CN113497322B - Device comprising a waveguide for radio frequency signals - Google Patents
Device comprising a waveguide for radio frequency signals Download PDFInfo
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- CN113497322B CN113497322B CN202110362929.9A CN202110362929A CN113497322B CN 113497322 B CN113497322 B CN 113497322B CN 202110362929 A CN202110362929 A CN 202110362929A CN 113497322 B CN113497322 B CN 113497322B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/16—Dielectric waveguides, i.e. without a longitudinal conductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
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Abstract
An apparatus includes a waveguide for a radio frequency signal and at least one active element including a transition metal oxide material and two electrodes for applying a control voltage to the transition metal oxide material.
Description
Technical Field
Exemplary embodiments relate to an apparatus including a waveguide for a Radio Frequency (RF) signal.
Background
Devices of the aforementioned type may be used for transmitting RF signals, for example from a source to a sink.
Disclosure of Invention
The scope of protection sought for the various embodiments of the invention is as set forth in the independent claims. The exemplary embodiments and features (if any) described in this specification that are not to be included in the scope of the independent claims should be construed as examples useful for understanding the various exemplary embodiments of the invention.
Exemplary embodiments relate to an apparatus comprising a waveguide for a radio frequency signal and at least one active element comprising a transition metal oxide material (TMO) and two electrodes for applying a control voltage to the transition metal oxide material. This enables a change in electrical characteristics at the portion of the waveguide where the active element 120 is located to be affected, for example by altering the control voltage, so that propagation of electromagnetic waves associated with the RF signal can be affected.
According to further exemplary embodiments, the TMO material may include at least one of the following: tungsten trioxide (WO) 3 ) Titanium dioxide (TiO) 2 ) Vanadium dioxide (VO) 2 ) Nickel oxide (NiO), manganese dioxide (MnO) 2 )。
According to a further exemplary embodiment, at least one active element may be at least partially disposed within or at the waveguide, preferably such that at least a portion of the active element or the TMO material of the active element may interact with at least a portion of the RF signal propagating within the waveguide.
According to a further exemplary embodiment, disposing at least one active element at least partially within or at the waveguide may include disposing the at least one active element relative to the waveguide such that at least a portion of the active element or a TMO material of the active element may interact with at least a portion of an RF signal propagating outside the waveguide.
According to a further exemplary embodiment, the at least one active element is configured to change between a dielectric state, in which the at least one active element is non-conductive, and a conductive state, in which the at least one active element is conductive, depending on the control voltage.
According to a further exemplary embodiment, the at least one active element may be configured to perform a phase change and/or a metal-to-non-metal transition, such as a Mott transition, depending on an electric field applied to the TMO material, e.g. in the form of a control voltage. Thus, by applying a specific control voltage, the active element can be influenced to exhibit similar electrical properties as a metallic conductor or as a dielectric material (i.e. a spacer). According to a further exemplary embodiment, this property may also be changed gradually or continuously by changing the control voltage gradually or continuously, which for example enables selective attenuation of RF signal(s) propagating within the waveguide.
According to a further exemplary embodiment, the at least one active element is at least partially arranged within a) the core of the waveguide, and/or within b) the cladding of the waveguide (or each within the at least one cladding).
According to a further exemplary embodiment, the waveguide comprises at least a) a circular cross-section or b) a non-circular cross-section, such as an elliptical cross-section or a polygonal cross-section, such as a rectangular cross-section, in cross-section.
According to further exemplary embodiments, the waveguide may include or consist of one or more dielectric materials.
According to further exemplary embodiments, the core of the waveguide may comprise or consist of a dielectric material.
According to a further exemplary embodiment, the at least one cladding layer of the waveguide may comprise or consist of a dielectric material.
According to further exemplary embodiments, the dielectric material may comprise a polymeric material that is cost effective and enables efficient production.
According to a further exemplary embodiment, the waveguide comprises or is at least one polymer fiber.
According to a further exemplary embodiment, the waveguide is a polymer fiber having a core of a polymer material and a cladding surrounding the core, wherein the cladding preferably further comprises a polymer material. According to further exemplary embodiments, an optional coating may be provided, which may for example surround the cladding.
According to a further exemplary embodiment, the at least one active element comprises a stack of layers stacked along a first axis, preferably on top of each other, wherein the stack comprises a first layer formed by a first electrode of the two electrodes, a second layer formed by a second electrode of the two electrodes, and a third layer formed by a Transition Metal Oxide (TMO) material, the third (e.g. TMO) layer being arranged between the first layer and the second layer.
According to a further exemplary embodiment, the first axis of the stack extends substantially parallel to the longitudinal axis of the waveguide. According to a further exemplary embodiment, "substantially parallel" means that the angle between the longitudinal axis of the waveguide and the first axis of the stack may be in the range between 0 degrees and 20 degrees.
According to a further exemplary embodiment, at least one of the first electrode and the second electrode comprises a metal layer ("electrode layer").
According to a further exemplary embodiment, at least one of the first electrode and the second electrode comprises a thickness smaller than a skin depth of at least one frequency component of the radio frequency signal. This enables RF signal(s) propagating within the waveguide to propagate (at least partially) through the at least one active element (and its electrode (s)), especially in the case where the at least one active element or its TMO material is in its dielectric (i.e., non-metallic) state, which state may also be considered an "OFF" state according to further exemplary embodiments.
According to a further exemplary embodiment, in the off-state the TMO material vehicle of the active element exhibits dielectric properties (i.e. non-conductive properties), thus enabling in principle the propagation of RF signals and associated Electromagnetic (EM) waves through the TMO material layer (and according to a further preferred embodiment also through the electrode layer(s) if they are sufficiently thin).
According to a further exemplary embodiment, in the "on" state the TMO material of the active element exhibits metallic (i.e. conductive) properties, thus in principle preventing RF signals and associated Electromagnetic (EM) waves from propagating through the TMO material layer, i.e. attenuating RF signals from a transmission point of view. According to further exemplary embodiments, however, the degree of attenuation may be controlled by selecting the layer thickness of the TMO material layer. In particular, similar to the electrode layer according to further exemplary embodiments, if the TMO material layer has a sub-skin depth thickness value, at least a portion of the RF signal(s) may propagate through the TMO material layer even in an on-state.
According to a further exemplary embodiment, at least one of the first electrode and the second electrode comprises a thickness smaller than a skin depth of a highest frequency component of the radio frequency signal. This enables the highest frequency component of the radio frequency signal to be at least partially transmitted (i.e. propagated) through the at least one active element.
According to a further exemplary embodiment, at least one of the first electrode and the second electrode comprises a thickness of less than 1 micrometer (μm), preferably less than 500 nanometers (nm).
According to a further exemplary embodiment, the third layer comprises a thickness that is greater than a skin depth of at least one frequency component of the radio frequency signal, in some embodiments, the thickness is greater than 300% of the skin depth, such as greater than 500% of the skin depth.
According to a further exemplary embodiment, the apparatus comprises at least one control device configured to provide at least one control voltage to the at least one active element, whereby the dielectric properties or the electrical properties of the TMO material may be influenced, as exemplarily explained above. Thus enabling control of the degree of attenuation or propagation of the radio frequency signal(s).
According to a further exemplary embodiment, the at least one control device is configured to provide a) a plurality of discrete voltage values, or b) a continuous voltage value, at least temporarily, to the at least one control voltage.
According to further exemplary embodiments, providing a plurality of (e.g., two) different discrete voltage values may be used to turn on and off at least one active element 120, i.e., switch at least one active element between its conductive state of TMO material and its dielectric state of TMO material.
According to a further exemplary embodiment, providing the active elements with a continuous voltage value may be used to continuously change at least one active element between its conductive state of the TMO material and its dielectric state of the TMO material, thus for example affecting the continuous degree of change of the attenuation.
According to a further exemplary embodiment, the apparatus comprises at least one impedance transformer, wherein preferably the at least one impedance transformer is arranged adjacent to the at least one active element. As an example, at least one impedance transformer may be used to perform impedance matching between the waveguide and the at least one active element. Particularly in case the at least one active element is in an off-state, whereby reflections of the RF signal at the interface between the waveguide and the at least one active element can be avoided or at least reduced.
According to further exemplary embodiments, an impedance transformer having an electrical length of one quarter wavelength at the operating frequency (i.e. the (center) frequency of the RF signal (s)) may be provided, the characteristic impedance Z thereof match May be characterized, for example, by the following:
According to a further exemplary embodiment, the at least one impedance transformer may comprise a segment of a waveguide having a predetermined length.
According to a further exemplary embodiment, the at least one impedance transformer is provided, for example based on [ equation 1], such that in the off-state of the at least one active element, there is (at least substantially) no undesired reflection at the waveguide/active element interface and propagation of the RF signal between the input and the output is not hindered.
According to a further exemplary embodiment, the situation may change once a non-zero control voltage is applied to at least one active element or to the TMO material thereof, respectively. The layer comprising the transition metal oxide now becomes conductive (on-state), in particular highly conductive by indirect contact with a conductive electrode ("bias pad"), which according to a further exemplary embodiment is a sub-skin depth conductor.
According to a further exemplary embodiment, the composite electrical thickness of the at least one active element or TMO material (layer) thereof may now be significantly increased, for example in the on-state (compared to the off-state), thus resulting in a significant reflection of the RF signal at the boundary or interface between the waveguide and the at least one active element.
According to a further exemplary embodiment, it is assumed that an RF signal has been provided to at least one active element on the "input" side of the at least one active element, which may result in a significantly attenuated RF signal at the "output" of the device (i.e. on the output side of the at least one active element).
According to a further exemplary embodiment, the composite electrical thickness of the at least one active element or active (e.g. TMO) region thereof may be, for example, in the range of several skin depths of the RF signal(s), so that the RF signal at the output may be (in particular completely) cancelled.
According to a further exemplary embodiment, the composite electrical thickness of the at least one active element may depend on the physical thickness of the transition metal oxide layer, and may also depend on the mode of operation of the at least one active element.
According to further exemplary embodiments, two modes may be distinguished:
1. according to an exemplary first mode, the active (e.g., TMO) layer thickness in the on state is several skin depths thick;
2. according to an exemplary second mode, the active layer thickness in the on state is sub-skin depth thick.
According to a further exemplary embodiment, in the first mode, the device may be operable, for example, by applying a continuous DC (direct current) control voltage, i.e. a control voltage which may vary from 0V (volts) to a maximum value Vmax, vmax >0V, wherein, for example, the electrical conductivity and thus the skin depth of the transition metal oxide layer may be a function of the voltage value of the applied control voltage. This (exemplary first) mode of operation may also be referred to as an "analog waveguide or transmission line attenuator".
According to a further exemplary embodiment, in the second mode, even if the highest allowed control voltage (value Vmax) is applied to at least one active element or TMO material (layer) thereof, one active area or TMO layer may not be sufficient to completely cancel the input RF signal. Thus, in order to provide complete controllability of the amplitude of the output RF signal, according to further exemplary embodiments, several layers of TMO material may be provided, for example in the form of a plurality of (preferably adjacent) active elements.
In other words, according to a further exemplary embodiment, a plurality of active elements may be provided in the waveguide, wherein at least two active elements may be arranged adjacent to each other.
According to further exemplary embodiments, a plurality of active elements may be arranged in series along one axis or the longitudinal axis of the waveguide, wherein preferably adjacent active elements share one common electrode. As an example, the second electrode of the first active element may also form the first electrode of the second active element arranged adjacent to the first active element.
According to further exemplary embodiments, the plurality of active elements may be provided in a length segment of the waveguide, which length segment corresponds to 20% or less, preferably to 10% or less, more preferably to 5% or less of the total length of the waveguide. In other words, the region of the waveguide comprising one or more active elements according to embodiments may form a relatively small portion compared to the total length of the waveguide.
According to further exemplary embodiments, the at least one active element or the plurality of active elements may be arranged at the first and/or second axial end of the waveguide.
According to a further exemplary embodiment, the apparatus may comprise a coupler, wherein the at least one active element is connected to at least one port of the coupler.
According to a further exemplary embodiment, at least a first active element or a first group of active elements is connected to a first port of the coupler and at least a second active element or a second group of active elements is connected to a second port of the coupler.
Further exemplary embodiments relate to a method of using a device comprising a waveguide for radio frequency signals and at least one active element comprising a transition metal oxide material and two electrodes for applying a control voltage to the transition metal oxide material, the method comprising at least one of the following steps: a) Processing the radio frequency signal; b) Affecting the radio frequency signal, in particular the radio frequency signal propagating in the waveguide; c) Attenuating the radio frequency signal; d) Reflecting the radio frequency signal; e) Selecting one or more modes of the radio frequency signal; f) Modulating the radio frequency signal.
Drawings
Some exemplary embodiments will now be described with reference to the accompanying drawings, in which:
FIG. 1 schematically depicts a simplified block diagram of an apparatus according to an example embodiment;
FIGS. 2A, 2B each schematically depict a simplified side view of an apparatus according to further exemplary embodiments;
FIG. 3A schematically depicts a simplified cross-sectional elevation view of a waveguide according to a further exemplary embodiment;
FIG. 3B schematically depicts a simplified cross-sectional elevation view of a waveguide according to a further exemplary embodiment;
FIG. 4 schematically depicts a simplified side view of an active element according to a further exemplary embodiment;
FIG. 5 schematically depicts a simplified side view of an apparatus according to a further exemplary embodiment;
FIG. 6 schematically depicts a simplified side view of an apparatus according to a further exemplary embodiment;
FIG. 7 schematically depicts a simplified perspective view of a device according to a further exemplary embodiment;
FIG. 8 schematically depicts a simplified perspective view of a device according to a further exemplary embodiment; and
fig. 9 schematically depicts a block diagram of an apparatus according to a further exemplary embodiment.
Detailed Description
Fig. 1 schematically depicts a simplified block diagram of an apparatus 100 according to an exemplary embodiment. The apparatus 100 comprises a waveguide 110 for Radio Frequency (RF) signals RF1, RF1' and at least one active element 120, the active element 120 comprising a Transition Metal Oxide (TMO) material and two electrodes for applying a control voltage CV to the TMO material. This enables to influence the variation of the electrical characteristics at the portion of the waveguide 110 where the active element 120 is located, for example by modifying the control voltage CV, so that the propagation of electromagnetic waves associated with the RF signal can be influenced, with reference to another RF signal RF'.
According to further exemplary embodiments, at least one active element 120 may be at least partially disposed within waveguide 110 or at waveguide 110, preferably such that active element 120 or at least a portion of the TMO material of active element 120 may interact with at least a portion of RF signal(s) RF1, RF1' propagating within waveguide 110.
According to further exemplary embodiments, disposing at least one active element 120 at least partially within the waveguide 110 or at the waveguide 110 may include disposing the at least one active element 120 relative to the waveguide 110 such that at least a portion of the active element 120 or TMO material of the active element 120 may interact with at least a portion of the RF signals RF1, RF1' propagating outside the waveguide.
According to a further exemplary embodiment, the at least one active element 120 is configured to change between a dielectric state, in which the at least one active element 120 (or the TMO material thereof, respectively) is non-conductive, and a conductive state, in which the at least one active element 120 (or the TMO material thereof, respectively) is conductive, depending on the control voltage CV.
According to further exemplary embodiments, the at least one active element 120 may be configured to perform a phase change and/or a metal-to-non-metal transition, such as a mott transition, depending on an electric field applied to the TMO material (e.g., in the form of a control voltage CV). Thus, by applying a particular control voltage CV, the active element 120 can be affected to exhibit similar electrical properties as a metallic conductor or as a dielectric material (i.e., a spacer).
According to a further exemplary embodiment, this property may also be gradually or continuously changed by gradually or continuously changing the control voltage CV, which for example enables selective attenuation of the RF signal(s) RF1, RF1' propagating within the waveguide 110.
According to further exemplary embodiments, referring to the schematic side view of the apparatus 100a of fig. 2A, at least one active element 120 is at least partially disposed within a) the core 112 of the waveguide 110, and/or b) the cladding 114 of the waveguide 110 (or at least one cladding each).
According to the example of fig. 2A, the cross-section of at least one active element 120 substantially corresponds to the cross-section of waveguide 110 (i.e., including core 12 and cladding 114).
According to a further exemplary embodiment, referring to the schematic side view of the apparatus 100B of fig. 2B, at least one active element 120 is arranged at least partially within the core 112 of the waveguide 110, instead of within the cladding 114 of the waveguide 110.
According to a further exemplary embodiment, referring to the cross-sectional elevation of fig. 3A, waveguide 110a includes at least a cross-section having a) a circular cross-section of core 112a and cladding 114 a.
According to further exemplary embodiments, referring to the cross-sectional elevation view of fig. 3B, the waveguide 110B comprises a non-circular cross-section, such as an elliptical cross-section, or a polygonal cross-section, such as a rectangular cross-section, as depicted in fig. 3B. Currently, the waveguide 110B of fig. 3B includes a core 112B having a rectangular cross-section, the core 112B being illustratively embedded (e.g., "sandwiched") between two cladding layers 114a, 114B (top and bottom cladding layers).
According to further exemplary embodiments, waveguide configurations having non-circular cross-sections, wherein the core is completely circumferentially surrounded by cladding(s) (not shown) are also possible.
According to further exemplary embodiments, like the waveguides 110, 110a, 110b, the at least one active element 120 may have a) a circular cross-section or b) a non-circular cross-section, such as an elliptical or polygonal cross-section, such as a rectangular cross-section.
According to further exemplary embodiments, the at least one active element 120 may be fully embedded within the at least one cladding layer, or may be partially embedded within the at least one cladding layer, such as sandwiched between a top cladding layer and a bottom cladding layer.
According to further exemplary embodiments, the waveguides 110, 110a, 110b may include or consist of one or more dielectric materials.
According to further exemplary embodiments, the cores 112, 112a, 112b of the waveguides 110, 110a, 110b may comprise or consist of a dielectric material.
According to further exemplary embodiments, at least one cladding 114, 114a, 114b of the waveguide 110, 110a, 110b may comprise or consist of a dielectric material.
According to further exemplary embodiments, the dielectric material may comprise a polymeric material that is cost effective and enables efficient production.
According to further exemplary embodiments, the waveguides 110, 110a, 110b comprise or are at least one polymer fiber.
According to a further exemplary embodiment, the waveguides 110, 110a, 110b are polymer fibers having a core 112, 112a, 112b of a polymer material and a cladding 114, 114a,114b surrounding the core, wherein the cladding preferably further comprises a polymer material. According to further exemplary embodiments, an optional coating (not shown) may be provided, which may, for example, surround the cladding 114, 114a,114b.
According to a further exemplary embodiment, see fig. 4, the at least one active element 120a comprises a stack S of layers stacked along the first axis a1, preferably on top of each other, wherein the stack S comprises a first layer 122 formed by a first electrode 122 of the two electrodes 122, 123, a second layer 123 formed by a second electrode 123 of the two electrodes, and a third layer 121 formed by a Transition Metal Oxide (TMO) material, the third (e.g. TMO) layer 121 being arranged between the first layer 122 and the second layer 123.
According to a further exemplary embodiment, see the device 100c of fig. 5, the first axis a1 of the stack S extends substantially parallel to the longitudinal axis LA (see also fig. 1) of the waveguide 110. According to further exemplary embodiments, "substantially parallel" means that the angle between the longitudinal axis LA of the waveguide 110 and the first axis a1 (fig. 4) of the stack S may be in the range between 0 degrees and 20 degrees.
According to a further exemplary embodiment, at least one of the first electrode 122 and the second electrode 123 comprises a metal layer ("electrode layer").
According to a further exemplary embodiment, at least one of the first electrode 122 and the second electrode 123 comprises a thickness t1 smaller than the skin depth of at least one frequency component of the radio frequency signal RF1, RF1' (fig. 1). This enables RF signals propagating within the waveguide 110 to propagate (at least partially) through the at least one active element 120 (and its electrode (s)), especially in the case where the at least one active element 120 or its TMO material 121 is in its dielectric (i.e., non-metallic) state, which state may also be considered an "OFF" state according to further exemplary embodiments.
According to a further exemplary embodiment, the TMO material 121 (fig. 4) of the active element 120 exhibits dielectric properties (i.e. non-conductive properties) in the off-state, thus enabling in principle the RF signals RF1, RF1' and associated Electromagnetic (EM) waves to propagate through the TMO material layer 121 (and, according to a further preferred embodiment, also through the electrode layer(s) 122, 123 if they are sufficiently thin).
According to a further exemplary embodiment, in the "on" state the TMO material 121 of the active element 120 exhibits metallic (i.e. conductive) properties, thus in principle preventing RF signals RF1, RF1 'and associated Electromagnetic (EM) waves from propagating through the TMO material layer 121, i.e. attenuating the RF signals RF1, RF1' from a transmission point of view. According to further exemplary embodiments, however, the degree of attenuation may be controlled by selecting the layer thickness t2 (fig. 4) of the TMO material layer 121. In particular, similar to the electrode layers 122, 123 according to further exemplary embodiments, if the TMO material layer 121 has a sub-skin depth thickness value, at least a portion of the RF signal(s) may propagate through the TMO material layer 121 even in an on-state.
According to a further exemplary embodiment, at least one of the first electrode 122 and the second electrode 123 comprises a thickness t1 smaller than the skin depth of the highest frequency component of the radio frequency signal RF1, RF 1'. This enables the highest frequency component of the radio frequency signal RF1, RF1' to be at least partially transmitted (i.e. propagated) through the at least one active element 120.
According to a further exemplary embodiment, at least one of the first electrode 122 and the second electrode 123 comprises a thickness t1, the thickness t1 being less than 1 micrometer (μm), preferably less than 500 nanometers (nm).
According to further exemplary embodiments, the third layer 121 comprises a thickness t2 that is greater than the skin depth of at least one frequency component of the radio frequency signal, which thickness t2 is in some embodiments greater than 300% of the skin depth, such as greater than 500% of the skin depth.
According to a further exemplary embodiment, referring to fig. 1, the apparatus 100 comprises at least one control device 130, the at least one control device 130 being configured to provide at least one control voltage CV to the at least one active element 120, whereby the dielectric properties or electrical properties of the TMO material 121 may be influenced, as exemplarily explained above. Thus enabling control of the degree of attenuation or propagation of the radio frequency signal(s) RF1, RF 1'.
According to a further exemplary embodiment, the at least one control device 130 is configured to provide at least temporarily to the at least one control voltage CV a) a plurality of discrete voltage values, or b) a continuous voltage value.
According to further exemplary embodiments, providing a plurality of (e.g., two) different discrete voltage values may be used to turn on and off at least one active element 120, i.e., to switch at least one active element 120 between its conductive state of TMO material 121 and its dielectric state of TMO material 121.
According to a further exemplary embodiment, providing the active elements 120 with a continuous voltage value may be used to continuously change at least one active element 120 between its conductive state of the TMO material 121 and its dielectric state of the TMO material 121, thus for example affecting the continuous degree of change of attenuation.
Fig. 6 schematically depicts a simplified side view of a device 100d according to a further exemplary embodiment. The device 100d comprises a plurality of active elements, two of which are exemplarily depicted by fig. 6 and denoted with reference numerals 120_1, 120_2.
According to further exemplary embodiments, a plurality of active elements 120_1, 120_2, may be provided in the waveguide 110, wherein at least two active elements may be arranged adjacent to each other, see fig. 6.
According to further exemplary embodiments, each of the plurality of active elements 120_1, 120_2, may be controlled by a separate control voltage cv_1, cv_2, which may be provided, for example, by the control device 130 (fig. 1).
According to further exemplary embodiments (not shown), each of the plurality of active elements 120_1, 120_2, may be controlled with the same (i.e. common) control voltage, which may also be provided by the control device 130 (fig. 1).
According to a further exemplary embodiment, referring to the perspective view of fig. 7, the apparatus 100e comprises at least one (currently exemplary comprising two) impedance transformers 140_1, 140_2.
According to a further exemplary embodiment, the at least one impedance transformer is arranged adjacent to the at least one active element. As exemplarily depicted by fig. 7, both impedance transformers 140_1, 140_2 are arranged adjacent to the at least one active element 120, thus for example achieving an impedance transformation, in particular an impedance matching, from both sides of the active element 120.
As an example, at least one impedance transformer 140_1, 140_2 may be used to perform impedance matching between the waveguide 110 (fig. 1) (or each segment 110_1, 110_2 of the waveguide) and at least one active element 120. Particularly in case the at least one active element 120 is in an off-state, whereby reflections of the RF signal RF1 at the interface between the waveguide 110, 110_1 and the at least one active element 120 can be avoided or at least reduced.
According to a further exemplary embodiment, the apparatus 100e of fig. 7 may be regarded as an attenuator for an RF signal RF1 propagating within a waveguide 110, wherein the waveguide has a first waveguide segment 110_1 followed by a first impedance transformer 140_1, at least one active element 120, a second impedance transformer 140_2 and a second waveguide segment 110_2. The attenuation of the RF signal RF1 is controllable by the control voltage CV, wherein the RF signal RF1' represents the attenuated RF signal.
According to a further exemplary embodiment, the signal transmission through the waveguide segments 110_1, 110_2 may be roughly described as being achieved by different dielectric properties (i.e. different relative dielectric constants) of the core 112 and the cladding, the core 112 and the cladding creating a kind of mirror reflecting the RF signal RF1 into the core 112 for a specific frequency (in particular total reflection). This also applies to the further exemplary waveguides described above with reference to fig. 1 to 6.
According to a further exemplary embodiment, if a control voltage CV is not applied to the active element 120, which corresponds to the off-state of the active element 120, the active element 120 or its active (i.e. TMO) region 121 appears as a dielectric, e.g. has a voltage represented by ε r OFF Given a dielectric constant, which is generally substantially different from the complex dielectric constant of the waveguides 110_1, 110_2, the complex dielectric constant is expressed as ε r PMF . These different dielectric constants may cause the characteristic impedance of the waveguide
And the characteristic impedance of the active region +.>
According to further exemplary embodiments, impedance transformers 140_1, 140_2 having an electrical length of a quarter wavelength at the operating frequency (i.e. the (center) frequency of the RF signal(s) RF1, RF 1') may be provided, the characteristic impedance Zmatch of which may be characterized, for example, by:
According to further exemplary embodiments, the at least one impedance transformer 140_1, 140_2 may comprise a segment of a waveguide having a predetermined length. In other words, the at least one impedance transformer 140_1, 140_2 may be formed by segments of a waveguide of a predetermined length.
According to a further exemplary embodiment, the at least one impedance transformer is provided, for example based on [ equation 1], such that in the off-state of the at least one active element 120, there is (at least substantially) no undesired reflection at the waveguide/active element interface and propagation of the RF signal between the input and the output is not hindered.
According to further exemplary embodiments, the situation may change once a non-zero control voltage CV is applied to at least one active element 120 or TMO material 121 thereof, respectively. The layer 121 comprising the transition metal oxide now becomes conductive (on-state), in particular highly conductive by indirect contact with a conductive electrode ("bias pad"), which according to a further exemplary embodiment is a sub-skin depth conductor.
According to a further exemplary embodiment, the composite electrical thickness of the at least one active element 120 or the TMO material (layer) 121 thereof may now be significantly increased, for example in the on-state (compared to the off-state), thus resulting in a significant reflection of the RF signals RF1, RF1' at the boundary or interface between the waveguide 110, 110_1, 110_2 and the at least one active element 120.
According to a further exemplary embodiment, assuming that the RF signal RF1 has been provided to at least one active element on the "input" side of the at least one active element, this may result in a significantly attenuated RF signal RF1' at the "output" of the apparatus 100e (fig. 7), i.e. on the output side of the at least one active element 120.
According to a further exemplary embodiment, the device may exhibit reciprocity, i.e. may behave (preferably at least substantially) the same in terms of the direction of signal transmission. In other words, according to further exemplary embodiments, the input signals may be provided individually at either side of the device or waveguide.
According to further exemplary embodiments, the composite electrical thickness of the at least one active element 120 or its active (e.g., TMO) region 121 may be, for example, in the range of several skin depths of the frequency of the RF signal(s), such that the RF signal RF' at the output may be (particularly completely) cancelled.
According to further exemplary embodiments, the composite electrical thickness of the at least one active element 120 may depend on the physical thickness t2 (fig. 4) of the transition metal oxide layer 121, and may also depend on the mode of operation of the at least one active element 120.
According to a further exemplary embodiment, the two modes of operation may be distinguished:
according to an exemplary first mode, the active layer thickness in the on state is several skin depths thick;
according to an exemplary second mode, the active layer thickness in the on state is sub-skin depth thick.
According to a further exemplary embodiment, in the first mode, the device may be operable, for example, by applying a continuous DC (direct current) control voltage CV (i.e. a control voltage that may vary from 0V (volts) to a maximum value Vmax, vmax > 0V), wherein, for example, the conductivity and thus the skin depth of the transition metal oxide layer 121 may be a function of the voltage value of the applied control voltage CV. This (exemplary first) mode of operation may also be referred to as an "analog waveguide or transmission line attenuator".
According to a further exemplary embodiment, in the second mode, even if the highest allowed control voltage (value Vmax) is applied to at least one active element 120 or TMO material (layer) 121 thereof, one active area or TMO layer may not be sufficient to completely cancel the input RF signal. Thus, in order to provide complete controllability of the amplitude of the output RF signal RF1', according to further exemplary embodiments, several TMO material layers may be provided, for example in the form of a plurality of (preferably adjacent) active elements 120', see for example a simplified perspective view of the device 100f of fig. 8.
In other words, according to further exemplary embodiments, a plurality of active elements 120' of the active elements 120_1, 120_2, 120—n may be provided in a waveguide, wherein at least two active elements may be arranged adjacent to each other.
According to further exemplary embodiments, a plurality of active elements 120' may be arranged in series along one axis or longitudinal axis LA (fig. 1) of the waveguide, wherein preferably adjacent active elements 120_1, 120_2 share one common electrode. As an example, the second electrode 123_1 of the first active element 120_1 may also form the first (common) electrode CE of the second active element 120_2 disposed adjacent to the first active element 120_1. In fig. 8, the first electrode of the first active element 120_1 is denoted by reference numeral 122_1, and the TMO layer of the first active element 120_1 is denoted by reference numeral 121_1.
As exemplarily depicted in fig. 8, n active elements 120' may be provided, wherein n >2 (in particular n > 10) is possible according to further embodiments.
According to a further exemplary embodiment, n active elements may be provided with respective independent control voltages CV (not shown).
According to a further exemplary embodiment, the n active elements may be commonly supplied with a common control voltage CV (not shown).
According to a further exemplary embodiment, at least one of the n active elements may be provided with a control voltage CV (see also fig. 1) according to at least one of the following aspects:
(a) Gradual (continuous control voltages, e.g., dc bias), for example, may produce zoned analog attenuation; or alternatively
(b) The control voltage CV may be made to have, for example, two states, e.g., b 1) off (e.g., 0V) and b 2) on (e.g., vmax), e.g., to switch the respective active element(s) on or off, e.g., to produce a "digitally controlled" decay-a decay controlled by a discrete decay value; or alternatively
(c) The combination of (a) and (b) produces, for example, a coarse "digital" attenuation setting, aided by an "analog" fine tuning of the attenuation.
According to further exemplary embodiments, and in particular irrespective of the exemplary mode of operation, the number n of active elements may be varied, for example depending on the desired attenuation level for a particular application field.
According to further exemplary embodiments, further degrees of freedom for the apparatus according to embodiments are provided by the thickness (and thus the attenuation granularity) of the active (i.e. TMO) region 121, the conductivity of the corresponding active region 121, and the operating frequency (i.e. the operating frequency of the RF signals RF1, RF 1').
For example, according to further exemplary embodiments, using equation 2 described below, if the composite conductivity of active region 121 in the on state at the control voltage CV of Vmax is σ=10 7 S/m (west per meter), the thickness t2 (fig. 4) of the active region 121 is about 500nm, and the operating frequency f0 is 100GHz, the skin depth is 500nm.
Wherein mu 0 Is the permeability of free space, and wherein mu r Is the relative permeability of active region 121 in the on state. Skin depth is defined as the thickness of the conductor at a value of about 37% (1/e, e being the euler constant) where the signal is at the surface of the conductor. Thus, in this example, t 2 A single active region thickness of =500 nm can produce a signal that is-20 log (0.37) =8.6 dB attenuated compared to its input. Increasing the number of stages (i.e., n > 1, see fig. 8) according to further exemplary embodiments may increase the overall level of attenuation of the RF signal(s) RF 1. For example, according to further exemplary embodiments, two stages 120_1, 120_2 (fig. 8) can produce an attenuation level of-20 log (0.37×0.37) =17.2 dB, three stages (n=3) can produce an attenuation level of-20 log (0.37×0.37) =25.9 dB, and so on.
According to further exemplary embodiments, in some cases, aspect (a) as described above may also be referred to as an "analog sub-skin depth waveguide or transmission line attenuator", aspect (b) may also be referred to as a "digital sub-skin depth waveguide or transmission line attenuator", and aspect (c) may also be referred to as an "analog-digital sub-skin depth waveguide or transmission line attenuator".
According to further exemplary embodiments, the plurality of active elements 120' may be provided in a length segment (not shown) of the waveguide, which length segment corresponds to 20% or less, preferably to 10% or less, more preferably to 5% or less, more preferably even less than 1% of the total length of the waveguide. In other words, the region of the waveguide comprising one or more active elements according to embodiments may form a relatively small part of the total length of the waveguide compared to the total length of the waveguide, which part may be for example a few meters or for example at most 50m.
According to further exemplary embodiments, regions of the waveguide comprising one or more active elements according to embodiments may not be adjacent, i.e. may be separated by waveguide segments without active elements.
According to further exemplary embodiments, the at least one active element 120 or the plurality of active elements 120' may be arranged, in particular concentrated, at the first and/or second axial end of the waveguide.
According to a further exemplary embodiment, referring to fig. 9, the apparatus 100g may comprise a coupler 150, wherein at least one active element 120_1, 120_2 is connected to at least one port of the coupler 150.
Currently, at least a first active element 120_1 or a first group of active elements is connected to a first port 151 of the coupler 150, and at least a second active element 120_2 or a second group of active elements is connected to a second port 152 of the coupler 150.
According to further exemplary embodiments, at least one of the further ports 153, 154 of the coupler 150 may be used, for example, as an input port and/or an output port for the radio frequency signal RF1 (see fig. 1).
According to further exemplary embodiments, each of the active elements 120_1, 120_2 may be provided with a respective control voltage cv_1, cv_2.
According to further exemplary embodiments, the active elements 120_1, 120_2 may alternatively be provided with a common control voltage (not shown) that supports or facilitates a symmetrical biasing of the active elements 120_1, 120_2, which may be preferred for some reflective configurations.
The configuration 100g of fig. 9 enables reflection-type attenuation of RF signals, whereas the configurations of fig. 1-8 may be regarded as transmission-type attenuators according to further exemplary embodiments.
According to a further exemplary embodiment, coupler 150 (fig. 9) may be a 3-dB hybrid coupler that splits an input signal (e.g., provided at port 154) into two equal-amplitude signals whose phases are in quadrature in the coupling and direct arms. . Coupler 150 may comprise waveguide segments s1, s2, s3, s4, s5, s6, s7, s8, wherein preferably segments s1, s3, s4, s6, s7, s8 have a characteristic impedance ZPMF, and wherein segments s2, s5 have a characteristic impedance
If the active elements 120_1, 120_2, which can be considered as reflective loads for the coupler 150, are identical, the scattering (S) parameters for this structure are: s is S 11 =0 and S 21 =jΓ [ equation 3 ]]Wherein Γ characterizes the reflection coefficient at the load 120_1, 120_2. As can be seen from equation 3, the "reflective" attenuator of fig. 9 is at the input (S 11 =0), in particular irrespective of the control voltage(s) cv_1, cv_2 applied to the active region(s) 121 of the loads 120_1, 120_2.
According to further exemplary embodiments, the device 100g may reflect the input RF signal from its reflective loads 120_1, 120_2 particularly significantly for the case when the active region(s) are turned on (i.e., have a conductive state).
According to further exemplary embodiments, similar to the exemplary embodiments described above with "transmission lines" or waveguide attenuators, see e.g. fig. 7, the exact amount of reflected signal may depend on the physical thickness t2 (fig. 4) of the transition metal oxide layer 121 of the loads 120_1, 120_2. This exemplary case corresponds to the case where the device 100g (fig. 9) is in a low loss state.
According to further exemplary embodiments, the conductivity of the active region 121 of the load 120_1, 120_may be reduced by, for example, reducing the control voltages cv_1, cv_2. The resistance at the active region 121 becomes equal to the resistance Z of the waveguide PMF When (or the respective characteristic impedances), the entire RF signal may be absorbed and dissipated as heat in the resistors formed using the active regions 121 of the loads 120_1, 120_2.
According to further exemplary embodiments, a resistor (not shown) may be added at the coupler and through the port. The resistance of the resistor may be selected as Z, for example PMF -Z TMO_ON . In this case, once the TMO layers are fully activated, they represent the resistance Z PMF_ON This resistance, together with the termination resistor, can provide for high signal attenuation.
According to further exemplary embodiments, it may be beneficial for the active region 121 to be at least a few skin depths thick in order to ensure low loss performance, and in order to have an incident signal that is totally reflected. This may be achieved, for example, by providing a plurality of active elements (e.g., similar to element 120' of fig. 8) as loads 120_1, 120_2 instead of a single active element. In other words, in the case of the conductive state of the TMO layer, a set of multiple active elements 120 may be connected to each port 151, 152 of the coupler 150 to increase the reflective characteristics.
Further exemplary embodiments relate to a method of using an apparatus according to an embodiment, the method comprising at least one of the following steps: a) Processing radio frequency signals RF1, RF1'; b) Influencing the radio frequency signal RF1, in particular a radio frequency signal propagating in a waveguide; c) Attenuating the radio frequency signal RF1; d) Reflecting the radio frequency signal RF1; e) Selecting one or more modes of the radio frequency signal; f) Modulating the radio frequency signal.
According to further exemplary embodiments, the apparatus according to embodiments may be used to process RF signals RF1, RF1' in the GHz range, up to 100GHz or higher (i.e. even in the THz range).
Claims (20)
1. An electronic device, comprising:
a waveguide for radio frequency signals, wherein the waveguide comprises or is at least one polymer fiber; and
at least one active element, wherein a plurality of active elements are provided in the waveguide, the at least one active element comprising a transition metal oxide material and two electrodes for applying a control voltage to the transition metal oxide material, wherein the waveguide comprises or is at least one polymer fiber, wherein the at least one active element is at least partially disposed within or at the waveguide.
2. The electronic device of claim 1, wherein the at least one active element is configured to change between a dielectric state in which the at least one active element is non-conductive and a conductive state in which the at least one active element is conductive, depending on the control voltage.
3. The electronic device according to any of claims 1-2, wherein the at least one active element is arranged at least partially within a) a core of the waveguide, and/or b) a cladding of the waveguide.
4. The electronic device of any of claims 1-2, wherein the waveguide comprises at least a circular cross-section in cross-section.
5. The electronic device of any of claims 1-2, wherein the waveguide comprises at least a non-circular cross-section in cross-section.
6. The electronic device of claim 5, wherein the non-circular cross-section comprises an elliptical cross-section or a polygonal cross-section.
7. The electronic device of claim 6, wherein the polygonal cross-section comprises a rectangular cross-section.
8. The electronic device of any one of claims 1-2, wherein the waveguide is a polymer fiber having a core of polymer material and a cladding surrounding the core, wherein the cladding further comprises polymer material.
9. The electronic device of any of claims 1-2, wherein the at least one active element comprises a stack of layers stacked on top of each other along a first axis, wherein the stack comprises a first layer formed from a first electrode of the two electrodes, a second layer formed from a second electrode of the two electrodes, and a third layer formed from the transition metal oxide material, the third layer being disposed between the first layer and the second layer.
10. The electronic device of claim 9, wherein the first axis of the stack extends parallel to a longitudinal axis of the waveguide.
11. The electronic device of claim 9, wherein at least one of the first electrode and the second electrode comprises a thickness less than a skin depth of at least one frequency component of the radio frequency signal.
12. The electronic device of claim 9, wherein the third layer comprises a thickness greater than a skin depth of at least one frequency component of the radio frequency signal.
13. The electronic device of claim 9, wherein at least one of the first electrode and the second electrode comprises a thickness less than 1 micron.
14. The electronic device of claim 13, wherein at least one of the first electrode and the second electrode comprises a thickness less than 500 nanometers.
15. The electronic apparatus according to any of claims 1-2, comprising at least one control device configured to provide at least one control voltage to the at least one active element.
16. The electronic device of claim 15, wherein the at least one control apparatus is configured to provide a) a plurality of discrete voltage values, or b) a continuous voltage value, at least temporarily, to the at least one control voltage.
17. The electronic device of any of claims 1-2, comprising at least one impedance transformer, wherein the at least one impedance transformer is arranged adjacent to the at least one active element.
18. The electronic device of claim 17, wherein the at least one impedance transformer comprises a segment of the waveguide having a predetermined length.
19. A method of using a device comprising a waveguide for radio frequency signals and at least one active element comprising a transition metal oxide material and two electrodes for applying a control voltage to the transition metal oxide material, wherein the waveguide comprises or is at least one polymer fiber, wherein the at least one active element is at least partially disposed within or at the waveguide, the method comprising at least one of the following steps: a) Processing the radio frequency signal; b) Influence the radio frequency signal; c) Attenuating the radio frequency signal; d) Reflecting the radio frequency signal; e) Selecting one or more modes of the radio frequency signal; f) Modulating the radio frequency signal.
20. The method of claim 19, wherein the radio frequency signal in step b) is a radio frequency signal propagating within the waveguide.
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| EP20168129.3A EP3893326A1 (en) | 2020-04-06 | 2020-04-06 | Apparatus comprising a waveguide for radio frequency signals |
| EP20168129.3 | 2020-04-06 |
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| JPH0682863B2 (en) * | 1987-12-02 | 1994-10-19 | 日本電信電話株式会社 | Light emitting diode |
| US6252557B1 (en) * | 1999-09-30 | 2001-06-26 | Lockheed Martin Corporation | Photonics sensor array for wideband reception and processing of electromagnetic signals |
| US8335419B2 (en) * | 2008-11-10 | 2012-12-18 | Schott Corporation | Optical components with variable electro-chromic extra-mural absorption capability |
| US20120104346A1 (en) * | 2010-10-29 | 2012-05-03 | Wei Yi | Semiconductor device for providing heat management |
| EP3355111B1 (en) * | 2013-11-25 | 2023-05-17 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Electro-optical modulator devices |
| US9601820B2 (en) * | 2014-04-09 | 2017-03-21 | Texas Instruments Incorporated | Dielectric waveguide comprised of a core surrounded by a cladding and forming integrated periodical structures |
| WO2017132429A1 (en) * | 2016-01-29 | 2017-08-03 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Frequency-and amplitude-modulated narrow-band infrared emitters |
| US10027005B2 (en) * | 2016-01-29 | 2018-07-17 | Northrop Grumman Systems Corporation | Voltage controlled tunable filter |
| EP3435481A1 (en) * | 2017-07-26 | 2019-01-30 | Nokia Technologies Oy | Composite substrate for radio frequency signals and method of manufacturing a composite substrate |
| CN108879034A (en) * | 2018-06-28 | 2018-11-23 | 中国人民解放军空军工程大学 | A kind of SSPP transmission phase shifter and preparation method thereof loading ferroelectric thin film |
| EP3618117B1 (en) * | 2018-08-30 | 2022-05-11 | Nokia Solutions and Networks Oy | Apparatus comprising a first and second layer of conductive material and methods of manufacturing and operating such apparatus |
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