CN113555517A - Display substrate and display device - Google Patents

Abstract

The invention provides a display substrate and a display device, belongs to the technical field of display, and can solve the problems of color mixing, sensitivity reduction of an under-screen sensor and high emissivity of a COE structure caused by light reflection in the display substrate. The display substrate comprises a substrate, a plurality of light-emitting devices, a pixel limiting layer, an encapsulation layer, a reflecting layer and a light-absorbing material layer, wherein the light-emitting devices, the pixel limiting layer, the encapsulation layer, the reflecting layer and the light-absorbing material layer are arranged on the substrate; the pixel defining layer has a plurality of accommodating parts; each of the plurality of light emitting devices includes a first electrode layer, a light emitting layer, and a second electrode layer which are sequentially disposed on the base substrate and stacked; a first electrode layer of the light-emitting device is positioned on one side of the pixel defining layer close to the substrate base plate; the position of one accommodating part is arranged corresponding to one first electrode layer; the packaging layer is positioned on one side, away from the substrate, of the second electrode layer of the light-emitting device; the reflecting layer is arranged on one side of the packaging layer, which is far away from the substrate base plate, and is provided with a plurality of first openings.

Description

Display substrate and display device

Technical Field

The invention belongs to the technical field of display, and particularly relates to a display substrate and a display device.

Background

At present, the display screen of the display device is developing towards full screen and large screen, and the requirement for the integration level of electronic components inside the display panel is higher and higher. However, the existing display equipment has the problem that the display effect of the screen and the sensitivity of the sensor are affected by the reflection of light rays in the display substrate of the screen, so that the improvement of the internal structure of the display substrate becomes a necessary way for the development of full screen and large screen of the display screen.

Disclosure of Invention

The invention aims to improve the existing display substrate, solve the problem that light is reflected inside the display substrate in the prior art, and provide the display substrate and the display device.

In a first aspect, an embodiment of the present disclosure provides a display substrate, including: a substrate base plate on which a plurality of light emitting devices, a pixel defining layer, an encapsulation layer, and a reflective layer are disposed; the pixel defining layer has a plurality of accommodating parts; each of the plurality of light emitting devices comprises a first electrode layer, a light emitting layer and a second electrode layer which are sequentially arranged on the substrate base plate and are arranged in a laminated manner; the first electrode layer of the light-emitting device is positioned on one side, close to the substrate, of the pixel defining layer; the position of one accommodating part is arranged corresponding to one first electrode layer, and a luminescent layer of the light-emitting device is arranged in one accommodating part; the packaging layer is positioned on one side, away from the substrate, of the second electrode layer of the light-emitting device; the reflecting layer is arranged on one side, away from the substrate base plate, of the packaging layer and is provided with a plurality of first openings, and the orthographic projection of one first opening on the substrate base plate is positioned in the orthographic projection of one accommodating part on the substrate base plate; the display substrate further comprises a light absorbing material layer; the light absorption material layer is positioned on one side of the emitting layer close to the substrate base plate, and has a certain distance with the layer where the second electrode layer of the light-emitting device is positioned; wherein the light absorption material layer is provided with a plurality of second openings, and the orthographic projection of one second opening on the substrate base plate is positioned in the orthographic projection of one accommodating part on the substrate base plate; the orthographic projection of one first opening on the substrate base plate is positioned in the orthographic projection of one second opening on the substrate base plate.

The packaging layer comprises a first inorganic packaging layer, an organic packaging layer and a second inorganic packaging layer which are sequentially arranged along one side departing from the substrate base plate; the light absorbing material layer is positioned between the organic packaging layer and the first inorganic packaging layer or between the organic packaging layer and the second inorganic packaging layer or between the second inorganic packaging layer and the reflecting layer.

Wherein the light absorbing material layer includes any one of a light absorbing resin layer, a metal material layer, or an index matching layer.

Wherein a thickness of the light absorbing material layer comprises 1 μm to 2 μm.

Wherein a ratio of a width of the first opening to a width of the second opening is not less than 1.

Wherein the difference between the width of the first opening and the width of the second opening is not less than 1 μm and not more than 5 μm.

Wherein the reflective layer comprises a specularly reflective layer.

And a touch layer is also arranged on one side of the reflecting layer, which is far away from the substrate base plate.

The reflecting layer comprises a touch signal line; and a touch layer is arranged on one side of the layer where the touch signal lines are located, which is far away from the substrate base plate.

Forming a color filter layer on one side of the touch layer, which is far away from the substrate base plate; the color filter layer comprises a plurality of color filters and a black matrix arranged between the color filters which are adjacently arranged; one color filter is arranged corresponding to one light-emitting device; the orthographic projection of the black matrix on the substrate base plate covers the orthographic projection of the touch line on the substrate base plate.

Wherein, each black matrix is connected into an integral structure to form a black matrix layer; the black matrix layer limits a plurality of third openings by the black matrix, and the orthographic projection of one second opening on the substrate base plate is positioned in the orthographic projection of one third opening on the substrate base plate.

Wherein a distance between an orthographic projection of one of the second openings on the substrate base plate and an orthographic projection of one of the third openings on the substrate base plate is not less than 1 μm.

In a second aspect, an embodiment of the disclosure provides a display device, which includes any one of the display substrates described above.

Drawings

Fig. 1 is a schematic plan view of a display panel according to an embodiment of the disclosure;

fig. 2 is a schematic circuit structure diagram of a flexible display panel according to an embodiment of the disclosure;

FIG. 3 is a cross-sectional structure at the location of a light emitting device of an embodiment of the present disclosure;

FIG. 4 is a schematic diagram of an OLED mirror display substrate according to an embodiment of the present disclosure;

FIG. 5 is a block diagram of another OLED mirror display substrate according to an embodiment of the present disclosure;

FIG. 6 is a schematic diagram of a further embodiment of an LED mirror display substrate according to the disclosure;

FIG. 7 is a block diagram of an OLED display substrate according to an embodiment of the present disclosure;

FIG. 8 is a block diagram of another OLED display substrate according to an embodiment of the present disclosure;

FIG. 9 is a block diagram of yet another OLED display substrate according to an embodiment of the present disclosure;

fig. 10 is a structural diagram of a display substrate including a color film according to an embodiment of the disclosure;

fig. 11 is a structural diagram of a display substrate of another color filter according to an embodiment of the disclosure.

Wherein the reference numerals are: 0. a light absorbing material layer; 1. a light emitting device; 101. a first electrode; 102. a light emitting layer; 103. a second electrode; 2. a packaging layer; 201. a first inorganic encapsulation layer; 202. an organic encapsulation layer; 203. a second inorganic encapsulation layer; 3. a thin film transistor; 301. a source electrode; 302. an active layer; 303. a gate electrode; 304. a drain electrode; 401. a substrate base plate; 402. a buffer layer; 403. a planarization layer; 404. a pixel defining layer; 405. other module layers; 5. a gate insulating layer; 501. a first gate insulating layer; 502. a second gate insulating layer; 6. a reflective layer; 601. a mirror layer; 602. a touch signal line; 7. a touch layer; 8. a color filter layer; 801. and a black matrix layer.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present disclosure more apparent, the technical solutions of the embodiments of the present disclosure will be described clearly and completely with reference to the drawings of the embodiments of the present disclosure. It is to be understood that the described embodiments are only a few embodiments of the present disclosure, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the disclosure without any inventive step, are within the scope of protection of the disclosure.

Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The use of "first," "second," and similar terms in this disclosure is not intended to indicate any order, quantity, or importance, but rather is used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.

The following describes in detail specific embodiments of a display substrate and a display device provided in the disclosed embodiments with reference to the drawings.

Fig. 1 is a schematic plan view of a display panel according to an embodiment of the disclosure; as shown in fig. 1, the display panel includes a substrate base plate 401, and a plurality of pixel units 0 formed on the substrate base plate 401, each pixel unit 0 having one pixel driving circuit and one OLED device disposed therein. The pixel driving circuit may include a 7T1C (i.e., seven transistors and one capacitor) structure including, for example, a driving transistor, a data writing transistor, a storage capacitor, a threshold compensating transistor, a first reset transistor, a second reset transistor, a first light emission controlling transistor, and a second light emission controlling transistor. Fig. 2 is a schematic circuit structure diagram of a flexible display panel according to an embodiment of the disclosure; referring to fig. 2, the source 301 of the data writing transistor T4 is electrically connected to the source 301 of the driving transistor T3, the drain 304 of the data writing transistor T4 is configured to be electrically connected to the data line Vd to receive a data signal, and the gate 303 of the data writing transistor T4 is configured to be electrically connected to the first scanning signal line Ga1 to receive a scanning signal; a first plate CC1 of the storage capacitor Cst is electrically connected to the first power voltage terminal VDD, and a second plate CC2 of the storage capacitor Cst is electrically connected to the gate 303 of the driving transistor T3; the source 301 of the threshold compensation transistor T2 is electrically connected to the drain 304 of the driving transistor T3, the drain 304 of the threshold compensation transistor T2 is electrically connected to the gate 303 of the driving transistor T3, and the gate 303 of the threshold compensation transistor T2 is configured to be electrically connected to the second scanning signal line Ga2 to receive a compensation control signal; the source 301 of the first reset transistor T1 is configured to be electrically connected to a first reset power source terminal Vinit1 to receive a first reset signal, the drain 304 of the first reset transistor T1 is electrically connected to the gate 303 of the driving transistor T3, and the gate 303 of the first reset transistor T1 is configured to be electrically connected to a first reset control signal line Rst1 to receive a first sub-reset control signal; the source 301 of the second reset transistor T7 is configured to be electrically connected to the first reset power source terminal Vinit1 to receive the first reset signal, the drain 304 of the second reset transistor T7 is electrically connected to the first electrode 101 of the light emitting device 1, and the gate 303 of the second reset transistor T7 is configured to be electrically connected to the second reset control signal line Rst2 to receive the second sub-reset control signal; a source 301 of the first light emission controlling transistor T5 is electrically connected to the first power voltage terminal VDD, a drain 304 of the first light emission controlling transistor T5 is electrically connected to the source 301 of the driving transistor T3, and a gate 303 of the first light emission controlling transistor T5 is configured to be electrically connected to the first light emission controlling signal line EM1 to receive the first light emission controlling signal; the source 301 of the second light emission controlling transistor T6 is electrically connected to the drain 304 of the driving transistor T3, the drain 304 of the second light emission controlling transistor T6 is electrically connected to the first electrode 101 of the light emitting device 1, and the gate 303 of the second light emission controlling transistor T6 is configured to be electrically connected to the second light emission control signal line EM2 to receive a second light emission control signal; the second electrode 103 of the light emitting device 1 is electrically connected to a second power supply voltage terminal VSS.

Fig. 3 is a cross-sectional structure at the position of the light emitting device 1 of the embodiment of the present disclosure; as shown in fig. 3, a driving circuit layer may be formed on the base substrate 401. For example, as shown in fig. 3, the driving circuit layer may be formed on the buffer layer 402. The driving circuit layer may include an interlayer dielectric layer 406 located in the display device 1 and the transition region 10c, and the interlayer dielectric layer 406 is made of an inorganic material, for example: silicon oxide, silicon nitride and other inorganic materials to reach the effect of blocking water, oxygen and alkali ions.

As shown in fig. 3, the thin film transistor 3 may be a top gate type, and the thin film transistor 3 may include an active layer 104, a first gate insulating layer 501, a gate electrode 303, a second gate insulating layer 502, an interlayer dielectric layer 403, a source electrode 301, and a drain electrode 304. Specifically, the active layer 302 may be formed on the buffer layer 402, the first gate insulating layer 501 covers the buffer layer 402 and the active layer 302, the gate electrode 303 is formed on a side of the first gate insulating layer 501 away from the active layer 302, the second gate insulating layer 502 covers the gate electrode 303 and the first gate insulating layer 501, the interlayer dielectric layer 406 covers the second gate insulating layer 502, the source electrode 301 and the drain electrode 304 are formed on a side of the interlayer dielectric layer 406 away from the substrate 401 and located on two opposite sides of the gate electrode 303, respectively, and the source electrode 301 and the drain electrode 304 may contact two opposite sides of the active layer 302 through a via (e.g., a metal via), respectively. It should be understood that this thin film transistor 3 may also be of a bottom gate type.

As shown in fig. 3, the capacitor structure may include a first plate 130 and a second plate 131, the first plate 130 is disposed on the same layer as the gate 303, and the second plate 131 is disposed between the second gate insulating layer 502 and the interlayer dielectric layer 406 and opposite to the first plate 130.

As shown in fig. 3, a display device is located in the display region, and the display device may include a first electrode 101 and a pixel defining layer 404 sequentially formed on an interlayer dielectric layer 406, and it is understood that the display device may further include a light emitting layer 102 and a second electrode 103.

In detail, when the thin film transistor 3 is of a top gate type, the planarization layer 403 may be formed before the display device is manufactured, and the planarization layer 403 may have a single-layer structure or a multi-layer structure; the planarization layer 403 is typically made of organic materials, such as: materials such as photoresists, acrylic-based polymers, silicon-based polymers, and the like; as shown in fig. 3, the planarization layer 403 is formed between the interlayer dielectric layer 103 and the first electrode 101. The first electrode 101 may be electrically connected to the drain 304 through a metal via, and the first electrode 101 may be an anode made of ITO (indium tin oxide), Indium Zinc Oxide (IZO), zinc oxide (ZnO), or other materials; the pixel defining layer 404 may cover the planarization layer 403, and the pixel defining layer 404 may be made of an organic material, for example: an organic material such as photoresist, and the pixel defining layer 404 may have a pixel opening exposing the first electrode 101; a light emitting layer 102 is positioned in the pixel opening and formed on the first electrode 101, the light emitting layer 102 may include a small molecule organic material or a polymer molecule organic material, may be a fluorescent light emitting material or a phosphorescent light emitting material, may emit red light, green light, blue light, or may emit white light, etc.; moreover, according to different practical needs, in different examples, the light-emitting layer 102 may further include functional layers such as an electron injection layer, an electron transport layer, a hole injection layer, a hole transport layer, and the like; the second electrode 103 covers the light-emitting layer 102, and the polarity of the second electrode 103 is opposite to that of the first electrode 101; the second electrode 103 may be a cathode made of a metal material such as lithium (Li), aluminum (Al), magnesium (Mg), silver (Ag), etc.

Note that, as shown in fig. 3, the first electrode 101, the light-emitting layer 102, and the second electrode 103 may constitute one light-emitting device 1. Wherein the display device comprises a plurality of light emitting devices 1 arranged in an array. Note that the first electrodes 101 of the light emitting devices 1 are independent of each other, and the second electrodes 103 of the light emitting devices 1 are connected over the entire surfaces thereof; that is, the second electrode 103 is a full-surface structure provided on the display substrate, and is a common electrode for a plurality of display devices.

In a first aspect, an embodiment of the present disclosure provides a display substrate, which includes: a substrate base 401 on which a plurality of light emitting devices 1, a pixel defining layer 404, an encapsulation layer 2, and a reflective layer 6 are disposed; the pixel defining layer 404 has a plurality of accommodating portions; each of the plurality of light emitting devices 1 includes a first electrode 101 layer, a light emitting layer 102, and a second electrode 103 layer which are sequentially provided on the base substrate 401 and are stacked; the first electrode 101 layer of the light emitting device 1 is located on the side of the pixel defining layer 404 close to the base substrate 401; one accommodating portion is provided corresponding to one first electrode 101, and one accommodating portion is provided with one light emitting layer 102 of the light emitting device 1; the encapsulation layer 2 is positioned on the side of the second electrode 103 of the light-emitting device 1, which is far away from the substrate 401; the reflecting layer 6 is arranged on the side of the packaging layer 2 away from the substrate base 401 and has a plurality of first openings, and the orthographic projection of one first opening on the substrate base 401 is positioned in the orthographic projection of one accommodating part on the substrate base 401; in particular, the display substrate in the embodiments of the present disclosure further includes a light absorbing material layer; the light absorption material layer 0 is positioned on one side of the emitting layer close to the substrate base plate 401, and has a certain distance with the layer where the second electrode 103 of the light-emitting device 1 is positioned; wherein, the light absorbing material layer 0 has a plurality of second openings, and an orthogonal projection of one second opening on the substrate base plate 401 is located in an orthogonal projection of one accommodating part on the substrate base plate 401; the orthographic projection of one first opening on the substrate base 401 is located within the orthographic projection of one second opening on the substrate base 401.

Since the light absorbing material layer 0 is additionally arranged in the display substrate of the embodiment of the present disclosure, light reflected by the emitting layer can be absorbed by the light absorbing material, so that the problem of crosstalk of light emitted by adjacent light emitting devices 1 is avoided.

In some examples, the encapsulation layer 2 in the embodiments of the present disclosure includes a first inorganic encapsulation layer 201, an organic encapsulation layer 202, and a second inorganic encapsulation layer 203, which are sequentially stacked and disposed on a side of the second electrode 103 layer facing away from the substrate 401. The first inorganic encapsulation layer 201 and the second inorganic encapsulation layer 203 are formed by deposition, and the organic encapsulation layer 202 is formed by inkjet printing.

In some examples, the encapsulation layer 2 in the embodiments of the present disclosure has a property of reflecting light, and when the light emitted from the light emitting layer 102 irradiates the encapsulation layer 2, a reflection phenomenon of the light inside the display substrate may occur, which may cause a problem of screen color mixing.

In some examples, the light absorbing material layer 0 in embodiments of the present disclosure is disposed at any one of the following positions: between the first inorganic encapsulation layer 201 and the organic encapsulation layer 202; between the organic encapsulation layer 202 and the second inorganic encapsulation layer 203; between the second inorganic encapsulation layer 203 and the reflective layer 6. The three cases will be described in detail later with reference to the drawings, and thus will not be explained in detail herein.

In some examples, the display substrate may be applied in a mirror display, wherein the reflective layer 6 is a mirror reflective layer 6, the mirror reflective layer 6 comprising a mirror layer 601 arranged at a side facing away from the substrate 401. Specifically, when the reflective layer 6 in the display substrate is the specular reflective layer 6, the following description will be given with reference to a specific example.

The first example: FIG. 4 is a structural diagram of an OLED mirror display substrate; as shown in fig. 1, the OLED mirror display substrate includes a substrate 401 and a light absorbing material layer 0, a buffer layer 402 is disposed on the substrate 401, a plurality of thin film transistors 3 are disposed on a side of the buffer layer 402 away from the substrate 401, and each thin film transistor 3 includes an active layer 302, a gate 303 insulating layer 5, a source 301, and a drain 304 sequentially disposed on a side of the buffer layer 402 away from the substrate 401. The gate 303 insulating layer 5 includes a first gate insulating layer 501 and a first gate insulating layer 502. The second gate insulating layer 502 is provided with a planarization layer 403 on a side facing away from the substrate base 401, and a pixel defining layer 404 is provided on a side of the planarization layer 403 facing away from the substrate base 401, and the pixel defining layer 404 has a plurality of receiving portions. A plurality of light-emitting devices 1 are further arranged on the substrate base plate 401, the plurality of light-emitting devices 1 are arranged on the side of the flat layer 403 facing away from the substrate base plate 401, and each light-emitting device 1 comprises a first electrode 101, a light-emitting layer 102 and a second electrode 103 which are sequentially stacked on the side of the pixel defining layer 404 facing away from the substrate base plate 401; one of the receiving portions is positioned corresponding to the first electrode 101 of one of the light emitting devices 1, and one of the receiving portions is provided with the light emitting layer 102 of one of the light emitting devices 1. The side of the second electrode 103 facing away from the substrate 401 is provided with an encapsulation layer 2. The encapsulation layer 2 comprises a first inorganic encapsulation layer 201, an organic encapsulation layer 202 and a second inorganic encapsulation layer 203 which are sequentially stacked and arranged on the side, away from the substrate 401, of the second electrode 103 layer. The second inorganic encapsulation layer 203 is provided with a reflection layer 6 on the side away from the substrate base 401, the reflection layer 6 has a plurality of first openings, and the orthographic projection of one first opening on the substrate base 401 is located in the orthographic projection of one accommodating part on the substrate base 401. The reflective layer 6 comprises a mirror layer 601 arranged on the side of the second inorganic encapsulation layer 203 facing away from the substrate 401. The light absorbing material layer 0 has a plurality of second openings, and an orthogonal projection of one second opening on the substrate base 401 is located within an orthogonal projection of one accommodation portion on the substrate base 401. The light absorbing material layer 0 is disposed between the first inorganic encapsulation layer 201 and the organic encapsulation layer 202. In some examples, the light absorbing material layer 0 has a thickness of 1 μm to 2 μm, and the width of the second opening is not less than 1 μm and not more than 5 μm different from the width of the first opening. For example, the thickness of the light absorbing material layer 0 is 1 μm, and the difference between the width of the second opening and the width of the first opening is 1 μm.

The light absorption material layer 0 arranged between the first inorganic packaging layer 201 and the organic packaging layer 202 can absorb the reflected light generated after the light emitted by the light emitting layer 102 irradiates the packaging layer 2 and the reflecting layer 6, so that the phenomenon of crosstalk of the light emitted by the adjacent light emitting devices 1 is avoided, the color mixing problem is eliminated, the display contrast is improved, and the display color purity is increased. Setting the thickness of the light absorbing material layer 0 to 1 μm to 2 μm enables the reflection layer 6 to be kept flat while having strong light absorption; the difference between the width of the first opening and the width of the second opening is set to be not less than 1 μm and not more than 5 μm, and the first opening and the second opening do not affect the normal passing of the light emitted from the light emitting layer 102.

The second example is: FIG. 5 is a schematic diagram of an OLED mirror display substrate; the structure of the OLED mirror display substrate is identical to that of the OLED mirror display substrate provided in the first example except that the position where the light absorbing material layer 0 is disposed is different from that of the light absorbing material of the first example. As shown in fig. 5, the light absorbing material layer 0 is disposed between the organic encapsulation layer 202 and the second inorganic encapsulation layer 203. In some examples, the light absorbing material layer 0 has a thickness of 1 μm to 2 μm, and the width of the second opening is not less than 1 μm and not more than 3 μm different from the width of the first opening. For example, the thickness of the light absorbing material layer 0 is 1 μm, and the difference between the width of the second opening and the width of the first opening is 1 μm.

The light absorbing material layer 0 disposed between the organic encapsulation layer 2022 and the second inorganic encapsulation layer 2032 can absorb the reflected light generated after the light emitted from the light emitting layer 102 irradiates the encapsulation layer 2 and the reflection layer 6, so as to avoid crosstalk between the light emitted from the adjacent light emitting devices 1, thereby eliminating color mixing, improving display contrast, and increasing display color purity. Setting the thickness of the light absorbing material layer 0 to 1 μm to 2 μm enables the reflection layer 6 to be kept flat while having strong light absorption; the difference between the width of the first opening and the width of the second opening is set to be not less than 1 μm and not more than 3 μm, and the first opening and the second opening do not affect the normal passing of the light emitted from the light emitting layer 102.

The third example: FIG. 6 is a structural diagram of an OLED mirror display substrate; the structure of the OLED mirror display substrate is identical to that of the OLED mirror display substrate provided in the first example except that the position where the light absorbing material layer 0 is disposed is different from that of the light absorbing material of the first example. As shown in fig. 6, the light absorbing material layer 0 is disposed between the second inorganic encapsulation layer 203 and the reflective layer 6. In some examples the light absorbing material layer 0 has a thickness of 1 μm-2 μm, the width of the second opening is not less than 1 μm different from the width of the first opening and the ratio of the width of the second opening to the width of the first opening is not less than 1. For example, the thickness of the light absorbing material layer 0 is 1 μm, the difference between the width of the second opening and the width of the first opening is 1 μm, and the width ratio of the second opening to the first opening is 1.1

The light absorption material layer 0 arranged between the second inorganic packaging layer 203 and the reflecting layer 6 can absorb the reflected light generated after the light emitted by the light emitting layer 102 irradiates the packaging layer 2 and the reflecting layer 6, so that the phenomenon of crosstalk of the light emitted by the adjacent light emitting devices 1 is avoided, the problem of color mixing is solved, the display contrast is improved, and the display color purity is increased. Setting the thickness of the light absorbing material layer 0 to 1 μm to 2 μm enables the reflective layer 6 to maintain flatness while having strong light absorption; the difference between the width of the first opening and the width of the second opening is set to be not less than 1 μm, and the ratio of the width of the second opening to the width of the first opening is not less than 1, so that the first opening and the second opening do not affect the normal passing of the light emitted by the light-emitting layer 102.

In any of the above examples, the display substrate of the embodiment of the present disclosure may further include a touch layer disposed on a side of the reflective layer 6 away from the substrate 401, so as to implement a display substrate with a touch function.

In some examples, the reflective layer 6 of the embodiment of the present disclosure includes a touch signal line 602, and a touch layer is disposed on a side of the layer where the touch signal line 602 is located, the side being away from the substrate 401. The touch signal line 602 has a characteristic of reflecting light, and when the light emitted from the light emitting layer 102 irradiates the touch signal line 602, the light is reflected inside the display substrate, thereby causing a color mixing problem. For the problem that light rays are reflected inside the display substrate when the reflective layer 6 includes the touch signal line 602 but does not include the mirror layer 601, the specific structure of the display substrate in the embodiment of the present disclosure may include the following examples.

The first example: FIG. 7 is a diagram of a display substrate; as shown in fig. 7, the display substrate includes a substrate 401 and a light absorbing material layer 0, a buffer layer 402 is disposed on the substrate 401, a plurality of thin film transistors 3 are disposed on a side of the buffer layer 402 away from the substrate 401, and each thin film transistor 3 includes an active layer 302, a gate 303 insulating layer 5, a source 301, and a drain 304, which are sequentially disposed on the buffer layer 402 away from the substrate 401. The gate 303 insulating layer 5 includes a first gate insulating layer 501 and a first gate insulating layer 502. The second gate 3 insulating layer 502 is provided with a planarization layer 403 on a side facing away from the substrate base 401, and a pixel defining layer 404 is provided on a side of the planarization layer 403 facing away from the substrate base 401, and the pixel defining layer 404 has a plurality of receiving portions. A plurality of light-emitting devices 1 are further arranged on the substrate base plate 401, the plurality of light-emitting devices 1 are arranged on the side of the flat layer 403 facing away from the substrate base plate 401, and each light-emitting device 1 comprises a first electrode 101, a light-emitting layer 102 and a second electrode 103 which are sequentially stacked on the side of the pixel defining layer 404 facing away from the substrate base plate 401; one of the receiving portions is positioned corresponding to the first electrode 101 of one of the light emitting devices 1, and one of the receiving portions is provided with the light emitting layer 102 of one of the light emitting devices 1. The side of the second electrode 103 facing away from the substrate 401 is provided with an encapsulation layer 2. The encapsulation layer 2 comprises a first inorganic encapsulation layer 201, an organic encapsulation layer 202 and a second inorganic encapsulation layer 203 which are sequentially stacked and arranged on the side, away from the substrate 401, of the second electrode 103 layer. The second inorganic encapsulation layer 203 is provided with a reflection layer 6 on the side away from the substrate base 401, the reflection layer 6 has a plurality of first openings, and the orthographic projection of one first opening on the substrate base 401 is located in the orthographic projection of one accommodating part on the substrate base 401. The reflective layer 6 includes a touch signal line 602. The side of the reflective layer 6 away from the substrate 401 is provided with a touch layer. The light absorbing material layer 0 has a plurality of second openings, and an orthogonal projection of one second opening on the substrate base 401 is located within an orthogonal projection of one accommodation portion on the substrate base 401. In some examples, the light absorbing material layer 0 is disposed between the first inorganic encapsulation layer 201 and the organic encapsulation layer 202, a distance between adjacent second openings is not less than 2 μm, and a width of the second openings should be not less than 2 × tan40 ° μm different from a width of the receiving portion (thickness of the pixel defining layer 404 + thickness of the first inorganic encapsulation layer 201). For example, when the thickness of the pixel defining layer 404 is 1um, the thickness of the first inorganic encapsulation layer 201 is 1um, the distance between the adjacent second openings is 2 μm, and the difference between the width of the second openings and the width of the accommodating portion is 3.36 μm.

The light absorption material layer 0 arranged between the first inorganic packaging layer 201 and the organic packaging layer 202 can absorb the reflected light generated after the light emitted by the light emitting layer 102 irradiates the packaging layer 2 and the reflecting layer 6, so that the phenomenon of crosstalk of the light emitted by the adjacent light emitting devices 1 is avoided, the color mixing problem is eliminated, the display contrast is improved, and the display color purity is increased. The distance between adjacent second openings is set to be not less than 2 μm, and the difference between the width of the second openings and the width of the accommodating portion is set to be not less than 2 (the thickness of the pixel defining layer 404 + the thickness of the first inorganic encapsulating layer 201) × tan40 μm, so that the width of the light absorbing material layer 0 is sufficient to cover the reflected light passing region, and the first openings and the second openings do not affect the normal passing of the light emitted from the light emitting layer 102.

The second example is: FIG. 8 is a diagram of a display substrate; the display substrate structure is identical to that provided in the first example except that the position where the light absorbing material layer 0 is disposed is different from that of the light absorbing material of the first example. As shown in fig. 8, in some examples, the light absorbing material layer 0 is disposed between the organic encapsulation layer 202 and the second inorganic encapsulation layer 203, the distance between two adjacent second openings is not less than 2 μm, and the width of the second openings should be not less than 2 (the thickness of the pixel defining layer 404 + the thickness of the first inorganic encapsulation layer 201 + the thickness of the organic encapsulation layer 202) × tan40 ° μm from the width of the receiving portion. For example, when the thickness of the pixel defining layer 404 is 1um, the thickness of the first inorganic encapsulation layer 201 is 1um, the thickness of the organic encapsulation layer is 8um, the distance between adjacent second openings is 2 μm, and the difference between the width of the second openings and the width of the accommodating portion is 8.4 μm.

The light absorption material layer 0 arranged between the organic packaging layer 202 and the second inorganic packaging layer 203 can absorb the reflected light generated after the light emitted by the light emitting layer 102 irradiates the packaging layer 2 and the reflecting layer 6, so that the phenomenon of crosstalk of the light emitted by the adjacent light emitting devices 1 is avoided, the color mixing problem is eliminated, the display contrast is improved, and the display color purity is increased. The distance between adjacent second openings is set to be not less than 2 μm, and the difference between the width of the second openings and the width of the accommodating portion is set to be not less than 2 (the thickness of the pixel defining layer 404 + the thickness of the first inorganic encapsulating layer 201 + the thickness of the organic encapsulating layer 202) × tan40 μm, so that the width of the light absorbing material layer 0 can be made to be sufficient to cover the reflected light passing region, and the first openings and the second openings do not affect the normal passing of the light emitted from the light emitting layer 102.

The third example: FIG. 9 is a diagram of a display substrate; the display substrate structure is identical to that provided in the first example except that the position where the light absorbing material layer 0 is disposed is different from that of the light absorbing material of the first example. As shown in fig. 9, in some examples, the light absorbing material layer 0 is disposed between the second inorganic encapsulation layer 203 and the reflective layer 6, the distance between two adjacent second openings is not less than 2 μm, and the width of the second openings should be not less than 2 × different from the width of the receiving portion (the thickness of the pixel defining layer 404 + the thickness of the first inorganic encapsulation layer 201 + the thickness of the organic encapsulation layer 202 + the thickness of the second inorganic encapsulation layer 203)' tan40 ° μm. For example, when the thickness of the pixel defining layer 404 is 1um, the thickness of the first inorganic encapsulating layer 201 is 1um, the thickness of the organic encapsulating layer is 8um, the thickness of the second inorganic encapsulating layer 203 is 1um, the distance between the adjacent second openings is 2 μm, and the difference between the width of the second opening and the width of the accommodating portion is 9.23 μm.

The light absorption material layer 0 arranged between the second inorganic packaging layer 203 and the reflecting layer 6 can absorb the reflected light generated after the light emitted by the light emitting layer 102 irradiates the packaging layer 2 and the reflecting layer 6, so that the phenomenon of crosstalk of the light emitted by the adjacent light emitting devices 1 is avoided, the problem of color mixing is solved, the display contrast is improved, and the display color purity is increased. The distance between adjacent second openings is set to be not less than 2 μm, and the difference between the width of the second opening and the width of the accommodating portion is set to be not less than 2 (the thickness of the pixel defining layer 404 + the thickness of the first inorganic encapsulating layer 201 + the thickness of the organic encapsulating layer 202 + the second inorganic encapsulating layer 203) × tan40 μm, so that the width of the light absorbing material layer 0 can be made to sufficiently cover the reflected light passing region, and the first opening and the second opening do not affect the normal passing of the light emitted from the light emitting layer 102.

In some examples, the display substrate in the embodiments of the present disclosure further includes a color filter layer 8 disposed on a side of the touch layer facing away from the substrate 401; the color filter layer 8 includes a plurality of color filters and a black matrix disposed between the color filters disposed adjacently; a color filter is arranged corresponding to the light emitting device 1; the orthographic projection of the black matrix on the substrate 401 covers the orthographic projection of the touch signal line 602 on the substrate 401. The black matrixes are connected into an integral structure to form a black matrix layer 801; the black matrix layer 801 defines a plurality of third openings by the black matrix, and an orthogonal projection of one second opening on the substrate base 401 is located within an orthogonal projection of one third opening on the substrate base 401.

It should be noted that the edge of the third opening has a characteristic of reflecting light, and when the light emitted from the light emitting layer 102 is irradiated to the third opening, a reflection phenomenon of the light inside the touch substrate occurs, which causes a color mixing problem.

When the touch substrate includes the color filter layer 8, the specific structure of the display substrate in the embodiment of the present disclosure may include the following examples.

The first example: fig. 10 is a structural diagram of a display substrate including a color filter, as shown in fig. 10, the display substrate includes a substrate 401 and a light absorbing material layer 0, a buffer layer 402 is disposed on the substrate 401, a plurality of thin film transistors 3 are disposed on a side of the buffer layer 402 away from the substrate 401, and each thin film transistor 3 includes an active layer 302, a gate 303 insulating layer 5, a source 301, and a drain 304, which are sequentially disposed on the buffer layer 402 away from the substrate 401. The gate 303 insulating layer 5 includes a first gate insulating layer 501 and a first gate insulating layer 502. The second gate insulating layer 502 is provided with a planarization layer 403 on a side facing away from the substrate base 401, and a pixel defining layer 404 is provided on a side of the planarization layer 403 facing away from the substrate base 401, and the pixel defining layer 404 has a plurality of receiving portions. A plurality of light-emitting devices 1 are further arranged on the substrate base plate 401, the plurality of light-emitting devices 1 are arranged on the side of the flat layer 403 facing away from the substrate base plate 401, and each light-emitting device 1 comprises a first electrode 101, a light-emitting layer 102 and a second electrode 103 which are sequentially stacked on the side of the pixel defining layer 404 facing away from the substrate base plate 401; one of the receiving portions is positioned corresponding to the first electrode 101 of one of the light emitting devices 1, and one of the receiving portions is provided with the light emitting layer 102 of one of the light emitting devices 1. The side of the second electrode 103 facing away from the substrate 401 is provided with an encapsulation layer 2. The encapsulation layer 2 comprises a first inorganic encapsulation layer 201, an organic encapsulation layer 202 and a second inorganic encapsulation layer 203 which are sequentially stacked and arranged on the side, away from the substrate 401, of the second electrode 103 layer. The second inorganic encapsulation layer 203 is provided with a reflection layer 6 on the side away from the substrate base 401, the reflection layer 6 has a plurality of first openings, and the orthographic projection of one first opening on the substrate base 401 is located in the orthographic projection of one accommodating part on the substrate base 401. The reflective layer 6 includes a touch signal line 602. The side of the reflecting layer 6 away from the substrate 401 is provided with a touch layer, and the side of the touch layer away from the substrate 401 is provided with a color filter layer 8. The light absorbing material layer 0 has a plurality of second openings, and an orthogonal projection of one second opening on the substrate base 401 is located within an orthogonal projection of one accommodation portion on the substrate base 401. In some examples, the light absorbing material layer 0 is disposed between the first inorganic encapsulation layer 201 and the organic encapsulation layer 202, and the width of the second opening should be not less than 2 (thickness of the pixel defining layer 404 + thickness of the first inorganic encapsulation layer 201) tan40 ° μm different from the width of the receiving portion. The width of the third opening should be no less than 1 μm different from the width of the second opening. For example, when the thickness of the pixel defining layer 404 is 1um and the thickness of the first inorganic encapsulation layer 201 is 1um, the width of the second opening should be different from the width of the accommodating portion by 3.35 μm, and the width of the third opening should be different from the width of the second opening by 1 μm.

The light absorption material layer 0 arranged between the first inorganic packaging layer 201 and the reflecting layer 6 can absorb the reflected light generated after the light emitted by the light emitting layer 102 irradiates the edges of the packaging layer 2, the reflecting layer 6 and the third opening, so that the phenomenon of crosstalk of the light emitted by the adjacent light emitting devices 1 is avoided, the problem of color mixing is eliminated, the display contrast is improved, and the display color purity is increased. The width of the second opening should be set to be not less than 2 (the thickness of the pixel defining layer 404 + the thickness of the first inorganic encapsulation layer 201) tan40 μm different from the width of the accommodating portion. The difference between the width of the third opening and the width of the second opening is set to be not less than 1 μm, so that the width of the light absorbing material layer 0 is enough to cover the reflected light passing area, and the first opening, the second opening and the third opening do not affect the normal passing of the light emitted from the light emitting layer 102.

The second example is: fig. 11 is a structural diagram of a display substrate including a color filter, and the position of the light absorbing material layer 0 is different from the position of the light absorbing material of the first example. As shown in fig. 11, in some examples, the light absorbing material layer 0 is disposed between the organic encapsulation layer 202 and the second inorganic encapsulation layer 203, and the width of the second opening should be not less than 2 (the thickness of the pixel defining layer 404 + the thickness of the first inorganic encapsulation layer 201 + the thickness of the organic encapsulation layer 202) tan40 ° μm from the width of the receiving portion. The width of the third opening should be no less than 1 μm different from the width of the second opening. For example, when the thickness of the pixel defining layer 404 is 1um, the thickness of the first inorganic sealing layer 201 is 1um, and the thickness of the organic sealing layer is 8um, the width of the second opening should be 8.4 μm different from the width of the accommodating portion, and the width of the third opening should be 1 μm different from the width of the second opening.

The light absorption material layer 0 arranged between the first inorganic packaging layer 201 and the reflecting layer 6 can absorb the reflected light generated after the light emitted by the light emitting layer 102 irradiates the edges of the packaging layer 2, the reflecting layer 6 and the third opening, so that the phenomenon of crosstalk of the light emitted by the adjacent light emitting devices 1 is avoided, the problem of color mixing is eliminated, the display contrast is improved, and the display color purity is increased. The width of the second opening should be set to be not less than 2 (the thickness of the pixel defining layer 404 + the thickness of the first inorganic encapsulation layer 201 + the thickness of the organic encapsulation) tan40 μm different from the width of the receiving portion. The difference between the width of the third opening and the width of the second opening is set to be not less than 1 μm, so that the width of the light absorbing material layer 0 is enough to cover the reflected light passing area, and the first opening, the second opening and the third opening do not affect the normal passing of the light emitted from the light emitting layer 102.

In some examples, the planarization layer 403 in the embodiments of the present disclosure is used to planarize the thin film transistor 3, and the planarization layer 403 has a plurality of via holes disposed thereon.

In some examples, the plurality of light emitting devices 1 in the embodiments of the present disclosure include a first electrode 101, a light emitting layer 102, and a second electrode 103. The first electrode 101 is connected to the source 301 of the thin film transistor 3 through a via in the planarization layer 403.

In some examples, the source electrode 301 and the cathode electrode in the embodiments of the present disclosure each have a three-layer metal layer structure, for example, a titanium/aluminum/titanium, molybdenum/aluminum/molybdenum, titanium/copper/titanium, or molybdenum/copper/molybdenum three-layer metal layer structure.

In some examples, the source electrode 301 and the drain electrode 304 in the embodiments of the present disclosure are formed using at least one material of molybdenum, molybdenum-niobium alloy, aluminum-neodymium alloy, titanium, and copper, where molybdenum, molybdenum-niobium alloy, aluminum-neodymium alloy, or titanium is only weakly oxidized, aluminum is less easily oxidized, and copper is most easily oxidized. In view of resistivity, the gate electrode 3033, the source electrode 301, and the drain electrode 304 are preferably formed of copper.

In some examples, the first inorganic encapsulation layer 201 and the second inorganic encapsulation layer 203 in the embodiments of the present disclosure may be formed using an inorganic material such as silicon nitride, silicon oxide, and silicon oxynitride, and the organic encapsulation layer 202 may be formed using an organic material such as Polyimide (PI) and epoxy. Therefore, the first inorganic encapsulation layer 201, the organic encapsulation layer 202 and the second inorganic encapsulation layer 203 form the composite encapsulation layer 2, and the composite encapsulation layer 2 can form multiple protection for the functional structures of the plurality of light emitting devices 1 on the substrate base 401, thereby having better encapsulation effect.

In some examples, the first electrode 101 of the light emitting device 1 in the embodiments of the present disclosure is further provided with a sensor on a side close to the substrate base plate 401.

In some examples, the sensor in the embodiments of the present disclosure is applied to the fields of fingerprint recognition, an off-screen camera, an infrared probe, and the like. In some examples, the display substrate in the embodiments of the present disclosure further includes other module layers 405 disposed on a side of the touch layer facing away from the display substrate, and the other module layers 405 include, but are not limited to, a cover plate, and a conductive optical adhesive coating.

In a second aspect, embodiments of the present disclosure provide a display device including a display substrate provided by embodiments of the present disclosure. The display device may be: the display device comprises any product or component with a display function, such as a liquid crystal panel, electronic paper, an OLED panel, a mobile phone, a tablet personal computer, a television, a display, a notebook computer, a digital photo frame, a navigator and the like.

It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.

Claims (13)

1. A display substrate, comprising: a substrate base plate on which a plurality of light emitting devices, a pixel defining layer, an encapsulation layer, and a reflective layer are disposed; the pixel defining layer has a plurality of accommodating parts; each of the plurality of light emitting devices comprises a first electrode layer, a light emitting layer and a second electrode layer which are sequentially arranged on the substrate base plate and are arranged in a laminated manner; the first electrode layer of the light-emitting device is positioned on one side, close to the substrate, of the pixel defining layer; the position of one accommodating part is arranged corresponding to one first electrode layer, and a luminescent layer of the light-emitting device is arranged in one accommodating part; the packaging layer is positioned on one side, away from the substrate, of the second electrode layer of the light-emitting device; the reflecting layer is arranged on one side of the packaging layer, which is far away from the substrate base plate, and is provided with a plurality of first openings, and the orthographic projection of one first opening on the substrate base plate is positioned in the orthographic projection of one accommodating part on the substrate base plate; it is characterized in that the preparation method is characterized in that,

the display substrate further comprises a light absorbing material layer; the light absorption material layer is positioned on one side of the emitting layer close to the substrate base plate, and has a certain distance with the layer where the second electrode layer of the light-emitting device is positioned; wherein the light absorption material layer is provided with a plurality of second openings, and the orthographic projection of one second opening on the substrate base plate is positioned in the orthographic projection of one accommodating part on the substrate base plate; the orthographic projection of one first opening on the substrate base plate is positioned in the orthographic projection of one second opening on the substrate base plate.

2. The display substrate of claim 1, wherein the encapsulation layer comprises a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer disposed in that order along a side facing away from the substrate; the light absorbing material layer is positioned at any one of the following positions:

between the organic encapsulation layer and the first inorganic encapsulation layer;

between the organic encapsulation layer and the second inorganic encapsulation layer;

between the second inorganic encapsulation layer and the reflective layer.

3. The display substrate of claim 1, wherein the light absorbing material layer comprises any one of a light absorbing resin layer, a metallic material layer, or an index matching layer.

4. The display substrate of claim 1, wherein the light absorbing material layer has a thickness comprising 1 μ ι η to 2 μ ι η.

5. The display substrate according to claim 1, wherein a ratio of a width of the first opening to a width of the second opening is not less than 1.

6. The display substrate according to claim 5, wherein the width of the second opening is different from the width of the first opening by not less than 1 μm and not more than 5 μm.

7. The display substrate of any of claims 1-6, wherein the reflective layer comprises a specularly reflective layer.

8. The display substrate of claim 7, wherein a touch layer is further disposed on a side of the reflective layer facing away from the substrate.

9. The display substrate according to any one of claims 1 to 6, wherein the reflective layer comprises a touch signal line; and a touch layer is arranged on one side of the layer where the touch signal lines are located, which is far away from the substrate base plate.

10. The display substrate of claim 9, wherein a color filter layer is formed on a side of the touch layer facing away from the substrate; the color filter layer comprises a plurality of color filters and a black matrix arranged between the color filters which are adjacently arranged; one color filter is arranged corresponding to one light-emitting device; and the orthographic projection of the black matrix on the substrate covers the orthographic projection of the touch signal line on the substrate.

11. The display substrate of claim 10, wherein the black matrixes are connected into a whole to form a black matrix layer; the black matrix layer limits a plurality of third openings by the black matrix, and the orthographic projection of one second opening on the substrate base plate is positioned in the orthographic projection of one third opening on the substrate base plate.

12. The display substrate of claim 11, wherein a distance between an orthographic projection of one of the second openings on the substrate and an orthographic projection of one of the third openings on the substrate is not less than 1 μm.

13. A display device comprising the display substrate according to any one of claims 1 to 12.

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