CN113533845B - On-chip radio frequency power meter, chip, radio device and electronic equipment - Google Patents
On-chip radio frequency power meter, chip, radio device and electronic equipment Download PDFInfo
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- CN113533845B CN113533845B CN202110763634.2A CN202110763634A CN113533845B CN 113533845 B CN113533845 B CN 113533845B CN 202110763634 A CN202110763634 A CN 202110763634A CN 113533845 B CN113533845 B CN 113533845B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R22/00—Arrangements for measuring time integral of electric power or current, e.g. electricity meters
- G01R22/06—Arrangements for measuring time integral of electric power or current, e.g. electricity meters by electronic methods
- G01R22/08—Arrangements for measuring time integral of electric power or current, e.g. electricity meters by electronic methods using analogue techniques
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The application discloses an on-chip radio frequency power meter, a chip, a radio device and an electronic device, which realizes high-precision power detection of an on-chip radio frequency power module. The on-chip radio frequency power meter is used for detecting an on-chip radio frequency power module in the same integrated circuit, the on-chip radio frequency power meter is connected with a load module, and the load impedance of the load module is variable impedance and/or impedance containing an imaginary part. The on-chip radio frequency power meter includes: the current detection module is connected with the on-chip radio frequency power module and is used for sampling the current of the on-chip radio frequency power module to obtain current sampling data; the voltage detection module is connected with the on-chip radio frequency power module and is used for sampling the voltage of the on-chip radio frequency power module to obtain voltage sampling data; and the signal processing module is used for obtaining the current power value of the on-chip radio frequency power module according to the current sampling data and the voltage sampling data.
Description
Technical Field
The invention relates to the technical field of radio frequency power measurement, in particular to an on-chip radio frequency power meter, a chip, a radio device and electronic equipment.
Background
The radio frequency power meter is a component for detecting the power of the radio frequency power module. For the on-chip radio frequency power system with high integration level, because the power detection point is difficult to be led out, an on-chip radio frequency power meter is required to be respectively equipped for each on-chip radio frequency power module integrated in the on-chip radio frequency power system, so that the high-precision power detection of the on-chip radio frequency power module is realized.
Disclosure of Invention
In view of this, the invention provides an on-chip radio frequency power meter, a chip, a radio device and an electronic device, so as to implement high-precision power detection on an on-chip radio frequency power module.
An on-chip radio frequency power meter is applied to detecting on-chip radio frequency power modules in the same integrated circuit, the on-chip radio frequency power meter is connected with a load module, and the load impedance of the load module is variable impedance and/or impedance containing an imaginary part; the on-chip radio frequency power meter includes:
the current detection module is connected with the on-chip radio frequency power module and is used for sampling the current of the on-chip radio frequency power module to obtain current sampling data;
the voltage detection module is connected with the on-chip radio frequency power module and is used for sampling the voltage of the on-chip radio frequency power module to obtain voltage sampling data; and
and the signal processing module is respectively connected with the current detection module and the voltage detection module and is used for obtaining the current power value of the on-chip radio frequency power module according to the current sampling data and the voltage sampling data.
Optionally, the signal processing module includes a first multiplying unit and a first signal processing unit;
the first multiplying unit is respectively connected with the current detection module, the voltage detection module and the first signal processing unit, and is used for multiplying the current sampling data and the voltage sampling data to obtain a first analog operation result; and
the first signal processing unit is configured to process the first analog operation result to obtain the current power value.
Optionally, the signal processing module further includes a first current processing unit and a first voltage processing unit;
the first current processing unit is connected with the current detection module and is used for processing the current sampling data to obtain a current value;
the first voltage processing unit is connected with the voltage detection module and used for processing the voltage sampling data to obtain a current voltage value.
Optionally, the signal processing module includes a second current processing unit, a second voltage processing unit, a second multiplying unit, and a second signal processing unit;
the second multiplying unit is connected with the current detection module through the second current processing unit and connected with the voltage detection module through the second voltage processing unit respectively; the second signal processing unit is connected with the second multiplying unit;
the second current processing unit is used for carrying out signal processing on the current sampling data to obtain first current data; the second voltage processing unit is used for carrying out signal processing on the voltage sampling data to obtain first voltage data; the second multiplication unit is used for performing multiplication operation on the first current data and the first voltage data to obtain a second analog operation result; and
and the second signal processing unit is used for processing the second analog operation result to obtain the current power value.
Optionally, the signal processing module includes a third current processing unit, a third voltage processing unit, and a third signal processing unit;
the third signal processing unit is respectively connected with the current detection module through the third current processing unit and connected with the voltage detection module through the third voltage processing unit;
the third current processing unit is used for performing signal processing on the current sampling data to obtain second current data; the third voltage processing unit is used for carrying out signal processing on the voltage sampling data to obtain second voltage data; and
the third signal processing unit is used for obtaining the current power value according to the second current data and the second voltage data.
Optionally, the current detection module is a differential mode current detection module or a single-ended mode current detection module.
Optionally, when the current detection module is a differential mode current detection module, the current detection module includes: a primary side inductance coil with differential input and two secondary side inductance coils with differential output;
the output current of the on-chip radio frequency power module flows in from the differential input end of the primary side inductance coil and flows out from the differential output end of the first secondary side inductance coil; and the differential output end of the second secondary side inductance coil is a sampling signal end.
Optionally, when the current detection module is a single-ended current detection module, the current detection module includes: the primary side inductance coil with single-ended input and the secondary side inductance coils with two single-ended outputs;
the output current of the on-chip radio frequency power module flows into the primary side inductance coil from a single end and is output from a single end of the first secondary side inductance coil; the single end of the second secondary side inductance coil is a sampling signal end.
Optionally, the voltage detection module is a differential mode voltage detection module or a single-ended mode voltage detection module.
Optionally, when the voltage detection module is a differential mode voltage detection module, the voltage detection module includes: the first capacitor, the second capacitor, the third capacitor and the fourth capacitor are sequentially connected in series;
one end of the first capacitor, which is far away from the second capacitor, and one end of the fourth capacitor, which is far away from the third capacitor, jointly form an output voltage end of the on-chip radio frequency power module; the first capacitor is connected with one end of the second capacitor, and the first capacitor and one end of the fourth capacitor, which are connected with one end of the third capacitor, jointly form a sampling signal end; one end of the second capacitor connected with the third capacitor is grounded.
Optionally, when the voltage detection module is a single-ended voltage detection module, the voltage detection module includes: the first capacitor and the second capacitor are connected in series;
one end of the first capacitor, which is far away from the second capacitor, is an output voltage end of the on-chip radio frequency power module; one end of the first capacitor connected with the second capacitor is a sampling signal end.
A chip, comprising:
an on-chip radio frequency power module;
a load module matched with the on-chip radio frequency power module; and
the on-chip radio frequency power meter is connected with the on-chip radio frequency power module and used for detecting the current power value of the on-chip radio frequency power module in real time;
wherein the load impedance of the load module is a variable impedance and/or an impedance comprising an imaginary part.
Optionally, when the chip includes a plurality of on-chip rf power modules, for at least part of the on-chip rf power modules:
each on-chip radio frequency power module is provided with one on-chip radio frequency power meter.
Optionally, the chip is a millimeter wave chip.
Optionally, the chip is an AiP structure chip or an AoC structure chip.
A radio device, comprising:
a carrier;
the chip is arranged on the carrier;
an antenna disposed on the carrier or integrated into the die and disposed on the carrier;
the chip is connected with the antenna and used for transmitting and receiving radio signals.
An electronic device, comprising:
an apparatus body; and
the radio device is arranged on the equipment body;
wherein the radio device is used for object detection and/or communication.
According to the technical scheme, the power value is calculated by simultaneously measuring the voltage and the current of the on-chip radio frequency power module, and the calculated power value has the characteristic of high precision. Moreover, when the load impedance is variable impedance and/or impedance including imaginary part under real scene, it can respond in time and show good sensitivity.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the prior art descriptions will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic structural diagram of an on-chip rf power meter disclosed in an embodiment of the present invention;
FIG. 2 is a schematic diagram of a signal processing module in the on-chip RF power meter shown in FIG. 1;
FIG. 3 is a schematic diagram of another structure of a signal processing module in the on-chip RF power meter shown in FIG. 1;
FIG. 4 is a schematic diagram of another structure of a signal processing module in the on-chip RF power meter shown in FIG. 1;
FIG. 5 is a schematic diagram of another structure of a signal processing module in the on-chip RF power meter shown in FIG. 1;
FIG. 6 is a schematic diagram of a current detection module in the on-chip RF power meter shown in FIG. 1;
FIG. 7 is a schematic diagram of another structure of a current detection module in the on-chip RF power meter shown in FIG. 1;
FIG. 8 is a schematic diagram of a voltage detection module in the on-chip RF power meter shown in FIG. 1;
fig. 9 is a schematic diagram of another structure of a voltage detection module in the on-chip rf power meter shown in fig. 1.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, belong to the protection scope of the present invention.
The embodiment of the invention discloses an on-chip radio frequency power meter which is applied to detecting an on-chip radio frequency power module in the same integrated circuit, wherein the on-chip radio frequency power meter is connected with a load module, and the load impedance of the load module is variable impedance and/or impedance containing an imaginary part. Referring to fig. 1, the on-chip rf power meter includes a current detection module 1, a voltage detection module 2, and a signal processing module 3;
the current detection module 1 is connected with the on-chip radio frequency power module and is used for sampling the current of the on-chip radio frequency power module to obtain current sampling data;
the voltage detection module 2 is connected with the on-chip radio frequency power module and is used for sampling the voltage of the on-chip radio frequency power module to obtain voltage sampling data;
the signal processing module 3 is respectively connected with the current detection module 1 and the voltage detection module 2, and is used for obtaining the current power value of the on-chip radio frequency power module according to the current sampling data and the voltage sampling data.
The working principle and the beneficial effects of the embodiment of the invention are analyzed as follows:
physically, the power can be calculated by any two of voltage, current and impedance. The impedance is a complex number, and its real part R is called resistance and its imaginary part jX is called reactance. The real and imaginary parts of the impedance produce real and imaginary power, respectively, but usually only real power can be actually transmitted and utilized.
For the on-chip rf power module, the load impedance is a known constant resistance in an ideal scenario (i.e. the imaginary part of the load impedance is equal to zero, the load impedance is a real number, and the real number is a known constant value in the ideal scenario), such as 50 ohms and 75 ohms, which are common. For an ideal scene that the load impedance of the on-chip radio frequency power module is a resistor with a known fixed value, the power value can be accurately calculated in real time only by measuring the current or the voltage of the on-chip radio frequency power module. However, in real situations, the imaginary part of the load impedance may not be zero, and the magnitude of the real and/or imaginary part of the load impedance may not be constant, and the power value can no longer be accurately calculated by measuring the current or voltage of the on-chip rf power module.
In order to improve the power detection accuracy, the embodiment of the invention abandons the mode of calculating the power value by singly measuring the current or the voltage of the on-chip radio frequency power module, and calculates the power value by simultaneously measuring the voltage and the current of the on-chip radio frequency power module, and the calculated power value has the characteristic of high precision. Moreover, when the load impedance is variable impedance and/or impedance including imaginary part under real scene, it can respond in time and show good sensitivity.
Optionally, on the basis of the on-chip radio frequency power meter shown in fig. 1, the signal processing module 3 specifically includes: a first multiplying unit 301 and a first signal processing unit 302, as shown in fig. 2;
the first multiplying unit 301 is connected to the current detecting module 1, the voltage detecting module 2 and the first signal processing unit 302, and is configured to multiply the current and voltage sampling data output by the current detecting module 1 and the voltage detecting module 2 to obtain a first analog operation result; the multiplication unit 301 is actually an analog multiplier, which is an active nonlinear device that performs a multiplication function on two input analog signals;
the first signal processing unit 302 is configured to process (for example, shape, filter, amplify, and perform analog-to-digital conversion on the first analog operation result output by the first multiplying unit 301, so as to obtain a current power value of the on-chip rf power module.
Optionally, on the basis of the on-chip rf power meter shown in fig. 2, the signal processing module 3 further includes: a first current processing unit 303 and a first voltage processing unit 304, as shown in fig. 3;
the first current processing unit 303 is connected to the current detection module 1, and is configured to process current sampling data output by the current detection module 1 to obtain a current value;
the first voltage processing unit 304 is connected to the voltage detection module 2, and is configured to process the voltage sampling data output by the voltage detection module 2 to obtain a current voltage value.
Compared with fig. 2, the output of the current detection module 1 in the on-chip rf power meter shown in fig. 3 is sent to the first current processing unit 303 in addition to the first multiplying unit 301; the output of the voltage detection block 2 is sent to the first voltage processing unit 304 in addition to the first multiplying unit 301. The first current processing unit 303 and the first voltage processing unit 304 respectively process (for example, shaping, filtering, amplifying, analog-to-digital converting, and other processing operations) the input current and voltage sampling data to obtain a current value and a voltage value of the on-chip rf power module, and a load impedance value of the on-chip rf power module can be obtained through operation, so that a change of the load impedance of the on-chip rf power module is reflected in real time, and more comprehensive detection is realized.
Optionally, on the basis of the on-chip rf power meter shown in fig. 1, the signal processing module 3 specifically includes: a second current processing unit 311, a second voltage processing unit 312, a second multiplying unit 313, and a second signal processing unit 314, as shown in fig. 4;
the second multiplying unit 313 is connected to the current detecting module 1 through the second current processing unit 311, and is connected to the voltage detecting module 2 through the second voltage processing unit 312; the second signal processing unit 314 is connected to the second multiplying unit 313;
the second current processing unit 311 is configured to perform signal processing (for example, amplification processing) on the current sampling data output by the current detection module 1 to obtain first current data;
the second voltage processing unit 312 is configured to perform signal processing (for example, amplification processing) on the voltage sampling data output by the voltage detection module 2 to obtain first voltage data;
the second multiplying unit 313 is configured to perform a multiplication operation on the current and voltage data output by the second current processing unit 311 and the second voltage processing unit 312 to obtain a second analog operation result;
the second signal processing unit 314 is configured to process the second analog operation result output by the second multiplying unit 313 to obtain a current power value of the on-chip radio frequency power module.
Compared to fig. 2, the second multiplying unit 313 in the on-chip rf power meter shown in fig. 4 receives the signals processed by the second current processing unit 311 and the second voltage processing unit 312, respectively, so the structure of the second multiplying unit 313 in fig. 4 is simpler than that of the first multiplying unit 302 in fig. 2.
Optionally, on the basis of the on-chip rf power meter shown in fig. 1, the signal processing module 3 specifically includes a third current processing unit 321, a third voltage processing unit 322, and a third signal processing unit 323, as shown in fig. 5;
the third signal processing unit 323 is connected to the current detection module 1 through the third current processing unit 321, and connected to the voltage detection module 2 through the third voltage processing unit 322;
the third current processing unit 311 is configured to perform signal processing (for example, shaping, filtering, amplifying, analog-to-digital converting, and other processing operations) on the current sampling data output by the current detection module 1 to obtain second current data;
the third voltage processing unit 312 is configured to perform signal processing (for example, shaping, filtering, amplifying, analog-to-digital converting, and other processing operations) on the voltage sampling data output by the voltage detection module 2 to obtain second voltage data;
the third signal processing unit 323 is configured to obtain a current power value of the on-chip rf power module according to the second current and voltage data output by the third current processing unit 311 and the third voltage processing unit 312.
Compared with fig. 4, in the on-chip rf power meter shown in fig. 5, the signals processed by the third current processing unit 321 and the third voltage processing unit 322 are directly sent to the third signal processing unit 323, since no multiplication unit performs multiplication, the operation speed of the on-chip rf power meter is faster, but correspondingly, higher requirements are put forward on the processing capabilities of the third voltage processing unit 321 and the third current processing unit 321, and the on-chip rf power meter is suitable for a system requiring fast detection.
Alternatively, in any of the embodiments disclosed above, the current detection module 1 may induce a current by the electromagnetic induction principle of an inductor or a transformer, for example, as shown in fig. 6 or fig. 7.
Fig. 6 is a current detection module in differential mode, which includes: a primary side inductance coil with differential input and two secondary side inductance coils with differential output;
the output current of the on-chip radio frequency power module flows in from the differential input end of the primary side inductance coil and flows out from the differential output end of the first secondary side inductance coil; the differential output end of the second secondary side inductance coil is a sampling signal end;
in fig. 6, I _ inp and I _ inn denote the differential input terminals of the primary inductor, I _ outp and I _ outn denote the differential output terminals of the first secondary inductor, and I _ sense and I _ sensen denote the differential output terminals of the second secondary inductor.
FIG. 7 is a single-ended mode current sense module, comprising: the primary side inductance coil with single-ended input and the secondary side inductance coils with two single-ended outputs;
the output current of the on-chip radio frequency power module flows into the primary side inductance coil from the single end and is output from the single end of the first secondary side inductance coil; the single end of the second secondary side inductance coil is a sampling signal end number;
in fig. 7, the single-ended input of the primary inductor is denoted by I _ in, the single-ended output of the first secondary inductor is denoted by I _ out, and the single-ended output of the second secondary inductor is denoted by I _ sense.
Optionally, in any of the embodiments disclosed above, the voltage detection module 2 may obtain the voltage by means of capacitive voltage division, as shown in fig. 8 or fig. 9.
Fig. 8 is a voltage detection module in differential mode, which includes: the first capacitor, the second capacitor, the third capacitor and the fourth capacitor are sequentially connected in series;
one end of the first capacitor, which is far away from the second capacitor, and one end of the fourth capacitor, which is far away from the third capacitor, jointly form an output voltage end of the on-chip radio frequency power module; the first capacitor is connected with one end of the second capacitor, and the first capacitor and one end of the fourth capacitor, which are connected with one end of the third capacitor, form a sampling signal end together; one end of the second capacitor connected with the third capacitor is grounded;
in fig. 8, the differential output terminal is denoted by V _ outp and V _ outn, and the sampling signal terminal is denoted by V _ sense and V _ sense, respectively.
FIG. 9 is a single-ended mode voltage detection module, comprising: the first capacitor and the second capacitor are connected in series; one end of the first capacitor, which is far away from the second capacitor, is an output voltage end of the on-chip radio frequency power module; one end of the first capacitor connected with the second capacitor is a sampling signal end;
in fig. 9, the output terminal is denoted by V _ out, and the sampling signal terminal is denoted by V _ sense, respectively.
The embodiment of the invention also discloses a chip, which comprises: an on-chip radio frequency power system, a load module matched with the on-chip radio frequency power module, and any one of the on-chip radio frequency power meters disclosed above; the on-chip radio frequency power meter is connected with the on-chip radio frequency power module and is used for detecting the current power value of the on-chip radio frequency power module in real time;
wherein the load impedance of the load module is a variable impedance and/or an impedance comprising an imaginary part.
Optionally, when the chip includes a plurality of on-chip rf power modules, for at least part of the on-chip rf power modules:
each on-chip radio frequency power module is respectively provided with one on-chip radio frequency power meter.
Optionally, in any one of the chips disclosed above, the chip is a millimeter wave chip.
Optionally, in any one of the chips disclosed above, the chip is an AiP structure chip or an AoC structure chip.
The embodiment of the invention also discloses a radio device, which comprises:
a carrier;
any of the dies disclosed above, disposed on a carrier;
an antenna disposed on the carrier or integrated into the die and disposed on the carrier;
the chip is connected with the antenna and used for transmitting and receiving radio signals.
The embodiment of the invention also discloses an electronic device, which comprises:
an apparatus body; and
the radio device disposed on the apparatus body;
wherein the radio device is used for object detection and/or communication.
In the present specification, the embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (11)
1. A radio device for object detection, the radio device comprising:
a carrier;
a die disposed on the carrier;
an antenna disposed on the carrier or integrated into the die and disposed on the carrier;
the chip is connected with the antenna and used for carrying out target detection by transmitting and receiving radio signals;
the chip is integrated with: the on-chip radio frequency power module and the on-chip radio frequency power meter are connected with the on-chip radio frequency power module; the on-chip radio frequency power module is connected with a load module, and the load impedance of the load module is variable impedance and/or impedance containing an imaginary part;
the on-chip radio frequency power meter includes:
the current detection module is connected with the on-chip radio frequency power module and is used for sampling the current of the on-chip radio frequency power module in an inductive coil or transformer mode to obtain current sampling data;
the voltage detection module is connected with the on-chip radio frequency power module and is used for sampling the voltage of the on-chip radio frequency power module in a capacitance voltage division mode to obtain voltage sampling data; and
the signal processing module is respectively connected with the current detection module and the voltage detection module and is used for obtaining the current power value of the on-chip radio frequency power module according to the current sampling data and the voltage sampling data;
the voltage detection module is a differential mode voltage detection module or a single-ended mode voltage detection module, the current detection module is a differential mode current detection module, and the current detection module comprises: a primary side inductance coil with differential input and two secondary side inductance coils with differential output;
the output current of the on-chip radio frequency power module flows in from the differential input end of the primary side inductance coil and flows out from the differential output end of the first secondary side inductance coil; the differential output end of the second secondary side inductance coil is a sampling signal end.
2. The radio device for object detection according to claim 1, wherein the signal processing module comprises a first multiplying unit and a first signal processing unit;
the first multiplying unit is respectively connected with the current detecting module, the voltage detecting module and the first signal processing unit, and is used for multiplying the current sampling data and the voltage sampling data to obtain a first analog operation result; and
the first signal processing unit is configured to process the first analog operation result to obtain the current power value.
3. The radio device for object detection according to claim 2, wherein the signal processing module further comprises a first current processing unit and a first voltage processing unit;
the first current processing unit is connected with the current detection module and used for processing the current sampling data to obtain a current value;
the first voltage processing unit is connected with the voltage detection module and used for processing the voltage sampling data to obtain a current voltage value.
4. The radio device for object detection according to claim 1, wherein the signal processing module includes a second current processing unit, a second voltage processing unit, a second multiplying unit, and a second signal processing unit;
the second multiplying unit is connected with the current detection module through the second current processing unit and connected with the voltage detection module through the second voltage processing unit respectively; the second signal processing unit is connected with the second multiplying unit;
the second current processing unit is used for carrying out signal processing on the current sampling data to obtain first current data; the second voltage processing unit is used for carrying out signal processing on the voltage sampling data to obtain first voltage data; the second multiplication unit is used for performing multiplication operation on the first current data and the first voltage data to obtain a second analog operation result; and
and the second signal processing unit is used for processing the second analog operation result to obtain the current power value.
5. The radio device for object detection according to claim 1, wherein the signal processing module includes a third current processing unit, a third voltage processing unit, and a third signal processing unit;
the third signal processing unit is respectively connected with the current detection module through the third current processing unit and connected with the voltage detection module through the third voltage processing unit;
the third current processing unit is used for performing signal processing on the current sampling data to obtain second current data; the third voltage processing unit is used for carrying out signal processing on the voltage sampling data to obtain second voltage data; and
the third signal processing unit is used for obtaining the current power value according to the second current data and the second voltage data.
6. The radio device for object detection according to claim 1, wherein when the voltage detection module is a differential mode voltage detection module, the voltage detection module comprises: the first capacitor, the second capacitor, the third capacitor and the fourth capacitor are sequentially connected in series;
one end of the first capacitor, which is far away from the second capacitor, and one end of the fourth capacitor, which is far away from the third capacitor, jointly form an output voltage end of the on-chip radio frequency power module; the first capacitor is connected with one end of the second capacitor, and the first capacitor and one end of the fourth capacitor, which are connected with one end of the third capacitor, jointly form a sampling signal end; one end of the second capacitor connected with the third capacitor is grounded.
7. The radio device for object detection according to claim 1, wherein when the voltage detection module is a single-ended mode voltage detection module, the voltage detection module comprises: the first capacitor and the second capacitor are connected in series;
one end of the first capacitor, which is far away from the second capacitor, is an output voltage end of the on-chip radio frequency power module; one end of the first capacitor connected with the second capacitor is a sampling signal end.
8. The radio device for object detection as defined in claim 1, wherein when the chip includes a plurality of on-chip radio frequency power modules, for at least some on-chip radio frequency power modules:
each on-chip radio frequency power module is respectively provided with one on-chip radio frequency power meter.
9. The radio device for object detection as defined in claim 1, wherein the chip is a millimeter wave chip.
10. The radio device for object detection according to claim 1, wherein the chip is an AiP-structured chip or an AoC-structured chip.
11. An electronic device, comprising:
an apparatus body; and
the radio device of any of claims 1-10 disposed on the equipment body;
wherein the radio device is used for target detection.
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