CN113524025A - SiC single crystal wafer polishing method - Google Patents

SiC single crystal wafer polishing method Download PDF

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CN113524025A
CN113524025A CN202110870849.4A CN202110870849A CN113524025A CN 113524025 A CN113524025 A CN 113524025A CN 202110870849 A CN202110870849 A CN 202110870849A CN 113524025 A CN113524025 A CN 113524025A
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polishing
sic
powder
sic single
abrasive particles
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CN113524025B (en
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苏建修
王占奎
张亚奇
胡楠
李海波
李勇峰
薛明普
陈锡渠
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Henan Institute of Science and Technology
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

The invention discloses a polishing method of SiC single crystal wafer, which adopts a polishing pad containing chemical substances such as reducing agent, oxidizing agent, catalyst and the like, wherein the SiC single crystal wafer is contacted with a convex peak on the surface of the polishing pad under the action of polishing pressure to generate friction and friction heat, the reducing agent releases oxygen, the oxygen and the surface of the SiC single crystal wafer generate oxidation reaction under the action of the catalyst, the friction heat and the like to generate a layer of SiO on the surface2A layer, then removed by abrasive particles having a self-yielding function; the process is carried out alternately, and the surface of the SiC single crystal wafer is globally flattened. Because the abrasive particles with the self-yielding function are adopted, the abrasive particles can yield up and down along with the change of polishing pressure, when the sizes of the abrasive particles are inconsistent or the heights of the convex edges of the abrasive particles are different, the heights of the convex edges of the abrasive particles change along with the change of the pressure in the machining process through the self-yielding performance of the abrasive particles, and the machining process is controlledThe depth cut of each abrasive particle. The polished SiC single crystal wafer has high surface quality, low cost and low waste discharge.

Description

SiC single crystal wafer polishing method
Technical Field
The invention relates to the technical field of ultra-precision machining, in particular to a polishing method of a SiC single crystal wafer.
Background
Single crystal SiC is a third generation semiconductor material developed following first generation semiconductor materials such as Ge and Si, and second generation semiconductor materials such as GaAs and InP, because of the superior performances of wide forbidden band, high breakdown electric field intensity, high thermal conductivity, good thermal stability, high saturation drift velocity, high radiation resistance and the like, has obvious advantages in the fields of high frequency, high temperature, radiation resistance, high power, photoelectron and the like, is a 'core' of a solid-state light source and power electronics and microwave radio-frequency devices, has wide application prospect in the fields of semiconductor illumination, new-generation mobile communication, smart power grids, high-speed rail transit, new energy automobiles, consumer electronics and the like, and the semiconductor material has irreplaceable advantages in the application fields of extreme environments such as aerospace, war industry, nuclear energy and the like, can become a key semiconductor material for supporting the development of information, energy, traffic, national defense and the like, and is also becoming a new strategic high place of the global semiconductor industry.
The use performance and the manufacturing cost of the SiC-based device are important factors for restricting the development of industries such as microelectronics, photoelectronics and the like, but the use performance of the device is closely related to the surface processing quality of the SiC single crystal substrate, so how to process the ultra-smooth and damage-free surface of the SiC single crystal substrate with high precision, high quality, high efficiency and low cost becomes a leading-edge research subject in the technical field of ultra-precision processing. At present, the processing of the SiC single crystal substrate mainly continues to use the traditional processing technology of the crystal substrate: internal circular saw slicing, free abrasive grinding, and Chemical Mechanical Polishing (CMP).
A great deal of research work is carried out on the aspect of ultra-precision processing of single crystal SiC materials at home and abroad, and abundant research results are obtained, but the ultra-precision processing theory of single crystal SiC substrates is not perfect, and a lot of problems, such as the problem of material removal mechanism, the problem of processing efficiency and the like, are not clarified and solved.
The chemical mechanical polishing technology is one of the most effective planarization methods for realizing ultra-smooth and damage-free surface of hard and brittle crystal substrates such as single crystal SiC and the like, and is widely applied to the fields of integrated circuits and semiconductor illumination. Chemical mechanical polishing is a technology combining chemical action and mechanical action and having interaction, but wastes generated in the polishing process cause environmental pollution and the production cost is high. The chemical mechanical polishing of the consolidated abrasive particles is a planarization technology which appears for more than ten years, can effectively improve the removal rate of materials, but still has the defect of higher production cost.
Therefore, how to change the current situation that the polishing process of the single crystal SiC substrate causes environmental pollution and high production cost in the prior art becomes a problem to be solved urgently by the technical personnel in the field.
Disclosure of Invention
The invention aims to provide a SiC single crystal wafer polishing method, which aims to solve the problems in the prior art, improve the surface quality of products, reduce emission, avoid environmental pollution and reduce production cost.
In order to achieve the purpose, the invention provides the following scheme: the invention provides a polishing method of a SiC single wafer, which comprises the following steps:
the method comprises the following steps that firstly, a polishing pad is arranged at the top of a polishing disc, the polishing head is arranged at the top of the polishing pad, a back film is arranged on one side, facing the polishing disc, of the polishing head, a SiC sheet is located between the back film and the polishing pad, the SiC sheet is in contact with convex peaks on the surface of the polishing pad under the pressure action of the polishing head to form a plurality of micro contact areas, and a reducing agent in the polishing pad generates a solid-phase reduction reaction to release oxygen so as to form oxygen enrichment in the micro contact areas;
secondly, under the action of a catalyst, an oxidant, an activator and friction, oxygen and the surface of the SiC piece generate solid-phase oxidation reaction to generate SiO on the surface of the SiC piece2A layer;
step threeOne surface of the polishing pad facing the SiC sheet is provided with abrasive particles, the abrasive particles have a self-conceding function, and the abrasive particles can remove the SiO protruding from the surface of the SiC sheet2SiO of layer, recess2The layer can not be contacted with the abrasive particles and is reserved, and the protruding part on the surface of the SiC piece is exposed out of the SiC single crystal matrix;
fourthly, oxidizing the SiC single crystal matrix exposed from the convex part on the surface of the SiC piece again, removing the oxidized SiC single crystal matrix by abrasive particles, and repeating the first step to the third step until SiO in the concave part on the surface of the SiC piece2The layer is also removed, and the surface of the SiC piece is flattened;
and in the process of the first step to the fourth step, the spray head continuously sprays deionized water to the polishing pad.
Preferably, the reducing agent in the polishing pad is one or more of the following: sodium peroxide powder, potassium chlorate powder and potassium permanganate powder.
Preferably, the oxidizing agent in the polishing pad is one or more of the following: FeSO4Powder, CrO3Powder, sodium hydroxide powder.
Preferably, the catalyst in the polishing pad is one or more of the following: pt powder, MnO2Powder, FeO powder, Fe3O4Powder, iron powder, FeCl3And (3) pulverizing.
Preferably, the active agent in the polishing pad is activated carbon powder or polyethylene glycol powder or a mixture of the two.
Preferably, the abrasive particles in the polishing pad are one or more of the following: diamond micropowder, Al2O3Fine powder and silica fine powder, wherein the grain diameter of the abrasive grains is 15 nm-28 mu m.
Compared with the prior art, the invention has the following technical effects: the polishing method of the SiC single crystal wafer comprises the following steps: step one, a polishing pad is arranged at the top of a polishing disc, a polishing head is arranged at the top of the polishing pad, a back film is arranged on one side of the polishing head, which faces the polishing disc, a SiC sheet is positioned between the back film and the polishing pad, the SiC sheet is contacted with convex peaks on the surface of the polishing pad under the pressure action of the polishing head to form a plurality of micro contact areas, and a reducing agent in the polishing pad generates a solid-phase reduction reaction to release oxygen, so that the oxygen is released in the micro contact areasForming rich oxygen; secondly, under the action of a catalyst, an oxidant, an activator and friction, oxygen and the surface of the SiC piece generate solid-phase oxidation reaction to generate SiO on the surface of the SiC piece2A layer; step three, one surface of the polishing pad facing the SiC sheet is provided with abrasive particles, the abrasive particles have a self-conceding function, and the abrasive particles can remove the protruded SiO on the surface of the SiC sheet2SiO of layer, recess2The layer can not be contacted with the abrasive particles and is reserved, and the protruding part on the surface of the SiC piece is exposed out of the SiC single crystal matrix; fourthly, oxidizing the SiC single crystal matrix exposed from the convex part on the surface of the SiC piece again, removing the oxidized SiC single crystal matrix by abrasive particles, and repeating the first step to the third step until SiO in the concave part on the surface of the SiC piece2The layer is also removed, and the surface of the SiC piece is flattened; during processing, deionized water is sprayed onto the polishing pad as a polishing agent.
According to the invention, the polishing pad containing chemical substances such as a reducing agent, an oxidizing agent, a catalyst and the like is adopted, under the action of polishing pressure, the SiC single crystal wafer is contacted with the convex peaks on the surface of the polishing pad, friction and friction heat are generated on the surfaces between the SiC single crystal wafer and the convex peaks, so that the reducing agent in the polishing pad releases oxygen, and oxygen enrichment is formed in numerous micro-regions between the SiC single crystal wafer and the surface of the polishing pad; secondly, under the action of catalyst, polishing solution and frictional heat, oxygen and the surface of the SiC single crystal wafer are subjected to oxidation reaction to generate a layer of SiO on the surface of the SiC single crystal wafer2A layer; then the abrasive grains with the self-yielding function are removed; the process is carried out alternately, and the surface of the SiC single crystal wafer is globally flattened. The abrasive particles with the self-yielding function are adopted, the abrasive particles can yield up and down along with the change of polishing pressure, the self-adaptability is realized, when the sizes of the abrasive particles are inconsistent and the heights of the convex edges of the abrasive particles are different, the height of the convex edge of the abrasive particles in the machining process is changed along with the change of the pressure through the self-yielding performance of the abrasive particles, the cutting depth of each abrasive particle in the machining process is controlled to be uniform, the polishing precision is improved, the surface quality of the polished SiC single crystal wafer is high, the equipment is simple, and the operation cost is low. Meanwhile, deionized water is used as the polishing solution, so that the production cost is further saved, and the waste discharge is reduced.
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In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without inventive exercise.
FIG. 1 is a schematic view showing the operation of the SiC single wafer polishing method of the present invention;
FIG. 2 is a schematic view of step two of the SiC single wafer polishing method of the present invention;
FIG. 3 is a schematic view showing a third step of the SiC single wafer polishing method of the present invention;
FIG. 4 is a schematic view showing a fourth step of the SiC single wafer polishing method of the present invention;
FIG. 5 is a schematic view showing the depth of abrasive grains embedded in the surface of a workpiece as a function of polishing pressure in the SiC single wafer polishing method of the present invention;
FIG. 6 is a schematic view of a polishing method of a SiC single wafer according to the present invention;
wherein, 1 is a polishing head, 2 is a polishing pad, 3 is a polishing disk, 4 is a back film, 5 is a SiC chip, 6 is a spray head, 7 is SiO2Layer, 8 being abrasive grains, P0、P1、P2Is pressure, and P2﹥P1﹥P0。
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention aims to provide a SiC single crystal wafer polishing method, which aims to solve the problems in the prior art, improve the surface quality of products, reduce emission, avoid environmental pollution and reduce production cost.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Referring to fig. 1 to 6, wherein fig. 1 is a schematic view showing the operation of the SiC single wafer polishing method of the present invention, fig. 2 is a schematic view showing a second step of the SiC single wafer polishing method of the present invention, fig. 3 is a schematic view showing a third step of the SiC single wafer polishing method of the present invention, fig. 4 is a schematic view showing a fourth step of the SiC single wafer polishing method of the present invention, and fig. 5 is a schematic view showing the depth of the abrasive grains embedded in the surface of the workpiece according to the polishing pressure; FIG. 6 is a schematic diagram of a method for polishing a SiC single wafer according to the present invention.
The invention provides a polishing method of a SiC single wafer, which comprises the following steps:
step one, a polishing pad 2 is arranged on the top of a polishing disc 3, a polishing head 1 is arranged on the top of the polishing pad 2, a back film 4 is arranged on one side, facing the polishing disc 3, of the polishing head 1, a SiC sheet 5 is located between the back film 4 and the polishing pad 2, under the pressure action of the polishing head 1, the SiC sheet 5 is in contact with a convex peak (the convex peak is the convex part of abrasive particles 8) on the surface of the polishing pad 2 to form a plurality of micro-contact areas, and a reducing agent in the polishing pad 2 generates a solid-phase reduction reaction to release oxygen and form oxygen enrichment in the micro-contact areas.
Secondly, under the action of a catalyst, an oxidant, an activator and friction, oxygen and the surface of the SiC piece 5 generate solid-phase oxidation reaction to generate SiO on the surface of the SiC piece 52 Layer 7.
Step three, one surface of the polishing pad 2 facing the SiC sheet 5 is provided with abrasive particles 8, the abrasive particles 8 have a self-yielding function, and the abrasive particles 8 can remove the SiO protruding from the surface of the SiC sheet 52 Layer 7, SiO of the recess2The layer 7 is not in contact with the abrasive grains 8 and remains, and the SiC single crystal matrix is exposed at the projected portion of the surface of the SiC chip 5.
Step four, oxidizing the SiC single crystal matrix exposed from the convex part on the surface of the SiC piece 5 again, removing the oxidized SiC single crystal matrix by the abrasive particles 8, and repeating the step one to the step three until the SiO in the concave part on the surface of the SiC piece 52 Layer 7 is also removed, resulting in a planar surface of SiC sheet 5.
In the process of steps one to four, the shower head 6 continuously sprays deionized water to the polishing pad 2.
According to the invention, the abrasive particles 8 with the self-yielding function are adopted, the processing precision is improved, the abrasive particles 8 can yield up and down along with the change of the polishing pressure, the self-adaptability is realized, when the sizes of the abrasive particles 8 are inconsistent and the heights of the convex edges of the abrasive particles 8 are different, the heights of the convex edges of the abrasive particles 8 in the processing process are changed along with the change of the pressure through the self-yielding performance of the abrasive particles 8, the cutting depth of each abrasive particle 8 in the processing process is controlled to be uniform, the polishing precision is improved, and meanwhile, deionized water is adopted as the polishing liquid, so that the production cost is saved, and the waste discharge is reduced.
The reducing agent in the polishing pad 2 is one or more of the following: sodium peroxide powder, potassium chlorate powder and potassium permanganate powder.
The oxidizing agent in the polishing pad 2 is one or more of the following: FeSO4Powder, CrO3Powder, sodium hydroxide powder.
The catalyst in the polishing pad 2 is one or more of the following: pt powder, MnO2Powder, FeO powder, Fe3O4Powder, iron powder, FeCl3And (3) pulverizing.
The active agent in the polishing pad 2 is activated carbon powder or polyethylene glycol powder or a mixture of the two.
The abrasive particles 8 in the polishing pad 2 are one or more of the following: diamond micropowder, Al2O3Fine powder, fine silica powder, and abrasive grains 8 having a particle diameter of 15nm to 28 μm.
The following further explains the method for polishing a single crystal SiC wafer of the present invention by way of specific examples.
Example one
The following compositions were selected and mixed to produce one polishing pad 2, and the compositions in percentage by weight thereof are shown in tables 1 and 2.
TABLE 1 abrasive layer No. 1 composition of polishing pad 2 (abrasive grain-containing, rough polishing process)
Figure BDA0003189101670000061
Figure BDA0003189101670000071
TABLE 2 base layer No. 1 composition of polishing pad 2 (rough polishing process)
Figure BDA0003189101670000072
First, a base layer having a 1.2mm thickness without abrasive grains and having a yielding function was prepared based on composition No. 1 of polishing pad 2 in table 2, and then a textured layer having abrasive grains and having a yielding function was prepared based on composition No. 1 of polishing pad 2 in table 1, and further on the base layer, in a thickness of 1.3mm, for rough polishing. Using the polishing pad 2 prepared in the above formulation, a 2-inch 6H-SiC single crystal wafer (0001) C-plane and Si-plane was polished on a ZYP300 grinder with a surface roughness Ra of about 40nm before polishing. The polishing pressure is 3psi, the rotating speed of the polishing disc 3 is 40r/min, the rotating speed of the workpiece is 40r/min, the polishing time is 30min, after polishing, the surface roughness of the C surface of the 6H-SiC single wafer (0001) is about 17nm, and the polishing speed reaches 0.18 mu m/min; the surface roughness of the (0001) Si surface of the 6H-SiC single crystal wafer is changed to about 18nm, and the polishing rate reaches 0.2 mu m/min.
Example two
The following compositions were selected and mixed to produce polishing pads 2, each of which was shown in tables 3 and 4 in terms of the weight percentage.
TABLE 3 abrasive layer No. 2 composition of polishing pad 2 (abrasive grain-containing, semi-finish polishing process)
Figure BDA0003189101670000081
Figure BDA0003189101670000091
TABLE 4 base layer No. 2 composition of polishing pad 2 (abrasive-free, semi-finish polishing process)
Figure BDA0003189101670000092
First, a base layer having a conceding function without abrasive grains was prepared in a thickness of 1.2mm based on the composition of base layer No. 2 of polishing pad 2 in table 4, and then a texture layer having a conceding function with abrasive grains was prepared in a thickness of 1.3mm based on the composition of abrasive layer No. 2 of polishing pad 2 in table 3, and was used in the semi-finish polishing process. The fixed abrasive chemical mechanical polishing pad prepared in the above ratio was used to polish 2-inch 6H-SiC single crystal wafers (0001) C-plane and Si-plane on a ZYP300 grinder, and the surface roughness Ra was about 20nm before polishing. The polishing pressure is 3psi, the rotating speed of the polishing disc 3 is 40r/min, the rotating speed of the workpiece is 40r/min, the polishing time is 30min, after polishing, the surface roughness of the C surface of the 6H-SiC single wafer (0001) is about 8nm, and the polishing speed reaches 0.15 mu m/min; the surface roughness of the (0001) Si surface of the 6H-SiC single crystal wafer is about 8nm, and the polishing rate reaches 0.17 mu m/min.
EXAMPLE III
The following compositions were selected and mixed to produce polishing pads 2, each of which was shown in tables 5 and 6 in terms of the weight percentage.
TABLE 5 abrasive layer No. 3 composition of polishing pad 2 (abrasive grain-containing, fine polishing process)
Figure BDA0003189101670000101
Figure BDA0003189101670000111
TABLE 6 base layer No. 3 composition of polishing pad 2 (no abrasive grain, fine polishing process)
Figure BDA0003189101670000112
First, a base layer having a conceding function without abrasive grains was prepared in a thickness of 1.2mm based on the composition of base layer No. 3 of polishing pad 2 in table 6, and then a texture layer having a conceding function with abrasive grains was prepared in a thickness of 1.3mm for finish polishing based on the composition of abrasive layer No. 3 of polishing pad 2 in table 5. The fixed abrasive chemical mechanical polishing pad prepared according to the above formulation was used to polish 2-inch 6H-SiC single crystal wafers (0001) C-plane and Si-plane on a ZYP300 grinder, and the surface roughness Ra was about 8nm before polishing. The polishing pressure is 3psi, the rotating speed of the polishing disk 3 is 40r/min, the rotating speed of the workpiece is 40r/min, the polishing time is 30min, after polishing, the surface roughness of the C surface of the 6H-SiC single wafer (0001) is about 1.2nm, and the polishing speed reaches 0.12 mu m/min; the surface roughness of the (0001) Si surface of the 6H-SiC single crystal wafer is changed to about 1.10nm, and the polishing rate reaches 0.13 mu m/min.
The polishing method of the SiC single crystal wafer has the advantages of high and controllable removal rate, low or no damage of the polished wafer, high flatness and low polishing cost, and can be used for rough polishing, semi-fine polishing and fine polishing in the chemical mechanical polishing of SiC single crystal hard brittle crystal materials and the precise chemical mechanical polishing of other hard brittle crystal materials and optical materials.
The principle and the implementation mode of the invention are explained by applying a specific example, and the description of the embodiment is only used for helping to understand the method and the core idea of the invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the above, the present disclosure should not be construed as limiting the invention.

Claims (6)

1. A polishing method of a SiC single crystal wafer is characterized by comprising the following steps:
the method comprises the following steps that firstly, a polishing pad is arranged at the top of a polishing disc, the polishing head is arranged at the top of the polishing pad, a back film is arranged on one side, facing the polishing disc, of the polishing head, a SiC sheet is located between the back film and the polishing pad, the SiC sheet is in contact with convex peaks on the surface of the polishing pad under the pressure action of the polishing head to form a plurality of micro contact areas, and a reducing agent in the polishing pad generates a solid-phase reduction reaction to release oxygen so as to form oxygen enrichment in the micro contact areas;
step two, under the action of catalyst, oxidant, activator and friction, oxygen reacts withThe surface of the SiC piece is subjected to solid phase oxidation reaction to generate SiO2A layer;
step three, one surface of the polishing pad facing the SiC sheet is provided with abrasive particles, the abrasive particles have a self-conceding function, and the abrasive particles can remove the protruded SiO on the surface of the SiC sheet2SiO of layer, recess2The layer can not be contacted with the abrasive particles and is reserved, and the protruding part on the surface of the SiC piece is exposed out of the SiC single crystal matrix;
fourthly, oxidizing the SiC single crystal matrix exposed from the convex part on the surface of the SiC piece again, removing the oxidized SiC single crystal matrix by abrasive particles, and repeating the first step to the third step until SiO in the concave part on the surface of the SiC piece2The layer is also removed, and the surface of the SiC piece is flattened;
and in the process of the first step to the fourth step, the spray head continuously sprays deionized water to the polishing pad.
2. The method of polishing a SiC single wafer according to claim 1, characterized in that the reducing agent in the polishing pad is one or more of the following substances: sodium peroxide powder, potassium chlorate powder and potassium permanganate powder.
3. The method of polishing a SiC single wafer according to claim 1, characterized in that the oxidizing agent in the polishing pad is one or more of the following: FeSO4Powder, CrO3Powder, sodium hydroxide powder.
4. The SiC single wafer polishing method according to claim 1, wherein the catalyst in the polishing pad is one or more of the following substances: pt powder, MnO2Powder, FeO powder, Fe3O4Powder, iron powder, FeCl3And (3) pulverizing.
5. The method of polishing a SiC single wafer according to claim 1, characterized in that the active agent in the polishing pad is activated carbon powder or polyethylene glycol powder or a mixture of both.
6. The method of polishing a SiC single crystal wafer as claimed in claim 1, wherein the polishing is carried out by using a polishing solution containing a silicon compound and a silicon compoundThe abrasive particles in the polishing pad are one or more of the following substances: diamond micropowder, Al2O3Fine powder and silica fine powder, wherein the grain diameter of the abrasive grains is 15 nm-28 mu m.
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