CN113504708A - Light source attenuation monitoring method and device, light source life measuring method and device - Google Patents
Light source attenuation monitoring method and device, light source life measuring method and device Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 43
- 238000012544 monitoring process Methods 0.000 title claims abstract description 28
- 235000012431 wafers Nutrition 0.000 claims abstract description 145
- 238000002360 preparation method Methods 0.000 claims abstract description 35
- 230000005855 radiation Effects 0.000 claims abstract description 28
- 230000003287 optical effect Effects 0.000 claims description 13
- 230000015556 catabolic process Effects 0.000 claims 1
- 238000006731 degradation reaction Methods 0.000 claims 1
- 238000012360 testing method Methods 0.000 abstract description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 10
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 4
- 229910052753 mercury Inorganic materials 0.000 description 4
- 238000001459 lithography Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 1
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- 238000001259 photo etching Methods 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
Abstract
The application relates to the technical field of semiconductor integrated circuit manufacturing, in particular to a method and a device for monitoring light source attenuation and a method and a device for measuring the service life of a light source. The monitoring method comprises the following steps: acquiring n preparation wafer groups, wherein each preparation wafer group comprises m wafers, and n and m are positive integers greater than 1; exposing the n prepared wafer groups sequentially by using a detected light source with first light radiation energy, and determining the time of exposing each prepared wafer group as a using time point; acquiring exposure time of each prepared wafer in each prepared wafer group in average exposure; a correspondence between a variable of the exposure time period of the preparation sheet composed of the exposure time periods of the respective preparation sheets and the usage time composed of the respective usage time points is determined. The method can solve the problems that the method for regularly testing the light irradiance of the light source in the related technology to determine the attenuation of the light source wastes time and labor and is not beneficial to the capacity of a machine table.
Description
Technical Field
The application relates to the technical field of semiconductor integrated circuit manufacturing, in particular to a method and a device for monitoring light source attenuation of an exposure device of a photoetching machine and a method and a device for measuring the service life of a light source.
Background
In a semiconductor chip manufacturing process, photolithography is an indispensable link, and a photolithography technique is a precise microfabrication technique. At present, most of lithography machines based on ultraviolet light sources use a high-pressure mercury lamp as an exposure light source, and as the use time point of the mercury lamp increases, the energy of output light of the mercury lamp gradually decreases, that is, the light intensity decreases, so that the deviation of Critical Dimension (CD) of a pattern formed by lithography gradually increases, and the lithography precision is affected.
In the related art, engineers are usually required to test the light irradiance of the light source of the exposure apparatus at regular intervals to monitor the uniformity and intensity of the light source, and when the light irradiance is tested to be lower than a predetermined threshold, it is determined that the light source is attenuated to a level that requires replacement.
However, the method of testing the light irradiance of the light source at regular time to determine the attenuation of the light source is time-consuming and labor-consuming, which is not favorable for the productivity of the machine.
Disclosure of Invention
The application provides a light source attenuation monitoring method and device and a light source service life measuring method and device, which can solve the problems that the method for determining the light source attenuation by regularly testing the light irradiance of a light source in the related technology wastes time and labor and is not beneficial to the capacity of a machine.
In a first aspect of the present application, a method for monitoring light source attenuation of an exposure apparatus is provided, where the method includes:
acquiring n preparation wafer groups, wherein each preparation wafer group comprises m wafers, and n and m are positive integers greater than 1;
exposing the n preparation wafer groups sequentially according to a sequence by using a detected light source with first light radiation energy, and determining the time for exposing each preparation wafer group as a use time point;
acquiring exposure time of each prepared wafer in each prepared wafer group in average exposure;
and determining the corresponding relation between the exposure time variable of the preparation film consisting of the exposure time of each preparation film and the use time consisting of each use time point.
Optionally, the step of obtaining a preparatory sheet exposure time period for average exposure of each wafer in each preparatory wafer group includes:
acquiring a preparatory group exposure time length for carrying out the exposure operation on each preparatory wafer group;
based on the preparatory group exposure time periods, preparatory sheet exposure time periods for average exposure of each wafer in the respective preparatory wafer groups are determined.
Optionally, in the step of sequentially performing exposure operations on the n preliminary wafer groups in a sequential order by using the detected light source with the first optical radiation energy, and determining a time point at which the exposure operation is performed on each preliminary wafer group as the use time point, the detected light source performs the exposure operation on each wafer in the n preliminary wafer groups with the same first optical radiation energy.
Optionally, the correspondence is used to reflect an attenuation change of the detected light source.
In a second aspect of the present application, there is provided an exposure apparatus light source attenuation monitoring apparatus configured to perform the exposure apparatus light source attenuation monitoring method according to the first aspect of the present application.
In a third aspect of the present application, there is provided an exposure apparatus light source life measuring method including the steps of:
acquiring the corresponding relation between the exposure time variable and the service time of the prepared film of the detected light source according to the first aspect of the application;
determining a film exposure duration threshold according to the corresponding relation, wherein the film exposure duration threshold is used for judging whether the detected light source is up to the life;
performing an exposure operation on a target wafer set at the first optical radiation energy using the measured light source;
acquiring the exposure time of a target wafer of each wafer in the target wafers which are exposed averagely;
judging whether the exposure time of the target film reaches the exposure time threshold value of the film;
and when the target film exposure time reaches the film exposure time threshold, determining that the detected light source needs to be replaced when the detected light source is up to the service life.
Optionally, the step of obtaining the target wafer exposure time for averagely exposing each of the target wafers includes:
acquiring a target group exposure time length for the exposure operation of the target wafer group;
based on the target set of exposure durations, a target sheet exposure duration for average exposure of each of the target wafers is determined.
Optionally, the target wafer group includes at least one wafer.
In a fourth aspect of the present application, there is provided an exposure apparatus light source life measuring apparatus configured to execute the exposure apparatus light source life measuring method according to the third aspect of the present application.
The technical scheme at least comprises the following advantages: the attenuation change of the light source can be determined by monitoring the wafer exposure time of the light source of the exposure device to one wafer to monitor the change of the radiation intensity of the light source, and the light source reaching the wafer exposure time threshold value during exposure is determined to be in service life and needs to be replaced in time by setting the wafer exposure time threshold value.
Drawings
In order to more clearly illustrate the detailed description of the present application or the technical solutions in the prior art, the drawings needed to be used in the detailed description of the present application or the prior art description will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a flow chart illustrating a method for monitoring light source attenuation of an exposure apparatus according to an embodiment of the present disclosure;
FIG. 2a is a schematic diagram of a preparatory chipset in the present embodiment;
FIG. 2b is a schematic diagram showing the exposure operation of the n preparatory wafer groups in sequence by the measured light source;
FIG. 2c is a schematic diagram showing the correspondence relationship between each prepared wafer group Lot and each use time point T;
fig. 2d is a diagram showing the corresponding relationship between the preparatory group exposure time Dur experienced by each preparatory wafer group Lot at each use time point T;
fig. 2e shows the correspondence relationship between the preparatory-sheet exposure time length Dur-W experienced by the average exposure of each wafer in each preparatory wafer group Lot and the preparatory wafer group Lot;
FIG. 3 is a flowchart illustrating a method for determining a lifetime of a light source of an exposure apparatus according to an embodiment of the present disclosure;
FIG. 4 is a diagram showing the relationship between the exposure time variable of the preparation sheet and the usage time
Detailed Description
The technical solutions in the present application will be described clearly and completely with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; the connection can be mechanical connection or electrical connection; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be communicated with each other inside the two elements, or may be wirelessly connected or wired connected. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
In addition, the technical features mentioned in the different embodiments of the present application described below may be combined with each other as long as they do not conflict with each other.
Fig. 1 shows a flowchart of a method for monitoring light source attenuation of an exposure apparatus according to an embodiment of the present application, and as can be seen from fig. 1, the method for monitoring light source attenuation of an exposure apparatus includes the following steps that are performed in sequence:
step S11: acquiring n preparation wafer groups, wherein each preparation wafer group comprises m wafers, and n and m are positive integers greater than 1.
The n preparation wafer groups are used for detecting the attenuation change process of the radiation intensity of the detected light source along with the increase of the use time in the subsequent process.
FIG. 2a is a schematic diagram of the preliminary wafer set in the present embodiment, and as can be seen from FIG. 2a, the present embodiment includes a plurality of preliminary wafer sets Lot [1: n ] such as a first preliminary wafer set Lot [1], a second preliminary wafer set Lot [2], and an nth preliminary wafer set Lot [ n ], each preliminary wafer set Lot includes a plurality of wafers W [1: m ], for example, the nth preliminary wafer set Lot [ n ] includes a plurality of wafers W [1: m ] such as a first wafer W [1], a second wafer W [2], and an mth wafer W [ m ].
Step S12: and sequentially carrying out exposure operation on the n preparation wafer groups according to the sequence by using the detected light source with the first light radiation energy, and determining the time for carrying out the exposure operation on each preparation wafer group as a use time point.
Fig. 2b shows a schematic diagram of the exposure operation of the n preliminary wafer groups in sequence by the light source to be tested, and as can be seen from fig. 2b, the exposure operation of the light source to be tested 200 is performed on the plurality of preliminary wafer groups Lot [1: n ] in sequence.
FIG. 2c is a schematic diagram showing the correspondence relationship between each spare wafer group Lot and each use time point T, and it can be seen from FIG. 2c that the time when the exposure operation is performed on the plurality of spare wafer groups Lot [1: n ] is the use time point T [1: n ], that is, the exposure operation is performed on the first spare wafer group Lot [1] at the first use time point T [1], and the exposure operation … is performed on the second spare wafer group Lot [2] at the second use time point T [2] and the exposure operation is performed on the nth spare wafer group Lot [ n ] at the nth use time point T [ n ]. In the using time points T [1: n ], the using time of the detected light source is gradually increased from the first using time point T [1] to the nth using time point T [ n ].
The measured light source 200 has the same light radiation energy when exposing each wafer in each prepared wafer group Lot, and all the light radiation energy is the first light radiation energy.
It should be explained that the light radiation intensity of the light source to be measured gradually attenuates as the usage time of the light source to be measured increases. After the attenuation occurs, if the measured light source still exposes the wafer with the first optical radiation energy, the wafer exposure time for the wafer needs to be increased. That is, the intensity of the light radiation for exposing the wafer is inversely proportional to the exposure time period under the premise that the energy of the light radiation is not changed.
Step S13: a preparatory-group exposure time period during which the exposure operation is performed on each preparatory wafer group is acquired.
Fig. 2d is a diagram showing the correspondence relationship between the preparatory-group exposure time lengths Dur-L experienced by the respective preparatory wafer groups Lot at the respective use time points T. As can be seen in FIG. 2d, the light source under test, at a first point in time of use T [1], is required to perform an exposure operation on the first preliminary wafer set Lot [1] with a first optical radiation energy for a first preliminary set of exposure times Dur-L [1 ]; the light source under test performs the exposure operation of the second preliminary wafer set Lot [2] with the first optical radiation energy for the second preliminary exposure time period Dur-L [2] … at the second usage time point T [2], and performs the exposure operation of the nth preliminary wafer set Lot [ n ] with the first optical radiation energy for the nth usage time point T [ n ], for the nth preliminary exposure time period Dur-L [ n ].
Step S14: based on the preparatory group exposure time periods, preparatory sheet exposure time periods for average exposure of each wafer in the respective preparatory wafer groups are determined.
Since a plurality of preparatory wafer groups Lot [1: n ] each including a plurality of wafers W [1: m ], the preparatory wafer exposure time Dur-W [1: n ] for determining the average exposure of each wafer in each preparatory wafer group can be calculated based on the preparatory group exposure time Dur-L [1: n ] and the number of wafers in the corresponding preparatory wafer group Lot [1: n ].
For example, the nth preliminary wafer group Lot [ n ] includes m wafers W [1: m ], and step S13 acquires that the exposure operation is performed on the nth preliminary wafer group Lot [ n ] with the first optical radiation energy for the nth preliminary group exposure time Dur-L [ n ] at the nth usage time point T [ n ]. Since the nth preliminary group exposure time period Dur-L [ n ] is a superposition of the exposure time periods for the respective wafers W in the nth preliminary wafer group Lot [ n ], a preliminary wafer exposure time period Dur-W [1: n ] to which an average exposure per wafer is to be subjected is calculated based on the nth preliminary group exposure time period Dur-L [ n ] and the number of wafers in the nth preliminary wafer group Lot [ n ].
Fig. 2e shows the correspondence relationship between the preliminary wafer exposure time period Dur-W, which each wafer in each preliminary wafer group Lot is subjected to the average exposure, and the preliminary wafer group Lot. As can be seen from FIG. 2e, the light source-under-test averagely exposes each wafer in the first preliminary wafer set Lot [1] for the first preliminary wafer exposure duration Dur-W [1], the light source-under-test averagely exposes each wafer in the second preliminary wafer set Lot [2] for the second preliminary wafer exposure duration Dur-W [2], and the light source-under-test averagely exposes each wafer in the nth preliminary wafer set Lot [ n ] for the nth preliminary wafer exposure duration Dur-W [ n ].
Step S15: and determining the corresponding relation between the exposure time variable of the preparation film consisting of the exposure time of each preparation film and the use time consisting of each use time point.
With continued reference to fig. 2e, it can be determined from the above steps S11 to S14 that each of the n preliminary wafer sets Lot [1: n ] corresponds to one preliminary sheet exposure time duration Dur-W and one usage time point T, a plurality of which forms the preliminary sheet exposure time duration variable Dur-W, and a plurality of usage time points T, which forms the usage time T, so that a correspondence between the preliminary sheet exposure time duration variable Dur-W and the usage time T can be determined, which may be represented in the form of an icon or a function. The corresponding relation is used for reflecting the attenuation change state of the light source of the exposure device along with the use time.
An embodiment of the present application further provides an exposure apparatus light source attenuation monitoring apparatus, where the exposure apparatus light source attenuation monitoring apparatus is configured to execute the embodiment of the exposure apparatus light source attenuation monitoring method shown in fig. 1.
The embodiment can monitor the variation of the radiation intensity of the light source by monitoring the exposure time of the light source of the exposure device to a wafer, so that the attenuation variation of the light source can be determined.
According to the method for monitoring the attenuation of the light source of the exposure device shown in FIG. 1, the attenuation change of the light source along with the use time can be monitored. A light source such as a mercury lamp, as a consumable material, has a specific service life, that is, the radiation intensity decays rapidly after a certain period of use, and thus it is impossible to use the light source normally, and it is necessary to determine whether the light source has reached its service life according to the light source decay monitoring method of the exposure apparatus shown in fig. 1.
Fig. 3 is a flowchart illustrating a method for measuring the lifetime of a light source of an exposure apparatus according to an embodiment of the present application, in which a method for monitoring the light source attenuation of the exposure apparatus illustrated in fig. 1 is used to detect whether a target light source needs to be replaced when the target light source is out of service. As can be seen from fig. 3, the method for measuring the light source life of the exposure apparatus includes the following steps performed in sequence:
step S31: and acquiring the corresponding relation between the exposure time variable of the preparation film of the tested light source and the service time as shown in fig. 2 e.
The expression form of the correspondence relationship may be an icon or a function. The preparatory sheet exposure time period variable Dur-W shown in fig. 2e comprises a plurality of preparatory sheet exposure time periods during each of which the light source under test emits the same first energy of optical radiation; the using time T comprises a plurality of using time points which are in sequence in the time domain, and the exposure duration of the preparation film is in one-to-one correspondence with the using time points.
Step S32: and determining a film exposure duration threshold according to the corresponding relation, wherein the film exposure duration threshold is used for judging whether the detected light source is up to the life.
Wherein, the change speed of the exposure time length of the preparation film at each use time point position can be determined from the corresponding relation, and the change speed of the exposure time length of the preparation film can reflect the attenuation state of the light source to be measured.
Referring to fig. 4, which shows a diagram of the relationship between the exposure time variable of the preparation film and the usage time, it can be seen from fig. 4 that the abscissa is the usage time T, the ordinate is the exposure time variable Dur-W of the preparation film, and the curve X is the relationship between the exposure time variable of the preparation film and the usage time, and the slope of the curve X at each point can reflect the attenuation degree of the light source to be measured. Before the point of use time A in FIG. 4, the speed of change of the exposure time of the preparation film of the light source to be measured is close to 0, the exposure time of the preparation film is stable, and it is determined that the attenuation of the light source to be measured is small or no attenuation; at the point of time a in use in fig. 4, the speed of change of the exposure time period of the preliminary film of the light source under test suddenly increases, and the speed of change of the exposure time period of the preliminary film of the light source under test at the subsequent point of time of use keeps large continuously, the exposure time period of the preliminary film gradually increases, and it is determined that the light source under test gradually attenuates from the point of time a in use; at the time point of use B in fig. 4, the exposure time of the preparation film of the measured light source is increased to the film exposure time threshold, and it is determined that the measured light source needs to be replaced by the life, and if not, the production efficiency is seriously degraded.
The exposure time threshold of the film can be set according to the requirement of production efficiency.
Step S33: performing an exposure operation on a target wafer set at the first optical radiation energy using the measured light source; the target wafer group comprises at least one wafer.
Step S34: acquiring a target group exposure time length for the exposure operation on the target wafer group.
Step S35: based on the target set of exposure durations, a target sheet exposure duration for average exposure of each of the target wafers is determined.
Step S36: and judging whether the exposure time of the target film reaches the exposure time threshold value.
Step S37: and when the exposure time of the target film reaches the film exposure time threshold, determining that the measured light source needs to be replaced when the measured light source is in service life, otherwise, determining that the measured light source does not need to be replaced.
The present application also provides an exposure apparatus light source life measuring apparatus for executing the embodiment of the exposure apparatus light source life measuring method shown in fig. 3.
The embodiment can monitor the change of the radiation intensity of the light source by monitoring the exposure time of the light source of the exposure device to a wafer, thereby determining the attenuation change of the light source.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of this invention are intended to be covered by the scope of the invention as expressed herein.
Claims (9)
1. A method for monitoring light source attenuation of an exposure device is characterized by comprising the following steps:
acquiring n preparation wafer groups, wherein each preparation wafer group comprises m wafers, and n and m are positive integers greater than 1;
exposing the n preparation wafer groups sequentially according to a sequence by using a detected light source with first light radiation energy, and determining the time for exposing each preparation wafer group as a use time point;
acquiring exposure time of each prepared wafer in each prepared wafer group in average exposure;
and determining the corresponding relation between the exposure time variable of the preparation film consisting of the exposure time of each preparation film and the use time consisting of each use time point.
2. The method for monitoring light source degradation of an exposure apparatus according to claim 1, wherein the step of obtaining the preliminary wafer exposure time period for equally exposing each wafer in the respective preliminary wafer groups comprises:
acquiring a preparatory group exposure time length for carrying out the exposure operation on each preparatory wafer group;
based on the preparatory group exposure time periods, preparatory sheet exposure time periods for average exposure of each wafer in the respective preparatory wafer groups are determined.
3. The method for monitoring light source attenuation of an exposure apparatus according to claim 1, wherein in the step of sequentially performing the exposure operation on the n preliminary wafer groups in a sequential order using the light source to be measured at the first optical radiation energy, and determining a timing of performing the exposure operation on each preliminary wafer group as the usage time point, the light source to be measured performs the exposure operation on each wafer of the n preliminary wafer groups at the same first optical radiation energy.
4. The light source attenuation monitoring method for an exposure apparatus according to claim 1, wherein the correspondence is used to reflect an attenuation change of the light source to be measured.
5. An exposure apparatus light source attenuation monitoring apparatus characterized in that the exposure apparatus light source attenuation monitoring apparatus is configured to execute the exposure apparatus light source attenuation monitoring method according to any one of claims 1 to 4.
6. A method for measuring the life of a light source of an exposure apparatus, comprising the steps of:
acquiring a corresponding relation between the exposure time variable of the preparation film and the use time of a tested light source according to any one of claims 1 to 4;
determining a film exposure duration threshold according to the corresponding relation, wherein the film exposure duration threshold is used for judging whether the detected light source is up to the life;
performing an exposure operation on a target wafer set at the first optical radiation energy using the measured light source;
acquiring the exposure time of a target wafer of each wafer in the target wafers which are exposed averagely;
judging whether the exposure time of the target film reaches the exposure time threshold value of the film;
and when the target film exposure time reaches the film exposure time threshold, determining that the detected light source needs to be replaced when the detected light source is up to the service life.
7. The method for determining the lifetime of a light source of an exposure apparatus according to claim 6, wherein the step of obtaining the exposure time period of the target wafer for equally exposing each of the target wafers comprises:
acquiring a target group exposure time length for the exposure operation of the target wafer group;
based on the target set of exposure durations, a target sheet exposure duration for average exposure of each of the target wafers is determined.
8. The method for determining the lifetime of a light source of an exposure apparatus according to claim 6, wherein the target wafer group includes at least one wafer.
9. An exposure apparatus light source life measuring apparatus characterized by executing the exposure apparatus light source life measuring method according to any one of claims 6 to 8.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040023138A1 (en) * | 2002-06-19 | 2004-02-05 | Jens Stacker | Method of exposing a semiconductor wafer in an exposer |
| WO2005001913A1 (en) * | 2003-06-30 | 2005-01-06 | Nikon Corporation | Stage control apparatus, stage control method, light exposure apparatus, and light exposure method |
| CN102830590A (en) * | 2011-06-14 | 2012-12-19 | 上海微电子装备有限公司 | Light source life monitoring system and its monitoring method |
| CN203858450U (en) * | 2014-04-28 | 2014-10-01 | 上海大学 | Photoetching machine based on QLED (Quantum-dot Light Emitting Diode) light source |
-
2021
- 2021-06-22 CN CN202110690615.1A patent/CN113504708B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040023138A1 (en) * | 2002-06-19 | 2004-02-05 | Jens Stacker | Method of exposing a semiconductor wafer in an exposer |
| WO2005001913A1 (en) * | 2003-06-30 | 2005-01-06 | Nikon Corporation | Stage control apparatus, stage control method, light exposure apparatus, and light exposure method |
| CN102830590A (en) * | 2011-06-14 | 2012-12-19 | 上海微电子装备有限公司 | Light source life monitoring system and its monitoring method |
| CN203858450U (en) * | 2014-04-28 | 2014-10-01 | 上海大学 | Photoetching machine based on QLED (Quantum-dot Light Emitting Diode) light source |
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