CN113566979A - Piezoelectric resonant infrared sensor, array thereof and manufacturing method thereof - Google Patents
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J2005/202—Arrays
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a piezoelectric resonance infrared sensor, an array thereof and a manufacturing method thereof. The piezoelectric resonance infrared sensor includes: the piezoelectric device comprises a substrate, electrodes and a piezoelectric material, wherein a quantum dot film is formed on the upper surface of the piezoelectric material and can accelerate the temperature rise of the piezoelectric material in response to infrared light irradiation. The invention improves the detectivity of the piezoelectric resonance infrared sensor to infrared light, reduces noise and realizes accurate detection of infrared light wavelength.
Description
Technical Field
The invention relates to the technical field of infrared detection, in particular to a piezoelectric resonance infrared sensor, an array thereof and a manufacturing method thereof.
Background
Infrared detection technology has been in great demand for military and civilian use. Infrared detectors are generally classified into photon type detectors and thermal detectors. Photon-type detectors have high signal-to-noise ratios and fast response times, but they require cryogenic cooling systems, and thus they are bulky, expensive, and low power. In contrast, thermal detectors do not require cooling equipment, are generally cheaper, more compact, and more efficient, but have lower resolution and longer response times.
A resonant infrared detector is one of the thermal detectors. Thanks to the development of micro-electromechanical systems (MEMS), nano-electromechanical systems (NEMS) technology, resonant infrared detectors have high sensitivity and low noise. Furthermore, since it uses frequency as an output quantity, it can be monitored with high accuracy and is easy to digitally integrate.
Piezoelectric Bulk Acoustic Wave (BAW) and film acoustic wave (FBAR) resonant sensors utilize a piezoelectric layer to respond to external temperature changes, thereby changing the self resonant frequency and realizing infrared detection. At present, the development obstacles of high-performance piezoelectric resonant infrared sensors are low absorption rate of infrared light and lack of differential absorption of different wavelengths of light.
Disclosure of Invention
According to the piezoelectric resonance infrared sensor, the quantum dot film is formed on the upper surface of the piezoelectric material, so that the absorption rate of infrared light is enhanced, meanwhile, the quantum dot film has excellent photo-thermal conversion performance, the temperature of the quantum dot film rises rapidly, the temperature of the piezoelectric material rises rapidly through heat conduction, the temperature difference is increased, the detection rate of the piezoelectric resonance infrared sensor is improved, and noise is reduced. In addition, the invention also innovatively manufactures the piezoelectric resonance infrared sensor array, and the accurate detection of the infrared wavelength is realized by forming the quantum dot films with different absorption band edges on different piezoelectric resonance infrared sensors.
According to an aspect of the present invention, there is provided a piezoelectric resonant infrared sensor including: the piezoelectric device comprises a substrate, electrodes and a piezoelectric material, wherein a quantum dot film is formed on the upper surface of the piezoelectric material and can accelerate the temperature rise of the piezoelectric material in response to infrared light irradiation.
In one embodiment, the quantum dot material forming the quantum dot thin film includes: tin sulfide, tin selenide, tin telluride, lead sulfide, lead selenide, lead telluride, indium arsenide, indium antimonide, mercury selenide, mercury telluride and alloyed quantum dots thereof, wherein the alloyed quantum dots comprise PbxSn1-xTe、PbxSn1-xSe、InAsxSb1-xAnd HgxCd1-xTe, where x represents the number percentage of ions in each alloyed quantum dot.
In one embodiment, the extent of the absorption band edge of the quantum dot film is adjustable.
In one embodiment, the piezoelectric material is selected from one of quartz, aluminum nitride, lead zirconate titanate piezoelectric ceramic, zinc oxide, and lithium niobate, the electrode is selected from one of titanium, gold, aluminum, platinum, and graphene, and the substrate is a silicon substrate.
According to another aspect of the present invention, there is provided a piezoelectric resonant infrared sensor array comprising a plurality of piezoelectric resonant infrared sensors according to claim 1, wherein the quantum dot thin film of each piezoelectric resonant infrared sensor has a different absorption band edge.
According to still another aspect of the present invention, there is provided a method of manufacturing a piezoelectric resonant infrared sensor, including: a quantum dot thin film is formed on an upper surface of a piezoelectric resonant infrared sensor including a substrate, electrodes, and a piezoelectric material, the quantum dot thin film being capable of accelerating a temperature rise of the piezoelectric material in response to infrared light irradiation.
In one embodiment, the quantum dot material forming the quantum dot thin film includes: tin sulfide, tin selenide, tin telluride, lead sulfide, lead selenide, lead telluride, indium arsenide, indium antimonide, mercury selenide, mercury telluride and alloyed quantum dots thereof, wherein the alloyed quantum dots comprise PbxSn1-xTe、PbxSn1-xSe、InAsxSb1-xAnd HgxCd1-xTe, where x represents the number percentage of ions in each alloyed quantum dot.
In an embodiment, the method further comprises: the range of the absorption band edge of the quantum dot film is adjustable by selecting different quantum dot materials and/or by controlling the synthesis parameters of the quantum dots.
In one embodiment, a method of forming the quantum dot thin film includes: drop coating, spin coating, blade coating, and ink jet printing.
In one embodiment, the piezoelectric material is selected from one of quartz, aluminum nitride, lead zirconate titanate piezoelectric ceramic, zinc oxide, and lithium niobate, the electrode is selected from one of titanium, gold, aluminum, platinum, and graphene, and the substrate is a silicon substrate.
Compared with the prior art, one or more embodiments in the above scheme can have the following advantages or beneficial effects:
the application provides a piezoelectric resonance infrared sensor's piezoelectric material's upper surface is formed with the quantum dot film, and it can make piezoelectric material's temperature rise fast in response to infrared irradiation, has improved piezoelectric resonance infrared sensor's absorptivity to the infrared light to improve piezoelectric resonance infrared sensor's detectivity, reduced the noise. In addition, this application has the quantum dot film that has different absorption band limits and has constructed piezoelectric resonance infrared sensor array through forming on the piezoelectric resonance infrared sensor of difference, has realized the accurate detection to infrared light wavelength.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by the practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention.
Fig. 1 schematically shows the structure of a conventional piezoelectric resonant sensor.
Fig. 2 schematically shows the structure of a piezoresonant infrared sensor according to the invention.
Fig. 3 exemplarily shows the photothermal conversion performance of the lead selenide quantum dots.
Fig. 4 exemplarily shows an absorption spectrum of the lead selenide quantum dot.
Figure 5 shows schematically and exemplarily a piezoresonant infrared sensor array according to the invention.
Detailed Description
The following detailed description of the embodiments of the present invention will be provided with reference to the drawings and examples, so that how to apply the technical means to solve the technical problems and achieve the technical effects can be fully understood and implemented. It should be noted that, as long as there is no conflict, the embodiments and the features of the embodiments of the present invention may be combined with each other, and the technical solutions formed are within the scope of the present invention.
In the following description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the embodiments of the invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without these specific details or with a specific implementation described herein.
Fig. 1 schematically shows the structure of a conventional piezoelectric resonant sensor. As shown in fig. 1, the conventional piezoelectric resonance sensor mainly includes a substrate 101, electrodes 102, and a piezoelectric material 103. For exemplary purposes, the piezoelectric material may be a quartz crystal; the electrode may be a gold electrode; the substrate may be a silicon substrate. The principle of the piezoelectric resonance sensor is that an electrode firstly gives an electric excitation to the piezoelectric quartz, and then the piezoelectric quartz deforms due to the inverse piezoelectric effect, so that an electric signal is converted into sound waves which are transmitted in the vertical plane direction, and finally the sound waves resonate under the extreme sound wave boundary condition. When infrared light irradiates on the quartz, the quartz has a certain absorption effect on the infrared light, so that the temperature of the quartz is changed, and further the resonant frequency is changed. By reading the change of the resonant frequency and reversely deducing the change of the temperature, the detection of the infrared light intensity can be realized.
The absorption rate of quartz to infrared light is very low, only about 20%, so that the generated heat is very little, the temperature change of the quartz itself is very small, and the principle of the piezoelectric resonance sensor is that the temperature difference of the quartz is utilized to read the change of the resonance frequency, so that the temperature difference is small, the frequency change is small, the detection rate of the piezoelectric resonance sensor is very low, and the noise is very large. It is then an alternative to plate the top of the piezoelectric resonator sensor with a material that has a high infrared absorption. The inventor of the application innovatively discovers that partial quantum dot materials have excellent response speed to infrared light, and therefore a novel piezoelectric resonance infrared sensor is designed.
Fig. 2 schematically shows the structure of a piezoresonant infrared sensor according to the invention. As shown in fig. 2, the piezoelectric resonant infrared sensor according to the present invention mainly includes a substrate 201, an electrode 202, a piezoelectric material 203, and a quantum dot thin film 204. A quantum dot thin film 204 is formed on the upper surface of the piezoelectric material 203, which can accelerate the temperature rise of the piezoelectric material 203 in response to irradiation of infrared light.
In particular embodiments, piezoelectric material 203 may be quartz, aluminum nitride, lead zirconate titanate piezoelectric ceramic, zinc oxide, lithium niobate, or the like, electrode 202 may be titanium, gold, aluminum, platinum, graphene, or the like, substrate 201 may be a silicon substrate, or the like. In a specific embodiment, the piezoelectric material 203 may be a temperature sensitive cut-off type y-cut quartz crystal, and the length, width and thickness are 2mm × 1.3mm × 0.035mm by a thinning process.
Based on the selection and design of the quantum dot material for forming the quantum dot thin film 204, the inventors of the present application prepared a series of colloidal quantum dots with different sizes and adjustable absorption wavelengths by a solution thermal injection method. The quantum dots which can be processed by solution have great advantages in coating, including simple operation, mild condition, no damage to device structure, and large-area preparation.
In particular embodiments, the quantum dot material forming the quantum dot thin film 204 may be tin sulfide, tin selenide, tin telluride, lead sulfide, lead selenide, lead telluride, indium arsenide, indium antimonide, mercury selenide, mercury telluride, alloyed quantum dots thereof including Pb, and the likexSn1-xTe、PbxSn1-xSe、InAsxSb1-xAnd HgxCd1-xTe, etc., where x represents the number percentage of ions in each alloyed quantum dot.
In a particular embodiment, the solution of the quantum dot material can be formed into the quantum dot thin film 204 by drop coating, spin coating, doctor blade coating, or ink jet printing, among other methods.
For exemplary purposes, a solution of lead selenide quantum dots (e.g., 10 μ L) can be drop-coated onto a piezoelectric resonant infrared sensor and heated on a hot stage (e.g., 90 ℃) to evaporate the solvent (e.g., 1min) to form a quantum dot thin film. The lead selenide quantum dots and the piezoelectric resonance infrared sensor have excellent thermal stability at 90 ℃, and can not cause the failure of structures/materials.
For exemplary purposes, fig. 3 illustrates the photothermal conversion performance of lead selenide quantum dots. As shown in FIG. 3, the maximum temperature of the prepared lead selenide quantum dot can reach 63 ℃ under 808nm laser irradiation, the temperature rising speed is high, and the average temperature rising speed is greater than 10 ℃/min when the temperature reaches a stable temperature, so that the prepared lead selenide quantum dot has an excellent response speed and excellent photo-thermal conversion performance. Therefore, the quantum dot film is formed on the upper surface of the piezoelectric material, so that the temperature of the piezoelectric material can be quickly raised in response to infrared light irradiation, the absorption rate of the piezoelectric resonance infrared sensor to the infrared light is improved, the detection rate of the piezoelectric resonance infrared sensor is improved, and the noise is reduced.
According to the invention, quantum dots with different sizes can be obtained by selecting different quantum dot materials and/or controlling the synthesis parameters of the quantum dots, so that the range of the absorption band edge of the quantum dot film can be adjusted. The synthesis parameters include reaction temperature and reaction time.
For example, when the quantum dot material forming the quantum dot thin film is lead selenide, the absorption band edge of the quantum dot thin film is adjustable within the range of 1800nm to 2300 nm; when the quantum dot material forming the quantum dot film is lead sulfide, the absorption band edge of the quantum dot film is adjustable within the range of 900nm-1300 nm; when the quantum dot material forming the quantum dot film is tin selenide, the absorption band edge of the quantum dot film is adjustable within the range of 800nm-900 nm. Wherein, the absorption band edge of 1800nm indicates that the light with the incident wavelength less than 1800nm can be absorbed. It can be seen that the detection range of the piezoelectric resonant infrared sensor according to the present invention can cover the near infrared two regions (1000nm-1700nm), even the medium wave infrared (3 μm-5 μm) and the long wave infrared (8 μm-12 μm).
Fig. 4 exemplarily shows an absorption spectrum of the lead selenide quantum dot. The different curves in fig. 4 represent the absorption spectra of the lead selenide quantum dots at different reaction times. As can be seen from fig. 4, the absorption band edge of the lead selenide quantum dots is different and thus tunable as the reaction time changes.
A single piezoelectric resonant infrared sensor can only detect intensity information of infrared light because of the indiscriminate absorption of infrared light by piezoelectric materials. Due to the quantum confinement effect, the absorption band edges of the quantum dots with different sizes are different, namely the response of the quantum dots with different sizes to infrared light is different. Therefore, the quantum dots with different absorption band edges are coated on different piezoelectric resonance infrared sensor units, and the obtained piezoelectric resonance infrared sensor array not only can realize original light intensity detection, but also can realize light wavelength detection.
Accordingly, the present invention proposes a piezoelectric resonant infrared sensor array comprising a plurality of piezoelectric resonant infrared sensors according to the present invention as described above, wherein the quantum dot thin film of each piezoelectric resonant infrared sensor has a different absorption band edge.
For exemplary purposes, a solution of quantum dots having different absorption band edges may be drop coated onto a piezoelectric resonant infrared sensor array and heated on a hot stage, e.g., at 90 ℃, to evaporate the solvent to dryness, forming a piezoelectric resonant infrared sensor array coated with different quantum dot films. Figure 5 shows schematically and exemplarily a piezoresonant infrared sensor array according to the invention. The wavelength values in fig. 5 represent the absorption edge positions of the respective quantum dot films. The size of the piezoelectric resonance infrared sensor array can be regulated according to the specific application requirements, for example, a plane array can be obtained by 1024 × 1024. The distance between each piezoelectric resonance infrared sensor unit in the array can be regulated and controlled according to application requirements, and theoretically, the denser the array is, the higher the resolution is.
The invention also provides a manufacturing method of the piezoelectric resonance infrared sensor, which comprises the following steps: a quantum dot thin film is formed on an upper surface of a piezoelectric resonant infrared sensor including a substrate, electrodes, and a piezoelectric material, the quantum dot thin film being capable of accelerating a temperature rise of the piezoelectric material in response to infrared light irradiation. The specific features of the method have been disclosed previously.
According to the piezoelectric resonance infrared sensor, the quantum dot film is formed on the upper surface of the piezoelectric material, so that the absorption rate of infrared light is enhanced, meanwhile, the quantum dot film has excellent photo-thermal conversion performance, the temperature of the quantum dot film rises rapidly, the temperature of the piezoelectric material rises rapidly through heat conduction, the temperature difference is increased, the detection rate of the piezoelectric resonance infrared sensor is improved, and noise is reduced. In addition, the invention also innovatively manufactures the piezoelectric resonance infrared sensor array, and the accurate detection of the infrared wavelength is realized by forming the quantum dot films with different absorption band edges on different piezoelectric resonance infrared sensors.
It is to be understood that the disclosed embodiments of the invention are not limited to the particular process steps or materials disclosed herein, but rather, are extended to equivalents thereof as would be understood by those of ordinary skill in the relevant art. It is also to be understood that the terminology used herein is for the purpose of describing particular embodiments only, and is not intended to be limiting.
Reference in the specification to "an embodiment" means that a particular feature, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention. Thus, the appearances of the phrase "an embodiment" appearing in various places throughout the specification are not necessarily all referring to the same embodiment.
Although the embodiments of the present invention have been described above, the above description is only for the convenience of understanding the present invention, and is not intended to limit the present invention. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. A piezoelectric resonant infrared sensor, comprising: the piezoelectric device comprises a substrate, electrodes and a piezoelectric material, wherein a quantum dot film is formed on the upper surface of the piezoelectric material and can accelerate the temperature rise of the piezoelectric material in response to infrared light irradiation.
2. The piezoresonant infrared sensor of claim 1, wherein the quantum dot material forming the quantum dot thin film comprises: tin sulfide, tin selenide, tin telluride, lead sulfide, lead selenide, lead telluride, indium arsenide, indium antimonide, mercury selenide, mercury telluride and alloyed quantum dots thereof, wherein the alloyed quantum dots comprise PbxSn1-xTe、PbxSn1-xSe、InAsxSb1-xAnd HgxCd1-xTe, where x represents the number percentage of ions in each alloyed quantum dot.
3. The piezoresonant infrared sensor of claim 1, wherein the extent of the absorption band edge of the quantum dot thin film is adjustable.
4. The piezoelectric resonant infrared sensor of claim 1, wherein the piezoelectric material is selected from one of quartz, aluminum nitride, lead zirconate titanate piezoelectric ceramic, zinc oxide, and lithium niobate, the electrode is selected from one of titanium, gold, aluminum, platinum, and graphene, and the substrate is a silicon substrate.
5. A piezoresonant infrared sensor array comprising a plurality of piezoresonant infrared sensors of claim 1, wherein the quantum dot thin film of each piezoresonant infrared sensor has a different absorption band edge.
6. A method of manufacturing a piezoelectric resonant infrared sensor, comprising: a quantum dot thin film is formed on an upper surface of a piezoelectric resonant infrared sensor including a substrate, electrodes, and a piezoelectric material, the quantum dot thin film being capable of accelerating a temperature rise of the piezoelectric material in response to infrared light irradiation.
7. The manufacturing method according to claim 6, wherein the quantum dot material forming the quantum dot thin film comprises: tin sulfide, tin selenide, tin telluride, lead sulfide, lead selenide, lead telluride, indium arsenide, indium antimonide, mercury selenide, mercury telluride and alloyed quantum dots thereof, wherein the alloyed quantum dots comprise PbxSn1-xTe、PbxSn1-xSe、InAsxSb1-xAnd HgxCd1-xTe, where x represents the number percentage of ions in each alloyed quantum dot.
8. The manufacturing method according to claim 6, further comprising: the range of the absorption band edge of the quantum dot film is adjustable by selecting different quantum dot materials and/or by controlling the synthesis parameters of the quantum dots.
9. The manufacturing method according to claim 6, wherein the method of forming the quantum dot thin film comprises: drop coating, spin coating, blade coating, and ink jet printing.
10. The manufacturing method according to claim 6, wherein the piezoelectric material is selected from one of quartz, aluminum nitride, lead zirconate titanate piezoelectric ceramics, zinc oxide, and lithium niobate, the electrode is selected from one of titanium, gold, aluminum, platinum, and graphene, and the substrate is a silicon substrate.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114084874A (en) * | 2021-11-18 | 2022-02-25 | 中国空间技术研究院 | Preparation method of tin telluride colloidal quantum dots |
| CN115109467A (en) * | 2022-05-27 | 2022-09-27 | 北京理工大学 | Method for regulating and controlling infrared colloid quantum dot band transport by normal-temperature miscible ligand exchange and application |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103633183A (en) * | 2013-11-18 | 2014-03-12 | 西安电子科技大学 | Graphene medium-far infrared detector and preparing method thereof |
| US20140361249A1 (en) * | 2013-06-11 | 2014-12-11 | National Taiwan University | Quantum dot infrared photodetector |
| CN106115603A (en) * | 2016-07-19 | 2016-11-16 | 中国科学院重庆绿色智能技术研究院 | A kind of porous/quantum dot composite construction infrared detector unit and preparation method |
| CN107275421A (en) * | 2017-06-07 | 2017-10-20 | 华中科技大学 | A kind of quantum dot light electric explorer and preparation method thereof |
| CN107993923A (en) * | 2017-12-08 | 2018-05-04 | 青岛大学 | A kind of controllable quantum dots array preparation method based on photo-thermal effect |
| CN110231095A (en) * | 2019-05-23 | 2019-09-13 | 武汉大学 | A kind of phasmon surface acoustic wave resonance infrared sensor |
| JP2020126955A (en) * | 2019-02-06 | 2020-08-20 | シャープ株式会社 | Infrared detector and image sensor including the same |
| CN111916513A (en) * | 2020-08-21 | 2020-11-10 | 合肥的卢深视科技有限公司 | Infrared detector, infrared imager and preparation method of infrared detector |
-
2021
- 2021-06-11 CN CN202110652579.XA patent/CN113566979B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140361249A1 (en) * | 2013-06-11 | 2014-12-11 | National Taiwan University | Quantum dot infrared photodetector |
| CN103633183A (en) * | 2013-11-18 | 2014-03-12 | 西安电子科技大学 | Graphene medium-far infrared detector and preparing method thereof |
| CN106115603A (en) * | 2016-07-19 | 2016-11-16 | 中国科学院重庆绿色智能技术研究院 | A kind of porous/quantum dot composite construction infrared detector unit and preparation method |
| CN107275421A (en) * | 2017-06-07 | 2017-10-20 | 华中科技大学 | A kind of quantum dot light electric explorer and preparation method thereof |
| CN107993923A (en) * | 2017-12-08 | 2018-05-04 | 青岛大学 | A kind of controllable quantum dots array preparation method based on photo-thermal effect |
| JP2020126955A (en) * | 2019-02-06 | 2020-08-20 | シャープ株式会社 | Infrared detector and image sensor including the same |
| CN110231095A (en) * | 2019-05-23 | 2019-09-13 | 武汉大学 | A kind of phasmon surface acoustic wave resonance infrared sensor |
| CN111916513A (en) * | 2020-08-21 | 2020-11-10 | 合肥的卢深视科技有限公司 | Infrared detector, infrared imager and preparation method of infrared detector |
Non-Patent Citations (2)
| Title |
|---|
| GUONENG CAI ET AL.: "Ti3C2 MXene quantum dot-encapsulated liposomes for photothermal immunoassays using a portable near-infrared imaging camera on a smartphone", 《NANOSCALE》 * |
| 朱晓秀等: "量子点增强硅基探测成像器件的研究进展", 《中国光学》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114084874A (en) * | 2021-11-18 | 2022-02-25 | 中国空间技术研究院 | Preparation method of tin telluride colloidal quantum dots |
| CN114084874B (en) * | 2021-11-18 | 2023-06-20 | 中国空间技术研究院 | Preparation method of tin telluride colloid quantum dot |
| CN115109467A (en) * | 2022-05-27 | 2022-09-27 | 北京理工大学 | Method for regulating and controlling infrared colloid quantum dot band transport by normal-temperature miscible ligand exchange and application |
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