CN113517367A - Construction method of high-sensitivity position detector based on Ag nano-particle/ZnO structure and product thereof - Google Patents
Construction method of high-sensitivity position detector based on Ag nano-particle/ZnO structure and product thereof Download PDFInfo
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Abstract
The invention relates to a construction method of a high-sensitivity position detector based on an Ag nano-particle/ZnO structure and a product thereof, which fully utilize the advantage of improving the performance of a light-pickup material by plasmon absorption of a metal nano-structure, adopt different methods to construct a selective absorption interface in a ZnO film/silicon heterojunction by using an Ag nano-particle material, and simultaneously accurately control the thickness of ZnO by atomic layer deposition to form a composite heterojunction for optimizing the excitation and transportation processes of carriers so as to improve the position sensitivity of a lateral photovoltaic effect. The position sensitivity of the position detector device constructed by the method reaches 130.93 mV/mm under the irradiation of near infrared light with the wavelength of 1064 nm. In addition, the device also shows good response stability. The construction method of the high-sensitivity position detector based on the Ag nano-particle/ZnO structure is simple and controllable, has high repeatability and has obvious application value.
Description
Technical Field
The invention belongs to the field of photoelectric detectors, and particularly relates to a construction method of a high-sensitivity position detector based on an Ag nano particle/ZnO structure and a product thereof.
Background
With the development of the information age, various sensing devices occupy more and more important positions in the internet of things and artificial intelligence, and the multifunctional integration of the sensing devices becomes the research focus in various fields. The photoelectric sensor can convert optical signals into electric signals, and has wide application in the fields of biomedical imaging, optical communication, environmental monitoring, military, safety inspection, night vision, scientific research, industrial process control and the like. Different from the longitudinal photovoltaic response of light caused by the irradiation of a surface light source, when various semiconductor heterojunctions or metal semiconductor junctions are irradiated by non-uniform light, surface voltage is generated on the surface of the heterogeneous junctions or the metal semiconductor junctions, the surface voltage value changes along with the change of the irradiation position of the non-uniform light source, and the characteristic that the surface voltage value changes along with the change of the non-uniform irradiation position is called as the lateral photovoltaic effect. According to the characteristic that the output value of the lateral photovoltaic effect surface voltage is related to the irradiation position of the light source, the method can be used for sensitive detection of photoelectric positions. The photoelectric sensor taking the structure as the response mechanism has the advantages of simple structure, high position resolution, high response speed, stable signal output, strong anti-interference capability, capability of monitoring light intensity and the like, is suitable for quickly measuring angles, positions, distances or other physical quantities which can be converted into light spot positions, and has wide application value in the fields of industrial detection, monitoring, accurate positioning, automatic focusing, robot sensing, aerospace and the like. Therefore, research on the heterostructure with high position sensitivity lateral photovoltaic effect is focused by research and industrial industries.
In the traditional research, the position sensitivity of the lateral photovoltaic effect is improved mainly by selecting composite materials with different photoelectric properties. Among them, an oxide semiconductor typified by zinc oxide has been widely studied in recent years because it can effectively maintain the stability of performance of a device in various environments. However, the lateral photovoltaic performance of the zinc oxide-based semiconductor/silicon-based heterojunction surface is greatly improved, and meanwhile, more problems begin to be faced. As an active layer material that absorbs photons and generates carriers, the absorption of silicon-based covers a broad spectral range from ultraviolet to near-infrared. However, due to the low photon excitation energy and the weak light absorption characteristic in the near infrared band, the lateral photovoltaic response band of the zinc oxide-based film/silicon-based heterojunction surface is mainly concentrated in the ultraviolet-visible range (below 800nm wavelength). In addition, the higher carrier recombination efficiency and the lower light absorption selectivity in the silicon substrate greatly influence the further application of the silicon substrate in the photoelectric position detector. In previous researches, a single heterojunction is mostly used as a main system, the photoelectric property of the material is regulated and controlled in modes of doping modification and the like, the generation density and relaxation time of a photon-generated carrier are improved, so that the lateral position sensitivity is improved, and the attention on the construction of a novel interface for regulating and controlling the light absorption property is less.
Based on the reasons, the selective absorption interface is constructed by selecting a proper metal nano structure, the photoelectric property of the oxide material is regulated and controlled, and the method has important scientific significance and engineering application significance on optimizing the property of the photoelectric position sensitive detection device.
Disclosure of Invention
The invention aims to provide a construction method of a high-sensitivity position detector based on an Ag nano-particle/ZnO structure, which fully utilizes the advantage of the plasmon absorption of a metal nano-structure to improve the performance of a light-pickup material, adopts different methods, constructs a selective absorption interface in a ZnO film/silicon heterojunction by using an Ag nano-particle material, and simultaneously accurately controls the thickness of ZnO through atomic layer deposition to form a composite heterojunction, so that the composite heterojunction is used for optimizing the excitation and transportation processes of carriers to improve the position sensitivity of a lateral photovoltaic effect. The position sensitivity of the device reaches 130.93 mV/mm under the irradiation of near infrared light with the wavelength of 1064 nm. In addition, the device also shows good response stability. The device construction method is simple and controllable, has high repeatability, and has obvious application value.
Yet another object of the present invention is to: the high-sensitivity position detector product based on the Ag nano-particle/ZnO structure prepared by the method is provided.
The purpose of the invention is realized by the following scheme: a construction method of a high-sensitivity position detector based on an Ag nano particle/ZnO structure comprises the following steps:
1) preparing a ZnO film:
growing ZnO film with silicon substrate by Atomic Layer Deposition (ALD), diethyl zinc (DMZ) and deionized water (H)2O) serving as a reaction precursor, continuously blowing high-purity nitrogen into a reaction chamber at a flow rate of 120-200 sccm, and setting the reaction temperature to be 200 ℃; each ALD cycle includes four processes: firstly, introducing gas-phase diethyl zinc (DMZ) for 0.1-0.3 s, and carrying out chemical adsorption on a substrate; then nitrogen purging is carried out for 3-10 s, and the residual reactant after the reaction is purged; then introducing water vapor for 1-2 s, and reacting with diethyl zinc on the surface of the substrate to generate ZnO; finally, waiting for nitrogen purging for 5-10 s, removing residual reactants and byproducts of the chemical reaction, and controlling the cycle number to be 30-200 to obtain the appropriate thickness of the ZnO film;
2) modification of Ag nanoparticles:
depositing by using a magnetron sputtering system and a silver target material with the purity of 99.99 percent, wherein the deposition conditions are as follows: background air pressure of 6 x 10-4Pa, the deposition gas is argon, the working pressure in the deposition process is 0.8Pa, and the power of a direct-current power supply is 20W; calibrating by a step profiler, controlling the sputtering rate under the condition to be 0.15nm/s, and controlling the thickness of the Ag film, namely the size of Ag particles, by depositing for 80-120 s to obtain an Ag nano particle/ZnO/Si sample;
3) construction of position detector device:
and preparing electrodes on the surfaces of the obtained Ag nano particles/ZnO/Si samples by pressing and welding indium electrodes, coating conductive silver adhesive, photoetching Au electrodes and the like, and finishing the construction of the device.
Further, the commercial silicon substrate is sequentially subjected to ultrasonic cleaning by using alcohol, acetone, alcohol and deionized water for 15-30 minutes respectively, dust and grease on the surface are removed, and the substrate is dried at the temperature of 60-80 ℃ in vacuum after cleaning to obtain the required substrate for later use. The best combination is washing for 20 minutes, and the vacuum drying temperature after washing is set to 60 ℃.
Preferably, in the step 1), the reaction chamber is continuously purged by high-purity nitrogen at a flow rate of 120-200 sccm, and the reaction temperature is set to 200 ℃. The most preferred composition is 150sccm, 200 ℃.
Preferably, in the step 1), the cycle of the ALD reaction is designed to firstly introduce gas-phase diethyl zinc (DMZ) for 0.1-0.3 s, then purge nitrogen for 3-10 s, then introduce water vapor for 1-2 s, finally wait for purge nitrogen for 5-10 s, and obtain a suitable thickness of the ZnO film by controlling the cycle number to be 30-200, wherein the optimal combination is that the gas-phase diethyl zinc (DMZ) is introduced for 0.1s, then purge nitrogen for 5s, then introduce water vapor for 1s, and finally wait for purge nitrogen for 5 s. By controlling the number of cycles 50.
Preferably, the deposition time in step 2) is 80-120 s at a sputtering rate of 0.15nm/s, so as to control the thickness (particle size) of the Ag film, and the optimal time is 100 s.
And 3) selecting indium, silver and gold as electrode materials, and performing pressure welding on the indium electrode with the best effect.
The invention provides a high-sensitivity position detector based on an Ag nano particle/ZnO structure, which is prepared according to any one of the methods.
Compared with the prior art, the invention has the beneficial effects that:
the invention provides a construction method of a high-sensitivity position detector based on an Ag nano-particle/ZnO structure and a product thereof, which fully utilize the advantage of the plasmon absorption and the improvement of the performance of a light-pickup material of a metal nano-structure, adopt different methods, construct a selective absorption interface in a ZnO film/silicon heterojunction by using an Ag nano-particle material, and simultaneously accurately control the thickness of ZnO through atomic layer deposition to form a composite heterojunction, so as to optimize the excitation and transportation processes of carriers and improve the position sensitivity of a lateral photovoltaic effect. In addition, the device also shows good response stability. The device construction method is simple and controllable, has high repeatability, and has obvious application value.
Drawings
FIG. 1: example device 1 lateral photovoltaic response curves (light source wavelength: 1064 nm) under different treatments.
Detailed Description
The following examples are given for the detailed implementation and specific operation of the present invention, but the scope of the present invention is not limited to the following examples.
Example 1:
a high-sensitivity position detector based on an Ag nano particle/ZnO structure is constructed according to the following steps:
1) firstly, ultrasonically cleaning a commercial silicon substrate by using alcohol, acetone, alcohol and deionized water in sequence for 20 minutes respectively, removing dust and grease on the surface, and drying at 60 ℃ in vacuum after cleaning to obtain a required substrate for later use;
2) preparing a ZnO film:
with diethyl zinc (DMZ) and deionized water (H)2O) is taken as a reaction precursor, high-purity nitrogen is continuously blown to the reaction chamber at the flow rate of 150sccm, and the reaction temperature is set to be 200 ℃; each ALD cycle includes four processes: firstly, introducing gas-phase diethyl zinc (DMZ) for 0.1s, and carrying out chemical adsorption on a substrate; then purging for 5s by nitrogen, and purging the residual reactant after the reaction; then introducing water vapor for 1s, and reacting with diethyl zinc on the surface of the substrate to generate ZnO; finally, waiting for nitrogen purging for 5s, removing residual reactants and byproducts of the chemical reaction, and setting the control cycle number to be 50 to obtain the appropriate thickness of the ZnO film;
3) modification of Ag nanoparticles:
depositing by using a magnetron sputtering system and a silver target material with the purity of 99.99 percent, wherein the deposition conditions are as follows: background air pressure of 6 x 10-4Pa, the deposition gas is argon, the working pressure in the deposition process is 0.8Pa, and the power of a direct-current power supply is 20W; sputtering rate is 0.15nm/s, deposition time is controlled to be 100s, and Ag nano particles/ZnO/Si samples are obtained;
4) construction of position detector device:
and (5) pressing and welding an indium electrode on the surface of the sample, and finishing the construction of the device.
The figure shows the lateral photovoltaic response curve (light source wavelength: 1064 nm) of the example device 1 under different treatments.
Example 2:
a high-sensitivity position detector based on an Ag nano particle/ZnO structure is similar to the step of the embodiment 1, and is constructed by the following steps:
1) firstly, ultrasonically cleaning a commercial silicon substrate by using alcohol, acetone, alcohol and deionized water in sequence for 15 minutes respectively, removing dust and grease on the surface, and drying at 60 ℃ in vacuum after cleaning to obtain a required substrate for later use;
2) preparing a ZnO film:
with diethyl zinc (DMZ) and deionized water (H)2O) is taken as a reaction precursor, high-purity nitrogen is continuously blown to the reaction chamber at the flow rate of 120 sccm, and the reaction temperature is set to be 200 ℃; each ALD cycle includes four processes: firstly, introducing gas-phase diethyl zinc (DMZ) for 0.2s, and carrying out chemical adsorption on a substrate; then, nitrogen purging is carried out for 3s, and the residual reactant after the reaction is purged; then introducing water vapor for 1.5s, and reacting with diethyl zinc on the surface of the substrate to generate ZnO; finally, waiting for nitrogen purging for 8s, and removing residual reactants and byproducts of the chemical reaction; setting the control cycle number to be 30 to obtain the appropriate thickness of the ZnO film; then, the process of the present invention is carried out,
3) modification of Ag nanoparticles:
depositing by using a magnetron sputtering system by using a silver target material with the purity of 99.99 percent; the deposition conditions were: background air pressure of 6 x 10-4Pa, the deposition gas is argon, the working pressure in the deposition process is 0.8Pa, and the power of a direct-current power supply is 20W; controlling the deposition time to be 120s to obtain a sample; finally, the process is carried out in a batch,
4) construction of position detector device:
and (5) manufacturing an electrode on the surface of the sample by a method of coating conductive silver adhesive, and finishing the construction of the device.
Example 3:
a high-sensitivity position detector based on an Ag nano particle/ZnO structure is similar to the step of the embodiment 1, and is constructed by the following steps:
1) firstly, ultrasonically cleaning a commercial silicon substrate by using alcohol, acetone, alcohol and deionized water in sequence for 30 minutes respectively, removing dust and grease on the surface, and drying the cleaned silicon substrate at 80 ℃ in vacuum to obtain a required substrate for later use;
2) Preparing a ZnO film:
with diethyl zinc (DMZ) and deionized water (H)2O) is taken as a reaction precursor, high-purity nitrogen is continuously blown to the reaction chamber at the flow rate of 200 sccm, and the reaction temperature is set to be 200 ℃; each ALD cycle includes four processes: firstly, introducing gas-phase diethyl zinc (DMZ) for 0.3s, and carrying out chemical adsorption on a substrate; then, nitrogen purging is carried out for 10s, and the residual reactant after the reaction is purged; then introducing water vapor for 2s, and reacting with diethyl zinc on the surface of the substrate to generate ZnO; finally, waiting for nitrogen purging for 10s, and removing residual reactants and byproducts of the chemical reaction; setting the control cycle number to be 200 to obtain the appropriate thickness of the ZnO film; then, the process of the present invention is carried out,
3) modification of Ag nanoparticles:
depositing by using a magnetron sputtering system by using a silver target material with the purity of 99.99 percent; the deposition conditions were: background air pressure of 6 x 10-4Pa, the deposition gas is argon, the working pressure in the deposition process is 0.8Pa, and the power of a direct-current power supply is 20W; controlling the deposition time to be 80s to obtain a sample; finally, the process is carried out in a batch,
4) construction of position detector device:
and (5) pressing and welding an indium electrode on the surface of the sample, and finishing the construction of the device. And finally, manufacturing an electrode on the surface of the sample by a method of photoetching an Au electrode, and finishing the construction of the device.
Claims (10)
1. A construction method of a high-sensitivity position detector based on an Ag nano particle/ZnO structure is characterized by comprising the following steps:
1) preparing a ZnO film:
growing ZnO film with silicon substrate by Atomic Layer Deposition (ALD), diethyl zinc (DMZ) and deionized water (H)2O) serving as a reaction precursor, continuously blowing high-purity nitrogen into a reaction chamber at a flow rate of 120-200 sccm, and setting the reaction temperature to be 200 ℃; each ALD cycle includes four processes: firstly, the methodIntroducing gas-phase diethyl zinc (DMZ) for 0.1-0.3 s, and performing chemical adsorption on the substrate; then nitrogen purging is carried out for 3-10 s, and the residual reactant after the reaction is purged; then introducing water vapor for 1-2 s, and reacting with diethyl zinc on the surface of the substrate to generate ZnO; finally, waiting for nitrogen purging for 5-10 s, removing residual reactants and byproducts of the chemical reaction, and controlling the cycle number to be 30-200 to obtain the appropriate thickness of the ZnO film;
2) modification of Ag nanoparticles:
depositing by using a magnetron sputtering system and a silver target material with the purity of 99.99 percent, wherein the deposition conditions are as follows: background air pressure of 6 x 10-4Pa, the deposition gas is argon, the working pressure in the deposition process is 0.8Pa, and the power of a direct-current power supply is 20W; calibrating by a step profiler, controlling the sputtering rate under the condition to be 0.15nm/s, and controlling the thickness of the Ag film, namely the size of Ag particles, by depositing for 80-120 s to obtain an Ag nano particle/ZnO/Si sample;
3) construction of position detector device:
and (3) preparing an electrode on the surface of the obtained Ag nano particle/ZnO/Si sample by pressure welding an indium electrode and coating conductive silver adhesive or photoetching an Au electrode, and finishing the construction of the device.
2. The method of claim 1, wherein the silicon substrate is a commercial silicon substrate, and the silicon substrate is pretreated by: and sequentially using alcohol, acetone, alcohol and deionized water for ultrasonic cleaning for 15-30 minutes respectively, removing dust and grease on the surface, and drying at 60-80 ℃ in vacuum for later use after cleaning.
3. The method according to claim 1, wherein in the step 1), the reaction chamber is continuously purged with high purity nitrogen gas at a flow rate of 150sccm, and the reaction temperature is set to 200 ℃.
4. The method according to claim 1, wherein in step 1), the cycle of the ALD reaction is designed to: firstly, introducing diethyl zinc (DMZ) in a gas phase for 0.1s, then purging with nitrogen for 5s, then introducing water vapor for 1s, and finally waiting for purging with nitrogen for 5s, and controlling the cycle number to be 50 to obtain the proper ZnO film thickness.
5. The method according to claim 1, wherein in step 2), the deposition time is 100s at a sputtering rate of 0.15 nm/s.
6. The method according to claim 1, wherein the step 3) is performed by using a pressure welding indium electrode.
7. The method of any one of claims 1 to 5, wherein the method is constructed by the steps of:
1) firstly, ultrasonically cleaning a commercial silicon substrate by using alcohol, acetone, alcohol and deionized water in sequence for 20 minutes respectively, removing dust and grease on the surface, and drying at 60 ℃ in vacuum after cleaning to obtain a required substrate for later use;
2) preparing a ZnO film:
with diethyl zinc (DMZ) and deionized water (H)2O) is taken as a reaction precursor, high-purity nitrogen is continuously blown to the reaction chamber at the flow rate of 150sccm, and the reaction temperature is set to be 200 ℃; each ALD cycle includes four processes: firstly, introducing gas-phase diethyl zinc (DMZ) for 0.1s, and carrying out chemical adsorption on a substrate; then purging for 5s by nitrogen, and purging the residual reactant after the reaction; then introducing water vapor for 1s, and reacting with diethyl zinc on the surface of the substrate to generate ZnO; finally, waiting for nitrogen purging for 5s, removing residual reactants and byproducts of the chemical reaction, and setting the control cycle number to be 50 to obtain the appropriate thickness of the ZnO film;
3) modification of Ag nanoparticles:
depositing by using a magnetron sputtering system and a silver target material with the purity of 99.99 percent, wherein the deposition conditions are as follows: background air pressure of 6 x 10-4Pa, the deposition gas is argon, the working pressure in the deposition process is 0.8Pa, and the power of a direct-current power supply is 20W; sputtering rate is 0.15nm/s, deposition time is controlled to be 100s, and Ag nano particles/ZnO/Si samples are obtained;
4) construction of position detector device:
and (5) pressing and welding an indium electrode on the surface of the sample, and finishing the construction of the device.
8. The method of claims 1 to 5, wherein the method is constructed by the steps of:
the method comprises the following steps:
1) firstly, ultrasonically cleaning a commercial silicon substrate by using alcohol, acetone, alcohol and deionized water in sequence for 15 minutes respectively, removing dust and grease on the surface, and drying at 60 ℃ in vacuum after cleaning to obtain a required substrate for later use;
2) preparing a ZnO film:
with diethyl zinc (DMZ) and deionized water (H)2O) is taken as a reaction precursor, high-purity nitrogen is continuously blown to the reaction chamber at the flow rate of 120 sccm, and the reaction temperature is set to be 200 ℃; each ALD cycle includes four processes: firstly, introducing gas-phase diethyl zinc (DMZ) for 0.2s, and carrying out chemical adsorption on a substrate; then, nitrogen purging is carried out for 3s, and the residual reactant after the reaction is purged; then introducing water vapor for 1.5s, and reacting with diethyl zinc on the surface of the substrate to generate ZnO; finally, waiting for nitrogen purging for 8s, and removing residual reactants and byproducts of the chemical reaction; setting the control cycle number to be 30 to obtain the appropriate thickness of the ZnO film; then, the process of the present invention is carried out,
3) modification of Ag nanoparticles:
depositing by using a magnetron sputtering system by using a silver target material with the purity of 99.99 percent; the deposition conditions were: background air pressure of 6 x 10-4Pa, the deposition gas is argon, the working pressure in the deposition process is 0.8Pa, and the power of a direct-current power supply is 20W; controlling the deposition time to be 120s to obtain a sample; finally, the process is carried out in a batch,
4) construction of position detector device:
and (5) manufacturing an electrode on the surface of the sample by a method of coating conductive silver adhesive, and finishing the construction of the device.
9. The method of claims 1 to 6, wherein the method is constructed by the steps of: the method comprises the following steps:
1) firstly, ultrasonically cleaning a commercial silicon substrate by using alcohol, acetone, alcohol and deionized water in sequence for 30 minutes respectively, removing dust and grease on the surface, and drying the cleaned silicon substrate at 80 ℃ in vacuum to obtain a required substrate for later use;
2) Preparing a ZnO film:
with diethyl zinc (DMZ) and deionized water (H)2O) is taken as a reaction precursor, high-purity nitrogen is continuously blown to the reaction chamber at the flow rate of 200 sccm, and the reaction temperature is set to be 200 ℃; each ALD cycle includes four processes: firstly, introducing gas-phase diethyl zinc (DMZ) for 0.3s, and carrying out chemical adsorption on a substrate; then, nitrogen purging is carried out for 10s, and the residual reactant after the reaction is purged; then introducing water vapor for 2s, and reacting with diethyl zinc on the surface of the substrate to generate ZnO; finally, waiting for nitrogen purging for 10s, and removing residual reactants and byproducts of the chemical reaction; setting the control cycle number to be 200 to obtain the appropriate thickness of the ZnO film; then, the process of the present invention is carried out,
3) modification of Ag nanoparticles:
depositing by using a magnetron sputtering system by using a silver target material with the purity of 99.99 percent; the deposition conditions were: background air pressure of 6 x 10-4Pa, the deposition gas is argon, the working pressure in the deposition process is 0.8Pa, and the power of a direct-current power supply is 20W; controlling the deposition time to be 80s to obtain a sample; finally, the process is carried out in a batch,
4) construction of position detector device:
and (5) pressing and welding an indium electrode on the surface of the sample, and finishing the construction of the device. And finally, manufacturing an electrode on the surface of the sample by a method of photoetching an Au electrode, and finishing the construction of the device.
10. A highly sensitive position detector based on Ag nanoparticles/ZnO structures, characterized in that it is prepared according to any one of claims 1 to 9.
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101363741A (en) * | 2008-09-27 | 2009-02-11 | 中国石油大学(北京) | Wide band light position detector |
| CN103266308A (en) * | 2013-05-08 | 2013-08-28 | 上海纳米技术及应用国家工程研究中心有限公司 | Zinc oxide based photoelectric position sensing material and preparation method thereof |
| CN103346171A (en) * | 2013-05-31 | 2013-10-09 | 西安交通大学 | Responsivity-enhanced ZnO-based photoconductive detector and preparation method thereof |
| CN103441191A (en) * | 2013-08-21 | 2013-12-11 | 华北电力大学 | Manufacturing method for Ag/Al core shell composite nanometer particle light trapping structure of thin film solar cell |
| CN105355715A (en) * | 2015-11-17 | 2016-02-24 | 上海纳米技术及应用国家工程研究中心有限公司 | Preparation method of metal nanocrystalline modified semiconductor photoelectric position sensing device |
| CN106024926A (en) * | 2016-07-15 | 2016-10-12 | 哈尔滨工业大学 | Near-ultraviolet photoelectric position-sensitive detector with quick photoelectric recovery response and preparation method thereof |
| CN109473487A (en) * | 2018-12-25 | 2019-03-15 | 嘉兴尚能光伏材料科技有限公司 | Crystal-silicon solar cell and preparation method thereof based on compound light trapping structure |
| CN109768114A (en) * | 2018-12-04 | 2019-05-17 | 东南大学 | It is a kind of based on graphene-heterojunction semiconductor position sensitive photodetector |
-
2021
- 2021-07-09 CN CN202110777673.8A patent/CN113517367A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101363741A (en) * | 2008-09-27 | 2009-02-11 | 中国石油大学(北京) | Wide band light position detector |
| CN103266308A (en) * | 2013-05-08 | 2013-08-28 | 上海纳米技术及应用国家工程研究中心有限公司 | Zinc oxide based photoelectric position sensing material and preparation method thereof |
| CN103346171A (en) * | 2013-05-31 | 2013-10-09 | 西安交通大学 | Responsivity-enhanced ZnO-based photoconductive detector and preparation method thereof |
| CN103441191A (en) * | 2013-08-21 | 2013-12-11 | 华北电力大学 | Manufacturing method for Ag/Al core shell composite nanometer particle light trapping structure of thin film solar cell |
| CN105355715A (en) * | 2015-11-17 | 2016-02-24 | 上海纳米技术及应用国家工程研究中心有限公司 | Preparation method of metal nanocrystalline modified semiconductor photoelectric position sensing device |
| CN106024926A (en) * | 2016-07-15 | 2016-10-12 | 哈尔滨工业大学 | Near-ultraviolet photoelectric position-sensitive detector with quick photoelectric recovery response and preparation method thereof |
| CN109768114A (en) * | 2018-12-04 | 2019-05-17 | 东南大学 | It is a kind of based on graphene-heterojunction semiconductor position sensitive photodetector |
| CN109473487A (en) * | 2018-12-25 | 2019-03-15 | 嘉兴尚能光伏材料科技有限公司 | Crystal-silicon solar cell and preparation method thereof based on compound light trapping structure |
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