CN113492341A - Chuck working table - Google Patents
Chuck working table Download PDFInfo
- Publication number
- CN113492341A CN113492341A CN202110332724.6A CN202110332724A CN113492341A CN 113492341 A CN113492341 A CN 113492341A CN 202110332724 A CN202110332724 A CN 202110332724A CN 113492341 A CN113492341 A CN 113492341A
- Authority
- CN
- China
- Prior art keywords
- wafer
- holding surface
- chuck table
- outer periphery
- length
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
- B24B41/068—Table-like supports for panels, sheets or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Abstract
The invention provides a chuck table, which can grind a wafer to a uniform thickness. The chuck table (3) has a holding surface (302) formed with a notch (303) corresponding to an orientation flat (805) of the wafer (80), and is used for grinding as follows: the annular grinding wheel can grind the wafer in an arc-shaped grinding wheel track from the center of the arc-shaped outer periphery of the holding surface to the outer periphery, the chuck workbench is provided with a frame body (31) for accommodating a porous part (30), and the outer periphery of the frame body is connected with a straight line obtained by connecting the outer periphery position of the frame body where the ratio is established in the grinding wheel track passing through one end of the notch part and the outer periphery position of the frame body where the ratio is established in the grinding wheel track passing through the other end of the notch part by using the ratio of the length of the grinding wheel track passing through the arc-shaped outer periphery of the holding surface of the porous part on the holding surface to the length on the upper surface of the frame body.
Description
Technical Field
The present invention relates to a chuck table for holding a wafer having an orientation flat.
Background
A grinding device for grinding a wafer by a ring-shaped grinder performs suction holding on the wafer by a holding surface for transmitting the suction force of a chuck worktable. A conventional chuck table 37 shown in fig. 8 (see, for example, patent document 1) is configured by a porous portion 370 of a disk having an upper surface as an exposed surface as a holding surface 372, and a frame body 373 that exposes the holding surface 372 and accommodates the porous portion 370.
The holding surface 372 is formed in the same shape as the wafer 80 in correspondence with the orientation flat 805 indicating the crystal orientation formed on the wafer 80. That is, the outer periphery of the porous portion 370 is cut flat corresponding to the orientation flat 805, whereas the upper surface of the frame 373 corresponding to the portion where the outer periphery of the porous portion 370 is missing is larger than the upper surfaces of the other portions of the frame 373 because the outer periphery of the frame 373 is circular.
Patent document 1: japanese patent laid-open No. 2012-134275
The upper surface of the conventional chuck table 37 disclosed in patent document 1, that is, the upper surfaces of the holding surface 372 and the frame 373, is ground by the lower surface of the rotating grinding wheel, whereby self-grinding is performed to form the upper surface of the chuck table 37 parallel to the lower surface of the grinding wheel.
When the wafer 80 is sucked and held from the holding surface 372 after grinding and ground by the grinding whetstone, the length of the whetstone trajectory R376 passing through the center of the wafer 80 and the orientation flat 805 of the wafer 80 becomes shorter than the length of the whetstone trajectory R377 not passing through the orientation flat 805, and therefore, in the region of the whetstone trajectory passing through the orientation flat 805, the grinding pressure applied by the grinding whetstone to the wafer 80 to press the wafer 80 toward the holding surface 372 increases to further grind the wafer 80 by the grinding whetstone, and there is a problem that the thickness of the portion corresponding to the orientation flat 805 of the ground wafer 80 becomes thinner than the other portions.
Therefore, there is a problem that the wafer 80 can be ground to a uniform thickness in a chuck table that sucks and holds the wafer 80 when the wafer 80 having the orientation flat 805 is ground by the grinding wheel.
Disclosure of Invention
The present invention for solving the above problems is a chuck table having a holding surface in which a linear notch portion cut out in correspondence with an orientation flat is formed so as to have a shape similar to an upper surface of a wafer having the orientation flat, the upper surface being a surface to be ground, the chuck table being used for grinding as follows: the annular grinding wheel can make the center of the arc-shaped outer periphery of the holding surface consistent with the center of the wafer and make the holding surface consistent with the shape of the wafer through the center of the arc-shaped outer periphery of the holding surface, and grind the wafer in an arc-shaped grinding wheel track from the center of the wafer held on the holding surface to the outer periphery, wherein the chuck worktable comprises: a porous portion having the holding surface; and a frame body which exposes the holding surface and accommodates the porous portion, wherein the frame body is formed in such a manner that the ratio of the length of the grinding stone track on the holding surface to the length on the upper surface of the frame body is uniform.
Further, the present invention for solving the above problems is a chuck table having a holding surface formed with a linear notch portion cut out in correspondence with an orientation flat so as to have a shape similar to an upper surface of a wafer having the orientation flat as a surface to be ground, the chuck table being used for grinding as follows: the annular grinding wheel can make the center of the arc-shaped outer periphery of the holding surface consistent with the center of the wafer and make the holding surface consistent with the shape of the wafer through the center of the arc-shaped outer periphery of the holding surface, and grind the wafer in an arc-shaped grinding wheel track from the center of the wafer held on the holding surface to the outer periphery, wherein the chuck worktable comprises: a porous portion having the holding surface; and a frame body which exposes the holding surface and accommodates the porous portion, wherein the frame body is formed so that a 2 nd ratio of a length of the grinder trajectory on the upper surface of a predetermined wafer held by the holding surface and a length obtained by adding a length on the holding surface which is the upper surface of the chuck table and a length on the upper surface of the frame body is uniform.
The present invention for solving the above problems is a chuck table having a holding surface in which a linear notch portion cut out in correspondence with an orientation flat is formed so as to have a shape similar to an upper surface of a wafer having the orientation flat, the upper surface being a surface to be ground, the chuck table being used for grinding as follows: the annular grinding wheel can make the center of the arc-shaped outer periphery of the holding surface consistent with the center of the wafer and make the holding surface consistent with the shape of the wafer through the center of the arc-shaped outer periphery of the holding surface, and grind the wafer in an arc-shaped grinding wheel track from the center of the wafer held on the holding surface to the outer periphery, wherein the chuck worktable comprises: a porous portion having the holding surface; and a frame body which exposes the holding surface and accommodates the porous portion, wherein a straight line connecting an outer peripheral position of the frame body where the ratio is established in the grinder trajectory passing through one end of the notch portion and an outer peripheral position of the frame body where the ratio is established in the grinder trajectory passing through the other end of the notch portion is defined as a side of the outer periphery of the frame body, using a ratio of a length of the grinder trajectory passing through the arc-shaped outer periphery of the holding surface on the holding surface to a length on the upper surface of the frame body.
A chuck table having a holding surface in which a linear notch portion cut out in correspondence with an orientation flat is formed so as to have a shape similar to an upper surface of a wafer having the orientation flat, the upper surface being a surface to be polished, the chuck table being used for grinding as follows: the annular grinding wheel can make the center of the arc-shaped outer periphery of the holding surface consistent with the center of the wafer and make the holding surface consistent with the shape of the wafer through the center of the arc-shaped outer periphery of the holding surface, and grind the wafer in an arc-shaped grinding wheel track from the center of the wafer held on the holding surface to the outer periphery, wherein the chuck worktable comprises: a porous portion having the holding surface; and a frame body which exposes the holding surface and accommodates the porous portion, wherein a 2 nd ratio of a length of the grinder trajectory on the upper surface of the predetermined wafer held by the holding surface when passing through the arc-shaped outer periphery of the holding surface and a length obtained by adding a length of the grinder trajectory on the holding surface as the upper surface of the chuck table and a length of the grinder trajectory on the upper surface of the frame body is used, and a straight line connecting an outer peripheral position of the frame body where the 2 nd ratio is established in the grinder trajectory at one end of the orientation plane of the predetermined wafer held by the chuck table and an outer peripheral position of the frame body where the 2 nd ratio is established in the grinder trajectory at the other end of the orientation plane of the predetermined wafer held by the chuck table is used as a side of the outer periphery of the frame body.
The holding surface of the chuck table of the present invention has, for example, the same shape and the same size as the upper surface of the wafer, which is a surface to be ground.
The chuck table according to the present invention has a holding surface on which a linear notch portion cut out in correspondence with an orientation flat is formed so as to have a shape (e.g., a shape similar to a shape (e.g., a shape equal to) of an upper surface as a surface to be ground of a wafer having the orientation flat, and is used for grinding as follows: the annular grinding wheel can make the center of the arc-shaped outer periphery of the holding surface consistent with the center of the wafer and make the holding surface consistent with the shape of the wafer through the center of the arc-shaped outer periphery of the holding surface, and grind the wafer in an arc-shaped grinding wheel track from the center of the wafer held on the holding surface to the outer periphery, wherein the chuck worktable comprises: a porous portion having a holding surface; and a frame body which exposes the holding surface and accommodates the porous portion, wherein the frame body is formed so that a ratio of a length of the grinder track on the holding surface to a length of the grinder track on an upper surface of the frame body is uniform, so that even in a grinder track area passing through an orientation flat of the wafer held on the holding surface, a grinding pressure applied to the wafer is not increased, and the wafer after grinding can be made uniform in thickness.
Further, the chuck table according to the present invention has a holding surface in which a linear notch portion cut out in correspondence with an orientation flat is formed so as to have a shape similar to an upper surface of a wafer having the orientation flat, the upper surface being a surface to be ground, and the chuck table is used for grinding as follows: the annular grinding wheel can make the center of the arc-shaped outer periphery of the holding surface consistent with the center of the wafer and make the holding surface consistent with the shape of the wafer through the center of the arc-shaped outer periphery of the holding surface, and grind the wafer in an arc-shaped grinding wheel track from the center of the wafer held on the holding surface to the outer periphery, wherein the chuck worktable comprises: a porous portion having a holding surface; and a frame body which exposes the holding surface and accommodates the porous portion, wherein the frame body is formed so that a 2 nd ratio of a length of a grindstone track on the upper surface of a predetermined wafer held by the holding surface and a length obtained by adding a length on the holding surface as the upper surface of the chuck table and a length on the upper surface of the frame body is uniform, whereby a grinding pressure applied to the wafer is not increased even in a grindstone track region passing through an orientation plane of the wafer held by the holding surface, and the ground wafer can be made uniform in thickness.
Further, the chuck table according to the present invention has a holding surface on which a linear notch portion cut out in correspondence with an orientation flat is formed so as to have a shape (e.g., congruent) similar to an upper surface of a wafer having the orientation flat as a surface to be ground, and is used for grinding as follows: the annular grinding wheel can make the center of the arc-shaped outer periphery of the holding surface consistent with the center of the wafer and make the holding surface consistent with the shape of the wafer through the center of the arc-shaped outer periphery of the holding surface, and grind the wafer in an arc-shaped grinding wheel track from the center of the wafer held on the holding surface to the outer periphery, wherein the chuck worktable comprises: a porous portion having a holding surface; and a frame body which exposes the holding surface and accommodates the porous portion, wherein a straight line connecting an outer peripheral position of the frame body which is more than true in the grinder trajectory passing through one end of the notch portion and an outer peripheral position of the frame body which is more than true in the grinder trajectory passing through the other end of the notch portion is used as an outer peripheral edge of the frame body by using a ratio of a length of the grinder trajectory on the holding surface when passing through the arc-shaped outer periphery of the holding surface to a length of the frame body on the upper surface of the frame body, whereby even in a grinder trajectory region passing through an orientation plane of the wafer held on the holding surface, a grinding pressure applied to the wafer is not increased, and the wafer after grinding can be made to have a uniform thickness.
Further, the chuck table according to the present invention has a holding surface in which a linear notch portion cut out in correspondence with an orientation flat is formed so as to have a shape similar to an upper surface of a wafer having the orientation flat, the upper surface being a surface to be ground, and the chuck table is used for grinding as follows: the annular grinding wheel can make the center of the arc-shaped outer periphery of the holding surface consistent with the center of the wafer and make the holding surface consistent with the shape of the wafer through the center of the arc-shaped outer periphery of the holding surface, and grind the wafer in an arc-shaped grinding wheel track from the center of the wafer held on the holding surface to the outer periphery, wherein the chuck worktable comprises: a porous portion having a holding surface; and a frame body which exposes the holding surface and accommodates the porous portion, wherein a 2 nd ratio of a length of a grinder trajectory on the upper surface of the predetermined wafer held by the holding surface when the grinder trajectory passes through the arc-shaped outer periphery of the holding surface to a length obtained by adding a length of the grinder trajectory on the holding surface as the upper surface of the chuck table to a length on the upper surface of the frame body is used, and a straight line connecting an outer peripheral position of the frame body where the 2 nd ratio is established in the grinder trajectory passing through one end of an orientation plane of the predetermined wafer to be held and an outer peripheral position of the frame body where the 2 nd ratio is established in the grinder trajectory passing through the other end of the orientation plane of the predetermined wafer to be held is used as a side of the outer periphery of the frame body, even in the grinding wheel track area passing through the orientation flat of the wafer held on the holding surface, the grinding pressure applied to the wafer is not increased, and the grinded wafer can be uniform in thickness.
Drawings
Fig. 1 is a perspective view showing an example of a grinding apparatus having a chuck table according to embodiment 1.
Fig. 2 is an exploded perspective view showing a chuck table according to embodiment 1.
Fig. 3 is a perspective view showing a chuck table according to embodiment 1.
Fig. 4 is a plan view illustrating a chuck table according to embodiment 1, in which a 2 nd ratio of a length of a grinder trajectory on the upper surface of a wafer to be held on a holding surface when the grinder trajectory passes through an arc-shaped outer periphery of the holding surface to a length obtained by adding the length of the grinder trajectory on the holding surface of the chuck table and the length of the grinder trajectory on the upper surface of a frame is used, and a straight line connecting an outer peripheral position of the frame where a 2 nd ratio is established in the grinder trajectory at one end of an orientation plane of the wafer to be held and an outer peripheral position of the frame where the 2 nd ratio is established in the grinder trajectory at the other end of the orientation plane of the wafer to be held is used as a side of the outer periphery of the frame.
Fig. 5 is a plan view illustrating a chuck table according to embodiment 1 before improvement of the chuck table.
Fig. 6 is a plan view for explaining the outer periphery of the housing of each of the chuck table according to embodiment 1, the chuck table according to embodiment 2, the chuck table according to embodiment 3, and the chuck table according to embodiment 4.
Fig. 7 is an enlarged plan view of a part of fig. 6 for explaining the outer peripheral edge of the housing of each of the chuck table according to embodiment 1, the chuck table according to embodiment 2, the chuck table according to embodiment 3, and the chuck table according to embodiment 4.
Fig. 8 is a plan view illustrating a conventional chuck table for holding a wafer.
Description of the reference symbols
80: a wafer; 801: a front side of the wafer; 802: a ground surface of the wafer; 805: an orientation plane; 1: a grinding device; 10: a base; 12: a column; 150: a first box carrying platform; 151: a 2 nd box carrying platform; 21: a 1 st box; 22: a 2 nd cartridge; 155: a robot; 152: temporarily placing a table; 153: a shooting unit; 154: a loading arm; 157: an unloading arm; 156: a cleaning unit; 17: a grinding feed unit; 16: a grinding unit; 166: grinding the grinding tool; 54: a thickness measuring unit; 3: the chuck table of embodiment 1; 30: a porous portion; 302: a holding surface; 3022: the center of the holding surface; 303: a notch portion; 304: a circular arc-shaped outer periphery; 31: a frame body; 311: a frame base; 3112: a bolt penetrates through the jack; 312: an annular wall; 313: a circular arc-shaped upper surface; 314: the notch part corresponds to the upper surface; 315: a recess; 3154: an attraction groove; 3155: a suction hole; 52: a chuck table rotating unit; 50: a cover; 500: a crumple cover; 38: the chuck table of embodiment 2; 33: the chuck table of embodiment 3; 34: the chuck table according to embodiment 4.
Detailed Description
The grinding apparatus 1 shown in fig. 1 is an apparatus for grinding a wafer 80 held on a chuck table 3 according to embodiment 1 of the present invention by a grinding unit 16. The front side (-Y direction side) on the base 10 of the grinding apparatus 1 is a carrying-in/out area 100, which is an area for carrying in/out the wafer 80 to/from the chuck table 3, and the rear side (+ Y direction side) on the base 10 is a grinding area 101, which is an area for grinding the wafer 80 held on the chuck table 3 by the grinding unit 16.
The processing apparatus of the present invention may be configured to include 2 shafts of the rough grinding means and the finish grinding means as grinding means, and the chuck table 3 holding the wafer 80 may be positioned below each grinding means by a rotating turntable.
In the present embodiment, the wafer 80 shown in fig. 1 is a substantially circular semiconductor wafer formed of a silicon base material or the like, and a plurality of devices are formed on the front surface 801 of the wafer 80 facing downward in fig. 1, and a protective tape, not shown, is bonded and protected. The upper surface 802, which is the back surface facing the upper side of the wafer 80, is a surface 802 to be ground. The wafer 80 may be formed of gallium arsenide, sapphire, gallium nitride, resin, ceramic, silicon carbide, or the like, in addition to silicon.
As shown in fig. 1, in the outer peripheral portion of the wafer 80, an orientation flat 805 as a straight line indicating a mark indicating crystal orientation is formed by cutting a part of the outer periphery flat in parallel with the tangential direction of the outer periphery.
A 1 st cassette stage 150 and a 2 nd cassette stage 151 on which cassettes capable of housing a plurality of wafers 80 in a shelf shape are placed are provided on the front surface side (-Y direction side) of the base 10 of the grinding apparatus 1, a 1 st cassette 21 housing a plurality of wafers 80 before processing in a shelf shape is placed on the 1 st cassette stage 150, and a 2 nd cassette 22 housing a plurality of wafers 80 after processing in a shelf shape is placed on the 2 nd cassette stage 151.
A robot 155 is disposed behind the opening on the + Y direction side of the 1 st cassette 21, and the robot 155 carries the wafer 80 before processing out of the 1 st cassette 21 and carries the wafer 80 after processing into the 2 nd cassette 22. A placing table 152 is provided at a position adjacent to the robot 155, the wafer 80 placed on the placing table 152 before grinding is photographed by a photographing unit 153 shown in fig. 1, and the position of the orientation flat 805 and the center position of the wafer 80 are recognized by a control unit, not shown, of the grinding apparatus 1 based on the photographed image.
A loading arm 154 that rotates while holding the wafer 80 is disposed adjacent to the temporary placement table 152. The loading arm 154 holds the wafer 80 held in the position where the orientation flat 805 is held by the temporary placement stage 152, and conveys the wafer to the chuck table 3 positioned nearby. An unloading arm 157 that rotates while holding the processed wafer 80 is provided near the loading arm 154. A single-wafer cleaning unit 156 for cleaning the processed wafer 80 conveyed by the unloading arm 157 is disposed in a position close to the unloading arm 157. The wafer 80 cleaned and dried by the cleaning unit 156 is carried into the 2 nd cassette 22 by the robot 155.
A post 12 is provided upright on the rear side (+ Y direction side) of the grinding region 101, and a grinding feed unit 17 for grinding and feeding the grinding unit 16 and the chuck table 3 in the Z-axis direction (vertical direction) perpendicular to the holding surface 302 is disposed on the front surface on the-Y direction side of the post 12. The grinding feed unit 17 has: a ball screw 170 having an axial center in the Z-axis direction; a pair of guide rails 171 arranged in parallel with the ball screw 170; a motor 172 coupled to an upper end of the ball screw 170 to rotate the ball screw 170; a lift plate 173 having a nut screwed to the ball screw 170 and side portions slidably contacting the guide rails 171; and a holder 174 coupled to the elevating plate 173 to hold the grinding unit 16, wherein when the ball screw 170 is rotated by the motor 172, the elevating plate 173 is guided by the guide rail 171 to reciprocate in the Z-axis direction, and the grinding unit 16 held by the holder 174 is ground and fed in the Z-axis direction.
The grinding unit 16 that grinds the wafer 80 held on the chuck table 3 includes: a rotation shaft 160 having a Z-axis direction as an axial direction; a housing 161 rotatably supporting the rotary shaft 160; a motor 162 that rotationally drives the rotational shaft 160; an annular mounting base 163 connected to the lower end of the rotating shaft 160; and a grinding wheel 164 detachably attached to the lower surface of the mounting base 163.
The grinding wheel 164 has: a grinding wheel base 165; and a plurality of grinding tools 166 having a substantially rectangular parallelepiped shape and annularly arranged on the bottom surface of the grinding wheel base 165. The grinding wheel 166 is formed by fixing grinding abrasive grains or the like with a predetermined binder or the like, for example. In the present embodiment, the grinding wheel 164 is a grinding wheel arranged in segments with a predetermined gap between the grinding stones 166, but may be a grinding wheel arranged in series with grinding stones as a single ring-shaped wheel.
Inside the rotary shaft 160, a not-shown flow path serving as a passage for the grinding fluid is formed to penetrate in the axial direction (Z-axis direction) of the rotary shaft 160. The flow path is opened through the mounting seat 163 on the bottom surface of the grinding wheel base 165 so as to be able to discharge the grinding fluid toward the grinding wheel 166.
A thickness measuring unit 54 for measuring the thickness of the wafer 80 in contact during grinding is provided, for example, at a position near the grinding wheel 164 lowered to a height position at which the wafer 80 is ground.
The grinding apparatus 1 has a chuck table 3 of the present invention. Hereinafter, the chuck table 3 is referred to as the chuck table 3 of embodiment 1. Next, the structure of the chuck table 3 shown in fig. 1 used for grinding the wafer 80 will be described with reference to the exploded perspective view of fig. 2.
The chuck table 3 includes a plate-shaped porous portion 30 and a frame 31 that exposes a holding surface 302 of the porous portion 30 and accommodates the porous portion 30.
The porous portion 30 is formed of, for example, porous ceramic, porous metal, porous polytetrafluoroethylene, porous carbon, or the like, and has a shape obtained by linearly partially cutting the outer peripheral portion of a circular porous plate in parallel with the tangential direction of the outer periphery. The upper surface of the porous portion 30, i.e., the exposed surface exposed from the frame 31, is a holding surface 302, and the holding surface 302 is formed with a notch 303 cut out corresponding to the orientation flat 805 so as to have a shape similar to the ground surface 802 of the wafer 80 having the orientation flat 805, i.e., so as to have a shape similar to the shape of the wafer 80 and slightly smaller (or slightly larger) than the wafer 80. Alternatively, for example, the upper surface of the porous portion 30, i.e., the exposed surface exposed from the frame 31 may be the holding surface 302, and the holding surface 302 may be a notch portion 303 cut out in correspondence with the orientation flat 805 in a shape similar to the ground surface 802 of the wafer 80 having the orientation flat 805, particularly, in such a manner as to have the same shape and the same size, i.e., the same size.
The outer periphery of the holding surface 302 is formed by an arc-shaped outer periphery 304 and a linear notch 303. Further, by performing self-grinding, the holding surface 302 becomes an extremely gentle conical slope surface to the extent that it cannot be visually determined with the center of the holding surface 302 as a vertex.
The center 3022 of the holding surface 302 is a point (center) on the holding surface 302 that is equidistant from the circular arc-shaped outer periphery 304 among the outer peripheries of the holding surface 302. That is, the center 3022 of the holding surface 302 is the center of the circle when the holding surface 302 is a perfect circle without the notch 303 formed in the holding surface 302.
The frame 31 is made of, for example, a stainless alloy, an aluminum alloy, a titanium alloy, or the like, or ceramics, and has a frame base 311 having a circular outer shape in a plan view, and an annular wall 312 erected at a predetermined height in a region on the outer periphery side of the upper surface of the frame base 311. The upper surface of the annular wall 312 is an upper surface of the frame 31.
The inner region of the annular wall 312 serves as a recess 315 for accommodating the porous portion 30. Further, the porous portion 30 can be fitted into the recess 315.
A plurality of (for example, 8) bolt insertion holes 3112 are formed through the frame base 311 in the thickness direction (Z-axis direction) at regular intervals in the circumferential direction.
The annular wall 312 of the frame 31 is formed thicker at a portion corresponding to the notch 303 of the porous portion 30 than at other portions. The upper surface of the portion of the frame 31 corresponding to the notch 303 is provided with a step by partially cutting the annular wall 312, and the frame has a notch corresponding upper surface 314 and a step surface 316, the notch corresponding upper surface 314 is at the same height as the arc-shaped upper surface 313 corresponding to the arc-shaped outer periphery of the frame 31, and the step surface 316 is lower by one step than the notch corresponding upper surface 314.
As shown in fig. 2, 1 circular suction groove 3154 formed around the center of the frame base 311 and a suction hole 3155 overlapping the center of the frame base 311 are formed in the bottom surface of the recess 315 of the frame 31 (the upper surface of the frame base 311). The suction grooves formed in the recess 315 of the housing 31 are not limited to the present embodiment, and a coupling groove may be formed to extend radially from a plurality of annular suction grooves 3154 concentric with the center of the bottom surface of the recess 315 so as to couple the suction grooves 3154 evenly in the circumferential direction.
In a state where the support portion 30 shown in fig. 2 is fitted into the recess 315 of the frame body 31 and the two members are bonded together with an adhesive or the like, not shown, to form the chuck table 3 shown in fig. 1 and 3, a screw hole formed in the upper surface of the table base, not shown, positioned in the base 10 of the grinding apparatus 1 shown in fig. 1 is overlapped with the bolt insertion hole 3112, and the chuck table 3 is fastened by screwing a fixing bolt passed through the bolt insertion hole 3112 into the screw hole of the table base, thereby being arranged in the grinding apparatus 1.
As shown in fig. 1, a chuck table rotating unit 52 including a spindle, a motor, and the like is connected to the chuck table 3 below the table base, and the chuck table rotating unit 52 is rotatable about a rotation axis in the Z-axis direction.
The chuck table 3 can adjust the inclination of the holding surface 302 with respect to the lower surface of the grinding wheel 166 by, for example, an inclination adjusting means not shown. For example, 2 or more tilt adjusting units are provided at equal intervals in the circumferential direction on the bottom surface of the table base. That is, for example, 2 tilt adjusting means and support columns not shown for fixing the table base are arranged at intervals of 120 degrees in the circumferential direction. The 2 inclination adjusting units are, for example, electric cylinders, air cylinders, and the like.
In the grinding apparatus 1, the chuck table 3 is surrounded by the cover 50, and is movable back and forth in the Y-axis direction on the base 10 by a table moving means, not shown, disposed below the cover 50 and the bellows cover 500 coupled to the cover 50. The table moving means, not shown, is a ball screw mechanism or the like that linearly moves the electric slider in the Y-axis direction.
In the grinding apparatus 1 shown in fig. 1, when grinding is performed in a state where the wafer 80 is sucked and held by the chuck table 3, the chuck table 3 sucks and holds the wafer 80 in a state where the notch 303 formed in the holding surface 302 is aligned with the orientation flat 805 of the wafer 80 and the center of the wafer 80 coincides with the center 3022 of the holding surface 302 (the center 3022 of the arc-shaped outer periphery 304 of the holding surface 302). Further, the inclination of the chuck table 3 is adjusted by an inclination adjusting means, not shown, so that the holding surface 302, which has been made into a very gentle conical inclined surface by self-grinding, becomes parallel to the grinding surface, which is the lower surface of the grinding stone 166, and the surface to be ground 802 of the wafer 80 sucked and held along the holding surface 302, which is a conical inclined surface, becomes parallel to the grinding surface of the grinding stone 166. Further, the not-shown table moving means moves the chuck table 3 in the + Y direction, and the chuck table 3 holding the wafer 80 horizontally shifts the rotation center of the grinding wheel 164 of the grinding unit 16 by a predetermined distance from the center 3022 of the arc-shaped outer periphery 304 of the holding surface 302, that is, the rotation center of the wafer 80, so that the wafer 80 can be positioned so that the grinder trajectory R1 of the rotating grinding grinder 166 can pass through the rotation center of the rotating chuck table 3 as shown in fig. 4. Then, the holding surface 302 is made to conform to the shape of the wafer 80, and the wafer 80 is ground along an arc-shaped grinding wheel trajectory R1 or the like extending from the center to the outer periphery of the wafer 80 held on the holding surface 302. In the example shown in fig. 4, the shape of the holding surface 302 is similar to the surface 802 to be ground of the wafer 80, and the holding surface 302 has a size slightly smaller than the surface 802 to be ground, but the holding surface 302 may have the same shape and size as the surface 802 to be ground of the wafer 80, that is, may have the same size.
In the present embodiment, for example, a whetstone locus of the inner edge on the inner peripheral side of the grinding whetstone 166 shown in fig. 1 is set to a whetstone locus R1 shown in fig. 4.
In the chuck table 3 shown in fig. 3 and 4 of embodiment 1, the length of the grindstone trajectory R1 of the grinding grindstone 166 on the holding surface 302 when passing through the arc-shaped outer periphery 304 of the holding surface 302 shown in fig. 4 is set to a length L1. The length of the grindstone trajectory R1 on the arc-shaped upper surface 313 of the frame 31 is set to a length L2. The length of the grinder trajectory R1 on the ground surface 802, which is the upper surface of the wafer 80 indicated by the broken line to be held by the holding surface 302, is set to a length Lw 1. Then, using the 2 nd ratio of the length Lw1 to the length (L1+ L2) obtained by adding the length L1 and the length L2, the length Lw 1: the thickness of the portion of the annular wall 312 of the frame 31 of the chuck table 3 shown in fig. 3 corresponding to the notch 303 of the porous portion 30, that is, the thickness of the inner peripheral side 3144 and the outer peripheral side 3145 of the upper surface 314 corresponding to the notch of the corresponding portion is set to the length (L1+ L2).
That is, as shown in fig. 4, in the chuck table 3 according to embodiment 1, in a grinder trajectory R2 of an arc shape extending from the center to the outer periphery of the ground surface 802 of the wafer 80 indicated by a broken line to be held by the holding surface 302, in a grinder trajectory R2 of one end 8051 (end on the-X direction side in fig. 4) of the orientation flat 805 of the wafer 80 to be held by the holding surface 302, when the length of the grinder trajectory R2 on the holding surface 302 is set to L3, the length of the grinder trajectory R2 on the upper surface of the frame 31 is set to L4, and the length of the grinder trajectory R2 on the ground surface 802 of the wafer 80 to be held by the holding surface 302 is set to Lw2, at the outer peripheral position 3146 of the frame 31, the length Lw 2: length (L3+ L4) ═ length Lw 1: the relationship of the lengths (L1+ L2) is established, and in the grinder trajectory R3 at the other end 8052 (end on the + X direction side in fig. 4) of the orientation flat 805 of the wafer 80 to be held by the holding surface 302, when the length of the grinder trajectory R3 on the holding surface 302 is set to L5, the length of the grinder trajectory R3 on the upper surface of the frame 31 is set to L6, and the length of the grinder trajectory R3 on the ground surface 802 of the wafer 80 to be held by the holding surface 302 is set to length Lw3, at the outer circumferential position 3147 of the frame 31, the length Lw 3: length (L5+ L6) ═ length Lw 1: the relationship of length (L1+ L2) is established, and a straight line connecting the outer peripheral position 3146 of the frame 31 and the outer peripheral position 3147 of the frame 31 is defined as the outer peripheral side 3145 of the frame 31. For example, the width of the notch portion corresponding to the upper surface 314 in the Y-axis direction gradually becomes shorter from the-X direction side toward the + X direction side. That is, although the inner peripheral side 3144 of the cutout portion corresponding to the upper surface 314 is parallel to the linear cutout portion 303 of the porous portion 30 fitted in the recess 315, the outer peripheral side 3145 is not parallel to the cutout portion 303.
In order to ensure that the grinding pressure applied to the wafer 80 does not increase in the grinder track region passing through the orientation flat 805 of the wafer 80 as compared with other cases, the inventors of the present invention first fabricated a chuck table 395 (i.e., a chuck table 395 as a stage before the improvement of the chuck table 3 of the present invention) as shown in fig. 5: in the chuck table 395, the annular wall 312 of the frame 31 is partially cut out from the upper surface of the portion corresponding to the notch 303 of the porous portion 30 to provide a step, and the chuck table has a notch corresponding upper surface 3958 at the same height as the arc-shaped upper surface 313 corresponding to the arc-shaped outer periphery of the frame 31 and a step surface lower than the notch corresponding upper surface 3958 by one step. In the chuck table 395 in the experimental stage before the improvement, unlike the chuck table 3 of the present invention, the width of the upper surface 3958 corresponding to the notch portion is constant, and the width is constant over the entire circumference of the upper surface of the frame 31. That is, the chuck table 395 in the experimental stage before the improvement of the chuck table 3 of the present invention has the notch portion corresponding upper surface 3958, the area of the notch portion corresponding upper surface 3958 is smaller than the upper surface of the portion of the frame 373 of the chuck table 37 shown in fig. 8 corresponding to the notch portion 375 of the porous portion 370, and the orientation flat 805 is parallel to the inner circumference side and the outer circumference side of the notch portion corresponding upper surface 3958 in the state where the wafer 80 to be held, which is indicated by the broken line, is held. The other structure is the same as the chuck table 3 of the present invention.
In the holding surface 3956 after the self-grinding of the chuck table 395 shown in fig. 5 before the improvement, the height H (see fig. 6) of the holding surface 3956 in the grinding wheel locus region passing through the notch 303 is lower than that in other regions as shown in fig. 6. Fig. 6 is an explanatory view of the chuck table 3, the chuck table 395 before modification, and the chuck table 37 shown in fig. 6 of the present invention, showing a corresponding portion of each frame body with respect to the orientation flat 805 of the wafer 80 in a plan view, and showing the height of each holding surface in a case where each holding surface has been self-ground in a front view. Fig. 6 shows a cross section of the chuck table 395 taken along line b1-b2 shown in fig. 5, and the outer peripheral side of the frame 31 of the chuck table 395 shown in a plan view, which corresponds to the orientation flat 805 of the wafer 80, is indicated by a two-dot chain line. As shown in fig. 6, in the holding surface 372 of the chuck table 37 shown in fig. 8 after self-grinding, the height H of the holding surface 372 in the grinding wheel path region passing through the notch 375 shown in fig. 8 is substantially constant and becomes a flat surface. Fig. 6 shows a cross section of the chuck table 37 shown in fig. 8 taken along line b1-b2, and the outer periphery of the frame 373 of the chuck table 37 shown in a plan view, which corresponds to the orientation flat 805 of the wafer 80, is shown by a broken line.
Therefore, when the wafer 80 held by the holding surface 3956 of the chuck table 395 shown in fig. 5 and 6 after the self-grinding is ground, the portion of the wafer 80 corresponding to the orientation flat 805 is ground in a state lower than the lower surface of the grinding stone 166 shown in fig. 1, and therefore, compared with the case of using the chuck table 37 shown in fig. 8, the thickness of the portion of the wafer 80 corresponding to the orientation flat 805 after the grinding can be reduced by an amount smaller than that of the other portions. That is, the flatness of the wafer 80 after grinding can be further improved. However, the thickness of the portion of the wafer 80 after grinding corresponding to the orientation flat 805 tends to be thinner than the other portions.
That is, this is because, for example, as the length of the plurality of grinder traces R90 becomes longer from the-X direction side toward the + X direction side shown in fig. 5 due to the constant width of the notch portion corresponding upper surface 3958, the height H of the holding surface 3956 after the self-grinding of the grinder trace region passing through the notch portion 303 does not sufficiently decrease, and the portion of the holding surface 3956 corresponding to the orientation flat 805 of the wafer 80 becomes flat halfway from the-X direction side toward the + X direction side. This is considered to cause a tendency (tendency to be cut more) that the thickness of the portion of the ground wafer 80 corresponding to the orientation flat 805 is thinner than that of the other portions.
In contrast, in the holding surface 302 after the self-grinding of the chuck table 3 of embodiment 1 shown in fig. 4 and 6, the height H of the holding surface 302 in the grinding wheel locus region passing through the notch 303 is lower than that in other regions as shown in fig. 6. In addition, fig. 6 shows a section taken along line b1-b2 of the chuck table 3 shown in fig. 4. Further, the height H of the holding surface 302 in the grinding wheel trace region passing through the notch 303, that is, the height H of the portion of the holding surface 302 corresponding to the orientation flat 805 of the wafer 80 is uneven in the middle from the-X direction side toward the + X direction side as shown in fig. 6 in a manner comparable to the self-ground holding surface 3956 of the chuck table 395. This is because, in the grinder trajectory R2 of one end 8051 (one end on the-X direction side in fig. 4) of the orientation flat 805 of the predetermined wafer 80 held by the holding surface 302 shown in fig. 4, at the outer peripheral position 3146 of the frame body 31, the 2 nd ratio, that is, the length Lw 1: length (L1+ L2) ═ length Lw 2: the relationship of the lengths (L3+ L4) is established, and in the grindstone trajectory R3 at the other end 8052 (one end on the + X direction side in fig. 4) of the orientation flat 805 of the predetermined wafer 80 held by the holding surface 302, at the outer peripheral position 3145 of the frame 31, the 2 nd ratio, that is, the length Lw 1: length (L1+ L2) ═ length Lw 3: the relationship of length (L5+ L6) is established, and a straight line connecting the outer peripheral position 3146 of the frame 31 and the outer peripheral position 3147 of the frame 31 is defined as the outer peripheral side 3145 of the frame 31. Further, when the wafer 80 held by the holding surface 302 of the self-ground chuck table 3 is ground, the portion of the wafer 80 corresponding to the orientation flat 805 is ground in a state of being lower than the lower surface of the grinding stone 166 shown in fig. 1, and therefore, the thickness of the portion of the wafer 80 corresponding to the orientation flat 805 after grinding can be reduced by an amount smaller than that of the other portions, as compared with the case where the chuck table 37 shown in fig. 8 or the chuck table 395 shown in fig. 5 is used. That is, the flatness of the wafer 80 after grinding can be further improved as compared with the case of using the chuck table 395 or the like.
As described above, the chuck table 3 according to embodiment 1 includes: a porous portion 30 having a holding surface 302; and a frame body 31 which exposes the holding surface 302 and accommodates the porous portion 30, wherein a 2 nd ratio of a length of a grindstone locus passing through the arc-shaped outer periphery 304 of the holding surface 302 on a ground surface 802 which is an upper surface of the predetermined wafer 80 held by the holding surface 302 and a length obtained by adding a length of the grindstone locus on the holding surface 302 which is an upper surface of the chuck table 3 and a length on an upper surface of the frame body 31 is used, and a straight line connecting an outer peripheral position 3146 of the frame body 31 where the 2 nd ratio is established in the grindstone locus passing through one end 8051 of the orientation flat 805 of the predetermined wafer 80 held and an outer peripheral position 3147 of the frame body 31 where the 2 nd ratio is established in the grindstone locus passing through the other end 8052 of the orientation flat 805 of the predetermined wafer 80 held is used as a side 3145 of the outer periphery of the frame body 31, whereby even in a region of the grindstone locus passing through the orientation flat 805, the grinding pressure applied to the wafer 80 is not increased, and the wafer 80 after grinding can be made uniform in thickness.
In the chuck table 3 of the present invention, the radius of the circular arc-shaped outer periphery 304 of the holding surface 302 is set to 74mm, for example. The radius of the arc-shaped outer periphery of the frame body 31 is 84mm, and the difference between the radius of the arc-shaped outer periphery of the frame body 31 and the radius (74mm) of the arc-shaped outer periphery 304 of the holding surface 302 is 10 mm. The radius of the wafer 80 is, for example, 75 mm.
The chuck table of the present invention is not limited to the chuck table 3 of embodiment 1, and may be a chuck table 38 of embodiment 2, a chuck table 33 of embodiment 3, and a chuck table 34 of embodiment 4, which are partially shown in fig. 6 and 7 described below.
Differences between the chuck table 38 according to embodiment 2 and the chuck table 3 according to embodiment 1 will be described below. The configurations other than the differences described below are the same in the chuck table 3 according to embodiment 1 and the chuck table 38 according to embodiment 2. Fig. 6 is an outline 381 of the outer periphery of the upper surface 314 corresponding to the notched portion of the chuck table 38 of embodiment 2, which is a different point from the chuck table 3 of embodiment 1.
The chuck table 38 according to embodiment 2 has a holding surface 302, and the holding surface 302 has a notch 303 cut out in correspondence with the orientation flat 805 so as to be congruent with the surface to be ground of the wafer 80 having the orientation flat 805 shown in fig. 4, and the chuck table 38 is used for the following grinding process: the ring-shaped grinding wheel 166 is capable of grinding the wafer 80 in an arc-shaped wheel path extending from the center of the wafer 80 held by the holding surface 302 (i.e., from the center 3022 of the holding surface 302) to the outer periphery thereof by matching the center 3022 of the arc-shaped outer periphery 304 of the holding surface 302 with the center 3022 of the arc-shaped outer periphery 304 of the holding surface 302 and matching the shape of the holding surface 302 with the shape of the wafer 80, and the chuck table 38 includes: a porous portion 30 having a holding surface 302; and a frame body 31 that exposes the holding surface 302 and accommodates the porous portion 30, wherein the frame body 31 is formed so that a ratio of a length of the grindstone trajectory on the holding surface 302 to a length on an upper surface of the frame body 31 is uniform. More specifically, the chuck table 38 is formed with the frame 31 as follows: the ratio of the length L1 of the grindstone trajectory R1 on the holding surface 302 to the length L2 on the arc-shaped upper surface 313 of the frame body 31 shown in fig. 4, the ratio of the length L31 on the holding surface 302 to the length L32 on the upper surface (notch-corresponding upper surface 314) of the frame body 31 of the grindstone trajectory R32 shown in fig. 6 passing through the linear notch 303, for example, the ratio of the length L33 on the holding surface 302 to the length L34 on the notch-corresponding upper surface 314 of the frame body 31 of the grindstone trajectory R33 shown in fig. 6, for example, are uniform. Namely, the length L1 shown in fig. 4: length L2 shown in fig. 4 is length L31: length L32 — length L33: the relationship of length L34 holds.
The width of the upper surface 314 corresponding to the notch portion of the frame 31 of the chuck table 38 according to embodiment 2 in the Y axis direction gradually becomes shorter from the-X direction side toward the + X direction side. As shown in fig. 6 and 7, the edge 381 of the outer periphery of the upper surface 314 corresponding to the notch portion of the frame 31 of the chuck table 38 is similar to the edge 3145 of the outer periphery of the chuck table 3 according to embodiment 1. In fig. 7, the vicinity of line b2 shown in fig. 6 is enlarged.
Further, when the wafer 80 (for example, the wafer 80 having the surface 802 to be ground which is identical to the holding surface 302) held by the self-ground holding surface 302 is ground with respect to the chuck table 38 of embodiment 2, the portion of the wafer 80 corresponding to the orientation flat 805 is ground in a state lower than the lower surface of the grinding stone 166 shown in fig. 1, substantially as in the case of the chuck table 3 of embodiment 1, and therefore, the thickness of the portion of the wafer 80 corresponding to the orientation flat 805 after grinding can be reduced by an amount smaller than that of the other portions, as compared with the case of using the chuck table 37 shown in fig. 8 or the chuck table 395 shown in fig. 5. That is, the flatness of the wafer 80 after grinding can be further improved as compared with the chuck table 395 and the like.
As described above, in the chuck table 38 according to embodiment 2, the grinding pressure applied to the wafer 80 is not increased even in the grinder path region passing through the orientation flat 805, and the wafer 80 after grinding can be made uniform in thickness.
Differences between the chuck table 33 of embodiment 3 and the chuck table 3 of embodiment 1 will be described below. The configurations other than the differences described below are the same in the chuck table 3 according to embodiment 1 and the chuck table 33 according to embodiment 3. Fig. 6 is an outline 334 of the outer periphery of the upper surface 314 corresponding to the notched portion of the chuck table 33 of embodiment 3, which is a different point from the chuck table 3 of embodiment 1.
The chuck table 33 according to embodiment 3 has a holding surface 302, and the holding surface 302 has a notch 303 cut out in correspondence with the orientation flat 805 so as to have the same shape as the ground surface of the wafer 80 having the orientation flat 805 shown in fig. 4, and the chuck table 33 is used for the following grinding process: the ring-shaped grinding wheel 166 is capable of grinding the wafer 80 in an arc-shaped wheel path extending from the center of the wafer 80 held on the holding surface 302 (i.e., from the center 3022 of the holding surface 302) to the outer periphery thereof by matching the center 3022 of the arc-shaped outer periphery 304 of the holding surface 302 with the center 3022 of the wafer 80 and matching the shape of the holding surface 302 with the wafer 80, and the chuck table 33 includes: a porous portion 30 having a holding surface 302; and a frame body 31 that exposes the holding surface 302 and accommodates the porous portion 30, wherein the frame body 31 is formed so that a 2 nd ratio of a length of a grinding path on a grinding surface 802 of a predetermined wafer 80 (for example, the wafer 80 having the grinding surface 802 and the holding surface 302 in common) held by the holding surface 302 and a length obtained by adding a length on the holding surface 302 as an upper surface of the chuck table 33 and a length on an upper surface of the frame body 31 is uniform.
In the chuck table 33, the 2 nd ratio of the length Lw1 of the grindstone trajectory R1 shown in fig. 4 on the surface 802 to be ground of the predetermined wafer 80 held by the holding surface 302 to the length L1 of the grindstone trajectory R1 of the grinding grindstone 166 on the holding surface 302 when passing through the arc-shaped outer periphery 304 of the holding surface 302 and the length L2 of the grindstone trajectory R1 on the arc-shaped upper surface 313 of the frame 31 (L1+ L2) is the length Lw 1: length (L1+ L2).
For example, the 2 nd ratio of the length Lw4 (not shown in fig. 6) of the grindstone trajectory R35 on the surface 802 to be ground of the predetermined wafer 80 held on the holding surface 302 by the one end 3031 of the linear notch 303 to the length (L38+ L39) obtained by adding the length L38 of the grindstone trajectory R35 on the holding surface 302 and the length L39 on the upper surface of the frame 31 is the length Lw 4: length (L38+ L39) ═ length Lw 1: the relationship of the lengths (L1+ L2) is established, and for example, the 2 nd ratio of the length Lw5 (not shown in fig. 6) of the grindstone trajectory R34 shown in fig. 6 on the ground surface 802 of the predetermined wafer 80 held by the holding surface 302 through the linear notch 303 to the length (L35+ L36) obtained by adding the length L35 of the grindstone trajectory R34 on the holding surface 302 and the length L36 on the upper surface of the frame 31 is the length Lw 5: length (L35+ L36) ═ length Lw 1: the relationship of length (L1+ L2) holds.
The width of the upper surface 314 corresponding to the notch portion of the frame 31 of the chuck table 33 according to embodiment 3 in the Y axis direction gradually becomes shorter from the-X direction side toward the + X direction side. As shown in fig. 6 and 7, the edge 334 of the upper surface 314 corresponding to the notch of the frame 31 of the chuck table 33 is very similar to the edge 3145 of the chuck table 3 of embodiment 1.
When the wafer 80 held on the holding surface 302 after the self-grinding of the chuck table 38 of embodiment 3 is ground, the portion corresponding to the orientation flat 805 of the wafer 80 is ground in a state lower than the lower surface of the grinding stone 166 shown in fig. 1, substantially in the same manner as the case of the chuck table 3 of embodiment 1, and therefore, the thickness of the portion corresponding to the orientation flat 805 of the ground wafer 80 can be reduced by an amount smaller than that of the other portions, as compared with the case of using the chuck table 37 shown in fig. 8 or the chuck table 395 shown in fig. 5. That is, the flatness of the wafer 80 after grinding can be further improved as compared with the chuck table 395 and the like.
As described above, in the chuck table 33 according to embodiment 3, the grinding pressure applied to the wafer 80 is not increased even in the grinder path region passing through the orientation flat 805, and the wafer 80 after grinding can be made uniform in thickness.
Differences between the chuck table 34 according to embodiment 4 and the chuck table 3 according to embodiment 1 will be described below. The configurations other than the differences described below are the same in the chuck table 3 according to embodiment 1 and the chuck table 34 according to embodiment 4. Fig. 6 is an outline 346 of the outer periphery of the upper surface 314 corresponding to the cutout portion of the chuck table 34 of embodiment 4, which is a different point from the chuck table 3 of embodiment 1.
The chuck table 34 according to embodiment 4 has a holding surface 302, and the holding surface 302 has a notch 303 cut out in correspondence with the orientation flat 805 so as to have a shape similar to the ground surface of the wafer 80 having the orientation flat 805 shown in fig. 4, and the chuck table 34 is used for the following grinding process: the ring-shaped grinding stone 166 is configured to grind the wafer 80 in an arc-shaped stone trajectory extending from the center to the outer periphery of the wafer 80 held by the holding surface 302 by matching the center 3022 of the arc-shaped outer periphery 304 of the holding surface 302 with the center of the wafer 80 and matching the shape of the holding surface 302 with the shape of the wafer 80, and the chuck table 34 includes: a porous portion 30 having a holding surface 302; and a frame body 31 that exposes the holding surface 302 and houses the porous portion 30, wherein a straight line connecting an outer peripheral position 3146 of the frame body 31 where a grinding wheel locus passing through one end 3031 of the notch 303 satisfies a ratio of a length of the grinding wheel locus on the holding surface 302 to a length of the upper surface of the frame body 31 when passing through the arc-shaped outer periphery 304 of the holding surface 302 and an outer peripheral position 3147 of the frame body 31 where the ratio satisfies a ratio of the grinding wheel locus passing through the other end 3032 of the notch 303 is used as a side 346 of the outer periphery of the frame body 31.
Specifically, the ratio of the length L1 of the whetstone trajectory R1 of the grinding whetstone 166 when passing through the arc-shaped outer periphery 304 of the holding surface 302 shown in fig. 4 to the length L2 of the whetstone trajectory R1 on the arc-shaped upper surface 313 of the frame 31 is the length L1: the length L2 is set to the thickness of the portion of the porous portion 30 of the annular wall 312 of the frame 31 of the chuck table 3 corresponding to the notch 303 shown in fig. 3, that is, the inner peripheral side 3144 and the outer peripheral side 346 of the notch corresponding upper surface 314 of the corresponding portion.
That is, as shown in fig. 6, in the chuck table 34 according to embodiment 4, in the grindstone trajectory R35 passing through the one end 3031 (the one end on the side of the — X direction in fig. 6) of the linear notch portion 303 of the porous portion 30, the length L38 of the grindstone trajectory R35 on the holding surface 302 at the outer circumferential position 3148 of the frame 31: the length L39 of the grinder trajectory R2 on the upper surface of the frame 31 is equal to the length L1: the relationship of the length L2 is established, and in the grindstone trajectory R38 passing through the other end 3032 (one end on the + X direction side in fig. 6) of the notched portion 303, at the outer circumferential position 3149 of the frame 31, the length L40 of the grindstone trajectory R38 on the holding surface 302: the length L41 of the grinder trajectory R38 on the upper surface of the frame 31 is equal to the length L1: the relationship of the length L2 is established, and a straight line connecting the outer peripheral position 3148 of the housing 31 and the outer peripheral position 3149 of the housing 31 is defined as the side 346 of the outer periphery of the housing 31.
The width of the upper surface 314 of the chuck table 34 corresponding to the notch portion of the frame 31 in the Y axis direction gradually becomes shorter from the-X direction side toward the + X direction side. The edge 346 of the outer periphery of the upper surface 314 corresponding to the notch portion of the frame 31 of the chuck table 34 is similar to the edge 3145 of the outer periphery of the chuck table 3 of embodiment 1, and is very similar to the edge 381 of the outer periphery of the chuck table 38 of embodiment 2.
When the wafer 80 held on the holding surface 302 after the self-grinding of the chuck table 34 of embodiment 4 is ground, the portion of the wafer 80 corresponding to the orientation flat 805 is ground in a state lower than the lower surface of the grinding stone 166 shown in fig. 1, substantially as in the case of the chuck table 3 of embodiment 1, and therefore, the thickness of the portion of the wafer 80 corresponding to the orientation flat 805 after grinding can be reduced by an amount smaller than that of the other portions, as compared with the case of using the chuck table 37 shown in fig. 8 or the chuck table 395 shown in fig. 5. That is, the flatness of the wafer 80 after grinding can be further improved as compared with the chuck table 395 and the like.
As described above, in the chuck table 34 according to embodiment 4, the grinding pressure applied to the wafer 80 is not increased even in the grinder path region passing through the orientation flat 805, and the wafer 80 after grinding can be made uniform in thickness.
The chuck table 3 of the present invention is not limited to the chuck table 3 of embodiment 1, the chuck table 38 of embodiment 2, the chuck table 33 of embodiment 3, and the chuck table 34 of embodiment 4, and may be implemented in various different ways within the scope of the technical idea thereof. The shape and the like of each configuration of the grinding apparatus 1 illustrated in the drawings are not limited thereto, and may be appropriately modified within a range in which the effects of the present invention can be exhibited.
Claims (5)
1. A chuck table having a holding surface in which a linear notch portion cut out in correspondence with an orientation flat is formed so as to have a shape similar to an upper surface of a wafer having the orientation flat, the upper surface being a surface to be polished, the chuck table being used for grinding as follows: the annular grinding whetstone can grind the wafer in an arcuate whetstone track extending from the center of the wafer held on the holding surface to the outer periphery thereof by aligning the center of the arcuate outer periphery of the holding surface with the center of the wafer and aligning the holding surface with the shape of the wafer by aligning the center of the arcuate outer periphery of the holding surface,
the chuck table has:
a porous portion having the holding surface; and
a frame body which exposes the holding surface and accommodates the porous portion,
the frame is formed in such a manner that the ratio of the length of the grinding stone trajectory on the holding surface to the length on the upper surface of the frame is made uniform.
2. A chuck table having a holding surface in which a linear notch portion cut out in correspondence with an orientation flat is formed so as to have a shape similar to an upper surface of a wafer having the orientation flat, the upper surface being a surface to be polished, the chuck table being used for grinding as follows: the annular grinding whetstone can grind the wafer in an arcuate whetstone track extending from the center of the wafer held on the holding surface to the outer periphery thereof by aligning the center of the arcuate outer periphery of the holding surface with the center of the wafer and aligning the holding surface with the shape of the wafer by aligning the center of the arcuate outer periphery of the holding surface,
the chuck table has:
a porous portion having the holding surface; and
a frame body which exposes the holding surface and accommodates the porous portion,
the frame body is formed so that a 2 nd ratio of a length of the grinding wheel locus on the upper surface of the predetermined wafer held by the holding surface and a length obtained by adding a length on the holding surface as the upper surface of the chuck table and a length on the upper surface of the frame body is uniform.
3. A chuck table having a holding surface in which a linear notch portion cut out in correspondence with an orientation flat is formed so as to have a shape similar to an upper surface of a wafer having the orientation flat, the upper surface being a surface to be polished, the chuck table being used for grinding as follows: the annular grinding whetstone can grind the wafer in an arcuate whetstone track extending from the center of the wafer held on the holding surface to the outer periphery thereof by aligning the center of the arcuate outer periphery of the holding surface with the center of the wafer and aligning the holding surface with the shape of the wafer by aligning the center of the arcuate outer periphery of the holding surface,
the chuck table has:
a porous portion having the holding surface; and
a frame body which exposes the holding surface and accommodates the porous portion,
using the ratio of the length of the grinding wheel track on the holding surface to the length on the upper surface of the frame when passing through the arc-shaped outer periphery of the holding surface,
a straight line connecting an outer peripheral position of the frame where the ratio is established in the grinder trajectory passing through one end of the notch portion and an outer peripheral position of the frame where the ratio is established in the grinder trajectory passing through the other end of the notch portion is defined as a side of the outer periphery of the frame.
4. A chuck table having a holding surface in which a linear notch portion cut out in correspondence with an orientation flat is formed so as to have a shape similar to an upper surface of a wafer having the orientation flat, the upper surface being a surface to be polished, the chuck table being used for grinding as follows: the annular grinding whetstone can grind the wafer in an arcuate whetstone track extending from the center of the wafer held on the holding surface to the outer periphery thereof by aligning the center of the arcuate outer periphery of the holding surface with the center of the wafer and aligning the holding surface with the shape of the wafer by aligning the center of the arcuate outer periphery of the holding surface,
the chuck table has:
a porous portion having the holding surface; and
a frame body which exposes the holding surface and accommodates the porous portion,
using a 2 nd ratio of a length of the grinder trajectory on the upper surface of the predetermined wafer held by the holding surface when passing through the arc-shaped outer periphery of the holding surface to a length obtained by adding a length of the grinder trajectory on the holding surface as the upper surface of the chuck table and a length on the upper surface of the frame,
a straight line connecting an outer peripheral position of the frame where the 2 nd ratio is established in the grinder trajectory passing through one end of the orientation flat of the held predetermined wafer and an outer peripheral position of the frame where the 2 nd ratio is established in the grinder trajectory passing through the other end of the orientation flat of the held predetermined wafer is taken as a side of the outer periphery of the frame.
5. The chuck table according to any one of claims 1 to 4,
the holding surface has the same shape and the same size as the upper surface of the wafer as the surface to be ground.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020-067449 | 2020-04-03 | ||
| JP2020067449A JP2021160067A (en) | 2020-04-03 | 2020-04-03 | Chuck table |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113492341A true CN113492341A (en) | 2021-10-12 |
Family
ID=77997498
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110332724.6A Pending CN113492341A (en) | 2020-04-03 | 2021-03-29 | Chuck working table |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2021160067A (en) |
| KR (1) | KR20210124044A (en) |
| CN (1) | CN113492341A (en) |
| TW (1) | TW202139350A (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5875224B2 (en) | 2010-12-21 | 2016-03-02 | 株式会社ディスコ | Grinding equipment |
-
2020
- 2020-04-03 JP JP2020067449A patent/JP2021160067A/en active Pending
-
2021
- 2021-03-23 TW TW110110421A patent/TW202139350A/en unknown
- 2021-03-23 KR KR1020210037224A patent/KR20210124044A/en active Search and Examination
- 2021-03-29 CN CN202110332724.6A patent/CN113492341A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| KR20210124044A (en) | 2021-10-14 |
| JP2021160067A (en) | 2021-10-11 |
| TW202139350A (en) | 2021-10-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI483302B (en) | Wafer grinding method | |
| US10668594B2 (en) | Frame fixing jig | |
| TWI710427B (en) | Grinding wheel and grinding method of workpiece | |
| JP5340832B2 (en) | Mounting flange end face correction method | |
| JP6792408B2 (en) | How to shape the chuck table | |
| JP2021126742A (en) | Cutting blade, flange mechanism and cutting device | |
| KR102539243B1 (en) | Grinding wheel and grinding apparatus | |
| TWI779164B (en) | Grinding device | |
| TW201620028A (en) | Grinding method for workpieces | |
| TW202133254A (en) | Processing method of wafer to stably perform the so-called TAIKO grinding in which a circular concave portion corresponding to a device region and an annular convex portion corresponding to an outer peripheral surplus region are formed on the back surface of a wafer | |
| CN113492341A (en) | Chuck working table | |
| JP2021112781A (en) | Grinding device | |
| JP2008130808A (en) | Grinding method | |
| CN114536131A (en) | Processing device | |
| CN111438580B (en) | Method for processing object to be processed | |
| CN114454013A (en) | Method for grinding workpiece | |
| JP2022080967A (en) | Grinding apparatus | |
| JP6850569B2 (en) | Polishing method | |
| JP2019111634A (en) | Method for grinding work-piece | |
| JP7317441B2 (en) | chamfering machine | |
| JP5512314B2 (en) | Grinding equipment | |
| JP2024031191A (en) | Grinding device | |
| JP2010012565A (en) | Method of grinding wafer | |
| JP2023058925A (en) | Method for manufacturing wafer, and chuck table | |
| JP2024074422A (en) | Method for grinding a workpiece |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |