CN113540359B - Self-driven short wave infrared response organic photoelectric synaptic flexible device and application thereof - Google Patents

Self-driven short wave infrared response organic photoelectric synaptic flexible device and application thereof Download PDF

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CN113540359B
CN113540359B CN202110635970.9A CN202110635970A CN113540359B CN 113540359 B CN113540359 B CN 113540359B CN 202110635970 A CN202110635970 A CN 202110635970A CN 113540359 B CN113540359 B CN 113540359B
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conjugated polymer
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CN113540359A (en
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黄辉
陈皓
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University of Chinese Academy of Sciences
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10Organic polymers or oligomers
    • H10K85/111Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract

The invention discloses a narrow band gap conjugated polymer based on benzodithiophene diazole and telluro-thiophene and application thereof in self-driven short wave infrared response organic photoelectric synaptic flexible devices. The narrow bandgap polymer disclosed by the invention has good solubility, the spectrum absorption range covers the visible light region, the near infrared band and part of the short wave infrared band, and the tellurium-tellurium interaction among polymer chains promotes the close packing of molecules, so that the narrow bandgap polymer has a high dielectric constant and is favorable for dissociation of photogenerated excitons. Meanwhile, due to the extremely unbalanced hole and electron transmission capability of the polymer, electrons with slower transmission become trap centers, so that holes of an external circuit are continuously tunneled into the device to generate photoconductive effect. The short wave infrared response prepared based on the mechanism is in response to flexible devices at two ends of the organic photoelectric synapse, can work without external bias, simulates the behaviors of multiple nerve synapses, and achieves good effects.

Description

Self-driven short wave infrared response organic photoelectric synaptic flexible device and application thereof
Technical Field
The invention relates to the field of organic photoelectric synaptic devices, in particular to a self-driven short-wave infrared response organic photoelectric synaptic flexible device.
Background
Conventional von neumann computing systems suffer from a number of problems due to the physical separation of the memory module and the processor, such as additional power consumption from the data transfer process, limited computing speed, unstructured real-time information processing, and the like. Neuromorphic computation is considered to be one of the most promising approaches to solve von neumann bottlenecks due to its advantages of adaptive learning, high parallel computing, and low power consumption. An important premise for achieving neuromorphic calculations is the development of neurosynaptic devices that mimic the behavior of biological synapses. Electrical neurosynaptic devices are the first developed ones, but their overall optimization under overall bandwidth, connectivity, density, etc. is very challenging. In recent years, artificial synapses using light as a stimulus response have been developed, and light has characteristics such as high bandwidth, low crosstalk, low energy consumption, no delay, and the like, and can directly simulate vital nerve behaviors such as vision, as compared with electrical nerve synapses.
First, the energy consumption problem is a challenge for neurosynaptic devices. While the primary nerve synapse behavior of the human body is in the range of tens to hundreds of femtojoules, most of the current photoelectric synapse devices are three-terminal phototransistor structures, and are often required to be served under higher driving voltage, so that large energy consumption is avoided as much as possible in the microelectronics field, even voltage inevitably causes heat accumulation, and further the performance of the devices is affected, and therefore, many people make efforts on reducing the energy consumption of the synapse devices.
Secondly, most of the human external information acquisition paths come from vision, and in order to simulate human vision, a plurality of photoelectric synaptic devices show excellent performance on visible light stimulation, but in the artificial intelligence field, the human visual response range is expected to be widened, and more infrared light, ultraviolet light and the like which cannot be seen by human can be perceived and calculated. Particularly, the infrared light has wide application in the fields of military, remote control, optical communication and the like.
Disclosure of Invention
The invention aims at the problems existing in the prior art and provides an application of a high dielectric constant and narrow band gap conjugated polymer based on benzodithiophene diazole and telluro-thiophene in a self-driven short wave infrared response organic photoelectric synaptic flexible device. The narrow band gap polymer disclosed by the invention has good solubility, and the spectrum absorption range covers the visible light region, the near infrared band and part of the short wave infrared band. Because of the introduction of tellurium-tellurium units, tellurium-tellurium interactions among polymer chains promote close packing of molecules, so that the polymer has a higher relative dielectric constant and is favorable for dissociation of photogenerated excitons. Meanwhile, due to the extremely unbalanced hole and electron transmission capability of the polymer, electrons with slower transmission become trap centers, so that holes of an external circuit are continuously tunneled into the device to generate photoconductive effect. Therefore, the polymer can be used for preparing short-wave infrared response organic photoelectric synaptic flexible devices by the mechanism, and can work without external bias, thereby achieving good effects.
In order to achieve the above object, in a first aspect, the present invention provides an application of a narrow bandgap conjugated polymer based on benzodithiophene diazole and telluro-thiophene in preparing an organic photoelectric synaptic flexible device for room temperature short wave infrared response, which is characterized in that: the conjugated polymer has the structure shown in the following formula (I):
wherein n is an integer of 4 to 20 inclusive.
In the solution according to the invention, the photoconductive effect is advantageously produced by extremely unbalanced carrier transport.
In the technical scheme of the invention, the strong tellurium-tellurium interaction among molecular chains promotes the close packing of molecules due to the introduction of the tellurium-phenone units, so that the photo-generated exciton dissociation is facilitated by the high dielectric constant.
On the other hand, the invention also provides an application of the narrow-band gap conjugated polymer based on the benzodithiophene diazole and the tellurothiophene in preparing an organic photoelectric synaptic flexible device for room temperature short wave infrared response.
In another aspect, the invention provides the use of the narrow bandgap conjugated polymer as an optoelectronic sensing material for the preparation of a visual artificial synapse device.
On the other hand, the invention also provides an application of the narrow-band gap conjugated polymer based on the benzodithiophene diazole and the tellurothiophene in preparing self-driven visual artificial synapse flexible devices.
The narrow-band gap conjugated polymer based on the benzodithiophene diazole and the tellurothiophene provided by the embodiment of the invention has good solubility and strong absorbance, and the absorption range extends from a visible light region to 2000nm, so that the polymer can be used as a short-wave infrared material to be applied to photoelectric synapses, and a better effect is obtained. Meanwhile, the self-driven organic flexible photoelectric synaptic device has a high relative dielectric constant, is favorable for dissociation of photogenerated excitons, and generates photoconductive effect in the operation of the device, so that the self-driven organic flexible photoelectric synaptic device is realized, and various synaptic behaviors are simulated.
Description of the drawings:
FIG. 1 is an ultraviolet-visible absorption spectrum of a conjugated polymer according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a flexible polymer organic photoelectric synaptic device made of a conjugated polymer as a photoelectric conversion material according to an embodiment of the present invention;
FIG. 3 is a graph showing current versus time curves for a conjugated polymer for a photovoltaic synapse at different wavelengths when the bias voltage is 0V, according to an embodiment of the present invention;
FIG. 4 is a graph showing current versus time for a conjugated polymer for a photovoltaic synapse at a bias of 0V for two consecutive laser stimuli at 1342nm wavelength in accordance with an embodiment of the present invention;
FIG. 5 is a graph showing current versus time for a conjugated polymer for a photovoltaic synapse at 1342nm wavelength laser at different stimulus frequencies at a bias voltage of 0V, in accordance with an embodiment of the present invention.
FIG. 6 is a graph of current versus time for different wavelengths for a photovoltaic synapse at a bias voltage of 0V using conjugated polymers.
FIG. 7 is a graph of current versus time for a conjugated polymer for a photovoltaic synapse under 1342nm wavelength laser stimulation twice consecutively at a bias of 0V.
FIG. 8 shows the results of a test of the conjugated polymer PBBT-2OT conjugated polymer under the same device structure.
FIG. 9 is a graph of current versus time for a conjugated polymer for a 1342nm wavelength laser at different stimulation frequencies (2 Hz,1 Hz,0.5 Hz) with a bias voltage of 0V for a photovoltaic synapse.
Detailed Description
The technical scheme of the invention is further described in detail through the drawings and the embodiments. It should be noted that the following examples are not intended to limit the scope of the present invention, and any modifications and variations made on the present invention are within the scope of the present invention.
Example 1
The embodiment provides a conjugated polymer based on benzodithiophene diazole and telluro-thiophene, the structural formula of which is shown as the formula (I);
in the structural general formula of the formula I, n is an integer greater than or equal to 4 and less than 20. And the polymer in formula I is designated PBTT. The ultraviolet-visible-infrared absorption spectrum of the polymer is shown in fig. 1, and from the spectrum absorption, it can be seen that the polymer has wide absorption in the visible and most of the short-wave infrared regions, is a good short-wave infrared material, and can be used for preparing organic short-wave infrared photoelectric synapses. FIG. 2 is a frequency-dielectric constant curve fitted for a device of structure ITO/PEDOT: PSS/PBTT/Al, which gives a relative dielectric constant of 5.8, which is a relatively high value in organic polymers. And polymers such as PBBT-2OTThe dielectric constant of (a) is only 3.5 (fig. 3). Fig. 4 shows carrier mobility as measured by space charge limited current method using PBTT as a single carrier transport device, and it can be seen that PBTT is a bipolar organic semiconductor with hole mobility that is approximately an order of magnitude higher than electron mobility, and this extremely unbalanced carrier transport causes electrons in the device to become trap centers, thereby creating a photoconductive effect.
Example III
This example provides a method for preparing the polymer PBTT of formula (II) above.
(1) Under the protection of inert gas and under the catalysis of tris (dibenzylideneacetone) dipalladium and tris (o-methylphenyl) phosphorus, 4,8-Bis [5-bromo-4- (2-octydodecyl) -2-thienyl ] -2λ4δ2-benzol [1,2-c:4,5-c' ] -Bis [1,2,5] thiadiazole (M1) and 2,5-Bis (trimethylstannyl) tellophene (M2) are mixed in an organic solvent to obtain a mixed solution.
In this method, the molar ratio of 4,8-Bis [ 5-bromo4- (2-octydodecyl) -2-thienyl ] -2λ4δ2-benzo1, 2-c:4,5-c' ] -Bis [1,2,5] thiadiazole to 2,5-Bis (trimethylstannyl) tellophene is 1:0.99-1.05, preferably 1:1. The amount of tris (dibenzylideneacetone) dipalladium is 2-4% of the molar amount of 4,8-Bis [5-bromo-4- (2-octydodecyl) -2-thiyl ] -2λ4δ2-benzol [1,2-c:4,5-c '] -Bis [1,2,5] thiadiazole, and the amount of tris (o-methylphenyl) phosphorus is 8% -12% of the molar amount of 4,8-Bis [5-bromo-4- (2-octydodecyl) -2-thiyl ] -2λ4δ2-benzol [1,2-c:4,5-c' ] -Bis [1,2,5] thiadiazole. The organic solvent is chlorobenzene.
In this example, 4,8-Bis [ 5-bromo4- (2-octydodecyl) -2-thienyl ] -2λ4δ2-benzol [1,2-c:4,5-c' ] -Bis [1,2,5] thiadiazole was synthesized according to the method provided in the following literature: teck Lip Tam, hairong Li, fengxia Wei, ke Jie Tan, christian Kloc, yeng Ming Lam, suboth G.Mhaisalar, and Andrew C.Grimsdale ORGANIC LETTERS,2010, 12,3340.
2,5-bis (trimethylstannyl) tellophene was synthesized according to the procedure provided in the following: yang, l.; gu, w.; lv, l.; chen, y; ye, p.; wu, j; hong, l.; peng, a.; huang, h. Triplet Tellurophene-based Acceptors for Organic Solar Cells, angewandte Chemie International Edition,2018,57,1096-1102.
(2) Dropping the obtained mixed solution into methanol to precipitate solid, performing Soxhlet extraction on the precipitated solid by adopting a Soxhlet extractor, concentrating the polymer solution obtained by Soxhlet extraction, then dropping the concentrated solution into methanol, and obtaining the precipitated solid which is the narrow band gap conjugated polymer.
Example III
In a third embodiment, a method for preparing the polymer PBTT represented by the above formula (II) is provided.
First, the above formula is labeled M1, M2 as reactant compounds M1 and M2, respectively.
To a 15ml Schlenk tube under nitrogen, 107.7mg (0.10 mmol) of compound M1, 50.5mg (0.10 mmol) of compound M2,3.6mg (4 mol%) of Pd2 (dba) 3, 2.4mg (8 mol%) of P- (o-Tol), 2.0ml of chlorobenzene were added and the reaction was stirred at 145℃for 3 days.
Then blocked with 2-tributylstannylthiophene and 2-bromothiophene in sequence and the reaction stopped.
The reaction mixture was then added dropwise to 200 ml of methanol, the solid was precipitated, and dried to give 96mg of the product in a crude yield of 87.5%.
Finally, soxhlet extraction was performed on the crude product, which was performed in the order of acetone, n-hexane, tetrahydrofuran and chloroform, and the chloroform fraction was concentrated and added to methanol to obtain 25mg of polymer in 26% yield.
Example IV
The method of using the narrow bandgap copolymer in the present embodiment for preparing an electro-synaptic device comprises:
weighing 10mg of the polymer obtained in the third embodiment, dissolving in 0.25mL of ultra-dry o-dichlorobenzene, heating and stirring at 60 ℃ for 2 hours until the polymer is completely dissolved, and preparing a photoactive layer film with uniform thickness on a PET substrate plated with a gold electrode by spin coating or other modes; in a specific embodiment, the active layer has a thickness of 80nm. Finally, a device structure as shown in fig. 5 is prepared. The device comprises: flexible substrate (PET)/electrode (Au)/photoactive layer (narrow bandgap conjugated polymer).
FIG. 6 is a graph of current versus time for different wavelengths for a photovoltaic synapse at a bias voltage of 0V using conjugated polymers. It can be seen that the dark current is stable without illumination and that the dark current is stable with the same illumination intensity (100 mW/cm 2 ) The photocurrent of the photodetector was significantly enhanced and increased continuously under light irradiation of different wavelengths (532 nm,660nm, 910 nm,1342nm,1850 nm). The current does not return to the initial position immediately after the illumination has stopped, but slowly decreases with a certain hysteresis.
FIG. 7 is a graph of current versus time for a conjugated polymer for a photovoltaic synapse under 1342nm wavelength laser stimulation twice consecutively at a bias of 0V. It can be seen that after a continuous second firing, the current reaches a greater value than the first firing, which is a double pulse facilitation behavior of the synapse, an manifestation of short range plasticity.
FIG. 8 shows the results of testing the conjugated polymer PBBT-2OT conjugated polymer in the same device structure, wherein the polymer does not exhibit a photo-response at an operating voltage of 0V, but exhibits a sustained current rise when a bias voltage is applied to-1V, indicating that the low dielectric constant material does not have the self-driven electro-optic synapse property.
FIG. 9 is a graph of current versus time for a conjugated polymer for a 1342nm wavelength laser at different stimulation frequencies (2 Hz,1 Hz,0.5 Hz) with a bias voltage of 0V for a photovoltaic synapse. It can be seen that the values reached by the current are different in magnitude after the short-wave infrared light with different frequencies is stimulated for ten times simultaneously, which shows the frequency dependence characteristic of the photoelectric synapse, and the transformation from short-range plasticity to long-range plasticity is realized through the adjustment of the stimulation frequency.

Claims (6)

1. The application of a narrow bandgap conjugated polymer based on benzodithiophene diazole and telluro-thiophene in preparing an organic photoelectric synaptic flexible device based on room temperature short wave infrared response is characterized in that: the conjugated polymer has the following structure (II):
wherein n is an integer of 4 to 20 inclusive.
2. The use according to claim 1, wherein: extremely unbalanced carrier transport is advantageous for photoconductive effect generation.
3. Use according to claim 1 or 2, characterized in that the strong tellurium-tellurium interactions between the molecular chains promote a close packing of the molecules due to the introduction of the tellurium-phenoxide units, whereby a high dielectric constant favors the dissociation of the photogenerated excitons.
4. Use of a conjugated polymer of formula (II) according to claim 1 for the preparation of an organic electro-optical synaptic flexible device responsive to short wave infrared at room temperature.
5. Use of a conjugated polymer of formula (II) according to claim 1 as a photo-electric sensing material for the preparation of a visual artificial synapse device.
6. Use of a narrow bandgap conjugated polymer based on benzodithiophene diazole and telluro-phenone based on the use of a conjugated polymer of formula (II) according to claim 1 for the preparation of self-driven visual artificial synapse flexible devices.
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