functional layer includes: the electron injection layer, the electron transport layer, the hole blocking layer, the light emitting layer, the electron blocking layer, the hole transport layer and the hole injection layer are sequentially stacked;
the display substrate further includes: a light extraction layer located between the encapsulation layer and the cathode.
2. The display substrate according to claim 1, wherein,
The light-emitting device comprises a plurality of light-emitting layers, the light-adjusting layers are arranged opposite to at least part of the light-emitting layers, each light-adjusting layer comprises a plurality of sub light-adjusting layers, one sub light-adjusting layer corresponds to one light-emitting layer, and the increasing and decreasing trend of the transmittance of one sub light-adjusting layer along with the change of temperature is opposite to the increasing and decreasing trend of the light-emitting efficiency of the corresponding light-emitting layer along with the change of temperature.
3. The display substrate according to claim 2, wherein,
The light emitting device includes a red light emitting layer, a green light emitting layer, and a blue light emitting layer, and the dimming layer includes at least one of a corresponding red sub-dimming layer, green sub-dimming layer, and blue sub-dimming layer.
4. The display substrate according to claim 3, wherein,
The dimming layer comprises the green sub-dimming layer and/or the blue sub-dimming layer, the transmittance of the green sub-dimming layer increases with the increase of temperature, and the transmittance of the blue sub-dimming layer decreases with the increase of temperature.
5. The display substrate of claim 4, wherein the dimming layer comprises a filter material whose dimming parameter increases and decreases with temperature, the dimming parameter comprising one of refractive index and light absorption coefficient;
The filter material corresponding to the green sub-dimming layer is made of a liquid crystal polymer material or a silicon dioxide material;
and the light filtering material corresponding to the blue sub-dimming layer is made of vanadium dioxide material.
6. The display substrate according to claim 1, wherein,
The light transmittance of the dimming layer increases or decreases in a range of 3% to 10% of the reference light transmittance thereof; the thickness interval of the dimming layer is 1-10 microns.
7. A display device, comprising: the display substrate according to any one of claims 1 to 6.
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