CN113568455B - Control method and device for temperature of refrigeration TOSA - Google Patents
Control method and device for temperature of refrigeration TOSA Download PDFInfo
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- CN113568455B CN113568455B CN202110866869.4A CN202110866869A CN113568455B CN 113568455 B CN113568455 B CN 113568455B CN 202110866869 A CN202110866869 A CN 202110866869A CN 113568455 B CN113568455 B CN 113568455B
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- G05D23/24—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature the sensing element having a resistance varying with temperature, e.g. a thermistor
Abstract
The invention relates to the technical field of optical communication, and provides a control method and device for refrigerating TOSA temperature. The microprocessor continuously detects the working voltage and/or the driving current of the laser; calculating the difference between the junction temperature of the current laser and the standard working temperature according to the corresponding change relation dVf/dT of the working voltage and the temperature or the change relation dIf/dT of the driving current and the temperature; and controlling the TEC to perform refrigeration and/or heating so that the calculated difference value between the current junction temperature of the laser and the standard working temperature is smaller than a first preset threshold value, and thus the working temperature of the laser is pulled back to the preset standard working temperature. The invention calculates the current tube core temperature by monitoring the current of the laser or the working voltage of the laser, then generates feedback quantity and adjusts the temperature set point of the TEC by a microprocessor.
Description
[ field of technology ]
The invention relates to the technical field of optical communication, in particular to a method and a device for controlling the temperature of a refrigeration TOSA.
[ background Art ]
Along with the rapid expansion of the requirements of 5G forward transmission on a wavelength division multiplexing system, a 12-wavelength division system gradually becomes a main stream application, the interval between adjacent wavelengths is gradually reduced, the wavelength stability is required to be about 1nm, and the corresponding temperature change range is about + -10 ℃. In order to realize stable wavelength in the working temperature range, the refrigerating and packaging optical component adopts TEC to control the temperature in the device, detects the current temperature through a thermistor with temperature sensitivity, feeds back the temperature value to a control loop based on an analog or digital technology, and realizes temperature adjustment by adjusting the current magnitude and direction of the TEC, thereby keeping the temperature of the optical chip stable.
Most of the existing refrigeration TOSAs are provided with internal thermistors, so that the internal wiring space of the TOSAs is tense, the wiring is complex, the number of pins of the tube seat is required to be increased, and therefore the cost is increased, and the yield is reduced.
There is also an open loop TEC control method that does not use a thermistor at present, but needs to accurately calibrate the TEC current values of a plurality of temperature sampling points in the adjustment, measurement and production links, so as to form a lookup table, and the change of temperature is compensated by the lookup table. The second similar method is to detect the current temperature of the PCB and the shell by using a temperature sensing resistor on the single board, then calibrate the difference between the temperature of the single board and the temperature of the die at different temperatures to form a lookup table, and compensate the temperature change by the lookup table. The current temperature control method for the thermistor is saved, time and hardware equipment are consumed in the construction of each lookup table, the production efficiency is reduced, the cost is still difficult to reduce, and the consistency of different batches is poor.
In view of this, overcoming the drawbacks of the prior art is a problem to be solved in the art.
[ invention ]
The invention aims to solve the technical problems that an open loop TEC control method without using a thermistor exists at present, but TEC current values of a plurality of temperature sampling points are required to be accurately calibrated in the adjustment, measurement and production links, a lookup table is formed, and the change of temperature is compensated through the lookup table. The second similar method is to detect the current temperature of the PCB and the shell by using a temperature sensing resistor on the single board, then calibrate the difference between the temperature of the single board and the temperature of the die at different temperatures to form a lookup table, and compensate the temperature change by the lookup table. The current temperature control method for the thermistor is saved, time and hardware equipment are consumed in the construction of each lookup table, the production efficiency is reduced, the cost is still difficult to reduce, and the consistency of different batches is poor.
The invention adopts the following technical scheme:
in a first aspect, the present invention provides a method for controlling a temperature of a TOSA, where after an optical module is powered on, a driving current value and an initial wavelength of a laser operate according to a preset TEC standard temperature, including:
the microprocessor continuously detects the working voltage and/or the driving current of the laser;
calculating the difference between the junction temperature of the current laser and the standard working temperature according to the corresponding change relation dVf/dT of the working voltage and the temperature or the change relation dIf/dT of the driving current and the temperature;
and controlling the TEC to perform refrigeration and/or heating so that the calculated difference value between the current junction temperature of the laser and the standard working temperature is smaller than a first preset threshold value, and thus the working temperature of the laser is pulled back to the preset standard working temperature.
Preferably, the wavelength stability of the laser operation in the method is greater than or equal to 1nm, wherein the junction temperature of the laser is equal to +0.1nm wavelength deviation every 1 ℃ rise.
Preferably, the microprocessor continuously detects the working voltage and/or the driving current of the laser, and specifically includes:
the microprocessor periodically detects the working voltage and/or the driving current of the laser; or alternatively, the process may be performed,
the microprocessor is connected with the output end of a comparator, and two ends of the comparator are respectively connected with a reference voltage and the working voltage; the reference voltage is determined by the microprocessor according to a preset initial working temperature and a change relation dVf/dT of the working voltage and the temperature; once the operating voltage exceeds the reference voltage, the comparator output produces a high level or a low level so that the microprocessor triggers a round of detection of the operating voltage and/or drive current of the laser.
Preferably, in the detection of the operating voltage and/or the driving current of the laser, the method further comprises:
determining that the current laser is in a standby state by a microprocessor to detect the working voltage and/or the driving current of the laser; or alternatively, the process may be performed,
and determining a current optical signal to be transmitted through a microprocessor, selecting a laser in the same coding state according to the coding rule of the optical signal to be transmitted, and detecting the working voltage and/or the driving current of the laser.
Preferably, the selecting a laser in the same coding state to detect the working voltage and/or the driving current of the laser specifically includes:
determining the time required by detection of the working voltage and/or the driving current of a round of laser, wherein a microprocessor selects at least two of a first coding task, a second coding task, … and an N coding task, of which the time required by detection for the laser to finish signal transmission of the corresponding coding task is greater than or equal to the time required by detection, from coding tasks of the microprocessor, respectively detecting the working voltage and/or the driving current of the laser, and finishing the refrigerating and/or heating process of a TEC; wherein, each coding task meets the preset similarity.
Preferably, the working voltage and temperature change relationship dVf/dT or the driving current and temperature change relationship dIf/dT is obtained by:
the relation between the forward voltage Vf of the laser and the junction temperature T is that a fitted curve is obtained through a plurality of measurements; or by calculation through a theoretical formula.
Preferably, the fitted curve is obtained by a plurality of measurements, in particular:
from the Shockley equation of the ideal PN junction, the relationship between the forward voltage Vf and the forward current If, and the junction temperature Tj is:
where Vg0 is the forbidden bandwidth of the material at t=0k; VF1 is t=t1, if=if1, the measured forward voltage drop of the PN junction; q is the absolute value of the electron charge; t is absolute temperature; k is the boltzmann constant.
Preferably, the calculation is performed through a theoretical formula, specifically:
from the Shockley equation, the relationship between Vf and junction temperature Tj can be deduced as:
alpha and beta are constants related to material properties, and the lattice of Nd, nc, na and Nv epitaxial wafers are related to materials; wherein the donor impurity concentration of the n region of the PN junction is Na, and the acceptor impurity concentration of the p region is Nd; e is the electron charge; nc and Nv are the effective state densities in the conduction band and valence band, respectively; k is the boltzmann constant.
Preferably, the TEC is controlled to perform cooling and/or heating so that the calculated difference between the current junction temperature of the laser and the standard working temperature is smaller than a preset threshold, which specifically includes:
judging whether the TEC is controlled to refrigerate or heat according to the currently detected working voltage and/or driving current of the laser;
continuously refrigerating or heating the TEC until the detected working voltage and/or driving current skips the initial value, and controlling the skip distance to be smaller than a second preset threshold value; and after maintaining the first preset time, reversely controlling the TEC until the calculated difference value between the current laser junction temperature and the standard working temperature is smaller than a first preset threshold value.
In a second aspect, the present invention further provides a control device for a refrigeration TOSA temperature, for implementing the control method for a refrigeration TOSA temperature according to the first aspect, where the device includes:
at least one processor; and a memory communicatively coupled to the at least one processor; wherein the memory stores instructions executable by the at least one processor for performing the method of controlling the temperature of a refrigeration TOSA of the first aspect.
In a third aspect, the present invention also provides a non-volatile computer storage medium storing computer executable instructions for execution by one or more processors to perform the method of controlling a refrigeration TOSA temperature of the first aspect.
According to the invention, the current tube core temperature is calculated by monitoring the current of the laser or the working voltage of the laser without adopting thermistor feedback, then the feedback quantity is generated, the temperature setting point of the TEC is regulated by the microprocessor, the temperature stabilization of the refrigerating TOSA is realized by utilizing the TEC control loop, the temperature calibration table is simplified, and the tube seat pin is not required to be newly added, so that the temperature control precision requirement of +/-1-2.5 nm is met, the requirement of 5G forward transmission is met, and the cost is reduced.
[ description of the drawings ]
In order to more clearly illustrate the technical solution of the embodiments of the present invention, the drawings that are required to be used in the embodiments of the present invention will be briefly described below. It is evident that the drawings described below are only some embodiments of the present invention and that other drawings may be obtained from these drawings without inventive effort for a person of ordinary skill in the art.
Fig. 1 is a schematic flow chart of a control method for temperature of a refrigeration TOSA according to an embodiment of the present invention;
FIG. 2 is a schematic diagram showing a microprocessor according to the present invention for calculating the current temperature according to the voltage/current of the laser;
FIG. 3 is a schematic diagram showing a relationship between a laser operating voltage and a junction temperature according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a relationship between forward current and junction temperature of a laser according to an embodiment of the present invention;
FIG. 5 is a schematic flow chart of a control method for temperature of a refrigerating TOSA according to an embodiment of the invention;
fig. 6 is a schematic structural diagram of a control device for controlling the temperature of a refrigeration TOSA according to an embodiment of the present invention.
[ detailed description ] of the invention
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
In a conventional non-refrigeration TOSA, since the light emitting efficiency of a laser changes with temperature, a driving chip or a microprocessor compensates the temperature of bias current under different temperature conditions in a closed loop or open loop mode, so that the stability of light emitting power is maintained; and meanwhile, the change of the wavelength extinction ratio is compensated for by the magnitude of the modulation current.
In a refrigerated TOSA, the TEC can be used to stabilize the operating temperature of the laser, but how to achieve the current temperature is a precondition for temperature control. The operating voltage of the laser is typically about 1.2V, depending on the light emission characteristics of the laser, and varies with junction temperature and current.
Measuring the temperature of the laser inside the TOSA requires that the temperature measurement point be as close to the laser as possible. The temperature detected by the thermistor and the laser are kept as same as possible by good heat conduction of the carrier. Therefore, a method close to the laser as much as possible needs to be found to accurately measure the temperature, the laser is a semiconductor PN junction structure, the internal junction temperature can accurately reflect the real temperature of the laser, and an additional temperature sensing element is not needed to be added. Therefore, the temperature of the laser can be accurately measured by adopting the current and/or the voltage flowing through the PN junction, and meanwhile, the precision requirement of the measured current is further reduced because the wavelength stability required by the 5G forward transmission is required to be within +/-1 nm or +/-2.5 nm, so that a feasibility foundation is provided for the microprocessor to calculate the temperature value through an algorithm.
According to the invention, the corresponding relation between the junction temperature and the working voltage or current is found, and the current laser temperature value can be calculated through the change of the working voltage or current, so that the temperature set point of the TEC is feedback controlled, and the temperature is kept stable.
In addition, the technical features of the embodiments of the present invention described below may be combined with each other as long as they do not collide with each other.
Example 1:
the embodiment 1 of the invention provides a control method for the temperature of a refrigeration TOSA, after an optical module is powered on and started, the drive current value and the initial wavelength of a laser operate according to a preset TEC standard temperature, and in general, the preset TEC standard temperature can be normal temperature, that is, the TEC is in a non-working state, however, for a special working scene, for example, in a cold environment, the corresponding TEC standard temperature can be set to 25 degrees and so on; the driving current value and the initial wavelength of the laser are understood to mean the quiescent operating current of the laser, and the corresponding initial wavelength will behave differently for different laser types, for example, the laser itself has only one operating wavelength, the initial wavelength is provided after the corresponding driving current is provided, and if the laser is a tunable laser, the corresponding initial wavelength will also involve the input of control signals such as modulation voltage. The main method process of the embodiment of the present invention is described below, as shown in fig. 1 and 2, including:
in step 201, the microprocessor continuously detects the operating voltage and/or drive current of the laser.
The duration described herein is generally represented by a certain period of time, and the corresponding period of time can be obtained by comprehensively considering the degree of abundance of the computing resource and the degree of fineness of the temperature control according to the complexity of the environment; the more adequate the computing resources are in general, the shorter the corresponding time period can be set; the lower the complexity of the working environment is, the corresponding time period can be widened; the lower the fine-grained requirement of temperature control, the further the corresponding time period can be relaxed (i.e. the larger the allowable setting).
In step 202, the difference between the current junction temperature of the laser and the standard operating temperature is calculated according to the corresponding relationship between the operating voltage and the temperature dVf/dT or the driving current and the temperature dIf/dT.
In a specific implementation process, the control method of the embodiment of the invention can be completed by taking the relation between the change relation dVf/dT of the working voltage and the temperature or the change relation dIf/dT of the driving current and the temperature, and in an actual implementation process, an implementation mode of jointly calculating the two change relations is not excluded. In step 203, the TEC is controlled to perform cooling and/or heating so that the calculated difference between the current laser junction temperature and the standard operating temperature is smaller than a first preset threshold value, thereby pulling the operating temperature of the laser back to the preset standard operating temperature.
It should be noted that, in the embodiment of the present invention, a corresponding relationship is directly established between the working temperature of the laser and the junction temperature of the laser; according to different application scenes and possible structural characteristics of the lasers, the junction temperature of the corresponding lasers can directly represent the working temperature of the lasers; however, in some cases, there may be a certain temperature difference between the two, and even if the corresponding deviation value is obtained in advance, the switching from the junction temperature of the laser to the working temperature of the laser can be completed by compensating in a specific calculation process.
According to the embodiment of the invention, the temperature of the current tube core is calculated by monitoring the current of the laser or the working voltage of the laser without adopting thermistor feedback, then the feedback quantity is generated, the temperature set point of the TEC is regulated by the microprocessor, the temperature stabilization of the refrigerating TOSA is realized by utilizing the TEC control loop, the temperature calibration table is simplified, and the tube seat pin is not required to be newly added, so that the temperature control precision requirement of +/-1-2.5 nm is met, the requirement of 5G forward transmission is met, and the cost is reduced.
In the implementation process of the embodiment of the invention, in the application scene of the method of the embodiment of the invention, the working wavelength stability of the laser in the method is more than or equal to 1nm, wherein the junction temperature of the laser is increased by 1 ℃ for every wavelength deviation of +0.1nm. The application scenario of the implementation scheme of the present invention is explained, and compared with the scheme of applying the thermistor in the prior art, the object monitored by the thermistor is simpler and more direct, but the implementation scheme of the embodiment of the present invention has the disadvantage that under the condition that the peripheral circuit of the laser is more complex, the corresponding accuracy deviation between the difference between the current junction temperature of the laser and the standard working temperature calculated by the steps 201-202 and the actual situation may be larger to some extent, because of the complexity of the peripheral circuit of the laser, the objective effectiveness of the change relationship between the working voltage and the temperature dVf/dT or the change relationship between the driving current and the temperature dIf/dT obtained by analysis in the step 202 is reduced. Therefore, only if the characteristic limitation most suitable for the application scene of the invention exists, namely the wavelength stability of the laser working is more than or equal to 1nm. However, in many possible embodiments, it is not excluded that the embodiments of the invention are equally applicable to more severe conditions than this, and that the corresponding condition parameters are given here as a preferred reference suggestion.
In connection with the embodiment of the present invention, two alternative implementations are provided for the microprocessor to continuously detect the operating voltage and/or the driving current of the laser, which is completed in step 201.
In a first mode, the microprocessor periodically detects the working voltage and/or the driving current of the laser.
The second mode is that the microprocessor is connected with the output end of a comparator, and the two ends of the comparator are respectively connected with a reference voltage and the working voltage; the reference voltage is determined by the microprocessor according to a preset initial working temperature and a change relation dVf/dT of the working voltage and the temperature; once the operating voltage exceeds the reference voltage, the comparator output produces a high level or a low level so that the microprocessor triggers a round of detection of the operating voltage and/or drive current of the laser.
The first and second modes herein are rather techniques for implementation of the continuous detection described above. In contrast, the first mode is more traditional and commonly used, and the second mode aims at optimizing the resource consumption of the detection process through adding peripheral circuits under the extremely intense scene of computing resources. Moreover, the control process of the second mode is more flexible and changeable, the coverage of the applicable scene is wider, and the adaptation can be carried out by adjusting the corresponding reference voltage from low requirement to high requirement.
In the implementation process of the steps 201 to 203 according to the embodiments of the present invention, the detection of the working voltage and/or the driving current of the laser can be at least divided into the following two aspects according to the difference of the environment and the time node where the detection is performed.
In one aspect, the microprocessor determines that the current laser is in a standby state for detecting the working voltage and/or the driving current of the laser.
And secondly, determining a current optical signal to be transmitted through a microprocessor, selecting a laser in the same coding state according to the coding rule of the optical signal to be transmitted, and detecting the working voltage and/or the driving current of the laser.
The node characteristics of the first aspect and the second aspect are very clear, and the first aspect is to detect the laser in the standby state, and in the embodiment of the present invention, the coverage range of the standby state is wider than that of the standby state in a general understanding sense, for example, the gap for sending the effective optical signal also belongs to the standby state proposed by the present invention; and when no effective command for transmitting the optical signal is received, the state of the device only works under the static voltage is also in the standby state.
Based on the implementation process of the second aspect, a preferred implementation scheme is also provided, and in the implementation scheme, even in the working state of the laser, different junction temperatures may be formed for different working powers and working states, so in order to achieve better detection and temperature control effects, the same or similar working states are selected in the preferred scheme for detection and control. Therefore, the selection of the laser in the same coding state, and the detection of the working voltage and/or the driving current of the laser are specifically:
determining the time required by detection of the working voltage and/or the driving current of a round of laser, wherein a microprocessor selects at least two of a first coding task, a second coding task, … and an N coding task, of which the time required by detection for the laser to finish signal transmission of the corresponding coding task is greater than or equal to the time required by detection, from coding tasks of the microprocessor, respectively detecting the working voltage and/or the driving current of the laser, and finishing the refrigerating and/or heating process of a TEC; wherein, each coding task meets the preset similarity. Wherein the encoding task is represented by a modulated signal emitted by a laser.
The size of N is related according to the number of times of detection, for example, if the scheme needs to average for multiple times of detection, the parameter value of the corresponding N may be selected to be larger. The preset similarity can be adjusted according to practical situations in the specific implementation process, and the similarity which is usually focused can be simply understood as that the number of the signals representing the high level and the number of the signals representing the low level are similar in the corresponding time.
In the specific implementation process, the similarity analysis of the corresponding coding tasks can obtain one or more groups of coding tasks with similarity meeting the conditions, so that the corresponding suitable coding tasks are selected for analysis on different time nodes.
In the above preferred solution, not only the similarity between the encoding tasks is considered, but also the matching between the encoding tasks and the time required for detection is considered, so that the detection process of step 201-step 202 and the verification process after the TEC is controlled in step 203 can be in the same or similar working state, and the corresponding control precision is further improved.
In the embodiment of the invention, the change relation between the working voltage and the temperature dVf/dT or the change relation between the driving current and the temperature dIf/dT is obtained by the following steps: the relation between the forward voltage Vf of the laser and the junction temperature T is that a fitted curve is obtained through a plurality of measurements; or by calculation through a theoretical formula. In embodiment 2 of the present invention, a certain formula will be specifically listed, which is known to those skilled in the art, and the corresponding formula is not the only basis for implementing the foregoing manner, and should not be taken as a reason for limiting the scope of the present invention.
Example 2:
the embodiment of the invention is based on the embodiment 1 and carries out scheme association explanation by combining specific scene related parameters, wherein the invention also relates to specific explanation of the obtaining mode of the change relation dVF/dT of the working voltage and the temperature or the change relation dIf/dT of the driving current and the temperature.
According to the light emitting characteristics of the laser, the working voltage of the laser is typically about 1.2V, and the working voltage is changed along with the change of junction temperature and current, so that the corresponding relation between the junction temperature and the working voltage can be found. The current temperature value can be calculated through the change of the working voltage/current, so that the temperature set point of the TEC is controlled, and the temperature is kept stable.
The relation between the working voltage Vf and the forward current If and the junction temperature Tj can be obtained by using the shackley equation of the ideal PN junction:
where Vg0 is the forbidden bandwidth of the material at t=0k; VF1 is t=t1, if=if1, the measured forward voltage drop of the PN junction; q is the absolute value of the electron charge; t is absolute temperature; k is the boltzmann constant.
It can be demonstrated that at constant current, the PN junctions Vf and If are approximately linear functions with respect to Tj. Thus, the relationship between laser operating voltage and junction temperature can be measured precisely multiple times to obtain a fitted curve.
Assume that: vf=a+b×tj;
given a small current If, the temperature T of the incubator after reaching thermal equilibrium may be approximately equal to Tj, and the values of coefficients a and B may be calculated by testing the values of the sets Tj and Vf.
Given a small current if=10ma, the temperature T of the incubator after reaching thermal equilibrium may be approximately equal to Tj, and the values of the coefficients a and B may be calculated by testing the values of the sets Tj and Vf. For example: from fig. 3, one can derive dVf/dt= -0.76mV/K.
Similarly, assuming tj=e+f If, the temperature can be changed in the incubator, and coefficients E and F are obtained by measuring If and Tj multiple times. For example: dIf/dT=37 ℃/A can be obtained from FIG. 4.
The relationship between the laser operating voltage and the junction temperature can be obtained by calculating a theoretical formula, in addition to a fitted curve obtained by precise multiple measurements, specifically:
from the Shockley equation, the relationship between Vf and junction temperature Tj can be deduced as:
alpha and beta are constants related to material properties, nd, nc, na and the lattice of the epitaxial wafer are related to the material. Wherein the donor impurity concentration of the n region of the PN junction is Na, and the acceptor impurity concentration of the p region is Nd; e is the electron charge; nc and Nv are the effective state densities in the conduction band and valence band, respectively; k is the boltzmann constant.
For example, for a 980nm GaAS laser, α=0.54 meV/K2, β=204K. Nd=5×1017cm -3 ,NA＝1×1018cm -3 . Calculated dVf/dT= -0.89mV/K. That is, the operating voltage Vf varies by-0.89 mV for every degree of temperature change. Therefore, the amount of change in temperature can be estimated from the change in Vf.
In summary, it is possible in principle and in practice to obtain the laser junction temperature by the operating voltage Vf and the forward current If. Because the wavelength stability requirement of the access network laser is not high, for example, the wavelength accuracy requirement of Open-WDM is + -2.5 nm, and even If a large error occurs in Tj through Vf and If calculation, the requirement of the access network can still be met.
The invention provides an algorithm utilizing a microprocessor, which calculates the temperature value of a current laser by detecting the working voltage or current of the laser, and uses the temperature value as temperature feedback of a TEC, then utilizes a control loop of the TEC to keep the temperature of the laser stable, and finally ensures that the wavelength deviation of the laser meets the requirement of an access network.
As shown in fig. 5, after the optical module is powered on and started, the current value and the initial wavelength work according to a preset standard temperature, the optical wavelength changes along with the rising or falling of the external temperature of the optical module, the microprocessor continuously detects the working voltage or current of the laser, calculates the difference between the current temperature and the standard temperature according to the corresponding dVf/dT or dIf/dT coefficient or formula, reversely adjusts the current of the TEC, controls the TEC to refrigerate or heat, and pulls the temperature of the TEC back to the preset standard working temperature, thereby keeping the TEC working around the standard temperature and finally ensuring that the change of the laser wavelength meets the requirement of an index.
Example 3:
fig. 6 is a schematic diagram of an architecture of a control device for controlling a TOSA temperature according to an embodiment of the invention. The control device for the temperature of the refrigeration TOSA of the present embodiment includes one or more processors 21 and a memory 22. In fig. 6, a processor 21 is taken as an example.
The processor 21 and the memory 22 may be connected by a bus or otherwise, for example in fig. 6.
The memory 22 is used as a non-volatile computer readable storage medium for storing a non-volatile software program and a non-volatile computer executable program, such as the control method of the refrigeration TOSA temperature in embodiment 1. The processor 21 executes a control method of the refrigeration TOSA temperature by running non-volatile software programs and instructions stored in the memory 22.
The memory 22 may include high-speed random access memory, and may also include non-volatile memory, such as at least one magnetic disk storage device, flash memory device, or other non-volatile solid-state storage device. In some embodiments, memory 22 may optionally include memory located remotely from processor 21, which may be connected to processor 21 via a network. Examples of such networks include, but are not limited to, the internet, intranets, local area networks, mobile communication networks, and combinations thereof.
The program instructions/modules are stored in the memory 22 and, when executed by the one or more processors 21, perform the method of controlling the temperature of a refrigeration TOSA of embodiment 1 described above, for example, performing the steps shown in fig. 1 described above.
It should be noted that, because the content of information interaction and execution process between modules and units in the above-mentioned device and system is based on the same concept as the processing method embodiment of the present invention, specific content may be referred to the description in the method embodiment of the present invention, and will not be repeated here.
Those of ordinary skill in the art will appreciate that all or a portion of the steps in the various methods of the embodiments may be implemented by a program that instructs associated hardware, the program may be stored on a computer readable storage medium, the storage medium may include: read Only Memory (ROM), random access Memory (RAM, random Access Memory), magnetic or optical disk, and the like.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the invention.
Claims (8)
1. The control method of the refrigerating TOSA temperature is characterized in that after the optical module is powered on and started, the driving current value and the initial wavelength of the laser work according to the preset TEC standard temperature, and the control method comprises the following steps:
the microprocessor continuously detects the working voltage and/or the driving current of the laser;
calculating the difference between the junction temperature of the current laser and the standard working temperature according to the corresponding change relation dVf/dT of the working voltage and the temperature or the change relation dIf/dT of the driving current and the temperature;
controlling the TEC to perform refrigeration and/or heating so that the calculated difference value between the current junction temperature of the laser and the standard working temperature is smaller than a first preset threshold value, and thus the working temperature of the laser is pulled back to the preset standard working temperature;
when the working voltage and/or the driving current of the laser are detected, determining a current optical signal to be sent through a microprocessor, and selecting the laser in the same coding state according to the coding rule of the optical signal to be sent to detect the working voltage and/or the driving current of the laser;
the step of selecting the lasers in the same coding state to detect the working voltage and/or the driving current of the lasers comprises the following steps: determining the time required by detection of the working voltage and/or the driving current of a round of laser, wherein a microprocessor selects at least two of a first coding task, a second coding task, … and an N coding task, which are more than or equal to the time required by detection, from the coding tasks of the microprocessor, and the working voltage and/or the driving current of the laser are detected under the at least two coding tasks, which are more than or equal to the time required by detection, corresponding to the time required by detection, and the TEC is cooled and/or heated; wherein, the preset similarity is satisfied among the encoding tasks; n is a natural number.
2. The method of claim 1, wherein the laser operates with a wavelength stability of 1nm or greater, and wherein the junction temperature of the laser increases by 1 ℃ by a wavelength deviation of +0.1 nm.
3. The method for controlling the temperature of a refrigeration TOSA according to claim 1, wherein the microprocessor continuously detects the operating voltage and/or the driving current of the laser, and specifically comprises:
the microprocessor periodically detects the working voltage and/or the driving current of the laser; or alternatively, the process may be performed,
the microprocessor is connected with the output end of a comparator, and two ends of the comparator are respectively connected with a reference voltage and the working voltage; the reference voltage is determined by the microprocessor according to a preset initial working temperature and a change relation dVf/dT of the working voltage and the temperature; once the operating voltage exceeds the reference voltage, the comparator output produces a high level or a low level so that the microprocessor triggers a round of detection of the operating voltage and/or drive current of the laser.
4. The method for controlling the temperature of a refrigeration TOSA according to claim 1, wherein the variation relationship between the operating voltage and the temperature, dVf/dT, or the variation relationship between the driving current and the temperature, dIf/dT, is obtained by:
the relation between the forward voltage Vf of the laser and the junction temperature T is that a fitted curve is obtained through a plurality of measurements; or by calculation through a theoretical formula.
5. The method for controlling the temperature of a refrigeration TOSA as defined in claim 4, wherein the fitted curve is obtained by a plurality of measurements, in particular:
from the Shockley equation of the ideal PN junction, the relationship between the forward voltage Vf and the forward current If, and the junction temperature Tj is:
where Vg0 is the forbidden bandwidth of the material at t=0k; VF1 is t=t1, if=if1, the measured forward voltage drop of the PN junction; q is the absolute value of the electron charge; t is absolute temperature; k is the boltzmann constant.
6. The method for controlling the temperature of a refrigeration TOSA as defined in claim 4, wherein the temperature is calculated by a theoretical formula, specifically:
from the Shockley equation, the relationship between Vf and junction temperature Tj can be deduced as:
alpha and beta are constants related to material properties, and the lattice of Nd, nc, na and Nv epitaxial wafers are related to materials; wherein the donor impurity concentration of the n region of the PN junction is Na, and the acceptor impurity concentration of the p region is Nd; e is the electron charge; nc and Nv are the effective state densities in the conduction band and valence band, respectively; k is the boltzmann constant.
7. The method for controlling a TOSA temperature according to any one of claims 1 to 6, wherein the TEC is controlled to perform cooling and/or heating so that a difference between a calculated current laser junction temperature and a standard operating temperature is less than a preset threshold, specifically including:
judging whether the TEC is controlled to refrigerate or heat according to the currently detected working voltage and/or driving current of the laser;
continuously refrigerating or heating the TEC until the detected working voltage and/or driving current skips the initial value, and controlling the skip distance to be smaller than a second preset threshold value; and after maintaining the first preset time, reversely controlling the TEC until the calculated difference value between the current laser junction temperature and the standard working temperature is smaller than a first preset threshold value.
8. A control device for refrigerating TOSA temperature, the device comprising:
at least one processor; and a memory communicatively coupled to the at least one processor; wherein the memory stores instructions executable by the at least one processor for performing the method of controlling the temperature of a refrigeration TOSA of any of claims 1-7.
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