CN113571558B - Display backboard and display terminal - Google Patents

Abstract

The application provides a display backboard and a display terminal; the display backboard comprises a substrate, a light emitting device and a light reflecting layer, wherein the light emitting device and the light reflecting layer are arranged on the substrate, the light reflecting layer is positioned between the light emitting device and the substrate, and orthographic projection of the light emitting device on the light reflecting layer is positioned in the light reflecting layer; according to the light-emitting device, the light reflection layer is arranged on the display backboard, and the light reflection layer is arranged between the light-emitting device and the substrate, so that light emitted from the bottom of the light-emitting device backwards is reflected back to the front through the light reflection layer, and the technical problem of back light leakage of the display backboard is solved.

Description

Display backboard and display terminal

Technical Field

The application relates to the technical field of transparent display, in particular to a display backboard and a display terminal.

Background

When the transparent display works, a user can not only see the content displayed on the panel, but also see the object behind the panel through the panel. The current transparent display implementation modes can be mainly divided into two types: active light emitting type transparent displays such as OLED/LED and passive light emitting type transparent displays such as LCD.

For an active light-emitting type transparent display, because the screen has higher transmittance, the OLED/LED pixels have side emission and bottom emission phenomena when emitting light, namely the light emitting angle is larger than 180 degrees, and part of light is emitted to the back of the screen, so that the back light leakage phenomenon is caused, and the display effect is seriously influenced.

Disclosure of Invention

The application provides a display backboard and a display terminal, which are used for improving the technical problem of serious back light leakage phenomenon of an active light-emitting type transparent display.

In order to solve the technical problems, the technical scheme provided by the application is as follows:

the application provides a display backboard, which comprises a substrate, a light emitting device and a light reflecting layer, wherein the light emitting device and the light reflecting layer are arranged on the substrate, and the light reflecting layer is positioned between the light emitting device and the substrate;

wherein, the orthographic projection of the light emitting device on the light reflecting layer is positioned in the light reflecting layer.

In the display backboard of the application, the display backboard further comprises an array driving layer positioned between the substrate and the light emitting device, and the light reflecting layer and at least one metal layer in the array driving layer are arranged in the same layer.

In the display backboard of the application, the light reflection layer comprises a plurality of light reflection sheets, and the light reflection sheets are arranged in an array;

the light reflecting sheets are in one-to-one correspondence with the light emitting devices, and orthographic projections of the light emitting devices on the light reflecting sheets are positioned in the light reflecting sheets.

In the display backboard, the array driving layer comprises a shading layer positioned on the substrate, a grid layer positioned on the shading layer, an active layer positioned on the grid layer and a source drain electrode layer;

wherein the light reflection layer is arranged on the same layer as at least one of the light shielding layer, the active layer and the gate layer.

In the display backboard of the application, the array driving layer further comprises a plurality of thin film transistors and a plurality of storage capacitors, and the light emitting device is electrically connected with the storage capacitors through the thin film transistors;

the light reflecting layer and the shading layer are arranged on the same layer, and orthographic projections of the thin film transistor and the storage capacitor on the light reflecting layer and the shading layer are positioned in the light reflecting layer and the shading layer.

In the display backboard of the application, the storage capacitor at least comprises a first electrode layer, a second electrode layer and a third electrode layer, wherein the first electrode layer and the shading layer are arranged on the same layer, the second electrode layer and the grid layer are arranged on the same layer, and the third electrode layer and the source drain electrode layer are arranged on the same layer.

In the display back plate of the application, the light reflection layer, the shading layer and the first electrode layer are integrally formed, and the light reflection layer and the source drain electrode layer are arranged in an insulating mode.

In the display backboard, the array driving layer further comprises a dielectric layer, the first electrode layer and the second electrode layer are both positioned in the dielectric layer, and the third electrode layer is positioned on the surface of the dielectric layer;

the surface of the third electrode layer is further provided with a protective insulating layer, and the protective insulating layer covers the third electrode layer.

In the display backboard, the light-emitting device is provided with a forward pin and a reverse pin, the forward pin is connected with the active layer, and the reverse pin is connected with a low-voltage signal end;

and the forward pin is also provided with an extension section which extends to be connected with the shading layer or the reflecting layer.

The application also provides a display terminal, which comprises a terminal main body and the display backboard, wherein the terminal main body and the display backboard are combined into a whole.

The beneficial effects are that: according to the light-emitting device, the light reflection layer is arranged on the display backboard, and the light reflection layer is arranged between the light-emitting device and the substrate, so that light emitted from the bottom of the light-emitting device backwards is reflected back to the front through the light reflection layer, and the back light leakage phenomenon of the display backboard is reduced or avoided. And the light reflection layer can reflect part of side light emitted by the light-emitting device back to the front surface, so that the brightness of the transparent display is increased, and the display quality is higher.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly introduced below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

FIG. 1 is a schematic view of a first layer structure of a display back plate according to the present application;

FIG. 2 is a pixel plane configuration diagram of a display backplane according to the present application;

fig. 3 is a schematic view of a second layer structure of the display back plate described in the present application.

Reference numerals illustrate:

the display back-plate 100, the substrate 110, the light emitting device 120, the first light emitting device 121, the second light emitting device 122, the third light emitting device 123, the forward lead 124, the extension 1241, the reverse lead 125, the light reflecting layer 130, the first reflecting sheet 131, the second reflecting sheet 132, the third reflecting sheet 133, the array driving layer 140, the thin film transistor 141, the active layer 1411, the gate insulating layer 1412, the gate layer 1413, the source electrode 1414, the drain electrode 1415, the buffer layer 142, the light shielding layer 143, the dielectric layer 144, the storage capacitor 145, the first electrode layer 1451, the second electrode layer 1452, the third electrode layer 1453, and the protective insulating layer 150.

Detailed Description

The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.

With the continuous development of display devices, various new display technologies are continuously developed, and transparent displays are attracting attention due to their wide application prospects. When the transparent display device works, a user can not only watch the content displayed on the panel, but also watch the object behind the panel through the panel. The transparent display can be used as a terminal for public information display by integrating technologies such as multi-touch, intelligent display and the like, is used in various fields such as department store display windows, refrigerator doors, bus stations, front windshield glass of automobiles, automatic vending machines and the like, has synergistic effects such as display, interaction and advertisement, and enables consumers to enjoy convenience brought by technological innovation.

The current transparent display implementation modes can be mainly divided into two types: transparent displays of active light emission type such as OLED/LED and transparent displays of passive light emission type such as LCD. The active light-emitting type transparent display has become a main technical route of transparent display due to factors such as higher transparency, high display color gamut and the like. Compared with a common OLED/LED non-transparent display, the OLED/LED pixel has the technical problems that the phenomenon of side emission and bottom emission exists when the OLED/LED pixel emits light due to higher transmittance of the screen, namely the light emitting angle is larger than 180 degrees, and part of light is emitted to the back of the screen, so that the phenomenon of back light leakage is caused, and serious abnormal display is caused. The present application proposes the following scheme based on the above technical problems.

The embodiment of the application provides a display backboard and a display terminal. The following will describe in detail. The following description of the embodiments is not intended to limit the preferred embodiments.

Referring to fig. 1 to 3, the present embodiment provides a display back plate, which includes a substrate 110, a light emitting device 120 and a light reflecting layer 130 disposed on the substrate 110, wherein the substrate 110 may be made of glass, quartz or polyimide. The light emitting device 120 may be an LED chip, a mini LED chip, a micro LED chip, an OLED light emitting device, etc., and the light reflecting layer 130 may be a metal layer having high reflectivity such as Cu, au, mo, al, etc. The light reflecting layer 130 is located between the light emitting device 120 and the substrate 110, where the orthographic projection of the light emitting device 120 on the light reflecting layer 130 is located in the light reflecting layer 130, so that the light reflecting layer 130 reflects the back light emitted by the light emitting device 120 to the front more fully, and the reflective dead zone is reduced.

In the embodiment of the present application, the light reflection layer 130 is disposed on the display back plate 100, and the light reflection layer 130 is located between the light emitting device 120 and the substrate 110, so that the light reflection layer 130 can reflect the back light emitted by the light emitting device and the side light emitted by the light emitting device to the front, thereby reducing the back light leakage phenomenon of the display back plate 100. Meanwhile, due to the reflection effect of the light reflecting layer 130, more light is reflected to the front surface, which is beneficial to improving the display brightness of the transparent display and further improving the effect.

The technical solutions of the present application will now be described with reference to specific embodiments.

In the display back plate of the present application, referring to fig. 1, fig. 1 is a schematic view of a first layer structure of the display back plate 100, the display back plate 100 further includes an array driving layer 140 located between the substrate 110 and the light emitting device 120, the array driving layer 140 includes a plurality of thin film transistors 141 (TFTs), and the thin film transistors 141 may be amorphous silicon (a-Si) TFTs, low Temperature Polysilicon (LTPS) TFTs, or Metal Oxide (Metal Oxide) TFTs, and in this embodiment, the thin film transistors 141 are IGZO (Indium Gallium Zinc Oxide ) TFTs, which are one of Metal Oxide TFTs. In this embodiment, the light reflecting layer 130 and at least one metal layer in the array driving layer 140 are arranged in the same layer, so that the light reflecting layer 130 made of metal material can be reused as a conductive layer or an electrode layer, thereby reducing the arrangement of other conductive layers or electrode layers in the array driving layer 140 and reducing the difficulty and cost of the manufacturing process.

In the display back plate of the present application, referring to fig. 2, fig. 2 is a schematic diagram of a pixel plane of the display back plate 100, the light reflecting layer 130 includes a plurality of light reflecting sheets, and the light reflecting sheets may be polygonal, circular, elliptical, or other irregular shapes, and the shape and size of the light reflecting sheets are not limited in this application. In this embodiment, taking the light reflecting sheet as an example, a plurality of light reflecting sheets are arranged in an array, and the light reflecting sheets are in one-to-one correspondence with the light emitting devices 120, and the orthographic projection of the light emitting devices 120 on the light reflecting sheet is located in the light reflecting sheet. In this embodiment, by arranging the light reflecting layer 130 as a plurality of light reflecting sheets, the metal layer is prevented from being disposed on the entire surface of the substrate 110, so that the material cost of the light reflecting layer 130 is reduced, the weight of the display back plate 100 is reduced, and a light and thin effect is achieved.

In the display back plate of the present application, the array driving layer 140 further includes a buffer layer 142 disposed on the substrate 110 and a light shielding layer 143 disposed in the buffer layer 142, and the thin film transistor 141 is disposed in the buffer layer 142. The buffer layer 142 may be made of a material such as silicon oxide (SiO) ₂ Or silicon nitride (SiN) _X ) And inorganic insulating materials. The light shielding layer 143 is an opaque film layer made of metal (such as Cu, au, mo, al) or other inorganic or organic materials. The thin film transistor 141 may be of an etch-stop type, a back channel etch type, a bottom gate thin film transistor type, or a top gate thin film transistor type, and the like, which is not particularly limited in this application.

In this embodiment, taking the top gate thin film transistor type as an example, the thin film transistor 141 may include an active layer 1411 on the buffer layer 142, a gate insulating layer 1412 disposed on the active layer 1411, a gate layer 1413 disposed on the gate insulating layer 1412, and a source/drain layer connected to the active layer 1411. The active layer 1411 may be amorphous silicon (a-Si), low temperature polysilicon (Low Temperature Poly-silicon, LTPS), or indium gallium zinc oxide (Indium Gallium Zinc Oxide, IGZO). In this embodiment, the active layer 1411 is made of an indium gallium zinc oxide (Indium Gallium Zinc Oxide, IGZO) material, and accordingly, the gate layer 1413 and the source/drain layer are also made of an indium gallium zinc oxide (Indium Gallium Zinc Oxide, IGZO) material. It should be noted that the gate layer 1413 and the source/drain layer may be formed of one of a transition metal, a post-transition metal, or a polycrystalline non-metal. For example, the gate layer 1413 and the source and drain layers may be made of a metal material such as titanium (Ti), copper (Cu), molybdenum (Mo), tungsten (W), zinc (Zn), aluminum (Al), or a non-metal material such as polysilicon (p-Si), or the like.

In the present embodiment, the light reflecting layer 130 is provided in the same layer as at least one of the light shielding layer 143, the active layer 1411, and the gate layer 1413. For example, as shown in fig. 1, the light reflecting layer 130 is arranged in the same layer as the active layer 1411. In this embodiment, by disposing the light reflecting layer 130 and at least one of the light shielding layer 143, the active layer 1411 or the gate layer 1413 in the same layer, it is able to avoid designing a metal layer process for the light reflecting layer 130 separately, and reduce the process difficulty and cost.

In the display back plate of the present application, referring to fig. 3, fig. 3 is a schematic view of a second layer structure of the display back plate 100, the array driving layer 140 further includes a dielectric layer 144 and a plurality of storage capacitors 145 disposed in the dielectric layer 144 and on the dielectric layer 144, the dielectric layer 144 is disposed on the buffer layer 142, and the thin film transistor 141 is disposed in the dielectric layer 144. The dielectric layer 144 may be made of a material having a relatively high dielectric constant, such as epoxy. In this embodiment, the light emitting device 120 is electrically connected to the storage capacitor 145 through the thin film transistor 141. Specifically, the light emitting device 120 is connected to the drain 1415 of the thin film transistor 141, and the storage capacitor 145 is connected to the source 1414 of the thin film transistor 141. In this embodiment, a plurality of storage capacitors 145 are disposed in the dielectric layer 144 or on the dielectric layer 144, so that the charged voltage on the pixel electrode can be kept until the next picture update, thereby improving the picture continuity when refreshing the picture and improving the display effect.

In this embodiment, the light-reflecting layer 130 and the light-shielding layer 143 are disposed on the same layer, and in order to reduce the complexity of the process, the light-reflecting layer 130 and the light-shielding layer 143 may be the same metal layer, i.e. the light-shielding layer 143 is multiplexed into the light-reflecting layer 130, and the light-shielding and light-reflecting functions are simultaneously achieved.

In this embodiment, orthographic projections of the thin film transistor 141 and the storage capacitor 145 on the light reflecting layer 130 and the light shielding layer 143 are located in the light reflecting layer 130 and the light shielding layer 143. By the arrangement, the light emitted to the back positions of the thin film transistor 141 and the storage capacitor 145 can be reflected to the front surface by the light reflecting layer 130, so that the light loss rate of the light at the positions of the thin film transistor 141 and the storage capacitor 145 is reduced, and the display brightness is further improved.

In the display back plate of the present application, referring to fig. 3, the storage capacitor 145 at least includes a first electrode layer 1451, a second electrode layer 1452 and a third electrode layer 1453, wherein the first electrode layer 1451 is disposed in the same layer as the light shielding layer 143, the second electrode layer 1452 is disposed in the same layer as the gate layer 1413, and the third electrode layer 1453 is disposed in the same layer as the source/drain layer. In this embodiment, the source 1414 and the drain 1415 of the source-drain layer are located on the surface of the dielectric layer 144, and the source 1414 and the drain 1415 are electrically connected to the active layer 1411 through vias provided in the dielectric layer 144, that is, the third electrode layer 1453 is located on the surface of the dielectric layer 144, and the first electrode layer 1451 and the second electrode layer 1452 are located in the dielectric layer 144. In order to further simplify the process of the storage capacitor 145, in this embodiment, the light shielding layer 143 may be multiplexed as the first electrode layer 1451 of the storage capacitor 145, the gate layer 1413 may be multiplexed as the second electrode layer 1452 of the storage capacitor 145, and the source/drain layer may be multiplexed as the third electrode layer 1453 of the storage capacitor 145.

In this embodiment, the third electrode layer 1453, i.e. the surface of the source/drain layer, is further provided with a protective insulating layer 150 for insulation protectionThe protective insulating layer 150 covers the third electrode layer 1453, and the protective insulating layer 150 may be made of, for example, silicon oxide (SiO ₂ ) Or silicon nitride (SiN) _X ) And inorganic insulating materials.

In this embodiment, the storage capacitor 145 is configured to have a multi-layer structure including at least the first electrode layer 1451, the second electrode layer 1452, and the third electrode layer 1453, so that the storage capacitor 145 can be formed as a parallel body of a plurality of plate capacitors, and a larger capacitance can be obtained with a smaller volume, so that the storage capacitor 145 can store more electricity and has a higher storage capacity. In addition, the light shielding layer 143 is multiplexed as the first electrode layer 1451 of the storage capacitor 145, so that the light shielding layer 143 can be multiplexed as not only the light reflecting layer 130 but also the capacitor electrode, and the gate layer 1413 is multiplexed as the capacitor electrode, which is beneficial to simplifying the manufacturing process and the internal structure of the display back plate 100, and reducing the manufacturing cost.

In the display back-plate of the present application, referring to fig. 2, the display back-plate 100 at least includes a first light-emitting device 121, a second light-emitting device 122 and a third light-emitting device 123 with different light-emitting colors, and the light-emitting devices 120 with multiple colors can make the light source of the display back-plate 100 have higher gray scale and higher contrast of color. In the present embodiment, the light reflection layer 130 includes a first reflection sheet 131 corresponding to the first light emitting device 121, a second reflection sheet 132 corresponding to the second light emitting device 122, and a third reflection sheet 133 corresponding to the third light emitting device 123.

In the present embodiment, the light reflection areas of the first, second and third reflection sheets 131, 132 and 133 may be the same or different. Specifically, when the side light emitting effect of each light emitting device is relatively close, the reflective areas of the first reflective sheet 131, the second reflective sheet 132, and the third reflective sheet 133 are set to be the same, so as to reduce the difficulty of the manufacturing process and the manufacturing cost; when the difference of the side light-emitting effects of each light-emitting device is larger, the reflective areas of the first reflective sheet 131, the second reflective sheet 132 and the third reflective sheet 133 can be adjusted according to the different side light-emitting effect intensities, at this time, the reflective areas are different, the reflective areas are related to the side light-emitting effect intensities of the light-emitting devices, the stronger the side light-emitting effect is, the larger the emitting area of the reflective sheet is, so that the problem of more back light leakage caused when the side light-emitting effect of each light-emitting device is larger is solved.

In the display back plate of the present application, the first light emitting device 121 is a red light chip, the second light emitting device 122 is a green light chip, and the third light emitting device 123 is a blue light chip, so that the first light emitting device 121, the second light emitting device 122 and the third light emitting device 123 can emit three primary colors (red, green and blue) and perform color mixing to obtain various colors required for display.

In the display back plate of the present application, the light emitting device 120 is provided with a forward pin 124 and a reverse pin 125, the forward pin 124 is connected to the drain electrode 1415 and is connected to an operating Voltage (VDD) through the active layer 1411, the reverse pin 125 is connected to a low voltage signal terminal (VSS), and the low voltage signal terminal is connected to a common ground voltage. The forward lead 124 is further provided with an extension section 1241, and the extension section 1241 extends to be connected with the light shielding layer 143 or the reflective layer. In this embodiment, the extension section 1241 extends to connect with the light shielding layer 143 or the reflective layer, which is equivalent to adding a "ground line" with protection function to the light emitting device 120, so as to prevent breakdown of the semiconductor structure in the light emitting device 120 when the current in the light emitting device 120 is too large, and further prolong the service life of the light emitting device 120.

The application further provides a display terminal, which comprises a terminal main body and the display backboard 100, wherein the terminal main body and the display backboard 100 are combined into a whole.

The light reflection layer 130 is arranged on the display backboard 100, and the light reflection layer 130 is positioned between the light emitting device 120 and the substrate 110, so that light emitted from the bottom of the light emitting device 120 to the rear is reflected back to the front through the light reflection layer 130, and the back light leakage phenomenon of the display backboard 100 is reduced or avoided. Furthermore, the light reflection layer 130 may reflect part of the side light emitted from the light emitting device 120 back to the front surface, thereby increasing the brightness of the transparent display. In addition, the light shielding layer 143 is multiplexed into the light reflecting layer 130 and the first electrode layer 1451 of the storage capacitor 145, and the gate layer 1413 of the thin film transistor 141 is multiplexed into the second electrode layer 1452 of the storage capacitor 145, which is beneficial to simplifying the manufacturing process and the internal structure of the display back plate 100 and reducing the manufacturing cost.

The foregoing has described in detail a display back panel and a display terminal provided by embodiments of the present application, and specific examples have been applied herein to illustrate the principles and embodiments of the present application, where the foregoing examples are only for aiding in understanding the method and core ideas of the present application; meanwhile, those skilled in the art will have variations in the specific embodiments and application scope in light of the ideas of the present application, and the present description should not be construed as limiting the present application in view of the above.

Claims (7)

1. The display backboard is characterized by comprising a substrate, a light emitting device and a light reflecting layer, wherein the light emitting device and the light reflecting layer are arranged on the substrate, and the light reflecting layer is positioned between the light emitting device and the substrate;

wherein the orthographic projection of the light emitting device on the light reflecting layer is positioned in the light reflecting layer;

the display backboard further comprises an array driving layer positioned between the substrate and the light emitting device, the array driving layer comprises a shading layer positioned on the substrate, a plurality of thin film transistors and a plurality of storage capacitors, the thin film transistors comprise a grid layer positioned on the shading layer, an active layer positioned on the grid layer and a source drain layer, and the light emitting device is electrically connected with the storage capacitors through the thin film transistors;

the light reflecting layer is arranged on the same layer as one of the shading layer, the active layer and the grid layer;

the storage capacitor at least comprises a first electrode layer, a second electrode layer and a third electrode layer, wherein the first electrode layer and the shading layer are arranged on the same layer, the second electrode layer and the grid layer are arranged on the same layer, and the third electrode layer and the source drain electrode layer are arranged on the same layer.

2. The display back plate of claim 1, wherein the light reflection layer comprises a plurality of light reflection sheets, the plurality of light reflection sheets being arranged in an array;

the light reflecting sheets are in one-to-one correspondence with the light emitting devices, and orthographic projections of the light emitting devices on the light reflecting sheets are positioned in the light reflecting sheets.

3. The display back plate according to claim 2, wherein the light reflecting layer and the light shielding layer are arranged in the same layer, and orthographic projections of the thin film transistor and the storage capacitor on the light reflecting layer and the light shielding layer are positioned in the light reflecting layer and the light shielding layer.

4. The display back plate according to claim 3, wherein the light reflection layer is integrally formed with the light shielding layer and the first electrode layer, and the light reflection layer is provided to be insulated from the source-drain layer.

5. The display backplane of claim 3, wherein the array driver layer further comprises a dielectric layer, the first electrode layer and the second electrode layer are both positioned in the dielectric layer, and the third electrode layer is positioned on the surface of the dielectric layer;

the surface of the third electrode layer is further provided with a protective insulating layer, and the protective insulating layer covers the third electrode layer.

6. The display back plate according to claim 1, wherein the light emitting device is provided with a forward pin and a reverse pin, the forward pin is connected with the active layer, and the reverse pin is connected with a low voltage signal terminal;

and the forward pin is also provided with an extension section which extends to be connected with the shading layer or the reflecting layer.

7. A display terminal comprising a terminal body and the display back plate according to any one of claims 1 to 6, the terminal body and the display back plate being combined as one body.

Images