CN113541622A - Power amplification circuit, 5G communication circuit and communication equipment - Google Patents
Power amplification circuit, 5G communication circuit and communication equipment Download PDFInfo
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- CN113541622A CN113541622A CN202010296719.XA CN202010296719A CN113541622A CN 113541622 A CN113541622 A CN 113541622A CN 202010296719 A CN202010296719 A CN 202010296719A CN 113541622 A CN113541622 A CN 113541622A
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- 238000004891 communication Methods 0.000 title claims abstract description 44
- 230000003321 amplification Effects 0.000 title claims abstract description 38
- 238000003199 nucleic acid amplification method Methods 0.000 title claims abstract description 38
- 238000010586 diagram Methods 0.000 description 9
- 230000005540 biological transmission Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000010295 mobile communication Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
- H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
- H03G3/3042—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
- H04B2001/0408—Circuits with power amplifiers
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Abstract
The application discloses power amplification circuit, 5G communication circuit and communication equipment, this power amplification circuit include two bridges at least, two power amplifier and phase shifter, and one power amplifier in two power amplifiers is connected between two bridges, and another power amplifier in two power amplifiers and phase shifter are connected between two bridges. The phase shifter is additionally arranged between the other power amplifier and the two bridges to adjust the phase of the branch where the other power amplifier is located, so that the phase difference between the two branches is changed, and the gain between different frequency bands of the radio frequency amplification circuit system is dynamically adjusted.
Description
Technical Field
The application relates to the field of communication, in particular to a power amplification circuit, a 5G communication circuit and communication equipment.
Background
In the field of mobile communication, since a gain-frequency curve of the rf power amplifier circuit system usually maintains a stable fluctuation value in a communication frequency band, which is very important for a wideband high power device of the fifth generation (5G) communication, the rf power amplifier circuit system is used in the wideband high power device of the 5G communication.
At present, a gain-frequency curve of a radio frequency power amplifier is a horizontal straight line, but in practical application of a radio frequency power amplification circuit system, because an integrated device or a multi-stage circuit is fixed, when a corresponding gain exceeds a fluctuation range under the same frequency condition, a phase of a branch where the radio frequency power amplifier is located is fixed, so that gains between different frequency bands are also fixed.
Disclosure of Invention
The application provides a power amplification circuit, a 5G communication circuit and communication equipment, which are used for dynamically adjusting gains among different frequency bands of a radio frequency amplification circuit system.
In order to solve the technical problem, the application adopts a technical scheme that: a power amplifying circuit comprising at least two bridges, two power amplifiers, one of the two power amplifiers being connected between the two bridges, the other of the two power amplifiers and the phase shifter being connected between the two bridges.
Optionally, the two bridges comprise a first bridge and a second bridge; the two power amplifiers comprise a first power amplifier and a second power amplifier; one end of the first power amplifier and one end of the second power amplifier are both connected with the first bridge; the other end of the first power amplifier is connected with the second bridge; the other end of the second power amplifier is connected with the second bridge through the phase shifter.
Optionally, the fourth terminal of the first bridge is connected to one end of the first power amplifier, and the other end of the first power amplifier is connected to the fourth terminal of the second bridge; the third end of the first bridge is connected with one end of a second power amplifier, and the other end of the second power amplifier is connected with the third end of the second bridge through the phase shifter; the first end of the first bridge is used for receiving a first signal, the second end of the first bridge is grounded through a first resistor, the second end of the second bridge is used for outputting a second signal, and the first end of the second bridge is grounded through a second resistor.
Optionally, the phase shifter is a microstrip line, and is configured to adjust a phase of a branch in which the second power amplifier is located.
Optionally, the power amplification circuit further includes a first phase shifter, and the other end of the first power amplifier is connected to the second bridge through the first phase shifter.
In order to solve the above technical problem, another technical solution adopted by the present application is: A5G communication circuit, the 5G communication circuit includes at least a power amplification circuit and a 5G communication device; the power amplifying circuit is coupled with the 5G communication equipment; the power amplification circuit comprises at least two bridges, two power amplifiers and a phase shifter, wherein one of the two power amplifiers is connected between the two bridges, and the other of the two power amplifiers and the phase shifter are connected between the two bridges.
Optionally, the two bridges comprise a first bridge and a second bridge; the two power amplifiers comprise a first power amplifier and a second power amplifier; one end of the first power amplifier and one end of the second power amplifier are both connected with the first bridge; the other end of the first power amplifier is connected with the second bridge; the other end of the second power amplifier is connected with the second bridge through the phase shifter; one end of the 5G communication device is connected with the first bridge or the second bridge.
Optionally, the fourth terminal of the first bridge is connected to one end of the first power amplifier, and the other end of the first power amplifier is connected to the fourth terminal of the second bridge; the third end of the first bridge is connected with one end of a second power amplifier, and the other end of the second power amplifier is connected with the third end of the second bridge through the phase shifter; the first end of the first bridge is used for receiving a first signal, the second end of the first bridge is grounded through a first resistor, the second end of the second bridge is used for outputting a second signal, and the first end of the second bridge is grounded through a second resistor; one end of the 5G communication device is connected with the first end of the first bridge, or one end of the 5G communication device is connected with the second end of the second bridge.
Optionally, the phase shifter is a microstrip line, and is configured to adjust a phase of the second power amplifier.
In order to solve the above technical problem, another technical solution adopted by the present application is: there is provided a communication device comprising a 5G communication circuit as described above.
The beneficial effect of this application is: different from the prior art, the power amplification circuit at least comprises two bridges, two power amplifiers and a phase shifter, wherein one of the two power amplifiers is connected between the two bridges, and the other one of the two power amplifiers and the phase shifter are connected between the two bridges. The phase shifter is added between the other power amplifier and the two bridges, and the phase of the branch where the other power amplifier is located is adjusted by the phase shifter, so that the phase difference between the two branches is changed, the gain of the radio frequency amplification circuit system between different frequency bands is further dynamically adjusted, and the gain-frequency curve of the radio frequency amplification circuit system is also dynamically adjusted.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic diagram of a model of a power amplifier of the present application;
FIG. 2 is a schematic diagram of a gain-frequency curve of a power amplifier of the present application;
FIG. 3 is a circuit schematic of a first embodiment of the power amplification circuitry of the present application;
FIG. 4 is another circuit schematic of the power amplification circuitry of FIG. 3;
fig. 5 is a graph illustrating a gain-frequency curve of the branch in which the second power amplifier of fig. 3 is located;
fig. 6 is a circuit schematic diagram of a second embodiment of the power amplification circuitry of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The radio frequency is a radio frequency, i.e. a high frequency, and a general household power amplifier such as an audio power amplifier, and a power amplifier for amplifying the radio frequency is a radio frequency power amplifier such as an interphone, a mobile phone, and the like. The power amplifier of radio station, including the transmitting signal of the television station, needs to be amplified by radio frequency power and radiated by antenna.
In the field of mobile communications, radio frequency power amplifiers are an important component of various wireless transmitters. In the front stage circuit of the transmitter, the radio frequency signal power generated by the modulation oscillation circuit is very small, and the radio frequency signal can be fed to an antenna to be radiated after sufficient radio frequency power is obtained through a series of amplifying-buffering stage, intermediate amplifying stage and final power amplifying stage. In order to obtain a sufficiently large rf output power, it is necessary to use an rf power amplifier.
Referring to fig. 1, fig. 1 is a schematic diagram of a power amplifier according to the present invention. The power amplifier has two ports, a first port and a second port as shown in fig. 1. Since the power amplifier generally drives a load, and the characteristics of the load are complex, which determines the risk of using the power amplifier, attention needs to be paid to safe grounding during the use process, and ref in fig. 1 is reference, i.e. means reference or benchmark, generally refers to a reference voltage or reference current, and is a current or voltage quantity which does not change with the environment such as a power supply, temperature and the like and is a fixed value, and here refers to a ground voltage of 0V.
Referring to fig. 2, fig. 2 is a schematic diagram illustrating gain parameters of a power amplifier according to the present invention. In the balanced power amplifier circuit structure, the gain parameter transmitted forward from the second port to the first port of the power amplifier is shown as curve S1 in fig. 2. As shown in fig. 2, at frequency point 2.0GHz, the gain parameter is 18.4 dB; when the frequency point is 3.0GHz, the gain parameter is 15 dB; the difference between the gain parameters is 3.4dB, and the fluctuation of the power amplifier in the pass band is more than 3dB, namely the pass band is more than 3 dB.
The "3 dB passband" means a signal frequency at which a system output signal is attenuated by 3dB from a maximum value in a signal transmission system, and a band between upper and lower cutoff frequencies is referred to as a passband, which is denoted by BW, that is, a 3dB passband. The wider the pass band, the stronger the adaptability of the power amplifying circuit to different frequency signals. The narrower the passband, the greater the ability of the power amplification circuit to select the center frequency of the passband. The passband is used to measure the amplification capability of the amplification circuit for signals of different frequencies. Due to the existence of the reactive elements such as the capacitor, the inductor and the junction capacitor of the semiconductor device in the amplifying circuit, the value of the amplification factor is reduced and phase shift is generated when the frequency of the input signal is lower or higher.
In general, the power amplification circuit is only suitable for amplifying signals in a certain specific frequency range. Through analysis, the frequency range with the amplitude value greater than or equal to 0.707 times of the maximum value in the real number coordinate is considered; in logarithmic scale, again refers to the frequency range of maximum amplitude minus 3 dB. It generally refers to a frequency band and is therefore referred to as a passband.
To enhance the selection capability of the power amplifier circuit for the center frequency of the passband, it is necessary to optimize the in-band ripple greater than 3dB, please refer to fig. 3, in which fig. 3 is a circuit diagram of a first embodiment of the power amplifier circuit system. The power amplification circuit system provides a power amplification circuit including at least two bridges (11, 12), two power amplifiers (21, 22), and a phase shifter 31, one power amplifier 21 of the two power amplifiers (21, 22) being connected between the two bridges (11, 12), and the other power amplifier 22 of the two power amplifiers (21, 22) and the phase shifter 31 being connected between the two bridges (11, 12).
By adding a phase shifter 31 between the other power amplifier 22 and the two bridges (11, 12), the phase shifter 31 is used to adjust the phase of the branch where the other power amplifier 22 is located, so as to change the phase difference between the two branches, thereby dynamically adjusting the gain of the rf amplifying circuit system between different frequency bands, i.e. dynamically adjusting the gain-frequency curve of the rf amplifying circuit system.
In particular, the two bridges (11, 12) comprise a first bridge 11 and a second bridge 12; the two power amplifiers (21, 22) comprise a first power amplifier 21 and a second power amplifier 22; one end of the first power amplifier 21 and one end of the second power amplifier 22 are both connected to the first bridge 11; the other end of the first power amplifier 21 is connected to the second bridge 12; the other end of the second power amplifier 22 is connected to the second bridge 12 via a phase shifter 31.
Referring to fig. 4, another circuit diagram of the power amplifying circuit system in fig. 4 is shown. Wherein the first power amplifier 21 and the second power amplifier 22 each have two ports and the first bridge 11 and the second bridge 12 each have four ports.
Specifically, as shown in fig. 4, the fourth terminal of the first bridge 11 is connected to one end of a first power amplifier 21, and the other end of the first power amplifier 21 is connected to the fourth terminal of the second bridge 12; the third terminal of the first bridge 11 is connected to one terminal of a second power amplifier 22, and the other terminal of the second power amplifier 22 is connected to the third terminal of the second bridge 12 through a phase shifter 31; the first end of the first bridge 11 is used for receiving a first signal, the second end of the first bridge 11 is grounded through a first resistor 111, the second end of the second bridge 12 is used for outputting a second signal, and the first end of the second bridge 12 is grounded through a second resistor 121.
The resistance values of the first resistor 111 and the second resistor 121 may be 50 ohms.
Wherein, for safety during use, the first power amplifier 21 and the second power amplifier 22 are both safely grounded; both the first bridge 11 and the second bridge 12 are also safely grounded.
Further, the phase shifter 31 may be a microstrip line 311 for adjusting the phase of the branch in which the second power amplifier 22 is located. The microstrip line 311 is a microwave transmission line formed by a single conductor strip supported on a dielectric substrate, and has the characteristics of small volume, light weight, wide use frequency band, high reliability, low manufacturing cost and the like. Since the thickness and width of the microstrip line 311 are controllable, the characteristic impedance is also controllable. By adjusting the relevant parameters of the microstrip line 311, the phase of the branch where the second power amplifier 22 is located can be adjusted, so as to change the phase difference between the branch where the first power amplifier 21 is located and the branch where the second power amplifier 22 is located, and further adjust the gain between different frequency bands of the power amplification system. The power amplification system can save cost in the case of not increasing the integrated device multi-stage circuit.
Referring to fig. 5, fig. 5 is a schematic diagram of a gain-frequency curve of a branch in which the second power amplifier of fig. 3 is located. In the branch of the second power amplifying circuit 22, the gain parameter of the forward transmission from the second port to the first port of the second power amplifier 22 is as shown in curve S2 of fig. 5. Specifically, the microstrip line 311 may be 1645 mils, where 1mil equals 1/1000inch equals 0.0254 mm. The resistance of the microstrip line 311 may be 50 ohms, and the frequency of the microstrip line 311 is 2.5 GHz.
As shown in fig. 5, at frequency point 2.0GHz, the gain parameter is the lowest, which is 14.5 dB; when the frequency point is 3.0GHz, the gain parameter is about 14.6 dB; when the frequency point is 2.45GHz, the gain parameter is about 16.1 dB; the subtraction of the maximum gain parameter and the minimum gain parameter is about 1.6dB, which can result in that the fluctuation in the pass band of the branch in which the second power amplifier 22 is located is about 1.6dB, which is less than 50% of the fluctuation in the pass band of fig. 2, thereby meeting the design requirement.
Further, referring to fig. 6, fig. 6 is a circuit diagram illustrating a power amplifying circuit system according to a second embodiment of the present application. The power amplification circuit further comprises a first phase shifter 32, and the other end of the first power amplifier 21 is connected to the second bridge 12 through the first phase shifter 32.
Specifically, a first phase shifter 32 is added between the first power amplifier 21 and the two bridges (11, 12), the phase of the branch where the first power amplifier 21 is located is adjusted by adjusting parameters through the first phase shifter 32, and the phase of the branch where the second power amplifier 22 is located is changed by adjusting parameters through the phase shifter 31, so that the phase difference between the branch where the first power amplifier 21 is located and the branch where the second power amplifier 22 is located is changed, and further, the gain of the radio frequency amplification circuit system between different frequency bands is dynamically adjusted, that is, the gain-frequency curve of the radio frequency amplification circuit system is dynamically adjusted.
In order to solve the above technical problem, another technical solution adopted by the present application is to provide a 5G communication circuit, as shown in fig. 3, the 5G communication circuit at least includes a power amplifying circuit and a 5G communication device; the power amplifying circuit is coupled with the 5G communication equipment; the power amplification circuit comprises at least two bridges (11, 12), two power amplifiers (21, 22) and a phase shifter 31, one of the two power amplifiers (21, 22) being connected between the two bridges (11, 12), the other of the two power amplifiers (21, 22) being connected between the two bridges (11, 12) and the phase shifter 31.
By adding the phase shifter 31 between the other power amplifier 22 and the two bridges (11, 12), the phase shifter 31 adjusts the phase of the branch where the other power amplifier 22 is located, so as to change the phase difference between the two branches, and further dynamically adjust the gain of the rf amplifying circuit system between different frequency bands, that is, dynamically adjust the gain-frequency curve of the rf amplifying circuit system.
As shown in fig. 3 and 4, the two bridges include a first bridge 11 and a second bridge 12; the two power amplifiers include a first power amplifier 21 and a second power amplifier 22; one end of the first power amplifier 21 and one end of the second power amplifier 22 are both connected to the first bridge 11; the other end of the first power amplifier 21 is connected to the second bridge 12; the other end of the second power amplifier 22 is connected to the second bridge 12 through a phase shifter 31; one end of the 5G communication device is connected to the first bridge 11 or the second bridge 12.
Specifically, the fourth terminal of the first bridge 11 is connected to one end of a first power amplifier 21, and the other end of the first power amplifier 21 is connected to the fourth terminal of the second bridge 12; the third terminal of the first bridge 11 is connected to one terminal of a second power amplifier 22, and the other terminal of the second power amplifier 22 is connected to the third terminal of the second bridge 12 through a phase shifter 31; the first end of the first bridge 11 is used for receiving a first signal, the second end of the first bridge 11 is grounded through a first resistor 111, the second end of the second bridge 12 is used for outputting a second signal, and the first end of the second bridge 12 is grounded through a second resistor 121; one terminal of the 5G communication device is connected to a first terminal of the first bridge 11, or one terminal of the 5G communication device is connected to a second terminal of the second bridge 12.
The phase shifter 31 is a microstrip line 311 for adjusting the phase of the second power amplifier 22.
Optionally, the power amplifying circuit further includes a first phase shifter 32, and the other end of the first power amplifier 21 is connected to the second bridge 12 through the first phase shifter 32.
Specifically, a first phase shifter 32 is added between the first power amplifier 21 and the two bridges (11, 12), the phase of the branch where the first power amplifier 21 is located is adjusted by adjusting parameters through the first phase shifter 32, and the phase of the branch where the second power amplifier 22 is located is adjusted by adjusting parameters through matching with the phase shifter 31, so that the phase difference between the branch where the first power amplifier 21 is located and the branch where the second power amplifier 22 is located is changed, and further, the gain of the radio frequency amplification circuit system between different frequency bands is dynamically adjusted, that is, the gain-frequency curve of the radio frequency amplification circuit system is dynamically adjusted.
The present application further proposes a communication device comprising a 5G communication circuit as described above.
The above embodiments are merely examples, and not intended to limit the scope of the present application, and all modifications, equivalents, and flow charts using the contents of the specification and drawings of the present application, or those directly or indirectly applied to other related arts, are included in the scope of the present application.
Claims (10)
1. A power amplification circuit comprising at least two bridges, two power amplifiers and a phase shifter, one of the two power amplifiers being connected between the two bridges, the other of the two power amplifiers and the phase shifter being connected between the two bridges.
2. The power amplification circuit of claim 1, wherein the two bridges comprise a first bridge and a second bridge; the two power amplifiers comprise a first power amplifier and a second power amplifier; one end of the first power amplifier and one end of the second power amplifier are both connected with the first bridge; the other end of the first power amplifier is connected with the second bridge; the other end of the second power amplifier is connected with the second bridge through the phase shifter.
3. The power amplifier circuit according to claim 2, wherein the fourth terminal of the first bridge is connected to one terminal of the first power amplifier, and the other terminal of the first power amplifier is connected to the fourth terminal of the second bridge; the third end of the first bridge is connected with one end of a second power amplifier, and the other end of the second power amplifier is connected with the third end of the second bridge through the phase shifter; the first end of the first bridge is used for receiving a first signal, the second end of the first bridge is grounded through a first resistor, the second end of the second bridge is used for outputting a second signal, and the first end of the second bridge is grounded through a second resistor.
4. The power amplifier circuit according to claim 3, wherein the phase shifter is a microstrip line for adjusting the phase of the branch in which the second power amplifier is located.
5. The power amplification circuit of claim 2, further comprising a first phase shifter, wherein the other end of the first power amplifier is connected to the second bridge through the first phase shifter.
6. A5G communication circuit, characterized in that the 5G communication circuit comprises at least a power amplification circuit and a 5G communication device; the power amplifying circuit is coupled with the 5G communication equipment; the power amplification circuit comprises at least two bridges, two power amplifiers and a phase shifter, wherein one of the two power amplifiers is connected between the two bridges, and the other of the two power amplifiers and the phase shifter are connected between the two bridges.
7. The 5G communication circuit according to claim 6, wherein the two bridges comprise a first bridge and a second bridge; the two power amplifiers comprise a first power amplifier and a second power amplifier; one end of the first power amplifier and one end of the second power amplifier are both connected with the first bridge; the other end of the first power amplifier is connected with the second bridge; the other end of the second power amplifier is connected with the second bridge through the phase shifter; one end of the 5G communication device is connected with the first bridge or the second bridge.
8. The 5G communication circuit according to claim 7, wherein the fourth terminal of the first bridge is connected to one terminal of the first power amplifier, and the other terminal of the first power amplifier is connected to the fourth terminal of the second bridge; the third end of the first bridge is connected with one end of a second power amplifier, and the other end of the second power amplifier is connected with the third end of the second bridge through the phase shifter; the first end of the first bridge is used for receiving a first signal, the second end of the first bridge is grounded through a first resistor, the second end of the second bridge is used for outputting a second signal, and the first end of the second bridge is grounded through a second resistor; one end of the 5G communication device is connected with the first end of the first bridge, or one end of the 5G communication device is connected with the second end of the second bridge.
9. The 5G communication circuit according to claim 8, wherein the phase shifter is a microstrip line for adjusting the phase of the second power amplifier.
10. A communication device comprising the 5G communication circuit according to any one of claims 7 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010296719.XA CN113541622A (en) | 2020-04-15 | 2020-04-15 | Power amplification circuit, 5G communication circuit and communication equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010296719.XA CN113541622A (en) | 2020-04-15 | 2020-04-15 | Power amplification circuit, 5G communication circuit and communication equipment |
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| Publication Number | Publication Date |
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| CN113541622A true CN113541622A (en) | 2021-10-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010296719.XA Pending CN113541622A (en) | 2020-04-15 | 2020-04-15 | Power amplification circuit, 5G communication circuit and communication equipment |
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