CN113555687A - Reconfigurable antenna and preparation method thereof - Google Patents

Reconfigurable antenna and preparation method thereof Download PDF

Info

Publication number
CN113555687A
CN113555687A CN202110814102.7A CN202110814102A CN113555687A CN 113555687 A CN113555687 A CN 113555687A CN 202110814102 A CN202110814102 A CN 202110814102A CN 113555687 A CN113555687 A CN 113555687A
Authority
CN
China
Prior art keywords
switch
antenna
reconfigurable antenna
resonance
top electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202110814102.7A
Other languages
Chinese (zh)
Inventor
陈杰智
詹学鹏
梅俊瑶
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shandong University
Original Assignee
Shandong University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shandong University filed Critical Shandong University
Priority to CN202110814102.7A priority Critical patent/CN113555687A/en
Publication of CN113555687A publication Critical patent/CN113555687A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q23/00—Antennas with active circuits or circuit elements integrated within them or attached to them
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
    • H05K3/143—Masks therefor

Abstract

The invention provides a reconfigurable antenna based on a two-end resistive memory, which comprises a substrate, a metal main transmission line, a resonant structure, a grounding plate and a resistive memory switch. A method for manufacturing a reconfigurable antenna is provided. The flexible reconfigurable antenna is realized by taking RRAM as an example, the substrate is made of PET material with good bending property and light transmittance, metal is manufactured on the flexible substrate through vacuum evaporation, and the RRAM switch is realized in the vertical direction of the overlapped part of the structure. The RRAM has the characteristics of resistance state change and non-volatility under a certain voltage, the switch is opened and closed by applying voltage to the switch, the surface current path of the antenna is changed, and the frequency reconstruction characteristic of the antenna is realized. Through simulation verification under two different structures, the switching mode based on the two-end resistance type storage technology has a good effect on reconfiguration of antenna frequency.

Description

Reconfigurable antenna and preparation method thereof
Technical Field
The invention relates to the field of communication, in particular to a reconfigurable antenna for realizing a switch on-off function based on the characteristic that a two-end resistive memory realizes high-low resistance state conversion under the action of an external voltage and a preparation method thereof.
Background
The antenna is an important loop in the wireless communication process, if the antenna can realize communication of multiple standards, one antenna structure can correspond to multiple functions, and the antenna structure has important significance for overcoming the restriction of the antenna on the development of the whole communication system.
The traditional reconfigurable antenna usually adopts ways of photoelectric tuning, mechanical tuning and the like to realize the reconfiguration. The photoelectric tuning mode needs to load a photoelectric switch (such as PIN), so that different switch states are realized, and the radiation characteristic of the antenna is changed; mechanical tuning requires changing the antenna structure to change the radiation characteristics through micro-electro-mechanical tuning (MEMS) switches. The reconfigurable antenna can be classified into four types of reconfigurable frequency, reconfigurable directional diagram, reconfigurable frequency and directional diagram and reconfigurable polarization.
Both the photoelectric tuning and the mechanical tuning need to adopt a device with complex rigidity as a switch, the structure is complex, the volume is large, and the device cannot be bent, so that the use environment is limited.
Disclosure of Invention
The reconfigurable antenna and the preparation method thereof are provided for overcoming the defects of the prior art, the resistive random access memory with two ends is taken as a switch device, the resistive random access memory is changed in a voltage applying mode, and the current is switched on and off by utilizing the good switching ratio of the resistive random access memory, so that the reconfigurable characteristic is realized.
In order to solve the technical problem, the technical scheme adopted by the invention is as follows: a reconfigurable antenna comprises a base plate, a main transmission line, a resonant structure and a change-over switch, wherein the main transmission line is arranged on the base plate, the change-over switch is connected between the resonant structures, the change-over switch is a two-end resistive memory, and the change of the high and low resistance states of the two-end resistive memory is realized by applying voltage, so that the current path of the antenna is changed, and the reconfigurable characteristic of the antenna is realized.
Furthermore, according to the structural form of the antenna, two-end resistive memories are connected between the resonance structures, the two-end resistive memories form a switch array, two ends of each two-end resistive memory are connected with wires for controlling the switch state, the wires at two ends of each two-end resistive memory are led out to the feeder port, and after the reconfigurable antenna is packaged, the state switching of the reconfigurable antenna is realized through the voltage control of the feeder port.
Furthermore, the two-end resistive memory comprises a top electrode, a dielectric layer and a bottom electrode which are arranged in a layered mode, and when the voltage of the top electrode is higher than that of the bottom electrode, the two-end resistive memory is switched on from off; when the voltage of the bottom electrode is higher than that of the top electrode, the process from the connection to the disconnection of the two-end resistive memory is realized.
Further, the switch array realizes 2 through n two-terminal resistive memoriesnAnd (4) seed states, wherein n is a positive integer, and each state is coded to form a programmable array.
Furthermore, the resonant structure comprises a plurality of L-shaped resonant bodies which are arranged in parallel relative to the main transmission line, and the switch is arranged between two adjacent L-shaped resonant bodies and the parallel edge of the main transmission line.
Furthermore, the resonance structure comprises a plurality of groups of resonance bodies, each group of resonance bodies is composed of two vertically arranged strip-shaped resonance bodies, and the switch of each group of resonance bodies is arranged in the intersection area of the two strip-shaped resonance bodies.
The invention also discloses a preparation method of the reconfigurable antenna, which comprises the following steps:
s01), coating a mask material on the part where no metal is needed by using an electrofluid jet printer on the substrate plate, and manufacturing a main transmission line and a resonant structure which are made of metal materials by using a thermal vacuum evaporation technology;
s02), controlling the position of the change-over switch by using a mask plate, and manufacturing a bottom electrode of the two-end type resistance-type memory made of a metal material at the position of the change-over switch by using a thermal vacuum evaporation technology;
s03), manufacturing a dielectric layer on the bottom electrode by using a vacuum magnetic sputtering technology, after sputtering is finished, controlling a top electrode area by using a mask plate, and manufacturing a top electrode structure made of a metal material in the top electrode area by using a thermal vacuum evaporation technology;
in the process, the bottom electrode and the top electrode are both connected with the resonance structure to ensure the conductive property;
s04), leading out leads from the leading-out points of the top electrode and the bottom electrode to the feed port respectively, and after packaging, realizing the state switching of the reconfigurable antenna through the voltage control of the feed port.
Further, after the thermal evaporation in step S01 and step S02 is completed, the mask material is removed by ultrasonic cleaning.
Further, the base plate is a rigid base or a flexible base.
Furthermore, the main transmission line and the resonance structure are made of AL, the bottom electrode is made of Cu and has the thickness of 100nm, the dielectric layer is made of HfZrO, the sputtering time is 2h, and the thickness is 70 nm; the top electrode is made of Ag and has a thickness of 100 nm.
The invention has the beneficial effects that: the invention adopts the two-end resistive memory as the change-over switch of the antenna, and can realize the geometric change of the radiation structure body. The geometric change means that after the two-end type resistance type memory is used as a change-over switch of the antenna, other parts except the change-over switch keep the simplest structure, a complicated structure of reconfigurable design is not needed, the requirement on a substrate is avoided, and a rigid substrate or a flexible substrate can be adopted. The two-end resistive memory is nonvolatile, and the switch state can be stably maintained; the two-terminal resistive memory has durability, and the switching process can be repeatedly realized.
Compared with the traditional reconfigurable antenna switching mode, the reconfigurable antenna based on the resistance type memory has the advantages of simple structure (generally two-end devices), small volume, good bending performance and the like, and breaks through the environmental limitation of the use of the traditional switching device. The resistive memory technology is used as a key technology for realizing the reconfigurable antenna, and the method has important significance for innovativeness of device realization functions and development of future flexible electronics.
Drawings
FIG. 1 is a schematic diagram of the RRAM operating principle;
FIG. 2 is a RRAM voltage sweep I-V characteristic;
FIG. 3 is a schematic diagram of a flexible RRAM structure;
fig. 4 is a schematic diagram of the overall functional blocks of the reconfigurable antenna;
FIG. 5 is a schematic diagram of designs one and two;
FIG. 6 is an enlarged view of a portion of the diverter switch of FIG. 5 b;
FIG. 7 is a schematic diagram of a process flow for manufacturing a reconfigurable antenna;
FIG. 8 is a schematic diagram of the surface current distribution and the resonance curve of an antenna structure designed with a switch open and closed;
FIG. 9 is a schematic diagram of the surface current distribution and the resonance curve of the antenna structure with two switches designed to be opened and closed;
in the figure: 1. active electrode, 2, inert electrode, 3, base plate, 4, main transmission line, 5, resonance structure, 6, change-over switch, 7, top electrode, 8, dielectric layer, 9, bottom electrode.
Detailed Description
The invention is further described with reference to the following figures and specific embodiments.
The resistive memory can perform resistance state conversion under the action of an external voltage/current and has the performance similar to a switching device. The two-terminal resistive memory is formed by connecting controllable wires at two terminals.
At present, the nonvolatile memory with resistance conversion characteristics mainly includes: resistive Random Access Memory (RRAM), ferroelectric memory (FRAM), magnetic memory (MRAM), phase change memory (PCRAM), and the like. The RRAM has the advantages of high operating speed, low cost, good compatibility, and the like, and thus becomes the most potential storage technology. RRAM is taken as an example to illustrate the action mechanism and the application mode.
The basic mechanism of RRAM operation is shown in fig. 1. In the initial state, the resistance of the RRAM is high, corresponding to an open circuit. After a sufficiently high voltage which is positive relative to the active electrode 1 is applied to the RRAM structure, an oxidation-reduction mechanism is generated, the active electrode 1 is oxidized to release metal ions, the metal ions reach the inert electrode 2 under the action of an external electric field to generate a reduction reaction, and the generated metal atoms are attached to the inert electrode 2 and continuously accumulated, are finally connected with the active electrode, and are changed into a low-resistance state.
RRAM resistance change characteristics can be embodied by an I-V curve, as shown in FIG. 2. The applied forward voltage establishes a conductive filament in the resistance change layer, and the connection process of the conductive filament is an SET process, namely the resistance is changed from high resistance to low resistance; the applied reverse voltage breaks the structure of the conductive filament, and the process of the conductive filament breakage is a RESET process, namely the resistance is restored to a high resistance state from low resistance. Thus, a resistance change cycle process is realized.
Similarly, like MRAM, the spin direction is the same by applying a large forward current to the device, which is in a low resistance state, equivalent to the on state of the switching device; the spin direction is opposite by applying reverse heavy current, and the high-resistance state is equivalent to the off state of a switch device, so that the same function is realized.
By using the novel RRAM nonvolatile memory technology as a novel switching device of a reconfigurable antenna, the geometric change of a radiation structure body can be realized. The on-off state of the switch is changed by applying a direct-current voltage, the current path of the antenna is changed, different resonance characteristics are realized, and therefore reconfigurable characteristics are established.
Example 1
The present embodiment provides a reconfigurable antenna using a two-terminal nonvolatile resistive memory technology as a switching device, which changes its resistance change characteristic by applying a voltage, and realizes current on/off by using its good on/off ratio, thereby realizing the reconfigurable characteristic.
As shown in fig. 5, the reconfigurable antenna includes a base plate 3, a main transmission line 4 disposed above the base plate 3, resonant structures 5, and a changeover switch 6, and the changeover switch 6 is connected between the resonant structures 5.
In this embodiment, the switch 6 is a two-terminal resistive memory, and the change of the high and low resistance states of the two-terminal resistive memory is realized by applying a voltage, so as to change the current path of the antenna, thereby realizing the reconfigurable characteristic of the antenna.
Specifically, as shown in fig. 3, the two-terminal resistive memory includes a top electrode 7, a dielectric layer 8, and a bottom electrode 9, which are arranged in layers, and when a voltage higher than that of the bottom electrode 9 is applied to the top electrode 7, a process from off to on of the two-terminal resistive memory is implemented; when the voltage of the bottom electrode 9 is applied, which is higher than that of the top electrode 7, the process from the on state to the off state of the two-terminal resistive memory is realized.
In other embodiments, the switch 6 may also be implemented with other resistive memories, such as ferroelectric memory (FRAM), magnetic memory (MRAM), and phase change memory (PCRAM).
The antenna described in this embodiment can be used for a coded antenna, and the implementation manner is as follows: as shown in fig. 4, according to the antenna structure form, the two-terminal resistive memory is connected between the resonant structures, the two-terminal resistive memory forms a switch array, two terminals of the two-terminal resistive memory are connected with wires for controlling the switch state, the wires at two terminals of all the two-terminal resistive memory are led out to the feeder port through the feed wires, and after packaging, the state switching of the reconfigurable antenna is realized through the voltage control of the feeder port.
Switch array implementation 2 by n two-terminal resistive memoriesnAnd (4) seed states, wherein n is a positive integer, and each state is coded to form a programmable array. Programmable array has 2nState, mixable codes.
The reconfigurable antenna described in this embodiment has two structures, as shown in fig. 5a and 5b, respectively, the reconfigurable antenna shown in fig. 5a and 5b includes a ground plate 3 and a main transmission line 4, the ground plate 3 is made of Si material, and has a relative dielectric constant of 11.9, a length of 20mm, a width of 20mm, and a height of 0.5 mm. The main transmission line 4 is 20mm long, consistent with the length of the substrate and 0.41mm wide at the center of the upper surface of the base plate 3, and meets the impedance matching requirement of 50 omega.
The difference is that the resonant structure of the reconfigurable antenna shown in fig. 5a includes a plurality of L-shaped resonators (in this embodiment, two L-shaped resonators) arranged in parallel with the main transmission line, and the switch is arranged between the two L-shaped resonators and the side parallel to the main transmission line. The resonant structure of the reconfigurable antenna shown in fig. 5b includes multiple groups of resonators (in this embodiment, one group), each group of resonators is composed of two vertically arranged strip-shaped resonators, and the switch of each group of resonators is arranged in the intersection region of two strip-shaped resonators.
As shown in fig. 6, the top electrode 7 and the bottom electrode 9 of the switch shown in fig. 5b are arranged vertically, and the dielectric layer 8 is located between the top electrode 7 and the bottom electrode 9.
When the RRAM switch between the two resonator gaps is in a high impedance state HRS, the resistance value is very high and is approximate to an open circuit, and the resonance structure is divided into two parts to respectively play a resonance role; when the RRAM switch is in a low-resistance state LRS, the resistance value is very low and is approximately conducted, the resonance structures are mutually influenced, the surface current distribution is changed, and the resonance frequency is shifted, so that the frequency reconfiguration is realized.
Example 2
The embodiment discloses a method for manufacturing a reconfigurable antenna, as shown in fig. 7, including the following steps:
s01), coating a mask material on the substrate plate without a metal part by using an electrofluid jet printer, and manufacturing a main transmission line and a resonant structure which are made of metal materials by using a thermal vacuum evaporation technology;
s02), controlling the position and the area of the switch by using a mask plate, and manufacturing a bottom electrode of the two-end type resistance-type memory made of a metal material at the position of the switch by using a thermal vacuum evaporation technology;
s03), manufacturing a dielectric layer on the bottom electrode by using a vacuum magnetic sputtering technology, after sputtering is finished, controlling a top electrode area by using a mask plate, and manufacturing a top electrode structure made of a metal material in the top electrode area by using a thermal vacuum evaporation technology;
in the process, the bottom electrode and the top electrode are both connected with the resonance structure to ensure the conductive property;
s04), leading out leads from the leading-out points of the top electrode and the bottom electrode to the feed port respectively, and after packaging, realizing the state switching of the reconfigurable antenna through the voltage control of the feed port.
Specifically, after the thermal evaporation in step S01 and step S02 is completed, the mask material is removed by ultrasonic cleaning.
In this embodiment, the substrate board is a rigid substrate (e.g., Si) or a flexible substrate (e.g., PET, PI).
In the embodiment, the main transmission line and the resonance structure are made of AL, the bottom electrode is made of Cu and has a thickness of 100nm, the dielectric layer is made of HfZrO, the sputtering time is 2h, and the thickness is 70 nm; the top electrode is made of Ag and has a thickness of 100 nm.
The preparation process adopts the thermal vacuum evaporation and vacuum magnetic sputtering technology, and the whole manufacturing structure is flexible.
In order to ensure the conductive characteristic, the present embodiment directly evaporates the bottom electrode on a part of the AL resonance structure, and requires the top electrode to have a connection portion with the AL resonance structure.
The wires leading from the top and bottom electrodes are required to be very thin, particularly so as to have a negligible effect on the radiation characteristics of the overall antenna.
In order to verify the technical effect of the reconfigurable antenna, the present embodiment performs a simulation experiment.
A simulation environment is built in a commercial simulation software HFSS environment, and comprises an air box (providing boundary conditions), a wave port (providing a radiation source), a dielectric substrate, a grounding plate, a main transmission line and a resonance structure.
The action mechanism of the RRAM switch is approximated, and the growth and the fracture of the metal filament before and after the direct current voltage is applied to the RRAM resistance change layer are simulated through the change of the metal length of the switch part.
And simulating the first structure, and simulating the on-off of the switch by changing the length of the switch structure in the horizontal direction. An air gap exists between the two L resonant bodies when the metal structure is 0.48mm, and the metal structure is in a switch-off state, and the two L resonant bodies are directly connected when the metal structure is 0.5mm and are in a switch-on state. A surface current distribution diagram of the metal structure in the overlooking direction and a resonance curve of the wave port I providing source and the wave port II testing resonance intensity are obtained under the open and closed conditions of the switch respectively, as shown in fig. 8. Under the condition that the RRAM switch is opened and closed, the surface current distribution is obviously different, the frequency resonance point is shifted, and the resonance point which is obviously changed is changed from 4.35G under the switch opening state to 2.62G under the switch closing state.
And simulating the structure II, and simulating the on-off of the switch by changing the height of the switch structure in the vertical direction. The metal structure is in a switch open state at 8 μm and in a switch closed state at 1 μm. A surface current distribution diagram of the metal structure in the overlooking direction and a resonance curve of the wave port I providing source and the wave port II testing resonance intensity are obtained under the open and closed conditions of the switch respectively, as shown in fig. 9. When the RRAM switch is opened and closed, the surface current distribution is obviously different, and the position and the intensity of a frequency resonance point are greatly changed, for example, the position of the resonance point at 4.4G in the opening state of the switch is changed into the position of the resonance point at 6.1G and the position of the resonance point at-51 DB.
The simulation results show that the switching device switched on and off through the RRAM conductive filament has effective effect on the change of the resonant point of the frequency reconfigurable antenna.
The foregoing description is only for the basic principle and the preferred embodiments of the present invention, and modifications and substitutions by those skilled in the art are included in the scope of the present invention.

Claims (10)

1. A reconfigurable antenna comprises a base plate, a main transmission line arranged on the base plate, a resonant structure and a change-over switch, wherein the change-over switch is connected between the resonant structures, and is characterized in that: the switch is a two-end resistive memory, and the high-low resistance state of the two-end resistive memory is changed by applying voltage, so that the current path of the antenna is changed, and the reconfigurable characteristic of the antenna is realized.
2. The reconfigurable antenna of claim 1, wherein: according to the antenna structure form, the two-end type resistive memories are connected between the resonance structures, the two-end type resistive memories form a switch array, two ends of the two-end type resistive memories are connected with conducting wires for controlling the switch state, the conducting wires at two ends of all the two-end type resistive memories are led out to the feeder line port, and after packaging, state switching of the reconfigurable antenna is achieved through voltage control of the feeder line port.
3. The reconfigurable antenna of claim 1, wherein: the two-end resistive memory comprises a top electrode, a dielectric layer and a bottom electrode which are arranged in a layered mode, and when the voltage of the top electrode is higher than that of the bottom electrode, the process from disconnection to connection of the two-end resistive memory is achieved; when the voltage of the bottom electrode is higher than that of the top electrode, the process from the connection to the disconnection of the two-end resistive memory is realized.
4. The reconfigurable antenna of claim 2, wherein: switch array implementation 2 by n two-terminal resistive memoriesnAnd (4) seed states, wherein n is a positive integer, and each state is coded to form a programmable array.
5. The reconfigurable antenna of claim 1, wherein: the resonant structure comprises a plurality of L-shaped resonators arranged in parallel relative to the main transmission line, and the switch is arranged between two adjacent L-shaped resonators and the parallel edge of the main transmission line.
6. The reconfigurable antenna of claim 1, wherein: the resonance structure comprises a plurality of groups of resonance bodies, each group of resonance bodies is composed of two vertically arranged bar-shaped resonance bodies, and the change-over switch of each group of resonance bodies is arranged in the cross area of the two bar-shaped resonance bodies.
7. A method for preparing a reconfigurable antenna is characterized by comprising the following steps: the method comprises the following steps:
s01), coating a mask material on the part where no metal is needed by using an electrofluid jet printer on the substrate plate, and manufacturing a main transmission line and a resonant structure which are made of metal materials by using a thermal vacuum evaporation technology;
s02), controlling the position of the change-over switch by using a mask plate, and manufacturing a bottom electrode of the two-end type resistance-type memory made of a metal material at the position of the change-over switch by using a thermal vacuum evaporation technology;
s03), manufacturing a dielectric layer on the bottom electrode by using a vacuum magnetic sputtering technology, after sputtering is finished, controlling a top electrode area by using a mask plate, and manufacturing a top electrode structure made of a metal material in the top electrode area by using a thermal vacuum evaporation technology;
in the process, the bottom electrode and the top electrode are both connected with the resonance structure to ensure the conductive property;
s04), leading out leads from the leading-out points of the top electrode and the bottom electrode to the feed port respectively, and after packaging, realizing the state switching of the reconfigurable antenna through the voltage control of the feed port.
8. The method for preparing the reconfigurable antenna according to claim 7, wherein: after the thermal evaporation in step S01 and step S02 is completed, the mask material is removed by ultrasonic cleaning.
9. The method for preparing the reconfigurable antenna according to claim 7, wherein: the substrate board is a rigid substrate or a flexible substrate.
10. The method for preparing the reconfigurable antenna according to claim 7, wherein: the main transmission line and the resonance structure are made of AL, the bottom electrode is made of Cu and has the thickness of 100nm, the dielectric layer is made of HfZrO, the sputtering time is 2h, and the thickness is 70 nm; the top electrode is made of Ag and has a thickness of 100 nm.
CN202110814102.7A 2021-07-19 2021-07-19 Reconfigurable antenna and preparation method thereof Pending CN113555687A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110814102.7A CN113555687A (en) 2021-07-19 2021-07-19 Reconfigurable antenna and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110814102.7A CN113555687A (en) 2021-07-19 2021-07-19 Reconfigurable antenna and preparation method thereof

Publications (1)

Publication Number Publication Date
CN113555687A true CN113555687A (en) 2021-10-26

Family

ID=78132110

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110814102.7A Pending CN113555687A (en) 2021-07-19 2021-07-19 Reconfigurable antenna and preparation method thereof

Country Status (1)

Country Link
CN (1) CN113555687A (en)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090207091A1 (en) * 2005-07-26 2009-08-20 Dimitrios Anagnostou Reconfigurable multifrequency antenna with rf-mems switches
US20100060544A1 (en) * 2008-09-05 2010-03-11 Rayspan Corporation Frequency-Tunable Metamaterial Antenna Apparatus
US20120319918A1 (en) * 2009-10-27 2012-12-20 Prasadh Ramachandran Antenna matching apparatus and methods
CN104321929A (en) * 2012-06-27 2015-01-28 英特尔公司 Time-variant antenna enabled by switch capacitor array on silicon
CN109904614A (en) * 2019-01-22 2019-06-18 中国计量大学 A kind of reconfigurable antenna based on multi-ferroic material
CN110197945A (en) * 2019-05-07 2019-09-03 西安电子科技大学 Reconfigurable antenna oscillator and reconfigurable antenna based on liquid gallium-indium alloy
CN112216992A (en) * 2020-09-15 2021-01-12 南京航空航天大学 Two-way type frequency reconfigurable meander line antenna

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090207091A1 (en) * 2005-07-26 2009-08-20 Dimitrios Anagnostou Reconfigurable multifrequency antenna with rf-mems switches
US20100060544A1 (en) * 2008-09-05 2010-03-11 Rayspan Corporation Frequency-Tunable Metamaterial Antenna Apparatus
US20120319918A1 (en) * 2009-10-27 2012-12-20 Prasadh Ramachandran Antenna matching apparatus and methods
CN104321929A (en) * 2012-06-27 2015-01-28 英特尔公司 Time-variant antenna enabled by switch capacitor array on silicon
CN109904614A (en) * 2019-01-22 2019-06-18 中国计量大学 A kind of reconfigurable antenna based on multi-ferroic material
CN110197945A (en) * 2019-05-07 2019-09-03 西安电子科技大学 Reconfigurable antenna oscillator and reconfigurable antenna based on liquid gallium-indium alloy
CN112216992A (en) * 2020-09-15 2021-01-12 南京航空航天大学 Two-way type frequency reconfigurable meander line antenna

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
M.P. JAYAKRISHNAN 等: "Electronically Reconfigurable Dipole Antenna Using Integrated Passive Non-Volatile Solid-State Metal-Insulator-Metal Switches", 《2019 IEEE INTERNATIONAL SYMPOSIUM ON ANTENNAS AND PROPAGATION AND USNC-URSI RADIO SCIENCE MEETING》 *
NICOLÁS WAINSTEIN等: "Radiofrequency Switches Based on Emerging Resistive Memory Technologies - A Survey", 《PROCEEDINGS OF THE IEEE》 *
黄成远等: "RF MEMS开关的研究进展及其应用", 《微纳电子技术》 *

Similar Documents

Publication Publication Date Title
US8125393B2 (en) Reconfigurable electromagnetic antenna
WO2015163972A9 (en) A reconfigurable electromagnetic surface of pixelated metal patches
US10903568B2 (en) Electrochromic reflectarray antenna
CN110875286B (en) Device comprising first and second layers of conductive material and method of manufacturing and operating the device
US20030030519A1 (en) Phase change switches and circuits coupling to electromagnetic waves containing phase change switches
CN112567397A (en) Method for annealing qubits using an antenna chip
JP2006148929A (en) Apparatus for reflecting electromagnetic radiation
US9472834B2 (en) Radio frequency switch and processes of selectively regulating radio frequency energy transmission
Dragoman et al. Phased antenna arrays based on non‐volatile resistive switches
Vinoy et al. Design of reconfigurable fractal antennas and RF-MEMS for space-based systems
CN113555687A (en) Reconfigurable antenna and preparation method thereof
US6972427B2 (en) Switching device for reconfigurable interconnect and method for making the same
Rains et al. Practical Design Considerations for Reconfigurable Intelligent Surfaces
Bernhard Reconfigurable antennas and apertures: state of the art and future outlook
Perret et al. Realization of a conductive bridging RF switch integrated onto printed circuit board
Kumar et al. A review: Techniques and methodologies adopted for reconfigurable antennas
Cai et al. Evaluation of reconfigurable reflectarray antenna element at 19 GHz based on highly anisotropic liquid crystal material
Xu et al. Conductive bridging-based memristive RF switches on a silicon substrate
US10797108B2 (en) Printed reconfigurable electronic circuit
Casu et al. Shunt capacitive switches based on VO2 metal insulator transition for RF phase shifter applications
KR100308054B1 (en) micro switches and fabrication method of the same
Xiao et al. Non-Volatile RF Frequency Reconfigurable Antenna for Wireless Communication
JP6858825B2 (en) Direct flat-paste type active frequency-selective surface switch element and its manufacturing method
Tsipas et al. Novel materials and methods for fabricating memristors for use in RF applications
Jayakrishnan et al. Electronically Re-Writable Chipless RFID Tag Using Solid State Metal-Insulator-Metal Switches on Paper Substrate

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20211026