CN113532687B - Temperature sensing circuit integrated in display panel - Google Patents
Temperature sensing circuit integrated in display panel Download PDFInfo
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- CN113532687B CN113532687B CN202110644653.3A CN202110644653A CN113532687B CN 113532687 B CN113532687 B CN 113532687B CN 202110644653 A CN202110644653 A CN 202110644653A CN 113532687 B CN113532687 B CN 113532687B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K13/00—Thermometers specially adapted for specific purposes
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
- G01K1/02—Means for indicating or recording specially adapted for thermometers
- G01K1/022—Means for indicating or recording specially adapted for thermometers for recording
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
- G01K1/02—Means for indicating or recording specially adapted for thermometers
- G01K1/024—Means for indicating or recording specially adapted for thermometers for remote indication
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management
Abstract
The invention belongs to the technical field of display panels, and particularly relates to a temperature sensing circuit integrated in a display panel, which is characterized by comprising a sensing circuit, a voltage detection circuit and a voltage detection circuit, wherein the sensing circuit is arranged near a GOA and connected with the GOA circuit, and the external detection system is used for detecting voltage change in the sensing circuit; the sensing circuit comprises a first switch TFT, a second switch TFT and a driving TFT, wherein the first switch TFT is connected with the grid electrode of the driving TFT and is provided with a common end G, and the second switch TFT is connected with the source electrode of the driving TFT and is provided with a common end S, so that the first switch TFT and the second switch TFT respectively control the potential of the grid electrode of the driving TFT and the potential of the source electrode; the external detection system is connected with the second switch TFT. In the circuit, the temperature sensing circuit is integrated in the GOA region, so that the electrical property and the temperature of the TFT in the GOA region can be monitored in real time before delivery, and the monitoring of the status of the iso in the GOA region is facilitated, and the delivery yield is improved. And the circuit has simple structure and is convenient to realize and popularize.
Description
Technical Field
The invention belongs to the technical field of display panels, and particularly relates to a temperature sensing circuit integrated in a display panel.
Background
At present, the driving of the horizontal scanning lines of the AMOLED display panel is realized by an external integrated circuit, the external integrated circuit can control the progressive opening of each level of row scanning lines, and a GOA (Gate Driver on Array) method is adopted, so that the row scanning driving circuit can be integrated on a display panel substrate, the number of external ICs can be reduced, the production cost of the display panel is reduced, and the narrow frame of the display device can be realized. However, the GOA region is narrow, power consumption is high, heat is liable to be concentrated, and furthermore, the threshold voltage negative bias of the TFT is liable to cause heat concentration in the GOA region.
Disclosure of Invention
In order to solve the above-mentioned problems, a primary object of the present invention is to provide a temperature sensing circuit integrated in a display panel, which is capable of monitoring the electrical property and temperature of a TFT in a GOA area in real time before shipment through integrating the temperature sensing circuit in the GOA area, thereby facilitating monitoring of the status of the buffer in the GOA area and improving the yield of shipment.
Another object of the present invention is to provide a temperature sensing circuit integrated in a display panel, which has a simple structure and is convenient to implement and popularize.
In order to achieve the above object, the present invention has the following technical scheme.
A temperature sensing circuit integrated in a display panel, wherein the circuit comprises a sensing circuit which is arranged near the GOA and connected with the GOA circuit, and an external detection system which is used for detecting the voltage change in the sensing circuit; the sensing circuit comprises a first switch TFT, a second switch TFT and a driving TFT, wherein the first switch TFT is connected with the grid electrode of the driving TFT and is provided with a common end G, and the second switch TFT is connected with the source electrode of the driving TFT and is provided with a common end S, so that the first switch TFT and the second switch TFT respectively control the potential of the grid electrode of the driving TFT and the potential of the source electrode; the external detection system is connected with the second switch TFT to detect and obtain the voltage change of the common terminal S, feed back the mobility change of the drive TFT, and feed back the temperature change of the drive TFT according to the mobility change of the drive TFT. The specific principle of temperature sensing is that the mobility of the TFT is directly related to the temperature, and the temperature change of the driving TFT is obtained by detecting the mobility feedback of the driving TFT, so that the temperature change of the GOA circuit area can be obtained by feedback. In the circuit, the temperature sensing circuit is integrated in the GOA region, so that the electrical property and the temperature of the TFT in the GOA region can be monitored in real time before delivery, and the monitoring of the status of the iso in the GOA region is facilitated, and the delivery yield is improved. And the circuit has simple structure and is convenient to realize and popularize. In the invention, the number of stages of the sensing circuit and the GOA circuit is 1:1, namely, one sensing circuit is distributed around each stage of GOA circuit, so that the temperature of each stage of GOA circuit can be fed back by detecting the temperature of the sensing circuit.
Further, the circuit further comprises a capacitor Cbt, the gate of the first switch TFT is connected with an n-th GOA circuit output signal G (n), the drain of the first switch TFT is connected to a data signal line date of the dummy pixel, and the source of the first switch TFT, the gate of the driving TFT and one end of the capacitor Cbt are connected and form a common end G.
Further, the gate of the second switch TFT is connected to the output signal G (n) of the GOA circuit of the nth stage, the drain of the second switch TFT, the source of the driving TFT and the other end of the capacitor Cbt are connected and form a common terminal S, and the source of the second switch TFT is connected to an external detection system and forms a common terminal M.
Further, the drain electrode of the driving TFT is connected to the direct current signal source VGH.
Further, the external detection system is a unit in a source IC.
Further, the external detection system comprises a Spre switch, a Sam switch and a sense line, a capacitor sense line is arranged on the sense line, one end of the Spre switch, one end of the Sam switch and one end of the capacitor sense line are connected with a source electrode of the second switch TFT and form a common end M, the other end of the Spre switch is connected to a reset unit Vef of the source IC, and the other end of the Sam switch is connected to the digital-to-analog converter ADC.
Further, the circuit comprises three stages in operation: a P1 phase, a P2 phase and a P3 phase;
stage P1: g (n) and Data rise to high potential, the first and second switching TFTs are turned on, and the Spre switch is turned on, so that the Data signal is written in the common terminal G, the Vref reset signal is written in the common terminal S, and the voltage difference of Vgs is generated by the driving TFTs.
And P2: the Spre switch is turned off and the driving TFT is considered as a stable current source due to the voltage difference of Vgs of the driving TFT, so that the driving TFT generates a current to charge the common terminal M, and the common terminal S has a potential consistent with that of the common terminal M.
And P3: the Sam switch is opened, and the memory cell of the source IC stores the common M potential through the digital-to-analog converter ADC.
Further, in the P1 phase, the driving TFT is in the saturation region, and the current flowing through the driving TFT is as follows:
wherein μ is initial mobility of the driving TFT from factory, Δμ is mobility change of the driving TFT due to temperature increase, W and L are channel width and length of the driving TFT, vdata is a data signal, vref is a reference potential, vth is a threshold voltage, and Cox is thickness of gate dielectric layer of the driving TFT.
Further, in the P2 stage, when the Spre switch is lowered to a low level, the Spre switch is turned off, and the capacitor senseline is continuously charged by the current, and the charging time is very short, which is as us-stage, the driving TFT is approximately considered as a stable current source, and the current flowing through the driving TFT is constant, as shown in the following formula.
I×t＝C sense ×(Vs-Vref) (2)
Wherein t is the charge time of the current to the capacitor senseline (i.e. the time of P2 segment), C sense The parasitic capacitance value of the capacitor senseline is VS, and the potential of the common terminal S detected by the digital-to-analog converter ADC is P3.
Further, when the mobility is not shifted at the time of shipping, the current flowing through T1 is as follows
Further, the formula (1) and the formula (c) are combined2) And (3) obtaining the latest calculation formula of the mobility of the driving TFT, and feeding back the change condition of the temperature according to the change condition of the mobility of the driving TFT:
Vs 0 the voltage value of the S point is obtained by detection of the temperature sensing system when leaving the factory.
Compared with the prior art, the invention has the beneficial effects that the electrical property and the temperature of the TFT in the GOA area can be monitored in real time before delivery by integrating the temperature sensing circuit in the GOA area, thereby being beneficial to monitoring the status of the iso in the GOA area and improving the delivery yield. And the circuit has simple structure and is convenient to realize and popularize. In the invention, the number of stages of the sensing circuit and the GOA circuit is 1:1, namely, one sensing circuit is distributed around each stage of GOA circuit, so that the temperature of each stage of GOA circuit can be fed back by detecting the temperature of the sensing circuit.
Drawings
Fig. 1 is a schematic diagram of the sensing circuit of the present invention when connected to a GOA circuit.
Fig. 2 is a schematic circuit diagram of the present invention.
Fig. 3 is a diagram of the architecture of fig. 1.
Fig. 4 is a timing chart of the present invention.
Fig. 5 is a timing diagram of the present invention.
Fig. 6 is a schematic diagram of the operation of the present invention.
Fig. 7 is a schematic diagram of the mobility change caused by the temperature increase simulated by the present invention.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
A temperature sensing circuit integrated in a display panel, wherein the circuit comprises a sensing circuit which is arranged near the GOA and connected with the GOA circuit, and an external detection system which is used for detecting the voltage change in the sensing circuit; the sensing circuit comprises a first switch TFT T2, a second switch TFT T3 and a drive TFT T1, wherein the first switch TFT T2 is connected with a grid electrode of the drive TFT T1 and is provided with a common end G, and the second switch TFT T3 is connected with a source electrode of the drive TFT T1 and is provided with a common end S, so that the first switch TFT T2 and the second switch TFT T3 respectively control the potential of the grid electrode and the potential of the source electrode of the drive TFT T1; the external detection system is connected with the second switch TFT T3 to detect and obtain the voltage change of the common terminal S, feedback the mobility change of the drive TFT T1, and feedback the temperature change of the drive TFT T1 according to the mobility change of the drive TFT T1.
Further, the circuit further comprises a capacitor Cbt, the gate of the first switch TFT T2 is connected to the output signal G (n) of the GOA circuit of the nth stage, the drain of the first switch TFT T2 is connected to the data signal line date of the dummy pixel, and the source of the first switch TFT T2, the gate of the driving TFT T1 and one end of the capacitor Cbt are connected and form a common terminal G.
Further, the gate of the second switch TFT T3 is connected to the output signal G (n) of the GOA circuit of the nth stage, the drain of the second switch TFT T3, the source of the driving TFT T1, and the other end of the capacitor Cbt are connected to form a common terminal S, and the source of the second switch TFT T3 is connected to an external detection system and forms a common terminal M.
Further, the drain electrode of the driving TFT T1 is connected to the direct current signal source VGH.
Further, the external detection system is a unit in a source IC. Source ICs are known in the art.
Further, the external detection system includes a Spre switch, a Sam switch, and a capacitor sense line, where one end of the Spre switch, one end of the Sam switch, and one end of the capacitor sense line are connected to the source of the second switch TFT T3 and form a common terminal M, the other end of the Spre switch is connected to the reset unit Vef of the source IC, and the other end of the Sam switch is connected to the digital-to-analog converter ADC.
Further, the circuit comprises three stages in operation: a P1 phase, a P2 phase and a P3 phase;
stage P1: g (n) and Data rise to high potential, the first switching TFT T2 and the second switching TFT T3 are turned on, and the Spre switch is turned on, so that the Data signal is written into the common terminal G, the Vref reset signal is written into the common terminal S, and the voltage difference of Vgs is generated by the driving TFT T1.
And P2: the Spre switch is turned off, and the driving TFT T1 is considered as a stable current source due to the voltage difference of Vgs of the driving TFT T1, so that the driving TFT T1 generates a current to charge the common terminal M, and the common terminal S has a potential identical to that of the common terminal M.
And P3: the Sam switch is opened, and the memory cell of the source IC stores the common M potential through the digital-to-analog converter ADC.
Further, in the P1 phase, the driving TFT T1 is in the saturation region, and the current flowing through the driving TFT T1 is as follows:
wherein μ is initial mobility of the driving TFT T1 when shipped, Δμ is mobility change of the driving TFT T1 due to temperature increase, W and L are channel width and length of the driving TFT T1, vdata is a data signal, vref is a reference potential, vth is a threshold voltage, and Cox is thickness of a gate dielectric layer of the driving TFT T1.
Further, in the P2 stage, when the Spre switch is lowered to a low level, the Spre switch is turned off, and the current continuously charges the capacitor sense line, and since the charging time is extremely short, the driving TFT T1 is approximately considered as a stable current source, and the current flowing through the driving TFT T1 is constant, as shown in the following formula.
I×t＝C sense ×(Vs-Vref) (2)
Wherein t is the charging time of the current to the capacitor sense line (i.e. the time of P2 segment), C sense The parasitic capacitance value of the capacitor senseline is VS, and the potential of the common terminal S detected by the digital-to-analog converter ADC is P3.
Further, when the mobility is not shifted at the time of shipping, the current flowing through T1 is as follows
Further, the latest calculation formula of the mobility of the driving TFT T1 is obtained by combining the formula (1), the formula (2) and the formula (3), and the temperature change condition can be obtained by feedback according to the mobility change condition of the driving TFT T1:
Vs 0 the voltage value of the S point is obtained by detection of the temperature sensing system when leaving the factory.
The invention simulates mobility change caused by temperature increase, as shown in fig. 7, mobility is 1.2 times of the original mobility, and VS voltage is increased by 1.21 times.
In fig. 1, CK1 and CK2 are high-frequency ac signals, VGH and VGL are dc signal sources, and STV is a first-stage trigger signal source. Data and Sense are sources of source IC. In the invention, G (n) is GOA output signal of nth stage, data is Data signal line of dummy pixel, sense is sense signal line of glass end, i.e. signal line of capacitor sense line. Vref is the reference potential of the external source IC system, ADC is a digital-to-analog converter, spre and Sam are the switching signals of the source IC.
Compared with the prior art, the invention has the beneficial effects that the electrical property and the temperature of the TFT in the GOA area can be monitored in real time before delivery by integrating the temperature sensing circuit in the GOA area, thereby being beneficial to monitoring the status of the iso in the GOA area and improving the delivery yield. And the circuit has simple structure and is convenient to realize and popularize. In the invention, the number of stages of the sensing circuit and the GOA circuit is 1:1, namely, one sensing circuit is distributed around each stage of GOA circuit, so that the temperature of each stage of GOA circuit can be fed back by detecting the temperature of the sensing circuit.
The foregoing is only a preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art, who is within the scope of the present invention, should be covered by the protection scope of the present invention by making equivalents and modifications to the technical solution and the inventive concept thereof.
Claims (5)
1. A temperature sensing circuit integrated in a display panel, wherein the circuit comprises a sensing circuit which is arranged near the GOA and connected with the GOA circuit, and an external detection system which is used for detecting the voltage change in the sensing circuit; the sensing circuit comprises a first switch TFT, a second switch TFT and a driving TFT, wherein the first switch TFT is connected with the grid electrode of the driving TFT and is provided with a common end G, and the second switch TFT is connected with the source electrode of the driving TFT and is provided with a common end S, so that the first switch TFT and the second switch TFT respectively control the potential of the grid electrode of the driving TFT and the potential of the source electrode; the external detection system is connected with the second switch TFT to detect and obtain the voltage change of the public terminal S, feed back the mobility change of the drive TFT, and feed back the temperature change of the drive TFT according to the mobility change of the drive TFT;
the circuit also comprises a capacitor Cbt, wherein the grid electrode of the first switch TFT is connected with a GOA circuit output signal G (n) of an nth stage, the drain electrode of the first switch TFT is connected to a data signal line date of a dummy pixel, and the source electrode of the first switch TFT, the grid electrode of the driving TFT and one end of the capacitor Cbt are connected and form a common end G;
the grid electrode of the second switch TFT is connected with an output signal G (n) of an n-th GOA circuit, the drain electrode of the second switch TFT, the source electrode of the driving TFT and the other end of the capacitor Cbt are connected and form a common end S, and the source electrode of the second switch TFT is connected with an external detection system and form a common end M;
the drain electrode of the driving TFT is connected to a direct current signal source VGH;
the external detection system is a unit in a source IC;
the external detection system comprises a Spre switch, a Sam switch and a sense line, a capacitor sense line is arranged on the sense line, one end of the Spre switch, one end of the Sam switch and one end of the capacitor sense line are connected with a source electrode of a second switch TFT and form a common end M, the other end of the Spre switch is connected to a reset unit Vef of a source IC, and the other end of the Sam switch is connected to a digital-to-analog converter ADC.
2. A temperature sensing circuit integrated in a display panel according to claim 1, wherein the circuit comprises three phases in operation: a P1 phase, a P2 phase and a P3 phase;
stage P1: g (n) and Data rise to high potential, the first switch TFT and the second switch TFT are turned on, and the Spre switch is turned on, so that the Data signal is written into the common terminal G, the Vref reset signal is written into the common terminal S, and the voltage difference of Vgs is generated by the drive TFT;
and P2: the Spre switch is closed, and the driving TFT is considered as a stable current source due to the voltage difference of Vgs of the driving TFT, so that the driving TFT generates current to charge the common terminal M, and the potential of the common terminal S is consistent with that of the common terminal M;
and P3: the Sam switch is opened, and the memory cell of the source IC stores the common M potential through the digital-to-analog converter ADC.
3. The temperature sensing circuit of claim 2, wherein the driving TFT is in a saturation region during the P1 phase, and the current flowing through the driving TFT is as follows:
wherein μ is initial mobility of the driving TFT from factory, Δμ is mobility change of the driving TFT due to temperature increase, W and L are channel width and length of the driving TFT, vdata is a data signal, vref is a reference potential, vth is a threshold voltage, and Cox is thickness of gate dielectric layer of the driving TFT.
4. A temperature sensing circuit integrated in a display panel according to claim 3, wherein in the P2 stage, when the Spre switch is turned down to a low level, the Spre switch is turned off, the current continues to charge the capacitor sense line, and the driving TFT is considered as a stable current source for the us stage due to the extremely short charging time, and the current flowing through the driving TFT is constant, as shown in the following formula:
I×t＝C sense ×(Vs-Vref) (2)
wherein t is the charging time of the current to the capacitor sense line, i.e. the time of the P2 segment, C sense The parasitic capacitance value of the capacitor sense line is that VS is the potential of the common terminal S detected by the digital-to-analog converter ADC in the P3 stage;
when the mobility is not shifted from the factory, the current flowing through T1 is as follows:
5. the temperature sensing circuit integrated in a display panel according to claim 4, wherein the latest calculation formula of the mobility of the driving TFT is obtained by combining formula (1), formula (2) and formula (3), and the temperature change is obtained by feedback according to the mobility change of the driving TFT:
Vs 0 the voltage value of the S point is obtained by detection of the temperature sensing system when leaving the factory.
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