CN113555263B - On-chip micro field-assisted thermal emission electron source and manufacturing method thereof - Google Patents
On-chip micro field-assisted thermal emission electron source and manufacturing method thereof Download PDFInfo
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- CN113555263B CN113555263B CN202010330997.2A CN202010330997A CN113555263B CN 113555263 B CN113555263 B CN 113555263B CN 202010330997 A CN202010330997 A CN 202010330997A CN 113555263 B CN113555263 B CN 113555263B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
- H01J3/02—Electron guns
- H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
- H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
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Abstract
According to the on-chip micro field-assisted thermal emission electron source and the manufacturing method thereof, the field enhancement electrode is integrated around the electron emitter in a short distance, the surface potential barrier of the electron emitter is reduced by introducing the strong electric field, the emission efficiency of the electron emitter is further improved, and the problems of high power consumption and difficulty in integration of a thermal electron source are solved.
Description
Technical Field
The present invention relates to the field of electronic devices, and more particularly, to an on-chip micro field-assisted thermal electron source and a method for fabricating the same.
Background
On-chip integrated miniature electron sources are an important component part of vacuum microelectronics. The micro-electron microscope has the advantages of small size, light weight, integration and the like, and has great potential in various application fields such as miniaturized x-ray sources, vacuum microelectronic integrated circuits, micro electron microscopes, miniaturized mass spectrometers, ion sources for electric propulsion and the like.
Over the past half century, research on-chip miniature electron sources has focused primarily on field emission electron sources.
In the end of the 20 th century and the 60 th era, the micromachining process in an integrated circuit is introduced into the field of vacuum electronics at a technological rate, and a film field emission electron source is successfully prepared. By the middle of the 80 s, it has become possible to integrate 10000 metal microtip-based field emission principles on a 1mm diameter wafer. In the beginning of the 21 st century, field emission electron sources based on nano material arrays have been developed rapidly, and in particular, novel functional materials such as carbon nanotubes and zinc oxide have gained great attention and research.
Due to the advantages of fast time response, good monochromaticity, easy integration, batch preparation and the like, the field emission electron source has been widely concerned and researched in recent decades. However, the problems of high operating voltage, high vacuum degree required for stable operation, poor array uniformity, etc. have not been solved so far, and the practical application of the field emission electron source is still greatly limited.
Based on the advantages of simple preparation process, low vacuum degree requirement, stable emission performance and the like, the thermionic source is still the most mainstream commercial electron source type at present, and is widely applied to vacuum devices such as a camera tube, an oscillograph tube, a microwave tube, a high-power emission tube and the like. Moreover, the thermal emission electron source has lower vacuum requirement than a field emission electron source, and can better adapt to the environment of the current totally-encapsulated microcavity with lower vacuum degree.
However, the conventional thermionic source is difficult to be miniaturized, and the power consumption of the thermionic source is large, and the existence of the heating device also makes the thermionic source more difficult to be miniaturized and integrated.
Disclosure of Invention
In view of this, in order to solve the above problems, the present invention provides an on-chip micro field-assisted thermal emission electron source and a manufacturing method thereof, and the technical scheme is as follows:
an on-chip miniature field assisted thermal emission electron source, said field assisted thermal emission electron source comprising:
the device comprises a substrate, a first groove and a second groove, wherein the first groove is formed in the substrate;
at least one set of electrode pairs disposed on the substrate;
an electron emitter is arranged between each group of the electrode pairs and is suspended above the first groove;
an insulating spacer layer disposed on the substrate, the insulating spacer layer covering the pair of electrodes and the electron emitter, the insulating spacer layer being provided with a second groove for exposing the electron emitter;
a field enhanced electrode disposed on the insulative spacer layer.
Preferably, in the above field-assisted thermal emission electron source, a projection of the field-enhanced electrode and a projection of the electrode pair do not overlap in a direction perpendicular to the substrate.
Preferably, in the field-assisted thermal emission electron source, the substrate is an aluminum oxide substrate or a silicon nitride substrate or a beryllium oxide substrate or a silicon carbide substrate or a boron nitride substrate or a diamond substrate;
or a silicon substrate covered with the following material films: silicon oxide or nitride or carbide or nitride or diamond.
Preferably, in the above field-assisted thermal emission electron source, the material of the electron emitter is one or more of carbon nanotube, graphene, lanthanum hexaboride, samarium hexaboride, tungsten, molybdenum, iridium, osmium, yttrium oxide, barium oxide, aluminum oxide, scandium oxide, or calcium oxide.
Preferably, in the above field-assisted thermal emission electron source, the insulating spacer layer is made of one or more of silicon oxide, aluminum oxide, glass or ceramic.
Preferably, in the above field-assisted thermal emission electron source, the field-enhanced electrodes are disposed on both sides of the second recess.
Preferably, in the above field-assisted thermal emission electron source, the field-assisted thermal emission electron source further comprises:
and the heat sink is arranged on one side of the substrate, which faces away from the insulating spacing layer.
Preferably, in the above field-assisted thermal emission electron source, the field-assisted thermal emission electron source further includes:
a thermally conductive adhesive layer disposed between the heat sink and the substrate.
A method of fabricating an on-chip miniature field-assisted thermal emission electron source, the method comprising:
providing a substrate;
forming at least one electron emitter at a predetermined position on the substrate;
forming at least one group of electrode pairs connected with the electron emitters on the substrate, wherein the number of the electrode pairs is the same as that of the electron emitters, and each group of the electrode pairs is correspondingly connected with one electron emitter;
forming an insulating spacer layer on the substrate;
forming a field enhancement electrode at a preset position of the insulating spacer layer;
etching the insulating spacing layer to form a second groove, wherein the second groove is used for exposing the electron emitter;
and etching the substrate through the second groove to form a first groove, wherein the electron emitter is suspended above the first groove.
Preferably, in the above manufacturing method, the method for etching the insulating spacer layer is wet etching or dry etching;
and the method for etching the substrate is wet etching or dry etching.
Compared with the prior art, the invention has the following beneficial effects:
according to the on-chip micro field-assisted thermal emission electron source, the field enhancement electrode is integrated around the electron emitter in a short distance, the surface potential barrier of the electron emitter is reduced by introducing the strong electric field, the emission efficiency of the electron emitter is further improved, and the problems of high power consumption and difficulty in integration of a thermal electron source are solved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the prior art descriptions will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a schematic cross-sectional view of an on-chip micro field-assisted thermal emission electron source according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a portion of an on-chip micro field-assisted thermal emission electron source according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of an on-chip micro field-assisted thermal emission electron source according to an embodiment of the present invention;
FIG. 4 is a schematic cross-sectional view of another on-chip micro field-assisted thermal emission electron source according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a portion of another on-chip micro field-assisted thermal emission electron source according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of another on-chip electron source with field-assisted thermal emission according to an embodiment of the present invention;
FIG. 7 is a schematic cross-sectional view of another on-chip micro field-assisted thermal emission electron source according to an embodiment of the present invention;
FIG. 8 is a schematic diagram of a portion of another on-chip micro field-assisted thermal emission electron source according to an embodiment of the present invention;
FIG. 9 is a schematic diagram of another on-chip micro field-assisted thermal emission electron source according to an embodiment of the present invention;
fig. 10 is a schematic flow chart of a method for manufacturing an on-chip micro field-assisted thermal emission electron source according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Referring to fig. 1-3, fig. 1 is a schematic cross-sectional view of an on-chip micro field-assisted thermal emission electron source according to an embodiment of the present invention, fig. 2 is a schematic structural view of a portion of an on-chip micro field-assisted thermal emission electron source according to an embodiment of the present invention, and fig. 3 is a schematic structural view of an on-chip micro field-assisted thermal emission electron source according to an embodiment of the present invention.
The on-chip micro field-assisted thermal emission electron source shown in fig. 1-3 only comprises one set of electrode pairs and one electron emitter.
Referring to fig. 4-6, fig. 4 is a schematic cross-sectional view of another on-chip miniature field-assisted thermal emission electron source provided by the embodiment of the present invention, fig. 5 is a schematic partial structure view of another on-chip miniature field-assisted thermal emission electron source provided by the embodiment of the present invention, and fig. 6 is a schematic structural view of another on-chip miniature field-assisted thermal emission electron source provided by the embodiment of the present invention.
The on-chip micro field-assisted thermal emission electron source shown in fig. 4-6 includes a plurality of sets of electrode pairs arranged in an array and a plurality of electron emitters.
The field assisted thermal emission electron source includes:
the device comprises a substrate 1, wherein a first groove 4 is formed in the substrate 1;
at least one set of electrode pairs 2 disposed on the substrate 1;
an electron emitter 3 is arranged between each group of the electrode pairs 2, and the electron emitter 3 is suspended above the first groove 4;
an insulating spacer layer 5 disposed on the substrate 1, wherein the insulating spacer layer 5 covers the electrode pair 2 and the electron emitter 3, a second groove 6 is disposed on the insulating spacer layer 5, and the second groove 6 is used for exposing the electron emitter 3;
and the field enhancement electrode 7 is arranged on the insulating spacing layer 5, and the field enhancement electrode 7 is distributed on two sides of the second groove 6.
In this embodiment, by providing the second groove, most of the electrons generated by the electron emitter can be transmitted to the outside, and the principle of thermionic emission of the device is as follows: the electron emitter is heated by joule effect by applying a voltage, typically a few volts, to the pair of electrodes, which causes electrons to be excited from the surface of the material of the electron emitter and to have sufficient kinetic energy to cross the surface barrier of the electron emitter into a vacuum.
And the field enhancement electrode is integrated around the electron emitter in a close-range manner, and the surface potential barrier of the electron emitter is reduced by introducing a strong electric field, so that the emission efficiency of the electron emitter is improved, the power consumption of the thermal electron source is reduced, and the large-scale on-chip integration of devices is facilitated.
That is, by applying a voltage to the field-enhanced electrode, a strong electric field can be induced around the electron emitter, reducing the surface potential barrier of the electron emitter, so that electrons in the electron emitter can tunnel from the potential barrier into a vacuum without acquiring a very large kinetic energy, thereby reducing the power of the field-assisted thermionic emission electron source.
Further, according to the above embodiment of the present invention, the projection of the field enhanced electrode 7 and the projection of the electrode pair 2 do not overlap in the direction perpendicular to the substrate 1.
In this embodiment, the projection of the field enhanced electrode 7 and the projection of the electrode pair 2 are made to be non-overlapping to a great extent in the direction perpendicular to the substrate, for preventing the problem that the insulating spacer layer 5 is broken down to leak electricity due to a high voltage.
It should be noted that, in an actual process, due to the precision of the manufacturing process or other factors, the projection of the field enhanced electrode 7 and the projection of the electrode pair 2 may partially overlap, and therefore, in a direction perpendicular to the substrate 1, the projection of the field enhanced electrode 7 and the projection of the electrode pair 2 do not overlap is a preferred embodiment of the present application, and the manufacturing precision is improved by improving the manufacturing process and avoiding the influence of other factors.
Further, according to the above embodiment of the present invention, the substrate 1 is an aluminum oxide substrate, a silicon nitride substrate, a beryllium oxide substrate, a silicon carbide substrate, a boron nitride substrate, or a diamond substrate.
In this embodiment, the substrate 1 includes, but is not limited to, an aluminum nitride substrate, a silicon nitride substrate, a beryllium oxide substrate, a silicon carbide substrate, a boron nitride substrate, a diamond substrate;
or a silicon substrate covered with the following material films: silicon oxide, silicon nitride, silicon carbide, aluminum nitride, and diamond.
Further, according to the above embodiment of the present invention, the material of the electron emitter 3 is carbon nanotube, graphene, lanthanum hexaboride, or samarium hexaboride.
In this embodiment, the material of the electron emitter 3 includes, but is not limited to, one or more of the following materials: carbon nano tubes, graphene, lanthanum hexaboride, samarium hexaboride, tungsten, molybdenum, iridium, osmium, yttrium oxide, barium oxide, aluminum oxide, scandium oxide and calcium oxide.
Further, according to the above embodiment of the present invention, the material of the insulating spacer layer 5 is silicon oxide or aluminum oxide.
In this embodiment, the material of the insulative spacer layer 5 includes, but is not limited to, one or more of the following materials: silica, alumina, glass, ceramics.
Referring to fig. 7-9, fig. 7 is a schematic cross-sectional view of another on-chip miniature field-assisted thermal emission electron source provided by the embodiment of the present invention, fig. 8 is a schematic partial structure view of another on-chip miniature field-assisted thermal emission electron source provided by the embodiment of the present invention, and fig. 9 is a schematic structural view of another on-chip miniature field-assisted thermal emission electron source provided by the embodiment of the present invention.
The field assisted thermal emission electron source further comprising:
a heat sink 8 arranged on the side of the substrate 1 facing away from the insulating spacer layer 5.
In this embodiment, by disposing the heat sink 8 on the side of the substrate 1 away from the insulating spacer 5, the heat generated by the on-chip micro field-assisted thermal emission electron source can be rapidly conducted away.
Further, in order to increase the effect of thermal contact between the substrate and the heat sink, the field assisted thermal emission electron source further comprises:
a thermally conductive adhesive layer disposed between the heat sink 8 and the substrate 1.
Based on all the above embodiments of the present invention, another embodiment of the present invention further provides a method for manufacturing an on-chip micro field-assisted thermal emission electron source, and referring to fig. 10, fig. 10 is a schematic flow chart of the method for manufacturing an on-chip micro field-assisted thermal emission electron source according to the embodiment of the present invention.
The manufacturing method comprises the following steps:
s101: a substrate is provided.
S102: at least one electron emitter is formed on a predetermined position of the substrate.
In this step, a thin film layer of material of the electron emitter may be grown on the surface of the substrate, or transferred to the surface of the substrate, and cut out to form the electron emitter of a specific shape and size on a predetermined position of the substrate.
S103: and forming at least one group of electrode pairs connected with the electron emitters on the substrate, wherein the number of the electrode pairs is the same as that of the electron emitters, and each group of the electrode pairs is correspondingly connected with one electron emitter.
In this step, a good electrical contact between the electron emitter and the electrode pair is required.
S104: an insulating spacer layer is formed on the substrate.
S105: and forming a field enhancement electrode at the preset position of the insulating spacing layer.
In the step, a field enhanced electrode with a specific shape and size is prepared at a preset position on the surface of the insulating spacing layer, and the projection of the field enhanced electrode and the projection of the electrode pair are not overlapped to a great extent in the direction vertical to the substrate, so that the problem that the insulating spacing layer is broken down and leaks electricity due to high voltage is prevented.
S106: and etching the insulating spacing layer to form a second groove, wherein the second groove is used for exposing the electron emitter.
In this step, the second groove is formed by wet etching, dry etching, laser drilling or mechanical drilling, but not limited thereto.
S107: and etching the substrate through the second groove to form a first groove, wherein the electron emitter is suspended above the first groove.
In this step, the first recess is formed by wet etching or dry etching, but not limited thereto.
The present invention provides an on-chip micro field-assisted thermal emission electron source and a method for making the same, wherein the principle and the implementation mode of the present invention are explained by applying specific examples, and the description of the examples is only used for helping to understand the method and the core idea of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
It should be noted that, in the present specification, the embodiments are all described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments may be referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
It is further noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include or include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrases "comprising a," "8230," "8230," or "comprising" does not exclude the presence of additional like elements in a process, method, article, or apparatus that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (9)
1. An on-chip miniature field-assisted thermal emission electron source, comprising:
the device comprises a substrate, a first groove and a second groove, wherein the first groove is formed in the substrate;
at least one set of electrode pairs disposed on the substrate;
an electron emitter is arranged between each group of the electrode pairs and suspended above the first groove;
an insulating spacer layer disposed on the substrate, the insulating spacer layer covering the pair of electrodes and the electron emitter, the insulating spacer layer being provided with a second groove for exposing the electron emitter;
a field enhancement electrode disposed on the insulative spacer layer, the field enhancement electrode integrated around the electron emitter for introducing an electric field around the electron emitter that reduces a surface barrier of the electron emitter;
in a direction perpendicular to the substrate, a projection of the field enhancing electrode and a projection of the electrode pair do not overlap.
2. The field assisted thermal emission electron source of claim 1, wherein the substrate is an aluminum oxide substrate or a silicon nitride substrate or a beryllium oxide substrate or a silicon carbide substrate or a boron nitride substrate or a diamond substrate;
or a silicon substrate covered with the following material films: silicon oxide or nitride or carbide or nitride or diamond.
3. The field assisted thermal emission electron source of claim 1, wherein the material of the electron emitter is one or more of carbon nanotubes or graphene or lanthanum hexaboride or samarium hexaboride or tungsten or molybdenum or iridium or osmium or yttrium oxide or barium oxide or aluminum oxide or scandium oxide or calcium oxide.
4. The field assisted thermionic emission electron source of claim 1 wherein the insulating spacer layer is one or more of silicon oxide or aluminum oxide or glass or ceramic.
5. The field assisted thermal emission electron source of claim 1, wherein the field enhanced electrodes are distributed on both sides of the second recess.
6. The field assisted thermal emission electron source of claim 1, further comprising:
and the heat sink is arranged on one side of the substrate, which faces away from the insulating spacing layer.
7. The field assisted thermal emission electron source of claim 6, further comprising:
a thermally conductive adhesive layer disposed between the heat sink and the substrate.
8. A method for manufacturing an on-chip miniature field-assisted thermal emission electron source, the method comprising:
providing a substrate;
forming at least one electron emitter on a predetermined position of the substrate;
forming at least one group of electrode pairs connected with the electron emitters on the substrate, wherein the number of the electrode pairs is the same as that of the electron emitters, and each group of the electrode pairs is correspondingly connected with one electron emitter;
forming an insulating spacer layer on the substrate;
forming a field enhancement electrode at a preset position of the insulating spacer layer, wherein the field enhancement electrode is integrated around the electron emitter and is used for introducing an electric field for reducing the surface potential barrier of the electron emitter around the electron emitter;
in a direction perpendicular to the substrate, a projection of the field enhancing electrode and a projection of the electrode pair do not overlap;
etching the insulating spacing layer to form a second groove, wherein the second groove is used for exposing the electron emitter;
and etching the substrate through the second groove to form a first groove, wherein the electron emitter is suspended above the first groove.
9. The manufacturing method of claim 8, wherein the method for etching the insulating spacer layer is wet etching or dry etching;
the method for etching the substrate is wet etching or dry etching.
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