CN113504703A - Manufacturing method of micro coaxial structure - Google Patents
Manufacturing method of micro coaxial structure Download PDFInfo
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- CN113504703A CN113504703A CN202110838168.XA CN202110838168A CN113504703A CN 113504703 A CN113504703 A CN 113504703A CN 202110838168 A CN202110838168 A CN 202110838168A CN 113504703 A CN113504703 A CN 113504703A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 239000010410 layer Substances 0.000 claims abstract description 159
- 238000000034 method Methods 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000012790 adhesive layer Substances 0.000 claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 238000011049 filling Methods 0.000 claims abstract description 10
- 239000000853 adhesive Substances 0.000 claims abstract description 9
- 230000001070 adhesive effect Effects 0.000 claims abstract description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 30
- 239000003292 glue Substances 0.000 claims description 27
- 238000005530 etching Methods 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 230000037452 priming Effects 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 229920005989 resin Polymers 0.000 claims description 5
- 239000011347 resin Substances 0.000 claims description 5
- 239000000654 additive Substances 0.000 claims description 3
- 230000000996 additive effect Effects 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 27
- 229910052802 copper Inorganic materials 0.000 description 27
- 239000010949 copper Substances 0.000 description 27
- 238000009713 electroplating Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 9
- 238000000576 coating method Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 238000005323 electroforming Methods 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical compound C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- -1 photoinitiator Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Micromachines (AREA)
Abstract
The invention discloses a manufacturing method of a micro coaxial structure, which comprises the following steps: forming a micro-coaxial bottom layer on a substrate; forming a supporting layer on the micro-coaxial bottom layer, and forming a micro-coaxial inner shaft on the supporting layer; forming a nano-imprinting adhesive layer covering the micro-coaxial bottom layer, the supporting layer and the inner shaft on the substrate, imprinting the nano-imprinting adhesive layer by adopting a preset imprinting mold, and taking out the imprinting mold after the nano-imprinting adhesive is solidified so as to form two grooves extending to the micro-coaxial bottom layer on the nano-imprinting adhesive layer; filling metal in each groove to form a micro coaxial side wall; and forming a micro coaxial top layer on the micro coaxial side wall, and removing the nano imprinting adhesive layer to obtain the micro coaxial structure. The manufacturing method can obtain the micro coaxial structure with the tidier side wall through a simpler process so as to meet the process requirement of a micro device with higher precision.
Description
Technical Field
The invention relates to the technical field of metal microstructure manufacturing, in particular to a manufacturing method of a micro-coaxial structure.
Background
The prior art mainly applies the liga technology, which is a micro-manufacturing process adopting multiple times of X-ray deep exposure corrosion and micro-electroforming molding, and comprises multiple processes of photoresist coating, X-ray exposure, development, micro-electroforming, photoresist removal, isolation layer removal, micro-plastic casting mold manufacturing, micro-plastic casting, secondary micro-electroforming and the like. Meanwhile, the front and back processes of the liga process further include PVD (Physical Vapor Deposition) and chemical mechanical polishing of the electroformed adhesion/seed layer.
However, the technology adopts a layer-by-layer accumulation electroforming mode, so that the difficulty of an alignment process in the manufacturing process of the micro-coaxial is increased, the alignment risk is high, the time consumption is long, and the manufactured micro-coaxial side wall is not tidy enough.
Disclosure of Invention
The embodiment of the application provides a manufacturing method of a micro coaxial structure, and the method can obtain the micro coaxial structure with a more regular side wall through a simpler process so as to realize high-efficiency production and meet the process requirements of a higher-precision micro device.
In a first aspect, the present invention provides the following technical solutions through an embodiment of the present invention:
a method of making a micro-coaxial structure, comprising:
forming a micro-coaxial bottom layer on a substrate; forming a support layer on the micro-coaxial bottom layer, and forming a micro-coaxial inner shaft on the support layer; forming a nano-imprinting adhesive layer covering the micro-coaxial bottom layer, the supporting layer and the inner shaft on the substrate, imprinting the nano-imprinting adhesive layer by adopting a preset imprinting mold, and taking out the imprinting mold after the nano-imprinting adhesive is solidified so as to form two grooves extending to the micro-coaxial bottom layer on the nano-imprinting adhesive layer; filling metal into each groove to form a micro coaxial side wall; and forming a micro coaxial top layer on the micro coaxial side wall, and removing the nano imprinting adhesive layer to obtain the micro coaxial structure.
Preferably, the pre-imprint mold includes a cover plate and two protrusions extending in a direction perpendicular to the cover plate.
Preferably, the taking out of the imprint mold after the nano-imprint glue is cured includes: and irradiating the nano-imprinting adhesive layer by adopting ultraviolet rays to penetrate through the imprinting mold, so that the nano-imprinting adhesive is cured, and taking out the imprinting mold.
Preferably, the nanoimprint paste comprises a main resin, a photoinitiator, a solvent and an additive, and the material of the imprint mold is a quartz material.
Preferably, the removing the nanoimprint glue layer includes: forming a release hole in the micro-coaxial top layer, the release hole penetrating through the micro-coaxial top layer; removing the nano imprinting glue filled in the micro coaxial side wall through the release hole; and removing the nano-imprint glue on the periphery of the micro-coaxial side wall.
Preferably, before filling metal into each of the grooves, the method further includes: and performing priming film treatment on the bottom surface of each groove to expose the micro-coaxial bottom layer.
Preferably, the priming film treatment is performed on the bottom surface of each groove, and comprises the following steps: and carrying out priming film treatment on the bottom surface of each groove by adopting a plasma priming film machine.
Preferably, the aspect ratio of the two grooves extending to the micro-coaxial substrate is greater than 4: 1.
Preferably, the thickness of the micro-axis is in the range of 300 microns to 600 microns and the thickness of the nanoimprint glue layer is in the range of 200 microns to 400 microns.
Preferably, the forming a support layer on the micro-coaxial bottom layer and forming a micro-coaxial inner shaft on the support layer includes: forming a dielectric layer on the micro coaxial bottom layer, and exposing the dielectric layer to determine a forming area of the supporting layer; forming a seed layer and a photoresist layer on the exposed dielectric layer in sequence, and exposing and developing the photoresist layer; forming a metal layer on the surface of the exposed seed layer after development; and removing the photoresist and etching the seed layer to obtain the supporting layer and the inner shaft.
One or more technical solutions provided in the embodiments of the present application have at least the following technical effects or advantages:
the manufacturing method of the micro-coaxial structure provided by the embodiment of the invention comprises the steps of firstly forming a micro-coaxial bottom layer on a substrate, then forming a supporting layer on the micro-coaxial bottom layer, and forming a micro-coaxial inner shaft on the supporting layer, wherein the supporting layer enables the inner shaft to be separated from the micro-coaxial bottom layer. And then forming a nano-imprinting adhesive layer covering the micro-coaxial bottom layer, the supporting layer and the inner shaft on the substrate, wherein the nano-imprinting adhesive layer completely wraps the micro-coaxial bottom layer, the supporting layer and the inner shaft. And (3) impressing the nano-imprinting adhesive layer by adopting a preset impressing mold, and taking out the impressing mold after the nano-imprinting adhesive is solidified so as to form two grooves extending to the micro-coaxial bottom layer on the nano-imprinting adhesive layer. And filling metal in each groove to form a micro-coaxial side wall. And finally, forming a micro coaxial top layer on the micro coaxial side wall, and removing the nano imprinting adhesive layer to obtain the micro coaxial structure. This application is pressed the nanometer impression glue of coating on the substrate through adopting the impression mould, obtains two recesses, and it is little coaxial lateral wall to obtain at this recess metallization (for example copper), and this technique has replaced the process of coating the photoetching glue layer by layer accumulation electroforming again among the prior art many times to make whole little coaxial production process simplify more, and the lateral wall that obtains is more neater, has characteristics such as consuming time short product optimization more.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on the drawings without creative efforts.
Fig. 1 is a flowchart of a method for fabricating a micro coaxial structure according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a deposited silicon dioxide and dielectric layer according to an embodiment of the present invention;
FIG. 3 is a schematic view of a deposition seed layer provided by an embodiment of the present invention;
FIG. 4 is a schematic diagram of the photoresist exposure development and the first copper electroplating according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a paste application and a seed layer deposition according to an embodiment of the invention;
FIG. 6 is a schematic diagram of the photoresist exposure development and the second copper electroplating according to an embodiment of the present invention;
FIG. 7 is a schematic diagram of wet stripping, copper etching and dry stripping provided by an embodiment of the present invention;
FIG. 8 is a schematic diagram of the application and dispensing of nanoimprint paste provided by an embodiment of the present invention;
FIG. 9 is a schematic view of an imprint mold provided in accordance with an embodiment of the present invention;
FIG. 10 is a schematic illustration of imprinting provided by embodiments of the present invention;
FIG. 11 is a schematic view of UV curing provided by an embodiment of the present invention;
FIG. 12 is a schematic illustration of demolding provided by embodiments of the present invention;
FIG. 13 is a schematic view of a base coating film provided by an embodiment of the present invention;
FIG. 14 is a schematic view of a third electroplated copper provided in accordance with an embodiment of the present invention;
FIG. 15 is a schematic view of a deposition seed layer provided by an embodiment of the invention;
FIG. 16 is a schematic illustration of a copper etch provided in accordance with an embodiment of the present invention;
FIG. 17 is a schematic illustration of a glue exposure development provided by an embodiment of the invention;
FIG. 18 is a schematic view of a fourth copper electroplating according to the embodiment of the present invention;
FIG. 19 is a schematic illustration of mechanical planarization and stripping of photoresist provided by an embodiment of the present invention;
FIG. 20 is a schematic view of an embodiment of the present invention providing release of the imprinting glue;
fig. 21 is a schematic structural diagram of a micro-coaxial structure according to an embodiment of the present invention;
fig. 22 is a schematic structural diagram of another micro-coaxial structure according to an embodiment of the present invention.
Detailed Description
The embodiment of the application provides a manufacturing method of a micro coaxial structure, and the method can obtain the micro coaxial structure with a tidier side wall through a simpler process, so that high-efficiency production is realized and the process requirement of a micro device with higher precision is met.
In order to solve the technical problems, the general idea of the embodiment of the application is as follows:
a method of making a micro-coaxial structure, comprising: forming a micro-coaxial bottom layer on a substrate; forming a support layer on the micro-coaxial bottom layer, and forming a micro-coaxial inner shaft on the support layer; forming a nano-imprinting adhesive layer covering the micro-coaxial bottom layer, the supporting layer and the inner shaft on the substrate, imprinting the nano-imprinting adhesive layer by adopting a preset imprinting mold, and taking out the imprinting mold after the nano-imprinting adhesive is solidified so as to form two grooves extending to the micro-coaxial bottom layer on the nano-imprinting adhesive layer; filling metal into each groove to form a micro coaxial side wall; and forming a micro coaxial top layer on the micro coaxial side wall, and removing the nano imprinting adhesive layer to obtain the micro coaxial structure.
Various structural schematics according to embodiments of the present disclosure are shown in the figures. The figures are not drawn to scale, wherein certain details are exaggerated and possibly omitted for clarity of presentation. The shapes of various regions, layers, and relative sizes and positional relationships therebetween shown in the drawings are merely exemplary, and deviations may occur in practice due to manufacturing tolerances or technical limitations, and a person skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions, as actually required.
In the context of the present disclosure, when a layer/element is referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present. In addition, if a layer/element is "on" another layer/element in one orientation, then that layer/element may be "under" the other layer/element when the orientation is reversed. In the context of the present disclosure, similar or identical components may be referred to by the same or similar reference numerals.
In order to better understand the technical solution, the technical solution will be described in detail with reference to the drawings and the specific embodiments.
It should be noted that, in the embodiment of the present application, the device for implementing the exposure process may be a step exposure device, and the back-to-back alignment precision of the device may reach 20nm, which may meet the process requirements of higher precision micro mechanical electronic components. For the sake of understanding, in the structural schematic diagram shown in the attached drawings, the plated metal is emphasized by a diagonal pattern, and the nano-imprint glue is emphasized by a dot matrix pattern.
In a first aspect, an embodiment of the present invention provides a method for manufacturing a micro coaxial structure. Specifically, as shown in fig. 1, the manufacturing method includes the following steps S101 to S105.
Step S101, forming a micro-coaxial underlayer on a substrate.
First, as shown in fig. 2, a substrate 100 is provided, the substrate 100 may be a silicon substrate or a germanium substrate, etc., and an active region, etc. may have been prepared on the substrate 100, which is not limited herein.
Specifically, the acquisition process of the substrate 100 may be: using pecvd (plasma Enhanced Chemical Vapor deposition), plasma Enhanced Chemical Vapor deposition) to deposit a layer of silicon dioxide 10 having a thickness of about 1000 μm, and forming a dielectric layer 20 on the silicon dioxide to obtain the substrate 100.
Then, as shown in fig. 3, a seed layer 101 is deposited on the substrate 100, the material of the seed layer 101 may be Ti or TiN, and the Deposition process may be PVD (Physical Vapor Deposition), which is not limited herein. Next, as shown in fig. 4, a photoresist 102 is formed on the seed layer 101, the photoresist 102 is exposed and developed, and the exposed surface of the seed layer after the development is plated with a metal. It should be noted that the micro coaxial structure provided in this embodiment may be a copper material, and the metal plating process may be electroplating copper, and of course, the micro coaxial structure may also be other suitable metal materials, which is not limited in this application.
Specifically, a seed layer may be coated with a copper electroplating corrosion resistant photoresist JSR151 having a thickness of about 55 μm by using a conventional coating process, and the photoresist 102 is exposed and developed by using a first mask to obtain a predetermined pattern, and then electroplated with copper to form the micro-coaxial bottom layer 103.
Step S102, a support layer is formed on the micro-coaxial bottom layer, and a micro-coaxial inner shaft is formed on the support layer.
In an alternative embodiment, the step S102 may include: forming a dielectric layer on the micro-coaxial bottom layer, and exposing the dielectric layer to determine a forming area of the supporting layer; forming a seed layer and a photoresist layer on the exposed dielectric layer in sequence, and exposing and developing the photoresist layer; forming a metal layer on the surface of the exposed seed layer after development; and removing the photoresist and etching the seed layer to obtain the supporting layer and the inner shaft.
For example, as shown in fig. 5, SU8 may be coated as a support layer 104 on a micro-coaxial underlayer, followed by deposition of a seed layer 105 of Ti or TiN material on SU 8. Next, as shown in fig. 6, a photoresist 106 is formed on the seed layer 105, the photoresist 106 is exposed and developed, and the exposed surface of the seed layer after the development is plated with a metal to obtain an inner core 107. Specifically, a photoresist JSR151 may be coated on the support layer 104, exposed and developed using a second mask having a different size from the first mask to obtain a predetermined pattern, and then subjected to second copper electroplating.
At this time, in order to make the inner shaft surface smooth, the substrate after the second copper electroplating may be subjected to a CMP (Chemical-Mechanical Planarization) process.
Then, as shown in fig. 7, the substrate after the second copper electroplating is subjected to photoresist removal and copper etching. Specifically, the support layer 104 and the inner core 107 on the support layer 104 can be formed by wet stripping the photoresist JSR151, etching away the seed layer, and dry stripping the remaining photoresist.
And S103, forming a nano-imprinting adhesive layer covering the micro-coaxial bottom layer, the supporting layer and the inner shaft on the substrate, imprinting the nano-imprinting adhesive layer by adopting a preset imprinting mold, and taking out the imprinting mold after the nano-imprinting adhesive is solidified so as to form two grooves extending to the micro-coaxial bottom layer on the nano-imprinting adhesive layer.
Specifically, as shown in fig. 8, the nanoimprint paste 108 covering the micro-coaxial underlayer 103, the support layer 104, and the inner core 107 may be formed on the substrate by spin coating or dot coating, but may be formed by other methods, which are not limited herein. As shown in fig. 9, the pre-imprint mold 109 may include a cover plate 30 and two protrusions 40 extending in a direction perpendicular to the cover plate 30. Wherein the two protrusions 40 have the same depth and the same width. It should be noted that the imprint mold 109 provided in the present application is designed according to the product structure, and is a mold or a tool that can be easily released in the nanoimprint paste.
As shown in fig. 10, the imprint mold 109 is aligned to the substrate pattern under the nanoimprint glue, the imprint mold 109 is then precisely imprinted on the substrate at a certain speed and pressure, and after the imprinting is completed, as shown in fig. 11, ultraviolet light with a certain wavelength range is irradiated to the nanoimprint glue layer through the imprint mold 109, and the ultraviolet light and the nanoimprint glue 108 undergo a cross-linking reaction, so that the nanoimprint glue 108 is cured. Finally, as shown in fig. 12, the mold is removed, and two grooves 200 extending to the bottom layer of the micro-axis are formed in the nanoimprint glue layer, where a is the depth of the groove and b is the width of the groove.
Optionally, the two grooves 200 formed to extend to the micro-coaxial substrate 103 each have an aspect ratio greater than 4: 1. Additionally, as an alternative embodiment, where the resulting micro-coaxial thickness is in the range of 300 microns to 600 microns, the thickness of the nanoimprint glue layer may be selected in the range of 200 microns to 400 microns.
Specifically, in order to enable the ultraviolet light to penetrate through the imprint mold 109 to reach the nanoimprint paste 108 and enable the nanoimprint paste 108 to be cured, the imprint mold 109 may be made of quartz material, which enables the ultraviolet light to penetrate better.
For example, the nanoimprint paste is a paste that can undergo a crosslinking reaction with ultraviolet light, such as: the imprinting glue can comprise main resin, photoinitiator, solvent, additive and other components, wherein the main resin can be classified into vinyl ether, epoxy resin, acrylate and other types according to the difference of the main resin of the imprinting glue. Of course, the nano-imprinting glue can be of other types, so long as the substrate has good binding force and lower surface energy, the nano-imprinting glue and the imprinting mold are easy to demould and are not easy to adhere to each other.
Step S104, filling metal in each groove to form micro coaxial side walls.
It should be noted that, since a small amount of nanoimprint paste is likely to remain at the bottom of the demolded groove 200, in order to remove the remaining nanoimprint paste, as shown in fig. 13, before filling metal into each groove, the method further includes: and performing priming film treatment on the bottom surface of each groove to expose the micro-coaxial bottom layer. Specifically, the primer treatment may be performed on the bottom surface of each groove using a plasma primer machine. Of course, other methods for effectively removing the residual nanoimprint resist may be used, and are not limited herein.
Specifically, as shown in fig. 14, copper may be filled in each of the grooves by electroplating copper, so as to form micro-coaxial sidewalls 201. In order to make the copper surfaces of the two side walls smooth, the substrate after the third copper electroplating can be subjected to a CMP process.
And S105, forming a micro coaxial top layer on the micro coaxial side wall, and removing the nano imprinting adhesive layer to obtain a micro coaxial structure.
Specifically, as shown in fig. 15, a Ti or TiN seed layer 202 is deposited on the substrate after the third copper electroplating, and then, as shown in fig. 16, a copper etching process including gumming, exposure, and development is performed on the seed layer, thereby leaving the release holes 203 and the positions of the pre-electroplated copper. Then, as shown in fig. 17, a photoresist 204 is formed on the seed layer, and the photoresist 204 is exposed and developed. Then, as shown in fig. 18, a fourth copper electroplating is performed. Finally, a microcoaxial top layer 205 is formed on the microcoaxial side wall 201, which is reserved with a release hole 203, the release hole 203 penetrates through the microcoaxial top layer 205,
after the mechanical planarization CMP of the micro-coaxial top layer 205, as shown in fig. 19, the nano-imprint paste filled in the micro-coaxial sidewall 201 is removed through the release hole 203, as shown in fig. 20, so that the release process of the nano-imprint paste in the micro-coaxial sidewall is faster and more efficient. In addition, the existing photoresist stripping method can be used to remove the nanoimprint photoresist on the periphery of the micro-coaxial sidewall to form an unfilled micro-coaxial structure, as shown in fig. 21.
Of course, in order to further simplify the process, as another alternative embodiment, after depositing a Ti or TiN seed layer on the substrate after the third copper electroplating, a photoresist is formed on the seed layer, and the photoresist is exposed and developed, and then the fourth copper electroplating is performed. Finally, a micro-coaxial top layer is formed on the micro-coaxial sidewall. And removing the nano-imprint glue on the periphery of the micro-coaxial side wall and the nano-imprint glue in the micro-coaxial side wall through glue removing treatment.
Finally, as shown in fig. 22, a copper etching process is performed to remove the exposed seed layer, thereby finally forming the micro-coaxial structure. Specifically, the copper etching treatment may be performed by an existing etching method.
The technical scheme in the embodiment of the application at least has the following technical effects or advantages:
according to the manufacturing method of the micro-coaxial structure, the nano-imprinting adhesive layer covering the micro-coaxial bottom layer, the supporting layer and the inner shaft is formed on the substrate, the pre-arranged imprinting mold is used for imprinting on the nano-imprinting adhesive layer, and demolding is carried out after the nano-imprinting adhesive is solidified, so that two grooves extending to the micro-coaxial bottom layer are formed in the nano-imprinting adhesive layer. And filling metal in each groove to form a micro-coaxial side wall. And finally, forming a micro coaxial top layer on the micro coaxial side wall, and removing the nano imprinting adhesive layer to obtain the micro coaxial structure. The manufacturing method is simple in process and short in time consumption, and the micro-coaxial structure manufactured by the method has the characteristics of smooth side wall, regular transmission waveform and the like.
In the above description, the technical details of patterning, etching, and the like of each layer are not described in detail. It will be appreciated by those skilled in the art that layers, regions, etc. of the desired shape may be formed by various technical means. In addition, in order to form the same structure, those skilled in the art can also design a method which is not exactly the same as the method described above. In addition, although the embodiments are described separately above, this does not mean that the measures in the embodiments cannot be used in advantageous combination.
It will be apparent to those skilled in the art that various changes and modifications can be made in the present disclosure without departing from the spirit and scope of the disclosure. Thus, if such modifications and variations of the present disclosure fall within the scope of the claims of the present disclosure and their equivalents, the present disclosure is also intended to encompass such modifications and variations.
Claims (10)
1. A method for manufacturing a micro coaxial structure is characterized by comprising the following steps:
forming a micro-coaxial bottom layer on a substrate;
forming a support layer on the micro-coaxial bottom layer, and forming a micro-coaxial inner shaft on the support layer;
forming a nano-imprinting adhesive layer covering the micro-coaxial bottom layer, the supporting layer and the inner shaft on the substrate, imprinting the nano-imprinting adhesive layer by adopting a preset imprinting mold, and taking out the imprinting mold after the nano-imprinting adhesive is solidified so as to form two grooves extending to the micro-coaxial bottom layer on the nano-imprinting adhesive layer;
filling metal into each groove to form a micro coaxial side wall;
and forming a micro coaxial top layer on the micro coaxial side wall, and removing the nano imprinting adhesive layer to obtain the micro coaxial structure.
2. The method of claim 1, wherein the pre-imprint mold includes a cover plate and two protrusions extending in a direction perpendicular to the cover plate.
3. The method of claim 1, wherein removing the imprint mold after the nanoimprint paste is cured comprises:
and irradiating the nano-imprinting adhesive layer by adopting ultraviolet rays to penetrate through the imprinting mold, so that the nano-imprinting adhesive is cured, and taking out the imprinting mold.
4. The method of claim 1, wherein the nanoimprint paste includes a host resin, a photoinitiator, a solvent, and an additive, and the material of the imprint mold is a quartz material.
5. The method of claim 1, wherein the removing the nanoimprint glue layer comprises:
forming a release hole in the micro-coaxial top layer, the release hole penetrating through the micro-coaxial top layer;
removing the nano imprinting glue filled in the micro coaxial side wall through the release hole;
and removing the nano-imprint glue on the periphery of the micro-coaxial side wall.
6. The method of claim 1, wherein prior to filling metal in each of the grooves, further comprising:
and performing priming film treatment on the bottom surface of each groove to expose the micro-coaxial bottom layer.
7. The method of claim 6, wherein said priming film treatment of the bottom surface of each of said grooves comprises: and carrying out priming film treatment on the bottom surface of each groove by adopting a plasma priming film machine.
8. The method of claim 1, wherein the two grooves extending into the microcoaxial floor each have an aspect ratio greater than 4: 1.
9. The method of claim 1, wherein the micro-axis has a thickness in a range of 300 microns to 600 microns and the nanoimprint glue layer has a thickness in a range of 200 microns to 400 microns.
10. The method of claim 1, wherein forming a support layer on the microcoaxial floor and an inner microcoaxial shaft on the support layer comprises:
forming a dielectric layer on the micro coaxial bottom layer, and exposing the dielectric layer to determine a forming area of the supporting layer;
forming a seed layer and a photoresist layer on the exposed dielectric layer in sequence, and exposing and developing the photoresist layer;
forming a metal layer on the surface of the exposed seed layer after development;
and removing the photoresist and etching the seed layer to obtain the supporting layer and the inner shaft.
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