CN113549981A - Electrodeposition processing apparatus and method for composite material layer structure - Google Patents

Electrodeposition processing apparatus and method for composite material layer structure Download PDF

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CN113549981A
CN113549981A CN202010325385.4A CN202010325385A CN113549981A CN 113549981 A CN113549981 A CN 113549981A CN 202010325385 A CN202010325385 A CN 202010325385A CN 113549981 A CN113549981 A CN 113549981A
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layer
photoconductive
carrier electrode
composite material
electrode
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CN113549981B (en
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季鹏凯
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Yuanzhi Technologies Shanghai Co ltd
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Yuanzhi Technologies Shanghai Co ltd
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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00Electroforming
    • C25D1/0033D structures, e.g. superposed patterned layers
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/007Current directing devices
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/10Electrodes, e.g. composition, counter electrode
    • C25D17/12Shape or form
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00Processes for servicing or operating cells for electrolytic coating
    • C25D21/12Process control or regulation
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02Electroplating of selected surface areas
    • C25D5/026Electroplating of selected surface areas using locally applied jets of electrolyte
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/08Electroplating with moving electrolyte e.g. jet electroplating
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10Electroplating with more than one layer of the same or of different metals

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Automation & Control Theory (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

The invention relates to an electrodeposition processing device and method of a composite material layer structure, wherein the processing device comprises a forming carrier electrode, an anode and a power supply, a photoconductive layer formed according to a preset pattern is attached to the forming surface of the forming carrier electrode, a through hole is formed in the photoconductive layer according to the preset pattern, the anode of the power supply is electrically connected with the anode, the cathode of the power supply is electrically connected with the forming carrier electrode, ionic liquid is filled between the photoconductive layer and the anode, a light beam selectively irradiates the photoconductive layer, and the surface of the photoconductive layer irradiated by the light beam and the through hole are subjected to electrodeposition to form an electrodeposition layer with a controllable shape. The invention is beneficial to realizing the processing of the composite material layer structure with embedded metal, in particular to the processing of the composite material with a complex three-dimensional embedded metal structure, reduces the process difficulty and improves the forming precision and efficiency.

Description

Electrodeposition processing apparatus and method for composite material layer structure
Technical Field
The invention belongs to the technical field of electrodeposition, and particularly relates to an electrodeposition processing device and method for a composite material layer structure.
Background
In the existing electrochemical deposition, the electroplating or electroforming on the non-resin material usually needs to be performed with chemical plating firstly, a thin metal layer is formed, and then the electroplating or electroforming is performed to realize a thick electroplated layer, and a composite structure formed by combining a plurality of layers of resin and metal is difficult to realize.
For example, the anode is often customized during electroforming and it is difficult to achieve a composite layer structure pattern. If the traditional selective electrodeposition mode is adopted, namely the mode of spraying electrolyte (or ionic liquid or ionic solution) by one or more nozzles and electrifying for electrodeposition is adopted for metal forming, the structural model of the composite material layer is difficult to realize, the structure is complex, and the forming precision is low. If the composite material structure can be realized based on the existing method for manufacturing the Printed Circuit Board (PCB), the three-dimensional model structure is difficult to realize, and the manufacturing process is complex, firstly, the copper-clad plate needs to be cut and roughened, then photosensitive oil is coated or a photosensitive dry film is pasted on the copper surface, and then the preset copper layer pattern can be generated through the processes of exposure, development, etching, film stripping and the like, the process needs to be repeated for each layer of copper pattern of the multilayer circuit board, and each layer generally needs to respectively customize a negative film (such as a film and a silver salt photosensitive film) corresponding to the copper pattern, so that the manufacturing period of the printed circuit board is long, the manufacturing cost is high, and particularly, the manufacturing method is specific to a small amount of various circuit boards, the flexibility is poor, and the cost is higher. In addition, the copper clad laminate is generally formed by combining copper foil and epoxy resin with fiberglass cloth through hot pressing, the copper foil is generally generated in an electrolytic deposition mode, and the copper foil on the copper clad laminate is required to be etched to manufacture corresponding conductive circuits when the printed circuit board is manufactured, namely, the copper foil is formed through electrolytic deposition in the whole process of manufacturing the circuit board, and the copper foil is required to be subjected to electrolytic etching to generate circuits, so that the repeated process not only increases the number of steps and the length of an industrial chain, but also increases the cost and the manufacturing period, and each step is often cleaned by adopting various chemical solutions, and the process is complicated, inflexible and environmentally-friendly. If the conductive ink (such as nano-silver conductive ink) is selectively sprayed on the insulating substrate to form a composite material structure, the forming speed is slow, the conductivity needs to be improved, and the cost is high. The composite material plate is formed by paving metal powder on an insulating plate according to a preset pattern and then heating or sintering the metal powder, so that the precision is often limited, and the manufacturing cost is high. If the injection molding mode of embedded metal parts is adopted, although a three-dimensional model with composite materials or internal integrated conducting circuits can be formed, the internal composite structures or the conducting circuits are difficult to realize complex arrangement, a customized mold and an auxiliary tool are required to be matched, and the cost is high.
Disclosure of Invention
The invention aims to provide an electrodeposition processing device and method for a composite material layer structure, which are beneficial to realizing the processing of the composite material layer structure with an embedded conducting layer, in particular to the processing of a composite material with a complex three-dimensional embedded conducting layer structure, reduce the process difficulty and improve the forming precision and efficiency.
The technical scheme adopted by the invention for solving the technical problem is to provide an electrodeposition processing device with a composite material layer structure, which comprises a forming carrier electrode, an anode and a power supply, wherein a photoconductive layer formed according to a preset pattern is attached to the forming surface of the forming carrier electrode, via holes are formed in the photoconductive layer according to the preset pattern, the anode of the power supply is electrically connected with the anode, the cathode of the power supply is electrically connected with the forming carrier electrode, the photoconductive layer is covered with ionic liquid, the anode is in contact with the ionic liquid, light beams selectively irradiate the photoconductive layer, and the surface of the photoconductive layer irradiated by the light beams and the via holes are subjected to electrodeposition to form an electrodeposition layer with a controllable shape.
The forming carrier electrode is an electrode plate, the anode is a transparent conductive plate, the transparent conductive plate and the side face of the forming carrier electrode, which is provided with a photoconductive layer, are arranged oppositely, ionic liquid is filled between the transparent conductive plate and the photoconductive layer, and the light beam selectively irradiates the photoconductive layer through the transparent conductive plate to carry out selective electrodeposition.
The forming carrier electrode is an electrode plate, the forming carrier electrode further comprises a box body with at least part of bottom area being transparent, the bottom of the box body is opposite to the side face of the forming carrier electrode with the photoconductive layer, the ionic liquid is loaded in the box body, and the light beam selectively irradiates the photoconductive layer through the bottom transparent area of the box body to carry out selective electrodeposition.
The anode is a soluble anode made of a metal material corresponding to ions in the ionic liquid, and the anode is at least partially immersed in the ionic liquid.
The forming carrier electrode is an electrode plate, and the forming carrier electrode further comprises a scraper and a return feeder, wherein the scraper is used for laying a light-curable photoconductive material liquid layer on the forming carrier electrode or the composite material layer structure model and selectively irradiating the photoconductive material liquid layer through a curing light source to form a photoconductive layer with a preset pattern, and the return feeder is used for removing the uncured photoconductive material liquid.
The light guide layer is formed by a composite material layer structure model and a forming carrier electrode, and the light guide layer structure model is formed by a composite material layer structure model and a forming carrier electrode.
And the lifting platform is used for moving the molded carrier electrode and the photoconductive layer out of and/or into the ionic liquid.
The molding carrier electrode is an electrode plate, the side surface of the molding carrier electrode is coated with an insulating layer, or the side surface and the other side surface opposite to the molding surface are coated with insulating layers.
The forming carrier electrode is an electrode plate or a cylindrical electrode column capable of rotating around a central axis, the anode is a cylindrical transparent conductive rotary drum, the transparent conductive rotary drum and the forming carrier electrode are arranged in parallel and correspond to each other and can move relatively, the transparent conductive rotary drum is partially immersed in the ionic liquid, the transparent conductive rotary drum forms an ionic liquid layer on the surface protruding out of the ionic liquid through rotation and conveys the ionic liquid layer to be in contact with the photoconductive layer, and the light beam selectively irradiates the photoconductive layer from the inside of the transparent conductive rotary drum outwards to carry out selective electrodeposition.
The periphery of the transparent conductive drum is attached with a light-permeable light-operated conductive layer.
The forming carrier electrode is an electrode plate or a cylindrical electrode column which can rotate around a central axis, and also comprises a photocuring printing mechanism used for selectively photocuring the forming photoconductive layer on the forming carrier electrode or the composite material layer structure model, the photocuring printing mechanism and the molding carrier electrode can move relatively, the photocuring printing mechanism comprises a cylindrical transparent rotary drum, the transparent rotary drum and the forming carrier electrode are arranged in parallel and correspondingly, the transparent rotary drum is partially immersed in the photoconductive material liquid, the transparent rotary drum forms a photoconductive material liquid layer on the surface protruding out of the photoconductive material liquid by rotating and transmits the photoconductive material liquid layer to a position between the transparent rotary drum and the forming carrier electrode or the composite material layer structure model, and the curing light beam selectively irradiates the photoconductive material liquid layer between the transparent rotary drum and the forming carrier electrode or the composite material layer structure model from the inside of the transparent rotary drum to form a photoconductive layer with a preset pattern; and a material returning device for removing the uncured photoconductive material liquid on the molded carrier electrode or the composite material layer structural model.
The forming carrier electrode is an electrode plate or a cylindrical electrode column capable of rotating around a central axis, and further comprises a photocuring printing mechanism for performing selective photocuring forming on the forming carrier electrode or a composite material layer structure model to form a photoconductive layer, the photocuring printing mechanism and the forming carrier electrode can move relatively, the photocuring printing mechanism is an electrostatic imaging photocuring printing mechanism, the electrostatic imaging photocuring printing mechanism comprises a developing engine, a material conveyer and a light-permeable and rotatable developing drum, the developing drum and the forming carrier electrode are arranged in parallel and correspondingly, the developing engine is arranged at the upstream of the material conveyer along the rotating direction of the developing drum, the surface of the developing drum selectively forms an electrostatic latent image through the developing engine and selectively adsorbs a light-curable photoconductive material provided by the material conveyer through the electrostatic latent image to form a developing adhesion layer, the developing adhesion layer is conveyed between the developing rotary drum and the molded carrier electrode or the composite material layer structure model through the rotation of the developing rotary drum, and the curing light beam irradiates the developing adhesion layer between the developing rotary drum and the molded carrier electrode or the composite material layer structure model from the inside of the developing rotary drum to form a light guide layer with preset patterns, wherein the light guide layer is adhered to the molded carrier electrode or the composite material layer structure model.
The forming carrier electrode is a circular electrode disc capable of rotating around a central axis, the anode is a round table-shaped transparent conductive rotary table, a tangent plane at the top of the peripheral surface of the transparent conductive rotary table is parallel to and corresponds to the forming surface of the forming carrier electrode and can be relatively far away from the forming surface, the transparent conductive rotary table is partially immersed in ionic liquid, the transparent conductive rotary table forms an ionic liquid layer on the surface protruding out of the ionic liquid through rotation and conveys the ionic liquid layer to be in contact with a light guide layer, and light beams selectively irradiate the light guide layer outwards from the inside of the transparent conductive rotary table to carry out selective electrodeposition.
The molding carrier electrode is a circular electrode disc which can rotate around a central axis, and also comprises a photocuring printing mechanism, the photocuring printing mechanism and the molding carrier electrode can relatively move away from each other, the photocuring printing mechanism comprises a transparent rotary drum in a circular truncated cone shape, the section of the top of the outer peripheral surface of the transparent rotary drum is parallel and corresponding to the molding surface of the molding carrier electrode, the smaller end of the transparent rotary drum faces to the central axis of the molded carrier electrode, the transparent rotary drum is partially immersed in the photoconductive material liquid, the transparent rotary drum forms a photoconductive material liquid layer on the surface protruding out of the photoconductive material liquid by rotating, the photoconductive material liquid layer is transmitted between the transparent rotary drum and the forming carrier electrode or the composite material layer structure model, and the curing light beam selectively irradiates the photoconductive material liquid layer between the transparent rotary drum and the forming carrier electrode or the composite material layer structure model from the inside of the transparent rotary drum to form a photoconductive layer with a preset pattern.
The photoconductive layer is attached to the molding surface of the molded carrier electrode by a conductive, easy-to-delaminate layer.
The technical scheme adopted by the invention for solving the technical problem is to provide an electrodeposition processing method of a composite material layer structure, and the electrodeposition processing device using the composite material layer structure comprises the following steps:
(1) selectively forming a photoconductive layer on the molding surface of the molded carrier electrode according to a preset pattern, wherein through holes are selectively formed on the photoconductive layer;
(2) selectively irradiating the light guide layer through a light beam, wherein the irradiation area of the light beam covers at least partial area of at least one through hole, selectively performing ion deposition on the surface of the area, irradiated by the light beam, of the light guide layer and in the through hole to form an electrodeposition layer with controllable shape, and combining the light guide layer and the electrodeposition layer to obtain a composite material layer structure model.
When the multilayer composite material layer structure is processed, the method further comprises the following steps:
(3) continuously and selectively forming a light guide layer according to a preset pattern on the basis of the formed composite material layer structure model, wherein the newly formed light guide layer at least has a through hole, and the projection of the surface of the electrodeposition layer in the upper layer is at least partially overlapped with the electrodeposition layer in the upper layer;
(4) selectively irradiating the newly formed photoconductive layer by a light beam, wherein the irradiation area of the light beam covers at least partial area of at least one through hole, selectively performing ion deposition on the surface of the newly formed photoconductive layer and the through hole to form an electrodeposition layer with a controllable shape, and forming conductive connection between the electrodeposition layers of adjacent layers through the electrodeposition layer in the through hole;
(5) and (5) repeating the step (3) and the step (4) to form the photoconductive layer and the electric deposition layer by layer to obtain a multi-level composite material layer structure.
The photoconductive layer is formed by adopting a photoconductive material with thermosetting property or light curing property, laying the photoconductive material on a molded carrier electrode or a composite material layer structure model by a screen printing technology and then heating and curing or light curing; or the photoconductive layer is formed by selectively spraying a thermosetting or light-curable photoconductive material onto the molded carrier electrode or the composite material layer structure model through a spray head and then heating and curing or photocuring the thermosetting or light-curable photoconductive material; or the photoconductive layer is formed by laying a light-curable photoconductive material on the molded carrier electrode or the electrodeposited layer through a scraper and then carrying out light curing through selective irradiation of a curing light beam; or the photoconductive layer is formed by selectively laying a light-curable photoconductive material on the molded carrier electrode or the electrodeposited layer through an electrostatic imaging photocuring printing mechanism and then performing photocuring through the irradiation of curing light beams; or, the photoconductive layer is formed by pressing a prefabricated photoconductive material film on the molded carrier electrode or the electrodeposited layer.
In step (1), the photoconductive layer completely covers the molding surface of the molded carrier electrode except at the via hole.
And covering a shading material layer on the surface of the multi-level composite material layer structure.
In the processing process of the multi-layer composite material layer structure, a through hole chain is arranged at a position close to the edge inside a pre-formed composite material layer structure model, and an electro-deposition layer connected with the through hole chain in each layer is in conductive connection with a formed carrier electrode through the through hole chain; or in the processing process of the multi-layer composite material layer structure, a deposition chain is formed by electrodeposition outside a preformed composite material layer structure model, and the electrodeposition layer connected with the deposition chain in each layer is electrically connected with the forming carrier electrode through the deposition chain.
Advantageous effects
First, the present invention implements the processing of the composite material layer structure by controlled selective electrodeposition on a material (photoconductive layer) whose conductivity changes under illumination, and can be used for processing a composite material structure model with integrated conductive lines and insulating materials, and also can be used for manufacturing circuit boards. The composite layer structure processing with the complex three-dimensional embedded metal material can be realized, the forming precision is high, the strength of the model can be improved through the embedded metal structure, and the internal three-dimensional conductive circuit can be realized. For example, the circuit structure and the shell of the electronic product can be integrated into a whole, so that the product structure is simplified, the number of parts is reduced, and the structure compactness and reliability are improved. If the conductive paste is used for manufacturing a circuit board, the circuit of the circuit board is high in precision and good in conductivity. The die can be not customized, the application is flexible, and the cost is low.
Secondly, the process method is simple. Electrodeposition of a thicker metal layer can be achieved by selectively illuminating the photoconductive layer with light to form an electrodeposited layer, instead of using electroless plating or the like, and by using vias for electrical connection. Because the photoconductive layer is laid on the electrode plate (such as a cathode plate) or the upper layer of the electro-deposition layer, the photoconductive layer at the outermost layer can be always selectively irradiated and selectively electro-deposited by adopting the through hole for electric connection, the processes of all layers are basically consistent when the multilayer structure is realized, and the realization of automation is facilitated. The light guide layer without irradiation has almost no electro-deposition, can realize accurate electro-deposition, and the distance between the anode and the cathode has little influence on the electro-deposition precision, the equipment structure can be greatly simplified, the application is flexible, and the maintenance is convenient. The anode can be an insoluble anode structure or a soluble anode structure, can be reconstructed and realized on the basis of the traditional electroplating or electroforming equipment, and is convenient to apply and low in cost.
Thirdly, the method or the device of the invention can integrate the selective electrodeposition by light control and the curing process of selective photosensitive material by light control, and control the forming of the conducting layer and the insulating layer by light beams, thereby realizing better precision matching and forming speed. In addition, the light guide material is selectively combined to the electric deposition layer by utilizing a photocuring mode, so that the forming process flow of the light guide material can be greatly simplified, and the forming speed and the forming precision can be improved. In addition, the light guide layer can be molded and selectively electrodeposited in a vortex or spiral mode, so that the light guide layer can be selectively arranged and selectively electrodeposited at the same time, and the molding speed can be further increased.
Drawings
FIG. 1 is a schematic flow chart of a selective electrodeposition processing method for a composite material layer structure according to the present invention.
FIGS. 2a-2m are schematic views of the electrodeposition process for forming the composite layer structure according to the present invention.
FIG. 3a is a schematic diagram of a structure of the anode of the present invention using a transparent conductive plate.
Fig. 3 b-3 d are schematic diagrams of the process of manufacturing the circuit board by using the method of the invention.
FIG. 4 is a schematic diagram of electrodeposition using a box structure with a transparent bottom according to the present invention.
FIG. 5 is a schematic diagram of the electrodeposition of the shaped carrier electrode driven by the elevating platform according to the present invention.
FIG. 6a is a schematic diagram of a structure of selective electrodeposition using a transparent conductive drum according to the present invention.
FIG. 6b is a schematic sectional view A-A of FIG. 6 a.
FIG. 7a is a schematic representation of the electrodeposition of a multilayer composite material using a transparent conductive drum according to the present invention.
FIG. 7B is a schematic cross-sectional view of B-B of FIG. 7 a.
Fig. 8 is a schematic structural diagram of a light guide layer selectively formed by using a nozzle according to the present invention.
FIG. 9a is a schematic diagram of a structure for selectively illuminating a lightguide layer using a transparent drum according to the present invention.
FIG. 9b is a schematic cross-sectional view of C-C of FIG. 9 a.
FIG. 10 is a schematic view of the present invention employing a scraper to lay down the light guide material and selectively lighting the light guide layer.
Fig. 11a-11h are schematic diagrams of a process for manufacturing a circuit board by using the method of the present invention.
FIG. 12a is a schematic structural diagram of a photoconductive layer selectively formed by an electrostatic imaging photo-curing mechanism according to the present invention.
FIG. 12b is a schematic cross-sectional view of D-D of FIG. 12 a.
Fig. 13 is a schematic view of the structure of the present invention using vortex mode to selectively shape the photoconductive layer and electrodeposition.
Fig. 14 is a schematic diagram of a structure for selectively forming a photoconductive layer and performing electrodeposition in a spiral manner according to the present invention.
Detailed Description
The invention will be further illustrated with reference to the following specific examples. It should be understood that these examples are for illustrative purposes only and are not intended to limit the scope of the present invention. Further, it should be understood that various changes or modifications of the present invention may be made by those skilled in the art after reading the teaching of the present invention, and such equivalents may fall within the scope of the present invention as defined in the appended claims.
Fig. 1 illustrates a flow chart of an electrodeposition method for realizing a composite material layer structure according to the present invention, which includes the following steps:
step 1, selectively forming a light guide layer on an electric conductor according to a preset pattern; for example, the photoconductive layer may be formed by heating a photoconductive material having a thermosetting property after being laid on the electrical conductor by screen printing, or by selective beam irradiation, or by the method shown in fig. 8, 9, 10, 11, 12, 13, or 14. Preferably, vias are also provided in the light guiding layer.
Step 2, an electrical conductor (for example, the shaped carrier electrode 41 or the electrodeposited layer 11 in fig. 2) is electrically connected with a negative electrode of the power supply 6, the anode 45 is electrically connected with a positive electrode of the power supply 6, the ionic liquid 3 is filled between the anode 45 and the photoconductive layer 12, the photoconductive layer is selectively irradiated by the light beam 51, the irradiated area is electrically conductive, and the power supply 6 drives ions in the ionic liquid 3 to selectively electrodeposit on the photoconductive layer to form an electrodeposited layer. Electrodeposition can be simultaneously performed in the via holes.
At the outset, the electrical conductor refers to the shaped carrier electrode 41, such as an electrode plate (e.g., a metal plate); in the intermediate process, the electrical conductor is referred to as an electrodeposited layer 11, and the electrodeposited layer 11 may be electrically conductive. Note that, in step 1, a plurality of photoconductive layers may be formed, and then step 2 is performed, and in step 1, photoconductive layers of different materials may also be formed. In step 2, electrodeposited layers of different materials, such as wiring layers of different metals, conductive layers of multiple metal materials such as copper, tin or aluminum, etc., may also be formed.
In step 1, a via hole 13 for electrical connection is provided on the photoconductive layer 12, and in illumination, it is preferable that the illumination area covers at least a partial area of the via hole 13 (including a case where the two are intersected or tangent), so as to allow ions to deposit in the via hole 13 to connect the formed carrier electrode 41 or the electrodeposition layer on the previous layer with the electrodeposition layer on the current layer, when the electrodeposition layer increases in thickness and blocks the light beam 51 from irradiating the photoconductive layer 12, the electrodeposition layer 11 on the current layer plays a role of conductive connection through the electrodeposition layer deposited in the via hole 13 to electrically connect with the formed carrier electrode 41, and electrodeposition can be continued on the electrodeposition layer 11 until the power supply 6 is turned off, thereby forming the electrodeposition layer with a preset thickness. For example, metals such as copper, gold, silver, aluminum, chromium, etc. have certain light transmittance when the thickness is 1nm to 15nm, and ionic liquids of these materials are selectively deposited to form a thin electrodeposited layer, so that when the thickness of the electrodeposited layer is increased and the light transmittance is not stopped, the electrodeposited layer in the via hole 13 is electrically connected with the molded carrier electrode 41.
In step 1, the first photoconductive layer is laid to cover the molding surface of the molded carrier electrode (e.g., an electrode plate), so as to perform an insulating function, and the electrical connection between the electrodeposited layer and the molded carrier electrode can be realized by providing the via hole. The photoconductive layer 12 is a thin layer of a predetermined pattern formed of a material that conducts electromagnetic wave radiant energy, and the speed of electrodeposition or the thickness of the electrodeposited layer can be controlled by controlling the intensity, time, etc. of the light beam irradiating different areas of the photoconductive layer. The shaped carrier electrode 41 may be a metal plate or a pre-fabricated circuit board (e.g., a printed circuit board based on FR 4), and when the shaped carrier electrode 41 is a circuit board, the formed composite structural model may be integrated with the circuit board.
Figures 2a-2m illustrate one specific process for forming a composite structure based on selective electrodeposition of a photoconductive layer. Fig. 2a shows that the molded carrier electrode 41 is an electrode plate, a photoconductive layer 12 formed according to a predetermined pattern is attached to the molding surface of the molded carrier electrode 41 (the surface for forming the composite material layer structure for conducting electricity and attaching the composite material layer structure on the molding side of the molded carrier electrode 41), and vias 13 for forming electrical connections may be selectively provided on the photoconductive layer 12 as needed. Fig. 2b or fig. 2c schematically shows that the shaped carrier electrode 41 is electrically connected to the negative electrode of the power supply 6, the positive electrode of the power supply 6 is electrically connected to the anode 45, and the ionic liquid 3 is filled between the anode 45 and the photoconductive layer 12. The light beam 51 selectively irradiates the photoconductive layer 12 through the ionic liquid 3, the irradiation area of the light beam 51 covers at least a partial area of at least one via hole 13, for example, the irradiation area of the light beam 51 completely covers the via hole 13 or partially covers the via hole 13, and selective ion deposition is performed on the surface of the area of the photoconductive layer 12 irradiated by the light beam 51 and in the via hole 13 to form the electrodeposition layer 11 with controllable shape. The electrodeposition thin layer 11a is formed in the early stage of electrodeposition, for example, the thickness is less than 20nm, since the ionic liquid 3 in the via hole 13 is directly electrically connected with the shaped carrier electrode 41, the electrodeposition thin layer 11a is directly electrodeposited on the shaped carrier electrode 41 in the via hole 13, the electrodeposition thin layer 11a is also formed in the peripheral area of the via hole 13 by the irradiation of the light beam 51, the electrodeposition thin layers 11a can be electrically connected, when the thickness of the electrodeposition thin layer 11a is increased to block the irradiation of the light beam 51 to the photoelectric layer 12, the electrodeposition thin layer 11a can also be electrically connected with the shaped carrier electrode 41 through the via hole 13, and the electrodeposition is continued until the power supply 6 is cut off, for example, the power supply 6 is cut off by the switch 62 (refer to fig. 8), and the thickness of the electrodeposition layer 11 is increased, as shown in fig. 2 d.
Figure 2c illustrates a perspective view of an electrodeposition apparatus. The device comprises a forming carrier electrode 41, an anode 45 and a power supply 6, wherein a light guide layer 12 formed according to a preset pattern is attached to the forming surface of the forming carrier electrode 41, a through hole 13 is formed in the light guide layer 12 according to the preset pattern, the anode of the power supply 6 is electrically connected with the anode 45, the cathode of the power supply 6 is electrically connected with the forming carrier electrode 41, the light guide layer 12 is covered with ionic liquid 3, the anode 45 is in contact with the ionic liquid 3, a light beam 51 selectively irradiates the light guide layer 12, and the surface of the light guide layer 12 irradiated by the light beam 51 and the through hole 13 are subjected to electrodeposition to form an electrodeposition layer 11 with a controllable shape. For example, a schematic light beam 51 (e.g., a laser beam) is modulated by the optical system 25, the optical system 26, and the optical system 27, passes through the ionic liquid 3 and is selectively irradiated and scanned on the photoconductive layer 12 in a predetermined pattern to form the electrodeposited thin layer 11 a. For example, optical train 25 is shown as a mirror and is pivotable about an axis 96, optical train 26 is a mirror and is pivotable about an axis 97, and optical train 27 is a focusing mirror, such as a field flattener lens. In addition, the figure also shows that the thin electrodeposition layer 11a-1 can be electrically connected with the shaped carrier electrode 41 through the through hole 13-1, the thin electrodeposition layer 11a-2 can be electrically connected with the shaped carrier electrode 41 through the through hole 13-2, and the thin electrodeposition layer 11a-3 can be electrically connected with the shaped carrier electrode 41 through the through hole 13-3. When the electro-deposition thin layer 11a blocks the light beam 51 from irradiating the photoconductive layer 12, the electro-deposition can be continued to form the electro-deposition layer 11 with a set thickness as shown in fig. 2 d. The composite layer structure model is a composite layer structure model formed by combining the photoconductive layer 12 and the electrodeposited layer 11.
Fig. 2e shows that on the basis of the formed composite material layer structure model, the light guide layer 12 is continuously and selectively formed according to the preset pattern, and the projection of the surface of the electrodeposition layer 11 in the previous layer, on which at least one via hole 13 for electrical connection is present, of the newly formed light guide layer 12 at least partially overlaps with the electrodeposition layer 11 in the previous layer. Fig. 2f illustrates that the newly formed photoconductive layer 12 is selectively irradiated by a light beam 51, the irradiated area of the light beam 51 covers at least a partial area of at least one of the electrically connecting via holes 13, selective ion deposition is performed on the surface of the newly formed photoconductive layer 12 and in the via holes 13 to form the shape-controllable electrodeposited layer 11, and the electrodeposited layers 11 of adjacent layers form conductive connection through the electrodeposited layers 11 in the electrically connecting via holes 13; the light beam 51 selectively irradiates the photoconductive layer 12 to form the electrodeposited thin layer 11a in an initial stage, and when the increase in thickness of the electrodeposited thin layer 11a blocks the light beam 51 from irradiating the photoconductive layer 12, the electrodeposition is continued through the electrodeposited layer 11 in the via hole 13 to form the electrodeposited thin layer 11 with a set thickness, as shown in fig. 2 g. Fig. 2h illustrates the continued incorporation of a new conductive layer 12 on the electrodeposited layer 11. Fig. 2i illustrates the formation of a new electrodeposited layer 11 by selective irradiation. Fig. 2j and fig. 2k repeat the above process, and finally a predetermined structural model of the composite material layer can be formed, as shown in fig. 2L. As shown in fig. 2m, an upper light-shielding material layer 25 may be further bonded on the surface of the composite material layer structure model to ensure that the photoelectric layer 12 is not irradiated by external light, so as to maintain an insulating state, so that the inner electrodeposition layer 11 may form a three-dimensional conductive circuit, and the upper light-shielding material layer 25 may be bonded before or after the composite material layer structure model is taken off from the molding carrier electrode 41, that is, the model may be fully covered. Certain areas, such as area 12a in the figure, may also be purposely exposed and used to form the light sensing circuit. The anode 45 in fig. 2 may be a soluble anode, for example, a metal material corresponding to ions in the ionic liquid 3.
In the embodiment shown in fig. 3a, the anode 45 is an insoluble anode plate of transparent conductive material. The negative electrode of the power supply 6 is electrically connected to the shaped carrier electrode 41, the positive electrode is electrically connected to the positive electrode 45, the positive electrode 45 is a transparent conductive plate, and is light-permeable and electrically conductive, the ionic liquid 3 is disposed between the shaped carrier electrode 41 and the positive electrode 45, the ionic liquid 3 may not fill the space between the shaped carrier electrode 41 and the positive electrode 45, and the ionic liquid 3 contacts the positive electrode 45 and covers the light guide layer 12. The light source 5 is arranged on one side of the anode 45 far away from the molded carrier electrode 41, a light beam 51 emitted by the light source 5 is selectively irradiated onto the photoconductive layer 12 through the anode 45 and the ionic liquid 3 to form a conductive area with a preset pattern, and ions in the ionic liquid 3 are driven by electromotive force of the power supply 6 to deposit on the conductive area with the preset pattern on the photoconductive layer 12 to form the electrodeposition layer 11. Fig. 3b is a schematic cross-sectional side view of fig. 3a, and illustrates that an insulating layer 44 may be disposed around the shaped carrier electrode 41 to prevent the ionic liquid 3 from being erroneously contacted with the shaped carrier electrode 41 for conduction. The structure only needs to ensure that the ionic liquid 3 is immersed in the outermost photoconductive layer 12, so that the depth requirement of the ionic liquid 3 can be greatly reduced, the use amount of the ionic liquid 3 is reduced, and the application cost is reduced. And because the anode 45 is made of transparent conductive material, the electric field between the photoconductive layer 12 and the anode can be more uniform, which is more beneficial to the uniformity of the electrodeposition speed at each position and is beneficial to improving the thickness consistency and the deposition precision of the electrodeposition layer 11.
Fig. 3b to 3d illustrate a process of forming a circuit board. In fig. 3b a composite structure of the photoconductive layer 12 and the electrodeposited layer 11 is formed. If no or few vias are desired to be formed in the prefabricated composite layer structure model (such as a circuit board), via chains 13y can be formed at the edge positions inside the prefabricated composite layer structure model, such as the via chain structure on the right side in the figure, so that each electrodeposited layer can be electrically connected to the patterned carrier electrode 41 through the via chains. In addition, a continuously connected electrodeposition layer can be formed outside the prefabricated composite layer structural model, such as the deposition chain 13x on the left side in the figure, and each electrodeposition layer can be electrically connected with the molded carrier electrode 41 through the deposition chain 13 x. This via chain 13y or deposition chain 13x may finally be removed, for example cut off, as shown in fig. 3c, and the via chain 13y or deposition chain 13x is cut off at a cutting line 95. In the present invention, the deposition chain 13x and the via chain 13y have the same function, and are both arranged to realize the electrical connection between the electrodeposited layers 11 in the required level in the modeling process, and the deposition chain 13x can be regarded as a special embodiment of the via chain 13y, that is, a special case when the via chain 13y is located at the edge of the photoconductive layer 12, that is, an open via structure is formed.
In addition, fig. 3b also illustrates that a plurality of conductive connection lines can be formed in one via hole, for example, the left side of the via hole 13z in the figure is irradiated by the light beam 51za, the electrodeposited layer 11 is formed on the left side of the via hole 13z, the right side of the via hole 13z is irradiated by the light beam 51zb, and the electrodeposited layer 11 is formed on the right side of the via hole 13z, so that 2 vertical electrical connection lines are formed by one via hole, and of course, more vertical lines can be formed, so that the wiring density in the circuit board can be greatly increased, the volume of the circuit board can be reduced, or parasitic parameters in the circuit can be reduced. A light-shielding layer 25 can also be combined on the surface of the circuit board to ensure that the light-guiding layer 12 is insulated during use, and to ensure the normal electrical transmission function of the circuit board. The method for manufacturing the circuit board can omit the processes of manufacturing a negative film, coating photosensitive oil or pasting a photosensitive dry film, exposing, developing, etching, removing the film and the like, and the electrodeposition in the through hole 13 can also be carried out without pre-depositing a thin metal layer in a chemical plating mode and then carrying out electroplating, so that the process can be greatly simplified, the efficiency is improved, and the cost is reduced.
Figure 4 illustrates an electrodeposition embodiment. The ionic liquid 3 is arranged in the box body 31, the bottom of the box body 31 is provided with a transparent area, the anode 45 is at least partially immersed in the ionic liquid 3, and the light beam 51 selectively irradiates the photoconductive layer 12 through the transparent area at the bottom of the box body 31 and the ionic liquid 3 to form the electro-deposition layer 11. In addition, an easy-to-detach layer 42 may be disposed between the molded carrier electrode 41 and the light guide layer 12, and the easy-to-detach layer 42 may be conductive and easily detached from the molded carrier electrode 41, so as to be conveniently detached from the molded carrier electrode 41 after the molding is completed. The structure can reduce the depth of the ionic liquid 3, and the anode 45 does not need to be made of transparent materials, thereby being beneficial to simplifying the cost and facilitating the maintenance.
Fig. 5 shows that the shaped carrier electrode 41 is disposed on a lifting platform 32, the ionic liquid 3 is disposed in the box 31, the lifting platform 32 drives the shaped carrier electrode 41 to be immersed in the ionic liquid 3, and the light beam 51 selectively irradiates the photoconductive layer 12 through the ionic liquid 3 above to form the electrodeposition layer 11. With the structure, the lifting platform 32 can be used for conveniently lifting the formed carrier electrode 41 out of the ionic liquid 3, performing other treatments such as cleaning and drying, and then laying the next photoconductive layer 12. Then, the lower part of the lifting platform is immersed into the ionic liquid 3 to carry out the electrodeposition of the next electrodeposition layer 11.
Fig. 6a shows that the shaped carrier electrode 41 is an electrode plate, the anode 45 is a cylindrical and rotatable transparent conductive drum, the anode 45 is disposed parallel to the shaping surface of the shaped carrier electrode 41 (i.e. the central axis of the anode 45 is disposed substantially parallel to the shaping surface of the shaped carrier electrode 41) and can move relatively, for example, the anode 45 can also move along arrow 91, or the shaping surface of the shaped carrier electrode 41 in fig. 13 rotates along arrow 95 around its central axis. The transparent conductive drum is partially immersed in the ionic liquid 3, the ionic liquid 3 is arranged in the box body 31, the transparent conductive drum forms an ionic liquid layer on the surface protruding out of the ionic liquid 3 through rotation and conveys the ionic liquid layer to be contacted with the photoconductive layer 12, the light beam 51 selectively irradiates the photoconductive layer 12 through the ionic liquid layer from the inside of the transparent conductive drum to the outside for selective electrodeposition, and the electrodeposition layer 11 is formed on the photoconductive layer 12. Fig. 6a also illustrates that the anode 45 can be rotatably disposed on the box 31, the box 31 can be translatably disposed on the guide rail 33, and the anode 45 is constrained by the guide rail 33 to move along arrow 91, so that the anode 45 can selectively electrodeposit the whole light guide layer 12. Fig. 6b shows that the light source 5 is an array of point light sources, is disposed inside the anode 45, and allows the point light sources to be selectively turned on according to the position information to be electrodeposited, and the point light sources at positions where electrodeposition is not required are turned off. Other light sources may of course be used, or the light source 5 may be arranged outside the anode 45, for example by means of an optical train transmitting a light beam to the inside of the anode 45. Because ionic liquid 3 drives behind the formation ionic liquid thin layer through the rotation of positive pole 45 and contacts with photoconductive layer 12, can reduce unnecessary area of contact between ionic liquid 3 and photoconductive layer 12 by a wide margin, avoid influencing the electrodeposition accuracy because the unnecessary electrodeposition that the condition such as the leakage current of photoconductive layer 12 leads to, and because the quick rotation of positive pole 45 can quick effectual change ionic liquid, improve the speed of electrodeposition, and this structure is succinct, ionic liquid 3's application volume is few, realize carrying out selective electrodeposition to photoconductive layer 12 of large tracts of land more easily, do benefit to and reduce application cost.
Fig. 7a is a schematic illustration of an embodiment of forming a multilayer composite layer model based on fig. 6 a. Continuously combining a new light guide layer 12 on the electro-deposition layer 11, selectively electro-depositing on the light guide layer 12 to form a new electro-deposition layer 11, and repeating the formation of a multi-layer composite material layer structure, wherein the multi-layer electro-deposition layer and the molded carrier electrode 41 are electrically connected through the through hole 13. Fig. 7B is a cross-sectional view B-B of fig. 7a, and fig. 7B also illustrates that the shaped carrier electrode 41 can be further constrained by the guide rail 34 to move along arrow 92, for example, the shaped carrier electrode 41 can be moved along arrow 92 for a set distance each time a photoconductive layer or an electrodeposited layer is completed, and then the photoconductive layer of the next layer or the electrodeposited layer of the next layer is deposited. Fig. 7a further illustrates that a transparent photoconduction layer 58 may be attached to the outside of the anode 45, and when the light beam 51 passes through the photoconduction layer 58 and the ion liquid layer selectively illuminates the photoconductive layer 12, the photoconduction layer 58 is also selectively illuminated, only the location on the photoconduction layer 58 that is illuminated by the light beam 51 becomes conductive, and the conductive areas on the photoconduction layer 58 correspond to the conductive areas on the photoconductive layer 12, further enhancing the precise control of the position of the electrodeposition, but also the electrodeposition at the via hole 13 site can be controlled, when no beam is irradiated at the via hole 13 site, since the photoconductive layer 58 remains insulated for this position, no electrodeposition of the vias occurs, or the intensity and time of the light irradiation are controlled to adjust the speed of the electrodeposition, etc., and in addition, the electrodeposited layer 11 with different thicknesses can be formed by controlling the intensity and time of the light beam 51 irradiating at different positions. A current sensor 61 may also be provided to feed back or protect the current of the electrodeposition process. By adopting the structure, in the process of forming the multilayer composite material structure, the uniformity of electrodeposition at different parts can be controlled more easily or the thicknesses of different parts can be set respectively, and the multilayer model structure can be realized more favorably.
Fig. 8 illustrates that the light guide layer 12 may be selectively disposed by the shower head 71 on the basis of the electrodeposition layer 11. For example, the nozzle 71 first sprays the photoconductive material droplets on the electrodeposited layer 11 according to a predetermined pattern, and then the droplets are solidified by heating, or by light irradiation, etc., and the nozzle 71 may also move along the arrow 91 to perform the entire layer spraying to form the photoconductive layer 12. This figure corresponds to the case where the lift table 32 is moved out of the ionic liquid 3 on the basis of fig. 5. A switch 62 may also be provided to disconnect the electro-deposition line, improving the safety of the operation of the process of providing the light-guiding layer 12. The photoconductive layer material may be a photo-curable material, such as a photosensitive photoconductive material formed by mixing a photosensitive resin liquid with a photoconductive material powder.
Figure 9a illustrates another embodiment of forming a light guiding layer. Wherein, the forming carrier electrode 41 is an electrode plate, and further comprises a photocuring printing mechanism for selectively photocuring the forming photoconductive layer 12 on the forming carrier electrode 41 or the composite material layer structural model, the photocuring printing mechanism and the forming surface of the forming carrier electrode 41 can move relatively, the photocuring printing mechanism comprises a cylindrical transparent drum 56, the transparent drum 56 can rotate along an arrow 92, the transparent drum 56 is arranged in parallel and corresponding to the forming surface of the forming carrier electrode 41, the transparent drum 56 is partially immersed in the photoconductive material liquid 72, the photoconductive material liquid 72 can be photocured, the photoconductive material liquid 72 is arranged in the box 31, the transparent drum 56 forms a photoconductive material liquid layer on the surface protruding out of the photoconductive material liquid 72 by rotating and transmits the photoconductive material between the transparent drum 56 and the forming carrier electrode 41 or the composite material layer structural model, a curing light beam (53) selectively irradiates the photoconductive material liquid layer between the transparent drum 56 and the shaped carrier electrode 41 or the composite material layer structure model to form the photoconductive layer 12 with a preset pattern from the inside of the transparent drum 56 toward the shaped carrier electrode 41, and the cured photoconductive layer 12 is detached from the transparent drum 56 and bonded to the shaped carrier electrode 41 or the composite material layer structure model. The transparent drum 56 can also be moved along arrow 91 to form a new layer of the light guiding layer 12. The transparent drum 56 is shown rotatably disposed on the housing 31, and the housing 31 is movably disposed on the guide rail 33, and the transparent drum 56 is constrained by the guide rail 33 to move along arrow 91. A return 73, such as a vacuum suction, may also be provided to return uncured photoconductive material liquid 72, leaving the photoconductive layer 12 in the set shape. Fig. 9b illustrates that the transparent drum 56 can be rotated along axis 96. The optimal rotation speed of the transparent drum 56 along arrow 92 in fig. 9a is matched with the movement speed along arrow 91, so that the transparent drum 56 and the electrodeposited layer 11 are purely rolled, the laying of the photosensitive light guide thin layer is smooth and accurate, and the precision of the light guide layer 12 is improved.
Fig. 10 illustrates that a scraper 83 (which may be a scraper-type structure, a roller-type structure or other structures) may be used to scrape a photoconductive material layer on the formed carrier electrode 41 or the electrodeposited layer 11, and then a curing beam 53 is used to perform selective light curing, and then a recoverer 73 is used to remove the uncured photoconductive material to form the photoconductive layer 12. The curing beam 53 may be selectively cured by irradiation after the scraper 83 has laid the entire photoconductive material layer. Such a method is simple and easy to implement for laying a large area light guide layer. The photoconductive layer material in the embodiments shown in fig. 8, 9 and 10 may be a photo-curable material, such as a photosensitive photoconductive material formed by mixing a photosensitive resin liquid with a photoconductive material powder.
Fig. 11a-11h illustrate a method process for implementing a circuit board. Fig. 11a illustrates the formation of the photoconductive layer 12 on the molded carrier electrode 41, and the photoconductive layer 12 can be formed by various methods, such as the methods shown in fig. 8 to fig. 10, and in addition, a prefabricated photoconductive material film can be laid on the molded carrier electrode 41 and combined to form the photoconductive layer 12, for example, the photoconductive material film or thin plate is combined with the molded carrier electrode 41 by hot pressing, or the photoconductive layer can be formed by Physical Vapor Deposition (PVD) or Chemical Vapor Deposition (CVD). The vias 13 may be laser machined for the locations where vias are to be located, as shown in fig. 11b, or may be a prefabricated film or sheet of photoconductive material having a predetermined pattern and vias 13. Fig. 11c illustrates the selective irradiation of the photoconductive layer 12 to form the electrodeposited layer 11, for example, as in the embodiments of fig. 2c, 3a, 3b, or fig. 4-7. Fig. 11d schematically shows the formation of a new photoconductive layer 12 by hot-pressing the photoconductive material film 12a onto the electrodeposited layer 11 by a pressing mold 81 using the photoconductive material film 12a, as shown in fig. 11 e. Vias 13 can then also be made in the photoconductive layer 12 at predetermined locations corresponding to the overlying electrodeposited layer 11, as shown in fig. 11 f. A new electrodeposited layer 11 is formed as shown in fig. 11 g. The mold may be repeated to form a multilayer composite structure or a multilayer circuit board may be formed as shown in fig. 11 h. By forming the photoconductive layer by hot-pressing the prefabricated photoconductive material film 12a onto the electrodeposited layer 11 or the molded carrier electrode 41, it is more advantageous to reduce the cost and to improve the material selection range, and to improve the bonding strength between the photoconductive layer 12 and the electrodeposited layer 11. If the method is adopted to manufacture the circuit board, the processes of manufacturing a negative film, coating photosensitive oil or pasting a photosensitive dry film, exposing, developing, etching, stripping and the like can be omitted, and the electrodeposition in the through holes 13 can also be carried out without pre-depositing a thin metal layer in a chemical plating mode and then carrying out electroplating, so that the process can be greatly simplified, the efficiency is improved, and the cost is reduced.
Fig. 12a illustrates an embodiment of laying down a photoconductive material based on the electrostatic imaging technique (xenograph). The patterned carrier electrode 41 is an electrode plate, and further includes a photo-curing printing mechanism for selectively photo-curing the patterned photoconductive layer 12 on the patterned carrier electrode 41 or the composite material layer structure model, and the photo-curing printing mechanism and the patterned carrier electrode 41 can move relatively, for example, the photo-curing printing mechanism moves along the direction of the arrow 91 in fig. 12 a. The photocuring printing mechanism in this embodiment is an electrostatic imaging photocuring printing mechanism, which includes a developing engine, a conveyor 75 and a light-permeable and rotatable developing drum, the developing drum is disposed in parallel and corresponding to the molded carrier electrode 41, the developing engine is disposed upstream of the conveyor 75 along the rotation direction of the developing drum, the developing surface of the developing drum selectively forms an electrostatic latent image by the developing engine and selectively adsorbs a light-curable photoconductive material provided by the conveyor 75 by the electrostatic latent image to form a development adhesion layer, the development adhesion layer is conveyed to a position between the developing drum and the molded carrier electrode 41 or the composite material layer structural model by the rotation of the developing drum, a curing light beam 53 irradiates the development adhesion layer between the developing drum and the molded carrier electrode 41 or the composite material layer structural model from the inside of the developing drum to form a photoconductive layer 12 with a preset pattern, photoconductive layer 12 is removed from the developer drum and combined with the patterned carrier electrode 41 or composite layer structural former. The developing drum capable of transmitting light comprises an outer transparent light control conductive layer 58 and an inner transparent conductive layer 57, wherein the light control conductive layer 58 and the transparent conductive layer 57 are attached to each other, and the transparent conductive layer 57 is both light-transmitting and conductive. The feeder 75 is filled with a light-curable photoconductive material having a corresponding polarity of static electricity. The visualization engine may comprise, as shown in fig. 12a, a first electrostatic generator 65 and a visualization light source generating a visualization light beam 52, which may be arranged either inside (as shown in fig. 12a) or outside the visualization drum. The static generator 65 charges static electricity on the surface of the photoconductive layer 58 of the developing drum 36, the developing light beam 52 emitted by the developing light source according to the pattern information of the printing layer selectively irradiates the photoconductive layer 58, the part irradiated to the photoconductive layer 58 is conductive, the static electricity at the part is released by the transparent conductive layer 57 or is communicated with the electrode with the corresponding potential, the part of the photoconductive layer 58 where no light beam is irradiated is still insulated, and the static electricity on the part is still maintained, thereby forming an electrostatic latent image. As the developing drum rotates, the developing drum selectively adsorbs the photoconductive material supplied from the feeder 75 in accordance with the electrostatic latent image, and a development adhesion layer formed of the photoconductive material is formed on the development surface of the developing drum. The developing drum rotating along arrow 92 is simultaneously moved along arrow 91 to lay the photoconductive material on the electrodeposited layer 11 or the shaped carrier electrode 41, while the curing light beam 53 from the curing light source irradiates the photoconductive material toward the electrodeposited layer 11 through the transparent conductive layer 57 and the light-controlling conductive layer 58 to be cured to form the cured photoconductive layer 12, and is combined with the electrodeposited layer 11 or the photoconductive layer of the previous layer. If the printing mold is multi-layered, the spacing between the developer drum and the shaped carrier electrode 41 can also be readjusted, for example, by moving one layer thickness, as indicated by arrow 93 in FIG. 12b, to perform the next layer deposition. Optimally, the spacing between the developer drum and the electrodeposited layer 11 is reasonably controlled so that when the photoconductive material 72 is between the developer drum and the electrodeposited layer 11, the photoconductive material can contact the electrodeposited layer or a photoconductive layer thereon, facilitating direct bonding of the photoconductive material to the photoconductive material and the electrodeposited layer or a photoconductive layer thereon during curing by irradiation of the curing beam 53, and separating "tearing" the photoconductive material from the surface of the developer drum. In addition, optimally, the matching relation between the rotating speed of the developing drum and the moving speed along the arrow 91 is reasonably controlled, so that the developing drum and the electrodeposition layer 11 keep pure rolling, and the forming precision of the photoconductive layer 12 can be improved. Fig. 12b illustrates that the developing beam 52 selectively irradiates the transparent photoconductive layer 58 according to the layer pattern information of the photoconductive layer to form an electrostatic latent image, while the curing beam 53 may not be selectively irradiated. The shaped carrier electrode 41 may be disposed on the elevation stage 32 and may be moved along an arrow 93 by the elevation stage 32. The mode like this can be directly with the selective absorption of photoconductive material to the development rotary drum and convey and carry out the solidification combination on the electro-deposition layer 11, need not adopt the recoverer to retrieve the photoconductive material that does not have the solidification, simplifies the processing procedure, and has reduced the in-process of laying the photoconductive layer to the pollution on electro-deposition layer 11 surface, does benefit to going on of follow-up electro-deposition process. As the developing drum rotates, the curing beam 53 can irradiate all parts of the photoconductive layer 58 through the transparent conductive layer 57, and all parts of the photoconductive layer 58 can be electrically conducted while curing the photoconductive material, so that static electricity can be eliminated through the transparent conductive layer 57, and preparation is provided for later regeneration of an electrostatic latent image. The developer assembly may further include a cleaning device 67 for removing photoconductive material from the developer drum that is not bonded to the electrodeposited layer 11 and remains on the surface of the developer drum.
FIG. 13 shows that the shaped carrier electrode 41 is a cylindrical structure and can rotate, the transparent and conductive roller-shaped anode 45a is disposed in cooperation with the shaped carrier electrode 41, the negative electrode of the power supply 6a is electrically connected to the shaped carrier electrode 41, the positive electrode is electrically connected to the anode 45a, the anode 45a is partially immersed in the ionic liquid 3a, the ion liquid 3a is driven to the photoconductive layer 12 on the molded carrier electrode 41 along with the rotation of the anode 45a, the light beam 51a selectively irradiates to form the electrodeposited layer 11-1, the anode 45b can also be arranged, the negative pole of the power supply 6b is electrically connected with the molded carrier electrode 41, the positive pole is electrically connected with the anode 45b, the anode 45b is partially immersed in the ion liquid 3b, the ion liquid 3b is driven to the photoconductive layer 12 on the shaped carrier electrode 41 along with the rotation of the anode 45b, and the electrodeposition layer 11-2 is formed by the selective irradiation of the light beam 51 b. The electrodeposited layer 11-1 and the electrodeposited layer 11-2 may be the same material or different materials. Then, the electrodeposited layer 11-1 or 11-2 may be cleaned or surface-treated by the cleaner 67 with the rotation of the shaped carrier electrode 41, and then the photoconductive material supplied from the electrostatic latent image adsorption feeder 75 formed on the development surface during the rotation of the developing drum (including the transparent conductive layer 57 and the photoconductive conductive layer 58) forms a photoconductive material development adhesion layer and is laid on the electrodeposited layer 11-1 or 11-2, and the light beam 53 may irradiate or heat-cure the photoconductive material to form a new photoconductive layer 12. Repeating the steps can quickly form the composite material structure. The forming carrier electrode 41 can also continuously rotate, the reciprocating motion of the anode or the electrode plate is avoided, the electrodeposition process and the process of laying the photoconductive layer can be simultaneously carried out, the photoconductive layer and the electrodeposited layer are wound and stacked on the forming carrier electrode 41 in a vortex-like form, and the forming speed can be greatly improved. The embodiment is more suitable for manufacturing the composite material structural model with a cylindrical or arc-shaped structure.
Fig. 14 shows that the forming carrier electrode 41 is a circular electrode disk capable of rotating around a central axis 98, the anode 45 is a circular truncated cone-shaped transparent conductive turntable and can rotate around an axis 96, the negative electrode of the power supply 6 is electrically connected with the forming carrier electrode 41, the positive electrode is electrically connected with the anode 45, the tangent plane at the top of the outer peripheral surface of the transparent conductive turntable is parallel to the forming surface of the forming carrier electrode 41 and can move away from the forming surface, the end with the smaller diameter faces the central axis 98, the transparent conductive turntable is partially immersed in the ionic liquid 3, the transparent conductive turntable forms an ionic liquid layer on the surface protruding out of the ionic liquid 3 by rotating and transmits the ionic liquid layer to be in contact with the photoconductive layer 12, and the light beam 51 selectively irradiates the photoconductive layer 12 from the inside of the transparent conductive turntable towards the direction of the forming carrier electrode 41 for selective electrodeposition. The apparatus may further include a photo-curing printing mechanism, the photo-curing printing mechanism and the forming carrier electrode 41 are relatively far away from each other, the photo-curing printing mechanism includes a truncated cone-shaped transparent drum 56, the top section of the outer peripheral surface of the transparent drum 56 is parallel to the forming surface of the forming carrier electrode 41, the transparent drum 56 rotates around an axis 97, the smaller end of the transparent drum 56 faces the central axis 98 of the forming carrier electrode 41, the transparent drum 56 is partially immersed in the photoconductive material liquid 72, for example, the photoconductive material 72 may be a mixed liquid material of photosensitive resin and photoconductive material powder, the transparent drum 56 forms a photoconductive material liquid layer on the surface protruding from the photoconductive material liquid 72 by rotating and transmits the photoconductive material liquid layer between the transparent drum 56 and the forming carrier electrode 41 or the composite material layer structure model, and the curing light beam 53 selectively irradiates the transparent drum 56 and the forming carrier electrode 41 or the composite material layer structure model from the inside of the transparent drum 56 The liquid layer of the photoconductive material therebetween forms a photoconductive layer 12 of a predetermined pattern. The transparent drum 56 is matched with the shaped carrier electrode 41, and the optimal pure rolling fit relationship between the transparent drum 56 and the shaped carrier electrode 41 is maintained. The shaped carrier electrode 41 in the embodiment shown in fig. 13 and 14 can also rotate continuously to avoid the relative reciprocating motion of the anode or the electrode plate, and can move continuously and unidirectionally, and the electrodeposition process and the light guide layer laying process can be performed simultaneously, so that the light guide layer and the electrodeposition layer are stacked on the shaped carrier electrode 41 layer by layer in a vortex or spiral-like manner, and the shaping speed can be greatly increased. But also the manufacturing of the composite material structure model with a cylindrical, arc-shaped or disc-shaped structure and the like can have better efficiency.
The photoconductive layer 12 or the photoconductive layer 58 in the present invention may be made of photoconductive material, such as organic photoconductive material (photoconductive polymer), such as polyvinylcarbazole, or inorganic photoconductive material, or other photoconductive material, and may form a micro-nano array of photoelectric material, and the photoconductive material changes resistivity by light irradiation according to photoconductive effect (or referred to as photoconductive effect). In addition, the light-operated conducting layer can also adopt a semiconductor material capable of forming a PN junction, such as silicon-based doping, or a material capable of forming a heterojunction and the like, and the materials can generate electromotive force according to the photovoltaic effect during illumination, and realize circuit conduction and current formation. Single crystal silicon, polycrystalline silicon, amorphous silicon, CdTe, CIGS, GaAs, dye sensitization, organic thin films or compounds, etc., or MS junctions or heterojunctions, including homotype heterojunctions (e.g., P-P type heterojunctions, or N-N type heterojunctions) or inversion type heterojunctions (e.g., P-N type heterojunctions), may also be used, and in the present invention, different means are understood to form PN junctions. Conventional electrically conductive and also transparent materials are indium tin oxide materials, aluminum-doped zinc oxide or other transparent and electrically conductive materials, which may be employed for the transparent and electrically conductive shaped carrier electrode 41, or the transparent conductive layer 57 or the transparent conductive plate.
The ionic liquid 3 in the present invention can be a metal salt solution or an electrolyte (e.g. a sulfuric acid solution or a hydrochloric acid solution) in an electroplating, electroforming or electrolytic etching technique, such as a metal of copper, tin, gold, silver, nickel, iron, aluminum, or an alloy, or a metal salt solution or an electrolyte of other metal materials, such as a copper sulfate solution, an electrolytic tin plating solution (e.g. a tin sulfate solution), a nickel sulfate solution (watt solution), an iron chloride or gold chloride solution, a fluoroborate solution, a sodium nitrate solution, a sodium chloride solution, or a sulfamate solution.
The directional terms such as "upper", "lower", "left", "right", etc. used in the description of the present invention are based on the convenience of the specific drawings and are not intended to limit the present invention. In practical applications, the actual orientation may differ from the drawings due to the spatial variation of the structure as a whole, but such variations are within the scope of the invention as claimed.

Claims (21)

1. The utility model provides an electro-deposition processingequipment of combined material layer structure which characterized in that: the device comprises a forming carrier electrode (41), an anode (45) and a power supply (6), wherein a light guide layer (12) formed according to a preset pattern is attached to the forming surface of the forming carrier electrode (41), a through hole (13) is formed in the light guide layer (12) according to the preset pattern, the anode of the power supply (6) is electrically connected with the anode (45), the cathode of the power supply is electrically connected with the forming carrier electrode (41), the light guide layer (12) is covered with ionic liquid (3), the anode (45) is in contact with the ionic liquid (3), a light beam (51) selectively irradiates the light guide layer (12), and the surface of the light guide layer (12) irradiated by the light beam (51) and the through hole (13) are subjected to electrodeposition to form an electrodeposition layer (11) with a controllable shape.
2. An electrodeposition processing apparatus for a composite material layer structure as set forth in claim 1, wherein: the forming carrier electrode (41) is an electrode plate, the anode (45) is a transparent conductive plate, the transparent conductive plate and the side face of the forming carrier electrode (41) where the photoconductive layer (12) is formed are arranged oppositely, ionic liquid (3) is filled between the transparent conductive plate and the photoconductive layer (12), and the light beam (51) selectively irradiates the photoconductive layer (12) through the transparent conductive plate to carry out selective electrodeposition.
3. An electrodeposition processing apparatus for a composite material layer structure as set forth in claim 1, wherein: the molded carrier electrode (41) is an electrode plate, and the device further comprises a box body (31) which is light-transmitting at least in part of the bottom area, the bottom of the box body (31) is arranged opposite to the side face of the molded carrier electrode (41) where the light guide layer (12) is formed, the ionic liquid (3) is loaded in the box body (31), and the light beam (51) selectively irradiates the light guide layer (12) through the light-transmitting area at the bottom of the box body (31) for selective electrodeposition.
4. An electrodeposition processing apparatus for a composite material layer structure as set forth in claim 1, wherein: the anode (45) is a soluble anode made of a metal material corresponding to ions in the ionic liquid (3), and the anode (45) is at least partially immersed in the ionic liquid (3).
5. An electrodeposition processing apparatus for a composite material layer structure as set forth in claim 1, wherein: the forming carrier electrode (41) is an electrode plate, and further comprises a scraper (83) and a return feeder (73), wherein the scraper (83) lays a light-curable photoconductive material liquid layer on the forming carrier electrode (41) or the composite material layer structure model, the light-curable photoconductive material liquid layer is selectively irradiated by a curing light source (53) to form a photoconductive layer (12) with a preset pattern, and the return feeder (73) removes the uncured photoconductive material liquid.
6. An electrodeposition processing apparatus for a composite material layer structure as set forth in claim 1, wherein: the device also comprises a spray head (71), wherein the spray head (71) and the molded carrier electrode (41) can relatively move, and the light guide material for forming the light guide layer (12) is selectively sprayed onto the molded carrier electrode (41) or the composite material layer structural model through the spray head (71).
7. An electrodeposition processing apparatus for a composite material layer structure according to any one of claims 2 to 6, wherein: and an elevating platform (32) for moving the shaped carrier electrode (41) and the photoconductive layer (12) out of and/or into the ionic liquid (3).
8. An electrodeposition processing apparatus for a composite material layer structure as set forth in claim 1, wherein: the molding carrier electrode (41) is an electrode plate, and the side surface of the molding carrier electrode (41) is coated with an insulating layer (44), or the side surface and the other side surface opposite to the molding surface are coated with the insulating layer (44).
9. An electrodeposition processing apparatus for a composite material layer structure as set forth in claim 1, wherein: the forming carrier electrode (41) is an electrode plate or a cylindrical electrode column capable of rotating around a central axis, the anode (45) is a cylindrical transparent conductive rotary drum, the transparent conductive rotary drum and the forming carrier electrode (41) are arranged in parallel and correspondingly and can move relatively, the transparent conductive rotary drum is partially immersed in the ionic liquid (3), the transparent conductive rotary drum forms an ionic liquid layer on the surface protruding out of the ionic liquid (3) through rotation and conveys the ionic liquid layer to be in contact with the photoconductive layer (12), and the light beam (51) selectively irradiates the photoconductive layer (12) from the inside of the transparent conductive rotary drum outwards to carry out selective electrodeposition.
10. An electrodeposition processing apparatus for a composite material layer structure according to claim 9, wherein: and a light-permeable light control conductive layer (58) is attached to the outer peripheral surface of the transparent conductive drum.
11. An electrodeposition processing apparatus for a composite material layer structure as set forth in claim 1, wherein: the forming carrier electrode (41) is an electrode plate or a cylindrical electrode column capable of rotating around a central axis, and the forming carrier electrode further comprises a photocuring printing mechanism for performing selective photocuring on the forming carrier electrode (41) or the composite material layer structural model to form the photoconductive layer (12), the photocuring printing mechanism and the forming carrier electrode (41) can move relatively, the photocuring printing mechanism comprises a cylindrical transparent rotary drum (56), the transparent rotary drum (56) and the forming carrier electrode (41) are arranged in parallel and correspondingly, the transparent rotary drum (56) is partially immersed in the photoconductive material liquid (72), the transparent rotary drum (56) forms a photoconductive material liquid layer on the surface protruding out of the photoconductive material liquid (72) through rotation and conveys the photoconductive material to the position between the transparent rotary drum (56) and the forming carrier electrode (41) or the composite material layer structural model, the curing light beam (53) selectively irradiates the photoconductive material liquid layer between the transparent rotary drum (56) and the forming carrier electrode (41) or the composite material layer structure model from the inside of the transparent rotary drum (56) to form a photoconductive layer (12) with a preset pattern.
12. An electrodeposition processing apparatus for a composite material layer structure as set forth in claim 1, wherein: the forming carrier electrode (41) is an electrode plate or a cylindrical electrode column capable of rotating around a central axis, and further comprises a photocuring printing mechanism used for selectively photocuring the forming photoconductive layer (12) on the forming carrier electrode (41) or a composite material layer structure model, the photocuring printing mechanism and the forming carrier electrode (41) can move relatively, the photocuring printing mechanism is an electrostatic imaging photocuring printing mechanism, the electrostatic imaging photocuring printing mechanism comprises a developing engine, a material conveyor (75) and a light-permeable and rotatable developing drum, the developing drum and the forming carrier electrode (41) are arranged in parallel and correspondingly, the developing engine is arranged at the upstream of the material conveyor (75) along the rotating direction of the developing drum, the surface of the developing drum selectively forms an electrostatic latent image through the developing engine and selectively adsorbs an illumination curable photoconductive material provided by the material conveyor (75) through the electrostatic latent image to form an adhesion developing layer, the development adhesion layer is conveyed between the development drum and the molded carrier electrode (41) or the composite material layer structural model through the rotation of the development drum, and a curing light beam (53) irradiates the development adhesion layer between the development drum and the molded carrier electrode (41) or the composite material layer structural model from the inside of the development drum to form a light guide layer (12) with a preset pattern, wherein the light guide layer is adhered to the molded carrier electrode (41) or the composite material layer structural model.
13. An electrodeposition processing apparatus for a composite material layer structure as set forth in claim 1, wherein: the shaping carrier electrode (41) is for can be around the circular electrode dish of axis pivoted, positive pole (45) are the transparent electrically conductive revolving stage of round platform form, the tangent plane at transparent electrically conductive revolving stage outer peripheral face top corresponds the setting with the shaping surface parallel of shaping carrier electrode (41) and can keep away from the removal relatively, transparent electrically conductive revolving stage part submergence is in ionic liquid (3), transparent electrically conductive revolving stage forms the ionic liquid layer and conveys the ionic liquid layer to and light guide layer (12) contact in outstanding ionic liquid (3) surface through rotating, light beam (51) carry out selective electrodeposition from inside outside selective irradiation light guide layer (12) of transparent electrically conductive revolving stage.
14. An electrodeposition processing apparatus for a composite material layer structure as set forth in claim 1, wherein: the forming carrier electrode (41) is a circular electrode disc capable of rotating around a central axis, the forming carrier electrode further comprises a photocuring printing mechanism, the photocuring printing mechanism and the forming carrier electrode (41) can relatively move away from each other, the photocuring printing mechanism comprises a circular truncated cone-shaped transparent rotary drum (56), a section of the top of the outer peripheral surface of the transparent rotary drum (56) is parallel to and corresponds to the forming surface of the forming carrier electrode (41), one end, with the smaller diameter, of the transparent rotary drum (56) faces the central axis of the forming carrier electrode (41), the transparent rotary drum (56) is partially immersed in photoconductive material liquid (72), the transparent rotary drum (56) forms a photoconductive material liquid layer on the surface protruding out of the photoconductive material liquid (72) through rotation and conveys the photoconductive material to a position between the transparent rotary drum (56) and the forming carrier electrode (41) or a composite material layer structure model, the curing light beam (53) selectively irradiates the photoconductive material liquid layer between the transparent rotary drum (56) and the forming carrier electrode (41) or the composite material layer structure model from the inside of the transparent rotary drum (56) to form a photoconductive layer (12) with a preset pattern.
15. An electrodeposition processing apparatus for a composite material layer structure as set forth in claim 1, wherein: the light-guiding layer (12) is attached to the profiled surface of the profiled carrier electrode (41) by an electrically conductive, easily delaminating layer (42).
16. An electrodeposition processing method of a composite material layer structure, characterized in that an electrodeposition processing apparatus using the composite material layer structure of claim 1, comprises the steps of:
(1) selectively forming a light guide layer (12) on the molding surface of the molding carrier electrode (41) according to a preset pattern, wherein through holes (13) are selectively formed on the light guide layer (12);
(2) selectively irradiating the light guide layer (12) through a light beam (51), wherein the irradiation area of the light beam (51) covers at least partial area of at least one through hole (13), selectively performing ion deposition on the surface of the area, irradiated by the light beam (51), of the light guide layer (12) and the through hole (13) to form an electrodeposited layer (11) with a controllable shape, and combining the light guide layer (12) and the electrodeposited layer (11) to obtain a composite material layer structure model.
17. A method of electro-deposition machining of a composite layer structure according to claim 16, characterised in that: when the multilayer composite material layer structure is processed, the method further comprises the following steps:
(3) continuously and selectively forming a light guide layer (12) according to a preset pattern on the basis of the formed composite material layer structure model, wherein the newly formed light guide layer (12) at least has one through hole (13) and the projection of the surface of the electrodeposition layer (11) in the previous layer is at least partially overlapped with the electrodeposition layer (11) in the previous layer;
(4) selectively irradiating the newly formed photoconductive layer (12) by a light beam (51), wherein the irradiation area of the light beam (51) covers at least partial area of at least one through hole (13), selectively performing ion deposition on the surface of the newly formed photoconductive layer (12) and the through hole (13) to form an electrodeposition layer (11) with controllable shape, and forming conductive connection between the electrodeposition layers (11) of adjacent layers through the electrodeposition layers (11) in the through holes (13);
(5) and (5) repeating the step (3) and the step (4) to mold the light guide layer (12) and the electric deposition layer (11) layer by layer to obtain a multi-level composite material layer structure.
18. A method of electro-deposition machining of a composite layer structure according to claim 16 or 17, characterised in that: the photoconductive layer (12) is formed by adopting a photoconductive material with thermosetting property or light curing, laying the photoconductive material on a molded carrier electrode (41) or a composite material layer structure model through a screen printing technology and then heating and curing or light curing; or the photoconductive layer (12) is formed by selectively spraying a thermosetting or light-curable photoconductive material onto the molded carrier electrode (41) or the composite material layer structural model through a spray head (71) and then heating and curing or photocuring; or the photoconductive layer (12) is formed by light curing through selective irradiation of a curing light beam (53) after a light-curable photoconductive material is laid on the molded carrier electrode (41) or the electrodeposited layer (11) through a scraper (83); or the photoconductive layer (12) is formed by photo-curing through irradiation of a curing light beam (53) after selectively laying a photo-curable photoconductive material on the molded carrier electrode (41) or the electrodeposited layer (11) by an electrostatic imaging photo-curing printing mechanism; or, the photoconductive layer (12) is formed by pressing a prefabricated photoconductive material film (12a) on the molded carrier electrode (41) or the electrodeposited layer (11).
19. A method of electro-deposition machining of a composite layer structure according to claim 16, characterised in that: in step (1), the photoconductive layer (12) completely covers the molding surface of the molded carrier electrode (41) except at the via hole (13).
20. A method of electro-deposition machining of a composite layer structure according to claim 16, characterised in that: and covering a shading material layer (25) on the surface of the multi-level composite material layer structure.
21. A method of electro-deposition machining of a composite layer structure according to claim 17, characterised in that: in the processing process of the multi-layer composite material layer structure, a through hole chain (13y) is arranged at the position close to the edge inside a pre-formed composite material layer structure model, and an electro-deposition layer (11) connected with the through hole chain (13y) in each layer is in conductive connection with a forming carrier electrode (41) through the through hole chain (13 y); or in the process of processing the multi-layer composite material layer structure, a deposition chain (13x) is formed outside a preformed composite material layer structure model in an electro-deposition mode, and the electro-deposition layer (11) connected with the deposition chain (13x) in each layer is in conductive connection with the forming carrier electrode (41) through the deposition chain (13 x).
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105405752A (en) * 2015-12-15 2016-03-16 苏州大学 Fabrication method of flexible nanowire gate-type transparent conductive electrode
CN110016696A (en) * 2019-03-25 2019-07-16 广东工业大学 A kind of micro-electroforming apparatus and its micro- electrocasting method based on photic conductive electrode plate

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105405752A (en) * 2015-12-15 2016-03-16 苏州大学 Fabrication method of flexible nanowire gate-type transparent conductive electrode
CN110016696A (en) * 2019-03-25 2019-07-16 广东工业大学 A kind of micro-electroforming apparatus and its micro- electrocasting method based on photic conductive electrode plate

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