CN113540292A - Manufacturing method of photovoltaic louver blade capable of efficiently generating electricity and photovoltaic louver blade - Google Patents
Manufacturing method of photovoltaic louver blade capable of efficiently generating electricity and photovoltaic louver blade Download PDFInfo
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- CN113540292A CN113540292A CN202110819311.0A CN202110819311A CN113540292A CN 113540292 A CN113540292 A CN 113540292A CN 202110819311 A CN202110819311 A CN 202110819311A CN 113540292 A CN113540292 A CN 113540292A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 41
- 230000005611 electricity Effects 0.000 title claims description 6
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- 238000010248 power generation Methods 0.000 claims abstract description 33
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- 229910052710 silicon Inorganic materials 0.000 claims abstract description 28
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- 238000005520 cutting process Methods 0.000 claims abstract description 24
- 238000004806 packaging method and process Methods 0.000 claims abstract description 14
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- 238000000034 method Methods 0.000 claims description 14
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- 238000003698 laser cutting Methods 0.000 claims description 3
- 229920006280 packaging film Polymers 0.000 claims 3
- 239000012785 packaging film Substances 0.000 claims 3
- 238000003466 welding Methods 0.000 abstract description 9
- 238000003475 lamination Methods 0.000 abstract 1
- 210000004027 cell Anatomy 0.000 description 47
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- 238000010586 diagram Methods 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 3
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- 238000009434 installation Methods 0.000 description 2
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- 229920006124 polyolefin elastomer Polymers 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
- H01L31/188—Apparatus specially adapted for automatic interconnection of solar cells in a module
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S20/00—Supporting structures for PV modules
- H02S20/20—Supporting structures directly fixed to an immovable object
- H02S20/22—Supporting structures directly fixed to an immovable object specially adapted for buildings
- H02S20/26—Building materials integrated with PV modules, e.g. façade elements
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention provides a manufacturing method of a photovoltaic louver blade for efficient power generation, which is characterized in that a cutting mode of a crystalline silicon battery original sheet and an overlapping connection mode of a cut crystalline silicon battery sheet are determined according to the size and shape of the photovoltaic louver blade; and sequentially overlapping a plurality of the cut crystalline silicon battery pieces to form crystalline silicon battery strings, and carrying out wiring operation after lamination packaging to prepare the photovoltaic louver. By the manufacturing method of the photovoltaic louver blade capable of efficiently generating power, the silicon area ratio in unit area can be improved, the use of welding strips is reduced, the cutting times are reduced, and the generated energy and the reliability are improved. The invention also provides a photovoltaic louver manufactured by the manufacturing method of the photovoltaic louver with high-efficiency power generation.
Description
Technical Field
The invention relates to the technical field of photovoltaic building correlation, in particular to a photovoltaic louver blade and a manufacturing method thereof for efficient power generation.
Background
Photovoltaic blind is a product that integrates building tripe sunshade and photovoltaic power generation function together, and photovoltaic blind has a plurality of shutter plate, and the shutter plate surface sets up solar module, generates electricity through solar module. The solar cell module is made by connecting a plurality of single solar cells in series and in parallel and tightly packaging. The photovoltaic blind curtain has good application prospect in the related field of photovoltaic buildings.
In the prior art, the photovoltaic blind has dual functions of sun shading and photovoltaic power generation, and has the advantages of dimming and privacy protection, and is applied to more and more building projects. No matter the louver with built-in hollow glass or the outdoor building activity external sunshade louver, the installation scene is in an indoor or outside wall body, the irradiation quantity received by the photovoltaic louver is very low due to the fact that the louver has the inclination angle and the sunlight has a certain altitude angle, and therefore the power generation efficiency and the power generation power of the photovoltaic louver are not ideal, and how to effectively improve the power generation efficiency and the power generation power of the photovoltaic louver is an important technical problem in the field.
The photovoltaic blind curtain has the key structure that the louver blades of the solar cell module are arranged. In the prior art, a solar cell module mainly adopts a thin film cell module or a welding strip connection type crystalline silicon cell module. The existing thin-film solar cell is low in photoelectric conversion efficiency and stability, and is lower in generating efficiency and generating power when arranged on a louver with limited area.
The power generation efficiency of the solder ribbon connected type crystalline silicon battery assembly is relatively high, but the existing solder ribbon connected type crystalline silicon battery assembly also has some defects. Firstly, the cell plates of the cell component have the plate spacing, and the occupation ratio of the effective power generation area is smaller when the cell components are arranged on the louver plates, so that the power generation efficiency is not ideal; secondly, as the size of the louver is far smaller than that of the existing crystalline silicon battery original piece, the crystalline silicon battery original piece needs to be subjected to complex cutting to meet the requirements of circuit design of the size of the louver and damage of a cutting surface caused by cutting, and due to the fact that the welding strips are connected in series, hidden cracks of a manufacturing process and reduction of reliability and service life are easily caused due to the fact that the welding strips and the crystalline silicon have different thermal expansion coefficients; in addition, due to the requirements of building integration on appearance and anti-dazzle purpose, the silvery white welding strip needs to be shielded by using a black adhesive tape, so that the process not only increases the labor and material cost, but also further reduces the power generation area, namely further reduces the power generation power.
In summary, in the prior art, the manufacturing process of the louver based on the crystalline silicon battery assembly is complex, the material cost and the labor cost are high, and the effective power generation area of the manufactured louver is not ideal.
Disclosure of Invention
In view of the above, the present invention provides a method for manufacturing photovoltaic louvers with high power generation efficiency, in which a plurality of crystalline silicon cells obtained after cutting are sequentially overlapped to increase the crystalline silicon area ratio in a unit area, reduce the use of solder strips, and reduce the cutting times.
The photovoltaic louver blade is manufactured by the manufacturing method of the photovoltaic louver blade with high efficiency.
In order to achieve the above object, the present invention provides a method for manufacturing a photovoltaic louver blade capable of generating electricity efficiently, comprising the steps of:
(A) determining a cutting mode of the crystalline silicon battery primary sheet and an overlapping connection mode of the cut crystalline silicon battery sheet according to the size and shape of the photovoltaic louver sheet;
(B) carrying out laser cutting on the crystalline silicon cell original wafer to obtain a plurality of crystalline silicon cell wafers;
(C) sequentially arranging a plurality of crystalline silicon battery pieces, wherein the back crystalline silicon battery piece is overlapped and connected with the top surface of the edge part of the front crystalline silicon battery piece through the bottom surface of the edge part to form a single-string crystalline silicon battery string;
(D) according to the current and voltage requirements of the photovoltaic louver blades, a plurality of single-string crystalline silicon cell strings are arranged in series and parallel to form a crystalline silicon cell string group;
(E) laminating and packaging the crystalline silicon battery string group;
(F) and carrying out wiring operation to manufacture the photovoltaic louver blade.
Preferably, the overlapping connection manner in the step (a) is one of a long-side overlapping manner and a short-side overlapping manner.
Preferably, when the overlapping mode in the step (a) is a long-edge overlapping mode, the crystalline silicon cell primary sheet is a long-edge overlapping type N main grid line cell sheet, N is greater than or equal to 3, and the main grid lines on the crystalline silicon cell primary sheet are parallel to each other; the step (B) specifically comprises: the crystal silicon cell is rectangular, the crystal silicon cell is provided with a pair of long edges and a pair of short edges, and the main grid line is positioned on the long edges.
Preferably, the step (C) specifically includes: sequentially arranging a plurality of cut crystalline silicon battery pieces, aligning the crystalline silicon battery pieces through long edges, overlapping and connecting a next crystalline silicon battery piece with the top surface of the long edge of a previous crystalline silicon battery piece through the bottom surface of the long edge, forming a overlapping part at the overlapping and connecting part of the next crystalline silicon battery piece and the previous crystalline silicon battery piece, and conducting the positive and negative electrodes of the two crystalline silicon battery pieces through conductive adhesive at the overlapping part; the long sides of the crystalline silicon battery plates at the head end and the tail end, which are not connected with other crystalline silicon battery plates, are respectively provided with leading-out wires; and forming a single string crystal silicon battery string.
Preferably, when the overlapping mode in the step (a) is a short-edge overlapping mode, the crystalline silicon cell primary sheet is a short-edge overlapping type N main grid line cell sheet, N is greater than or equal to 1, and the main grid lines on the crystalline silicon cell primary sheet are parallel to each other; the step (B) specifically comprises: the crystal silicon battery piece of equal parts is cut into with the former piece of crystal silicon battery along the direction of perpendicular to main grid line, and crystal silicon battery piece is the rectangle, and crystal silicon battery piece has a pair of long limit and a pair of minor face, and the main grid line is located the minor face.
Preferably, the step (C) specifically includes: arranging a plurality of cut crystalline silicon battery pieces in sequence, aligning the crystalline silicon battery pieces through short edges, connecting a next crystalline silicon battery piece with the top surface of the short edge of a previous crystalline silicon battery piece through the bottom surface of the short edge of the next crystalline silicon battery piece in an overlapping manner through conductive adhesive, forming an overlapping part at the overlapping connection part of the next crystalline silicon battery piece and the previous crystalline silicon battery piece, and conducting the positive and negative electrodes of the two crystalline silicon battery pieces through the conductive adhesive at the overlapping part; the short sides of the crystalline silicon battery plates at the head end and the tail end, which are not connected with other crystalline silicon battery plates, are respectively provided with leading-out wires; and forming a single string crystal silicon battery string.
Preferably, the step (E) is specifically: a front plate is arranged on the packaging adhesive film above the crystalline silicon battery string group, a rear plate is arranged below the packaging adhesive film below the crystalline silicon battery string group, and then a laminating machine is adopted for hot press molding.
Preferably, when the flexible photovoltaic louver is manufactured, the front plate is made of a flexible transparent material with weather resistance, the back plate is made of a flexible material with weather resistance, and after hot press forming is carried out by a laminating machine, carrier installation is carried out.
Preferably, when manufacturing the rigid photovoltaic louvre, at least one of the front and rear panels is of a rigid material and the front panel is transparent.
The invention provides a photovoltaic louver blade which is manufactured by the manufacturing method of the photovoltaic louver blade with high-efficiency power generation.
Compared with the prior art, the photovoltaic louver manufacturing method and the photovoltaic louver disclosed by the invention have the advantages that: the manufacturing method of the photovoltaic louver blade capable of efficiently generating electricity can effectively improve the silicon area ratio in unit area, so that the generating capacity is improved; the cutting and overlapping operation of the crystalline silicon battery piece is flexible, the crystalline silicon battery piece can be matched with louver pieces with different sizes, the cutting times and cutting damage can be reduced, the generated energy is improved, and meanwhile, the raw material and production cost are reduced; the crystalline silicon battery pieces are connected in an overlapping mode through the conductive adhesive, a welding strip welding mode is not adopted, and the process yield and the reliability are higher; the prepared photovoltaic louver blade has less silver white welding rods, the subsequent treatment on the welding rods is simpler, and the material and production cost can be reduced; photovoltaic shutter plate generated energy is higher, and the reliability is better, and is more pleasing to the eye.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a flow chart of a manufacturing method of a photovoltaic louver with high power generation efficiency according to the invention.
Fig. 2 is a schematic cutting and overlapping diagram of the method for manufacturing a photovoltaic louver with high power generation efficiency according to the invention when a long-edge overlapping mode is selected.
FIG. 3 is a schematic side cross-sectional view of a crystalline silicon cell stacked with the method for manufacturing photovoltaic louvre with high power generation efficiency according to the present invention.
Fig. 4 is a schematic cutting and overlapping diagram of the method for manufacturing a photovoltaic louver with high power generation efficiency according to the present invention when a short edge overlapping manner is selected.
Fig. 5 is a schematic view illustrating laminating and packaging a crystalline silicon cell string in the manufacturing method of a photovoltaic louver with high power generation efficiency according to the present invention.
Fig. 6 is a top view of a photovoltaic louver formed after a single-string long-edge stacked cover type crystalline silicon battery pack is packaged.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1, the method for manufacturing a photovoltaic louver with high power generation efficiency of the present application includes the steps of:
(A) determining a cutting mode of the crystalline silicon battery primary sheet and an overlapping connection mode of the cut crystalline silicon battery sheet according to the size and shape of the photovoltaic louver sheet;
(B) carrying out laser cutting on the crystalline silicon cell original wafer to obtain a plurality of crystalline silicon cell wafers;
(C) sequentially arranging a plurality of crystalline silicon battery pieces, wherein the back crystalline silicon battery piece is overlapped and connected with the top surface of the edge part of the front crystalline silicon battery piece through the bottom surface of the edge part to form a single-string crystalline silicon battery string;
(D) according to the current and voltage requirements of the photovoltaic louver blades, a plurality of single-string crystalline silicon cell strings are arranged in series and parallel to form a crystalline silicon cell string group;
(E) laminating and packaging the crystalline silicon battery string group;
(F) and carrying out wiring operation to manufacture the photovoltaic louver blade.
Specifically, the overlapping connection mode in the step (A) comprises a long-edge overlapping mode and a short-edge overlapping mode, the long-edge overlapping mode or the short-edge overlapping mode is selected according to the size and shape of the required photovoltaic louver, and the crystalline silicon cell primary sheet is cut according to the requirement of the overlapping mode. The overlapping mode is planned in advance according to the size and the shape of the photovoltaic louver blade in the step (A) to flexibly adapt to the photovoltaic louver blades with various sizes, so that the crystal silicon area occupation ratio in the unit area of the manufactured photovoltaic louver blade is as high as possible, and the generated energy of the photovoltaic louver blade product is improved. The cutting mode is planned in advance, so that the original wafer of the crystalline silicon battery can be cut at one time in the subsequent operation steps, the cutting times are reduced, the cutting time can be effectively reduced, and the processing efficiency is improved. In addition, due to the fact that the cutting times are reduced, cutting damage to the crystalline silicon battery piece is reduced, and the power generation amount and the reliability of the manufactured photovoltaic louver piece are further improved.
Specifically, referring to fig. 2, a schematic diagram of cutting overlap when a long-edge overlap mode is adopted, a crystalline silicon cell primary sheet 30 is a long-edge overlap type N main grid line cell sheet, N is greater than or equal to 3, and main grid lines on the crystalline silicon cell primary sheet 30 are parallel to each other and have equal intervals. The cutting operation of the crystalline silicon battery original piece 30 specifically comprises: the crystalline silicon battery piece 31 of equal parts is cut into with former piece 30 of crystalline silicon battery along the main grid line, and crystalline silicon battery piece 31 is the rectangle, and crystalline silicon battery piece 31 has a pair of long limit and a pair of minor face, and the main grid line is located the long edge, and the long limit of crystalline silicon battery piece 31 is positive negative pole respectively.
Referring to fig. 2 and 3, a plurality of crystalline silicon battery pieces 31 are sequentially arranged, the crystalline silicon battery pieces 31 are aligned through long sides, the next crystalline silicon battery piece 31 is overlapped and connected with the top surface of the long side edge of the previous crystalline silicon battery piece 31 through the bottom surface of the long side edge, an overlapping part 32 is formed at the overlapping and connecting part of the next crystalline silicon battery piece 31 and the previous crystalline silicon battery piece 31, and the positive and negative electrodes of the two crystalline silicon battery pieces 31 are conducted through conductive adhesive in the overlapping part 32. The long sides of the first and last crystalline silicon cell pieces 31 not connected to the other crystalline silicon cell pieces 31 have lead lines 33, respectively. And forming a single string crystal silicon battery string. It should be noted that the crystalline silicon cell 31 has an inclined structure, the long side of one side is higher than the long side of the other side, and the bottom of the long side edge of the higher side of the next crystalline silicon cell 31 is overlapped and connected with the top of the long side edge of the lower side of the previous crystalline silicon cell by a conductive adhesive. The crystal silicon cell 31 with the inclined structure can ensure the integral flatness of the formed single-string crystal silicon cell string, and is convenient for the subsequent steps.
Referring to fig. 4, a schematic diagram of cutting overlap when a short edge overlap mode is adopted is shown, a crystalline silicon cell primary sheet 30A is a short edge overlap type N main grid line cell sheet, N is greater than or equal to 1, and the main grid lines are parallel to each other. The cutting operation of the crystalline silicon battery original piece 30A is specifically as follows: the crystalline silicon battery sheet 31A is cut into equal parts along the direction perpendicular to the main grid lines, the crystalline silicon battery sheet 31A is rectangular, the crystalline silicon battery sheet 31A is provided with a pair of long edges and a pair of short edges, the main grid lines are located on the short edges, and the short edges of the crystalline silicon battery sheet 31A are respectively provided with a positive electrode and a negative electrode.
And then, the crystalline silicon battery pieces 31A are sequentially arranged, the crystalline silicon battery pieces 31A are aligned through short edges, the next crystalline silicon battery piece 31A is connected with the top surface of the short edge part of the previous crystalline silicon battery piece 31A through the bottom surface of the short edge part through conductive adhesive in an overlapping mode, an overlapping part 32A is formed at the overlapping connection part of the next crystalline silicon battery piece 31A and the previous crystalline silicon battery piece 31A, and the positive and negative poles of the two crystalline silicon battery pieces 31A are conducted in the overlapping part 32A through the conductive adhesive. The short sides of the first and last crystalline silicon cell pieces 31A not connected to the other crystalline silicon cell pieces 31A have lead lines 33A, respectively. And forming a single string crystal silicon battery string. It is worth noting that the crystalline silicon cell 31A is also of an inclined structure, the short edge on one side is higher than the short edge on the other side, and the bottom of the short edge on the higher side of the next crystalline silicon cell 31 is overlapped and connected with the top of the short edge on the lower side of the previous crystalline silicon cell through a conductive adhesive. The crystal silicon cell 31 with the inclined structure can ensure the integral flatness of the formed single-string crystal silicon cell string, and is convenient for the subsequent steps.
The step (E) of laminating and packaging the crystalline silicon battery string group specifically comprises the following steps: the upper surface and the lower surface of the crystalline silicon battery string group 3 are respectively provided with a plurality of layers of packaging adhesive films 2, a front plate 1 is arranged on the packaging adhesive film 2 above the crystalline silicon battery string group 3, a rear plate 4 is arranged below the packaging adhesive film 2 below the crystalline silicon battery string group 3, and then a laminating machine is adopted for hot press molding. The packaging adhesive film 2 is made of materials such as EVA (ethylene vinyl acetate copolymer), POE (polyolefin elastomer) and the like, and the packaging adhesive film 2 plays a role in bonding and plays a role in mechanical protection and electrical protection.
When manufacturing the flexible photovoltaic louver, the front plate 1 is made of a flexible transparent material with weather resistance, such as ETFE, ECTFE, transparent photovoltaic back plate, TPT, etc.: the back plate is made of a flexible material with weather resistance, such as a photovoltaic back plate. And (F) after the thermal compression molding by a laminator, mounting a carrier in the form of an aluminum louver carrier or the like.
When manufacturing the rigid photovoltaic louver, at least one of the front plate 1 and the rear plate 4 is made of rigid material, such as glass, epoxy resin plate, PCB board, etc., and the front plate is transparent. And directly performing the step (F) after hot press molding by adopting a laminating machine.
The application also discloses a photovoltaic louver blade, and the manufacturing method of the photovoltaic louver blade with high-efficiency power generation is adopted to manufacture the photovoltaic louver blade. The photovoltaic louver blade can be seen from fig. 6, and fig. 6 shows the photovoltaic louver blade formed after a single-string long-edge overlapping type crystalline silicon battery pack is packaged.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A manufacturing method of a photovoltaic louver blade capable of generating electricity efficiently is characterized by comprising the following steps:
(A) determining a cutting mode of the crystalline silicon battery primary sheet and an overlapping connection mode of the cut crystalline silicon battery sheet according to the size and shape of the photovoltaic louver sheet;
(B) carrying out laser cutting on the crystalline silicon cell original wafer to obtain a plurality of crystalline silicon cell wafers;
(C) sequentially arranging a plurality of crystalline silicon battery pieces, wherein the back crystalline silicon battery piece is overlapped and connected with the top surface of the edge part of the front crystalline silicon battery piece through the bottom surface of the edge part to form a single-string crystalline silicon battery string;
(D) according to the current and voltage requirements of the photovoltaic louver blades, a plurality of single-string crystalline silicon cell strings are arranged in series and parallel to form a crystalline silicon cell string group;
(E) laminating and packaging the crystalline silicon battery string group;
(F) and carrying out wiring operation to manufacture the photovoltaic louver blade.
2. The method for manufacturing photovoltaic louver with high efficiency in power generation as claimed in claim 1, wherein the overlapping connection manner in the step (A) is one of a long-side overlapping manner and a short-side overlapping manner.
3. The manufacturing method of photovoltaic louver blades for high-efficiency power generation as claimed in claim 2, wherein when the overlapping manner in the step (a) is a long-edge overlapping manner, the crystalline silicon cell primary sheet is a long-edge overlapping type N main grid line cell sheet, N is greater than or equal to 3, and the main grid lines on the crystalline silicon cell primary sheet are parallel to each other; the step (B) specifically comprises: the crystal silicon cell is rectangular, the crystal silicon cell is provided with a pair of long edges and a pair of short edges, and the main grid line is positioned on the long edges.
4. A method for manufacturing a photovoltaic louver for high efficiency power generation as claimed in claim 3 wherein the step (C) comprises: sequentially arranging a plurality of cut crystalline silicon battery pieces, aligning the crystalline silicon battery pieces through long edges, overlapping and connecting a next crystalline silicon battery piece with the top surface of the long edge of a previous crystalline silicon battery piece through the bottom surface of the long edge, forming a overlapping part at the overlapping and connecting part of the next crystalline silicon battery piece and the previous crystalline silicon battery piece, and conducting the positive and negative electrodes of the two crystalline silicon battery pieces through conductive adhesive at the overlapping part; the long sides of the crystalline silicon battery plates at the head end and the tail end, which are not connected with other crystalline silicon battery plates, are respectively provided with leading-out wires; and forming a single string crystal silicon battery string.
5. The manufacturing method of photovoltaic louver blades for high-efficiency power generation as claimed in claim 2, wherein when the overlapping manner in the step (a) is a short-edge overlapping manner, the crystalline silicon cell primary sheet is a short-edge overlapping type N main grid line cell sheet, N is greater than or equal to 1, and the main grid lines on the crystalline silicon cell primary sheet are parallel to each other; the step (B) specifically comprises: the crystal silicon battery piece of equal parts is cut into with the former piece of crystal silicon battery along the direction of perpendicular to main grid line, and crystal silicon battery piece is the rectangle, and crystal silicon battery piece has a pair of long limit and a pair of minor face, and the main grid line is located the minor face.
6. A method for manufacturing a photovoltaic louver for high efficiency power generation as claimed in claim 5 wherein said step (C) comprises: arranging a plurality of cut crystalline silicon battery pieces in sequence, aligning the crystalline silicon battery pieces through short edges, connecting a next crystalline silicon battery piece with the top surface of the short edge of a previous crystalline silicon battery piece through the bottom surface of the short edge of the next crystalline silicon battery piece in an overlapping manner through conductive adhesive, forming an overlapping part at the overlapping connection part of the next crystalline silicon battery piece and the previous crystalline silicon battery piece, and conducting the positive and negative electrodes of the two crystalline silicon battery pieces through the conductive adhesive at the overlapping part; the short sides of the crystalline silicon battery plates at the head end and the tail end, which are not connected with other crystalline silicon battery plates, are respectively provided with leading-out wires; and forming a single string crystal silicon battery string.
7. A method for manufacturing a photovoltaic louver with high efficiency for power generation as claimed in claim 1, wherein the step (E) is specifically as follows: the two sides of the crystal silicon battery string are respectively provided with a plurality of layers of packaging films, a front plate is arranged on the packaging films above the crystal silicon battery string, a rear plate is arranged below the packaging films below the crystal silicon battery string, and then a laminating machine is adopted for hot press molding.
8. The method for manufacturing a photovoltaic louver of high efficiency in power generation as claimed in claim 7, wherein the front plate is made of a flexible transparent material with weather resistance and the back plate is made of a flexible material with weather resistance, and the flexible transparent material is subjected to carrier mounting after being hot-pressed and formed by a laminator.
9. The method of manufacturing a high efficiency photovoltaic slat of claim 7 wherein when manufacturing a rigid photovoltaic slat, at least one of the front and rear panels is made of a rigid material and the front panel is transparent.
10. A photovoltaic louver manufactured by the method for manufacturing a photovoltaic louver with high efficiency for power generation as claimed in any one of claims 1 to 9.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114482689A (en) * | 2022-02-23 | 2022-05-13 | 永臻科技股份有限公司 | High printing opacity full glass photovoltaic guardrail |
| CN115126400A (en) * | 2022-06-27 | 2022-09-30 | 永臻科技股份有限公司 | Sound insulation type photovoltaic louver blade and preparation method thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003221896A (en) * | 2002-01-30 | 2003-08-08 | Sekisui House Ltd | Louver device equipped with function of photovoltaic power generation |
| WO2012143009A1 (en) * | 2011-04-18 | 2012-10-26 | Soerensen Kim Hybholt | Venetian blinds with solar cells and application and method |
| CN104201222A (en) * | 2014-09-03 | 2014-12-10 | 奥特斯维能源（太仓）有限公司 | Nonopaque crystalline-silicon solar cell module and production method thereof |
| WO2017185826A1 (en) * | 2016-04-28 | 2017-11-02 | 乐叶光伏科技有限公司 | Connecting structure with transparent electrode crystalline silicon photovoltaic cell |
| CN211151909U (en) * | 2020-02-17 | 2020-07-31 | 横店集团东磁股份有限公司 | Shutter photovoltaic blade |
| CN111653633A (en) * | 2020-06-03 | 2020-09-11 | 东方日升新能源股份有限公司 | Solar cell with decoration, preparation method and cell module |
| CN212625597U (en) * | 2020-06-03 | 2021-02-26 | 东方日升新能源股份有限公司 | Solar cell with decoration and cell module |
-
2021
- 2021-07-20 CN CN202110819311.0A patent/CN113540292A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003221896A (en) * | 2002-01-30 | 2003-08-08 | Sekisui House Ltd | Louver device equipped with function of photovoltaic power generation |
| WO2012143009A1 (en) * | 2011-04-18 | 2012-10-26 | Soerensen Kim Hybholt | Venetian blinds with solar cells and application and method |
| CN104201222A (en) * | 2014-09-03 | 2014-12-10 | 奥特斯维能源（太仓）有限公司 | Nonopaque crystalline-silicon solar cell module and production method thereof |
| WO2017185826A1 (en) * | 2016-04-28 | 2017-11-02 | 乐叶光伏科技有限公司 | Connecting structure with transparent electrode crystalline silicon photovoltaic cell |
| CN211151909U (en) * | 2020-02-17 | 2020-07-31 | 横店集团东磁股份有限公司 | Shutter photovoltaic blade |
| CN111653633A (en) * | 2020-06-03 | 2020-09-11 | 东方日升新能源股份有限公司 | Solar cell with decoration, preparation method and cell module |
| CN212625597U (en) * | 2020-06-03 | 2021-02-26 | 东方日升新能源股份有限公司 | Solar cell with decoration and cell module |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114482689A (en) * | 2022-02-23 | 2022-05-13 | 永臻科技股份有限公司 | High printing opacity full glass photovoltaic guardrail |
| CN115126400A (en) * | 2022-06-27 | 2022-09-30 | 永臻科技股份有限公司 | Sound insulation type photovoltaic louver blade and preparation method thereof |
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