CN113563077A - Sulfide target material applied to solar cell and preparation method thereof - Google Patents
Sulfide target material applied to solar cell and preparation method thereof Download PDFInfo
- Publication number
- CN113563077A CN113563077A CN202110827179.8A CN202110827179A CN113563077A CN 113563077 A CN113563077 A CN 113563077A CN 202110827179 A CN202110827179 A CN 202110827179A CN 113563077 A CN113563077 A CN 113563077A
- Authority
- CN
- China
- Prior art keywords
- cadmium
- sulfide
- target material
- solar cell
- material applied
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/547—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on sulfides or selenides or tellurides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/645—Pressure sintering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
- C23C14/0629—Sulfides, selenides or tellurides of zinc, cadmium or mercury
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
- C04B2235/6562—Heating rate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
- C04B2235/6567—Treatment time
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/658—Atmosphere during thermal treatment
- C04B2235/6581—Total pressure below 1 atmosphere, e.g. vacuum
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/66—Specific sintering techniques, e.g. centrifugal sintering
- C04B2235/661—Multi-step sintering
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/77—Density
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a sulfide target material applied to a solar cell and a preparation method thereof, wherein the sulfide target material comprises the following components in percentage by weight: 0.08-0.2% of cadmium stearate, 0.1-0.4% of cadmium acetate and the balance of cadmium sulfide. The preparation method of the sulfide target material applied to the solar cell comprises the following steps: s1, adding cadmium acetate into absolute ethyl alcohol to prepare a cadmium acetate solution, adding cadmium stearate into the cadmium acetate solution, and uniformly stirring to obtain a mixed solution; s2, adding cadmium sulfide into the mixed solution, uniformly stirring, centrifuging, filtering and drying to obtain mixed powder; and S3, carrying out heat treatment on the mixed powder, and carrying out hot-pressing sintering after the heat treatment to obtain the sulfide target material applied to the solar cell. According to the sulfide target material applied to the solar cell and the preparation method thereof, the sulfide target material has high density and good conductivity, and has higher photoelectric conversion efficiency when being applied to the solar cell.
Description
Technical Field
The invention relates to the technical field of targets, in particular to a sulfide target applied to a solar cell and a preparation method thereof.
Background
The CdS material has excellent photoelectric characteristics as an important semiconductor material, and is widely applied to the fields of photoelectric detection and photocatalysis.
CN 104264118A discloses a cadmium sulfide ceramic target material and a preparation method thereof, and particularly discloses a method for preparing the cadmium sulfide ceramic target material by using cadmium chloride as a fluxing agent; the sum of the mass percentages of all the components is calculated according to 100%, the mass percentage of the cadmium sulfide in the cadmium sulfide ceramic target material is 97-99.5%, and the mass percentage of the cadmium chloride is 0.5-3%. Because cadmium chloride is used as a cosolvent, chlorine can volatilize in the sintering process, but part of the chlorine still remains in the target material to become impurity elements, and the purity of the target material is lower, so that the density and the conductivity of the target material are still insufficient.
Disclosure of Invention
The invention provides a sulfide target material applied to a solar cell and a preparation method thereof.
The invention adopts the following technical scheme for solving the technical problems:
a sulfide target material applied to a solar cell comprises the following components in percentage by weight: 0.08-0.2% of cadmium stearate, 0.1-0.4% of cadmium acetate and the balance of cadmium sulfide.
In the research of a large number of sulfide target materials, the invention discovers that the sulfide target material prepared by doping cadmium stearate and cadmium acetate into cadmium sulfide has high density and good conductivity, and can be well applied to solar cells.
The inventor finds that the effect of singly doping the cadmium stearate or the cadmium acetate is poor, and the density and the conductivity of the sulfide target material can be obviously improved only by doping the cadmium stearate or the cadmium acetate simultaneously.
The inventor finds that the doping amount of the cadmium stearate or the cadmium acetate (0.08-0.2% of the cadmium stearate and 0.1-0.4% of the cadmium acetate) is the best effect within the range, if the doping amount is too small, the effect is difficult to be exerted, if the doping amount is more than the boundary value, excessive impurities are introduced, and the impurities are difficult to remove in the subsequent steps, so that the density and the conductivity of the sulfide target material are influenced.
As a preferable scheme, the sulfide target material applied to the solar cell comprises the following components in percentage by weight: 0.08-0.15% of cadmium stearate, 0.1-0.3% of cadmium acetate and the balance of cadmium sulfide.
As a preferable scheme, the sulfide target material applied to the solar cell comprises the following components in percentage by weight: 0.12% of cadmium stearate, 0.28% of cadmium acetate and the balance of cadmium sulfide.
The inventor finds that the obtained sulfide target material has the highest density and the best conductivity by adopting the weight percentage.
The invention also provides a preparation method of the sulfide target material applied to the solar cell, which comprises the following steps:
s1, adding cadmium acetate into absolute ethyl alcohol to prepare a cadmium acetate solution, adding cadmium stearate into the cadmium acetate solution, and uniformly stirring to obtain a mixed solution;
s2, adding cadmium sulfide into the mixed solution, uniformly stirring, centrifuging, filtering and drying to obtain mixed powder;
and S3, carrying out heat treatment on the mixed powder, and carrying out hot-pressing sintering after the heat treatment to obtain the sulfide target material applied to the solar cell.
The inventor adopts the combination of heat treatment and hot-pressing sintering, can effectively remove some introduced impurity elements and improve the purity.
The inventor finds that cadmium acetate is added into absolute ethyl alcohol to prepare a cadmium acetate solution, cadmium stearate is added into the cadmium acetate solution, cadmium sulfide is added into the mixed solution and uniformly mixed, and compared with the mode of directly mixing cadmium acetate, cadmium stearate and cadmium sulfide (for example, mixing by adopting a high-speed mixer), the method for mixing the solution has the advantage that the density and the conductivity of the obtained target material are better.
As a preferred scheme, the sulfide target material comprises, by weight: 0.08-0.2% of cadmium stearate, 0.1-0.4% of cadmium acetate and the balance of cadmium sulfide.
As a preferred scheme, the sulfide target material comprises, by weight: 0.08-0.15% of cadmium stearate, 0.1-0.3% of cadmium acetate and the balance of cadmium sulfide.
As a preferred scheme, the sulfide target material comprises, by weight: 0.12% of cadmium stearate, 0.28% of cadmium acetate and the balance of cadmium sulfide.
Preferably, the centrifugation speed in S2 is 3000-5000 rpm, and the centrifugation time is 10-15 min.
Preferably, the degree of vacuum in the heat treatment in S3 is 1 × 10-3Pa～5× 10-3Pa, the heat treatment temperature is 400-700 ℃, and the heat treatment time is 40-100 min.
As a preferable scheme, the sintering in S3 is specifically:
under the protection of argon atmosphere, firstly heating to 350-420 ℃ at the speed of 8-15 ℃/min, and preserving heat for 20-50 min;
heating to 700-780 ℃ at a speed of 5-10 ℃/min, and preserving heat for 30-60 min;
finally, heating to 1050-1200 ℃ at a speed of 4-8 ℃/min, and preserving heat for 10-20 min;
the applied pressure in the sintering process is 12-18 MPa.
The invention has the beneficial effects that: according to the sulfide target material applied to the solar cell and the preparation method thereof, the sulfide target material has high density and good conductivity, and has higher photoelectric conversion efficiency when being applied to the solar cell.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is obvious that the described embodiments are a part of the embodiments of the present invention, but not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
A preparation method of a sulfide target material applied to a solar cell comprises the following steps:
s1, adding 0.28 weight part of cadmium acetate into 200 weight parts of absolute ethyl alcohol to prepare a cadmium acetate solution, adding 0.12 weight part of cadmium stearate into the cadmium acetate solution, and stirring for 50min at a rotating speed of 200rpm in a water bath at 60 ℃ to obtain a mixed solution;
s2, adding 99.6 parts by weight of cadmium sulfide into the mixed solution, stirring for 2 hours at the rotating speed of 400rpm, centrifuging for 12 minutes at the rotating speed of 5000rpm, filtering, and drying to obtain mixed powder;
s3, putting the mixed powder in a vacuum degree of 4 x 10-3And (3) carrying out heat treatment for 60min at the temperature of Pa and 480 ℃, and carrying out hot-pressing sintering after the heat treatment to obtain the sulfide target material applied to the solar cell.
The sintering in the S3 is specifically as follows:
under the protection of argon atmosphere, firstly heating to 400 ℃ at a speed of 10 ℃/min, and preserving heat for 40 min;
then raising the temperature to 760 ℃ at the speed of 6 ℃/min, and preserving the temperature for 45 min;
finally, heating to 1120 ℃ at a speed of 5 ℃/min, and preserving heat for 15 min;
the applied pressure during sintering is 15 MPa.
The sulfide target material applied to the solar cell prepared by the embodiment has the relative density of 98.7% and the surface resistivity of 68.2 omega cm.
Example 2
A preparation method of a sulfide target material applied to a solar cell comprises the following steps:
s1, adding 0.1 part by weight of cadmium acetate into 200 parts by weight of absolute ethyl alcohol to prepare a cadmium acetate solution, adding 0.08 part by weight of cadmium stearate into the cadmium acetate solution, and stirring for 50min at a rotating speed of 200rpm in a water bath at 60 ℃ to obtain a mixed solution;
s2, adding 99.82 parts by weight of cadmium sulfide into the mixed solution, stirring for 2 hours at the rotating speed of 400rpm, centrifuging for 12 minutes at the rotating speed of 5000rpm, filtering, and drying to obtain mixed powder;
s3, putting the mixed powder in a vacuum degree of 4 x 10-3And (3) carrying out heat treatment for 60min at the temperature of Pa and 480 ℃, and carrying out hot-pressing sintering after the heat treatment to obtain the sulfide target material applied to the solar cell.
The sintering in the S3 is specifically as follows:
under the protection of argon atmosphere, firstly heating to 400 ℃ at a speed of 10 ℃/min, and preserving heat for 40 min;
then raising the temperature to 760 ℃ at the speed of 6 ℃/min, and preserving the temperature for 45 min;
finally, heating to 1120 ℃ at a speed of 5 ℃/min, and preserving heat for 15 min;
the applied pressure during sintering is 15 MPa.
The sulfide target material applied to the solar cell prepared by the embodiment has the relative density of 90.7% and the surface resistivity of 80.9 omega cm.
Example 3
A preparation method of a sulfide target material applied to a solar cell comprises the following steps:
s1, adding 0.4 part by weight of cadmium acetate into 200 parts by weight of absolute ethyl alcohol to prepare a cadmium acetate solution, adding 0.2 part by weight of cadmium stearate into the cadmium acetate solution, and stirring for 50min at a rotating speed of 200rpm in a water bath at 60 ℃ to obtain a mixed solution;
s2, adding 99.4 parts by weight of cadmium sulfide into the mixed solution, stirring at the rotating speed of 400rpm for 2 hours, centrifuging at the rotating speed of 5000rpm for 12min, filtering, and drying to obtain mixed powder;
s3, putting the mixed powder in a vacuum degree of 4 x 10-3And (3) carrying out heat treatment for 60min at the temperature of Pa and 480 ℃, and carrying out hot-pressing sintering after the heat treatment to obtain the sulfide target material applied to the solar cell.
The sintering in the S3 is specifically as follows:
under the protection of argon atmosphere, firstly heating to 400 ℃ at a speed of 10 ℃/min, and preserving heat for 40 min;
then raising the temperature to 760 ℃ at the speed of 6 ℃/min, and preserving the temperature for 45 min;
finally, heating to 1120 ℃ at a speed of 5 ℃/min, and preserving heat for 15 min;
the applied pressure during sintering is 15 MPa.
The sulfide target material applied to the solar cell prepared by the embodiment has the relative density of 91.3% and the surface resistivity of 79.6 omega cm.
Example 4
A preparation method of a sulfide target material applied to a solar cell comprises the following steps:
s1, adding 0.3 part by weight of cadmium acetate into 200 parts by weight of absolute ethyl alcohol to prepare a cadmium acetate solution, adding 0.18 part by weight of cadmium stearate into the cadmium acetate solution, and stirring for 50min at a rotating speed of 200rpm in a water bath at 60 ℃ to obtain a mixed solution;
s2, adding 99.52 parts by weight of cadmium sulfide into the mixed solution, stirring for 2 hours at the rotating speed of 400rpm, centrifuging for 12 minutes at the rotating speed of 5000rpm, filtering, and drying to obtain mixed powder;
s3, putting the mixed powder in a vacuum degree of 4 x 10-3And (3) carrying out heat treatment for 60min at the temperature of Pa and 480 ℃, and carrying out hot-pressing sintering after the heat treatment to obtain the sulfide target material applied to the solar cell.
The sintering in the S3 is specifically as follows:
under the protection of argon atmosphere, firstly heating to 400 ℃ at a speed of 10 ℃/min, and preserving heat for 40 min;
then raising the temperature to 760 ℃ at the speed of 6 ℃/min, and preserving the temperature for 45 min;
finally, heating to 1120 ℃ at a speed of 5 ℃/min, and preserving heat for 15 min;
the applied pressure during sintering is 15 MPa.
The sulfide target material applied to the solar cell prepared by the embodiment has the relative density of 92.2% and the surface resistivity of 76.5 omega cm.
Example 5
A preparation method of a sulfide target material applied to a solar cell comprises the following steps:
s1, adding 0.28 weight part of cadmium acetate into 200 weight parts of absolute ethyl alcohol to prepare a cadmium acetate solution, adding 0.12 weight part of cadmium stearate into the cadmium acetate solution, and stirring for 50min at a rotating speed of 200rpm in a water bath at 60 ℃ to obtain a mixed solution;
s2, adding 99.6 parts by weight of cadmium sulfide into the mixed solution, stirring for 2 hours at the rotating speed of 400rpm, centrifuging for 12 minutes at the rotating speed of 5000rpm, filtering, and drying to obtain mixed powder;
s3, mixing the powder under the vacuum degree of 1 × 10-3And (3) carrying out heat treatment for 100min at the temperature of Pa and 400 ℃, and carrying out hot-pressing sintering after the heat treatment to obtain the sulfide target material applied to the solar cell.
The sintering in the S3 is specifically as follows:
under the protection of argon atmosphere, firstly heating to 350 ℃ at the speed of 8 ℃/min, and preserving heat for 50 min;
heating to 700 deg.C at a rate of 5 deg.C/min, and maintaining for 60 min;
finally, heating to 1050 ℃ at a speed of 4 ℃/min, and preserving heat for 20 min;
the applied pressure during sintering is 12 MPa.
The sulfide target material applied to the solar cell prepared by the embodiment has the relative density of 91.8% and the surface resistivity of 77.6 omega cm.
Example 6
A preparation method of a sulfide target material applied to a solar cell comprises the following steps:
s1, adding 0.28 weight part of cadmium acetate into 200 weight parts of absolute ethyl alcohol to prepare a cadmium acetate solution, adding 0.12 weight part of cadmium stearate into the cadmium acetate solution, and stirring for 50min at a rotating speed of 200rpm in a water bath at 60 ℃ to obtain a mixed solution;
s2, adding 99.6 parts by weight of cadmium sulfide into the mixed solution, stirring for 2 hours at the rotating speed of 400rpm, centrifuging for 12 minutes at the rotating speed of 5000rpm, filtering, and drying to obtain mixed powder;
s3, placing the mixed powder in a vacuum degree of 5 x 10-3And (3) carrying out heat treatment for 40min at the temperature of Pa and 700 ℃, and carrying out hot-pressing sintering after the heat treatment to obtain the sulfide target material applied to the solar cell.
The sintering in the S3 is specifically as follows:
under the protection of argon atmosphere, firstly heating to 420 ℃ at a speed of 15 ℃/min, and preserving heat for 20 min;
heating to 780 ℃ at a speed of 10 ℃/min, and preserving heat for 30 min;
finally, heating to 1200 ℃ at the speed of 8 ℃/min, and preserving heat for 10 min;
the applied pressure during sintering is 18 MPa.
The sulfide target material applied to the solar cell prepared by the embodiment has the relative density of 91.0% and the surface resistivity of 79.9 omega cm.
Example 7
A preparation method of a sulfide target material applied to a solar cell comprises the following steps:
s1, adding 0.28 weight part of cadmium acetate, 0.12 weight part of cadmium sulfide and 99.6 weight parts of cadmium sulfide into a high-speed mixer, and uniformly mixing to obtain mixed powder;
s2, putting the mixed powder in a vacuum degree of 4 x 10-3And (3) carrying out heat treatment for 60min at the temperature of Pa and 480 ℃, and carrying out hot-pressing sintering after the heat treatment to obtain the sulfide target material applied to the solar cell.
The sintering in the S2 is specifically as follows:
under the protection of argon atmosphere, firstly heating to 400 ℃ at a speed of 10 ℃/min, and preserving heat for 40 min;
then raising the temperature to 760 ℃ at the speed of 6 ℃/min, and preserving the temperature for 45 min;
finally, heating to 1120 ℃ at a speed of 5 ℃/min, and preserving heat for 15 min;
the applied pressure during sintering is 15 MPa.
The sulfide target material applied to the solar cell prepared by the embodiment has the relative density of 90.4% and the surface resistivity of 81.3 omega cm.
Comparative example 1
Comparative example 1 differs from example 1 in that comparative example 1 does not have cadmium stearate added, and the other is the same.
A preparation method of a sulfide target material applied to a solar cell comprises the following steps:
s1, adding 0.28 weight part of cadmium acetate into 200 weight parts of absolute ethyl alcohol to prepare a cadmium acetate solution;
s2, adding 99.72 parts by weight of cadmium sulfide into a cadmium acetate solution, stirring at a rotating speed of 400rpm for 2 hours, centrifuging at a rotating speed of 5000rpm for 12min, filtering, and drying to obtain mixed powder;
s3, putting the mixed powder in a vacuum degree of 4 x 10-3And (3) carrying out heat treatment for 60min at the temperature of Pa and 480 ℃, and carrying out hot-pressing sintering after the heat treatment to obtain the sulfide target material applied to the solar cell.
The sintering in the S3 is specifically as follows:
under the protection of argon atmosphere, firstly heating to 400 ℃ at a speed of 10 ℃/min, and preserving heat for 40 min;
then raising the temperature to 760 ℃ at the speed of 6 ℃/min, and preserving the temperature for 45 min;
finally, heating to 1120 ℃ at a speed of 5 ℃/min, and preserving heat for 15 min;
the applied pressure during sintering is 15 MPa.
The sulfide target material applied to the solar cell prepared by the comparative example has the relative density of 86.3% and the surface resistivity of 88.6 omega cm.
Comparative example 2
Comparative example 2 is different from example 1 in that comparative example 2 does not add cadmium acetate, and the others are the same.
A preparation method of a sulfide target material applied to a solar cell comprises the following steps:
s1, adding 0.12 part by weight of cadmium stearate into absolute ethyl alcohol, and stirring for 50min at a rotating speed of 200rpm in a water bath at 60 ℃ to obtain a cadmium stearate solution;
s2, adding 99.6 parts by weight of cadmium sulfide into a cadmium stearate solution, stirring at a rotating speed of 400rpm for 2 hours, centrifuging at a rotating speed of 5000rpm for 12min, filtering, and drying to obtain mixed powder;
s3, putting the mixed powder in a vacuum degree of 4 x 10-3And (3) carrying out heat treatment for 60min at the temperature of Pa and 480 ℃, and carrying out hot-pressing sintering after the heat treatment to obtain the sulfide target material applied to the solar cell.
The sintering in the S3 is specifically as follows:
under the protection of argon atmosphere, firstly heating to 400 ℃ at a speed of 10 ℃/min, and preserving heat for 40 min;
then raising the temperature to 760 ℃ at the speed of 6 ℃/min, and preserving the temperature for 45 min;
finally, heating to 1120 ℃ at a speed of 5 ℃/min, and preserving heat for 15 min;
the applied pressure during sintering is 15 MPa.
The sulfide target material applied to the solar cell prepared by the comparative example has the relative density of 86.0% and the surface resistivity of 89.2 omega cm.
Comparative example 3
Comparative example 3 differs from example 1 in that comparative example 3 does not add cadmium stearate nor cadmium acetate, the other things being equal.
A preparation method of a sulfide target material applied to a solar cell comprises the following steps:
s1, cadmium sulfide is added under the condition of vacuum degree of 4 multiplied by 10-3And (3) carrying out heat treatment for 60min at the temperature of Pa and 480 ℃, and carrying out hot-pressing sintering after the heat treatment to obtain the sulfide target material applied to the solar cell.
The sintering in the S1 is specifically as follows:
under the protection of argon atmosphere, firstly heating to 400 ℃ at a speed of 10 ℃/min, and preserving heat for 40 min;
then raising the temperature to 760 ℃ at the speed of 6 ℃/min, and preserving the temperature for 45 min;
finally, heating to 1120 ℃ at a speed of 5 ℃/min, and preserving heat for 15 min;
the applied pressure during sintering is 15 MPa.
The sulfide target material applied to the solar cell prepared by the comparative example has the relative density of 82.1% and the surface resistivity of 95.4 omega cm.
Comparative example 4
Comparative example 4 is different from example 1 in that comparative example 4 does not employ heat treatment, and the others are the same.
A preparation method of a sulfide target material applied to a solar cell comprises the following steps:
s1, adding 0.28 weight part of cadmium acetate into 200 weight parts of absolute ethyl alcohol to prepare a cadmium acetate solution, adding 0.12 weight part of cadmium stearate into the cadmium acetate solution, and stirring for 50min at a rotating speed of 200rpm in a water bath at 60 ℃ to obtain a mixed solution;
s2, adding 99.6 parts by weight of cadmium sulfide into the mixed solution, stirring for 2 hours at the rotating speed of 400rpm, centrifuging for 12 minutes at the rotating speed of 5000rpm, filtering, and drying to obtain mixed powder;
and S3, carrying out hot-pressing sintering on the mixed powder to obtain the sulfide target material applied to the solar cell.
The sintering in the S3 is specifically as follows:
under the protection of argon atmosphere, firstly heating to 400 ℃ at a speed of 10 ℃/min, and preserving heat for 40 min;
then raising the temperature to 760 ℃ at the speed of 6 ℃/min, and preserving the temperature for 45 min;
finally, heating to 1120 ℃ at a speed of 5 ℃/min, and preserving heat for 15 min;
the applied pressure during sintering is 15 MPa.
The sulfide target material applied to the solar cell prepared by the comparative example has the relative density of 87.2% and the surface resistivity of 86.9 omega cm.
In light of the foregoing description of preferred embodiments according to the invention, it is clear that many changes and modifications can be made by the person skilled in the art without departing from the scope of the invention. The technical scope of the present invention is not limited to the contents of the specification, and must be determined according to the scope of the claims.
Claims (10)
1. A sulfide target material applied to a solar cell is characterized by comprising the following components in percentage by weight: 0.08-0.2% of cadmium stearate, 0.1-0.4% of cadmium acetate and the balance of cadmium sulfide.
2. The sulfide target material applied to the solar cell according to claim 1, wherein the sulfide target material comprises the following components in percentage by weight: 0.08-0.15% of cadmium stearate, 0.1-0.3% of cadmium acetate and the balance of cadmium sulfide.
3. The sulfide target material applied to the solar cell according to claim 1, wherein the sulfide target material comprises the following components in percentage by weight: 0.12% of cadmium stearate, 0.28% of cadmium acetate and the balance of cadmium sulfide.
4. A preparation method of a sulfide target material applied to a solar cell is characterized by comprising the following steps:
s1, adding cadmium acetate into absolute ethyl alcohol to prepare a cadmium acetate solution, adding cadmium stearate into the cadmium acetate solution, and uniformly stirring to obtain a mixed solution;
s2, adding cadmium sulfide into the mixed solution, uniformly stirring, centrifuging, filtering and drying to obtain mixed powder;
and S3, carrying out heat treatment on the mixed powder, and carrying out hot-pressing sintering after the heat treatment to obtain the sulfide target material applied to the solar cell.
5. The method according to claim 4, wherein the sulfide target material comprises, by weight: 0.08-0.2% of cadmium stearate, 0.1-0.4% of cadmium acetate and the balance of cadmium sulfide.
6. The method according to claim 4, wherein the sulfide target material comprises, by weight: 0.08-0.15% of cadmium stearate, 0.1-0.3% of cadmium acetate and the balance of cadmium sulfide.
7. The method according to claim 4, wherein the sulfide target material comprises, by weight: 0.12% of cadmium stearate, 0.28% of cadmium acetate and the balance of cadmium sulfide.
8. The method for preparing the sulfide target material for the solar cell according to claim 4, wherein the centrifugation speed in S2 is 3000-5000 rpm, and the centrifugation time is 10-15 min.
9. The method according to claim 4, wherein the degree of vacuum of the heat treatment in S3 is 1 x 10-3Pa～5× 10-3Pa, the heat treatment temperature is 400-700 ℃, and the heat treatment time is 40-100 min.
10. The method according to claim 4, wherein the sintering in S3 is specifically as follows:
under the protection of argon atmosphere, firstly heating to 350-420 ℃ at the speed of 8-15 ℃/min, and preserving heat for 20-50 min;
heating to 700-780 ℃ at a speed of 5-10 ℃/min, and preserving heat for 30-60 min;
finally, heating to 1050-1200 ℃ at a speed of 4-8 ℃/min, and preserving heat for 10-20 min;
the applied pressure in the sintering process is 12-18 MPa.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110827179.8A CN113563077A (en) | 2021-07-21 | 2021-07-21 | Sulfide target material applied to solar cell and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110827179.8A CN113563077A (en) | 2021-07-21 | 2021-07-21 | Sulfide target material applied to solar cell and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113563077A true CN113563077A (en) | 2021-10-29 |
Family
ID=78166036
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110827179.8A Pending CN113563077A (en) | 2021-07-21 | 2021-07-21 | Sulfide target material applied to solar cell and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113563077A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1601770A (en) * | 2004-10-26 | 2005-03-30 | 中国科学院长春应用化学研究所 | Cadmium sulfide quantum point synthetized by 2-phase heating process |
| CN103184045A (en) * | 2013-05-08 | 2013-07-03 | 河南大学 | Preparation method of semiconductor nanocrystals with II type core-shell structures |
| CN104264118A (en) * | 2014-10-13 | 2015-01-07 | 福州大学 | CdS (cadmium sulfide) ceramic target material and preparation method thereof |
| CN106449121A (en) * | 2016-11-29 | 2017-02-22 | 吉林大学 | CdS/TiO2 composite nanofilm, as well as preparation method and application thereof |
| CN108295903A (en) * | 2018-01-26 | 2018-07-20 | 成都新柯力化工科技有限公司 | A kind of cadmiumsulfide quantum dot-phthalein mountain valley with clumps of trees and bamboo bronzing catalyst and preparation method for hydrogen manufacturing |
| CN109698113A (en) * | 2017-10-20 | 2019-04-30 | Tcl集团股份有限公司 | Zinc-oxide film and preparation method thereof, luminescent device |
| CN109988555A (en) * | 2017-12-29 | 2019-07-09 | Tcl集团股份有限公司 | A kind of quantum dot and the preparation method and application thereof |
-
2021
- 2021-07-21 CN CN202110827179.8A patent/CN113563077A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1601770A (en) * | 2004-10-26 | 2005-03-30 | 中国科学院长春应用化学研究所 | Cadmium sulfide quantum point synthetized by 2-phase heating process |
| CN103184045A (en) * | 2013-05-08 | 2013-07-03 | 河南大学 | Preparation method of semiconductor nanocrystals with II type core-shell structures |
| CN104264118A (en) * | 2014-10-13 | 2015-01-07 | 福州大学 | CdS (cadmium sulfide) ceramic target material and preparation method thereof |
| CN106449121A (en) * | 2016-11-29 | 2017-02-22 | 吉林大学 | CdS/TiO2 composite nanofilm, as well as preparation method and application thereof |
| CN109698113A (en) * | 2017-10-20 | 2019-04-30 | Tcl集团股份有限公司 | Zinc-oxide film and preparation method thereof, luminescent device |
| CN109988555A (en) * | 2017-12-29 | 2019-07-09 | Tcl集团股份有限公司 | A kind of quantum dot and the preparation method and application thereof |
| CN108295903A (en) * | 2018-01-26 | 2018-07-20 | 成都新柯力化工科技有限公司 | A kind of cadmiumsulfide quantum dot-phthalein mountain valley with clumps of trees and bamboo bronzing catalyst and preparation method for hydrogen manufacturing |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109796209B (en) | (Ti, Zr, Hf, Ta, Nb) B2High-entropy ceramic powder and preparation method thereof | |
| CN106803538A (en) | The two-dimentional organic inorganic hybridization perovskite thin film material of vertical orientated structure | |
| CN106962401A (en) | A kind of preparation method of nano silver antimicrobials | |
| CN109534305B (en) | Method for preparing SnSe by solution method | |
| CN113563077A (en) | Sulfide target material applied to solar cell and preparation method thereof | |
| CN110277498B (en) | Preparation method of perovskite battery | |
| CN113913939B (en) | Preparation method of low granularity and low dark point semi-insulating gallium arsenide wafer | |
| CN110343272B (en) | Bacterial cellulose nanofiber reinforced konjac gum edible film and preparation method thereof | |
| CN109735724A (en) | The method for preparing 6N high purity indium is once evaporated in vacuo | |
| JP2021502944A5 (en) | ||
| CN114956823B (en) | Preparation method of conductive cadmium telluride target | |
| CN109096660A (en) | Graphite oxide/polyvinylidene fluoride composite material preparation method | |
| CN103396170B (en) | The preparation method of crucible pot coating for polysilicon casting ingot and crucible | |
| CN113735110B (en) | Purification method of semiconductor-grade graphite powder | |
| CN113044816B (en) | Preparation method of porous aluminum nitride raw material for aluminum nitride crystal growth | |
| CN110904374B (en) | Preparation method of sodium-doped molybdenum alloy material | |
| CN113594267A (en) | Method for forming oxide layer | |
| KR102091833B1 (en) | Method for producing of silica using biomass | |
| CN103911665A (en) | Impurity removal method in process of preparation of tellurium zinc cadmium crystal by use of carbon-plated quartz crucible | |
| CN108002838B (en) | High-conductivity cadmium sulfide target material and preparation method thereof | |
| CN111647857A (en) | Method for recycling residual target of cadmium telluride thin film battery | |
| CN104892035A (en) | Preparation method of ultrahigh-purity quartz ceramic crucible | |
| CN109400925A (en) | A method of degradable packaging film is made with tamarind seeds | |
| CN110699558A (en) | Method for extracting high-purity tin from industrial waste | |
| CN112542550B (en) | MXene-based high-efficiency perovskite solar cell and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20211029 |
|
| RJ01 | Rejection of invention patent application after publication |