CN113540335A - S-doped SnSe/CNTs composite flexible film and preparation method thereof - Google Patents

S-doped SnSe/CNTs composite flexible film and preparation method thereof Download PDF

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CN113540335A
CN113540335A CN202110802962.9A CN202110802962A CN113540335A CN 113540335 A CN113540335 A CN 113540335A CN 202110802962 A CN202110802962 A CN 202110802962A CN 113540335 A CN113540335 A CN 113540335A
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flexible film
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cnts
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CN113540335B (en
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杨艳玲
薛帆
侯小江
锁国权
冯雷
叶晓慧
张荔
和茹梅
刘佳隽
丁文婷
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Shaanxi University of Science and Technology
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    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
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Abstract

The invention discloses an S-doped SnSe/CNTs composite flexible film and a preparation method thereof, belonging to the technical field of nano energy thermoelectric materials. The preparation method comprises the following steps: mixing Na2SeO3And SnCl2·2H2Dissolving O in a solvent A to obtain a solution A, dissolving a monomer S in the solution A to obtain a solution B, and ultrasonically dispersing CNTs in the solution B to obtain a solution C; carrying out solvothermal reaction on the solution C to obtain a product system, and drying the product system after centrifugal cleaning to obtain a dried product D; ultrasonically dispersing the dried product D in a solvent B, then carrying out vacuum filtration to obtain a film E, drying to obtain an S-doped SnSe/CNTs composite flexible film, wherein the S-doped SnSe/CNTs composite flexible film is SnSe1‑xSxthe/CNTs composite flexible film has x more than 0 and less than or equal to 0.05. The S-doped SnSe/CNTs composite flexible film prepared by the preparation method improves the conductivity while maintaining the flexibility of the composite film.

Description

S-doped SnSe/CNTs composite flexible film and preparation method thereof
Technical Field
The invention belongs to the technical field of nano energy thermoelectric materials, and relates to an S-doped SnSe/CNTs composite flexible film and a preparation method thereof.
Background
In the combustion process of fossil fuels such as coal, oil, natural gas, etc., only about 30% to 40% of energy can be effectively utilized, and the remaining 60% to 70% of energy is discharged as waste heat and wasted. With the increasing severity of energy and environmental problems, the development of new and efficient green and clean energy technologies is urgent. The thermoelectric conversion technology can directly convert waste heat into electric energy for recycling, secondary pollution of carbon dioxide, nitrogen dioxide, carbon monoxide, sulfur dioxide and the like cannot be generated in the process, and various natural heat energy sources such as solar energy, geothermal energy and the like can be effectively utilized for electric energy conversion. In addition, the urgent need for environmentally friendly, stable, long-life power supplies has driven the explosion of the miniaturized and integrated electronics (including wearable and medical implantable devices) market. Flexible thermoelectric materials and devices are receiving increasing attention because they are capable of converting heat directly into electrical energy through integration with a heat source. However, the flexible inorganic thermoelectric thin film lacks mechanical flexibility, and therefore, it is necessary to design a flexible thermoelectric material that can maintain thermoelectric conversion efficiency while having a certain flexibility.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention aims to provide an S-doped SnSe/CNTs composite flexible film and a preparation method thereof, which can improve the conductivity while maintaining the flexibility of the composite film.
In order to achieve the purpose, the invention adopts the following technical scheme to realize the purpose:
the invention discloses a preparation method of an S-doped SnSe/CNTs composite flexible film, which comprises the following steps:
1) mixing Na2SeO3And SnCl2·2H2Dissolving O in solvent A to obtain solution A, and dissolving in solvent A to obtain solution A2-Ion content and Se2-The ion ratio is 1-x: x, x is more than 0 and less than or equal to 0.05, the monomer S is dissolved in the solution A to obtain a solution B, and the CNTs are ultrasonically dispersed in the solution B to obtain a solution C; 2) carrying out solvothermal reaction on the solution C to obtain a product system, and drying the product system after centrifugal cleaning to obtain a dried product D; 3) ultrasonically dispersing the dried product D in a solvent B, carrying out vacuum filtration to obtain a film E, and drying the film E to obtain SnSe1-xSxAnd x is more than 0 and less than or equal to 0.05, thus obtaining the S-doped SnSe/CNTs composite flexible film.
Preferably, SnCl2·2H2The reaction charge ratio of O to CNTs is 1-10 mmol: 0.1-0.5 mg;
Na2SeO3，SnCl2·2H2the molar ratio of the reaction feeding of O and the simple substance S is 1-x:1: x, wherein x is more than 0 and less than or equal to 0.05.
Preferably, SnCl2·2H2The reaction feeding ratio of the O to the solvent A to the solvent B is 1-10 mmol: 40mL of: 10 mL.
Preferably, solvent a is ethylene glycol and solvent B is ethanol.
Preferably, the reaction parameters of the solvothermal reaction include: the temperature is 180-230 ℃, and the time is 12-36 h.
Preferably, the drying operating parameters of the dried product D comprise: the time is 8-12 h, and the temperature is 70 ℃.
Preferably, the suction filtration time of the vacuum filtration is 0.5-2 h.
Preferably, the drying treatment of the film E comprises: the drying time is 5-8 h, and the drying temperature is 60-80 ℃.
The invention discloses an S-doped SnSe/CNTs composite flexible film prepared by the preparation method.
Compared with the prior art, the invention has the following beneficial effects:
the preparation method of the S-doped SnSe/CNTs composite flexible film provided by the invention adopts the combination of the solvothermal method and the vacuum filtration technology to prepare the S-doped SnSe/CNTs composite flexible film, and the synthesis process is simple and easy to operate. According to the invention, the electrical conductivity of the film is improved by adding the CNTs, and the thermoelectric property of the S-doped SnSe/CNTs film is effectively improved; an S-doped SnSe material is obtained in the synthesis process through a solvothermal method, the carrier transmission capability of the material is improved, a new idea is provided for the synthesis of SnSe, and the problem of agglomeration of CNTs can be reduced and the dispersibility is improved through solvothermal reaction. The thickness of the S-doped SnSe/CNTs thin-film thermoelectric material can be effectively controlled through a vacuum filtration method, and the flexibility and the stability of the SnSe thin-film thermoelectric material can be further improved. Therefore, the preparation method can effectively solve the problem of poor flexibility of the SnSe thin film thermoelectric material and improve the conductivity of the SnSe thin film.
The invention discloses an S-doped SnSe/CNTs composite flexible film prepared by the preparation method, wherein the CNTs have excellent electrical property, so that the electrical conductivity of the system can be effectively improved, and the electrical conductivity is excellent at room temperature.
Furthermore, related tests show that the conductivity of the S-doped SnSe/CNTs composite flexible film with the novel micro-plate structure can reach 10-15S/cm.
Drawings
FIG. 1 is an SEM image of an S-doped SnSe/CNTs composite flexible film magnified 1500 times;
FIG. 2 is an SEM image of a S-doped SnSe/CNTs composite flexible film magnified by 35000 times.
Detailed Description
In order to make the technical solutions of the present invention better understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and claims of the present invention and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the invention described herein are capable of operation in sequences other than those illustrated or described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
The invention provides a preparation method of an S-doped SnSe/CNTs composite flexible film, which comprises the following steps:
step 1, adding Na2SeO3And 1-10 mmol of SnCl2·2H2Dissolving O in 40mL of ethylene glycol solution at a molar ratio of 1-x:1 to obtain a solution A, and dissolving the solution A in the presence of S2-Ion content and Se2-Dissolving the monomer S in the solution A to obtain a solution B, wherein the ion ratio is 1-x: x, x is more than 0 and less than or equal to 0.05;
step 2, weighing 0.1-0.5 mg of CNTs, and ultrasonically dispersing in the solution B to obtain a solution C;
step 3, putting the solution C into a reaction kettle, carrying out a solvothermal reaction at the temperature of 180-230 ℃ for 12-36 hours, carrying out centrifugal cleaning on an obtained product system after the reaction is finished to obtain a product D, and drying the product D in a vacuum drying oven for 8-12 hours at the temperature of 70 ℃ to obtain a dried product D;
step 4, ultrasonically dispersing the dried product D in 10mL of ethanol solution, and carrying out vacuum filtration for 0.5-2 h to obtain a film E;
step 5, drying the film E in a drying oven for 5-8 h at the drying temperature of 60-80 ℃ to obtain the final SnSe with the novel micro-plate structure1-xSxAnd x is more than 0 and less than or equal to 0.05, namely the S-doped SnSe/CNTs composite flexible film.
SnSe with novel micro-plate structure prepared by adopting preparation method1-xSxthe/CNTs composite flexible film has x more than 0 and less than or equal to 0.05 and excellent conductivity. The Seebeck coefficient/resistance analysis system test shows that the conductivity of the material can reach 10-15S/cm at room temperature.
The invention is further illustrated by the following specific figures and examples:
example 1
Step 1, adding Na2SeO3And 1mmol of SnCl2·2H2Dissolving O in 40mL of ethylene glycol solution at a molar ratio of 1-x:1 to obtain a solution A, and dissolving the solution A in the presence of S2-Ion content and Se2-Dissolving S in the solution A at an ion ratio of 1-x: x, wherein x is 0.01, to obtain a solution B;
step 2, weighing 0.1mg of CNTs, and ultrasonically dispersing the CNTs in the solution B to obtain a solution C;
step 3, putting the solution C into a reaction kettle, carrying out a solvothermal reaction at the temperature of 200 ℃ for 36 hours, centrifugally cleaning an obtained product system after the reaction is finished to obtain a product D, and drying the product D in a vacuum drying oven for 8 hours at the temperature of 70 ℃ to obtain a dried product D;
step 4, ultrasonically dispersing the dried product D in 10mL of ethanol solution, and carrying out vacuum filtration for 0.5 time to obtain a film E;
step 5, drying the film E in a drying oven for 5 hours at the drying temperature of 60 ℃ to obtain the final SnSe with the novel micro-plate structure1-xSxAnd x is 0.01, namely the S-doped SnSe/CNTs composite flexible film.
SnSe of novel micro-plate structure prepared by the embodiment1-xSxThe electrical property of the/CNTs composite flexible film at room temperature is shown by the test of a Seebeck coefficient/resistance analysis systemThe conductivity can reach 12.3S/cm.
Example 2
Step 1, adding Na2SeO3And 5mmol of SnCl2·2H2Dissolving O in 40mL of ethylene glycol solution at a molar ratio of 1-x:1 to obtain a solution A, and dissolving the solution A in the presence of S2-Ion content and Se2-Dissolving S in the solution A at an ion ratio of 1-x: x, wherein x is 0.02, so as to obtain a solution B;
step 2, weighing 0.2mg of CNTs, and ultrasonically dispersing the CNTs in the solution B to obtain a solution C;
step 3, putting the solution C into a reaction kettle, carrying out a solvothermal reaction at the temperature of 210 ℃ for 30 hours, centrifugally cleaning an obtained product system after the reaction is finished to obtain a product D, and drying the product D in a vacuum drying oven for 9 hours at the temperature of 70 ℃ to obtain a dried product D;
step 4, ultrasonically dispersing the dried product D in 10mL of ethanol solution, carrying out vacuum filtration for 1h to obtain a film E;
step 5, drying the film E in a drying oven for 6 hours at the drying temperature of 70 ℃ to obtain the final SnSe with the novel micro-plate structure1-xSxAnd (2) the/CNTs composite flexible film, wherein x is 0.02, namely the S-doped SnSe/CNTs composite flexible film.
SnSe of novel micro-plate structure prepared by the embodiment1-xSxThe electrical conductivity of the/CNTs composite flexible film can reach 13.5S/cm through the test of a Seebeck coefficient/resistance analysis system.
Example 3
Step 1, adding Na2SeO3And 3mmol of SnCl2·2H2Dissolving O in 40mL of ethylene glycol solution at a molar ratio of 1-x:1 to obtain a solution A, and dissolving the solution A in the presence of S2-Ion content and Se2-Dissolving S in the solution A at an ion ratio of 1-x: x, wherein x is 0.03, to obtain a solution B;
step 2, weighing 0.5mg of CNTs, and ultrasonically dispersing the CNTs in the solution B to obtain a solution C;
step 3, putting the solution C into a reaction kettle, carrying out a solvothermal reaction at 230 ℃ for 12 hours, centrifugally cleaning an obtained product system after the reaction is finished to obtain a product D, and drying the product D in a vacuum drying oven for 8 hours at 70 ℃ to obtain a dried product D;
and 4, ultrasonically dispersing the dried product D in 10mL of ethanol solution, carrying out vacuum filtration, and carrying out suction filtration for 2h to obtain a film E.
Step 5, drying the film E in a drying oven for 8 hours at the drying temperature of 70 ℃ to obtain the final SnSe with the novel micro-plate structure1-xSxAnd x is 0.03, namely the S-doped SnSe/CNTs composite flexible film.
SnSe of novel micro-plate structure prepared by the embodiment1-xSxThe electrical conductivity of the/CNTs composite flexible film can reach 11.3S/cm through the test of a Seebeck coefficient/resistance analysis system.
Example 4
Step 1, adding Na2SeO3And 2mmol of SnCl2·2H2Dissolving O in 40mL of ethylene glycol solution at a molar ratio of 1-x:1 to obtain a solution A, and dissolving the solution A in the presence of S2-Ion content and Se2-Dissolving S in the solution A at an ion ratio of 1-x: x, wherein x is 0.01, to obtain a solution B;
step 2, weighing 0.4mg of CNTs, and ultrasonically dispersing the CNTs in the solution B to obtain a solution C;
step 3, putting the solution C into a reaction kettle, carrying out a solvothermal reaction at 220 ℃ for 24 hours, centrifugally cleaning an obtained product system after the reaction is finished to obtain a product D, and drying the product D in a vacuum drying oven for 10 hours at 70 ℃ to obtain a dried product D;
and 4, ultrasonically dispersing the dried product D in 10mL of ethanol solution, carrying out vacuum filtration, and carrying out suction filtration for 1h to obtain the film E.
Step 5, drying the film E in a drying oven for 8 hours at the drying temperature of 80 ℃ to obtain the final SnSe with the novel micro-plate structure1-xSxAnd x is 0.01, namely the S-doped SnSe/CNTs composite flexible film.
SnSe of novel micro-plate structure prepared by the embodiment1-xSxCNTs composite flexible film having Seebeck coefficient/resistanceThe analytic system tests show that the conductivity of the conductive material can reach 14.3S/cm.
Example 5
Step 1, adding Na2SeO3And 9mmol of SnCl2·2H2Dissolving O in 40mL of ethylene glycol solution at a molar ratio of 1-x:1 to obtain a solution A, and dissolving the solution A in the presence of S2-Ion content and Se2-Dissolving S in the solution A at an ion ratio of 1-x: x, wherein x is 0.05 to obtain a solution B;
step 2, weighing 0.3mg of CNTs, and ultrasonically dispersing the CNTs in the solution B to obtain a solution C;
step 3, putting the solution C into a reaction kettle, carrying out a solvothermal reaction at 190 ℃ for 18h, centrifugally cleaning an obtained product system after the reaction is finished to obtain a product D, and drying the product D in a vacuum drying oven for 12h at 70 ℃ to obtain a dried product D;
and 4, ultrasonically dispersing the dried product D in 10mL of ethanol solution, carrying out vacuum filtration, and carrying out suction filtration for 2h to obtain a film E.
Step 5, drying the film E in a drying oven for 8 hours at the drying temperature of 70 ℃ to obtain the final SnSe with the novel micro-plate structure1-xSxAnd x is 0.05, namely the S-doped SnSe/CNTs composite flexible film.
SnSe of novel micro-plate structure prepared by the embodiment1-xSxThe electrical conductivity of the/CNTs composite flexible film can reach 13.6S/cm through the test of a Seebeck coefficient/resistance analysis system.
Example 6
Step 1, adding Na2SeO3And 8mmol of SnCl2·2H2Dissolving O in 40mL of ethylene glycol solution at a molar ratio of 1-x:1 to obtain a solution A, and dissolving the solution A in the presence of S2-Ion content and Se2-Dissolving S in the solution A at an ion ratio of 1-x: x, wherein x is 0.03, to obtain a solution B;
step 2, weighing 0.5mg of CNTs, and ultrasonically dispersing the CNTs in the solution B to obtain a solution C;
step 3, putting the solution C into a reaction kettle, carrying out a solvothermal reaction at 180 ℃ for 36 hours, centrifugally cleaning an obtained product system after the reaction is finished to obtain a product D, and drying the product D in a vacuum drying oven for 8 hours at 70 ℃ to obtain a dried product D;
and 4, ultrasonically dispersing the dried product D in 10mL of ethanol solution, carrying out vacuum filtration, and carrying out suction filtration for 2h to obtain a film E.
Step 5, drying the film E in a drying oven for 8 hours at the drying temperature of 70 ℃ to obtain the final SnSe with the novel micro-plate structure1-xSxAnd x is 0.03, namely the S-doped SnSe/CNTs composite flexible film.
SnSe of novel micro-plate structure prepared by the embodiment1-xSxThe electrical conductivity of the/CNTs composite flexible film can reach 12.5S/cm through the test of a Seebeck coefficient/resistance analysis system.
Example 7
Step 1, adding Na2SeO3And 6mmol of SnCl2·2H2Dissolving O in 40mL of ethylene glycol solution at a molar ratio of 1-x:1 to obtain a solution A, and dissolving the solution A in the presence of S2-Ion content and Se2-Dissolving S in the solution A at an ion ratio of 1-x: x, wherein x is 0.02, so as to obtain a solution B;
step 2, weighing 0.2mg of CNTs, and ultrasonically dispersing the CNTs in the solution B to obtain a solution C;
step 3, putting the solution C into a reaction kettle, carrying out a solvothermal reaction at the temperature of 200 ℃ for 20 hours, centrifugally cleaning an obtained product system after the reaction is finished to obtain a product D, and drying the product D in a vacuum drying oven for 12 hours at the temperature of 70 ℃ to obtain a dried product D;
and 4, ultrasonically dispersing the dried product D in 10mL of ethanol solution, carrying out vacuum filtration, and carrying out suction filtration for 1h to obtain the film E.
And 5, drying the film E in a drying oven for 6 hours at the drying temperature of 60-80 ℃ to obtain the final SnSe with the novel micro-plate structure1-xSxAnd (2) the/CNTs composite flexible film, wherein x is 0.02, namely the S-doped SnSe/CNTs composite flexible film.
SnSe of novel micro-plate structure prepared by the embodiment1-xSx/CNTs composite flexible filmThe electrical conductivity of the film can reach 13.1S/cm as shown by a Seebeck coefficient/resistance analysis system test.
Example 8
Step 1, adding Na2SeO3And 6mmol of SnCl2·2H2Dissolving O in 40mL of ethylene glycol solution at a molar ratio of 1-x:1 to obtain a solution A, and dissolving the solution A in the presence of S2-Ion content and Se2-Dissolving S in the solution A at an ion ratio of 1-x: x, wherein x is 0.04, so as to obtain a solution B;
step 2, weighing 0.4mg of CNTs, and ultrasonically dispersing the CNTs in the solution B to obtain a solution C;
step 3, putting the solution C into a reaction kettle, carrying out a solvothermal reaction at the temperature of 200 ℃ for 36 hours, centrifugally cleaning an obtained product system after the reaction is finished to obtain a product D, and drying the product D in a vacuum drying oven for 8 hours at the temperature of 70 ℃ to obtain a dried product D;
and 4, ultrasonically dispersing the dried product D in 10mL of ethanol solution, carrying out vacuum filtration, and carrying out suction filtration for 2h to obtain a film E.
Step 5, drying the film E in a drying oven for 8 hours at the drying temperature of 60 ℃ to obtain the final SnSe with the novel micro-plate structure1-xSxthe/CNTs composite flexible film is 0.04, namely the S-doped SnSe/CNTs composite flexible film.
SnSe of novel micro-plate structure prepared by the embodiment1-xSxThe electrical conductivity of the/CNTs composite flexible film can reach 10.8S/cm through the test of a Seebeck coefficient/resistance analysis system.
Example 9
Step 1, adding Na2SeO3And 8mmol of SnCl2·2H2Dissolving O in 40mL of ethylene glycol solution at a molar ratio of 1-x:1 to obtain a solution A, and dissolving the solution A in the presence of S2-Ion content and Se2-Dissolving S in the solution A at an ion ratio of 1-x: x, wherein x is 0.01, to obtain a solution B;
step 2, weighing 0.2mg of CNTs, and ultrasonically dispersing the CNTs in the solution B to obtain a solution C;
step 3, putting the solution C into a reaction kettle, carrying out a solvothermal reaction at 180 ℃ for 36 hours, centrifugally cleaning an obtained product system after the reaction is finished to obtain a product D, and drying the product D in a vacuum drying oven for 10 hours at 70 ℃ to obtain a dried product D;
and 4, ultrasonically dispersing the dried product D in 10mL of ethanol solution, carrying out vacuum filtration, and carrying out suction filtration for 1.5h to obtain the film E.
Step 5, drying the film E in a drying oven for 6 hours at the drying temperature of 70 ℃ to obtain the final SnSe with the novel micro-plate structure1-xSxAnd x is 0.01, namely the S-doped SnSe/CNTs composite flexible film.
SnSe of novel micro-plate structure prepared by the embodiment1-xSxThe electrical conductivity of the/CNTs composite flexible film can reach 11.3S/cm through the test of a Seebeck coefficient/resistance analysis system.
Example 10
Step 1, adding Na2SeO3And 10mmol of SnCl2·2H2Dissolving O in 40mL of ethylene glycol solution at a molar ratio of 1-x:1 to obtain a solution A, and dissolving the solution A in the presence of S2-Ion content and Se2-Dissolving S in the solution A at an ion ratio of 1-x: x, wherein x is 0.04, so as to obtain a solution B;
step 2, weighing 0.5mg of CNTs, and ultrasonically dispersing the CNTs in the solution B to obtain a solution C;
step 3, putting the solution C into a reaction kettle, carrying out a solvothermal reaction at 230 ℃ for 36 hours, centrifugally cleaning an obtained product system after the reaction is finished to obtain a product D, and drying the product D in a vacuum drying oven for 8 hours at 70 ℃ to obtain a dried product D;
and 4, ultrasonically dispersing the dried product D in 10mL of ethanol solution, carrying out vacuum filtration, and carrying out suction filtration for h to obtain a film E.
Step 5, drying the film E in a drying oven for 8 hours at the drying temperature of 80 ℃ to obtain the final SnSe with the novel micro-plate structure1-xSxAnd x is 0.04, namely the S-doped SnSe/CNTs composite flexible film.
SnSe of novel micro-plate structure prepared by the embodiment1-xSxThe electrical conductivity of the/CNTs composite flexible film can reach 12.5S/cm through the test of a Seebeck coefficient/resistance analysis system.
Referring to FIG. 1, it can be seen that SnSe is obtained by vacuum filtration1-xSxthe/CNTs composite flexible film (S-doped SnSe/CNTs composite flexible film) has better density;
referring to FIG. 2, it can be seen that the SnSe is produced1-xSxCNTs in the/CNTs composite flexible film (S-doped SnSe/CNTs composite flexible film) are uniformly dispersed in the system, which is beneficial to improving the conductivity of the system.
The above-mentioned contents are only for illustrating the technical idea of the present invention, and the protection scope of the present invention is not limited thereby, and any modification made on the basis of the technical idea of the present invention falls within the protection scope of the claims of the present invention.

Claims (9)

1. A preparation method of an S-doped SnSe/CNTs composite flexible film is characterized by comprising the following steps:
1) mixing Na2SeO3And SnCl2·2H2Dissolving O in a solvent A to obtain a solution A, dissolving a monomer S in the solution A to obtain a solution B, and ultrasonically dispersing CNTs in the solution B to obtain a solution C;
2) carrying out solvothermal reaction on the solution C to obtain a product system, and drying the product system after centrifugal cleaning to obtain a dried product D;
3) ultrasonically dispersing the dried product D in a solvent B, carrying out vacuum filtration to obtain a film E, and drying the film E to obtain an S-doped SnSe/CNTs composite flexible film;
the obtained S-doped SnSe/CNTs composite flexible film is SnSe1-xSxthe/CNTs composite flexible film has x more than 0 and less than or equal to 0.05.
2. The preparation method of the S-doped SnSe/CNTs composite flexible film according to claim 1, wherein SnCl2·2H2The reaction charge ratio of O to CNTs is 1-10 mmol: 0.1-0.5 mg;
Na2SeO3，SnCl2·2H2the molar ratio of the reaction feeding of O and the simple substance S is 1-x:1: x, wherein x is more than 0 and less than or equal to 0.05.
3. The preparation method of the S-doped SnSe/CNTs composite flexible film according to claim 1, wherein SnCl2·2H2The reaction feeding ratio of the O to the solvent A to the solvent B is 1-10 mmol: 40mL of: 10 mL.
4. The method for preparing the S-doped SnSe/CNTs composite flexible film according to claim 1, wherein solvent A is ethylene glycol, and solvent B is ethanol.
5. The method for preparing the S-doped SnSe/CNTs composite flexible film according to claim 1, wherein the reaction parameters of the solvothermal reaction comprise: the temperature is 180-230 ℃, and the time is 12-36 h.
6. The method for preparing S-doped SnSe/CNTs composite flexible thin film according to claim 1, wherein the drying operation parameters of the dried product D comprise: the time is 8-12 h, and the temperature is 70 ℃.
7. The preparation method of the S-doped SnSe/CNTs composite flexible film according to claim 1, characterized in that the vacuum filtration time is 0.5-2 h.
8. The method for preparing the S-doped SnSe/CNTs composite flexible film according to claim 1, wherein the drying treatment of the film E comprises: the drying time is 5-8 h, and the drying temperature is 60-80 ℃.
9. The S-doped SnSe/CNTs composite flexible film prepared by the preparation method of any one of claims 1-8.
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