CN113552423A - Method for evaluating influence of temperature on performance of magnetoelectric antenna - Google Patents

Method for evaluating influence of temperature on performance of magnetoelectric antenna Download PDF

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CN113552423A
CN113552423A CN202110838971.3A CN202110838971A CN113552423A CN 113552423 A CN113552423 A CN 113552423A CN 202110838971 A CN202110838971 A CN 202110838971A CN 113552423 A CN113552423 A CN 113552423A
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antenna
magnetoelectric
temperature
gain
resonant frequency
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CN113552423B (en
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李娜
李向阳
郑彬
田艳伟
王岩
包建强
张璐璐
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Xidian University
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Xidian University
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    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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Abstract

The invention provides a method for evaluating the influence of temperature on the performance of a magnetoelectric antenna, which comprises the following steps: connecting an evaluation system in a darkroom; measuring the S21 parameter of the reference horn antenna by using a vector network analyzer VNA; replacing a reference horn antenna with a magnetoelectric antenna, providing different environmental temperatures for the magnetoelectric antenna on a constant-temperature digital display heating table, and measuring S11 and S21 parameters of the magnetoelectric antenna at different temperature values through a vector network analyzer VNA; calculating the gain of the resonant frequency of the magnetoelectric antenna under different temperature values and normalizing; and finally, drawing a curve graph of the influence of the temperature on the performance of the magnetoelectric antenna. The invention aims to realize the analysis of the mechanism of the influence of temperature on the electrical property of the magnetoelectric antenna by evaluating the change of gain, resonant frequency and bandwidth of the magnetoelectric antenna along with the temperature.

Description

Method for evaluating influence of temperature on performance of magnetoelectric antenna
Technical Field
The invention belongs to the technical field of antenna testing, relates to an evaluation method for the influence of temperature on the performance of a magnetoelectric antenna, in particular to an evaluation method for the influence of temperature on the gain, the resonant frequency and the bandwidth of the magnetoelectric antenna, and can be used for guiding the analysis of the mechanism of the influence of the temperature of the magnetoelectric antenna on the electrical performance of the magnetoelectric antenna.
Background
Miniaturization of antennas is the focus of research in the antenna field at present and is one of the most challenging research fields. The conventional metal antenna is based on the oscillating current radiation, and can effectively radiate and receive the electromagnetic wave when the size of the antenna is equivalent to the wavelength of the electromagnetic wave. This principle of operation of metallic antennas essentially limits the miniaturization of the antenna. Therefore, the method has important theoretical and engineering significance for exploring a new mechanism for electromagnetic wave radiation and reception to effectively reduce the size of the antenna. The strain driving type mechanical antenna is composed of a piezoelectric material and a magnetostrictive material, under the action of time-varying excitation, the piezoelectric material and the magnetostrictive material can generate sound waves and electromagnetic waves which are coupled spontaneously, mutual conversion between mechanical energy and electromagnetic energy is realized, therefore, electromagnetic radiation can be generated by using mechanical vibration of the piezoelectric material and the magnetostrictive material, when the frequency of external excitation is the same as the intrinsic frequency of system vibration, sound wave resonance can be generated in the material, the size of the antenna is in the same order of magnitude as the wavelength of the sound waves, and the miniaturization of the antenna can be realized by using the principle. In view of the current research situation, strain-driven antennas are divided into two types: one is to adopt piezoelectric material, and directly generate electromagnetic radiation by utilizing the forward/reverse piezoelectric effect, namely a piezoelectric antenna; the other type of antenna adopts a piezoelectric material and a magnetostrictive material at the same time, receives and transmits electromagnetic waves by utilizing a positive/reverse magnetoelectric effect generated by two-phase compounding, and is called a magnetoelectric antenna.
The working principle of the magnetoelectric antenna is as follows: through voltage excitation, the piezoelectric film generates sound waves, and through strain transmission of a piezoelectric/ferromagnetic interface, time-varying magnetic current of the ferromagnetic film is triggered, so that radiation of electromagnetic waves is realized. On the contrary, the magnetoelectric antenna detects the magnetic field component of the electromagnetic wave, and the piezoelectric film can generate voltage output.
The magnetoelectric antenna is 1-2 orders of magnitude smaller than the traditional antenna under the same frequency, has very wide application prospect, and can be applied to implantable medical equipment, low-frequency communication, portable communication equipment and the like. The magnetoelectric antenna is different from a traditional antenna, and is similar to the traditional antenna in terms of antenna, and people mainly pay attention to performance indexes such as gain, bandwidth, directional diagram and the like. Because the magnetoelectric antenna is applied to different working scenes, the temperature of the magnetoelectric antenna is different, in order to ensure the reliability and the stability of the performance of the designed magnetoelectric antenna, researchers need to master the influence rule of the temperature on the gain, the bandwidth and the resonant frequency of the magnetoelectric antenna, and need to research the evaluation method of the influence of the temperature and the gain, the bandwidth and the resonant frequency of the magnetoelectric antenna. Through retrieval, the prior art for researching the influence of the temperature on the performance of the magnetoelectric antenna is not found.
Disclosure of Invention
The invention aims to overcome the defects in the prior art, provides an evaluation method for the influence of temperature on the performance of a magnetoelectric antenna, and aims to realize the analysis of the mechanism of the influence of the temperature on the electrical performance of the magnetoelectric antenna by evaluating the change of gain, resonant frequency and bandwidth of the magnetoelectric antenna along with the temperature.
In order to achieve the purpose, the technical scheme of the invention comprises the following steps:
(1) constructing an evaluation system:
the construction comprises a probe station, a vector network analyzer VNA, a constant temperature digital display heating station and a standard gain G which are distributed in a microwave darkroomRThe reference feedhorn and the receiving feedhorn evaluation system of (1);
(2) the S21 parameter of the reference feedhorn was measured by the vector network analyzer VNA:
placing a receiving horn antenna at a far-field position of a reference horn antenna, enabling horn mouths of the two horn antennas to be opposite, respectively connecting the reference horn antenna and the receiving horn antenna with a Port1 Port and a Port2 Port of a VNA (virtual network analyzer) through transmission lines, measuring S21 parameters of the reference horn antenna, and recording the S parameters as S21,R
(2) Acquiring the environmental temperature of the magnetoelectric antenna:
(2a) placing a magneto-electric antenna to be tested on a constant-temperature digital display heating table, removing a reference horn antenna connected with a Port1 Port of a VNA of a vector network analyzer, and connecting the magneto-electric antenna to be tested with a Port1 Port of the VNA through a GSG probe head;
(2b) the ambient temperature of the magnetoelectric antenna is obtained from the lowest value T through the control of the constant-temperature digital display heating tableLTo the maximum value THN temperature values T ═ T in the range1,T2,…,Tn,…,TNIn which T isL≥20℃,TH≤80℃,N≥2,TnRepresents an nth temperature value;
(3) the S11 and S21 parameters of the magneto-electric antenna at each temperature value are measured by a vector network analyzer VNA:
at each temperature value T by the vector network analyzer VNAnNext, the S11 parameter of the magnetoelectric antenna is measured, and an S11 parameter set S11 ═ S is obtained11,1,S11,2,…,S11,n,…,S11,NSimultaneously measuring S21 parameters of the magnetoelectric antenna to obtain an S21 parameter set S21 ═ S21,1,S21,2,…,S21,n,…,S21,NAnd storing S11 and S21, wherein S11,n、S21,nRespectively representing magneto-electric antennas at TnS11 parameter, S21 parameter;
(4) calculating the gain of the resonant frequency of the magnetoelectric antenna under each temperature value and normalizing:
(4a) using a comparison method and a magnetoelectric antenna to obtain each temperature value TnS of (1)21,nStandard gain G of reference horn antennaRAnd S21 parameter S21,RCalculating the gain G of the resonant frequency of the magnetoelectric antennanObtaining a gain set G ═ G of the resonant frequency1,G2,…,Gn,…,GNIn which GnIndicating magneto-electric antenna at TnGain of the resonant frequency of time;
(4b) to magneto-electric antenna at TnGain G of time resonant frequencynThe normalization is carried out, and the normalization is carried out,obtaining a normalized resonant frequency gain set G '═ G'1,G′2,…,G′n,…,G′NWherein, G'nRepresents GnNormalizing the result;
(5) drawing a curve graph of the influence of temperature on the performance of the magnetoelectric antenna:
from each temperature value T stored by the vector network analyzer VNAnThe S11 parameter of the lower magnetoelectric antenna is used for drawing each temperature value T of the magnetoelectric antennanCorresponding S11 parameter S11,nIs plotted, each temperature value T is plotted at the same timenNormalized resonant frequency gain G 'corresponding thereto'nGraph of the relationship of (c).
The invention has the advantages that:
the method comprises the steps of 1, firstly obtaining a plurality of environment temperature values of the magnetoelectric antenna, measuring S11 and S21 parameters of the magnetoelectric antenna under each temperature value through a vector network analyzer VNA, then calculating and normalizing the resonant frequency gain of the magnetoelectric antenna under each temperature value, and finally drawing each temperature value T of the magnetoelectric antennanCorresponding S11 parameter S11,nAnd each temperature value TnNormalized resonant frequency gain G 'corresponding thereto'nThe relationship curve chart realizes the evaluation of the performance of the magnetoelectric antenna along with the temperature change.
2, the evaluation system adopted by the invention has simple structure, economy and practicability, and accurate evaluation result, and is suitable for evaluating the performance of different types of magnetoelectric antennas along with the temperature change.
Drawings
FIG. 1 is a flow chart of an implementation of the present invention;
FIG. 2 is a three-dimensional view of a magnetoelectric antenna selected by the present invention;
FIG. 3 is a diagram of a system for measuring the S21 parameter of a reference feedhorn according to the present invention;
FIG. 4 is a system diagram for obtaining S11 and S21 parameters of a magneto-electric antenna at different ambient temperatures according to the present invention;
FIG. 5 is a graph plotting the effect of temperature on a magneto-electric antenna S11 parameter in accordance with the present invention;
fig. 6 is a graph plotting the effect of temperature on the normalized gain of a magnetoelectric antenna according to the present invention.
Detailed Description
The invention is described in further detail below with reference to the figures and specific examples.
Referring to fig. 1, the present invention includes the steps of:
step 1) constructing an evaluation system:
the construction comprises a probe station, a vector network analyzer VNA, a constant temperature digital display heating station and a standard gain G which are distributed in a microwave darkroomRThe reference feedhorn and the receiving feedhorn evaluation system of (1);
the microwave darkroom is a room which is electromagnetically shielded with the outside and has no reflection inside, can simulate a non-reflection free space, and can reduce various stray reflections and external interference to the minimum; in order to reduce the interference of the external electromagnetic signal, this embodiment is performed in a darkroom environment.
The probe station comprises an optical microscope, a probe seat, a probe support arm, a GSG probe head and an electronic screen; the optical microscope is used for helping the GSG probe head to be accurately connected with the magnetoelectric antenna; the probe seat is used for connecting the probe support arm with the probe platform; the probe support arm is used for moving the position of the GSG probe head; the electronic screen is used for displaying image information of the GSG probe head and the magnetoelectric antenna, and is convenient for adjusting the position of the GSG probe head.
The vector network analyzer VNA is a device for testing electromagnetic wave energy, and can measure various parameter amplitudes and phases of a single-port network or a two-port network, and the frequency range thereof needs to include 1.7 GHz to 2.7GHz, because the resonant frequency of the electromagnetic antenna measured by the embodiment is near 2.5GHz, and the frequency range of the measured electromagnetic wave is set to be 1.7 GHz to 2.7 GHz.
The constant-temperature digital display heating table is microcomputer intelligent temperature control, is visual and accurate in display and is convenient to adjust at any time; the heating platform has the advantages of high heat conductivity coefficient, rapid rise, uniform heating and small heat loss, the temperature control range of the heating platform comprises 30-70 ℃, the temperature difference is controlled not to exceed 0.5 ℃, the highest bearable temperature of the magnetoelectric antenna in the embodiment does not exceed 80 ℃, the research temperature range is 30-70 ℃, and the constant temperature digital display heating table is used for controlling the environmental temperature of the magnetoelectric antenna.
The reference horn antenna and the receiving horn antenna both adopt linear polarization or circular polarization horn antennas, and the gain is GRIn this embodiment, the linearly polarized horn antenna is adopted, and the horn antenna with the same polarization can achieve the best electromagnetic wave signal receiving effect.
The magnetoelectric antenna in this embodiment is based on a film bulk acoustic resonator FBAR, and is mainly composed of a magnetostrictive layer and a piezoelectric layer, and magnetostrictive materials of the magnetostrictive layer are mainly classified into three types: 1) the traditional magnetostrictive materials, such as nickel-based alloy, iron-based alloy, ferrite and the like, have smaller magnetostrictive coefficients. It is not widely used; 2) in the early 70 s of the 20 th century, the American military developed a giant magnetostrictive material, the magnetostrictive coefficient of which is many times higher than that of the traditional magnetostrictive material, but the material is brittle, and the material can only be applied in some stable environments, and the application range is limited; 3) until 2000 years, a binary alloy material consisting of Fe and Ga has been reported in the United states, has excellent magnetoelectric stretching performance, higher saturation magnetization and good mechanical properties, and has received certain attention in the magnetoelectric field.
The quality of the piezoelectric film is closely related to the performance of the device, wherein the AlN material has good physical properties, such as high longitudinal wave velocity (11000m/s), high thermal stability, wide band gap (6.2eV), good piezoelectric property and good compatibility with a CMOS (complementary metal oxide semiconductor) process, and has wide application prospect. The preparation of PZT is difficult, the comprehensive performance of the device adopting AlN as the piezoelectric film is superior to that of the FBAR device based on ZnO piezoelectric film, and the device can be compatible with COMS process, based on MEMS processing technology and miniaturization trend, the FBAR device mostly adopts AlN piezoelectric material to prepare the device.
Common substrate materials of magnetoelectric antennas are silicon Si, sapphire, some organic materials and the like. Compared with other substrate materials, Si has the advantages of low cost, integration with Integrated Circuits (ICs) and the like, and is good in mechanical stability so as to ensure reliability in processing and packaging processes, and the preparation technology of Si is relatively mature, so that high-resistivity Si is used as the substrate material in the research so as to reduce electrical loss.
For electrode materials of magnetoelectric antennas, piezoelectric devices require growth of AlN films on metal underlayers. Growing AlN on a metal layer substrate is very challenging due to lattice mismatch and differences in thermal expansion coefficients. Molybdenum Mo is a refractory metal and has the advantages of small density, good conductivity, high sound wave speed, good adhesion with AlN film and the like. Columnar crystals of AlN and Mo have a local epitaxial relationship of columnar grains of AlN (002)// Mo (110), and Mo is usually selected as an electrode.
The magnetoelectric antenna in this embodiment is based on the film bulk acoustic resonator FBAR, and the film bulk acoustic resonator FBAR mainstream structure has three kinds: air gap type, back cavity type, solid state package type. In the air gap type, a sacrificial layer technique is used to form an air gap between the substrate and the bottom electrode. The structure has good mechanical firmness and is compatible with the traditional semiconductor process. The back cavity type etches most of Si material behind the substrate, the mechanical firmness is low, and the performance is influenced by incomplete etching of Si, but the process is relatively simple, and the structural design is relatively simplified; the Bragg reflection layer structure is also called as a solid assembled SMR, the bulk acoustic wave can be limited in the piezoelectric oscillation stack by adopting the high-low impedance alternating acoustic layers, the structure has strong mechanical firmness and good integratability, but the Q value is lower; aiming at the application requirements of the designed frequency band and the existing processing and testing conditions in a laboratory, a back cavity type FBAR structure is selected.
Referring to fig. 2, the magnetoelectric antenna of this embodiment is based on the FBAR structure of the back cavity type, the upper layer is a magnetostrictive material FeGa and has a thickness of 400nm, the lower layer is a piezoelectric layer AlN and has a thickness of 1000nm, the upper electrode is between the magnetostrictive layer and the piezoelectric layer, the lower electrode is between the piezoelectric layer and the substrate, and the substrate is silicon.
Step 2) measuring the S21 parameter of the reference horn antenna by a vector network analyzer VNA:
and placing the receiving horn antenna at a far-field position of the reference horn antenna, and connecting the reference horn antenna and the receiving horn antenna with a Port1 Port and a Port2 Port of a VNA of the vector network analyzer through transmission lines respectively. The structure of the electromagnetic antenna is shown in fig. 3, in order to accurately measure the gain of the electromagnetic antenna, it is necessary to satisfy the requirement that the receiving antenna is located at the far field position of the antenna to be measured, and the far field condition must be satisfied:
Figure BDA0003178242610000061
wherein D is a distance between the receiving antenna and the antenna to be measured, i.e., a distance between the receiving horn antenna and the reference horn antenna in this embodiment, D is a caliber of the antenna to be measured, λ is a wavelength of the measured electromagnetic wave, and when D is 10 λ, it can be considered that D is much larger than the wavelength; the measured electromagnetic antenna according to this embodiment has a frequency of 2.5GHz and a wavelength of 0.12 m, where d is 1.2 m; simultaneously fixing the two horn antennas at the same height and aligning the two horn antennas with the opening;
and then, calibrating a VNA (virtual network analyzer), and measuring an S21 parameter of the reference horn antenna, wherein the S21 parameter is recorded as S21,RThis is the data needed in the measurement of antenna gain by the contrast method;
step 3), acquiring the environment temperature of the magnetoelectric antenna:
(3a) placing a magneto-electric antenna to be tested on a constant-temperature digital display heating table, removing a reference horn antenna connected with a Port1 Port of a VNA of a vector network analyzer, connecting the magneto-electric antenna to be tested with a Port1 Port of the VNA through a GSG probe head, wherein the structure is as shown in figure 4, and the set temperature and the actual temperature are directly observed through a digital display screen of the constant-temperature digital display heating table to realize temperature control on the placed magneto-electric antenna;
(3b) the ambient temperature of the magnetoelectric antenna is obtained from the lowest value T through the control of the constant-temperature digital display heating tableLTo the maximum value THN temperature values T ═ T in the range1,T2,…,Tn,…,TNIn which T isL≥20℃,TH≤80℃,N≥2,TnRepresents an nth temperature value; in this embodiment, N is 5, T1=30℃,T2=40℃,T3=50℃,T4=60℃,T5=70℃。
Step 4) measuring S11 and S21 parameters of the magneto-electric antenna under each temperature value through a vector network analyzer VNA:
s11 is one of S parameters, which represents the return loss characteristic, the dB value of the loss of the antenna to be measured can be directly seen through a vector network analyzer VNA, the parameter represents the transmission efficiency of the antenna, and the larger the S11 value is, the larger the energy reflected by the antenna is, so the worse the efficiency of the antenna is; conversely, the higher the efficiency of the antenna. In addition, by looking at the S11 parameter, the resonance frequency point and the bandwidth of the antenna can be seen;
s21 is also one of the S parameters, indicating the insertion loss, i.e. how much energy is transmitted to the destination (Port2 Port), the larger this value the better, the ideal value is 1, i.e. 0 dB;
at each temperature value T by the vector network analyzer VNAnNext, the S11 parameter of the magnetoelectric antenna is measured, and an S11 parameter set S11 ═ S is obtained11,1,S11,2,…,S11,n,…,S11,NSimultaneously measuring S21 parameters of the magnetoelectric antenna to obtain an S21 parameter set S21 ═ S21,1,S21,2,…,S21,n,…,S21,NAnd storing S11 and S21, wherein S11,n、S21,nRespectively representing magneto-electric antennas at TnS11 parameter, S21 parameter;
step 5), calculating the resonant frequency gain of the magnetoelectric antenna under each temperature value and normalizing:
methods for measuring antenna gain are divided into two main categories: the method comprises the following steps of relative gain measurement and absolute gain measurement, wherein the relative gain measurement method is also called a comparison method, and the absolute gain measurement method comprises a two-same-antenna method, a three-antenna method, a mirror image method and a directional diagram integration method. The two-phase same-antenna method requires two completely same antennas to be tested, and is not suitable for the magnetoelectric antennas to be tested; the three-antenna method needs to use two additional antennas, and is complex to operate; the mirror method and the directional diagram integration method are complex in principle and operation.
And the gain is measured by a comparison method, the principle is simple, the operation is convenient, the comparison method is adopted to measure the antenna gain by comprehensively considering the embodiment, the method comprises the steps of measuring the S21 value of the reference horn antenna in the step 2) and measuring the S21 value of the magnetoelectric antenna to be measured in the step 3), calculating the gain of the resonant frequency of the magnetoelectric antenna and normalizing, and the normalization is mainly to observe the rule of the influence of the temperature on the antenna gain in order to facilitate the observation:
(5a) using a comparison method and a magnetoelectric antenna to obtain each temperature value TnS of (1)21,nStandard gain G of horn antennaRAnd S of horn antenna21,RCalculating the gain G of the resonant frequency of the magnetoelectric antennanObtaining a gain set G ═ G of the resonant frequency1,G2,…,Gn,…,GNIn which GnThe calculation formula of (2) is as follows:
Gn=GR+S21,n-S21,R
wherein G isnIndicating magneto-electric antenna at TnThe gain of the resonant frequency.
(5b) To magneto-electric antenna at TnGain G of time resonant frequencynAnd (3) carrying out normalization: selecting a resonant frequency gain set G ═ G1,G2,…,Gn,…,GNMinimum value G inminAnd maximum value GmaxThen, normalization is performed according to the following formula:
Figure BDA0003178242610000081
calculating the magneto-electric antenna at TnNormalized gain G 'of resonance frequency of time'nObtaining a normalized resonant frequency gain set G '═ G'1,G′2,…,G′n,…,G′N}。
Step 6) drawing a curve graph of the influence of temperature on the performance of the magnetoelectric antenna:
from each temperature value T stored by the vector network analyzer VNAnS11 parameter of lower magnetoelectric antenna, different temperature TnS11 parameter S of lower magnetoelectric antenna11,nThe graph of the relationship of (a) is plotted in a graph, the structure of which is shown in fig. 5, and it can be seen that as the temperature is increased from 30 ℃ to 70 ℃, the resonant frequency of the magnetoelectric antenna in the present embodiment is decreased from 2.505GHz to 2.502GHz, and the magnetoelectric antenna has a sensitivity of 75 KHz/deg.c, which indicates that the resonant frequency of the magnetoelectric antenna is decreased as the temperature is increased, because the fundamental frequency of the magnetoelectric antenna device can be according to the following formula:
Figure BDA0003178242610000082
where f is the resonant frequency of the magnetoelectric antenna, t is the thickness of the magnetoelectric antenna, c is the young's modulus of the AlN piezoelectric material in this embodiment, and ρ represents the density of the piezoelectric material. The temperature of the magnetoelectric antenna is increased along with the temperature, so that the interaction force among the atoms in the AlN material is weakened, and the Young modulus c of the AlN piezoelectric material is reduced along with the temperature increase in neglecting the influence of the thermal expansion on reducing the density rho of the piezoelectric material, so that the resonant frequency f is reduced;
the smaller the value of the S11 curve is, the less the reflected signal is, in this embodiment, the gain is-15 dB is taken as a specific working condition, and the influence relationship of the working temperature on the bandwidth of the magnetoelectric antenna is evaluated, as shown in fig. 5, when the working temperature is 30 ℃ to 70 ℃, the bandwidth of the magnetoelectric antenna is respectively: 7.46MHz, 7.54MHz, 7.58MHz, 7.66MHz, and 7.58MHz, it can be seen that the bandwidth of the magnetoelectric antenna to be measured is slightly increased and then decreased with the increase of the temperature, and relatively speaking, the influence of the temperature on the bandwidth of the magnetoelectric antenna is not great.
Then each temperature value T is drawnnNormalized resonant frequency gain G 'corresponding thereto'nThe graph of (1) is structured as shown in FIG. 6, and different temperatures and their corresponding normalized gains G'nPlotted as a line graph, from 30 ℃ to 70 ℃, the values of normalized gain are: 0. 0.3375, 0.7856, 0.9280, 1, it can be seen that overall, the normalized gain increases with increasing temperature, and the gain increases faster and then gradually decreases with increasing temperature.
In summary, by using the evaluation method of the present invention, the influence of temperature on the gain, bandwidth and resonant frequency of the magnetoelectric antenna can be evaluated more accurately.
The embodiments of the present invention have been described in detail. However, the present invention is not limited to the above-described embodiments, and various changes can be made within the knowledge of those skilled in the art without departing from the spirit of the present invention.

Claims (4)

1. A method for evaluating the influence of temperature on the performance of a magnetoelectric antenna is characterized by comprising the following steps:
(1) constructing an evaluation system:
the construction comprises a probe station, a vector network analyzer VNA, a constant temperature digital display heating station and a standard gain G which are distributed in a microwave darkroomRThe reference feedhorn and the receiving feedhorn evaluation system of (1);
(2) the S21 parameter of the reference feedhorn was measured by the vector network analyzer VNA:
placing a receiving horn antenna at a far-field position of a reference horn antenna, enabling horn mouths of the two horn antennas to be opposite, respectively connecting the reference horn antenna and the receiving horn antenna with a Port1 Port and a Port2 Port of a VNA (virtual network analyzer) through transmission lines, measuring S21 parameters of the reference horn antenna, and recording the S parameters as S21,R
(2) Acquiring the environmental temperature of the magnetoelectric antenna:
(2a) placing a magneto-electric antenna to be tested on a constant-temperature digital display heating table, removing a reference horn antenna connected with a Port1 Port of a VNA of a vector network analyzer, and connecting the magneto-electric antenna to be tested with a Port1 Port of the VNA through a GSG probe head;
(2b) the ambient temperature of the magnetoelectric antenna is obtained from the lowest value T through the control of the constant-temperature digital display heating tableLTo the maximum value THN temperature values T ═ T in the range1,T2,…,Tn,…,TNIn which T isL≥20℃,TH≤80℃,N≥2,TnRepresents an nth temperature value;
(3) the S11 and S21 parameters of the magneto-electric antenna at each temperature value are measured by a vector network analyzer VNA:
at each temperature value T by the vector network analyzer VNAnNext, the S11 parameter of the magnetoelectric antenna is measured, and an S11 parameter set S11 ═ S is obtained11,1,S11,2,…,S11,n,…,S11,NSimultaneously measuring S21 parameters of the magnetoelectric antenna to obtain an S21 parameter set S21 ═ S21,1,S21,2,…,S21,n,…,S21,NAnd storing S11 and S21, wherein S11,n、S21,nRespectively representing magneto-electric antennas at TnS11 parameter, S21 parameter;
(4) calculating the gain of the resonant frequency of the magnetoelectric antenna under each temperature value and normalizing:
(4a) using a comparison method and a magnetoelectric antenna to obtain each temperature value TnS of (1)21,nStandard gain G of reference horn antennaRAnd S21 parameter S21,RCalculating the gain G of the resonant frequency of the magnetoelectric antennanObtaining a gain set G ═ G of the resonant frequency1,G2,…,Gn,…,GNIn which GnIndicating magneto-electric antenna at TnGain of the resonant frequency of time;
(4b) to magneto-electric antenna at TnGain G of time resonant frequencynNormalization is carried out to obtain a normalized resonant frequency gain set G '═ G'1,G′2,…,G′n,…,G′NWherein, G'nRepresents GnNormalizing the result;
(5) drawing a curve graph of the influence of temperature on the performance of the magnetoelectric antenna:
from each temperature value T stored by the vector network analyzer VNAnThe S11 parameter of the lower magnetoelectric antenna is used for drawing each temperature value T of the magnetoelectric antennanCorresponding S11 parameter S11,nIs plotted, each temperature value T is plotted at the same timenNormalized resonant frequency gain G 'corresponding thereto'nGraph of the relationship of (c).
2. The method for evaluating the influence of temperature on the performance of a magnetoelectric antenna according to claim 1, characterized in that the probe station, the reference horn antenna and the receiving horn antenna in step (1) are provided, wherein:
the probe station comprises an optical microscope, a probe seat, a probe support arm, a GSG probe head and an electronic screen; the optical microscope is used for helping the GSG probe head to be accurately connected with the magnetoelectric antenna; the probe seat is used for connecting the probe support arm with the probe platform; the probe support arm is used for moving the position of the GSG probe head; the electronic screen is used for displaying image information of the GSG probe head and the magnetoelectric antenna, and is convenient for adjusting the position of the GSG probe head;
the reference horn antenna and the receiving horn antenna both adopt linear polarization or circular polarization horn antennas.
3. The method according to claim 1, wherein said passing magnetoelectric antenna in step (4a) is operated at each temperature value TnS of (1)21,nStandard gain G of horn antennaRAnd S of horn antenna21,RCalculating the gain G of the resonant frequency of the magnetoelectric antennanThe calculation formula is as follows:
Gn=GR+S21,n-S21,R
4. the method for evaluating the effect of temperature on the performance of a magnetoelectric antenna according to claim 1, wherein said magnetoelectric antenna in step (4b) is at TnGain G of time resonant frequencynNormalization is carried out, a normalization method is adopted, and the realization steps are as follows: selecting a resonant frequency gain set G ═ G1,G2,…,Gn,…,GNMinimum value G inminAnd calculating the magnetic-electric antenna at TnGain G of time resonant frequencynAnd GminTaking the logarithm of the ratio to obtain GnNormalized resonant frequency gain G'n
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